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GI850 thru GI858 Fast Switching Plastic Rectifier

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<strong>Fast</strong> <strong>Switching</strong> <strong>Plastic</strong> <strong>Rectifier</strong><br />

<strong>GI850</strong> <strong>thru</strong> <strong>GI858</strong><br />

Vishay General Semiconductor<br />

DO-201AD<br />

MAJOR RATINGS AND CHARACTERISTICS<br />

I F(AV)<br />

3.0 A<br />

V RRM<br />

50 V to 800 V<br />

I FSM<br />

100 A<br />

t rr<br />

200 ns<br />

I R 10 µA<br />

V F<br />

1.25 V<br />

T j max. 150 °C<br />

FEATURES<br />

• <strong>Fast</strong> switching for high efficiency<br />

• Low forward voltage drop<br />

• Low leakage current<br />

• High forward surge capability<br />

• Solder Dip 260 °C, 40 seconds<br />

• Component in accordance to RoHS 2002/95/EC<br />

and WEEE 2002/96/EC<br />

TYPICAL APPLICATIONS<br />

For use in fast switching rectification of power supply,<br />

inverters, converters and freewheeling diodes for<br />

consumer and telecommunication.<br />

(Note: These devices are not Q101 qualified.<br />

Therefore, the devices specified in this datasheet have<br />

not been designed for use in automotive or Hi-Rel<br />

applications.)<br />

MECHANICAL DATA<br />

Case: DO-201AD, molded epoxy body<br />

Epoxy meets UL 94V-0 flammability rating<br />

Terminals: Matte tin plated (E3 Suffix) leads,<br />

solderable per J-STD-002B and JESD22-B102D<br />

Polarity: Color band denotes cathode end<br />

MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)<br />

PARAMETER SYMBOL <strong>GI850</strong> GI851 GI852 GI854 GI856 <strong>GI858</strong> UNIT<br />

Maximum repetitive peak reverse voltage V RRM 50 100 200 400 600 800 V<br />

Maximum RMS voltage V RMS 35 70 140 280 420 560 V<br />

Maximum DC blocking voltage V DC 50 100 200 400 600 800 V<br />

Maximum non-repetitive peak reverse voltage V RSM 75 150 250 450 650 880 V<br />

Maximum average forward rectified current<br />

0.375" (9.5 mm) lead length at T A = 90 °C<br />

I F(AV) 3.0 A<br />

Peak forward surge current 8.3 ms single half<br />

sine-wave superimposed on rated load<br />

I FSM 100 A<br />

Operating junction and storage temperature range T J , T STG - 50 to + 150 °C<br />

Document Number 88630<br />

04-May-06<br />

www.vishay.com<br />

1


<strong>GI850</strong> <strong>thru</strong> <strong>GI858</strong><br />

Vishay General Semiconductor<br />

ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)<br />

PARAMETER TEST CONDITIONS SYMBOL <strong>GI850</strong> GI851 GI852 GI854 GI856 <strong>GI858</strong> UNIT<br />

Maximum<br />

instantaneous<br />

forward voltage<br />

at 3.0 A<br />

at 9.4 A, T J = 175 °C<br />

V F<br />

1.25<br />

1.10<br />

V<br />

Maximum DC reverse<br />

current at rated DC<br />

blocking voltage<br />

T A = 25 °C<br />

T A = 100 °C<br />

I R<br />

10<br />

150 150 200 250 300 500<br />

µA<br />

Maximum reverse<br />

recovery time<br />

Maximum reverse<br />

recovery time<br />

Typical junction<br />

capacitance<br />

at I F = 1.0 A, V R = 30 V,<br />

di/dt = 50 A/µs, I rr = 10 % I RM<br />

at I F = 1.0 A, V R = 30 V,<br />

di/dt = 50 A/µs, I rr = 10 % I RM<br />

t rr 200 ns<br />

I RM(REC) 2.0 A<br />

at 4.0 V, 1 MHz C J 28 pF<br />

THERMAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)<br />

PARAMETER SYMBOL <strong>GI850</strong> GI851 GI852 GI854 GI856 <strong>GI858</strong> UNIT<br />

Typical thermal resistance (1)<br />

R θJA<br />

R θJL<br />

Note:<br />

(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink<br />

22<br />

8.0<br />

°C/W<br />

ORDERING INFORMATION<br />

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE<br />

GI856-E3/54 1.1 54 1400 13" Diameter Paper Tape & Reel<br />

GI856-E3/73 1.1 73 1000 Ammo Pack Packaging<br />

RATINGS AND CHARACTERISTICS CURVES<br />

(T A = 25 °C unless otherwise noted)<br />

Average Forward Rectified Current (A)<br />

8.0<br />

6.0<br />

4.0<br />

2.0<br />

TL = Lead Temperature<br />

L = 0.25" (6.3 mm)<br />

L = 0.375" (9.5 mm)<br />

Lead Length<br />

T A =Ambient Temperature<br />

0.375" (9.5 mm) Lead Length<br />

0<br />

30 50 70 90 110 130 150 170<br />

Temperature (°C)<br />

L=Lead Length<br />

0.8 x 0.8 x 0.40"<br />

(20 x 20 x 1 mm)<br />

Copper Heatsinks<br />

Peak Forward Surge Current (A)<br />

200<br />

100<br />

8.3 ms Single Half Sine-Wave<br />

TJ = 25 °C<br />

Non-Repetitive<br />

TJ = 150 °C<br />

TJ = 25 °C<br />

TJ<br />

Repetitive<br />

= 150 °C<br />

10<br />

1 10 100<br />

Number of Cycles at 60 Hz<br />

Figure 1. Forward Current Derating Curves<br />

Figure 2. Maximum Peak Forward Surge Current<br />

www.vishay.com<br />

2<br />

Document Number 88630<br />

04-May-06


<strong>GI850</strong> <strong>thru</strong> <strong>GI858</strong><br />

Vishay General Semiconductor<br />

100<br />

100<br />

Instantaneous Forward Current (A)<br />

10<br />

1<br />

0.1<br />

TJ = 25 °C<br />

Pulse Width = 300 µs<br />

1 % Duty Cycle<br />

Junction Capacitance (pF)<br />

TJ = 25 °C<br />

f = 1.0 MHz<br />

Vsig = 50 mVp-p<br />

0.01<br />

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br />

Instantaneous Forward Voltage (V)<br />

Figure 3. Typical Instantaneous Forward Characteristics<br />

10<br />

1 10 100<br />

Reverse Voltage (V)<br />

Figure 5. Typical Junction Capacitance<br />

10<br />

Instantaneous Reverse Current (µA)<br />

1<br />

0.1<br />

TJ = 100 °C<br />

TJ = 50 °C<br />

TJ = 25 °C<br />

0.01<br />

0 20 40 60 80 100<br />

Percent of Rated Peak Reverse Voltage (%)<br />

Figure 4. Typical Reverse Characteristics<br />

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)<br />

DO-201AD<br />

0.210 (5.3)<br />

0.190 (4.8)<br />

DIA.<br />

1.0 (25.4)<br />

MIN.<br />

0.375 (9.5)<br />

0.285 (7.2<br />

0.052 (1.32)<br />

0.048 (1.22)<br />

DIA.<br />

1.0 (25.4)<br />

MIN.<br />

Document Number 88630<br />

04-May-06<br />

www.vishay.com<br />

3

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