General-Purpose Small-Signal Surface-Mount ... - Semiconductors

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1 New Products 200-mA CMOS LDO Regulators in a Ultra-Small Package (Single-Output) TCR4SxxWBG and TCR4SxxDWBG Series New Product CMOS LDO regulators are now available in the WCSP4 ultra-small package The WCSP4 package occupies only 0.63 mm 2 of board area and is thus ideal for applications that require high-density board assembly. The CMOS LDO regulators in the WCSP4 package are available with a fixed output voltage between 1.2 V and 3.6 V. The output voltage is able to fix in steps of 50 mV. The TCR4SxxDWBG Series provides an auto-discharge function, which makes it ideal for applications with complex timing control. ■ Applications Cell phones, digital still cameras, portable audio players and other compact portable equipment ■ Features ● High ripple rejection: R.R = 80 dB (typ.) at IOUT = 10 mA, f = 1 kHz ● Low noise voltage: VNO = 30 μVrms (typ.) at 2.5-V output, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz ● Allows the use of ceramic capacitors (CIN = 0.1 μF, COUT = 1.0 μF) ● Ultra-small package: WCSP4 (0.79 x 0.79 x 0.50 mm) Part Number TCR4S15WBG TCR4S18WBG TCR4S28WBG TCR4S30WBG TCR4S12DWBG TCR4S15DWBG TCR4S18DWBG TCR4S20DWBG TCR4S21DWBG TCR4S25DWBG TCR4S26DWBG TCR4S27DWBG TCR4S28DWBG TCR4S285DWBG TCR4S29DWBG TCR4S295DWBG TCR4S30DWBG TCR4S33DWBG VOUT(V) 1.5 1.8 2.8 3.0 1.2 1.5 1.8 2.0 2.1 2.5 2.6 2.7 2.8 2.85 2.9 2.95 3.0 3.3 Control pin Connection Open Pull-down Auto Discharge No Yes ■ Package Dimensions WCSP4 Package 0.79 0.4 0.30 0.79 0.4 ■ Auto-Discharge Function (Example shown for a 1.5-V LDO regulator) Control pin Voltage VCT (1V/div) Output Voltage VOUT (1V/div) Output Voltage VOUT (1V/div) Without auto discharge With auto discharge φ0.26 0.20 0.50 VIN = 2.5 V, IOUT = 10 mA CIN = 0.1 μF, COUT = 1 μF Time (200 μs/div) Discharges the electric charge of the external output capacitor quickly. Unit: mm LDOs: Page 28- Digital-Output Magnetic Sensors TCS20DPC, TCS20DLC Available in the 0.38-mm ultra-thin, small CST6C package The TCS20DPC and TCS20DLC are digital-output magnetic sensors. These digital-output magnetic sensors are ideal for applications with open/close or sliding mechanisms, such as cell phones, notebook PCs and digital still cameras. The new digital-output magnetic sensors are much thinner and smaller than their predecessors and thus save board space. ■ Applications Cell phones, notebook PCs, digital still cameras, etc. ■ Features ● Ultra-thin, small package with a thickness of 0.38 mm (CST6C: 1.5 mm x 1.15 mm x 0.38 mm) ● South-Pole and North-Pole detections (Double detections) ● Magnetic flux density (|BON| = 3.8 mT (max), |BOFF| = 0.3 mT (min)) ● Push-pull output (TCS20DPC) and open-drain output (TCS20DLC) ● Low quiescent-bias current (Average current ICC = 12.8 μA at VCC = 3.3 V) ● Extended operating voltage range (VCC = 2.3 to 3.6 V) ■ Package Dimensions CST6C Package 0.38 1.15 0.90 1.5 1.20 0.60 0.05 0.45 0.95 0.20 0.05 0.15 0.60 Unit: mm Part Number TCS20DPC TCS20DLC Output Configuration Push-Pull Open-Drain Digital-Output Magnetic Sensors: Page 34- 4
0.7 2.0 ±0.1 520 and 521 Small-Signal Schottky Barrier Diode (SBD) Series (CES520/521, CTS520/521, CUS520/521) Low-VF and low-IR SBDs fabricated with a new process Toshiba has developed, using a new process, small-signal Schottky barrier diodes (SBDs). Included among our latest products are low-VF and low-IR SBDs. These SBDs are available in three new packages: ESC, USC and CST2. They are ideally suited for battery-powered applications that require reduced power consumption. They can also be used as replacements for competitors' devices. ■ Applications Current reversal prevention, low-voltage rectification, high-efficiency DC-DC converters, IC protection ● Cell phones ● Digital still cameras ● ■ Electrical Characteristics Game consoles ● PC peripherals 520 Series 521 Series Characteristic Forward Voltage Reverse Current Total Capacitance Forward Voltage Reverse Current Total Capacitance Symbol VF IR CT VF IR CT Test Conditions IF = 200 mA VR = 30 V VR = 0, f = 1 MHz IF = 200 mA VR = 30 V VR = 0, f = 1 MHz Min – – – – – – Typ. 0.52 – 17 0.45 – 26 Max 0.6 5 – 0.5 30 – Unit V μA pF V μA pF Small-Signal Diodes: Page 42- Low-Noise CMOS Operational Amplifier TC75S63TU Toshiba has added the TC75S63TU featuring low equivalent input noise voltage to its CMOS op amp portfolio. Housed in a tiny package, it is ideal for applications that amplify a weak signal from a vibration sensor, etc. ■ Features ● Low equivalent input noise voltage: 7.8 nV/ Hz typ. at VDD = 3.3 V, f = 1 kHz ● Small phase delay: –2.5 degree typ. at VDD = 3.3 V, f = 2 kHz ● Small input bias current: 1 pA typ. at VDD = 3.3 V ● Small package: UFV (2.0 x 2.1 x 0.7 mm) ● Suitable for the applications such as shocksensors, etc. ■ Package Dimensions UFV Package 0.3 Unit: mm ■ Equivalent Input Noise Voltage vs. Frequency (at VDD = 3.3 V, Ta = 25°C) 1.7 2.1 Equivalent Input Noise Voltage (nV/ Hz) 100 90 80 70 60 50 40 30 20 10 0 10 100 Frequency (Hz) 1000 ■ Pin Assignments VDD + – OUT IN(+) VSS IN(–) Op Amps & Comparators: Page 38- 5
Page 1 and 2: 2011-5 PRODUCT GUIDE General-Purpos
Page 3: 1 New Products Semi-power P-channel
Page 7 and 8: 2.2 Roadmap for Toshiba MOSFET Deve
Page 9 and 10: 2.4 Over 500 mA Series MOSFET (Semi
Page 11 and 12: ■ Dual MOSFETs (Continued) Packag
Page 13 and 14: 2.5 Under 500 mA Series MOSFET (Sta
Page 15 and 16: 3.2 New Product Information LVP Ser
Page 17 and 18: Key Electrical Characteristics of t
Page 19 and 20: Key Electrical Characteristics of t
Page 21 and 22: Low-Power-Consumption The lowered p
Page 23 and 24: 3.4 Typical Characteristics for Low
Page 25 and 26: 3 L-MOS (1- to 3-Gate Logic ICs) 3.
Page 27 and 28: 4 LDO (Low-Dropout Regulators) 4.1
Page 29 and 30: 4 LDO (Low-Dropout Regulators) ■
Page 31 and 32: 4 LDO (Low-Dropout Regulators) 4.2
Page 33 and 34: 5 Magnetic Sensors Digital-Output M
Page 35 and 36: 0.3 1.05 5 Magnetic Sensors ■ Mag
Page 37 and 38: 7 Op Amp and Comparator ICs 7.1 Low
Page 39 and 40: 7 Op Amp and Comparator ICs 7.5 Pro
Page 41 and 42: 8 Small-Signal Diodes 8.1 Switching
Page 43 and 44: 8 Small-Signal Diodes High-IO, Low-
Page 45 and 46: 8 Small-Signal Diodes 8.3 New Produ
Page 47 and 48: 8 Small-Signal Diodes 8.4 ESD-Prote
Page 49 and 50: 8 Small-Signal Diodes ■ High-Spee
Page 51 and 52: 9 Small-Signal Transistors 9.1 Gene
Page 53 and 54: Ratings R1 4.7 10 22 47 2.2 4.7 10
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Bias Resistor Built-in Transistors
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■ Small-Signal Diodes ■ Switchi
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Package Toshiba JEITA - Part Number
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Package Toshiba JEITA − Part Numb
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MOSFET MOSFET MOSFET LDO LDO LDO Di
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Toshiba Package Name Appearance Pac
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Toshiba Package Name TSM Packing qu
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■ Magnetic Sensors ■ ESD-Protec
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General-Purpose Small-Signal Surface-Mount ... - Semiconductors

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