Datasheet / Datenblatt IG#40N65F5 - Efo-power.ru

IGBT
Highspeed5FASTIGBTinTRENCHSTOP TM 5technology
IGP40N65F5,IGW40N65F5
650VIGBThighspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl

G C E
1 2
3
IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
Highspeed5FASTIGBTinTRENCHSTOP TM 5technology
FeaturesandBenefits:
C
HighspeedF5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•650Vbreakdownvoltage
•LowQg
•IdealfitwithSICSchottkyDiodeinboostconverters
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
C
G
E
TargetApplications:
•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IGW40N65F5 650V 40A 1.6V 175°C G40F655 PG-TO247-3
IGP40N65F5 650V 40A 1.6V 175°C G40F655 PG-TO220-3
2
Rev.1.1,2012-11-09

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing PG-TO247-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Package Drawing PG-TO220-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Rev.1.1,2012-11-09

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
Maximumratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 650 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC 74.0
46.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A
TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 120.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp=10µs,D

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter Symbol Conditions
Value
min. typ. max.
Unit
DynamicCharacteristic
Input capacitance Cies - 2500 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 40 -
Reverse transfer capacitance Cres - 9 -
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
QG
LE
VCC=520V,IC=40.0A,
VGE=15V
PG-TO247-3
PG-TO220-3
pF
- 95.0 - nC
-
13.0
- nH
SwitchingCharacteristic,InductiveLoad,atTvj=25°C
Parameter Symbol Conditions
Value
min. typ. max.
Unit
IGBTCharacteristic
Turn-on delay time td(on) Tvj=25°C,
- 19 - ns
Rise time VCC=400V,IC=20.0A,
tr - 13 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=15.0Ω,Lσ=30nH,
- 160 - ns
Fall time Cσ=30pF
tf - 16 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.36 - mJ
Turn-off energy Eoff
diode reverse recovery.
- 0.10 - mJ
Total switching energy Ets - 0.46 - mJ
Turn-on delay time td(on) Tvj=25°C,
- 20 - ns
Rise time VCC=400V,IC=5.0A,
tr - 4 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=15.0Ω,Lσ=30nH,
- 175 - ns
Fall time Cσ=30pF
tf - 10 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.07 - mJ
Turn-off energy Eoff
diode reverse recovery.
- 0.03 - mJ
Total switching energy Ets - 0.10 - mJ
5
Rev.1.1,2012-11-09

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
SwitchingCharacteristic,InductiveLoad,atTvj=150°C
Parameter Symbol Conditions
Value
min. typ. max.
Unit
IGBTCharacteristic
Turn-on delay time td(on) Tvj=150°C,
- 20 - ns
Rise time VCC=400V,IC=20.0A,
tr - 14 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=15.0Ω,Lσ=30nH,
- 185 - ns
Fall time Cσ=30pF
tf - 15 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.50 - mJ
Turn-off energy Eoff
diode reverse recovery.
- 0.16 - mJ
Total switching energy Ets - 0.66 - mJ
Turn-on delay time td(on) Tvj=150°C,
- 18 - ns
Rise time VCC=400V,IC=5.0A,
tr - 5 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=15.0Ω,Lσ=30nH,
- 220 - ns
Fall time Cσ=30pF
tf - 12 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.14 - mJ
Turn-off energy Eoff
diode reverse recovery.
- 0.05 - mJ
Total switching energy Ets - 0.19 - mJ
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Rev.1.1,2012-11-09

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
275
100
250
225
IC,COLLECTORCURRENT[A]
10
1
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
Ptot,POWERDISSIPATION[W]
200
175
150
125
100
75
50
25
0.1
1 10 100 1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V.
RecommendeduseatVGE≥7.5V)
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
80
120
IC,COLLECTORCURRENT[A]
70
60
50
40
30
20
10
IC,COLLECTORCURRENT[A]
100
80
60
40
20
VGE=20V
18V
15V
12V
10V
8V
7V
6V
5V
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
0
0 1 2 3 4 5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
7
Rev.1.1,2012-11-09

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
120
120
Tj=25°C
Tj=150°C
100
VGE=20V
100
IC,COLLECTORCURRENT[A]
80
60
40
18V
15V
12V
10V
8V
7V
6V
IC,COLLECTORCURRENT[A]
80
60
40
20
5V
20
0
0 1 2 3 4 5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=150°C)
0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VGE,GATE-EMITTERVOLTAGE[V]
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
VCEsat,COLLECTOR-EMITTERSATURATION[V]
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
IC=10A
IC=20A
IC=40A
t,SWITCHINGTIMES[ns]
1000
100
10
td(off)
tf
td(on)
tr
0.50
0 25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
8
1
0 20 40 60 80 100 120
IC,COLLECTORCURRENT[A]
Figure 8. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
Rev.1.1,2012-11-09

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
1000
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
100
10
t,SWITCHINGTIMES[ns]
100
10
1
5 15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=20A,Dynamictestcircuitin
Figure E)
1
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
typ.
min.
max.
E,SWITCHINGENERGYLOSSES[mJ]
8
7
6
5
4
3
2
1
Eoff
Eon
Ets
1.0
0 25 50 75 100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.4mA)
9
0
0 20 40 60 80 100 120
IC,COLLECTORCURRENT[A]
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
Rev.1.1,2012-11-09

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
1.6
0.8
Eoff
Eoff
1.4
Eon
Ets
0.7
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
1.2
1.0
0.8
0.6
0.4
E,SWITCHINGENERGYLOSSES[mJ]
0.6
0.5
0.4
0.3
0.2
0.2
0.1
0.0
5 15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=20A,Dynamictestcircuitin
Figure E)
0.0
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
1.0
0.9
Eoff
Eon
Ets
16
14
130V
520V
E,SWITCHINGENERGYLOSSES[mJ]
0.8
0.7
0.6
0.5
0.4
0.3
0.2
VGE,GATE-EMITTERVOLTAGE[V]
12
10
8
6
4
0.1
2
0.0
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
10
0
0 20 40 60 80 100
QGE,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=40A)
Rev.1.1,2012-11-09

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
C,CAPACITANCE[pF]
1E+4
1000
100
10
Ciss
Coss
Crss
1
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1
0.1
0.01
D=0.5
0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
0.2
0.1
0.05
0.02
0.01
single pulse
i: 1
2 3
4
ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708
τi[s]: 7.3E-5 7.0E-4 0.01235548 0.08020881
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
11
Rev.1.1,2012-11-09

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
PG-TO247-3
12
Rev.1.1,2012-11-09

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
PG-TO220-3
13
Rev.1.1,2012-11-09

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
t
14
Rev.1.1,2012-11-09

IGW40N65F5,IGP40N65F5
Highspeedswitchingseriesfifthgeneration
RevisionHistory
IGW40N65F5, IGP40N65F5
Revision:2012-11-09,Rev.1.1
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2012-11-09 Preliminary data sheet
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InfineonTechnologiesAG
81726Munich,Germany
81726München,Germany
©2012InfineonTechnologiesAG
AllRightsReserved.
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Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
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and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.
15
Rev.1.1,2012-11-09