Dual IGBTMOD™ NF-Series Module CM300DY-24NF

CM300DY-24NF
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD
NF-Series Module
300 Amperes/1200 Volts
T C MEASURED POINT
(BASEPLATE)
A
F
F
W
B E N J
C2E1 E2 C1
G2
E2
E1
G1
G
G
H
L
(4 PLACES)
C
V
K
K
D
K
M NUTS
(3 PLACES)
P P P T THICK
Q Q
U WIDTH
LABEL
S
R
Description:
Powerex IGBTMOD Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected
super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
C2E1
E2
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.98 25.0
G 0.24 6.0
H 0.59 15.0
J 0.81 20.5
K 0.55 14.0
L 0.26 Dia. Dia. 6.5
G2
E2
C1
E1
G1
Dimensions Inches Millimeters
M M6 Metric M6
N 1.18 30.0
P 0.71 18.0
Q 0.28 7.0
R 0.83 21.2
S 0.33 8.5
T 0.02 0.5
U 0.110 2.8
V 0.16 4.0
W 0.85 21.5
Features:
£ Low Drive Power
£ Low V CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ UPS
£ Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM300DY-24NF is a 1200V
(V CES ), 300 Ampere Dual IGBT-
MOD Power Module.
Type Current Rating V CES
Amperes Volts (x 50)
CM 300 24
1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DY-24NF
Dual IGBTMOD NF-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25 °C unless otherwise specified
Ratings Symbol CM300DY-24NF Units
Junction Temperature T j –40 to 150 °C
Storage Temperature T stg –40 to 125 °C
Collector-Emitter Voltage (G-E Short) V CES 1200 Volts
Gate-Emitter Voltage (C-E Short) V GES ±20 Volts
Collector Current*** (DC, T C´ = 111°C) I C 300 Amperes
Peak Collector Current I CM 600* Amperes
Emitter Current** (T C = 25°C) I E 300 Amperes
Peak Emitter Current** I EM 600* Amperes
Maximum Collector Dissipation (T C = 25°C, T j ≤ 150°C) P C 1130 Watts
Mounting Torque, M6 MainTerminal — 40 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V ISO 2500 Volts
Static Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I CES V CE = V CES , V GE = 0V — — 1.0 mA
Gate Leakage Current I GES V GE = V GES , V CE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage V GE(th) I C = 30mA, V CE = 10V 6.0 7.0 8.0 Volts
Collector-Emitter Saturation Voltage V CE(sat) I C = 300A, V GE = 15V, T j = 25°C — 1.8 2.5 Volts
I C = 300A, V GE = 15V, T j = 125°C — 2.0 — Volts
Total Gate Charge Q G V CC = 600V, I C = 300A, V GE = 15V — 2000 — nC
Emitter-Collector Voltage** V EC I E = 300A, V GE = 0V — — 3.2 Volts
Dynamic Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C ies — — 70 nf
Output Capacitance C oes V CE = 10V, V GE = 0V — — 6.0 nf
Reverse Transfer Capacitance C res — — 1.4 nf
Inductive Turn-on Delay Time t d(on) — — 500 ns
Load Rise Time t r V CC = 600V, I C = 300A, — — 120 ns
Switch Turn-off Delay Time t d(off) V GE1 = V GE2 = 15V, R G = 1.0Ω, — — 600 ns
Time Fall Time t f Inductive Load — — 350 ns
Diode Reverse Recovery Time** t rr Switching Operation, — — 250 ns
Diode Reverse Recovery Charge** Q rr I E = 300A — 13 — µC
*Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***T C´ measured point is just under the chips. If this value is used, R th(f-a) should be measured just under the chips.
2

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DY-24NF
Dual IGBTMOD NF-Series Module
300 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T j = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R th(j-c) Q Per IGBT 1/2 Module, T C Reference — — 0.11 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R th(j-c) D Per FWDi 1/2 Module, T C Reference — — 0.18 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R th(j-c) ’Q Per IGBT 1/2 Module, — — 0.046 °C/W
T C Reference Point Under Chips
Contact Thermal Resistance R th(c-f) Per 1/2 Module, Thermal Grease Applied — 0.02 — °C/W
External Gate Resistance R G 1.0 — 10 Ω
COLLECTOR CURRENT, I C
, (AMPERES)
600
450
300
150
V GE =
20V
OUTPUT CHARACTERISTICS
(TYPICAL)
13
15
12
T j = 25 o C
0
0 2 4 6 8 10
11
10
COLLECTOR-EMITTER VOLTAGE, V CE
, (VOLTS)
9
COLLECTOR-EMITTER
SATURATION VOLTAGE, V CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
3
2
1
V GE = 15V
T j = 25°C
T j = 125°C
0
0 150 300 450
COLLECTOR-CURRENT, I C , (AMPERES)
600
COLLECTOR-EMITTER
SATURATION VOLTAGE, V CE(sat) , (VOLTS)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
8
6
4
2
T j = 25°C
I C = 600A
I C = 300A
I C = 120A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
EMITTER CURRENT, I E , (AMPERES)
10 3
10 2
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T j = 25°C
T j = 125°C
10 1 0 1 2 3 4 5
EMITTER-COLLECTOR VOLTAGE, V EC
, (VOLTS)
CAPACITANCE, C ies
, C oes
, C res
, (nF)
10 2
10 1
10 0
V GE = 0V
CAPACITANCE VS. V CE
(TYPICAL)
C ies
C oes
C res
10 -1 10 0 10 1 10 2
10 3 t d(on)
10 2
t r
10 1
10 0
10 1 10 2
10 -1 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
COLLECTOR CURRENT, I C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t d(off)
t f
V CC = 600V
V GE = ±15V
R G = 1.0Ω
T j = 125°C
Inductive Load
10 3
3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DY-24NF
Dual IGBTMOD NF-Series Module
300 Amperes/1200 Volts
REVERSE RECOVERY TIME, t rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10 3 10 3
10 2
10 1 10 1 10 2
REVERSE RECOVERY CURRENT, I rr , (AMPERES)
I I C = 300A
V CC = 600V
rr
t V GE = 15V
rr
10 1
0
10 0
10 3 0 500 1000 1500 2000 2500 3000
16
R G = 1.0Ω
V CC = 400V
T j = 125°C
Inductive Load
12
V CC = 600V
C Snubber at Bus
10 2
10 1
8
V CC = 600V
V GE = 15V
R G = 1.0Ω
4
E
T j = 25°C
SW(on)
Inductive Load
E SW(off)
EMITTER CURRENT, I E
, (AMPERES)
GATE CHARGE, Q G , (nC)
COLLECTOR CURRENT, I C , (AMPERES)
GATE-EMITTER VOLTAGE, V GE
, (VOLTS)
20
GATE CHARGE VS. V GE
SWITCHING LOSS, E SW(on)
, E SW(off)
, (mJ/PULSE)
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
10 2 10 1 10 2
10 3
SWITCHING LOSS, E SW( on)
, E SW( off)
, (mJ/PULSE)
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
10 3 V CC = 600V
V GE = 15V
I C = 300A
T j = 125°C
Inductive Load
C Snubber at Bus
10 2
E SW(on)
E SW(off)
10 1 10 0 10 1
10 2
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c')
Z th
= R th
• (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10 0 10 -3 10 -2 10 -1 10 0 10 1
10 -1
10 -1
Single Pulse
T C = 25°C
Per Unit Base =
R th(j-c) =
10 -2 0.11°C/W
10 -2
(IGBT)
R th(j-c) =
0.18°C/W
(FWDi)
10 -3 10 -3
10 -5 10 -4 10 -3
GATE RESISTANCE, R G
, (Ω)
TIME, (s)
4