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The Use of Amorphous Silicon in Fabricating a Photovoltaic-Thermal ...

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Staebler-Wronski Effect<br />

• a-Si:H PV suffers from light-<strong>in</strong>duced degradation - Staebler-Wronksi<br />

Effect (SWE)<br />

• Exposure to light <strong>in</strong>creases defect density<br />

• Increase defect density leads to <strong>in</strong>crease <strong>in</strong> recomb<strong>in</strong>ation current and<br />

decrease <strong>in</strong> efficiency<br />

• Effect saturates after 1000h <strong>of</strong> light exposure with efficiency level<strong>in</strong>g <strong>of</strong>f<br />

at 30% lower than <strong>in</strong>itial efficiency [Luque et al, 2003]<br />

• SWE can be reversed by anneal<strong>in</strong>g at T ~ 150°C for few m<strong>in</strong>utes [Luque<br />

et al, 2003]<br />

University <strong>of</strong> Toronto

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