MRAM: A New Technology for the Future - NCCAVS - User Groups

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Memory Cell: Write And Read Operation Read Mode Detection of the MR effect: Read 0: Spins aligned Read 1: Spins opposing Write Mode Write 0: Aligned current pulses in bit and word lines: Spins aligned Write 1: Opposed current pulses in bit and word lines: Spins opposing NCCAVS March 17, 2004 12 Kamel Ounadjela (kno@cypress.com)
STANDARD MRAM PROCESS PERIPHERY MRAM CELL MAGNETIC STACK Bit Line Digit Line M2 M1 = ST CMOS Process ADDS ON TO STANDARD LOGIC AND/OR MEMORY PROCESS NCCAVS March 17, 2004 13 Kamel Ounadjela (kno@cypress.com)
Page 1 and 2: MRAM: A NEW TECHNOLOGY FOR THE FUTU
Page 3 and 4: Magnetic Memory: Historical Perspec
Page 5 and 6: Emerging Memories • Industry’s
Page 7 and 8: Cypress Objectives ? Deliver 256K W
Page 9 and 10: MRAM BASICS (1): THE MTJ ? MTJ Magn
Page 11: MRAM BASICS (3): WRITING DATA CURRE
Page 15 and 16: IMPORTANCE OF WITHIN-ARRAY MATCHING
Page 17 and 18: READ YIELD: HOMOGENEITY OF TUNNEL B
Page 19 and 20: HOMOGENEITY OF TUNNEL BARRIER • W
Page 21 and 22: 13 ? The Half Select Problem: ? Swi
Page 23 and 24: WRITE/DISTURB DISTRIBUTIONS: What a
Page 25 and 26: 1 DIE SORT YIELD W/ BL & DL DISTURB
Page 27 and 28: 19 How reversal occurs when startin
Page 29 and 30: Switching Distribution 25 1.0 0.9 0
Page 31 and 32: Simple Picture for Interlayer Coupl
Page 33 and 34: Origin of interlayer coupling (1) 2
Page 35 and 36: 1 2 3 4 5 NEAR-ZERO NEEL COUPLING
Page 37 and 38: 38 SUMMARY ? Most of the issues to

MRAM: A New Technology for the Future - NCCAVS - User Groups

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