SJDA065R055

Silicon Carbide
SJDA065R055
Normally-On Trench Silicon Carbide Power JFET
Features:
- Positive Temperature Coefficient for Ease of Paralleling
- Extremely Fast Switching with No "Tail" Current at 150 °C
- R DS(on) max of 0.055 Ω
- Voltage Controlled
- Low Gate Charge
- Low Intrinsic Capacitance
Product Summary
BV DS 650
R DS(on)max 0.055
G(1)
D(2,4)
V
Ω
Applications:
TO-220
- Solar Inverter
S(3)
- SMPS
- Power Factor Correction Internal Schematic
- Induction Heating
- UPS
- Motor Drive
MAXIMUM RATINGS
Parameter
Symbol
Conditions
Value
Unit
Continuous Drain Current
Pulsed Drain Current (1)
Short Circuit Withstand Time
I D, TC=25
I D, TC=100
I DM
T C = 25 °C
T C = 100 °C
T j = 25 °C
t SC V DD < 800 V, T C < 125 °C
T C = 25 °C
30
20
80
50
A
A
µs
Power Dissipation
P D
114
W
Gate-Source Voltage
AC (2)
-15 to +15
V
Operating and Storage Temperature
-55 to +150
°C
(2) Rg (EXT) = 1 Ω, t p < 200 ns, see Figure 6 for static conditions
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, junction-to-case
Thermal Resistance, junction-to-ambient
T j , T stg
-
V GS
50
Lead Temperature for Soldering
T sold 1/8" from case < 10 s
260
(1) Pulse width limited by maximum junction temperature
°C
Symbol
R th,JC
R th,JA
Typ
-
Value
Max
1.1
Unit
°C / W
SJDP065R055 Rev 1.0 1/7

Silicon Carbide
SJDA065R055
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Conditions
Min
Value
Typ
Max
Unit
Off Characteristics
Drain-Source Blocking Voltage BV DS V GS = -15 V, I D = 600 µA 650 - -
Total Drain Leakage Current
I DSS
V DS = 650 V, V GS = -15 V,
T j = 25 o C
- 10 -
V DS = 1200 V, V GS = -15 V,
T j = 150 o C
- 100 -
Total Gate Reverse Leakage
I GSS
V GS = -15 V, V DS = 0 V
V GS = -15 V, V DS = 650 V - 0.1
-
0.1
0.3
-
V
µA
mA
On Characteristics
Drain-Source On-resistance
Gate Threshold Voltage
Gate Forward Current
Gate Resistance
I D = 20 A, V GS = 2 V,
T j = 25 °C
R DS(on)
I D = 20 A, V GS = 2 V,
T j = 100 °C
V GS(th)
I GFWD
R G
V DS = 1 V, I D = 30 mA
V GS = 2 V
f = 1 MHz, drain-source shorted
- 0.050 0.055
- 0.07 -
- -5 -
- 23 -
- 6 -
Ω
V
µA
Ω
Dynamic Characteristics
Input Capacitance
C iss
- 470 -
V DD = 100 V, V GS = -15 V
Output Capacitance
C oss
- 130 -
f = 100 kHz
Reverse Transfer Capacitance C rss - 120 -
Turn-on Delay
t on - 10 -
Gate Driver = +15 V, -15 V,
Fall Time
t f - 16 -
Rg (EXT) = 1 Ω
Turn-on Energy
E on - 56 -
Effective Output Capacitance,
V DS = 0 V to 400 V,
C
energy related
o(er)
V GS = -15 V
- 90 -
Switching Characteristics
Rise Time
t r
V DS = 325 V, I D = 20 A,
- 20 -
Turn-off Delay t off
Inductive Load, T j = 25 o C
- 20 -
Turn-off Energy
E off
See Figure 13
- 63 -
Total Switching Energy
E ts
- 119 -
Turn-on Delay
t on - TBD -
Rise Time
t r
V DS = 325 V, I D = 20 A,
- TBD -
Turn-off Delay
t off
Inductive Load, T j = 150 o C - TBD -
Gate Driver = +15 V, -15 V,
Fall Time
t f
- TBD -
Rg (EXT) = 1 Ω
Turn-on Energy
- TBD -
E on
E off
Turn-off Energy See Figure 13
- TBD - µJ
Total Switching Energy
E ts
- TBD -
Total Gate Charge
Q g
- 70 -
V DS = 400 V, I D = 20 A
Gate-Source Charge
Q gs - 6 - nC
V GS = -15 V to + 2 V
Gate-Drain Charge
- 48 -
Q gd
pF
ns
µJ
ns
SJDP065R055 Rev 1.0 2/7

Silicon Carbide
SJDA065R055
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
I D = f(V DS ); T j = 25 °C; parameter: V GS
I D = f(V DS ); T j = 100 °C; parameter: V GS
I D , Drain Current (A)
80
70
60
50
40
30
20
10
2.0 V
1.0 V
0.0 V
-1.0 V
-2.0 V
I D , Drain Current (A)
50
45
40
35
30
25
20
15
10
5
2.0 V
1.0 V
0.0 V
-1.0 V
-2.0 V
0
0 1 2 3 4 5
V DS , Drain-Source Voltage (V)
0
0 1 2 3 4 5
V DS , Drain-Source Voltage (V)
Figure 3. Typical Output Characteristics
I D = f(V DS ); T j = 150 °C; parameter: V GS
Figure 4. Safe Operating Area
I D = f(V DS ); T C = 25 o C
I D , Drain Current (A)
45
40
35
30
25
20
15
10
5
0
2.0 V
1.0 V
0.0 V
-1.0 V
-2.0 V
0 1 2 3 4 5
I D , Drain-Source Current (A)
10
1
0
limit
DC
1 10 100 1000
V DS , Drain-Source Voltage (V)
V DS , Drain-Source Voltage (V)
Figure 5. Typical Transfer Characteristics
I D = f(V GS ); V DS = 5 V; T j = 25 o C
Figure 6. Gate Current
I G = f(V GS ); parameter: T j
80
1.E-02
I D , Drain Current (A)
70
60
50
40
30
20
I G , Gate Current (A)
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
150 o C
25 o C
10
0
-5.00 -3.00 -1.00 1.00
1.E-09
1.E-10
0.0 0.5 1.0 1.5 2.0
V GS , Gate-Source Voltage (V)
V GS , Gate-Source Voltage (V)
SJDP065R055 Rev 1.0 3/7

Figure 7. Drain-Source On-resistance
R DS(on) = f(I D ); V GS = 2.0 V; parameter: T j
Silicon Carbide
SJDA065R055
Figure 8. Drain-Source On-resistance
R DS(ON) = f(T j ); I D = 20 A; parameter: V GS
R DS(on) , Drain-Source On-resistance (Ω)
1.00
0.10
0.01
150 o C
100 o C
25 o C
0 20 40 60 80 100
R DS(on) , Drain-Source On-resistance (Ω)
0.14
0.12
0.10
0.08
0.06
0.04
0V
1V
2V
0 25 50 75 100 125 150 175
I D , Drain Current (A)
T j , Junction Temperature (°C)
Figure 9. Drain-Source On-resistance
R DS(on) = f(V GS ); I D = 20 A; T j = 25 o C
Figure 10. Typical Capacitance
C = f(V DS ); V GS = -15 V; f = 100 kHz
R DS(on) , Drain-Source On-resistance (Ω)
0.080
0.075
0.070
0.065
0.060
0.055
0.050
0.045
0.040
-1.0 0.0 1.0 2.0
V GS , Gate-Source Voltage (V)
C, Capacitance (pF)
5.E+02
5.E+01
C iss
C oss
C rss
0 100 200 300 400
V DS , Drain-Source Voltage (V)
5
Figure 11. Gate Charge
Q g = f(V GS ); V DS = 400 V; I D = 20 A; T j = 25 o C
1E-05
Figure 12. Drain-Source Leakage
I DSS = f(V DS ); V GS = -15 V; parameter: T j
V GS , Gate-Source Voltage (V)
0
-5
-10
-15
0 20 40 60 80
Qc, Gate Charge (C)
I DSS , Drain Leakage Current (A)
1E-06
1E-07
1E-08
0 300 600
V DS , Drain-Source Voltage (V)
SJDP065R055 Rev 1.0 4/7

Silicon Carbide
SJDA065R055
Figure 13. Switching Energy Losses
E s = f(I D ); V DS = 325 V; GD = +15 V/-15 V, R GEXT = 1 Ω
400
E, Switching Energy (uJ)
350
300
250
200
150
100
50
0
Ets
Eoff
Eon
0 10 20 30 40 50
ID, Drain Current (A)
Figure 14. Inductive Load Switching Circuit
Single Switch Configuration
DUT =
SJDA065R055
D =
SDP20S120D
SJDP065R055 Rev 1.0 5/7

Silicon Carbide
SJDA065R055
DIM
MILLIMETERS
INCHES
MIN MAX MIN MAX
A 4.191 4.699 0.165 0.185
A1 2.387 2.489 0.094 0.098
A2 1.219 1.321 0.048 0.052
b 0.635 0.889 0.025 0.035
b1 1.143 1.397 0.145 0.055
c 0.458 0.635 0.018 0.025
D 15.113 16.621 0.595 0.615
D1 9.017 9.271 0.355 0.365
e
2.540 0.100
E 9.677 9.931 0.381 0.391
L 12.700 12.954 0.500 0.510
L1 3.048 3.302 0.120 0.130
Q 2.540 3.048 0.100 0.120
ØP 3.632 3.734 0.143 0.147
SJDP065R055 Rev 1.0 6/7

Silicon Carbide
SJDA065R055
Published by
SemiSouth Laboratories, Inc.
201 Research Boulevard
Starkville, MS 39759 USA
© SemiSouth Laboratories, Inc. 2012
Information in this document supersedes and replaces all information previously supplied.
Information in this document is provided solely in connection with SemiSouth products. SemiSouth
Laboratories, Inc. reserves the right to make changes, corrections, modifications or improvements, to this
document without notice.
No license, express or implied to any intellectual property rights is granted under this document.
Unless expressly approved in writing by an authorized representative of SemiSouth, SemiSouth products are
not designed, authorized or warranted for use in military, aircraft, space, life saving, or life sustaining
applications, nor in products or systems where failure or malfunction may result in personal injury, death, or
property or environmental damage.
SJDP065R055 Rev 1.0 7/7