The Use of Amorphous Silicon in Fabricating a Photovoltaic-Thermal ...
The Use of Amorphous Silicon in Fabricating a Photovoltaic-Thermal ...
The Use of Amorphous Silicon in Fabricating a Photovoltaic-Thermal ...
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Lower Cell Emissivity<br />
• Replace p-type a-Si:H layer with p-type a-C:H<br />
• a-C:H/Ti films used as low-E coat<strong>in</strong>g for STC<br />
• IR Emittance (100ºC): 6% [Schuler et al, 2000]<br />
• a-C:H acts as w<strong>in</strong>dow layer and helps <strong>in</strong>crease PV efficiency<br />
• Eg <strong>of</strong> p-type a-C:H: 2.0eV [Han et al, 2007]<br />
• Eg <strong>of</strong> p-type a-Si:H: 1.7eV [Han et al, 2007]<br />
• Efficiency <strong>in</strong>creased from 5.1% to 5.6% [Han et al, 2007]<br />
p-type a-Si:H<br />
i-type a-Si:H<br />
n-type a-Si:H<br />
h+<br />
e-<br />
E<br />
p-type a-C:H<br />
i-type a-Si:H<br />
n-type a-Si:H<br />
(a)<br />
(b)<br />
Figure 4: (a) conventional a-Si:H p-i-n design (b) a-C:H w<strong>in</strong>dow layer design<br />
h+<br />
e-<br />
h+<br />
e-<br />
E<br />
University <strong>of</strong> Toronto