The Use of Amorphous Silicon in Fabricating a Photovoltaic-Thermal ...

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Lower Cost c-Si PV: • Cylindrical ingots from molten Si • New c-Si “thin-film” deposition temperature: 800ºC-1400ºC [B.P. Nelson et al, 2003] • Metals have high thermal exp. and low melting point a-Si:H thin-film PV: • Can be deposited over large areas at low temperatures (
Staebler-Wronski Effect • a-Si:H PV suffers from light-induced degradation - Staebler-Wronksi Effect (SWE) • Exposure to light increases defect density • Increase defect density leads to increase in recombination current and decrease in efficiency • Effect saturates after 1000h of light exposure with efficiency leveling off at 30% lower than initial efficiency [Luque et al, 2003] • SWE can be reversed by annealing at T ~ 150°C for few minutes [Luque et al, 2003] University of Toronto
Page 1 and 2: The Use of Amorphous Silicon in Fab
Page 3 and 4: Thermal Generation in PV • Conver
Page 5 and 6: Current Status in PV/T • Practica
Page 7: a-Si:H PV/T • Lower cost • Impr
Page 11 and 12: Improved Thermal Efficiency Increas
Page 13 and 14: Lower Cell Emissivity • Replace p
Page 15 and 16: Summary • PV/T utilizes intrinsic
Page 17 and 18: References Affolter, P., Ruoss, D.,
Page 19 and 20: References Ogden, T.R., Rathsam, A.
Page 21: Thank you for your attention! Any Q

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