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High Power Semiconductors for Industrial Applications<strong>Short</strong> <strong>Form</strong> <strong>Catalog</strong> <strong>2008</strong>www.infineon.com/powersemiconductors
High Power semiconductors for industrial applicationsInfineon‘s leading edge high power semiconductors are designed to meet the highestdemands of standardized and application specific industrial applications in the powerrange of 0,5 kW up to more than 1 giga watt, such as industrial drives, renewable energy systems,transportation, power supplies and medical equipement.We continuously invest in the development of new technologies and products. With innovativesolutions like the 4th generation of IGBT technology with trench structures & fieldstop concept, silicon carbide diodes with highest efficiency or new packaging like Prime-PACK, we ensure optimized products for the requirements of our customers.We are always anxious to have an open dialogue with our customers. They benefit frominnovative technologies and services and we support them as far as successful marketing oftheir product is required.Conscious of the importance of energy efficiency for the future, we already deliver innovativehigh-performance solutions with best-in-class technologies helping save energyand reduce pollution. Our products are the basis for intelligent and optimal use of energyresources be it along the entire power supply chain in industrial applications.In short words, we offern A wide portfolio of innovative components combined with the latest technologies thatcater for the needs of various industrial applicationsn Reliable and highest quality products that surpass even the most tight requirementsn Advanced and cost-effective reference solutions and design supportn In-depth technical and system expertise support from a dedicated regional and technicalteam of experts3
ContentPresentation................................................ 3IGBT Modules............................................. 7Overview IGBT.............................................. 6Low Power................................................ 7EasyPIM Power Integrated Modules........... 8EasyPACK.................................................. 10EasyDUAL.................................................. 11EasyFourPACK............................................ 11EconoPIM Power Integrated Modules....... 12EconoPACK............................................. 14Medium Power.........................................1734 mm and 62 mm Modules........................ 18EconoPACK+........................................... 22EconoDUAL............................................ 23High Power..............................................25PrimePACK Modules............................... 26IGBT Modules IHM...................................... 27IGBT Modules IHV....................................... 30Diode Modules.......................................... 31EiceDRIVER ICs and Boards..................... 32Evaluation Driver Boards............................ 33Outlines.................................................... 36SCR / Diode Modules................................. 59Bridge Rectifier / AC Switches..................... 60EasyBRIDGE........................................... 61eupec EconoBRIDGE ........................... 62eupec IsoPACK ....................................... 63Outlines.................................................... 64Overview PowerBLOCK ThyristorModules for Phase Control.......................... 67PowerBLOCK Thyristor Modulesfor Phase Control....................................... 68PowerBLOCK Single ThyristorModules for Phase Control.......................... 69Overview PowerBLOCK Thyristor/Diodes Modules for Phase Control.............. 70PowerBLOCK Thyristor/DiodeModules for Phase Control.......................... 71Overview PowerBLOCK Diodes/Thyristor Modules for Phase Control............ 72PowerBLOCK Diode/ThyristorModules for Phase Control.......................... 73Overview PowerBLOCK DiodeModules for Phase Control.......................... 74PowerBLOCK Rectifier Diode Modulesfor Phase Control....................................... 75PowerBLOCK Fast Thyritor Modules............. 76PowerBLOCK Fast AsymmetricThyristor Modules...................................... 77PowerBLOCK Fast Diode Modules................ 78Outlines.................................................... 79Presspacks............................................... 83Overview Phase Control Thyristorsin Disc Housings........................................ 834
Pulsed Power Applications......................... 84Phase Control Thyristors............................. 84Fast Thyristors........................................... 89Fast Asymmetric Thyristors......................... 89Overview Rectifier in Disc Housings............. 90Rectifier Diodes......................................... 91Freewheeling Diodes.................................. 93Snubber Diodes......................................... 93Fast Rectifier Diodes................................... 94Avalanche Rectifier Diodes......................... 95Welding Diodes.......................................... 95Insulated Cells........................................... 95Outlines.................................................... 96Mounting Hardware for EasyPIM,EasyPACK, EasyBRIDGE, EasyDUALModules.................................................. 153Package Units.......................................... 154Certificates.............................................. 156Contact Worldwide................................... 157Terms and conditions of delivery .............. 161Stacks & Assemblies............................... 113Bipolar Assemblies.................................. 113ModSTACK........................................... 117PrimeSTACK............................................. 120Outlines.................................................. 123Accessories & Explanations..................... 143Gate Leads for PowerBLOCK ThyristorModules.................................................. 143Standard Gate Leads for Disc TypeDevices................................................... 144Clamping Force and Disc Diameter............ 145Type Designations.................................... 147Letter Symbols......................................... 151Further data sheets are available onrequest: IGBT-Modules, Thyristor-/Diode-Modules, Fast Thyristors, Thyristors for PhaseControl, Power Rectifier Diodes, Snubber andFreewheeling DiodesActual, extensive data can be obtained in PDFformatfrom our internet address:www.infineon.com/powersemiconductors5
ExplanationsStacksPresspacksSCR/Diode ModulesIGBTP [kW] V VIHVP. V VIHMP. V V VPrimePACKP. V V V mmP. V V V mmP. V VEconoPACK+P. V V VEconoPACKP. V V VEconoDUALP. V VEconoPIMP. V VEasyPIM/EasyPACK/EasyDUALP. I C [A]6
Low PowerModulesSCR/Diode ModulesIGBTOur Easy and Econo modules families were developed in order to have amore cost effective compact design as well as a simplified and reliable mounting. Bothproduct families are available with the well known solder or the new state-of- the-artPressFIT connections. The PressFIT process can be separated from soldering and allowsmodule mounting on soldering and component side of PCB. This increases the design flexibility.The high reliability of PressFIT contacts in general promises to increase the systemreliability. This is especially of interest, if modules are operating in harsh environments.This way, it is an optimized product generation for low and medium power industrialdrives.PresspacksThe Easy Family with different configurations like EasyPIM, EasyPACK, andEasyDUAL covers a full product scope in the power range from I C 6A up to 200 A at 600 V/1200 V. These modules without base plates are equipped with screw clamps for a new,fast, reliable and low cost mounting concept. With reduced height from 17 mm to 12 mmand injected mounting screw clamps, the new Easy1B and Easy2B housings are the optimalchoise.StacksThe Econo Family extends the power range from I C 10 A up to 200 A at 600 V/1200 V/1700 V. The available configurations are the well known EconoPIM and Econo-PACK series. The Econo housing is with copper base plate for optimized heat spread andincludes a Thermistor (NTC).Besides the standard Planar IGBT chip technology for low switching losses,saturation voltage and high switching frequency, both module families are available withthe optimized newest IGBT 4 .Explanations7
IGBT Low Power ModulesEasyPIM Power Integrated ModulesIGBTSCR/Diode ModulesPresspacksϑϑSingle Phase 600 V CESϑType IGBT Inverter Rectifier Diodes Brake Chopper Outline/V CE I C * I C V CEsat R thJH R thJC Eon+ V RRM I d R thJC V CE IC* R thJC pageV A A V K/W K/W Eoff, mJ V A K/W V A K/WT C = T C = T vj = typ. max. T vj = T C = max.80°C 25°C 25°C 125°C 80°CIGBT 3FB6R06VE3 600 6 11 1,55 4,90 3,90 0,30 800 10 2,10 L_750a/36FB10R06VE3 600 10 16 1,55 4,10 3,10 0,67 800 10 2,10 L_750a/36FB15R06VE3 600 15 20 1,55 3,50 2,60 1,05 800 10 2,10 L_750a/36IGBT 2■ FB10R06KL4 600 10 16 1,95 2,20 1,80 0,80 800 10 1,95 L_1a/37IGBT 3FB20R06XE3 600 20 27 1,55 2,35 1,95 1,00 800 20 1,60 L_1a/37IGBT 2■ FB10R06KL4G 600 10 16 1,95 2,20 1,80 0,80 800 10 1,60 L_2a/41■ FB15R06KL4 600 15 19 1,95 2,40 2,00 1,00 800 15 1,00 L_2b/41■ FB20R06KL4 600 20 25 1,95 1,80 1,60 1,29 800 20 1,00 L_2b/41IGBT 3u FB10R06W1E3 600 10 16 1,55 3,35 2,20 0,50 800 10 1,35 L_B1c/38u FB15R06W1E3 600 15 22 1,55 2,95 1,85 0,76 800 15 1,05 L_B1c/38u FB20R06W1E3 600 20 27 1,55 2,70 1,60 1,00 800 20 1,05 L_B1c/38u FB30R06W1E3 600 30 37 1,55 2,25 1,30 1,60 800 30 1,05 L_B1c/38IGBT 2FB10R06KL4G_B1 600 10 15 1,95 2,80 2,20 0,80 800 10 2,40 600 10 2,20 L_2c/92FB15R06KL4_B1 600 15 19 1,95 2,40 2,00 1,00 800 15 1,00 600 15 2,00 L_2d/92FB20R06KL4_B1 600 20 25 1,95 1,80 1,60 1,30 800 20 1,00 600 20 1,60 L_2d/92IGBT 3FB20R06YE3_B1 600 20 27 1,55 2,35 1,95 1,00 800 20 1,20 600 20 1,95 L_2d/92■ Not for new design u New type * as specified in data sheet Mounting Hardware see page 153.ExplanationsStacks8
IGBT Low Power ModulesEasyPIM Power Integrated ModulesϑThree Phase 600 V CESϑType IGBT Inverter Rectifier Diodes Brake Chopper Outline/V CE I C * I C V CEsat R thJH R thJC Eon+ V RRM I d R thJC V CE IC* R thJC pageV A A V K/W K/W Eoff, mJ V A K/W V A K/WT C = T C = T vj = typ. max. T vj = T C = max.80°C 25°C 25°C 125°C 80°CIGBT 2FP10R06KL4_B3 600 10 16 1,95 2,20 1,80 0,80 800 10 1,60 L_2f/42IGBT3FP10R06YE3_B3 600 10 16 1,55 3,40 2,90 0,50 800 20 1,60 L_2f/42IGBT 2FP10R06KL4 600 10 15 1,95 2,20 1,80 0,80 800 10 1,60 600 10 1,80 L_2e/42FP15R06KL4 600 15 20 1,95 2,05 1,60 1,00 800 15 1,60 600 15 1,60 L_2e/42FP20R06KL4 600 20 25 1,95 1,80 1,40 1,30 800 20 1,60 600 20 1,40 L_2e/42IGBT 3■ FP10R06YE3 600 10 16 1,55 3,40 2,90 0,50 800 10 1,60 600 10 2,90 L_2e/42■ FP15R06YE3 600 15 22 1,55 2,70 2,10 0,76 800 15 1,60 600 15 2,10 L_2e/42■ FP20R06YE3 600 20 27 1,55 2,35 1,95 1,00 800 20 1,60 600 20 1,95 L_2e/42■ FP30R06YE3 600 30 37 1,55 2,00 1,55 1,60 800 30 1,60 600 30 1,55 L_2e/42FP10R06YE3_B4 600 10 16 1,55 3,40 2,90 0,50 1600 10 1,45 600 10 2,90 L_2e/42FP15R06YE3_B4 600 15 22 1,55 2,70 2,10 0,76 1600 15 1,45 600 15 2,10 L_2e/42FP20R06YE3_B4 600 20 27 1,55 2,35 1,95 1,00 1600 20 1,45 600 20 1,95 L_2e/42FP30R06YE3_B4 600 30 37 1,55 2,00 1,55 1,60 1600 30 1,45 600 30 1,55 L_2e/42u FP10R06W1E3 600 10 16 1,55 3,35 2,20 0,50 1600 10 1,35 600 10 2,20 L_B1a/38u FP15R06W1E3 600 15 22 1,55 2,95 1,85 0,76 1600 15 1,35 600 15 1,85 L_B1a/38u FP20R06W1E3 600 20 27 1,55 2,70 1,60 1,00 1600 20 1,35 600 20 1,60 L_B1a/38u FP30R06W1E3 600 30 37 1,55 2,25 1,30 1,60 1600 30 1,35 600 30 1,30 L_B1a/38u FP50R06W2E3 600 50 data on request data on request data on requestIGBTSCR/Diode ModulesPresspacksThree Phase 1200 V CESϑϑType IGBT Inverter Rectifier Diodes Brake Chopper Outline/V CE I C * I C V CEsat R thJH R thJC Eon+ V RRM I d R thJC V CE IC* R thJC pageV A A V K/W K/W Eoff, mJ V A K/W V A K/WT C = T C = T vj = typ. max. T vj = T C = max.80°C 25°C 25°C 125°C 80°CIGBT 3■ FP10R12YT3 1200 10 16 1,90 2,15 1,80 2,40 1600 10 1,50 1200 10 1,80 L_2e/42FP10R12YT3_B4 1200 10 16 1,90 2,15 1,80 2,40 1600 1200 10 1,80 L_2e/42FP15R12YT3 1200 15 25 1,70 1,70 1,30 3,50 1600 15 1,40 1200 15 1,30 L_2e/42FP10R12W1T3 1200 10 16 1,90 2,70 1,60 2,40 1600 10 1,35 1200 10 1,60 L_B1a/38FP15R12W1T3 1200 15 25 1,70 2,15 1,20 3,50 1600 15 1,35 1200 15 1,20 L_B1a/38IGBT 4u FP10R12W1T4 1200 10 20 1,85 2,40 1,40 2,15 1600 10 1,35 1200 10 1,40 L_B1a/38u FP15R12W1T4 1200 15 28 1,85 2,10 1,15 2,95 1600 15 1,35 1200 15 1,15 L_B1a/38u FP25R12W2T4 1200 25 39 1,85 1,45 0,85 4,55 1600 25 1,15 1200 25 0,85 L_B2a/4u FP35R12W2T4 1200 35 54 1,85 1,20 0,70 5,80 1600 35 1,15 1200 35 0,70 L_B2a/40u FP25R12W2T4_B11 1200 25 39 1,85 1,45 0,85 4,55 1600 25 1,15 1200 25 0,85 data on requestu FP35R12W2T4_B11 1200 35 54 1,85 1,20 0,70 5,80 1600 35 1,15 1200 35 0,70 data on requestIGBT 4u FP6R12W1T4_B3 1200 6 12 1,50 2,70 1,60 1,35 1600 6 1,60 L_B1b/38u FP10R12W1T4_B3 1200 10 20 1,85 2,40 1,40 2,15 1600 10 1,35 L_B1b/38u FP15R12W1T4_B3 1200 15 28 1,85 2,10 1,15 2,95 1600 15 1,35 L_B1b/38StacksExplanations■ Not for new design u New type * as specified in data sheet Mounting Hardware see page 153...._B11 PressFIT Modules9
IGBT Low Power ModulesEasyPACKIGBTSCR/Diode ModulesPresspacksϑ600 V CESType IGBT Inverter Outline/V CE I C * I C V CEsat R thJH R thJC Eon+ pageV A A V K/W K/W Eoff, mJT C = T C = T vj = typ. max. T vj =80°C 25°C 25°C 125°CIGBT 3FS10R06VE3 600 10 16 1,55 3,70 3,00 0,50 L_750b/36FS15R06VE3 600 15 22 1,55 3,00 2,30 0,76 L_750b/36FS20R06VE3 600 20 25 1,55 2,75 2,00 1,00 L_750b/36FS30R06VE3 600 30 34 1,55 2,35 1,70 1,60 L_750b/36IGBT 2■ FS10R06VL4_B2 600 10 16 1,95 2,40 1,80 0,52 L_750c/36■ FS15R06VL4_B2 600 15 20 1,95 2,20 1,70 0,71 L_750c/36■ FS10R06XL4 600 10 17 1,95 2,20 1,65 0,55 L_1b/37■ FS15R06XL4 600 15 20 1,95 1,90 1,55 0,75 L_1b/37■ FS20R06XL4 600 20 26 1,95 1,65 1,40 1,10 L_1b/37■ FS30R06XL4 600 30 35 1,95 1,35 1,05 1,60 L_1b/37■ FS50R06YL4 600 50 55 1,95 0,95 0,62 1,85 L_2h/42IGBT 3FS6R06VE3_B2 600 6 11 1,55 4,60 3,70 0,25 L_750c/36FS10R06VE3_B2 600 10 16 1,55 3,70 3,00 0,50 L_750c/36FS15R06VE3_B2 600 15 22 1,55 3,00 2,30 0,76 L_750c/36FS20R06VE3_B2 600 20 25 1,55 2,75 2,00 1,00 L_750c/36FS10R06XE3 600 10 16 1,55 3,40 2,90 0,50 L_1b/37FS15R06XE3 600 15 22 1,55 2,70 2,10 0,76 L_1b/37FS20R06XE3 600 20 27 1,55 2,45 1,95 1,10 L_1b/37FS30R06XE3 600 30 37 1,55 2,00 1,50 1,40 L_1b/37FS50R06YE3 600 50 60 1,45 1,35 0,95 1,95 L_2h/42u FS20R06W1E3 600 20 35 1,55 1,90 1,10 1,05 LB1e/39u FS30R06W1E3 600 30 45 1,55 1,75 1,00 1,58 LB1e/39u FS50R06W1E3 600 50 70 1,45 1,46 0,73 2,06 LB1e/39StacksExplanationsϑ1200 V CESType IGBT Inverter Outline/V CE I C * I C V CEsat R thJH R thJC Eon+ pageV A A V K/W K/W Eoff, mJT C = T C = T vj = typ. max. T vj =80°C 25°C 25°C 125°CIGBT 3FS10R12VT3 1200 10 16 1,90 2,40 1,95 2,35 L_750f/36FS15R12VT3 1200 15 24 1,70 1,90 1,45 3,40 L_750f/36IGBT 3FS10R12YT3 1200 10 16 1,90 2,05 1,80 2,30 L_2g/42FS15R12YT3 1200 15 25 1,70 1,70 1,30 3,25 L_2g/42FS25R12YT3 1200 25 40 1,70 1,15 0,85 5,40 L_2g/42FS35R12YT3 1200 35 40 1,70 0,95 0,62 7,50 L_2g/42IGBT 4u FS25R12W1T4 1200 25 45 1,85 1,46 0,74 4,65 LB1e/39u FS35R12W1T4 1200 35 65 1,85 1,35 0,66 6,65 LB1e/39u FS50R12W2T4 1200 50 data on request data on requestu FS75R12W2T4 1200 75 data on request data on request■ Not for new design u New type * as specified in data sheet Mounting Hardware see page 153.10
IGBT Low Power ModulesEasyDUAL600 V CES* as specified in data sheetType IGBT Inverter Outline/V CE I C * I C V CEsat R thJH R thJC Eon+ pageV A A V K/W K/W Eoff, mJT C = T C = T vj = typ. max. T vj =80°C 25°C 25°C 125°CIGBT 3FF200R06YE3 600 200 220 1,45 0,43 0,29 9,7 L_2j/431200 V CESType IGBT Inverter Outline/V CE I C * I C V CEsat R thJH R thJC Eon+ pageV A A V K/W K/W Eoff, mJT C = T C = T vj = typ. max. T vj =80°C 25°C 25°C 125°CIGBT 3FF75R12YT3 1200 75 100 1,80 0,53 0,36 15,7 L_2j/43FF100R12YT3 1200 100 140 1,70 0,41 0,28 21,7 L_2j/43FF150R12YT3 1200 150 200 1,70 0,31 0,20 32,0 L_2j/43IGBT Low Power ModulesEasyFourPACKIGBTSCR/Diode ModulesPresspacksϑ600 V CESType IGBT Inverter Outline/V CE I C * I C V CEsat R thJH R thJC Eon+ pageV A A V K/W K/W Eoff, mJT C = T C = T vj = typ. max. T vj =80°C 25°C 25°C 125°CIGBT 3u F4-30R06W1E3 600 30 48 1,55 1,55 0,90 1,58 LB1f/39u F4-50R06W1E3 600 50 75 1,45 1,30 0,66 2,06 LB1f/39u F4-75R06W1E3 600 75 100 1,45 1,10 0,55 2,65 LB1f/39Stacksu New type* as specified in data sheetExplanations11
IGBT Low Power ModulesEconoPIMIGBTSCR/Diode Modulesϑ600 V CESType IGBT Inverter Rectifier Diodes Brake Chopper Outline/V CE I C R thJH V CEsat V RRM I d R thJC V f V CES I C,IGBT R thJC pageV A K/W V V A K/W V V A K/WT vj = T C = T vj = T C =25°C 80°C 150°C 80°CIGBT 2 Standard■ BSM10GP60 600 10 1,50 1,95 1600 40 1,00 0,90 600 10,0 1,5 M_E2a/44■ BSM15GP60 600 15 1,30 1,95 1600 40 1,00 0,95 600 10,0 1,5 M_E2a/44■ BSM20GP60 600 20 1,00 1,95 1600 40 1,00 1,00 600 10,0 1,5 M_E2a/44■ BSM30GP60 600 30 0,70 1,95 1600 40 1,00 1,10 600 15,0 1,3 M_E2a/44■ BSM50GP60 600 50 0,50 1,95 1600 40 1,00 1,30 600 25,0 1,0 M_E2a/44■ BSM50GP60G 600 50 0,50 1,95 1600 40 1,00 1,30 600 25,0 1,0 M_E3a/47■ BSM75GP60 600 75 0,40 1,95 1600 60 0,65 1,15 600 37,5 0,7 M_E3a/47■ BSM100GP60 600 100 0,30 1,95 1600 80 0,50 1,16 600 50,0 0,5 M_E3a/47IGBT 3FP30R06KE3 600 30 1,20 1,55 1600 60 0,85 0,90 600 30,0 1,2 M_E2a/44FP50R06KE3 600 50 0,80 1,45 1600 70 0,85 1,05 600 30,0 1,2 M_E2a/44FP50R06KE3G 600 50 0,80 1,45 1600 80 0,65 1,00 600 50,0 0,8 M_E3a/47FP75R06KE3 600 75 0,60 1,45 1600 100 0,50 1,05 600 50,0 0,8 M_E3a/47FP100R06KE3 600 100 0,45 1,45 1600 100 0,50 1,10 600 50,0 0,8 M_E3a/47PresspacksStacksExplanationsϑ■ Not for new design1200 V CESType IGBT Inverter Rectifier Diodes Brake Chopper Outline/V CE I C R thJH V CEsat V RRM I d R thJC V f V CES I C,IGBT R thJC pageV A K/W V V A K/W V V A K/WT vj = T C = T vj = T C =25°C 80°C 150°C 80°CIGBT 2 Standard■ BSM10GP120 1200 10 1,2 2,40 1600 40 1,00 0,90 1200 10,0 1,20 M_E2a/44■ BSM15GP120 1200 15 0,7 2,20 1600 40 1,00 0,95 1200 10,0 1,20 M_E2a/44■ BSM25GP120 1200 25 0,55 2,10 1600 40 1,00 1,05 1200 12,5 1,20 M_E2a/44■ BSM35GP120 1200 35 0,55 2,40 1600 40 1,00 1,15 1200 17,5 0,70 M_E2a/44■ BSM35GP120G 1200 35 0,55 2,40 1600 40 1,00 1,15 1200 17,5 0,70 M_E3a/47■ BSM50GP120 1200 50 0,35 2,20 1600 40 0,65 1,05 1200 25,0 0,55 M_E3a/47IGBT 2 FastFP15R12KS4C 1200 15 0,7 3,20 1600 40 1,00 0,95 1200 10,0 1,20 M_E2a/44FP25R12KS4C 1200 25 0,55 3,20 1600 40 1,00 1,05 1200 12,5 1,20 M_E2a/44FP50R12KS4C 1200 50 0,35 3,20 1600 40 0,65 1,05 1200 25,0 0,55 M_E3a/47IGBT 3FP15R12KE3G 1200 15 1,2 1,70 1600 50 1,00 0,95 1200 10,0 1,50 M_E2a/44FP25R12KE3 1200 25 0,8 1,70 1600 50 1,00 1,05 1200 15,0 1,20 M_E2a/44FP40R12KE3 1200 40 0,6 1,80 1600 50 1,00 1,20 1200 15,0 1,20 M_E2a/44FP40R12KE3G 1200 40 0,6 1,80 1600 50 1,00 1,20 1200 40,0 0,60 M_E3a/47FP50R12KE3 1200 50 0,45 1,70 1600 80 0,65 1,00 1200 40,0 0,60 M_E3a/47FP75R12KE3 1200 75 0,35 1,70 1600 80 0,65 1,15 1200 40,0 0,60 M_E3a/4712
IGBT Low Power ModulesEconoPIMϑ1200 V CESType IGBT Inverter Rectifier Diodes Brake Chopper Outline/V CE I C R thJH V CEsat V RRM I d R thJC V f V CES I C,IGBT R thJC pageV A K/W V V A K/W V V A K/WT vj = T C = T vj = T C =25°C 80°C 150°C 80°CIGBT 3 Fast■ FP10R12NT3 1200 10 1,50 1,90 1600 50 1,00 0,95 1200 10 1,50 M_E1a/44■ FP15R12NT3 1200 15 1,20 1,70 1600 50 1,00 1,00 1200 15 1,20 M_E1a/44FP15R12KT3 1200 15 1,20 1,70 1600 50 1,00 0,90 1200 10 1,50 M_E2a/44FP25R12KT3 1200 25 0,80 1,70 1600 50 1,00 1,05 1200 15 1,20 M_E2a/44FP40R12KT3 1200 40 0,60 1,80 1600 50 1,00 1,20 1200 15 1,20 M_E2a/44FP40R12KT3G 1200 40 0,60 1,80 1600 50 1,00 1,20 1200 40 0,60 M_E3a/47FP50R12KT3 1200 50 0,45 1,70 1600 80 0,65 a 1200 40 0,60 M_E3a/47FP75R12KT3 1200 75 0,35 1,70 1600 80 0,65 1,10 1200 40 0,60 M_E3a/47IGBT 4FP35R12KT4 1200 35 0,72 1,85 1600 80 0,85 0,95 1200 25 0,95 M_E2m/46u FP35R12KT4_B15 1200 35 data on request data on request data on request M_E2a/44FP50R12KT4 1200 50 0,54 1,85 1600 80 0,85 1,05 1200 25 0,95 M_E2m/46FP75R12KT4 1200 75 0,39 1,85 1600 140 0,65 1,15 1200 50 0,54 M_E3j/48u FP75R12KT4_B15 1200 75 data on request data on request data on request M_E3a/47FP100R12KT4 1200 100 0,29 1,75 1600 150 0,40 1,00 1200 50 0,54 M_E3j/48IGBT 4 PressFITFP35R12KT4_B11 1200 35 0,72 1,85 1600 80 0,85 0,95 1200 25 0,95 M_E2h/45FP50R12KT4_B11 1200 50 0,54 1,85 1600 80 0,85 1,05 1200 25 0,95 M_E2h/45FP75R12KT4_B11 1200 75 0,39 1,85 1600 140 0,65 1,15 1200 50 0,54 M_E3f/47FP100R12KT4_B11 1200 100 0,29 1,75 1600 150 0,40 1,00 1200 50 0,54 M_E3f/47IGBTSCR/Diode ModulesPresspacks■ Not for new design...B_11 PressFIT Modulesu New type..._B15 module alternative mechnically compatible to an IGBT 3 moduleExplanationsStacks13
IGBT Low Power ModulesEconoPACKExplanationsStacksPresspacksSCR/Diode ModulesIGBT600 V CESType V CES I C V CEsat P tot R thJC Outline/V A V W K/W pageT vj = 25°C≤typ.IGBT 2 Standard■ BSM20GD60DLC 600 20 1,95 125 1,00 M_E2d/44■ BSM20GD60DLCE3224 600 20 1,95 125 1,00 M_E2c/44■ BSM30GD60DLC 600 30 1,95 135 0,90 M_E2d/44■ BSM30GD60DLCE3224 600 30 1,95 135 0,90 M_E2d/44■ BSM50GD60DLC 600 50 1,95 250 0,50 M_E2c/44■ BSM50GD60DLCE3226 600 50 1,95 250 0,50 M_E2d/44■ BSM75GD60DLC 600 75 1,95 330 0,37 M_E2c/44■ BSM100GD60DLC 600 100 1,95 430 0,29 M_E3c/47■ BSM150GD60DLC 600 150 1,95 570 0,22 M_E3c/47SixPACK ■ BSM200GD60DLC 600 200 1,95 700 0,18 M_E3c/47IGBT 3FS50R06KE3 600 50 1,45 190 0,80 M_E2b/45FS75R06KE3 600 75 1,45 250 0,60 M_E2b/45FS100R06KE3 600 100 1,45 335 0,45 M_E3b/47FS150R06KE3 600 150 1,45 430 0,35 M_E3b/47SixPACK FS200R06KE3 600 200 1,45 600 0,25 M_E3b/47IGBT 2 Standard■ F4-100R06KL4 600 100 1,95 430 0,29 M_E2e/45■ F4-150R06KL4 600 150 1,95 570 0,22 M_E2e/45FourPACK ■ F4-200R06KL4 600 200 1,95 700 0,18 M_E3d/471200 V CESType V CES I C V CEsat P tot R thJC Outline/V A V W K/W pageT vj = 25°C≤typ.IGBT 2 Standard■ BSM10GD120DN2 1200 10 2,70 80 1,520 M_E2d/44■ BSM10GD120DN2E3224 1200 10 2,70 80 1,520 M_E2c/44■ BSM15GD120DN2 1200 15 2,50 145 0,860 M_E2d/44■ BSM15GD120DN2E3224 1200 15 2,50 145 0,860 M_E2c/44■ BSM25GD120DN2 1200 25 2,50 200 0,600 M_E2d/44■ BSM25GD120DN2E3224 1200 25 2,50 200 0,600 M_E2c/44■ BSM35GD120DN2 1200 35 2,70 280 0,440 M_E2d/44■ BSM35GD120DN2E3224 1200 35 2,70 280 0,440 M_E2c/44■ BSM50GD120DN2 1200 50 2,50 350 0,350 M_E2c/44■ BSM50GD120DN2E3226 1200 50 2,50 350 0,350 M_E2d/44■ BSM50GD120DN2G 1200 50 2,50 400 0,350 M_E3c/47■ BSM75GD120DN2 1200 75 2,50 520 0,235 M_E3c/47■ BSM100GD120DN2 1200 100 2,50 680 0,182 M_E3c/47IGBT 2 Low Loss■ BSM15GD120DLCE3224 1200 15 2,10 145 0,860 M_E2c/44■ BSM25GD120DLCE3224 1200 25 2,10 200 0,600 M_E2c/44■ BSM35GD120DLCE3224 1200 35 2,10 280 0,440 M_E2c/44■ BSM50GD120DLC 1200 50 2,10 350 0,350 M_E2c/44■ BSM75GD120DLC 1200 75 2,10 500 0,250 M_E3c/47SixPACK ■ BSM100GD120DLC 1200 100 2,10 650 0,190 M_E3c/47■ Not for new design14
IGBT Low Power ModulesEconoPACK1200 V CESType V CES I C V CEsat P tot R thJC Outline/V A V W K/W pageT vj = 25°C≤typ.IGBT 3FS25R12KE3G 1200 25 1,70 145 0,86 M_E2b/45FS35R12KE3G 1200 35 1,70 200 0,60 M_E2b/45FS50R12KE3 1200 50 1,70 270 0,45 M_E2b/45FS75R12KE3 1200 75 1,70 350 0,35 M_E2b/45FS75R12KE3G 1200 75 1,70 350 0,35 M_E3b/47FS100R12KE3 1200 100 1,70 480 0,26 M_E3b/47SixPACK FS150R12KE3 1200 150 1,70 700 0,18 M_E3b/47IGBT 2 FastFS75R12KS4 1200 75 3,20 500 0,25 M_E3c/47SixPACK FS100R12KS4 1200 100 3,20 660 0,19 M_E3c/47IGBT 3 FastFS25R12KT3 1200 25 1,70 145 0,86 M_E2b/45FS35R12KT3 1200 35 1,70 210 0,60 M_E2b/45FS50R12KT3 1200 50 1,70 280 0,45 M_E2b/45FS75R12KT3 1200 75 1,70 355 0,35 M_E2b/45FS75R12KT3G 1200 75 1,70 355 0,35 M_E3b/47FS100R12KT3 1200 100 1,70 480 0,26 M_E3b/47FS150R12KT3 1200 150 1,70 700 0,18 M_E3b/47IGBT 4u FS50R12KT4_B15 1200 50 data on request data on request data on request M_E2b/45u FS75R12KT4_B15 1200 75 data on request data on request data on request M_E2b/45FS100R12KT4G 1200 100 1,75 515 0,29 M_E3b/47FS150R12KT4 1200 150 1,75 750 0,20 M_E3b/47IGBT 4 PressFITu FS50R12KT4_B11 1200 50 data on request data on request data on request M_E2k/46u FS75R12KT4_B11 1200 75 data on request data on request data on request M_E2k/46FS100R12KT4G_B11 1200 100 1,75 515 0,29 M_E3e/47SixPACK FS150R12KT4_B11 1200 150 1,75 750 0,20 M_E3e/47IGBT 4u FS100R12KT4 1200 100 data on request data on request data on request M_E2i/46IGBT 4 PressFITSixPACK u FS100R12KT4_B11 1200 100 data on request data on request data on request M_E2j/46IGBT 3SixPACKFor Active Front-EndApplicationsIGBT 3SixPACKwith Shunt■ Not for new designu FS75R12KE3_B9 1200 75 1,70 355 0,35 M_E2l/46■ FS75R12KE3_B3 1200 75 1,70 355 0,35 M_E3g/48■ FS100R12KE3_B3 1200 100 1,70 480 0,26 M_E3g/48u New typeExplanationsStacksPresspacksSCR/Diode ModulesIGBT15
IGBT Low Power ModulesEconoPACKIGBTSCR/Diode ModulesTriPACK highwith shunt1200 V CESType V CES I C V CEsat P tot R thJC Outline/V A V W K/W pageT vj = 25°C≤typ.IGBT 3■ FT150R12KE3G_B4 1200 150 1,70 700 0,18 M_E3h/45■ FT150R12KE3_B5 1200 150 1,70 700 0,18 M_E2f/45TriPACK lowIGBT 2 FastF4-25R12NS4 1200 25 3,20 210 0,60 M_E1c/44F4-35R12NS4 1200 35 3,40 250 0,50 M_E1c/44F4-50R12KS4 1200 50 3,20 355 0,35 M_E2e/45F4-75R12KS4 1200 75 3,20 500 0,25 M_E2e/45F4-100R12KS4 1200 100 3,20 660 0,19 M_E3d/47FourPACK F4-150R12KS4 1200 150 3,20 960 0,13 M_E3d/47Presspacks1700 V CESType V CES I C V CEsat P tot R thJC Outline/V A V W K/W pageT vj = 25°C≤typ.IGBT 2 Low Loss■ BSM50GD170DL 1700 50 2,70 480 0,260 M_E3c/47IGBT 3FS50R17KE3_B17 1700 50 2,00 345 0,360 M_E2g/453-Phase- FS75R17KE3 1700 75 2,00 465 0,270 M_E3b/47Full-Bridges FS100R17KE3 1700 100 2,00 555 0,225 M_E3b/47■ Not for new designExplanationsStacks16
Medium PowerModulesPresspacksStacksExplanationsSCR/Diode ModulesIGBTFlexibility, optimal electrical performance, highest reliability.Here are the keywords for a successful inverter design. The 34 and 62 mmstandard IGBT as well as the EconoPACK+ and EconoDUAL modules are theright choice for your design.Our well known 34 mm and 62 mm standard IGBT modules areavailable in various configurations like Single Switch, Half Bridge-, Chopperand Diode modules. Besides the standard Planar IGBT chip technology for lowswitching losses, saturation voltage and high switching frequency, the 62mmmodules are also available with the optimized IGBT 3 KE3 Trench with FieldStop or with the fast IGBT 3 KT3 for higher switching frequency. The power rangecovers current ranges from I C 50 A up to 800 A at 600 V/1200 V/1700 VThe EconoPACK+ and EconoDUAL modules combine 17 mm heightand leading edge IGBT technology for highest power density and inverterapplications in the power range from 20 kVA to 200 kVA and above. A key issuefor parallel operation is the symmetrical design of the module, resulting in anoptimized current sharing on the IGBT legs. This concept allows to create oneinverter design for all line voltages up to 690 V AC. The EconoPACK + andEconoDUAL product lines offer the complete current range from I C 50 A up to450 A at 1200 V/1700 V.17
IGBT Medium Power Modules34 mm and 62 mm ModulesIGBTSCR/Diode Modules600 V – TypeType V CES I C V CEsat P tot R thJC Outline/V A V W K/W pageT vj = 25°C≤typ.IGBT 2 Low LossBSM50GB60DLC 600 50 1,95 280 0,44 M_34a/49BSM75GB60DLC 600 75 1,95 355 0,35 M_34a/49BSM100GB60DLC 600 100 1,95 445 0,28 M_34a/49BSM150GB60DLC 600 150 1,95 595 0,21 M_34a/49BSM200GB60DLC 600 200 1,95 730 0,17 M_34a/49BSM300GB60DLC 600 300 1,95 1250 0,1 M_62a/49IGBT 3FF200R06KE3 600 200 1,45 680 0,22 M_62a/49FF300R06KE3 600 300 1,45 940 0,16 M_62a/49Dual Modules FF400R06KE3 600 400 1,45 1250 0,12 M_62a/49IGBT 3GAL Chopper FD300R06KE3 600 300 1,45 640 0,16 M_62a/49PresspacksStacksExplanations1200 V – TypeType V CES I C V CEsat P tot R thJC Outline/V A V W K/W pageT vj = 25°C≤typ.IGBT 2 StandardBSM35GB120DN2 1200 35 2,70 280 0,440 M_34a/49BSM50GB120DN2 1200 50 2,50 400 0,300 M_34a/49BSM75GB120DN2 1200 75 2,50 625 0,200 M_34a/49BSM100GB120DN2K 1200 100 2,50 700 0,180 M_34a/49BSM100GB120DN2 1200 100 2,50 800 0,160 M_62a/49BSM150GB120DN2 1200 150 2,50 1250 0,100 M_62a/49BSM200GB120DN2 1200 200 2,50 1400 0,090 M_62a/49IGBT 2 Low LossBSM50GB120DLC 1200 50 2,10 460 0,270 M_34a/49BSM75GB120DLC 1200 75 2,10 690 0,180 M_34a/49BSM100GB120DLCK 1200 100 2,10 830 0,150 M_34a/49BSM100GB120DLC 1200 100 2,10 780 0,160 M_62a/49BSM150GB120DLC 1200 150 2,10 1200 0,100 M_62a/49BSM200GB120DLC 1200 200 2,10 1300 0,080 M_62a/49BSM300GB120DLC 1200 300 2,10 2500 0,050 M_62a/49IGBT 3FF150R12KE3G 1200 150 1,70 780 0,160 M_62a/49FF200R12KE3 1200 200 1,70 1040 0,120 M_62a/49FF300R12KE3 1200 300 1,70 1450 0,085 M_62a/49FF400R12KE3 1200 400 1,70 2000 0,062 M_62a/49IGBT 3 FastFF150R12KT3G 1200 150 1,70 780 0,160 M_62a/49FF200R12KT3 1200 200 1,70 1050 0,120 M_62a/49FF300R12KT3 1200 300 1,70 1450 0,085 M_62a/49Dual Modules FF400R12KT3 1200 400 1,70 2000 0,062 M_62a/4918
IGBT Medium Power Modules34 mm and 62 mm Modules1200 V – TypeType V CES I C V CEsat P tot R thJC Outline/V A V W K/W pageT vj = 25°C≤typ.IGBT 4u FF200R12KE4 1200 200 1,75 1100 0,135 M_62a/49u FF300R12KE4 1200 300 1,75 1600 0,093 M_62a/49u FF450R12KE4 1200 450 1,75 2400 0,062 M_62a/49u FF200R12KT4 1200 200 1,75 1100 0,135 M_62a/49u FF300R12KT4 1200 300 1,75 1600 0,093 M_62a/49Dual Modules u FF450R12KT4 1200 450 1,75 2400 0,062 M_62a/49IGBT 2 FastFF100R12KS4 1200 100 3,20 780 0,160 M_62a/49FF150R12KS4 1200 150 3,20 1200 0,100 M_62a/49FF200R12KS4 1200 200 3,20 1400 0,090 M_62a/49Dual Modules FF300R12KS4 1200 300 3,20 1950 0,060 M_62a/49IGBT 2 StandardBSM50GAL120DN2 1200 50 2,50 400 0,300 M_34a/49BSM75GAL120DN2 1200 75 2,50 625 0,200 M_34a/49BSM100GAL120DN2 1200 100 2,50 800 0,160 M_62a/49BSM150GAL120DN2 1200 150 2,50 1250 0,100 M_62a/49BSM200GAL120DN2 1200 200 2,50 1400 0,090 M_62a/49IGBT 2 Low LossBSM100GAL120DLCK 1200 100 2,10 830 0,150 M_34a/49BSM150GAL120DLC 1200 150 2,10 1200 0,100 M_62a/49BSM200GAL120DLC 1200 200 2,10 1300 0,090 M_62a/49BSM300GAL120DLC 1200 300 2,10 2500 0,050 M_62a/49IGBT 2 FastFD300R12KS4 1200 300 3,20 1950 0,060 M_62a/49IGBT 3FD200R12KE3 1200 200 1,70 1040 0,120 M_62a/49FD300R12KE3 1200 300 1,70 1450 0,085 M_62a/49GAL Chopper FD400R12KE3 1200 400 1,70 2000 0,062 M_62a/49IGBT 2 StandardBSM75GAR120DN2 1200 75 2,50 625 0,200 M_34a/49BSM100GAR120DN2 1200 100 2,50 800 0,160 M_62a/49BSM200GAR120DN2 1200 200 2,50 1400 0,090 M_62a/49IGBT 3DF200R12KE3 1200 200 1,70 1040 0,120 M_62a/49DF300R12KE3 1200 300 1,70 1450 0,085 M_62a/49GAR Chopper DF400R12KE3 1200 400 1,70 2000 0,062 M_62a/49IGBT 2 StandardBSM200GA120DN2 1200 200 2,50 1550 0,080 M_62b/49BSM200GA120DN2S 1200 200 2,50 1550 0,080 M_62c/49BSM300GA120DN2 1200 300 2,50 2500 0,050 M_62b/49BSM300GA120DN2S 1200 300 2,50 2500 0,050 M_62c/49BSM400GA120DN2 1200 400 2,50 2700 0,045 M_62b/49Single Switches BSM400GA120DN2S 1200 400 2,50 2700 0,045 M_62c/49u New typeExplanationsStacksPresspacksSCR/Diode ModulesIGBT19
IGBT Medium Power Modules34 mm and 62 mm ModulesExplanationsStacksPresspacksSCR/Diode ModulesIGBT1200 V – TypeType V CES I C V CEsat P tot R thJC Outline/V A V W K/W pageT vj = 25°C≤typ.IGBT 2 Low LossBSM200GA120DLC 1200 200 2,10 1470 0,090 M_62b/49BSM200GA120DLCS 1200 200 2,10 1470 0,090 M_62c/49BSM300GA120DLC 1200 300 2,10 2270 0,055 M_62b/49BSM300GA120DLCS 1200 300 2,10 2270 0,055 M_62c/49BSM400GA120DLC 1200 400 2,10 2500 0,050 M_62b/49BSM400GA120DLCS 1200 400 2,10 2500 0,050 M_62c/49BSM600GA120DLC 1200 600 2,10 3900 0,032 M_62b/49BSM600GA120DLCS 1200 600 2,10 3900 0,030 M_62c /49IGBT 3FZ300R12KE3G 1200 300 1,70 1450 0,085 M_62b/49FZ300R12KE3_B1G 1200 300 1,70 1450 0,085 M_62c/49FZ400R12KE3 1200 400 1,70 2250 0,055 M_62b/49FZ400R12KE3_B1 1200 400 1,70 2250 0,055 M_62c /49FZ600R12KE3 1200 600 1,70 2750 0,045 M_62b/49FZ600R12KE3_B1 1200 600 1,70 2750 0,045 M_62c/49FZ800R12KE3 1200 800 1,70 3550 0,035 M_62b/49IGBT 2 FastFZ400R12KS4 1200 400 3,20 2500 0,050 M_62b/49Single Switches FZ600R12KS4 1200 600 3,20 3900 0,030 M_62b/491700 V – TypeType V CES I C V CEsat P tot R thJC Outline/V A V W K/W pageT vj = 25°C≤typ.IGBT 2 StandardBSM50GB170DN2 1700 50 3,40 500 0,250 M_34a/49BSM75GB170DN2 1700 75 3,40 625 0,200 M_34a/49BSM100GB170DN2 1700 100 3,40 1000 0,130 M_62a/49BSM150GB170DN2 1700 150 3,40 1250 0,100 M_62a/49IGBT 2 Low LossBSM100GB170DLC 1700 100 2,60 960 0,130 M_62a/49BSM150GB170DLC 1700 150 2,60 1250 0,100 M_62a/49BSM200GB170DLC 1700 200 2,60 1660 0,075 M_62a/49IGBT 3FF200R17KE3 1700 200 2,00 1250 0,100 M_62a/49Dual Modules FF300R17KE3 1700 300 2,00 1470 0,085 M_62a/49IGBT 2 StandardBSM200GA170DN2 1700 200 3,40 1750 0,070 M_62b/49BSM200GA170DN2S 1700 200 3,40 1750 0,070 M_62c/49BSM300GA170DN2 1700 300 3,40 2500 0,050 M_62b/49BSM300GA170DN2S 1700 300 3,40 2500 0,050 M_62c/49IGBT 2 Low LossBSM200GA170DLC 1700 200 2,60 1920 0,065 M_62b/49BSM300GA170DLC 1700 300 2,60 2500 0,050 M_62b/49Single Switches BSM400GA170DLC 1700 400 2,60 3120 0,040 M_62b/4920
IGBT Medium Power Modules34 mm and 62 mm Modules1700 V – TypeType V CES I C V CEsat P tot R thJC Outline/V A V W K/W pageT vj = 25°C≤typ.IGBT 3FZ400R17KE3 1700 400 2 2270 0,055 M_62b/49Single Switches FZ600R17KE3 1700 600 2 3120 0,04 M_62b/49Single DiodesDual DiodesSingle Switcheswith Series Diodeu New typeDiode ModulesType V RRM I C V F Q R R thJC Outline/V A V µAs K/W pageT vj = 25°C Tvj = 125°C ≤typ.typ.BYM300A120DN2 1200 300 2,30 40 0,125 M_62d/49BYM300A170DN2 1700 250 2,30 70 0,170 M_62d/49BYM600A170DN2 1700 400 2,00 100 0,090 M_62d/49DZ800S17KE3 1700 800 1,80 345 0,058 M_62d/49BYM200B170DN2 1700 200 2,20 50 0,150 M_62e/49BYM300B170DN2 1700 300 2,20 75 0,120 M_62e/491200 V – TypeType V CES I C V CEsat P tot R thJC Outline/V A V W K/W pageT vj = 25°C≤typ.u FD400R12KE3_B5 1200 400 1,70 2000 0,062 M_62a/49u FD300R12KS4_B5 1200 300 3,20 1950 0,064 M_62a/49StacksPresspacksSCR/Diode ModulesIGBTExplanations21
IGBT Medium Power ModulesEconoPACK+IGBTSCR/Diode ModulesPresspacks1200 V – TypeType V CES I C V CEsat E on/ E off R thJC Outline/V A V mWs K/W pageT vj = 25°C T vj =125°Ctyp.typ.IGBT 3FS150R12KE3G 1200 150 1,70 11/24 0,180 M_E+a/50FS225R12KE3 1200 225 1,70 15/36 0,110 M_E+a/50FS300R12KE3 1200 300 1,70 22/43 0,085 M_E+a/50FS450R12KE3 1200 450 1,70 33/65 0,060 M_E+a/50IGBT 4u FS225R12KE4 1200 225 1,85 12,5/26,5 0,140 M_E+a/50u FS300R12KE4 1200 300 1,75 17/37,5 0,094 M_E+a/50SixPACK u FS450R12KE4 1200 450 1,75 26/55,5 0,066 M_E+a/501700 V – TypeType V CES I C V CEsat E on/ E off R thJC Outline/V A V mWs K/W pageT vj = 25°C T vj =125°Ctyp.typ.IGBT 3FS150R17KE3G 1700 150 2,00 48/47 0,120 M_E+a/50FS225R17KE3 1700 225 2,00 71,5/70,5 0,090 M_E+a/50FS300R17KE3 1700 300 2,00 95/94 0,075 M_E+a/50FS450R17KE3 1700 450 2,00 140/140 0,055 M_E+a/50IGBT 4u FS225R17KE4 1700 225 data on request data on request data on request M_E+a/50u FS300R17KE4 1700 300 data on request data on request data on request M_E+a/50SixPACK u FS450R17KE4 1700 450 data on request data on request data on request M_E+a/50u New typeExplanationsStacks22
IGBT Medium Power ModulesEconoDUALDual ModulesChopper600 V – TypeType V CES I C V CEsat E on/ E off R thJC Outline/V A V mWs K/W pageT vj = 25°C T vj =125°Ctyp.typ.IGBT 3u FF450R06ME3 600 450 data on request data on request data on request M_ED3/50u FF600R06ME3 600 600 data on request data on request data on request M_ED3/50u FD600R06ME3_S2 600 600 1,30 6,1/17,5 0,055 M_ED3/501200 V – TypeType V CES I C V CEsat E on/ E off R thJC Outline/V A V mWs K/W pageT vj = 25°C T vj =125°Ctyp.typ.IGBT 4 FastFF100R12MT4 1200 100 1,85 9,3/8,3 0,300 M_ED2a/51FF150R12MT4 1200 150 1,85 14/12,5 0,220 M_ED2a/51FF200R12MT4 1200 200 1,75 18,5/16,5 0,140 M_ED2a/51IGBT 3FF150R12ME3G 1200 150 1,70 11/24 0,180 M_ED3/50FF225R12ME3 1200 225 1,70 15/36 0,110 M_ED3/50FF300R12ME3 1200 300 1,70 22/43 0,085 M_ED3/50FF450R12ME3 1200 450 1,70 33/65 0,060 M_ED3/50IGBT 2 FastFF150R12MS4G 1200 150 3,20 14,5/11 0,100 M_ED3/50FF225R12MS4 1200 225 3,20 20/15 0,085 M_ED3/50FF300R12MS4 1200 300 3,20 25/15 0,064 M_ED3/50IGBT 4u FF225R12ME4 1200 225 data on request data on request data on request M_ED3/50u FF300R12ME4 1200 300 data on request data on request data on request M_ED3/50Dual Modules u FF450R12ME4 1200 450 data on request data on request data on request M_ED3/50IGBT 2 FastF4-50R12MS4 1200 50 3,20 6/2,5 0,350 M_ED2b/51F4-75R12MS4 1200 75 3,20 9/3,8 0,250 M_ED2b/51FourPACKStacksPresspacksSCR/Diode ModulesIGBTu New typeExplanations23
IGBT Medium Power ModulesEconoDUALIGBTSCR/Diode Modules1700 V – TypeType V CES I C V CEsat E on/ E off R thJC Outline/V A V mWs K/W pageT vj = 25°C T vj =125°Ctyp.typ.IGBT 3FF150R17ME3G 1700 150 2,00 48/47 0,120 M_ED3/50FF225R17ME3 1700 225 2,00 71,5/70,5 0,090 M_ED3/50FF300R17ME3 1700 300 2,00 95/94 0,075 M_ED3/50FF450R17ME3 1700 450 2,00 140/140 0,055 M_ED3/50IGBT 4u FF225R17ME4 1700 225 data on request data on request data on request M_ED3/50u FF300R17ME4 1700 300 data on request data on request data on request M_ED3/50Dual Modules u FF450R17ME4 1700 450 data on request data on request data on request M_ED3/50u New typeExplanationsStacksPresspacks24
High PowerModulesPresspacksStacksExplanationsSCR/Diode ModulesIGBTThe new PrimePACK IGBT module presents a specially optimizedconcept for integration in modern converters. The most important benefits areimproved thermal properties, low stray inductance, and a wide range of operatingtemperatures. In combination with an advantageous interface to both,driver board and load circuitry, a powerful, compact, and modular converterconcept can be realized.With the introduction of the IHM/IHV housing, we established astandard for high power IGBT modules which was adopted by all well knownmanufacturers and used in countless applications all over the world. Underpermanent load in daily demanding use of transportation applications or inrough environments like industrial inverters and also in wind turbines, theIHM/IHV modules convince with their high reliability and robustness. The IHM/IHV product group covers all possible inverter power sizes as Single switch, HalfBridge-, Chopper and Diode modules in the voltage range from 1200 V up to6500 V and current ratings from I C 200 A up to 3600 A.25
IGBT High Power ModulesPrimePACKIGBTSCR/Diode ModulesPresspacks1200 V – Type 1)Type V CES I C V CEsat E on/ E off R thJC Outline/V A V mWs K/W pageT vj = 25°C Tvj=125°C per armtyp.typ.IGBT 4FF450R12IE4 1200 450 1,75 59/52 0,0590 H_PP2/52FF600R12IE4 1200 600 1,75 61/73 0,0450 H_PP2/52FF600R12IP4 1200 600 1,70 77/105 0,0450 H_PP2/52FF600R12IS4F 1200 600 3,20 20/40 0,034 H_PP2/52FF900R12IE4 1200 900 1,75 70/120 0,0295 H_PP2/52FF900R12IP4 1200 900 1,70 100/160 0,0295 H_PP2/52FF900R12IP4D 1200 900 1,70 100/160 0,0295 H_PP2/52Halfbridge FF1400R12IP4 1200 1400 1,75 80/280 0,0195 H_PP3/521700 V – Type 1)Type V CES I C V CEsat E on/ E off R thJC Outline/V A V mWs K/W pageT vj = 25°C Tvj=125°C per armtyp.typ.IGBT 4FF450R17IE4 1700 450 2,00 180/120 0,054 H_PP2/52FF650R17IE4 1700 650 2,00 300/205 0,036 H_PP2/52Halfbridge FF1000R17IE4 1700 1000 2,00 390/295 0,024 H_PP3/521) valid for all PrimePACK part-no: T vj = 150°C, I CRM = 2xIcExplanationsStacks26
IGBT High Power ModulesIHM Modules1200 V – TypeType*) V CES I C V CEsat E on/ E off R thJC Outline/V A V mWs K/W pageT vj = 25°C Tvj=125°C per armtyp.typ.IGBT 2 StandardFF400R12KF4 1200 400 2,70 70/60 0,046 H_IH2/52FF600R12KF4 1200 600 2,70 90/90 0,032 H_IH2/52FF800R12KF4 1200 800 2,70 130/120 0,025 H_IH2/52IGBT 2 Low LossFF400R12KL4C 1200 400 2,10 72/58 0,0440 H_IH2/52FF600R12KL4C 1200 600 2,10 100/90 0,0320 H_IH2/52FF800R12KL4C 1200 800 2,10 120/130 0,0250 H_IH2/52IGBT 3FF600R12KE3 1200 600 1,70 120/95 0,0440 H_IH2/52FF800R12KE3 1200 800 1,70 160/125 0,0320 H_IH2/52Dual modules FF1200R12KE3 1200 1200 1,70 245/190 0,0250 H_IH2/52IGBT 2 FastFZ800R12KS4_B2 1200 800 3,20 76/58 0,0170 H_IH1/52IGBT 2 StandardFZ800R12KF4 1200 800 2,70 130/120 0,0230 H_IH1/52FZ1050R12KF4 1200 1050 2,70 150/170 0,0180 H_IH1/52FZ1200R12KF4 1200 1200 2,70 170/190 0,0160 H_IH1/52FZ1600R12KF4 1200 1600 2,70 220/290 0,0125 H_IH1/52FZ1800R12KF4 1200 1800 2,70 250/330 0,0110 H_IH7/53FZ2400R12KF4 1200 2400 2,70 310/410 0,0084 H_IH7/53IGBT 2 Low LossFZ800R12KL4C 1200 800 2,10 121/127 0,0220 H_IH1/52FZ1200R12KL4C 1200 1200 2,10 165/195 0,0160 H_IH1/52FZ1600R12KL4C 1200 1600 2,10 210/260 0,0125 H_IH1/52FZ1800R12KL4C 1200 1800 2,10 230/295 0,0110 H_IH7/53FZ2400R12KL4C 1200 2400 2,10 320/400 0,0084 H_IH7/53IGBT 3FZ1200R12KE3 1200 1200 1,70 245/190 0,0220 H_IH4/52FZ1600R12KE3 1200 1600 1,70 325/250 0,0160 H_IH4/52FZ2400R12KE3 1200 2400 1,70 490/380 0,0125 H_IH4/52FZ2400R12KE3_B9 1200 2400 1,70 490/380 0,0110 H_IH7/53Single modules FZ3600R12KE3 1200 3600 1,70 735/570 0,0080 H_IH7/53IGBT 4 IHM-B Housingu FZ1200R12HP4 1200 1200 1,70 155/265 0,0240 H_IH4B/52u FZ1600R12HP4 1200 1600 1,70 250/370 0,0180 H_IH4B/52u FZ1800R12HP4_B9 1200 1800 1,70 330/405 0,0160 H_IH7B/52u FZ2400R12HP4 1200 2400 1,70 460/560 0,0130 H_IH4B/52u FZ2400R12HP4_B9 1200 2400 1,70 460/560 0,0125 H_IH7B/53Single modules u FZ3600R12HP4 1200 3600 1,70 595/895 0,00925 H_IH7B/53IGBT 2 Standard■ FS300R12KF4 1200 300 2,70 80/45 0,0640 H_IH8/53Six pack modules ■ FS400R12KF4 1200 400 2,70 100/55 0,0500 H_IH8/53IGBT 2 StandardFD600R12KF4 1200 600 2,70 90/90 0,0320 H_IH2/52Chopper modulesIGBT 2 FastF4-400R12KS4_B2 1200 400 3,20 38/29 0,0420 H_IH5/53FourPACK ModulesExplanationsStacksPresspacksSCR/Diode ModulesIGBTu New type ■ Not for new design *) valid for all part-no: T vj = 125°C, I CRM = 2xlC..._B2: Traction Module (AlSiC) All modules are UL recognized27
IGBT High Power ModulesIHM ModulesStacksPresspacksSCR/Diode ModulesIGBT1600 + 1700 V-TypeType*) V CES I C V CEsat E on/ E off R thJC Outline/V A V mWs K/W pageT vj = 25°C Tvj=125°C per armtyp.typ.IGBT 1 StandardFF400R16KF4 1600 400 3,30 170/90 0,040 H_IH2/52FF600R16KF4 1600 600 3,50 240/140 0,032 H_IH2/52IGBT 3FF600R17KE3 1700 600 2,00 185/210 0,034 52H_IH2/52FF800R17KE3 1700 800 2,00 240/280 0,028 H_IH2/52Dual modules FF1200R17KE3 1700 1200 2,00 350/445 0,021 H_IH2/52IGBT 1 StandardFZ800R16KF4 1600 800 3,30 340/180 0,020 H_IH1/52FZ1200R16KF4 1600 1200 3,50 490/290 0,016 H_IH1/52FZ1800R16KF4 1600 1800 3,50 750/450 0,011 H_IH7/53IGBT 3FZ1200R17KE3 1700 1200 2,00 345/430 0,017 H_IH4/52IH1/IH4 FZ1600R17KE3 1700 1600 2,00 440/585 0,014 H_IH4/52IH7 FZ2400R17KE3 1700 2400 2,00 590/910 0,010 H_IH4/52FZ2400R17KE3_B9 1700 2400 2,00 610/920 0,009 H_IH7/53FZ3600R17KE3 1700 3600 2,00 745/1450 0,007 H_IH7/53IGBT 4 IHM B Housingu FZ1200R17HP4 1700 1200 data on request data on request data on request H_IH4B/52u FZ1600R17HP4 1700 1600 data on request data on request data on request H_IH4B/52u FZ1800R17HP4_B9) 1700 1800 data on request data on request data on request H_IH7B/53u FZ2400R17HP4 1700 2400 data on request data on request data on request H_IH4B/52u FZ2400R17HP4_B9 2400 data on request data on request data on request H_IH7B/53u FZ3600R17HP4 1700 3600 data on request data on request data on request H_IH7B/53IGBT 1 StandardSixPACK Modules ■ FS300R16KF4 1600 300 3,50 120/70 0,064 H_IH8/53IGBT 1 StandardFD400R16KF4 1600 400 3,30 170/90 0,040 H_IH2/52FD600R16KF4 1600 600 3,50 240/140 0,032 H_IH2/52FD… IGBT 3FD1200R17KE3-K 1700 1200 2,00 350/445 0,021 H_IH4/52FD…-KChopper modulesu New type ■ Not for new design *) valid for all part-no: T vj = 125°C, I CRM = 2xlC..._B2: Traction Module (AlSiC) All modules are UL recognizedExplanations28
IGBT High Power ModulesIHM Modules1700 V-TypeType*) V CES I C V CEsat E on/ E off R thJC Outline/V A V mWs K/W pageT vj = 25°C Tvj=125°C per armtyp.typ.IGBT 2 Low LossFF400R17KF6C_B2 1700 400 2,60 180/150 0,016 H_IH2/52FF401R17KF6C_B2 1700 400 2,60 190/150 0,040 H_IH9/53FF600R17KF6C_B2 1700 600 2,60 270/220 0,026 H_IH2/52FF800R17KF6C_B2 1700 800 2,60 290/335 0,020 H_IH2/52IGBT 3FF400R17KE3_B2 1700 400 2,00 125/145 0,049 H_IH9/53FF600R17KE3_B2 1700 600 2,00 185/220 0,029 H_IH2/52FF800R17KE3_B2 1700 800 2,00 240/295 0,024 H_IH2/52Dual modules FF1200R17KE3_B2 1700 1200 2,00 350/445 0,019 H_IH2/52IGBT 2 Low LossFZ800R17KF6C_B2 1700 800 2,60 300/325 0,020 H_IH1/52FZ1200R17KF6C_B2 1700 1200 2,60 330/480 0,013 H_IH1/52FZ1600R17KF6C_B2 1700 1600 2,60 430/670 0,010 H_IH1/52FZ1800R17KF6C_B2 1700 1800 2,60 570/725 0,009 H_IH7/53FZ2400R17KF6C_B2 1700 2400 2,60 750/1060 0,007 H_IH7/53IGBT 3FZ1200R17KE3_B2 1700 1200 2,00 350/445 0,014 H_IH4/52FZ1600R17KE3_B2 1700 1600 2,00 445/600 0,012 H_IH4/52FZ1800R17KE3_B2 1700 1800 2,00 490/680 0,010 H_IH7/53FZ2400R17KE3_B2 1700 2400 2,00 610/920 0,008 H_IH7/53FZ3600R17KE3_B2 1700 3600 2,00 790/1450 H_IH7/53IGBT 4 IHM B Housingu FZ1200R17HP4_B2 1700 1200 data on request data on request data on request H_IH4B/52u FZ1600R17HP4_B2 1700 1600 data on request data on request data on request H_IH4B/52u FZ1800R17HP4_B2 1700 1800 data on request data on request data on request H_IH7B/53u FZ2400R17HP4_B2 1700 2400 data on request data on request data on request H_IH7B/53Single modules u FZ3600R17HP4_B2 1700 3600 data on request data on request data on request H_IH7B/53IGBT 2 Low LossFD401R17KF6C_B2 1700 400 2,60 190/150 0,040 H_IH9/53FD600R17KF6C_B2 1700 600 2,60 270/220 0,026 H_IH2/52FD… FD800R17KF6C_B2 1700 800 2,60 290/335 0,020 H_IH2/52FD1600/1200R17KF6C_B2 1700 1600 2,60 430/670 0,010 H_IH7/53IGBT 3FD…-K FD600R17KE3_B2 1700 600 2,00 185/220 0,029 H_IH2/52FD800R17KE3_B2 1700 800 2,00 240/295 0,024 H_IH2/52Chopper modules FD1200R17KE3-K_B2 1700 1200 2,00 350/445 0,019 H_IH4/52StacksPresspacksSCR/Diode ModulesIGBTu New type..._B2: Traction Module (AlSiC)*) valid for all part-no: T vj = 125°C, I CRM = 2xlCAll modules are UL recognizedExplanations29
IGBT High Power ModulesIHV ModulesIGBT3300 V CESType*) V CES I C V CEsat E on/ E off R thJC Outline/V A V mWs K/W pageSCR/Diode ModulesPresspacksStandardFF200R33KF2C 3300 200 3,40 365 /255 0,0570 H_IH9/53Dual modules FF400R33KF2C 3300 400 3,40 730 /510 0,0260 H_IH6/53IGBT 2 StandardFZ800R33KF2C 3300 800 3,40 1450/1000 0,0130 H_IH4/52IH4 FZ1200R33KF2C 3300 1200 3,40 2200/1550 0,0085 H_IH7/53IGBT 2 Low LossFZ800R33KL2C 3300 800 3,00 2250/1250 0,0130 H_IH4/52FZ1200R33KL2C 3300 1200 3,00 3150/1900 0,0850 H_IH7/53IH7 High InsulationFZ400R33KL2C_B5 3300 400 3,00 1200/600 0,0260 H_IH10/54FZ800R33KL2C_B5 3300 800 3,00 2250/1250 0,0130 H_IH11/54Single modules FZ1200R33KL2C_B5 3300 1200 3,00 3150/1900 0,0085 H_IH12/54IGBT 2 StandardFD400R33KF2C 3300 400 3,40 730/510 0,0260 H_IH4/52FD… FD800R33KF2C 3300 800 3,40 1450/1000 0,0130 H_IH7/53IGBT 2 StandardFD400R33KF2C-K 3300 400 3,40 730/510 0,0260 H_IH4/52FD800R33KF2C-K 3300 800 3,40 1450/1000 0,0130 H_IH4/52FD…-K High InsulationChopper modules FD800R33KL2C-K_B5 3300 800 3,40 2250/1250 0,0130 H_IH12/54IH4B IGBT 3u FZ1000R33HE3 3300 1000 2,55 1700/1400 0,0085 H_IH4B/52u FZ1500R33HE3 3300 1500 2,55 2550/2100 0,0130 H_IH7B/52IH7B u FZ1000R33HL3 3300 1000 2,40 2150/1950 0,0130 H_IH4B/52Single modules u FZ1500R33HL3 3300 1500 2,40 3200/2950 0,0085 H_IH7B/53StacksExplanations6500 V CESType*) V CES I C V CEsat E on/ E off R thJC Outline/V A V mWs K/W pageIGBT 1 StandardFZ200R65KF1/KF2 6500 200 4,30 1900/1200 0,033 H_IH10/54FZ400R65KF1/KF2 6500 400 4,30 4000/2300 0,017 H_IH11/54FZ600R65KF1/KF2 6500 600 4,30 5900/3500 0,011 H_IH12/54IGBT 3Single modules u FZ750R65KE3 6500 750 3,00 t.b.d. 0,090 H_IH12/54IGBT 1 StandardFD200R65KF2-K 6500 200 4,30 1900/1200 0,033 H_IH11/54FD400R65KF2-K 6500 400 4,30 4000/2300 0,017 H_IH12/54Chopper modulesu New type..._B5: 6.5kV housing / 10.2kV insulation*) valid for all part-no: T vj = 125°C, I CRM = 2xl CAll modules are UL recognized30
IGBT High Power ModulesDiode ModulesDiode ModulesType*) V RRM I F Q r R thJC Outline/V A µAs K/W pagetyp.per armStandardDD400S16K4 1600 400 40 0,1000 H_IH1/52DD600S16K4 1600 600 60 0,0800 H_IH1/52DD400S17K6C_B2 1700 400 145 0,0160 H_IH1/52DD800S17K6C_B2 1700 800 265 0,0340 H_IH1/52DZ2400S17K6C_B2 1700 2400 750 0,0120 H_IH7/53DD600S17K3_B2 1700 600 260 0,0510 H_IH4/52DD800S17K3_B2 1700 800 345 0,0430 H_IH4/52DZ3600S17K3_B2 1700 3600 1450 0,0140 H_IH7/53StandardDD200S33K2C 3300 200 220 0,1080 H_IH9/54DD400S33K2C 3300 400 440 0,0510 H_IH4/52DD800S33K2C 3300 800 900 0,0250 H_IH4/52DD1200S33K2C 3300 1200 1300 0,0170 H_IH4/52Low LossDD400S33KL2C 3300 400 480 0,0540 H_IH9/53DD1200S33KL2C_B5 3300 1200 1450 0,0170 H_IH11/543. gen.Diode Modules u DD1000S33HE3 3300 1000 900 0,0235 H_IH4B/52StandardDD200S65K2 6500 200 350 0,0630 H_IH11/54DD400S65K2 6500 400 700 0,0320 H_IH11/54Diode Modules DD600S65K2 6500 600 1050 0,0210 H_IH11/54IGBTSCR/Diode ModulesPresspacksu New type*) valid for all part-no: T vj = 125°C, I CRM = 2xl C..._B5: 6.5kV housing / 10.2kV insulationExplanationsStacks31
StacksPresspacksSCR/Diode ModulesIGBTEiceDRIVER ICsDatasheets available under www.infineon.com/gatedriverTechnical Features 1ED020I12-Fn Single Channel isolated IGBT Drivern For 600 V / 1200 V IGBTsn 2 A rail-to-rail outputn V CEsat -detectionn Active Miller ClampEiceDRIVER Boards2ED300C17-S60,5 mm28 mmTM72 mmType Isolation Channels IGBT max Input Driver IOUT Typ. Solder Outline /Technology V CE Logic Supply A Deadtime Temp.* pageV Level Voltage HS - LSV1ED020I12-F2ED020I12-FICorelessTransformerCorelessTransformerTechnical Features 2ED020I12-FIn Matched propagation delay for bothchannelsn Floating channel designed for directsupply and bootstrap operationn Tolerant to negative transient voltagen Undervoltage lockout for both channelsn 3.3 V and 5 V TTL compatible inputsn CMOS Schmitt-triggered inputs withpull-downn Non-inverting inputsn Interlocking inputsn Dedicated shutdown input with pull-up* Datasheets available under www.infineon.com/powersemiconductors1 1200 V CMOS (5 V) 0/+15 or-8/+152 1200 V TTL/ CMOS(5 V)6ED003L06-F Thin-film SOI 6 600 V TTL/ CMOS(5 V)+2/-2 n.a. 260°C PG-DSO-16/57MSL3RoHS-compliant0/+18 +1/-2 No 260°C PG-DSO-18/560/+17,5 typ.+0,15/-0,44* according to JEDEC-standard J-STD-020CMSL3RoHS-compliant325 ns 260°C PG-DSO-28/58Technical Features 6ED003L06-Fn Insensitivity of the bridge output to negativetransient voltages down to -50V as aresult of SOI technologyn Power supply of the high-side drivers viabootstrapn CMOS- and LSTTL-compatible input(inverted logic)n Signal interlocking of every phase toprevent cross-conductionn Overcurrent protectionn Undervoltage lockoutn ”Shutdown” of all switches during errorconditionsn Programmable restart after overcurrentdetectionType Channels Control IGBT max V ISO I GM I OUT size mounting for Outline/Interface V CE V A A mm·mm by modules pageV2ED300C17-S 2 E 1700 * ±30 7 60,5 - 72 soldering EconoPACK 55+, 62 mm, IHM,EconoDUAL,PrimePACK2ED300C17-ST 2 E 1700 * ±30 7 60,5 - 72 soldering EconoPACK+, 62 mm, IHM,EconoDUAL,PrimePACK55MSL3RoHS-compliantExplanationsTechnical features 2ED300C17-S /2ED300C17-STn Failure outputn Half-bridge – or direct mode can be adjustedn Interlocking against each other and deadtime generation in half-bridge moden Low-resistance and therefore noiseimmune15V PWM signal inputn +15V signal processing (15V logic)n Minimum pulse suppression 400nsn Reset input and PWM resetn Dynamic over-current detection (DOCD)by monitoring the saturation voltagen “Soft shutdown” in case of failureshutdownn External detected failure analysis (EDFA)n ± 15 V logic (high noise immunity)n Additional ±16V supply outputsn 2ED300C17-ST:temperature range -40°C/85°Cn 2ED300C17-S:temperature range -25°C/85°C32
EvaluationDriver andAdapter BoardsIGBTSCR/Diode ModulesInfineons evaluation boards have been designed in several configurations todrive IGBT modules. These boards are using specially designed transformers for drivinghigh voltage modules as well as coreless driver IC‘s like the 1ED020I12-F from Infineon.In most cases the power portion is included and some of the boards are handling discreteIGBT‘s as well.PresspacksEvaluation and Reference boards IC & Module Selection ChartIHMEDE-SFOPrimePACKEDE-SFOMAEEDE-SEconoDUALMAEEDE-FEDE-FStacksEconoPACK+EDE-FEconoPIMEasyPIMBD-IGBTEDE-FIEDE-FI-WEDE-FI-TSEiceDRIVEREDC-SED (CLT chip) ED (CLT chip) OptocopplerExplanations33
Evaluation boardsIGBTSCR/Diode ModulesPresspacksName of Components/ Description contendEvaluation Board or Promotion ofReference Design6ED100E12-F EconoPACK+ n Plug & Play Power portionEiceDRIVER n SMPS included not included1ED020I12-Fn Driver Stagen Independent channelsn Suitable for 600V & 1200V2ED100E12-F2 EconoDUAL3 n Plug & Play Power portionEiceDRIVER n SMPS included not included1ED020I12-Fn Driver Stagen Independent channelsn Suitable for 600V & 1200V2ED100E12-F EconoDUAL3 n Optocoppler Power portionn Plug & Playnot includedn SMPS includedn Driver Stageno Infineon drivern Independent channelsincorporatedn Suitable for 600V & 1200V7ED020E12-FI-TS2 IGBT4 Discrete n Designed for Discrete IGBT Power portion &IKW40N120T2 n Designed with 2ED020I12-FI heatsink includedµC XE164 n On board SMPS & uCEiceDRIVER2ED020I12-FI7ED020E12-FI-W2 EasyPIM 2B n Designed for Easy PressFIT Power portionFP35R12W2T4 n Designed with 2ED020I12-FI included2ED020I12-Fl2ED250E12-F PrimePACK 1200V n Evaluation Driver Board for Power portionEiceDRIVER 1200V PrimePACK modules not includedMA300E17 PrimePACK n PrimePACK - Adapter Board Power portionAdapter Board for 1700V modules not includedStacksMA300E12 PrimePACK n PrimePACK - Adapter Board Power portionAdapter Board for 1200V modules not includedExplanations34
Adapter BoardsName of Components/ Description contendEvaluation Board or Promotion ofReference Design2ED300E17-SFO Adapter Board n Evaluation Board for Driver 2ED300C17-Sfor 2ED300C17-S 2ED300C17-S with fiber optic is not includedinterfaceIGBTMA300Kit PrimePACK n Flexible Driver Starter Kit for Power portionParalleling easy PrimePACK module not includedIncluding: 1200V/1700V testingMA300E12 or(PrimePACKMA300E17Adapter Board2ED300E17-SFO 1200V/1700V)2ED300C17-S2ED300C17-S2ED300E17-S Adapter Board n Dual Evaluation Board for Driver 2ED300C17-Sfor 2ED300C17-S IGBT 2ED300C17-S is not included(EiceDRIVER)SCR/Diode ModulesDemoboardsName of Components/ Description contendEvaluation Board or Promotion ofReference DesignPresspacks6ED003E06-F EiceDRIVER n 3 phase high and low side power portion6ED003L06-F IGBT gate driver IC for & HS includedDiscrete IGBT inverter applications, 600VExplanationsStacks35
OutlinesEasyPIM750L_750aEasyPACK750L_750bPresspacksExplanationsStacksSCR/Diode ModulesIGBTEasyPACK750L_750cEasyPACK750L_750f36
EasyPIM1 L_1a EasyPACK1 L_1bExplanationsStacksPresspacksSCR/Diode ModulesIGBT37
EasyPIM1BL_B1aInfineonPresspacksIGBTSCR/Diode ModulesEasyPIM 1BϑL_B1bInfineonϑStacksEasyPIM1BL_B1cInfineonExplanationsϑ38
EasyPIM1BL_B1eInfineonSCR/Diode ModulesExplanationsStacksPresspacksIGBTEasyPIM1BϑL_B1fInfineonϑ39
EasyPIM1BL_B2aInfineonExplanationsStacksPresspacksSCR/Diode ModulesIGBTϑ40
EasyPIM2L_2aEasyPIM2L_2bPresspacksExplanationsStacksSCR/Diode ModulesIGBTEasyPIM2L_2cEasyPIM2L_2d41
EasyPIM2L_2eEasyPIM2L_2fPresspacksExplanationsStacksSCR/Diode ModulesIGBTEasyPACK2L_2gEasyPACK2L_2h42
EasyPACK2L_2jExplanationsStacksPresspacksSCR/Diode ModulesIGBT43
EconoPIM1M_E1aEconoPACK1 BM_E1bPresspacksIGBTSCR/Diode ModulesϑEconoPACK 1B FourPACK M_E1c EconoPACK2 A (shortpin) M_E2cϑϑStacksEconoPACK2 A (longpin)M_E2dEconoPIM2M_E2aExplanationscopperplasticϑ44
EconoPACK2 BM_E2bEconoPACK2 B FourPACKM_E2eSCR/Diode ModulesStacksExplanationsPresspacksIGBTEconoPIM 2B PressFITϑM_E2hEconoPACK 2 BϑM_E2gϑEconoPACK Shunt (TriPACK-High)M_E3hEconoPACK Shunt (TriPACK-Low)M_E2f45
EconoPACK 2B PressFIT M_E2k EconoPACK 2B M_E2iExplanationsPresspacksIGBTSCR/Diode ModulesϑEconoPACK 2B PressFIT M_E2j EconoPACK 2B M_E2lStacksEconoPIMM_E2mϑ46
EconoPACK3 AM_E3cEconoPIM3M_E3aPresspacksSCR/Diode ModulesIGBTEconoPACK3 BM_E3bEconoPACK3 B FourPACKϑM_E3dϑϑStacksEconoPACK 3 B PressFIT M_E3e EconoPIM 3 B PressFIT M_E3fϑExplanationsϑ47
EconoPACK Shunt (Full Bridges) M_E3g EconoPACK 3B Shunt (Full Bridges) M_E3kExplanationsSCR/Diode ModulesStacksPresspacksIGBTEconoPACK 3B M_E3i EconoPIM 3B M_E3jϑϑ48
34 mm Module M_34a13M510 2,8 x 0,5562 mm Module M_62aplug-in depth 7mm min.screwing depth 10mm max.2052229,530,510ø6,46 171 2 36136717263413,2520M6IGBTHalf Bridge:GAR = DFGAL = FDscrewing depth 8mm max.1223 23 178094GAR-Chopper:345126735454GAL-Chopper:36127screwing depth 10mm max.6SCR/Diode Modules25.436.5M4 16 16 13,261,448205244 23920 2993106.41M6 13,26.5 20Presspacks2153screwing depth 8mm max.screwing depth 10mm max.Stacks25.436.5M4 16 16 13,261,448205244 2392093106.42916630,530,913,25 14 141231467541527304861,4Single Switch 62M_62b6.5GAR = DFGAL = FDSingle Switcheswith Series DiodeSingle Switch 62, collector sense28 287993106.4Half Bridge:13524GAR-Chopper: GAL-Chopper: 334156122 7screwing depth 8mm max.screwing depth 10mm max.67M_62cSingle Diode 62M_62dDual Diode 62screwing depth 10mm max.plug-in depth 7mm min.20M_62e13,2530,530,913,25 14 141413,2M6206.520M66.511228 287993106.436754615273304861,4Explanations21249
EconoPACK+M_E+aø4.5ø4.3ø2.5-0.3ø2.1-0.3Explanations4.50,8SCR/Diode ModulesPresspacksStacksIGBT20.5±117±0.512.51,517±0.55.511.56±0.3max. 10U V WM6 1212252015262721221617104282923241819 147613922 11 22 11.550 502250157.51622829ϑ1516171314+ ++20252126U 22V 2718231924- --WEconoDUAL394.51101221371501314M_ED350
EconoDUAL2M_ED2aExplanationsPresspacksStacksSCR/Diode ModulesIGBTEconoDUAL2M_ED2aEconoDUAL2M_ED2b51
PrimePACK 2H_PP2aPrimePACK 3H_PP3aSCR/Diode ModulesIGBTIHMH_IH1IHMH_IH21861,5M8screwing depthmax. 16screwing depthmax. 838C(K)C(K)5Presspacks53514,5 1131,5CEC130114EGCE2030124140CGEE(A)E(A)DD...external connections( to be done)CEFZ...CEM428 716,52,518,5StacksIHM/IHVscrewing depthmax. 161861,5M8screwing depthmax. 8C(K)H_IH4C(K)IHM/IHVH_IH4B538E E(A) (A)DD...29,5130114CGCCEEEFD.. .Explanations15405,2M4CE4,0 deepC E2,5 deep28 7 10,6548,8CEG10,352040124140CGECGECECFD...-KCCEexternal connection(to be done)FZ...52
IHMH_IH5IHVH_IH6max 811,8555,2max 1629,51301141 2 3538IGBTIHM/IHVscrewing depthmax. 861,51361,5M8screwing depthmax. 16538H_IH71580,168,650,539IHM/IHV728140107E1for M4 C1C143,5 deepG1E125,529,545for M8E2G25C229,54347C2E2206401241603,5 deepE1G1C1externalconnections (toE1 C2C1E2C2G2E2H_IH7BSCR/Diode Modules15405,2screwing depthmax. 1629,51C1905723C1714C2040124140EEE4,0 deepC E GM42,5 deep8 7 6 5screwing depth20,25max. 82879,4 41,257external connection (to be done)external connection (to be done)external connections (to be done)CC C CC C CCCC C CFD...FD...-KFZ...GGGEEEE E EE E EE E EFD...-KC C C CGEsrewing depthmax. 16srewing depthmax. 8Presspacks61,51361,5M8Stacksscrewing depthmax. 161190171572 3U V W416EE EFZCGEC C CE E Eexternal connection (to be done)IHMH_IH8IHM/IHV9,75for M5C1 (K1)H_IH953829,5screwing depthmax. 167357538E1/C2(A1/K2)536.572,8x0,55,5CuGuEuCxGxEx+ + +- - -CX CU CY CV CZ CW4 deep3,358 7 6 5GX EX EU GU GY EY EV GV GZ EZ EW GW26,4573x5=15+ + +Cv CwGv GwEv EwUVCy CzWGy GzEy Ez external connections (to be done)- - -303012414041,9517.555,52,8x0,526,4E1/C2C1E21030 30124140C1 C2/E1 G14 deepG2 E27527,15 27,15C1G1C2/E1C1E2 (A2)FD...E2 (A2)DD...C1G1C2/E1E1/C2(K2)G2E2C1E2FF...E1/C2Explanations53
IHVH_IH10IHVH_IH11SCR/Diode ModulesExplanationsStacksPresspacksIGBTIHVH_IH12external connection(to be done)FD...-Kexternal connection(to be done)54
EiceDRIVER2ED300C17-S/2ED300C17-STEDFAE. AFaultDetectionVCE satVCE sat AINADeadtimePulseStagePulse<strong>Form</strong>erSoftshutdownGate ACOM AIGBTCAUndervoltagePulseMemoryV A+V A-INBDeadtimeSense ASense ACBFaultDetectionDOCDRC AMODUSRESETFAULTVDCGNDFault-MomoryLogicPulseStageDC/DCConverterControlPulse<strong>Form</strong>erFaultDetectionUndervoltageSoftshutdownPulseMemoryEDFAVCE satSense BDOCDE. BVCE sat BGate BCOM BV B+V B-Sense BRC BSCR/Diode Modules2,95 mm RM 2,54 mm RM 2,54mm 2,95 mm28 mmTM2ED300C17-S72 mm45TMEiceDRIVER24Max. 25 mm20 mmd=1 mmPCBd=1 mmPresspacks60,5 mm12ED300C17-S10020240AA2326 mmRM 2,54 mm2,31mm 2,31mmClearance distance and creep page Primary/Secondary >15 mmClearance distance Secondary/Secondary > 6 mmCreep page Secondary/Secondary > 14 mmExplanationsStacks55
EiceDRIVER2ED020I12-FIExplanationsStacksPresspacksSCR/Diode ModulesIGBT56
&EiceDRIVER1ED020I12-FGND192V8VEE2IGBTIN+IN-1011/RST∆t∆tLOGICTXRXLOGICVEE2VCC276CLAMPOUTRDY/FLT1213/FLTUVLOUVLORDY_LOOPVEE2I154VCC2TLSETI2CLAMP/RSTVCC1GND1141516LOGICRXTXLOGICDESAT9VI3I4321GND2DESATVEE2ExplanationsSCR/Diode ModulesPresspacks1)Does not include plastic or metal protusions of 0.15 max per sideStacks57
0.2-0.12.45-0.22.65 MAX.8° MAX.EiceDRIVER6ED003L06FExplanationsSCR/Diode ModulesIGBT0.35 x 45°Presspacks0.351.27+0.152)0.228x0.17.610.31)-0.2+0.80.4±0.30.23 +0.092815StacksIndex Marking1 141)18.1 -0.41)2)Does not include plastic or metal protrusions of 0.15 max per sideDoes not include dambar protrusion of 0.05 max per side58
Thyristors &DiodesExplanationsSCR/Diode ModulesIGBTWe offer bridge rectifier modules in solder pin design likeEasyBRIDGE or EconoBRIDGE modules. The available configurations arefully- and half controlled rectifiers with brake IGBT and optional NTC resistor.They cover the current range Id from 25 A up to 180 A at 800 V and 1600 V. TheIsoPACK family with screwable load terminals are fully- , half- and uncontrolledrectifier modules. The three phase AC Switches complete the IsoPACKproduct family. The current range covers I d 85 A up to 205 A at 1600 V.PresspacksBesides the standard phase thyristors and rectifier diodes, wealso provide bipolar products for fast switching applications. For nearly all AC/DC power systems we provide discs in ceramic and epoxy housing as well asPowerBLOCK modules in various thyristor and diode configurations.As an extension, our product portfolio also counts the Light TriggeredThyristors (LTT). These ceramic discs offer an easy way of triggering by usingoptic couplers. No insulation problem between load and trigger unit. Higherreliability thanks of less electronic components on high potential by using theinternal protection functions (BoD and dv/dt protection). The power range coversblocking voltages from V RRM 5200 V up to 8000 V and current ratings fromI TAV 550 A up to 3480 A.Stacks59
ExplanationsStacksPresspacksSCR/Diode ModulesOverview Bridge Rectifier, AC-Switches20001600eupec eupec eupecEasyBRIDGE IsoPACK IsoPACK EconoBRIDGEBridge AC-SwitchI d = 25 - 75 AI d = 85 - 205 AI RMS = 85 - 145 AI d = 84 - 180 AConfigurationB2UB6UConfigurationB6U/HK/CConfigurationW3CConfigurationB6UB6HKV RRM25/33/45 mm 42/54 mm 45 mmIGBT60
EasyBRIDGE800 VType IGBT Inverter Brake Chopper Outline/V RRM I d R thJC V t0 r t V CE I C * R thJC pageV A K/W V mΩ V A K/Wmax. T vj = T C = max.150°C 80°Csingle phaseDDB2U30N08VR 800 48 1,30 0,75 6,95 600 20 1,50 L_750d/64IGBTϑϑthree phaseDDB6U30N08VR 800 30 1,80 0,85 8,30 600 20 1,50 L_750e/64three phaseDDB6U50N08XR 800 50 1,20 0,75 6,95 600 30 1,05 L_1c/64SCR/Diode Modules1600 VType IGBT Inverter Brake Chopper Outline/V RRM I d R thJC V t0 r t V CE I C * R thJC pageV A K/W V mΩ V A K/Wmax. T vj = T C = max.150°C 80°Cthree phaseDDB6U25N16VR 1600 30 1,55 0,76 7,60 1200 15 1,45 L_750e/64Presspacksϑthree phaseDDB6U40N16XR 1600 50 0,90 0,80 4,35 1200 25 0,90 L_1c/64Stacksthree phaseDDB6U75N16YR 1600 65 0,90 0,83 3,90 1200 50 0,55 L_2i/64ϑ* as specified in data sheetExplanations61
eupec EconoBRIDGE RectifierIGBTType V DRM , V RRM I FRMSM I FSM I d /T c V (TO) r T R thJC T vj max V CES I C Outline/V (I TRMSM ) (I TSM ) A/°C V mΩ °C/W °C V A pageV DSM = V DRM A A T vj = T vj = per armV RSM = 10 ms T vj max T vj max 120° elV RRM + 100V T vj maxSquareDD B6U 100 N 16 R 1600 60 550 100/100 0,75 5,50 1,15 150 M_EB2a/65DD B6U 144 N 16 R 1600 100 1000 145/100 0,75 3,10 0,89 150 M_EB2a/65waveSCR/Diode Modules3 phase bridge rectifier,uncontrolled3 phase bridge rectifier,uncontrolled withbrake chopperDD B6U 84 N 16 RR 1600 60 550 85/100 0,75 5,50 1,45 150 1200 50 M_EB2b/65DD B6U 100 N 16 RR 1600 60 550 100/100 0,75 5,50 1,15 150 1200 50 M_EB2b/65DD B6U 104 N 16 RR 1600 60 550 105/100 0,75 5,50 1,08 150 1200 50 M_EB2c/65DD B6U 134 N 16 RR 1600 80 550 134/100 0,75 6,30 0,70 150 1200 70 M_EB2c/65Presspacks3 phase bridge rectifier,uncontrolled withbrake chopper and NTCTD B6HK 124 N 16 RR 1600 70 550 125/85 0,75 6,30 0,63 125 1200 70 M_EB2d/653 phase bridge rectifier,halfcontrolled withbrake chopper and NTCTD B6HK 180 N 16 RR_ B11 1600 150 1400 180/80 0,83 2,30 0,35 150 1200 100 M_EB2e/65Stacks3 phase bridge rectifier,halfcontrolled with brakechopper (PressFIT)_B11 PressFIT Moduleseupec EconoBRIDGE Rectifiers are UL recognizedExplanations62
eupec IsoPACK Bridge Rectifier3 phase bridge rectifier,uncontrolled3 phase bridge rectifier,half controlledType V DRM , V RRM I FRMSM I FSM I d /T c V (TO) r T R thJC T vj max Outline/V (I TRMSM ) (I TSM ) A/°C V mΩ °C/W °C pageV DSM = V DRM A A T vj = T vj = per armV RSM = 10 ms T vj max T vj max 120° elV RRM + 100V T vj maxSquareDD B6U 85 N 1600 60 550 85/100 0,75 5,50 1,45 150 M_1Pa/66DD B6U 145 N 1600 100 1000 145/100 0,75 3,10 0,89 150 M_1Pa/66DD B6U 205 N 1600 120 1375 205/100 0,75 2,20 0,59 150 M_1Pa/66DD B6U 215 N 1600 125 1850 215/100 0,75 1,60 0,49 150 M_1Pa/66TD B6HK 95 N 1600 75 620 95/85 0,95 5,50 0,82 125 M_1Pb/66TD B6HK 135 N 1600 100 870 135/85 0,95 4,30 0,59 125 M_1Pb/66TD B6HK 165 N 1600 120 1050 165/85 0,95 3,20 0,49 125 M_1Pb/66TT B6C 95 N 1600 75 620 95/85 0,95 5,50 0,82 125 M_1Pb/66TT B6C 135 N 1600 100 870 135/85 0,95 4,30 0,59 125 M_1Pb/66TT B6C 165 N 1600 120 1050 165/85 0,95 3,20 0,49 125 M_1Pb/66waveIGBTSCR/Diode Modules3 phase bridge rectifier,fully controlledeupec IsoPACK AC-SwitchesPresspacksType V DRM , V RRM I FRMSM I FSM I d /T c V (TO) r T R thJC T vj max Outline/V (I TRMSM ) (I TSM ) A/°C V mΩ °C/W °C pageV DSM = V DRM A A T vj = T vj = per armV RSM = 10 ms T vj max T vj max 120° elV RRM + 100V T vj maxSquareTT W3C 85 N 1600 75 620 85/85 0,95 5,50 0,70 125 M_1Pb/66TT W3C 115 N 1600 100 870 115/85 0,95 4,30 0,50 125 M_1Pb/66TT W3C 145 N 1600 120 1050 145/85 0,95 3,20 0,42 125 M_1Pb/66waveStacks3 phase AC-Switches,fully controlledeupec IsoPACK modules are UL recognizedSets of srews will be included at customer‘s request at no cost. Requests must be made at time of order.Explanations63
OutlinesEasyBRIDGE750L_750dEasyBRIDGE750L_750ePresspacksExplanationsStacksSCR/Diode ModulesIGBTEasyBRIDGE1L_1cEasyBRIDGE2L_2i64
eupec EconoBRIDGE 2 RectifierM_EB2aeupec EconoBRIDGE 2 RectifierM_EB2bSCR/Diode ModulesStacksExplanationsPresspacksIGBTeupec EconoBRIDGE 2 RectifierM_EB2ceupec EconoBRIDGE 2 RectifierM_EB2dϑϑeupec EconoBRIDGE 2 RectifierM_EB2e65
eupec IsoPACK 42 M_1Pa eupec IsoPACK 54 M_1Pb12M62,8 x 0,832IGBT8,5 max.1834Æ 6,4SCR/Diode Modules321468094456ExplanationsPresspacksStacks30M53084348Æ 6,463030367 1 28141331 2 3549 4 561221,541,510 11424 5 632110 9 117 8 144680944561 2 332110 9 1145678 1410 9 114 5666
3600340032003000280026002400*)2200 690 V RMS2000*)1800 550 V RMS16001400 400 V RMS120020 mm 25 mm 30 mm 34 mm 50 mm 50 mm Single 60 mmV RRM[V]*) highest Voltage on requestExplanationsStacksPresspacksSCR/Diode Modules70 mm SingleIGBTTT61N...TT92N...TT104N...TT106N...TT121N...TT131N...TT142N...TT162N...TT180N...TT170N...TT210N...TT250N...TT251N...TT285N...TT330N...TZ425N...TZ500N...TZ600N...TT380N...TT425N...TT70N...TT122N...TT140N...TT150N...TT215N...TZ150N...TZ310N...TZ375N...TZ400N...TZ430N...TT310N...TT375N...TT400N...TZ240N...TT240N...TT430N...TT500N...TT570N...TZ530N...TZ800N...TZ740N...TZ630N...Overview PowerBLOCK Thyristor Modules for Phase Control67
PowerBLOCKThyristor Modules for Phase ControlStacksPresspacksSCR/Diode ModulesIGBTType V DRM I TRMSM I TSM ∫i 2 dt I TAVM /T c V (TO) r T (di/dt) cr t q (dv/dt) cr R thJC R thCK T vj max Outline /V RRM V A A A 2 s·10 3 A/°C V mΩ A/µs µs V/µs °C/W °C/W °C pageV DSM = V DRM 10 ms, 10 ms, 180° T vj = T vj = DIN typ. DIN IEC 180°V RSM = T vj max T vj max el sin T vj max T vj max IEC 747 - 6 el sinV RRM + 100 V 747- 6Base TT 61 N 1200 … 1600 120 1400 9,8 60/85 0,80 3,40 150 120 F = 1000 0,520 0,16 125 TP20/79plate = TT 92 N 1200 … 1600 160 1800 16,2 92/85 0,85 2,15 150 150 F = 1000 0,370 0,10 130 TP20/7920 mm TT 104 N 1200 … 1400 160 1800 16,2 104/85 0,85 2,15 150 150 F = 1000 0,370 0,10 140 TP20/79Base TT 70 N 1600 … 2400* 150 1450 10,5 70/85 1,00 3,80 100 300 F = 1000 0,350 0,08 125 TP25/79plate = TT 106 N 1200 … 1800 180 2000 20 106/85 0,90 2,60 150 150 F = 1000 0,330 0,08 140 TP25/7925 mmBase TT 121 N 1200 … 2000* 200 2350 27,6 121/85 0,85 2,00 150 180 F = 1000 0,230 0,06 125 TP30/79plate = TT 131 N 1200 … 1600 220 3200 51,2 131/85 0,85 1,50 150 180 F = 1000 0,230 0,06 125 TP30/7930 mmBase TT 122 N 1600 … 2200 220 2950 43,5 122/85 1,00 2,15 100 300 F = 1000 0,200 0,06 125 TP34/79plate = TT 140 N 1600 … 2200 250 3200 51,2 140/85 0,90 1,75 150 300 F = 1000 0,190 0,06 125 TP34/7934 mm TT 142 N 1200 … 1600 230 4100 84 142/85 0,90 1,10 150 200 F = 1000 0,220 0,06 125 TP34/79TT 162 N 1200 … 1600 260 4400 97 162/85 0,85 0,95 150 200 F = 1000 0,200 0,06 125 TP34/79TT 180 N 1200 … 1600 285 4100 84 180/85 0,85 0,90 150 200 F = 1000 0,200 0,06 130 TP34/79Base TT 150 N 1800 … 2600 350 4000 80 150/85 1,20 2,30 60 300 F = 1000 0,130 0,04 125 TP50/79plate = TT 170 N 1200 … 1800 350 4600 106 170/85 0,95 1,00 150 250 F = 1000 0,170 0,04 125 TP50/7950 mm TT 210 N 1200 … 1800 410 5800 168 210/85 1,00 0,85 150 200 F = 1000 0,130 0,04 125 TP50/79TT 215 N 1800 … 2200 410 6300 198 215/85 0,95 0,92 100 300 F = 1000 0,130 0,04 125 TP50/79TT 250 N 1200 … 1800 410 7000 245 250/85 0,80 0,70 150 250 F = 1000 0,130 0,04 125 TP50/79TT 251 N 1200 … 1800 410 8000 320 250/85 0,80 0,70 250 250 F = 1000 0,130 0,04 125 TP50/79TT 285 N 1200 … 1600 450 8000 320 285/92 0,80 0,70 250 250 F = 1000 0,117 0,04 135 TP50/79TT 330 N 1200 … 1600 520 8000 320 330/85 0,80 0,60 250 250 F = 1000 0,117 0,04 135 TP50/79Base TT 240 N 2800 … 3600 700 5500 151 240/85 1,17 1,70 100 350 F = 1000 0,078 0,02 125 TP60/80plate = TT 310 N 2000 … 2600 700 9000 405 310/85 1,00 0,86 120 300 F = 1000 0,078 0,02 125 TP60/8060 mm TT 375 N 1800 … 2200 900 10600 561 375/85 0,85 0,56 120 300 F = 1000 0,078 0,02 125 TP60/80TT 380 N 1200 … 1800 800 11000 605 380/85 1,00 0,38 120 250 F = 1000 0,078 0,02 125 TP60/80TT 400 N 2000 … 2600 800 11000 605 400/85 1,00 0,50 150 300 F = 1000 0,065 0,02 125 TP60/80TT 425 N 1200 … 1800 800 12500 781 425/85 0,90 0,30 120 250 F = 1000 0,078 0,02 125 TP60/80TT 430 N 1800 … 2200 800 12000 720 430/85 0,95 0,45 150 300 F = 1000 0,065 0,02 125 TP60/80TT 500 N 1200 … 1800 900 14500 1051 500/85 0,90 0,27 200 250 F = 1000 0,065 0,02 125 TP60/80TT 570 N 1200 … 1600 900 14000 980 570/87 0,90 0,27 200 250 F = 1000 0,065 0,02 135 TP60/80PowerBLOCK modules are UL recognizedCommon anode or cathode on request* Highest voltage on requestExplanations68
PowerBLOCKSingle Thyristor Modules for Phase ControlType V DRM I TRMSM I TSM ∫i 2 dt I TAVM /T c V (TO) r T (di/dt) cr t q (dv/dt) cr R thJC R thCK T vj max Outline /V RRM V A A A 2 s·10 3 A/°C V mΩ A/µs µs V/µs °C/W °C/W °C pageV DSM = V DRM 10 ms, 10 ms, 180° T vj = T vj = DIN typ. DIN IEC 180°V RSM = T vj max T vj max el sin T vj max T vj max IEC 747 - 6 el sinV RRM + 100 V 747- 6Base TZ 150 N 1800 … 2600 350 4000 80 150/85 1,20 2,30 60 300 F = 1000 0,130 0,04 125 TP50.1/79plate = TZ 240 N 2800 … 3600 700 5500 151 240/85 1,17 1,70 100 350 F = 1000 0,078 0,02 125 TP50.1/7950 mm TZ 310 N 2000 … 2600 700 8000 320 310/85 1,00 0,86 120 300 F = 1000 0,078 0,02 125 TP50.1/79TZ 375 N 1800 … 2200 1050 10600 561 375/85 0,85 0,56 120 300 F = 1000 0,078 0,02 125 TP50.1/79TZ 400 N 2000 … 2600 1050 11000 605 400/85 1,00 0,50 150 300 F = 1000 0,065 0,02 125 TP50.1/79TZ 425 N 1200 … 1800 800 12500 781 425/85 0,90 0,30 120 250 F = 1000 0,078 0,02 125 TP50.1/79TZ 430 N 1800 … 2200 1050 12000 720 430/85 0,95 0,45 150 300 F = 1000 0,065 0,02 125 TP50.1/79TZ 500 N 1200 … 1800 1050 14500 1051 500/85 0,90 0,27 200 250 F = 1000 0,065 0,02 125 TP50.1/79TZ 600 N 1200 … 1600 1050 14000 980 600/85 0,90 0,27 200 250 F = 1000 0,065 0,02 135 TP50.1/79Base TZ 530 N 3000 … 3600 1500 20000 2000 530/85 1,05 0,49 80 400 F = 1000 0,045 0,01 125 TP70/80plate = TZ 630 N 2200 … 2800 1500 23000 2650 630/85 0,95 0,37 150 400 F = 1000 0,042 0,01 125 TP70/8070 mm TZ 740 N 1800 … 2200 1500 26500 3500 740/85 0,90 0,21 200 350 F = 1000 0,042 0,01 125 TP70/80TZ 800 N 1200 … 1800 1500 30000 4500 800/85 0,85 0,17 200 240 F = 1000 0,042 0,01 125 TP70/80IGBTSCR/Diode ModulesPowerBLOCK modules are UL recognizedExplanationsStacksPresspacks69
ExplanationsStacksPresspacksSCR/Diode Modules3600340032003000280026002400*)2200 690 V RMS2000*)1800 550 V RMS16001400 400 V RMS120020 mm 25 mm 30 mm 34 mm 50 mm 60 mm*) highest Voltage on requestIGBTTD61N...TD92N...TD104N...TD106N...TD121N...TD131N...TD142N...TD162N...TD180N...TD170N...TD210N...TD250N...TD251N...TD285N...TD330N...TD425N...TD70N...TD122N...TD140N...TD150N...TD215N...TD310N...TD375N...TD400N...TD240N...TD430N...TD570N...TD500N...Overview PowerBLOCK Thyristor/Diode Modules for Phase ControlV RRM[V]70
PowerBLOCKThyristor/Diode Modules for Phase ControlType V DRM I TRMSM I TSM ∫i 2 dt I TAVM /T c V (TO) r T (di/dt) cr t q (dv/dt) cr R thJC R thCK T vj max Outline /V RRM V A A A 2 s·10 3 A/°C V mΩ A/µs µs V/µs °C/W °C/W °C pageV DSM = V DRM 10 ms, 10 ms, 180° T vj = T vj = DIN typ. DIN IEC 180°V RSM = T vj max T vj max el sin T vj max T vj max IEC 747 - 6 el sinV RRM + 100 V 747- 6Base TD 61 N 1200 … 1600 120 1400 9,8 60/85 0,80 3,40 150 120 F = 1000 0,520 0,16 125 TP20/79plate = TD 92 N 1200 … 1600 160 1800 16,2 92/85 0,85 2,15 150 150 F = 1000 0,370 0,10 130 TP20/7920 mm TD 104 N 1200 … 1400 160 1800 16,2 104/85 0,85 2,15 150 150 F = 1000 0,370 0,10 140 TP20/79Base TD 70 N 1600 … 2400* 150 1450 10,5 70/85 1,00 3,80 100 300 F = 1000 0,350 0,08 125 TP25/79plate = TD 106 N 1200 … 1800 180 2000 20 106/85 0,90 2,60 150 150 F = 1000 0,330 0,08 140 TP25/7925 mmBase TD 121 N 1200 … 2000* 200 2350 27,6 121/85 0,85 2,00 150 180 F = 1000 0,230 0,06 125 TP30/79plate = TD 131 N 1200 … 1600 220 3200 51,2 131/85 0,85 1,50 150 180 F = 1000 0,230 0,06 125 TP30/7930 mmBase TD 122 N 1600 … 2200 220 2950 43,5 122/85 1,00 2,15 100 300 F = 1000 0,200 0,06 125 TP34/79plate = TD 140 N 1600 … 2200 250 3200 51,2 140/85 0,90 1,75 150 300 F = 1000 0,190 0,06 125 TP34/7934 mm TD 142 N 1200 … 1600 230 4100 84 142/85 0,90 1,10 150 200 F = 1000 0,220 0,06 125 TP34/79TD 162 N 1200 … 1600 260 4400 97 162/85 0,85 0,95 150 200 F = 1000 0,200 0,06 125 TP34/79TD 180 N 1200 … 1600 285 4100 84 180/85 0,85 0,90 150 200 F = 1000 0,200 0,06 130 TP34/79Base TD 150 N 1800 … 2600 350 4000 80 150/85 1,20 2,30 60 300 F = 1000 0,130 0,04 125 TP50/79plate = TD 170 N 1200 … 1800 350 4600 106 170/85 0,95 1,00 150 250 F = 1000 0,170 0,04 125 TP50/7950 mm TD 210 N 1200 … 1800 410 5800 168 210/85 1,00 0,85 150 200 F = 1000 0,130 0,04 125 TP50/79TD 215 N 1800 … 2200 410 6300 198 215/85 0,95 0,92 100 300 F = 1000 0,130 0,04 125 TP50/79TD 250 N 1200 … 1800 410 7000 245 250/85 0,80 0,70 150 250 F = 1000 0,130 0,04 125 TP50/79TD 251 N 1200 … 1800 410 8000 320 250/85 0,80 0,70 250 250 F = 1000 0,130 0,04 125 TP50/79TD 285 N 1200 … 1600 450 8000 320 285/92 0,80 0,70 250 250 F = 1000 0,117 0,04 135 TP50/79TD 330 N 1200 … 1600 520 8000 320 330/85 0,80 0,60 250 250 F = 1000 0,117 0,04 135 TP50/79Base TD 240 N 2800 … 3600 700 5500 151 240/85 1,17 1,70 100 350 F = 1000 0,078 0,02 125 TP60/80plate = TD 310 N 2000 … 2600 700 9000 405 310/85 1,00 0,86 120 300 F = 1000 0,078 0,02 125 TP60/8060 mm TD 375 N 1800 … 2200 908 10600 561 375/85 0,85 0,56 120 300 F = 1000 0,078 0,02 125 TP60/80TD 400 N 2000 … 2600 800 11000 605 400/85 1,00 0,50 150 300 F = 1000 0,065 0,02 125 TP60/80TD 425 N 1200 … 1800 800 12500 781 425/85 0,90 0,30 120 250 F = 1000 0,078 0,02 125 TP60/80TD 430 N 1800 … 2200 800 12000 720 430/85 0,95 0,45 150 300 F = 1000 0,065 0,02 125 TP60/80TD 500 N 1200 … 1800 900 14500 1051 500/85 0,90 0,27 200 250 F = 1000 0,065 0,02 125 TP60/80TD 570 N 1200 … 1600 900 14000 980 570/87 0,90 0,27 200 250 F = 1000 0,065 0,02 135 TP60/80TT 570 N 1200 … 1600 900 14000 980 570/87 0,90 0,27 200 250 F = 1000 0,065 0,02 135 TP60/80StacksPresspacksSCR/Diode ModulesIGBTPowerBLOCK modules are UL recognizedCommon anode or cathode on request* Highest voltage on requestModules for current source inverter with higher blocking Diodes on requestExplanations71
ExplanationsStacksPresspacksSCR/Diode ModulesOverview PowerBLOCK Diode/Thyristor Modules for Phase Control36003400320030002800260024002200690 V RMS20001800 550 V RMS16001400 400 V RMS120020 mm 34 mm 50 mm 60 mm*) highest Voltage on requestIGBTDT61N...DT92N...DT142N...DT170N...DT250N...DT150N...DT430N...V RRM[V]72
PowerBLOCKDiode/Thyristor Modules for Phase ControlType V DRM I TRMSM I TSM ∫i 2 dt I TAVM /T c V (TO) r T (di/dt) cr t q (dv/dt) cr R thJC R thCK T vj max Outline /V RRM V A A A 2 s·10 3 A/°C V mΩ A/µs µs V/µs °C/W °C/W °C pageV DSM = V DRM 10 ms, 10 ms, 180° T vj = T vj = DIN typ. DIN IEC 180°V RSM = T vj max T vj max el sin T vj max T vj max IEC 747 - 6 el sinV RRM + 100 V 747- 6Base DT 61 N 1200 … 1600 120 1400 9,8 60/85 0,80 3,40 150 120 F = 1000 0,52 0,16 125 TP20/79plate = DT 92 N 1200 … 1600 160 1800 16,2 92/85 0,85 2,15 150 150 F = 1000 0,37 0,10 130 TP20/7920 mmBase DT 142 N 1200 … 1400 230 4100 84 142/85 0,90 1,10 150 200 F = 1000 0,22 0,06 125 TP34/79plate =34 mmBase DT 150 N 2600 350 4000 80 150/85 1,20 2,30 60 300 F = 1000 0,13 0,04 125 TP50/79plate = DT 170 N 1200 350 4600 106 170/85 0,95 1,00 150 250 F = 1000 0,17 0,04 125 TP50/7950 mm DT 250 N 1200 … 1600 410 7000 245 250/85 0,80 0,70 150 250 F = 1000 0,13 0,04 125 TP50/79Base DT 430 N 2200 800 12000 720 430/85 0,95 0,45 150 300 F = 1000 0,065 0,02 125 TP60/80plate =60 mmIGBTSCR/Diode ModulesPowerBLOCK modules are UL recognizedCommon anode or cathode on requestModules for current source inverter with higher blocking Diodes on requestExplanationsStacksPresspacks73
ExplanationsStacksPresspacksSCR/Diode Modules4400420040003800360034003200300028002600*) highest Voltage on requestIGBTDD98N...DD/231N...DD/ND261N...DZ540N...DD540N...24002200 690 V RMS2000180016001400 400 V RMS120020 mm 25 mm 30 mm 34 mm 50 mm 50 mm Single 60 mm70 mm SingleDD/ND89N...DD/ND104N...DD106N...DD151N...DD/ND171N...DD/ND260N...DD/ND350N...DZ600N...DD175N...DD435N...DD/ND600N...DZ1070N...DZ950N...Overview PowerBLOCK Diode Modules for Phase Control550 V RMSV RRM[V]74
PowerBLOCKRectifier Diode Modules for Phase ControlType V DRM I TRMSM I TSM ∫i 2 dt I TAVM /T c V (TO) r T (dv/dt) cr R thJC R thCK Outline /V RRM V A A A 2 s·10 3 A/°C V mΩ V/µs °C/W °C/W pageV DSM = V DRM 10 ms, 10 ms, 180° T vj = T vj = DIN IEC 180°V RSM = T vj max T vj max el sin T vj max T vj max 747 - 6 el sinV RRM + 100 VBase DD 89 N 1200 … 1800 140 2400 28,8 89/100 0,75 2,300 0,450 0,10 150 DP20/81plate = ND 89 N 1200 … 1800 140 2400 28,8 89/100 0,75 2,300 0,450 0,10 150 DP20/8120 mm DD 98 N 2000 … 2500 160 2000 20 98/100 0,82 2,000 0,390 0,10 150 DP20/81DD 104 N 1200 … 1800 160 2500 31,25 104/100 0,7 2,100 0,390 0,10 150 DP20/81ND 104 N 1200 … 1800 160 2500 31,25 104/100 0,7 2,100 0,390 0,10 150 DP20/81DD 106 N 1200 … 2200 180 2600 33,8 106/100 0,7 2,000 0,390 0,08 150 DP25/81Base DD 151 N 1200 … 2200* 240 4600 105,8 151/100 0,75 0,900 0,300 0,06 150 DP30/81plate =25 mmBase DD 171 N 1200 … 1800 270 5600 157 170/100 0,75 0,800 0,260 0,06 150 DP34/81plate =30 mmBase ND 171 N 1200 … 1800 270 5600 157 170/100 0,75 0,800 0,260 0,06 150 DP34/81plate = DD 175 N 3000 … 3400 350 4000 80 175/100 0,9 1,800 0,170 0,04 150 DP50/8134 mmBase DD 231 N 2000 … 2600 410 6400 205 231/100 0,8 0,840 0,170 0,04 150 DP50/81plate = DD 260 N 1200 … 1800 410 8300 344 260/100 0,7 0,680 0,170 0,04 150 DP50/8150 mm ND 260 N 1200 … 1800 410 8300 344 260/100 0,7 0,680 0,170 0,04 150 DP50ND/82DD 261 N 2000 … 2600 410 8300 344 260/100 0,7 0,680 0,170 0,04 150 DP50/81ND 261 N 2000 … 2600 410 8300 344 260/100 0,7 0,680 0,170 0,04 150 DP50ND/82DD 285 N 400 … 8001) 450 8300 344 285/100 0,75 0,400 0,170 0,04 150 DP50/81DD 350 N 1200 … 1800 550 11000 605 350/100 0,75 0,400 0,130 0,04 150 DP50/81ND 350 N 1200 … 1800 550 11000 605 350/100 0,75 0,400 0,130 0,04 150 DP50ND/82u DZ 435 N 2800 … 4000 1100 12000 720 435/100 0,84 0,600 0,078 0,02 150 DP50.1/82DZ 540 N 2000 … 2600 1150 14000 980 540/100 0,78 0,310 0,078 0,02 150 DP50.1/82DZ 600 N 1200 … 1800 1150 19000 1805 600/100 0,75 0,215 0,078 0,02 150 DP50.1/82u DZ 700 N 1800 … 2200 1150 21000 2205 700/100 0,78 0,185 0,065 0,02 150 DP50.1/82Base DD 435 N 2800 … 4000 900 12000 720 435/100 0,84 0,600 0,078 0,02 150 DP60/82plate = DD 540 N 2000 … 2600 900 14000 980 540/100 0,78 0,310 0,078 0,02 150 DP60/8260 mm DD 600 N 1200 … 1800 950 19000 1800 600/100 0,75 0,215 0,078 0,02 150 DP60/82ND 600 N 1200 … 1800 950 19000 1800 600/100 0,75 0,215 0,078 0,02 150 DP60/82u DD 700N 1800 … 2200 1100 21000 2205 700/100 0,78 0,185 0,065 0,02 150 DP60/82DZ 950 N 3600 … 4400 1500 29000 4205 950/100 0,85 0,280 0,042 0,01 150 DP70/82DZ 1070 N 1800 … 2800* 1700 35000 6125 1070/100 0,8 0,170 0,045 0,01 160 DP70/82StacksPresspacksSCR/Diode ModulesIGBTPowerBLOCK modules are UL recognizedCommon anode or cathode on request* Highest voltage on request1) V RSM = V RRM + 50Vu New typeExplanations75
PowerBLOCKFast Thyristor ModulesIGBTSCR/Diode ModulesPresspacksType V DRM I TRMSM I TSM ∫i 2 dt I TAVM /T c V (TO) r T (di/dt) cr t q (dv/dt) cr R thJC R thCK T vj max Outline /V RRM V A A A 2 s·10 3 A/°C V mΩ A/µs µs V/µs °C/W °C/W °C pageV DSM = V DRM 10 ms, 10 ms, 180° T vj = T vj = DIN typ. DIN IEC 180°V RSM = T vj max T vj max el sin T vj max T vj max IEC 747 - 6 el sinV RRM + 747- 6100 VBase TT 46 F06 KGF 600 120 1150 6,6 45/85 1,30 3,40 120 G ≤ 30 F = 1000 0,52 0,16 125 TP20/79plate = TT 46 F08 KDC 800 120 1150 6,6 45/85 1,30 3,40 120 D ≤ 15 C = 500 0,52 0,16 125 TP20/7920 mm TT 46 F10 KDC 1000 120 1150 6,6 45/85 1,30 3,40 120 D ≤ 15 C = 500 0,52 0,16 125 TP20/79TT 46 F10 KFC 1000 120 1150 6,6 45/85 1,30 3,40 120 F ≤ 25 C = 500 0,52 0,16 125 TP20/79TT 46 F12 KFC 1200 120 1150 6,6 45/85 1,30 3,40 120 F ≤ 25 C = 500 0,52 0,16 125 TP20/79TT 46 F12 KFM 1200 120 1150 6,6 45/85 1,30 3,40 120 F ≤ 25 M = 1000 0,52 0,16 125 TP20/79TD 46 F08 KDC 800 120 1150 6,6 45/85 1,30 3,40 120 D ≤ 15 C = 500 0,52 0,16 125 TP20/79TD 46 F10 KDC 1000 120 1150 6,6 45/85 1,30 3,40 120 D ≤ 15 C = 500 0,52 0,16 125 TP20/79TD 46 F10 KFC 1000 120 1150 6,6 45/85 1,30 3,40 120 F ≤ 25 C = 500 0,52 0,16 125 TP20/79TD 46 F12 KFC 1200 120 1150 6,6 45/85 1,30 3,40 120 F ≤ 25 C = 500 0,52 0,16 125 TP20/79DT 46 F08 KEC 800 120 1150 6,6 45/85 1,30 3,40 120 E ≤ 20 C = 500 0,52 0,16 125 TP20/79DT 46 F10 KEC 1000 120 1150 6,6 45/85 1,30 3,40 120 E ≤ 20 C = 500 0,52 0,16 125 TP20/79Base TT 60 F11 KDM 1100 150 1300 8,45 60/85 1,30 4,00 200 D ≤ 15 M = 1000 0,35 0,08 125 TP25/79plate =25 mmBase TT 101 F12 KFC 1200 200 2400 28,8 101/85 1,20 2,10 160 F ≤ 25 C = 500 0,23 0,06 125 TP30/79plate = TT 111 F06 KSC-A 1) 600 200 2600 33,8 111/85 1,20 1,40 200 S ≤ 18 C = 500 0,23 0,06 125 TP30/7930 mmTD 111 F08 KSC 1) 800 200 2600 33,8 111/85 1,20 1,40 200 S ≤ 18 C = 500 0,23 0,06 125 TP30/79Base TD 180 F12 KFC 1200 350 6000 180 180/85 1,30 0,90 200 F ≤ 25 C = 500 0,13 0,04 125 TP50/79plate = TD 180 F13 KFL 1300 350 6000 180 180/85 1,30 0,90 200 F ≤ 25 L = 500 0,13 0,04 125 TP50/7950 mmDT 180 F12 KFC 1200 350 6000 180 180/85 1,30 0,90 200 F ≤ 25 C = 500 0,13 0,04 125 TP50/79TD 200 F12 KEC 1200 410 6400 205 200/85 1,20 0,75 200 E ≤ 20 C = 500 0,13 0,04 125 TP50/79StacksTZ 335 F12 KFM 1200 700 10000 500 335/85 1,15 0,42 200 F ≤ 25 M = 1000 0,08 0,02 125 TP50.1/79TZ 335 F12 KGC 1200 700 10000 500 335/85 1,15 0,42 200 G ≤ 30 C = 500 0,08 0,02 125 TP50.1/79PowerBLOCK modules are UL recognizedCommon anode or cathode on request* Highest voltage on request1) V RRM ≤ 1000 V : V RSM = V RRM +50 VExplanations76
PowerBLOCKFast Asymmetric Thyristor ModulesType V DRM V RRM I TRMSM I TSM ∫i 2 dt I TAVM /T c V (TO) r T (di/dt) cr t q (dv/dt) cr R thJC R thCK T vj max Outline /V RRM V V RRM A A A 2 s·10 3 A/°C V mΩ A/µs µs V/µs °C/W °C/W °C pageV DSM = [(V RRM(C) ) 10 ms, 10 ms, 180° T vj = T vj = DIN typ. DIN IEC 180°V DRM tp = T vj max T vj max el sin T vj max T vj max IEC 747 - 6 el sinV RSM = 1µs] 747- 6V RRM +100 VBase AD 96 S08 KAF 800 15 [50] 200 2350 27,6 95/85 1,30 2,15 400 A ≤ 8 F = 1000 0,23 0,06 125 TP34/79plate = AD 96 S11 KAC 1100 15 [50] 200 2350 27,6 95/85 1,30 2,15 400 A ≤ 8 C = 500 0,23 0,06 125 TP34/7934 mmAD 116 S10 KBC 1000 15 [50] 220 2600 33,8 115/85 1,10 1,45 400 B ≤ 10 C = 500 0,23 0,06 125 TP34/79AD 116 S10 KDC 1000 15 [50] 220 2600 33,8 115/85 1,10 1,45 400 D ≤ 15 C = 500 0,23 0,06 125 TP34/79AD 116 S10 KDF 1000 15 [50] 220 2600 33,8 115/85 1,10 1,45 400 D ≤ 15 F = 1000 0,23 0,06 125 TP34/79Type V DRM V RRM I TRMSM I TSM ∫i 2 dt I TAVM /T c V (TO) r T (di/dt) cr t q (dv/dt) cr R thJC R thCK T vj max Outline /V RRM V V RRM A A A 2 s·10 3 A/°C V mΩ A/µs µs V/µs °C/W °C/W °C pageV DSM = [(V RRM(C) ) 10 ms, 10 ms, 180° T vj = T vj = DIN typ. DIN IEC 180°V DRM tp = T vj max T vj max el sin T vj max T vj max IEC 747 - 6 el sinV RSM = 1µs] 747- 6V RRM +100 VBase AD 180 S10 KBC 1000 15 [50] 350 4800 115 180/85 1,30 0,90 500 B ≤ 10 C = 500 0,13 0,04 125 TP50/79plate = AD 180 S12 KBF 1200 15 [50] 350 4800 115 180/85 1,30 0,90 500 B ≤ 10 F = 1000 0,13 0,04 125 TP50/7950 mm AD 180 S12 KCF 1200 15 [50] 350 4800 115 180/85 1,30 0,90 500 C ≤ 12 F = 1000 0,13 0,04 125 TP50/79AD 180 S12 KDC 1200 15 [50] 350 4800 115 180/85 1,30 0,90 500 D ≤ 15 C = 500 0,13 0,04 125 TP50/79AD 220 S12 KDF 1200 15 [50] 410 5200 135 220/85 1,10 0,60 500 D ≤ 15 F = 1000 0,13 0,04 125 TP50/79IGBTSCR/Diode ModulesPresspacksPowerBLOCK modules are UL recognized* Highest voltage on requestExplanationsStacks77
PowerBLOCKFast Diode ModulesIGBTSCR/Diode ModulesPresspacksType V DRM I TRMSM I TSM ∫i 2 dt I TAVM /T c V (TO) r T I RM R thJC R thCK T vj max Outline /V RRM V A A A 2 s·10 3 A/°C V mΩ A °C/W °C/W °C pageV DSM = V DRM 10 ms, 10 ms, 180° T vj = T vj = T vj = T vj max 180°V RSM = T vj max T vj max el sin T vj max T vj max -di/dt = el sinV RRM + 100 V100 A/µsBase DD 46 S 800 … 1200 1) 100 850 3,6 45/85 0,90 3,9 0,68 0,16 125 DP20/81plate = DD 61 S 1000 … 1400 1) 120 1600 12,8 61/100 1,00 2,2 82 0,62 0,16 150 DP20/8120 mm DD 81 S 1000 … 1400 150 1900 18,05 81/100 0,95 1,7 87 0,48 0,16 150 DP20/81DD 82 S 400 … 1000 1) 150 1900 18,05 81/100 0,95 1,7 65 0,48 0,16 150 DP20/81Base DD 121 S 1000 … 1400 200 2000 20 121/100 0,95 1,7 95 0,28 0,06 150 DP30/81plate = DD 122 S 400 … 1000 1) 200 2000 20 121/100 0,95 1,7 70 0,28 0,06 150 DP30/8120 mmBase DD 230 S 1800 … 2600 410 7500 281 230/100 1,00 0,8 0,15 0,04 150 DP50/81plate = ND 230 S 1800 … 2600 410 7500 281 230/100 1,00 0,8 0,15 0,04 150 DP50ND/8220 mm DD 241 S 1000 … 1400 410 7500 281 240/100 1,10 0,5 135 0,15 0,04 150 DP50/81ND 241 S 1000 … 1400 410 7500 281 240/100 1,10 0,5 135 0,15 0,04 150 DP50ND/82DD 242 S 600 … 1000 1) 410 7500 281 240/100 1,10 0,5 98 0,15 0,04 150 DP50/81ND 242 S 600 … 1000 1) 410 7500 281 240/100 1,10 0,5 98 0,15 0,04 150 DP50ND/82PowerBLOCK modules are UL recognizedCommon anode or cathode on request1) V RRM ≤ 1000 V : V RSM = V RRM +50 VExplanationsStacks78
Outlines20 mm TP2025 mm TP25SCR/Diode ModulesStacksExplanationsPresspacksIGBT30 mm TP3034 mm TP3450 mm TP5050 mm TP50.179
60 mm TP60ExplanationsSCR/Diode ModulesStacksPresspacksIGBT70 mm TP7080
20 mm DP2025 mm DP25ExplanationsSCR/Diode ModulesIGBT30 mm DP3030 mm DP30.1screwing depthmax. 12.015 25 254110206.31412M6311.530Presspacks80941 2 3DD...BaseplateDD 126 A..Stacks34 mm DP3450 mm DP5081
50 mm DP50.150 mm DP50NDSCR/Diode ModulesStacksExplanationsPresspacksIGBT60 mm DP60ND...70 mm DP7082
Overview Phase Control Thyristors in Disc HousingsV DRM- Concept V VTNTNTN VTN V V RMS TN V Ceramic DiscTN TN TN V TN TN TNEpoxy DiscPellet Ø , mmCase Ø mm VTNTN TNTN VTNTN VHigh Power-Discs VTN V V RMSTN TN TN TN VTNTNTN VTN VTN VTN TN TN TN TN TNTN V V V RMSTN TN TNTN TN TN V V V RMS TN TN TN TNTN TN TN TN TN TN VTN TNTN V V RMSTN VEpoxy-DiscsTNTNTNTNTNTNTNTNTNTNTNTNTN V VTN TN TN TN TN TN TN TNCase Ø mm mm / mm mm mm mm mm mm mmExplanationsStacksPresspacksSCR/Diode ModulesIGBT83
Pulsed Power ApplicationsIGBTType V BO V RRM V TM /I TM I TSM di/dt cr(on) di/dt cr(off) R thJC T vj max Outline /kV kV V/kA kA A / µs A / µs °C / W °C pagesingle singlepulse pulseT 4003 NH 5200 5200 1,80/5 100 5000 0,0045 120 T172.40L/101T 1503 NH 7500 7500 … 8000 3,00/4 55 5000 0,0060 120 T150.40L/101T 2563 NH 7500 7500 … 8000 2,95/5 90 5000 0,0045 120 T172.40L/101D 2601 NH 9000 5,50/4 22 7500 0,0075 140 D120.26K/100SCR/Diode ModulesPresspacksPhase Control Thyristorsup to 600 VType V DRM I TRMSM ∫i 2 dt I TSM V T /I T ITAVM V(TO) rT (di/dt) cr tq (dv/dt) cr R thJC T vj max Outline /V RRM V A A 2 s · kA V/kA A/°C V mΩ A/µs µs V/µs °C/W °C pageV DSM = V DRM 10 3 10 ms, T vj max 180 ° T vj = T vj = DIN IEC typ. DIN IEC 180 °V RSM = V RRM 10 ms, T vj max el sin T vj max T vj max 747- 6 747-6 el sin+ 50 V T vj max T c =85 °CT 348 N 200 … 600 600 80 41,9 2,00/1,10 348 1,00 0,700 200 200 F = 1000 0,1000 140 T41.14/97T 398 N 200 … 600 800 151 5,5 1,63/1,50 398 1,00 0,400 200 200 F = 1000 0,1000 140 T41.14/97T 568 N 200 … 600 900 225 6,7 1,76/2,00 568 0,80 0,440 200 200 F = 1000 0,0680 140 T41.14/97T 828 N 200 … 600 1500 720 12,0 1,65/2,50 828 1,00 0,230 300 150 F = 1000 0,0450 140 T50.14/97T 1078 N 200 … 600 2000 1050 14,5 1,81/3,50 1078 1,02 0,200 200 150 F = 1000 0,0330 140 T50.14/97T 1258 N 200 … 600 2500 2000 20,0 1,50/4,50 1258 1,00 0,100 120 200 F = 1000 0,0330 140 T60.14/97T 2509 N 200 … 600* 4900 8820 42,0 1,22/6,00 2509 0,75 0,072 200 200 F = 1000 0,0184 140 T75.26/97■ T 3709 N 200 … 600* 7000 18000 60,0 1,50/15,00 3710 0,75 0,0475 200 200 F = 1000 0,0125 140 T100.26/98u T 3710 N 200 … 600* 7000 18000 60,0 1,50/15,00 3710 0,75 0,0475 200 200 F = 1000 0,0125 140 T100.26K/100• Not for new design u New type * Highest voltage on requestExplanationsStacks84
Phase Control Thyristorsup to 1800 VType V DRM I TRMSM ∫i 2 dt I TSM V T /I T ITAVM V(TO) rT (di/dt) cr tq (dv/dt) cr R thJC T vj max Outline /V RRM V A A2s · kA V/kA A/°C V mΩ A/µs µs V/µs °C/W °C pageV DSM = V DRM 103 10 ms, T vj max 180 ° T vj = T vj = DIN IEC typ. DIN IEC 180 °V RSM = V RRM 10 ms, T vj max el sin T vj max T vj max 747- 6 747-6 el sin+ 100 V T vj max T c =85 °CT 86 N 1200 … 1800* 200 20 2,00 1,99/0,4 86 1,00 2,600 150 200 F = 1000 0,3000 125 TSW27/96T 130 N 1200 … 1800 300 45 3,00 1,96/0,6 130 1,08 1,530 150 180 F = 1000 0,2000 125 TSW27/96TFL36/96T 160 N 1200 … 1800 300 58 3,40 1,96/0,6 160 1,08 1,530 150 200 F = 1000 0,1500 125 TSW27/96TFL36/96T 178 N 1200 … 1800 300 34 2,60 1,9/0,6 178 0,92 1,500 150 180 F = 1000 0,1400 125 T41.14/97T 218 N 1200 … 1800 400 58 3,40 2,2/0,8 218 0,90 1,350 150 200 F = 1000 0,1100 125 T41.14/97T 221 N 1200 … 1800 450 163 5,70 1,74/0,8 221 1,10 0,750 150 200 F = 1000 0,1200 125 TSW41/96TFL54/96T 298 N 1200 … 1600 600 90,6 4,25 2,0/1,1 298 0,85 0,900 150 200 F = 1000 0,0880 125 T41.14/97T 345 N 1200 … 1800 550 238 6,90 1,56/1,0 345 0,80 0,700 150 250 F = 1000 0,0800 125 TFL54/96T 358 N 1200 … 1800 700 106 4,60 2,07/1,2 358 0,85 0,900 150 250 F = 1000 0,0680 125 T41.14/97T 378 N 1200 … 1600 800 202 6,35 1,85/1,2 378 0,80 0,750 150 250 F = 1000 0,0680 125 T41.14/97T 388 N 1200 … 1800 730 205 6,40 2,1/1,5 388 0,90 0,750 120 220 F = 1000 0,0680 125 T50.14/97T 508 N 1200 … 1800 800 238 6,90 1,92/1,6 510 0,80 0,600 120 250 F = 1000 0,0530 125 T50.14/97T 509 N 1200 … 1800 800 238 6,90 1,92/1,6 510 0,80 0,600 120 250 F = 1000 0,0530 125 T57.26/97T 588 N 1200 … 1800 1250 320 8,00 2,15/2,4 588 0,80 0,500 200 250 F = 1000 0,0450 125 T50.14/97T 589 N 1200 … 1800 1250 320 8,00 2,15/2,4 588 0,80 0,500 200 250 F = 1000 0,0450 125 T57.26/97T 618 N 1200 … 1400 1250 451 9,50 1,75/2,0 618 0,80 0,420 200 250 F = 1000 0,0450 125 T50.14/97T 648 N 1200 … 1600 1300 605 11,00 2,10/2,5 649 1,00 0,380 120 250 F = 1000 0,0380 125 T60.14/97T 649 N 1200 … 1600 1300 605 11,00 2,10/2,5 649 1,00 0,380 120 250 F = 1000 0,0380 125 T57.26/97T 718 N 1200 … 1600 1500 781 12,50 1,94/3,0 718 0,85 0,350 120 250 F = 1000 0,0380 125 T60.14/97T 719 N 1200 … 1600 1500 781 12,50 1,94/3,0 718 0,85 0,350 120 250 F = 1000 0,0380 125 T57.26/97T 878 N 1200 … 1800 1750 1200 15,50 1,95/3,6 879 0,85 0,270 200 250 F = 1000 0,0320 125 T60.14/97T 879 N 1200 … 1800 1750 1200 15,50 1,95/3,6 879 0,85 0,270 200 250 F = 1000 0,0320 125 T57.26/97T 1049 N 1200 … 1800 1870 1280 16,00 1,34/1,8 1050 0,85 0,225 200 250 F = 1000 0,0265 125 T75.26/97T 1189 N 1200 … 1800 2800 2530 22,50 2,05/5,4 1190 0,90 0,190 200 240 F = 1000 0,0230 125 T75.26/97T 1500 N 1200 … 1800 3500 5611 33,50 2,10/7,0 1500 0,90 0,150 200 240 F = 1000 0,0184 125 T75.26K/99T 1509 N 1200 … 1800 3500 5611 33,50 2,10/7,0 1500 0,90 0,150 200 240 F = 1000 0,0184 125 T75.26/97■ T 1986 N 1200 … 1800 4200 6480 36,00 2,05/8,0 1990 0,90 0,120 200 250 F = 1000 0,0133 125 T100.35/98■ T 1989 N 1200 … 1800 4200 6480 36,00 2,05/8,0 1990 0,90 0,120 200 250 F = 1000 0,0133 125 T100.26/98u T 2080 N 1200 … 1800 4200 6480 36 2,05/8,0 2080 0,9 0,106 200 250 F = 1000 0,0125 125 T100.26K/100■ T 3159 N 1200 … 1800 7000 16245 57 1,37/6,0 3160 0,85 0,082 200 250 F = 1000 0,0085 125 T110.26/98u T 3160 N 1200 … 1800 7000 16245 57 1,37/6,0 3160 0,85 0,082 200 250 F = 1000 0,0085 125 T111.26K/100StacksPresspacksSCR/Diode ModulesIGBT■ Not for new design u New type * Highest voltage on requestExplanations85
Phase Control ThyristorsIGBTSCR/Diode ModulesPresspacksup to 3000 VType V DRM I TRMSM ∫i 2 dt I TSM V T /I T ITAVM V(TO) rT (di/dt) cr tq (dv/dt) cr R thJC T vj max Outline /V RRM V A A2s · kA V/kA A/°C V mΩ A/µs µs V/µs °C/W °C pageV DSM = V DRM 103 10 ms, T vj max 180 ° T vj = T vj = DIN IEC typ. DIN IEC 180 °V RSM = V RRM 10 ms, T vj max el sin T vj max T vj max 747- 6 747-6 el sin+ 100 V T vj max T c =85 °C■ T 271 N 2500 650 245 7 2,35/1,2 270 1,07 0,870 60 300 F = 1000 0,0910 125 TSW41/96T 308 N 2000 … 2600* 550 101 4,5 2,88/1,1 308 1,10 1,600 60 350 F = 1000 0,0560 125 T50.14/97T 458 N 2000 … 2600 1000 405 9 2,75/2,0 459 1,00 0,840 120 300 F = 1000 0,0455 125 T60.14/97T 459 NT57.26/97T 639 N 1800 … 2200 1250 562 10,6 1,88/1,8 640 0,85 0,510 120 400 F = 1000 0,0377 125 T57.26/97T 658 N 2200 … 2600 1500 660 11,5 2,53/2,85 659 1,00 0,500 150 300 F = 1000 0,0330 125 T60.14/97T 659 N 2200 … 2600 1500 660 11,5 2,53/2,85 659 1,00 0,500 150 300 F = 1000 0,0330 125 T57.26/97T 699 N 1800 … 2200 1500 744 12,2 2,32/2,85 699 0,95 0,450 200 300 F = 1000 0,0320 125 T57.26/97T 708 N 1800 … 2200 1500 744 12,2 2,32/2,85 699 0,95 0,450 200 300 F = 1000 0,0320 125 T60.14/97T 709 N 2000 … 2600 1500 845 13 2,84/3,0 700 1,05 0,530 50 300 F = 1000 0,0290 125 T75.26/97T 829 N 2000 … 2600 1800 1201 15,5 1,78/1,8 829 0,95 0,425 50 350 F = 1000 0,0265 125 T75.26/97T 1039 N 1800 … 2200 2200 1711 18,5 1,53/2,0 1039 0,90 0,300 200 300 F = 1000 0,0231 125 T75.26/97T 1218 N 2000 … 2800 2625 2531 22,5 1,52/1,0 1220 1,05 0,330 150 350 F = 1000 0,0160 125 T75.14/97T 1219 N 2000 … 2800 2625 2531 22,5 1,38/1,0 1220 1,00 0,275 150 350 F = 1000 0,0184 125 T75.26/97T 1329 N 1800 … 2200 2600 2645 23 1,13/1,0 1329 0,90 0,234 200 300 F = 1000 0,0184 125 T75.26/97■ T 1589 N 2000 … 2800* 3200 3920 28 2,45/5,0 1589 1,10 0,237 150 400 F = 1000 0,0124 125 T100.26/98u T 1590 N 2000 … 2800* 3200 3920 28 2,45/5,0 1590 1,10 0,237 150 400 F = 1000 0,0125 125 T100.26K/100■ T 1866 N 1800 … 2200 4100 6125 35 2,20/8,0 1869 0,90 0,155 200 300 F = 1000 0,0133 125 T100.35/98■ T 1869 N 1800 … 2200 4100 6125 35 2,20/8,0 1869 0,90 0,155 200 300 F = 1000 0,0133 125 T100.26/98u T 1960 N 1800 … 2200 4100 6125 35 2,20/8,0 1960 0,90 0,150 200 300 F = 1000 0,0125 125 T100.26K/100■ T 2159 N 2200 … 2800 4600 8000 40 2,65/8,8 2159 1,05 0,154 150 400 F = 1000 0,0099 125 T110.26/98T 2160 N 2200 … 2800 4600 8000 40 2,65/8,8 2400 1,05 0,154 150 400 F = 1000 0,0085 125 T111.26K/100■ T 2479 N 2200 … 2800 5100 9460 43,5 1,43/3,0 2480 0,95 0,154 200 400 F = 1000 0,0085 125 T110.26/98T 2480 N 2200 … 2800 5100 9460 43,5 1,43/3,0 2480 0,95 0,154 200 400 F = 1000 0,0085 125 T111.26K/100■ T 2709 N 1600 … 2200 5800 12500 50 2,35/11,0 2709 0,90 0,125 200 300 F = 1000 0,0085 125 T110.26/98■ T 2710 N 1600 … 2200 5800 12500 50 2,35/11,0 2709 0,90 0,125 200 300 F = 1000 0,0085 125 T120.26K/100u T 2810 N 1600 … 2200 5800 12500 50 2,35/11,0 2810 0,90 0,112 200 300 F = 1000 0,0085 125 T111.26K/100T 4301 N 2200 … 2900 9420 41400 91 1,20/4,0 4300 0,77 0,107 300 250 F = 1000 0,0054 125 T150.35K/100T 4771 N 2200 … 2900 10110 41400 91 1,20/4,0 4640 0,77 0,107 300 250 F = 1000 0,0048 125 T150.26K/100■ Not for new design u New type * Highest voltage on requestExplanationsStacks86
Phase Control Thyristorsup to 4500 VType V DRM I TRMSM ∫i 2 dt I TSM V T /I T ITAVM V(TO) rT (di/dt) cr tq (dv/dt) cr R thJC T vj max Outline /V RRM V A A2s · kA V/kA A/°C V mΩ A/µs µs V/µs °C/W °C pageV DSM = V DRM 103 10 ms, T vj max 180 ° T vj = T vj = DIN IEC typ. DIN IEC 180 °V RSM = V RRM 10 ms, T vj max el sin T vj max T vj max 747- 6 747-6 el sin+ 100 V T vj max T c =85 °CT 379 N 4200 800 205 6,4 3,26/1,2 422 1,20 1,600 100 500 F = 1000 0,0330 125 T57.26/97T 729 N 3600 … 4200 1840 1250 15,8 3,40/3,5 730 1,20 0,570 80 400 F = 1000 0,0215 120 T75.26/98T 730 N 3600 … 4200 1840 1250 15,8 3,40/3,5 730 1,20 0,570 80 400 F = 1000 0,0215 120 T75.26K/99T 731 N 3600 … 4400 2010 1280 16 1,86/1,2 910 1,08 0,650 300 500 H = 2000 0,0185 125 T76.26K/99T 869 N 3000 … 3600 2000 1445 17 3,18/3,8 860 1,08 0,500 80 400 F = 1000 0,0210 125 T75.26/97T 901 N 2800 … 3600 2050 1445 17 1,75/1,2 950 1,16 0,494 300 300 F = 1000 0,0185 125 T76.26K/99T 929 N 3000 … 3600 2200 1530 17,5 2,70/3,6 930 1,00 0,430 80 500 F = 1000 0,0215 125 T75.26/97T 1401 N 3600 … 4200 3450 6480 36 1,95/2,0 1600 1,29 0,330 300 350 H = 2000 0,0097 125 T120.35K/100T 1971 N 3600 … 4200 3700 6480 36 1,95/2,0 1730 1,29 0,330 300 350 H = 2000 0,0086 125 T120.26K/100T 1601 N 2800 … 3600 4160 8400 41 1,50/2,0 1920 1,00 0,250 300 300 F = 1000 0,0097 125 T120.35K/100■ T 1929 N 3000 … 3800 4200 6850 37 2,90/8,0 1930 1,08 0,200 150 450 F = 1000 0,0099 125 T110.26/98u T 1930 N 3000 … 3800 4200 6850 37 2,90/8,0 2180 1,08 0,200 150 450 F = 1000 0,0085 125 T111.26K/100T 2001 N 2800 … 3600 4460 8400 41 1,50/2,0 2060 1,00 0,250 300 300 F = 1000 0,0087 125 T120.26K/100T 3401 N 3100 … 3600 8350 37850 87 1,40/4,0 3800 0,82 0,145 300 300 F = 1000 0,0054 125 T150.35K/100T 3801 N 3100 … 3600 8950 37850 87 1,40/4,0 4100 0,82 0,145 300 300 F = 1000 0,0048 125 T150.26K/100T 3101 N 4000 … 4400 6830 34000 83 1,75/4,0 3160 1,01 0,185 300 400 H = 2000 0,0054 125 T150.35K/100IGBTSCR/Diode Modulesup to 5500 VType V DRM I TRMSM ∫i 2 dt I TSM V T /I T ITAVM V(TO) rT (di/dt) cr tq (dv/dt) cr R thJC T vj max Outline /V RRM V A A2s · kA V/kA A/°C V mΩ A/µs µs V/µs °C/W °C pageV DSM = V DRM 103 10 ms, T vj max 180 ° T vj = T vj = DIN IEC typ. DIN IEC 180 °V RSM = V RRM 10 ms, T vj max el sin T vj max T vj max 747- 6 747-6 el sin+ 100 V T vj max T c =85 °CT 1451 N 4800 … 5200 3610 9250 43 1,70/2,0 1690 0,920 0,370 300 450 H = 2000 0,0097 125 T120.35K/100T 1551 N 4800 … 5200 3920 9250 43 1,70/2,0 1830 0,920 0,370 300 450 H = 2000 0,0086 125 T120.26K/100T 2161 N 4800 … 5200 4630 14600 54 1,85/3,0 2170 0,810 0,360 300 450 H = 2000 0,0075 125 T120.35K/100T 2351 N 4800 … 5200 5000 14600 54 1,85/3,0 2360 0,810 0,360 300 450 H = 2000 0,0065 125 T120.26K/100T 2851 N 4800 … 5200 6230 31000 79 1,70/4,0 3000 0,765 0,235 300 600 H = 2000 0,0054 125 T150.35K/100T 3441 N 4800 … 5200 6600 31000 79 1,70/4,0 3200 0,765 0,235 300 600 H = 2000 0,0048 125 T150.26K/100T 4021 N 4800 … 5350 8480 50000 100 1,80/6,0 3920 0,920 0,142 300 550 H = 2000 0,00445 125 T172.35K/101■ Not for new design u New type * Highest voltage on requestPresspacksStacksExplanations87
Phase Control Thyristorsup to 10000 VIGBTSCR/Diode ModulesType V DRM I TRMSM ∫i 2 dt I TSM V T /I T ITAVM V(TO) rT (di/dt) cr tq (dv/dt) cr R thJC T vj max Outline /V RRM V A A2s · kA V/kA A/°C V mΩ A/µs µs V/µs °C/W °C pageV DSM = V DRM 103 10 ms, T vj max 180 ° T vj = T vj = DIN IEC typ. DIN IEC 180 °V RSM = V RRM 10 ms, T vj max el sin T vj max T vj max 747- 6 747-6 el sin+ 100 V T vj max T c =85 °C■ T 201 N 6000 … 7000 510 88,2 4,2 3,40/0,5 245 1,290 4,180 300 600 H = 2000 0,0430 125 T58.26K/99u T 281 N 6000 … 6500 600 115 4,8 2,75/0,5 280 1,350 2,800 150 1000 F = 1000 0,0430 125 T58.26K0/99■ T 501 N 6000 … 7000 1260 845 13 2,65/1,0 640 1,300 1,350 300 600 H = 2000 0,0185 125 T76.26K/99■ T 551 N 6000 … 7000 1260 845 13 2,65/1,0 600 1,300 1,350 300 600 H = 2000 0,0205 125 T76.35K/99u T 571 N 6000 … 6500 1150 442 9,4 2,75/1,0 540 1,350 1,400 150 1000 F = 1000 0,0230 125 T76.26K0/99T 1081 N 6000 … 7000 2830 5780 34 2,70/2,0 1330 1,180 0,759 300 600 H = 2000 0,0086 125 T120.26K/100T 1201 N 6000 … 7000 2600 5780 34 2,70/2,0 1230 1,180 0,759 300 600 H = 2000 0,00970 125 T120.35K/100T 1651N 6000 … 7000 3610 11500 48 2,65/3,0 1685 1,220 0,490 300 600 H = 2000 0,00750 125 T120.35K/100T 1851 N 6000 … 7000 3940 11500 48 2,65/3,0 1850 1,220 0,490 300 600 H = 2000 0,00650 125 T120.26K/100T 1901 N 7000 … 8000 4520 21100 65 3,00/4,0 2130 1,240 0,440 300 550 H = 2000 0,00540 125 T150.35K/100T 2251N 7000 … 8000 4840 21100 65 3,00/4,0 2280 1,240 0,440 300 550 H = 2000 0,00480 125 T150.26K/100T 2871 N 7500 … 8000 6060 40500 90 2,95/5,0 2680 1,267 0,336 300 550 H = 2000 0,00445 125 T172.35K/101PresspacksLight TriggeredThyristorsType V BO V RRM V I TRMSM ∫i 2 dt I TSM V T /I T ITAVM V(TO) rT (di/dt) cr tq (dv/dt) cr R thJC T vj max Outline /V V RSM = V RRM A A2s · kA V/kA A/°C V mΩ A/µs µs V/µs °C/W °C page+ 100 V 103 10 ms, T vj max 180 ° T vj = T vj = DIN IEC typ. DIN IEC 180 °10 ms, T vj max el sin T vj max T vj max 747- 6 747-6 el sinT vj max T c =85 °CT 553 N 6500 7000 1200 684 11,7 2,65/1,0 550 1,30 1,350 300 600 H = 2000 0,0200 120 T76.35L/101T 1503 N 7500 7500 … 8000 3900 15125 55 3,00/4,0 1770 1,24 0,440 300 550 H = 2000 0,0063 120 T150.40L/101T 2563 N 7500 7500 … 8000 5600 40500 90 2,95/5,0 2520 1,28 0,278 300 550 H = 2000 0,0048 120 T172.40L/101T 4003 N 5200 5200 5600 50000 100 1,80/5,0 3480 0,92 0,142 300 500 H = 2000 0,0048 120 T172.40L/101■ Not for new design u New type * Highest voltage on requestExplanationsStacks88
Fast Thyristorsup to 600 VType V DRM I TRMSM I TSM V T /I T V (TO) rT (di/dt) cr tq (dv/dt) cr V GT V GT R thJC T vj max Outline /V RRM V A kA V/kA V mΩ A/µs µs V/µs V mA °C/W °C pageV DSM = V DRM 10 ms, T vj max T vj = T vj = DIN IEC typ. DIN IEC T vj = T vj = 180 °V RSM = V RRM T vj max T vj max T vj max 747- 6 747-6 25 °C 25 °C el sin+ 50 VVA 158 S12 TBF 1200 15 (50) 400 2,45 2,60/0,6 1,3/2,0 400 B ≤ 10 F = 1000 2,70 300 0,117 125 T41.14/97A 358 S10 TDF 1000 15 (50) 800 5 2,75/1,5 1,3/0,9 500 D ≤ 15 F = 1000 2,70 300 0,053 125 T50.14/97A 358 S12 TBF 1200 15 (50) 800 5 2,75/1,5 1,3/0,9 500 B ≤ 10 F = 1000 2,70 300 0,053 125 T50.14/97A 438 S12 TDF 1200 15 (50) 900 5,5 2,10/1,5 1,1/0,6 500 D ≤ 15 F = 1000 2,70 300 0,053 125 T50.14/97up to 1400 VType V DRM I TRMSM I TSM V T /I T V (TO) rT (di/dt) cr tq (dv/dt) cr V GT V GT R thJC T vj max Outline /V RRM V A kA V/kA V mΩ A/µs µs V/µs V mA °C/W °C pageV DSM = V DRM 10 ms, T vj max T vj = T vj = DIN IEC typ. DIN IEC T vj = T vj = 180 °V RSM = V RRM T vj max T vj max T vj max 747- 6 747-6 25 °C 25 °C el sin+ 50 VVT 408 F11 TFC 1100 750 6,4 2,20/1,4 1,20 0,63 200 F ≤ 25 C = 500 2,20 250 0,053 125 T50.14/97T 408 F12 TSB 1200 750 6,4 2,20/1,4 1,20 0,63 200 S ≤ 18 B = 50 2,20 250 0,053 125 T50.14/97T 408 F12 TSC 1200 750 6,4 2,20/1,4 1,20 0,63 200 S ≤ 18 C = 500 2,20 250 0,053 125 T50.14/97T 1052 S12 TDC 1200 2200 20 2,70/4,0 1,45 0,30 400 D ≤ 15 C = 500 2,20 300 0,018 125 T75.26K/99up to 2000 VType V DRM I TRMSM I TSM V T /I T V (TO) rT (di/dt) cr tq (dv/dt) cr V GT V GT R thJC T vj max Outline /V RRM V A kA V/kA V mΩ A/µs µs V/µs V mA °C/W °C pageV DSM = V DRM 10 ms, T vj max T vj = T vj = DIN IEC typ. DIN IEC T vj = T vj = 180 °V RSM = V RRM T vj max T vj max T vj max 747- 6 747-6 25 °C 25 °C el sin+ 50 VVT 930 S16 TFB 1600 2000 18 2,70/3,5 1,35 0,33 250 F ≤ 25 B = 50 2,2 250 0,021 125 T75.26K/99T 930 S16 TKC 1600 2000 18 2,70/3,5 1,35 0,33 250 K ≤ 40 C = 500 2,2 250 0,021 125 T75.26K/99T 930 S18 TKB 1800 2000 18 2,70/3,5 1,35 0,33 250 K ≤ 40 B = 50 2,2 250 0,021 125 T75.26K/99T 930 S18 TMC 1800 2000 18 2,70/3,5 1,35 0,33 250 M ≤ 50 C = 500 2,2 250 0,021 125 T75.26K/99T 930 S20 TMC 2000 2000 18 2,70/3,5 1,35 0,33 250 M ≤ 50 C = 500 2,2 250 0,021 125 T75.26K/99StacksPresspacksSCR/Diode ModulesIGBTFast Asymmetric ThyristorsType V DRM V RRM I TRMSM I TSM V T/ I T V (TO) /r T (di/dt) cr t q (dv/dt) cr VGT I GT R thJC T vj max Outline /V V A kA V/kA V/mΩ A/µs µs V/µs V mA °C/W °C pageV DSM = V DRM (V RRM(C) ) 10 ms T vj max T vj = DIN IEC typ. DIN IEC T vj = T vj = 180 °t p = T vj max T vj max 747 - 6 747 - 6 25 °C 25 °C el sin1 µsA 158 S12 TBF 1200 15 (50) 400 2,45 2,60/0,6 1,3/2,0 400 B ≤ 10 F = 1000 2,70 300 0,117 125 T41.14/97A 358 S10 TDF 1000 15 (50) 800 5,00 2,75/1,5 1,3/0,9 500 D ≤ 15 F = 1000 2,70 300 0,053 125 T50.14/97A 358 S12 TBF 1200 15 (50) 800 5,00 2,75/1,5 1,3/0,9 500 B ≤ 10 F = 1000 2,70 300 0,053 125 T50.14/97ExplanationsA 438 S12 TDF 1200 15 (50) 900 5,50 2,10/1,5 1,1/0,6 500 D ≤ 15 F = 1000 2,70 300 0,053 125 T50.14/97All Fast Thyristors and all Fast AsymmetricThyristors not for new design89
ExplanationsStacksPresspacksSCR/Diode ModulesIGBTOverview Rectifier in Disc HousingsV RRM – Concept9000 VD471ND2601NHD2601N6800 VD711ND1481ND3001N5800 VD3041N5000 VD6001N4800 V 1500 V RMS Ceramic DiscD749N4600 VD1800ND1809N4500 VEpoxy Disc4400 VD3501N4000 VD849N3600 V 1100 V D269NRMS3400 V3200 V2800 VD748ND2209N D2200ND4870N2600 VD1029N2400 VD2659N D2650N2200 V2000 VHigh Power-Discs690 V D660NRMSD428N550 V RMSD4201N1800 VD798N D1049N1600 VEpoxy-Discs1400 V 400 V RMS1200 V600 V D448N D758ND2228N D4457N D5807N/D5809N D8320N400 VCase fl41 mm 50 mm 57/60 mm 75 mm 100 mm111 mm 120 mm 150 mm90
Rectifier Diodesup to 800 VType V RRM I FRMSM I FSM ∫i 2 dt I FAVM /T c V (TO) r T R thJC T vj max Outline /V A kA A 2 s ·10 3 A/°C V mΩ °C/W °C pageV RSM = 10 ms, 10 ms 180° sinus T vj = T vj = 180°V RRM + 50 V T vj max T vj max T vj max T vj max el sinIGBTD 255 N 200 … 800* 400 4,6 105,8 255/110 0,65 0,8500 0,2300 180 DSW27/102D 255 K 200 … 800* 400 4,0 80 255/75 0,65 0,8500 0,3450 180 DSW27/102D 448 N 200 … 800* 710 5,1 130 450/122 0,70 0,5100 0,1020 180 D41.14/104D 758 N 400 … 800* 1195 8,8 387,2 760/115 0,70 0,3100 0,0670 180 D41.14/104D 2228 N 200 … 600 4000 28,5 4061 2230/110 0,70 0,0975 0,0254 180 D60.14/104D 2898 N 400 … 600 6100 32,3 5200 2894/100 0,66 0,0600 0,0254 180 D60.14/104D 4457 N 400 … 600 7000 52 13500 4460/111 0,70 0,0470 0,0128 180 D60.8/104D 5807 N 400 … 600 9100 70 24500 5800/108 0,70 0,0400 0,0098 180 D73.8/105D 5809 N 400 … 600 9100 70 24500 5800/58 0,70 0,0400 0,0166 180 D75.26/105D 6247 N 400 … 600 9800 52 13500 6242/68 0,66 0,0470 0,0130 180 D60.8/104■ D 8019 N 200 … 600 13300 95 45000 8020/56 0,70 0,0270 0,0125 180 D100.26/105u D 8320 N 200 … 600 95 45000 8320/56 0,70 0,0240 0,0125 180 D100.26Ko/107D 8407 N 400 … 600 13200 70 24500 8408/64 0,66 0,0360 0,0098 180 D73.8/105SCR/Diode Modulesup to 1800 VType V RRM I FRMSM I FSM ∫i 2 dt I FAVM /T c V (TO) r T R thJC T vj max Outline /V A kA A2s ·103 A/°C V mΩ °C/W °C pageV RSM = 10 ms, 10 ms 180° sinus T vj = T vj = 180°V RRM + 100 V T vj max T vj max T vj max T vj max el sinPresspacksD 452 N 1200 … 1800 710 10,8 583,2 450/130 0,77 0,48 0,0855 180 DFL54/103D 452 K 1200 … 1800 710 10,8 583,2 450/130 0,77 0,48 0,0855 180 DFL54/103D 798 N 1200 … 1800* 1650 11,8 696 800/130 0,81 0,28 0,0460 180 D50.14/104D 1049 N 1200 … 1800 2590 18,5 1710 1050/130 0,81 0,17 0,0380 180 D57.26/104up to 3000 VType V RRM I FRMSM I FSM ∫i 2 dt I FAVM /T c V (TO) r T R thJC T vj max Outline /V A kA A2s ·103 A/°C V mΩ °C/W °C pageV RSM = 10 ms, 10 ms 180° sinus T vj = T vj = 180°V RRM + 100 V T vj max T vj max T vj max T vj max el sinStacksD 121 N 1200 … 2000 360 2,6 33,8 120/130 0,72 1,90 0,324 180 DSW27/102D 121 K 1200 … 2000 330 2,4 28,8 120/130 0,72 1,90 0,434 180 DSW27/102D 251 N 1200 … 2000 400 5,3 140,5 250/130 0,80 0,85 0,151 180 DSW27/102DFL36/102D 251 K 1200 … 2000 400 4,7 110,5 250/102 0,80 0,85 0,236 180 DSW27/102DFL36/102D 400 N 1600 … 2000 710 9,8 480,2 400/130 0,70 0,62 0,095 180 DSW41/102D 400 K 1600 710 9,8 480,2 400/130 0,70 0,62 0,095 180 DSW41/102D 428 N 1200 … 2000 840 6 180 430/139 0,81 0,54 0,069 180 D41.14/104D 660 N 1800 … 2200 1435 10,25 525 660/130 0,70 0,50 0,050 180 D41.14K/106D 748 N 2000 … 2800 1260 9 405 750/100 0,83 0,52 0,045 160 D50.14/104D 1029 N 2200 … 2600 2040 14,5 1051 1030/100 0,82 0,28 0,038 160 D57.26/104Explanations■ Not for new design u New type * Highest voltage on request91
Rectifier DiodesIGBTup to 3000 VType V RRM I FRMSM I FSM ∫i 2 dt I FAVM /T c V (TO) r T R thJC T vj max Outline /V A kA A2s ·103 A/°C V mΩ °C/W °C pageV RSM = 10 ms, 10 ms 180° sinus T vj = T vj = 180°V RRM + 100 V T vj max T vj max T vj max T vj max el sinSCR/Diode ModulesD 1030 N 2200 … 2600 2040 14,5 1051 1030/100 0,82 0,28 0,038 160 D57.26K/106D 2200 N 2000 … 2800 4900 35 6125 2200/100 0,83 0,145 0,0170 160 D75.26K/106D 2209 N 2000 … 2800 4900 35 6125 2200/100 0,83 0,145 0,0170 160 D75.26/105D 2650 N 2000 … 2400 4710 33,5 5611 2650/100 0,82 0,148 0,0169 180 D75.26K/106D 2659 N 2000 … 2400 4710 33,5 5611 2650/100 0,82 0,148 0,0169 180 D75.26/105D 4201 N 1600 … 2200 11200 73,5 27000 4830/100 0,668 0,081 0,0092 160 D120.35K/108■ D 4709 N 2000 … 2800 8400 60 18000 4700/100 0,83 0,070 0,0080 160 D110.26/105u D 4810 N 2000 … 2800 8400 60 18000 4810/100 0,83 0,059 0,0080 160 D111.26K/107up to 5000 VType V RRM I FRMSM I FSM ∫i 2 dt I FAVM /T c V (TO) r T R thJC T vj max Outline /V A kA A2s ·103 A/°C V mΩ °C/W °C pageV RSM = 10 ms, 10 ms 180° sinus T vj = T vj = 180°V RRM + 100 V T vj max T vj max T vj max T vj max el sinPresspacks■ D 269 N 3400 … 3600 550 4 80 270/100 0,86 1,54 0,098 150 D57.26/98D 475 N 3600 745 10,9 594 475/100 0,765 0,612 0,085 160 DSW41.1/102D 749 N 3600 … 4800* 1540 11 605 750/100 0,85 0,65 0,039 160 D57.26/104D 849 N 2800 … 4000* 1790 12,8 819 850/100 0,84 0,485 0,038 160 D57.26/104D 850 N 2800 … 4000* 1790 12,8 819 850/100 0,84 0,485 0,038 160 D57.26K/106D 1809 N 3200 … 4800 3850 27,5 3781 1800/100 0,85 0,253 0,0169 160 D75.26/105D 1800 N 3200 … 4800 3850 27,5 3781 1800/100 0,85 0,253 0,0169 160 D75.26K/106D 3501 N 3200 … 4200 8200 56 15680 3690/100 0,734 0,133 0,0092 160 D120.35K/108u D 6001 N 4500 … 5000 13000 110 60500 6070/100 0,8 0,09 0,0046 160 D150.26K/108Stacksup to 10000 VType V RRM I FRMSM I FSM ∫i 2 dt I FAVM /T c V (TO) r T R thJC T vj max Outline /V A kA A2s ·103 A/°C V mΩ °C/W °C pageV RSM = 10 ms, 10 ms 180° sinus T vj = T vj = 180°V RRM + 100 V T vj max T vj max T vj max T vj max el sinExplanationsD 711 N 5800 … 6800 1670 10,5 550 790/100 0,840 0,870 0,03150 160 D58.26K/106D 1481 N 5800 … 6800 3610 24,5 3000 1650/100 0,750 0,420 0,01580 160 D76.26K/106D 3001 N 5800 … 6800 6340 53 14040 2900/100 0,840 0,216 0,00920 160 D120.35K/108D 3041N 5800 … 6800 6620 53 14040 2900/100 0,840 0,216 0,00855 160 D120.26K/107D 471 N 8000 … 9000 1200 10 500 565/100 1,040 1,780 0,03150 160 D58.26K/106D 2601 N 8500 … 9000 4820 50 12500 2240/100 0,944 0,412 0,00855 160 D120.26K/107■ Not for new design u New type * Highest voltage on request92
GCT – Freewheeling DiodesType V RRM V (D)D *) I (FSM) ∫i 2 dt V(F)/I(FM) I (RM) Q (rr) R thJC T vj max Outline /V kV kA A 2 s · 10 3 V/2,5 kA A mAs °C/W °C pageT c = 25 sin, 10 ms sin, 10 ms T vj = T vj max di/dt = di/dt =1000 A/µs 1000 A/µstyp. T vj max T vj max sin I (FM) = 2,5 kA I (FM) = 2,5 kA DCT vj = T vj max T vj = T vj maxD 911 SH 4500 2,8 17 1445 6 1200**) 2,8**) 0,01 140 D100.26K/107D 1031 SH 4500 2,8 23 2645 4,2 1500**) 3,5**) 0,01 140 D100.26K/107D 1121 SH 4500 2,8 17,5 1530 5,6 1200**) 3,5**) 0,0075 140 D120.26K/107D 1331 SH 4500 2,8 28 3920 4,2 1500**) 3,5**) 0,0075 140 D120.26K/107u D 1961 SH 4500 2,8 40 8000 2,5 2250**) 12,0**) 0,0075 140 D120.26K/107D 931 SH 6500 3,2 16 1280 5,6 1300**) 3,5**) 0,01 140 D100.26K/107D 1131 SH 6500 3,2 22 2400 5,6 1300**) 3,5**) 0,0075 140 D120.26K/107D 1951 SH 6500 3,2 44 9680 4 1800**) 5,0**) 0,0045 140 D150.26K/108*) Estimate failure rate l ~ 100 fit **) Clamp circuit L = 0,25 µHGTO – Freewheeling DiodesType V (DRM) V (D)D *) I (FSM) ∫i 2 dt V (F) /I (FM) I (RM) **) Q (rr) **) (-di/dt) com R thJC T vj max Outline /V kV kA A 2 s · 10 3 V/2,5 kA A mAs a/ms °C/W °C pageT c = 25 sin, 10 ms sin, 10 ms T vj = T vj max di/dt = di/dt =typ. T vj max T vj max sin 250 A/ms 250 A/ms DCI (FM) = 1 kA I (FM) = 1 kAT vj = T vj max T vj = T vj maxD 1170 S 2000, 2500 1,25 24 2880 2,62/6,4 580 1,70 0,0184 120 D75.26K/106D 721 S 3500 … 4500 2,00 18 1130 3,50/2,5 600 1,70 500 0,0180 125 D76.26K/107D 1461 S 3500 … 4500 2,00 28 5120 2,50/2,5 840 2,80 500 0,0125 140 D100.26K/107D 1251 S 4500 2,50 18 1620 2,50/2,5 800 3,00 500 0,0100 140 D76.14K/107D 921 S 4500 2,50 28 5120 2,60/2,5 700 2,80 500 0,0125 140 D100.26K/107D 1381 S 4500 3,00 28 5120 2,60/2,5 700 2,80 500 0,0125 140 D100.26K/107IGBTSCR/Diode ModulesPresspacks*) Estimate failure rate l ~ 100 fit GTO-Snubber **) V (R) = 0,5 V (RRM) , V (RM) = 0,8 V (RRM)GTO Snubber Diodes and general useType V (RRM) VR(cr) I(FSM) V(F)/I(FM) VFRM R(th)JC Tvj max Outline /V V kA V/kA typ. V °C/W °C page1) sin, 10 ms sin, 10 ms di/dt = DCTvj = Tvj max Tvj = Tvj max 1000 A/µsTvj = Tvj maxD 170 S 2500 1500 3,70 2,30/0,8 0,1800 140 DSW27.1/102D 170 U 2500 1500 3,15 2,15/0,65 0,2500 140 DSW27.1/102D 228 S 2500 1500 3,20 2,12/0,5 0,0750 125 D60.14/104D 56 S 4500 3000 1,35 4,50/0,32 145 0,2450 125 DSW27.2/102D 56 U 4500 3000 1,20 4,15/0,28 75 0,3250 125 DSW27.2/102D 291 S 3500 … 4500 3200 4,50 4,15/1,2 145 0,0400 125 D58.26K/106D 841 S 4500 3200 15,00 3,50/2,5 75 0,0100 125 D76.14K/107snubberless:D 371 S 4500 3200 6,00 3,90/1,2 150 0,0350 125 D58.26K/106D 801 S 4500 3200 14,00 3,70/2,5 85 0,0100 125 D76.14K/107D 901 S 3500 … 4500 2500 21,50 3,50/2,5 70 0,0125 125 D100.26K/107StacksExplanations1) Maximum permissible link voltage, GTO snubber diode93
Fast Rectifier DiodesExplanationsStacksPresspacksSCR/Diode ModulesIGBTup to 1000 VType V RRM I FRMSM I FSM ∫i2dt I FAVM /T c V(TO) rT I RM R thJC T vj max Outline /V A kA A 2 s ·103 A/°C V mΩ A °C/W °C pageV RSM = V RRM 10 ms 10 ms 180° sinus T vj = T vj = T vj max 180 °+ 100 V T vj max T vj = T vj max T vj max i F = I FAVM , el sinT vj max d iF /d t =50 A/µsD 648 S 800 … 1000 1400 10,1 510,05 648/100 1,05 0,43 82 0,044 150 D50.14/104D 649 S 800 … 1000 1400 10,1 510,05 650/96 1,05 0,43 82 0,048 150 D57.26/104up to 1400 VType V RRM I FRMSM I FSM ∫i2dt I FAVM /T c V(TO) rT I RM R thJC T vj max Outline /V A kA A2s ·103 A/°C V mΩ A °C/W °C pageV RSM = V RRM 10 ms 10 ms 180° sinus T vj = T vj = T vj max 180 °+ 100 V T vj max T vj = T vj max T vj max i F = I FAVM , el sinT vj max d iF /d t =50 A/µsD 188 S 1000 290 1,9 18,05 185/100 1,00 1,80 80 0,150 150 D41.14/104D 238 S 1200 455 3,2 51,2 238/85 1,45 1,10 45 0,080 125 D41.14/104D 368 S 1000 … 1400 730 5,2 135,2 368/100 1,00 0,80 102 0,080 150 D41.14/104D 658 S 1000 … 1400 1400 10,1 510,05 658/100 1,00 0,45 122 0,044 150 D50.14/104D 659 S 1000 … 1400 1400 10,1 510,05 660/95 1,00 0,45 122 0,048 150 D57.26/104up to 2600 VType V RRM I FRMSM I FSM ∫i2dt I FAVM /T c V(TO) rT I RM R thJC T vj max Outline /V A kA A2s ·103 A/°C V mΩ A °C/W °C pageV RSM = V RRM 10 ms 10 ms 180° sinus T vj = T vj = T vj max 180 °+ 100 V T vj max T vj = T vj max T vj max i F = I FAVM , el sinT vj max d iF /d t =50 A/µsD 170 S 2500 400 3,70 68,45 170/85 1,10 1,400 340 3) 0,1900 140 DSW27.1/102D 170 U 2500 330 3,15 49,6 170/64 1,10 1,500 340 3) 0,2600 140 DSW27.1/102D 228 S 2200, 2500 450 3,20 51,2 228/85 1,18 1,800 280 0,0800 125 D41.14/104D 348 S 1600 … 2000 645 4,60 105,8 348/100 1,00 0,900 160 0,0800 150 D41.14/104D 438 S 1600 … 2000 740 5,30 140,5 440/100 1,14 0,725 770 4) 0,0590 150 D41.14/104D 440 S 2000 740 5,30 140,5 440/100 1,14 0,725 770 4) 0,0590 150 D57.26K/106D 675 S 2000, 2500 1200 8,50 361 675/85 1,25 0,500 860 5) 0,0390 140 D57.26K/106D 689 S 2000 … 2600 1600 11,50 661,25 690/100 1,00 0,500 230 0,0390 150 D57.26/104D 690 SD57.26K/106D 1169 S 2500 3360 24,00 2880 1170/85 1,16 0,210 580 6) 0,0194 125 D75.26/104D 1170 S 2000, 2500 3360 24,00 2880 1170/85 1,16 0,210 580 6) 0,0194 125 D75.26K/106up to 6000 VType V RRM I FRMSM I FSM ∫i2dt I FAVM /T c V(TO) rT I RM R thJC T vj max Outline /V A kA A2s ·103 A/°C V mΩ A °C/W °C pageV RSM = V RRM 10 ms 10 ms 180° sinus T vj = T vj = T vj max 180 °+ 100 V T vj max T vj = T vj max T vj max i F = I FAVM , el sinT vj max d iF /d t =50 A/µsD 56 S 4500 160 1,35 9,1 56/85 1,64 8 230 2) 0,26 125 DSW27.2/102D 56 U 4000, 4500 140 1,2 7,2 56/73 1,64 8 230 2) 0,34 125 DSW27.2/1021) iFM = 225 A, -diF/dt = 100 A/µs 2) iFM = 150 A, - diF/dt = 200 A/µs 3) iFM = 500 A, - diF/dt = 200 A/µs4) iFM = 500 A, - diF/dt = 250 A/µs 5) iFM = 1600 A, - diF/dt = 600 A/µs 6) iFM = 1000 A, - diF/dt = 250 A/µs94
Avalanche Rectifier DiodesType V RRM I FRMSM I FSM ∫i 2 dt I FAVM /T c V (TO) r T V (BR) R thJC T vj max Outline /V A kA A2s ·10 3 A/°C V mΩ A °C/W °C pageV RSM = 10 ms 10 ms 180° sinus T vj = T vj = min. 180 °V RRM T vj max T vj = T vj max T vj max el sin+ 100 V T vj maxD 126 A 45 4500 315 2,3 26,45 126/100 0,86 3,2 4800 0,257 160 DSW27.2/102200/35D 126 B 45 4500 300 2,1 22 126/80 0,86 3,2 4800 0,337 160 DSW27.2/102190/9DD 126 A 45 K-B9* 4500 220 2,3 26,45 128/100 0,86 3,2 4800 0,060 160 DP30.1/81* Non isolated moduleWelding Diodesup to 600 VType V RRM I FRMSM I FSM ∫i 2 dt I FAVM /T c V (TO) r T R thJC T vj max Outline /V A kA A 2 s ·10 3 A/°C V mΩ °C/W °C pageV RSM = 10 ms 10 ms 180° sinus T vj = T vj = 180 °V RRM T vj max T vj = T vj max T vj max el sin+ 50 V T vj max25 DN 06 600 1800 12,75 813 1145/155 0,70 0,188 0,01740 180 25DN06/10438 DN 06 600 6100 32,3 5200 3885/120 0,66 0,060 0,01240 180 38DN06/10446 DN 06 600 8000 52 13500 5100/118 0,70 0,047 0,00935 180 46DN06/10456 DN 06 600 10050 70 24500 6400/116 0,70 0,040 0,00620 180 56DN06/10465 DN 06 600 13300 95 45000 8470/98 0,70 0,027 0,00470 180 65DN06/104IGBTSCR/Diode ModulesPresspacksInsulated CellsType V M V RMS CTI - Iso-Class T c (max) R thCK R thC-C (typ) at clamp. F max Weight Outline /V VDC Value °C °C/W °C/W force kN g pageISO 57/26 6400 2520 250 III a 150 0,010 0,0880 at 12kN 30 260 I57.26/108ISO 72/8 2250 700 250 III a 150 0,005 0,0280 at 20kN 45 130 I72.8/108ISO 75/14 3500 1250 250 III a 150 0,005 0,0435 at 20kN 45 245 I75.14/108ISO 75/26 5900 2250 250 III a 150 0,005 0,0480 at 20kN 45 460 I75.26/108Insulating material: AlNStacksExplanations95
OutlinesTSW27TFL36SCR/Diode ModulesExplanationsStacksPresspacksIGBTM12 x 1,75TSW41TFL54M24 x 1,596
T41.14T50.14SCR/Diode ModulesStacksExplanationsPresspacksIGBTT57.26T60.14T75.14 T75.2697
T100.26 T100.35ExplanationsPresspacksIGBTSCR/Diode ModulesT110.26T110.35StacksT57.26K98
T58.26K T58.26K0ExplanationsPresspacksIGBTT75.26KT76.26KSCR/Diode ModulesT76.26K0StacksT76.35K99
T100.26K T111.26KExplanationsPresspacksIGBTSCR/Diode ModulesT120.26KT120.35KStacksT150.26KT150.35K100
T172.35KT76.35LExplanationsSCR/Diode ModulesStacksPresspacksIGBTT150.40L T172.40L101
DSW27DSW27.1SCR/Diode ModulesPresspacksIGBTM12x1,75M12 x 1,75DSW27.2DFL36StacksDSW41X) = evacuation pipeExplanationsM24x1,5102
DSW41.1DFL54ExplanationsPresspacksStacksSCR/Diode ModulesIGBTX) = evacuation pipe103
D41.14D50.14SCR/Diode ModulesStacksExplanationsPresspacksIGBTD57.26D60.8D60.14D75.14X) = evacuation pipe104
D73.8 D75.26ExplanationsPresspacksIGBTD100.26 D110.26SCR/Diode ModulesStacksX) = evacuation pipe105
D41.14KD57.26KSCR/Diode ModulesStacksExplanationsPresspacksIGBTD58.26KD75.26KX) = evacuation pipe106
D76.14KD76.26KExplanationsPresspacksIGBTD100.26KD100.26.K0SCR/Diode ModulesX) = evacuation pipeD111.26KStacksD120.26KX) = evacuation pipe107
D120.35K D150.26KExplanationsPresspacksIGBTSCR/Diode ModulesI57.26I72.8StacksI75.14I75.26X) = evacuation pipe108
2aIGBT1bDesignation a b c25DN06 Ø 22 Ø 25 3,638DN06 Ø 34 Ø 38 4,046DN06 Ø 43 Ø 46 4,056DN06 Ø 50 Ø 56 5,065DN06 Ø 58 Ø 65 5,0ExplanationsSCR/Diode ModulesStacksPresspacksc21109
IGBTHot Connection Boltaccording to DIN 46200Zyl.-BoltM5*30 DIN 84-5.8M8Nutr B M8DIN 439-MsFastening Torque6 Nm~50with assembled cell23.524.5equal toCell-hights14505.546Possible Outletsfor ThyristorControl Leads20 - 9SCR/Diode ModulesHot Connection Boltacc. to DIN 46200Fastening Torque forthe Nutr: 10 Nm4649V 50-14.45 M F = 4.5 kNV 50-14.60 M F = 6.0 kNNutM10 DIN 934-MSZyl. BoltM6x35 DIN 84-6.8for components ø41mm, h = 14 mmDust-degree 3 (V RRM = 2900 V)Supply Voltage 1 kV effwith assembled cell~60Presspacks256,55526Possible Outletsfor Thyristor-Control Leadsequal toCell-hights14615558V61-14.80 M F = 8.0 kNfor components ø 50mm, h = 14 mmDust-degree 3 (V RRM = 2900 V)Supply Voltage 1 kV effStacksM10Nut M10Fastening Torque 10 NmZyl. BoltM6*45bcfV50..M2Zyl. BoltM5*30 DIN 84-5.823,5 24,5V50..N14405.5Labeling5046Possible Outletsfor Thyristor-Control LeadsV61..M734649V 50-14.45 N F = 4.5 kNV 50-14.60 N F = 6.0 kNZyl. BoltM6*35 DIN 84-5.8for components ø41mm, h = 14 mmDust-degree 3 (V RRM = 2900 V)Supply Voltage 1 kV effV61..NPossible Outletsfor Thyristor-Control Leadsequal toCell-hightsV61-14.80 N F = 8 kNV61-14.100 N F = 10 kNfor components ø 50mm, h = 14 mmDust-degree 3 (V RRM = 2900 V)Supply Voltage 1 kV effaV 72WasherA - BM16BoltDIN 267Zn 8 gl c B (A3K)Clamping plateDIN 267Zn 8 gl c B (A3K)V 89depre-pressed power unitExplanations726.568for components ø60mm, h = 14/26 mmDust-degree 3 (V RRM = 4000/5000 V)Supply Voltage 1,4/1,8 kV eff68Clamping device c l a b d e f F U effV72-14.150M 14 45 68 49 32 36 40,5 15 kN 1400VV72-26.150M 26 60 80 61 44 48 52,5 15 kN 1800VV72-26.80 M 26 60 80 61 44 48 52,5 8 kN 1800VV72-26.120M 26 60 80 61 44 48 52,5 12 kN 1800VV72-26.120MS 26 60 80 61 44 49 53,5 12 kN 2100VIsolating discmounting instructions:-part are to be centered-the clamping plate must be fixedequally with 4 Bolts M10 - 8.8 (not included)until the washer is untight up to a gap of 0.2 mm.-glue untightened washer to avoid noisesFor max. 2 kVeff applicationsDust-degree 3For higher voltage on requestFor components D=75 mmType Mat.-No. clamping force LV89-26.400N 6921 40KN 38V89-26.300N 3586 30KN 39V89-26.170N 12784 17KN 40110
A - Bwasherclamping plateV 176 V 100pre-pressed power unitpre-pressed power unitIGBTIsolating discIsolating discmounting instructions:- part are to be centered- the clamping plate must be fixedequally with 4 Bolts M12 - 8.8 (not included)until the washer is untight up to a gap of 0.2 mm.- glue untightened washer to avoid noisesFor max. 2,5 kVeff applicationsDust-degree 3For components D = 150 mmTypeMat.-No. clamping force LV176-35.650N 19610 65KN 57.5V176-35.500N 19611 50KN 58.5V176-35.400N 19612 40KN 59.5mounting instructions:- part are to be centered- the clamping plate must be fixedequally with 4 Bolts M12 - 8.8 (not included)until the washer is untight up to a gap of 0.2 mm.- glue untightened washer to avoid noisesFor max. 2,5 kVeff applicationsDust-degree 3For components D = 75 mmTypeV100-35.200NMat.-No. clamping force2355120KNSCR/Diode ModulesExplanationsStacksPresspacks111
ExplanationsStacksPresspacksSCR/Diode ModulesIGBT112
Stacks &AssembliesSCR/Diode ModulesIGBTOur bipolar assemblies include thyristors and diodes, water or aircooled heat sinks with optional fans as wells as snubber components in standardconfigurations. The line of power semiconductors includes thyristors anddiodes with current ranges from 60 A to 8000 A at voltage ranges from 200 Vup to 9000 V. Infineon Technologies Bipolar assemblies include thyristors anddiodes with thermal management. Bipolar stacks consist of high power bipolarsemiconductors, water or air cooled heat sinks with optional fans as wellsas snubber components in standard configurations. To provide customizedsolutions water connectors, fans, fuses, snubbers and sensors may be added.The line of power semiconductors includes thyristors and diodes with currentranges from 60 A to 8000 A at voltage ranges from 200 V up to 9000 V.PresspacksGeneral featuresn Bipolar diode and thyristordiscs or modulesn Voltage range up to severalkV effn Current range up to 25 kAn Natural air, forced air(with or without fan), wateror oil coolingn Overvoltage protection circuitsPossible combinationsV AC @ 10 V eff- 690 V effV AC @ 400 V eff- 690 V eff150 A - 1200 AB6C / Natural AIR200 A - 1500 AB6U / Natural AIR200 A - 3500 AB6C / Forced AIR700 A - 10000 AB6U / Forced AIR5000 A - 25000 AM6 / WATER5000 A - 20000 AB6 / WATER100 200 500 1000 2000 5000 10000 20000 50000I c [A]StacksExplanations113
B6C Standard Stackswith Air Cooling 500V/690VIGBTnatural air cooling @ T a = 45°Csupply voltage 500Vrated current device heatsink stack type name with input stack type name with input stack type name withwithout fuses [A] type namesnubber bridge snubber bridge and fuses snubber and fuses530 T588N K0.36S 6T588N16K036B01 – 6T588N16K036B06SCR/Diode Modulesforced air cooling @ T a = 35°Csupply voltage 500Vrated current device heatsink rated current stack type name with input stack type name with input stack type name withwithout fuses [A] type name without fan [A] snubber bridge snubber bridge and fuses snubber and fuses270 TT180N KM14 112 3TT180N16KM14B01 – 3TT180N16KM14B06360 TT250N KM17 166 3TT250N16KM17B01 – 3TT250N16KM17B06540 TT330N KM18 190 3TT330N16KM18B01 – 3TT330N16KM18B061260 T878N K0.17F – 6T878N16K017B01 6T878N16K017B02 6T878N16K017B031860 T1509N K0.08F 639 6T1509N16K008B01 6T1509N16K008B02 6T1509N16K008B032990 T2080N KE02 1133 6T2080N16KE02B01 6T2080N16KE02B02 6T2080N16KE02B033683 T3160N KE02 1305 6T3160N16KE02B01 6T3160N16KE02B02 6T3160N16KE02B034492 T3160N KE01 1834 6T3160N16KE01B01 6T3160N16KE01B02 6T3160N16KE01B03PresspacksStacksforced air cooling @ T a = 35°Csupply voltage 690Vrated current device heatsink rated current stack type name with input stack type name with input stack type name withwithout fuses [A] type name without fan [A] snubber bridge snubber bridge and fuses snubber and fuses320 TT215N KM17 141 3TT215N22KM17B01 – 3TT215N22KM17B06400 TT215N KM18 – 3TT215N22KM18B01 – 3TT215N22KM18B061052 T708N K0.17F – 6T708N22K017B01 6T708N22K017B02 6T708N22K017B031691 T1329N K0.08F 610 6T1329N22K008B01 6T1329N22K008B02 6T1329N22K008B032254 T1590N KE02 898 6T1590N22KE02B01 6T1590N22KE02B02 6T1590N22KE02B032767 T1960N KE02 1102 6T1960N22KE02B01 6T1960N22KE02B02 6T1960N22KE02B033308 T2710N KE02 1191 6T2710N22KE02B01 6T2710N22KE02B02 6T2710N22KE02B035113 T4771N KE01 1955 6T4771N22KE01B01 6T4771N22KE01B02 –Explanations114
B6U Standard Stackswith Air Cooling 500V/690Vnatural air cooling @ T a = 45°Csupply voltage 500Vrated current device heatsink stack type name with input stack type name with inputwithout fuses [A] type namesnubber bridge snubber bridge and fuses683 D428N K0.36S 6D428N16K036B01 6D428N16K036B05IGBTforced air cooling @ T a = 35°Csupply voltage 500Vrated currentwithout fuses [A]devicetype nameheatsink rated currentwithout fan [A]stack type name with inputsnubber bridgestack type name with inputsnubber bridge and fuses333 DD171N KM14 150 3DD171N16KM14B01 3DD171N16KM14B06663 DD350N KM18 – 3DD350N16KM18B01 3DD350N16KM18B061635 D 798N K0,17F – 6D798N16K017B01 6D798N16K017B052159 D1049N K0,08F 923 6D1049N16K008B01 6D1049N16K008B05SCR/Diode Modulesforced air cooling @ T a = 35°Csupply voltage 690Vrated currentwithout fuses [A]devicetype nameheatsink rated currentwithout fan [A]stack type name with inputsnubber bridgestack type name with inputsnubber bridge and fuses314 DD151N KM14 145 3DD151N22KM14B01 3DD151N22KM14B06573 DD261N KM18 – 3DD261N22KM18B01 3DD261N22KM18B061232 D748N K0,17F – 6D748N22K017B01 6D748N22K017B051698 D1029N K0,08F 814 6D1029N22K008B01 6D1029N22K008B052735 D2659N K0,08F 999 6D2659N22K008B01 6D2659N22K008B053358 D2659N K0,05F 1398 6D2659N22K005B01 6D2659N22K005B055318 D4870N KE02 1935 6D4870N22KE02B01 –6367 D4870N KE01 2795 6D4870N22KE01B01 –Type DesignationNo. of switchesSemiconductor (main unit)Heat sinkCircuit topologyOption Key12 TT180N16 KM14 B 016 D1049N16 K008 B 05Circuit topologyB = B6U/B6CW = W3C/W1CA = (B6C)A(B6C)M = M3/M6/M3.2Option Key01 = input snubber bridge02 = TSE snubber03 = TSE snubber with cell fuses04 = TSE snubber with arm fuses05 = input snubber bridge with cell fuses06 = input snubber bridge with arm fusesxx = According specificationOthers on requerstPresspacksStacksExplanations115
Possible Combinations ofDisc Devices and HeatsinksIGBTSCR/Diode Modulesapplicable line BE/KK for air coolingup to voltage = Elements for water coolingV RRM up to per Heatsink7000 V 2500 V 1 K0.05.7F K0.05.7F K0.05.7F K0.05.7F K0.05.7F1 KE01 KE01 KE01 KE01 KE012 KE02 KE02 KE02 KE022 K0.08.7F K0.08.7F K0.08.7F K0.08.7F K0.08.7F6000 V 2000 V 1 K0.05F K0.05F K0.05F K0.05F K0.05F K0.048F K0.048F2K0.08F,K0.92SK0.08F,K0.92SK0.08F,K0.92SK0.08F,K0.92SK0.08F,K0.92S2600 V 1500 V 2, 4, 6 K53, K63 K53, K63 K53, K63 K53, K63 K632200 V 690 V 12K0.12F,K0.36SK0.17F,K0.22FK0.12F,K0.36SK0.17F,K0.22FK0.12F,K0.36SK0.17F,K0.22F2 K0.65S K0.65S K0.65S2 K0.024W K0.024W K0.024W K0.024W K0.024W K0.024W K0.024W2, 4, 6KA20;KC20;KD20KA20;KC20;KD20KA20;KC20;KD20KA20;KC20;KD20KA20;KC20;KD20Outline D41.14 D50.14 D57.26 D60.8 D60.14 D73.8 D75.26 D100.26 D110.26 D120.35T41.14 T50.14 T57.26 T60.14 T75.26 T100.26 T110.26 T120.35 T150.35T110.35 T120.26ExplanationsStacksPresspacks116
ModSTACKExplanationsSCR/Diode ModulesIGBTThe ModSTACK Family includes Infineon Technologies IGBT moduleswith IGBT driver to achieve current ratings from 100 A up to 1600 A at linesupply 690 V AC. The appropriate interfaces and thermal management areincluded. All inverter topologies (B6U+B6I; B6I+B6I etc.) and various convertertopologies are available.General featuresn Modular stack system designed for industrial approved cabinetsn Low inductance DC link with polypropylene or electrolytic capacitorsn Integrated IGBT drivern Voltage signals for control and monitoring (currents, voltages, short circuit,heat sink temperature, failure signals )n Simulated chip temperature available as voltage signaln Liquid or forced air cooling available, fans can be recommendedn Electrical or optical interface for digital control signals availablen Up to 4 units can be operated in parallelPresspacksStacks117
IGBT StacksAvailable combinationsIGBTModSTACK1 ModSTACK2 ModSTACK3 ModSTACK4width x depth x height [mm] 450 x 400 x 376 702 x 540 x 376 1090 x 600 x 345 1106 x 602 x 495Topology B6I B6I B6I + B6I B6I + B6ISCR/Diode ModulesCooling forced air forced air forced air forced airor water or water or water or watermax. current at U DC =400...850V 150 420 800 1600(≅250...530V AC ) (220) A AC (500) A AC (1000) A AC (1600) A ACmax. current at U DC =800...1100V 100 375 700 1600(≅450...690V AC ) (150) A AC (450) A AC (800) A AC (1600) A ACapproximate maximum power 120 kVA 450 kVA 840 kVA 1900 kVA(180 kVA) (540 kVA) (960 kVA) (1900 kVA)PresspacksTopologyAcronym1/2B2IHA1/2B2IHKTopologyAcronymB6I1/2B2I+B6I1/2B2I1/2B2IHK+B6IB2IHB6I+B2IStacksB2IB6I+B6I or2B6I for paralleloperationExplanations118
Examples of implementedModSTACKUp to 400 Vac Irms [A] at fsw [Hz] Remarks SizeOutline/Page6MS0800R12KL42Gxx 460 3000 inverter MS2/1356MS0800R12Kl42Wxx 480 3000 inverter MS2/135Up to 500 Vac Irms [A] at fsw [Hz] Remarks SizeOutline/Page6MS0300R12DLC1Fxx 220 2500 inverter MS1/1346MS0300R12DLC1Gxx 220 2500 inverter MS1/1346MS0300R12DLC1Wxx 250 2500 inverter MS1/13412MS0600R12KL43Gxx 2 x 330 3000 2 inverter parallel MS3/13612MS0600R12KL43Wxx 2 x 350 3000 2 inverter parallel MS3/13612MS0800R12KL43Gxx 2 x 400 3000 2 inverter parallel MS3/13612MS0800R12KL43Wxx 2 x 450 3000 2 inverter parallel MS3/13612MS1200R12KE34Wxx 2 x 600 3000 2 inverter parallel MS4/137Up to 690 Vac Irms [A] at fsw [Hz] Remarks SizeOutline/Page6MS0200R17KE31Gxx 100 2500 inverter MS1/1346MS0300R17KE31Gxx 150 2500 inverter MS1/1346MS0600R17KF62Gxx 250 2250 inverter MS2/1356MS0800R17KF62Gxx 375 1250 inverter MS2/1356MS0800R17KF62Wxx 460 2500 inverter MS2/13512MS0800R17KF63Gxx 300 2250 AC/AC converter MS3/13612MS1200R17KE33Gxx 330 2250 AC/AC converter MS3/13612MS1200R17KE33Gxx 2 x 330 2250 2 inverter parallel MS3/13612MS0800R17KF63Wxx 2 x 400 2500 2 inverter parallel MS3/13612MS1200R17KE34Gxx 650 2250 AC/AC converter MS4/13712MS1200R17KE34Gxx 2 x 600 2250 2 inverter parallel MS4/137IGBTSCR/Diode ModulesPresspacksMod STACK Type Designation System:12 MS 1200R17KE3 4 G xxTopology, no. of switchesStack FamilySemiconductor (main unit)PackageCoolingOption KeyTopology, no. of swiches2 = Halfbridge4 = H-Bridge6 = B6I12 = 2B6I or B6I+B6IStack Family (only IGBT Stacks)MS = ModSTACKPS = PrimeSTACKSemiconductor (main unit)nn = Relevant part of semiconductortypedesignationFurther semiconductorsacc. option keyPackage1 = MS12 = MS23 = MS34 = MS4CoolingE = Natural air coolingG = Air cooled by cabinet fanF = Air cooled by included fanW = Water cooledOption Keyxx = According specificationOthers on requerstGeneral Information: Nominal AC current is rated for a certain switchingfrequency and at Tamb = 45°C for air cooled IGBT stacks and40°C for water cooled stacks. Starting from nominal current a maximumcurrent of 1,2xInom is possible. Higher switching frequenciesresult in a derating of the nominal output current. Other topologiesand ratings possible.Rated currents are based on linear approximations, e.g. for thedevice‘s forward characteristics (vT0 and rT) and disregarding switchinglosses. The intention of this calculation is to receive a quickpre-selection of infineon thyristors and diodes. The calculated datasare based on values given in the respective thyristor/diode device‘sdata sheet. The product datas as well as the datas used in the calculationsmay subject to changes, improvements or corrections withoutprior notice. Calculations are based on linear approximations, e.g.for the device‘s forward characteristics (vT0 and rT). All calculationsare disregarding switching losses unless pointed out separately.Operating conditions may differ from calculation assumptions in severalaspects. Therefore deviations of parameters and assumptionsused for the calculations and the real application may exist. For thesereasons infineon can not take any responsibility or liability for theexactness or validity of the calculated results. The program can notreplace a detailed reflection of the customers application with all ofits operating conditions.StacksExplanations119
PrimeSTACKPresspacksExplanationsSCR/Diode ModulesIGBTThe PrimeSTACK family is a complete switch assembly for power electroniccircuits containing all the necessary components for current, voltage andtemperature measurement based on the established 62mm IGBT modules.Control electronics and power section are separated from each other at thelevel “save isolation”. With several superior monitor functions, PrimeSTACKoffers a self protecting switch function. With PrimeSTACK highly efficient andsafe inverters can be developed very fast with minimum effort for the designer.The product scope covers chip current ratings from 100 A up to 1600 A at 600 V,1200 V or 1700 V.StacksGeneral featuresn 600 V, 1200 V, 1700 V IGBT implementedn EiceDRIVER insiden Based on 62 mm standard modulesn Current sense of every output legn Temperature sense includedn Safe Isolation of control to powern Flexible adaptation to any heat sink120
Available configurationsTwoPACKTwoPACKSizeC2IGBT1700 V IGBTFourPACKSixPACKTwoPACKSizeC3FourPACKSizeC41200 V IGBTSix + OnePACKFourPACKSixPACKTwoPACKTwoPACKTwoPACKSizeC2SizeC3SCR/Diode ModulesFourPACKSizeC4Six + OnePACK600 V IGBTFourPACKSixPACKSix +OnePACKTwoPACKFourPACKTwoPACKTwoPACK100 200 400 600 800 1000 1200 1400 1600I c [A]SizeC2SizeC3SizeC4PresspacksIGBT PrimeSTACK TopologyAcronymhalf bridge, 2packStacksH - bridge, 4pack3 phase bridge, 6pack3 phase bridge +brake, 6pack +chopperExplanations121
PrimeSTACKStacksPresspacksSCR/Diode ModulesIGBTType Implemented Outline Outline /(-V) with voltage sensor IGBT Module pageWith 600V IGBT ModulesIGBT 3 2PS0800R06KE3-2G (-V) FF400R06KE3 C2 air cooling PS_C2G/1372PS1200R06KE3-3G (-V) FF400R06KE3 C3 air cooling PS_C3G/1392PS1600R06KE3-4G (-V) FF400R06KE3 C4 air cooling PS_C4G/1444PS0400R06KE3-3G (-V) FF400R06KE3 C3 air cooling PS_C3G/1396PS0200R06KE3-3G (-V) FF200R06KE3 C3 air cooling PS_C3G/1396PS0300R06KE3-3G (-V) FF300R06KE3 C3 air cooling PS_C3G/1396PS0400R06KE3-3G (-V) FF400R06KE3 C3 air cooling PS_C3G/139With 1200V IGBT ModulesIGBT 2 Fast 2PS0600R12KS4-2G (-V) FF300R12KS4 C2 air cooling PS_C2G/1372PS0900R12KS4-3G (-V) FF300R12KS4 C3 air cooling PS_C3G/1392PS1200R12KS4-4G (-V) FF300R12KS4 C4 air cooling PS_C4G/1414PS0300R12KS4-3G (-V) FF300R12KS4 C3 air cooling PS_C3G/1396PS0300R12KS4-3G (-V) FF300R12KS4 C3 air cooling PS_C3G/139IGBT 3 2PS0400R12KE3-2G (-V) FF200R12KE3 C2 air cooling PS_C2G/1372PS0600R12KE3-2G (-V) FF300R12KE3 C2 air cooling PS_C2G/1372PS0800R12KE3-2G (-V) FF400R12KE3 C2 air cooling PS_C2G/1372PS0900R12KE3-3G (-V) FF300R12KE3 C3 air cooling PS_C3G/1392PS1200R12KE3-3G (-V) FF400R12KE3 C3 air cooling PS_C3G/1392PS1600R12KE3-4G (-V) FF400R12KE3 C4 air cooling PS_C4G/1414PS0150R12KE3-3G (-V) FF150R12KE3G C3 air cooling PS_C3G/1396PS0150R12KE3-3G (-V) FF150R12KE3G C3 air cooling PS_C3G/1396PS0300R12KE3-3G (-V) FF300R12KE3 C3 air cooling PS_C3G/1396PS0400R12KE3-3G (-V) FF400R12KE3 C3 air cooling PS_C3G/1396PS1600R12KE3-FG (-V) FF400R12KE3 3*C4 air cooling PS_C4G/141IGBT 3 2PS0800R12KE3-2GH (-V) FF400R12KE3 C2 air cooling PS_C2G/137with high efficient heat sink 2PS1200R12KE3-3GH (-V) FD400R12KE3 C3 air cooling PS_C3G/1392PS1600R12KE3-4GH (-V) FF400R12KE3 C4 air cooling PS_C4G/1416PS0200R12KE3-3GH (-V) FF200R12KE3 C3 air cooling PS_C3G/1396PS0400R12KE3-3GH (-V) FF400R12KE3 C3 air cooling PS_C3G/1396PS1600R12KE3-FGH (-V) FF400R12KE3 3*C4 air cooling PS_C4G/141With 1700V IGBT ModulesIGBT 3 2PS0400R17KE3-2G (-V) FF200R17KE3 C2 air cooling PS_C2G/1372PS0600R17KE3-2G (-V) FF300R17KE3 C2 air cooling PS_C2G/1372PS0900R17KE3-3G (-V) FF300R17KE3 C3 air cooling PS_C3G/1392PS0800R17KE3-4G (-V) FF200R17KE3 C4 air cooling PS_C4G/1412PS1200R17KE3-4G (-V) FF300R17KE3 C4 air cooling PS_C4G/1414PS0300R17KE3-3G (-V) FF300R17KE3 C3 air cooling PS_C3G/1396PS0300R17KE3-3G (-V) FF300R17KE3 C3 air cooling PS_C3G/139IGBT 3 2PS0600R12KE3-2GH (-V) FF300R17KE3 C2 air cooling PS_C2G/137with high high efficient heat sink 2PS0900R12KE3-3GH (-V) FF300R17KE3 C3 air cooling PS_C3G/1392PS1200R12KE3-4GH (-V) FF300R17KE3 C4 air cooling PS_C4G/1416PS0300R17KE3-3GH (-V) FF300R17KE3 C3 air cooling PS_C3G/139Other PrimeSTACKs on requestExplanationsPrimeSTACK Type Designation System:2 PS 0600 R 12 DLC -3 XTopology (see below)PrimeSTACKRated Current at Tc.maxRated Voltage of Used IGBTChip Type According toSizeOptions (chopper, cooling etc.)DescriptionsG = forced air coolingW = water coolingH = with high efficient heat sink122
OutlinesK 1.1 - M 12G = 0,635 kgK 0.55 - FB 54 - AG = 1,760 kgStacksSCR/Diode ModulesIGBTM82511151139075M123xM85xM81355xM8Presspacks23950685061M67513512050961002139M24x1.5M1245°K0.55 - M 12 G = 1,760 kgK0.55 - M 24 x 1,5 G = 1,760 kg36 36100alternative50 5012036 36Explanations100123
KM 10 KM 11 G = 2,1 kgKM 14G = 3,1 kgKM 17G = 5,3 kgKM 18G = 8,8 kgIGBT610125805.3ca. 8044115101.59615.52020SCR/Diode Modules80±0.1100±0.83510206.211KM 11 H = 120 mmKM 14 H = 180 mmKM 17 H = 300 mmKM 18 H = 500 mmHPresspacks9614.5 Rz25ExplanationsStacks4.213515.296101.5110125134.25.3Rz25124
KA 20.X-VKC 20-XEfor discs Ø 41, 50, 57, 60 mmmaximum clamping force 10 kNsupply voltage 500 Veff25for discs Ø 41, 50, 57, 60 mmmaximum clamping force 10 kNsupply voltage 500 Veff025ExplanationsIGBTStacksPresspacksAnzahl d.Thy./Di.6 (s=14mm)4 (s=14mm)2 (s=14mm)orientation of device at KC20.*-E6 (s=26mm)4 (s=26mm)2 (s=26mm)ATyp-KA20.6-..-KA20.4-..-KA20.2-..-KA20.62-..-KA20.42-..-KA20.22-..L1370280190445325210L225916877331216101SCR/Diode Modules7290221491(115)549 (73)L191(115)634(46)5L249 (73)192 (240)49 (73)101 (125)20 3260451411.58585210M8Connection of terminalsmust be flexibleConnection of terminalsmust be flexible40(...) for devices s=26729073 (85)5L2L173 (85)45 (57)15206161 (185)K88 (103)603201422ÿ11.5148521085M8Connection of terminalsmust be flexibleConnection of terminalsmust be flexible45(...) for devices s=26Anzahl d.Thy./Di.3 (s=14mm)2 (s=14mm)1 (s=14mm)3 (s=26mm)2 (s=26mm)1 (s=26mm)Typ-KC20-3E-KC20-2E-KC20-1E-KC20-3E-KC20-2E-KC20-1EL1325250175360275190L22151426925116681125
KD 20.X-Vfor discs Ø 41, 50, 57, 60 mmmaximum clamping force 10 kNsupply voltage 500 VeffK 0.024 Wfor W1C-circuitsG = 3 kgIGBT25M12ohneRohrnippelgez.SCR/Diode Modules(...) for devices s=26L2L1TypAnzahl d.Thy./Di.30520299377250123415310205490360230-KD20.6-..-KD20.4-..-KD20.2-..-KD20.62-..-KD20.42-..-KD20.22-..6 (s=14mm)4 (s=14mm)2 (s=14mm)6 (s=26mm)4 (s=26mm)2 (s=26mm)M8Presspacks14ÿ 11.522907285852102060321 55l=*)152TemperatureSwitch1161ø1222830°4.214150656.52626271780*) Device hight 14 mm: l=60mmDevice hight 26 mm: l=72mm45for discs Ø 50, 57, 60, 75 mmConnection of terminalsmust be flexible14Connection of terminalsmust be flexibleK 0.024 Wfor B- and M-circuitsG = 3 kgø1226 1745 (57)62)Stacks103 (127)60 (84)118 (142)221(269)18515017 26142) 2) 1417 263)26802760 (84)L2L160 40230Explanations103 (127)560 (84)1)ohneRohrnippelgez.for discs Ø 50, 57, 60, 75 mm3)55l=*)152*) Device hight 14 mm: l=60mmDevice hight 26 mm: l=72mm126
260240K 53 VG = 17 kg#10.220 20300163.560M8 - 20 tief1409735IGBTM12for discs Ø 110, 120 mmK 63 V35 10107179325224ø1440120193.540204020ø12Example: Depending on applied components there may be different busbar dimensions.G = 30 kgSCR/Diode ModulesPresspacks20#10.280M8 - 20 tiefM1235for discs Ø 150 mm10116197242160ø1420 4020 40 4016040ø1255Example: Depending on applied components there may be different busbar dimensions.StacksExplanations127
KW 50 KW 60ExplanationsStacksPresspacks259,8IGBT9,866ø11,52595ø11,580SCR/Diode ModulesKW 70-T36925060483112124219.82538739210411.5584 x M6 (Befestigungsgew.)5870128
KW 30KW61ExplanationsSCR/Diode ModulesStacksPresspacksIGBTKW65129
K O.05 F/K 0.05.7 FG = 9 kgK 0.08 F/K 0.08.7 FG = 9 kgfor discs Ø 50,60, 57, 75 mmfor discs Ø 50,60, 57, 75 mmIGBTflat connectorflat connectorSCR/Diode Modulesinsulation plateK 0.12 Finsulation plateG = 2,5 kgfor discs Ø 41,50, 60 mmPresspacksflat connectorG HKGHKStacks246.5180flat connector6,3x0,8621054HK GG HKK 0.048 F296261243195G = 9 kgfor discs Ø 100,110 mm78125159166.56.6D5215flat connector 6.3x0.8B91118030 301782322536.630insulation plateC12.5insulation plateAK 0.17 FG = 2,5 kgfor discs withhousing T41.14,D41.14, T50.14,D50.14, T60.14,D60.14K 0.22 FG = 3 kgfor discs Ø 41,50, 60 mmflat connectorC1C2201920199A1A2ExplanationsD14011HKGateflat connectorD26.3x0.8 Ø6.5165.5121136151B1GHKM8GHKB2insulation plate130
12115113640K 0.36 S G = 2,9 kg K 0.65 S G = 3,3 kg2004386120for discs withhousing T41.14,D41.14, T50.14,D50.14, T60.14,D60.14266.5200for discs withhousing T41.14,D41.14, T50.14,D50.14, T60.14,D60.14flat connector6,3x0,8IGBTflat connector6.3x0.8219A1A2462105135GateHK196.5185.5B1B2M8296261243195C1D1C22019201119HKGateflat connectorD2 6.3x0.86.5219185.5121136151A1B1GHKGHKA2B2ExplanationsStacksSCR/Diode Modules78Presspacks125159166.56.6GGGGK 0.92Sfor discs with housing T57.26, D57.26,T75.26, D75.26M8D59ÿ11215Bflat connector6.3 x 0.830151808367 301782322536.6C12.527.5insulation plateA131
KE 01G = 18,8 kgExplanationsPresspacksStacksSCR/Diode ModulesIGBTKE 02for discs with maximum Ø 150 mmG = 18,5 kgfor discs with maximum Ø 120 mm132
ModSTACK MS1ExplanationsStacksPresspacksSize: 1SCR/Diode ModulesIGBT133
ModSTACK MS2ExplanationsStacksPresspacksSCR/Diode ModulesSize: 2IGBT134
ModSTACK MS3ExplanationsStacksPresspacksSize: 3SCR/Diode ModulesIGBT135
ModSTACK MS4ExplanationsStacksPresspacksSCR/Diode ModulesSize: 4IGBT136
PrimeSTACK PS_C2GExplanationsStacksPresspacksSCR/Diode ModulesIGBT137
PrimeSTACK PS_C2WExplanationsStacksPresspacksSCR/Diode ModulesIGBT138
PrimeSTACK PS_C3GExplanationsStacksPresspacksSCR/Diode ModulesIGBT139
PrimeSTACK PS_C3WExplanationsStacksPresspacksSCR/Diode ModulesIGBT140
PrimeSTACK PS_C4GExplanationsStacksPresspacksSCR/Diode ModulesIGBT141
PrimeSTACK PS_C4WExplanationsStacksPresspacksSCR/Diode ModulesIGBT142
Gate Leads for PowerBLOCK Thyristor ModulesGate leads must be ordered separatelyBaseplate connection to connection to color length [mm] Part.no Outlinemm30 mm 5 / 4 G1/HK1 G yellow / HK red 250 28118 LZ 56 / 7 G2/HK2 G yellow / HK red 250 28119 LZ 634, 50, 60 mm 5 / 4 G1/K1 G yellow / HK red 250 28128 LZ 56 / 7 G2/K2 G yellow / HK red 250 28129 LZ 650 mm Single 5 / 4 G1/K1 G yellow / HK red 250 28128 LZ 570 mm 5 / 4 G2/K2 G yellow / HK red 250 28129 LZ634, 50, 60 mm 5 / 4 G1/K1 G yellow / HK red 470 28133 LZ 56 / 7 G2/K2 G yellow / HK red 470 28134 LZ 650 mm Single 5 / 4 G1/K1 G yellow / HK red 470 28133 LZ 570 mm 5 / 4 G2/K2 G yellow / HK red 470 28134 LZ6lead material: silicon cord type SiFF 0,5mm 2IGBTSCR/Diode ModuleslengthlengthPresspacksExplanationsStacks143
Standard Gate Leads for Disc Type DevicesLeads and gate leads must be ordered separatelyStacksPresspacksSCR/Diode ModulesIGBTDisc outline / page Material Mat. no. Connection Color LengthmmT41.14 epoxy 2385 HK red 225 1)T50.14 2386 G yellow 225T60.14 epoxy 2387 HK red 225 1)T75.14 2386 G yellow 225T57.26T75.26T100.26T100.35T110.26T110.35T60.14 epoxy 12511 HK red 600 2)T75.14 12510 G yellow 600T57.26T75.26T100.26T100.35T110.26T110.35T57.26K ceramic 2387 HK red 225 1)T58.26K 2386 G yellow 225T75.26KT76.26KT76.35KT57.26K ceramic 12511 HK red 600 2)T58.26K 12510 G yellow 600T75.26KT76.26KT76.35KT120.26K ceramic 14232 HK red 1000 2)T120.35K 14231 G white 1000T150.26KT150.35KT172.35KT100.26K ceramic 30258 HK red 1000 2)T111.26K 1100081 G white 10001) with plug 6,3 x 1 mm at the free ends – lead material: silicon cord type SiFF 0,5 mm22) without plug at the free ends – lead material: teflon cord type FEP 0,5 mm2Explanations144
Clamping Force (kN) and Disc Diameter (mm)Phase control thyristorsTyp kN mmT 178 N 2,5 - 5 41T 201 N 7 - 12 58T 218 N 2,5 - 5 41T 281 N 7-12 58T 298 N 3 - 6 41T 308 N 5 - 10 50T 348 N 2,5 - 5 41T 358 N 4 - 8 41T 378 N 4 - 8 41T 379 N 10,5 - 21 57T 380 N 7,5 - 17,5 56T 388 N 5 - 10 50T 398 N 3 - 6 41T 399 N 7,5 - 17,5 57T 458 N 7,5 - 17,5 60T 459 N 7,5 - 17,5 57T 501 N 15 - 24 75T 508 N 5 - 10 50T 509 N 5 - 10 57T 551 N 15 - 24 75T 553 N 15 - 24 75T 568 N 4 - 8 41T 571 N 15-24 75T 588 N 6 - 12 50T 589 N 6 - 12 57T 618 N 6 - 12 50T 619 N 6 - 12 57T 639 N 9 - 18 57T 648 N 9 - 18 50T 649 N 9 - 18 57T 658 N 10,5 - 21 60T 659 N 10,5 - 21 57T 699 N 10,5 - 21 57T 708 N 10,5 - 21 60T 709 N 12 - 29 75T 718 N 9 - 18 60T 719 N 9 - 18 57T 729 N 18 - 43 75T 730 N 18 - 43 75T 731 N 15 - 24 75T 739 N 15 - 24 75T 828 N 5,5 - 8 50T 829 N 12 - 29 75T 860 N 20 - 45 74T 869 N 20 - 45 75T 878 N 10,5 - 21 60T 879 N 10,5 -21 57T 901 N 15 - 24 75T 909 N 15 - 24 75T 929 N 20 - 45 75T 1039 N 16 - 32 75T 1049 N 12 - 24 75T 1078 N 8 - 16 50T 1081 N 36 - 52 120T 1189 N 16 - 32 75T 1201 N 36 - 52 120Phase control thyristorsTyp kN mmT 1218 N 20 - 45 75T 1219 N 20 - 45 75T 1258 N 12 - 24 60T 1329 N 20 - 45 75T 1401 N 36 - 52 120T 1451 N 36 - 52 120T 1500 N 24 - 56 74T 1503 N/T 1503 NH 63 - 91 150T 1509 N 24 - 56 75T 1551 N 36 - 52 120T 1589 N 30 - 65 100T 1601 N 36 - 52 120T 1851 N/T 1651 N 45 - 65 120T 1866 N 30 - 65 100T 1869 N 30 - 65 100T 1901 N/T 2251 N 63 - 91 150T 1929 N 42 - 95 110T 1971 N 36 - 52 120T 1986 N 30 - 65 100T 1989 N 30 - 65 100T 2001 N 36 - 52 120T 2009 N 36 - 52 110T 2156 N 42 - 95 110T 2159 N 42 - 95 110T 2160 N 42 - 95 120T 2161 N 45 - 65 120T 2351 N 45 - 65 120T 2401 N 63 - 91 150T 2476 N 42 - 95 110T 2479 N 42 - 95 110T 2480 N 42 - 95 120T 2509 N 24 - 56 75T 2563 N/T 2563 NH 90 - 130 170T 2709 N 42 - 95 110T 2710 N 42 - 95 120T 2851 N/T3441 N 63 - 91 150T 2871 N 90 - 130 120T 3101 N 63 - 91 150T 3159 N 42 - 95 110T 3401 N/T 3801 N 63 - 91 150T 3441 N 63 - 91 150T 3709 N 30 - 65 100T 3801 N 63 - 91 150T 4021 N 90 - 130 170T 4003 N/T 4003 NH 90 - 130 170T 4301 N 63 - 91 150T 4771 N 63 - 91 150ExplanationsStacksPresspacksSCR/Diode ModulesIGBT145
Clamping Force (kN) and Disc Diameter (mm)ExplanationsStacksPresspacksSCR/Diode ModulesIGBTFast thyristorsTyp kN mmFast ThyristorsT 178 F 1,5 - 2,5 41T 408 F 5 - 10 50T 930 S 16 - 32 74T 1052 S 16 - 32 74T 1078 F 8 - 16 50Fast Asymmetric ThyristorsA 158 S 2,5 - 4,5 41A 358 S 4,5 - 9 50A 438 S 4,5 - 9 50Rectifier diodesTyp kN mmD 269 N 3,2 - 7,6 57D 428 N 3,2 - 7,6 41D 448 N 2,6 - 4,6 41D 471 N 10 - 16 58D 660 N 6,1 - 14,7 41D 711 N 10 - 16 58D 748 N 6,1 - 14,7 50D 749 N 10 - 24 57D 758 N 3,2 - 7,6 41D 798 N 6 - 14,7 50D 849 N 10 - 24 57D 850 N 10 - 24 56D 1029 N 10 - 24 57D 1030 N 10 - 24 56D 1049 N 10 - 24 57D 1069 N 14 - 34 75D 1481 N 15 - 36 75D 1800 N 24 - 60 74D 1809 N 24 - 60 75D 2200 N 24 - 60 74D 2209 N 24 - 60 75D 2228 N 12 - 24 60D 2601 N/D 2601 NH 36 - 52 120D 2650 N 24 - 60 74D 2659 N 24 - 60 75D 2898 N 12 - 24 60D 3001 N/D 3041 N 36 - 52 120D 3501 N 36 - 52 120D 4201 N 36 - 52 120D 4457 N 30 - 45 60D 4709 N 42 - 95 110D 5807 N 40 - 60 72D 5809 N 30 - 60 75D 6001 N 55 - 91 150D 6247 N 30 - 45 60D 8019 N 40 - 80 100D 8407 N 40 - 60 7325 DN 06 4 - 8 2538 DN 06 20 - 30 3846 DN 06 30 - 45 4656 DN 06 40 - 60 5665 DN 06 55 - 80 65Fast rectifier diodesTyp kN mmD 138 S 1,7 - 3,4 41D 178 S 1,7 - 3,4 41D 188 S 1,7 - 3,4 41D 228 S 3,2 - 7,6 41D 238 S 3,2 - 7,6 41D 291 S 9 - 13 58D 348 S 3,2 - 7,6 41D 358 S 3,2 - 7,6 41D 368 S 3,2 - 7,6 41D 371 S 10 - 16 58D 438 S 4,8 - 11,4 41D 440 S 4,8 - 11,4 56D 509 S 6 - 14,5 57D 648 S 6 - 14,5 50D 649 S 6 - 14,5 57D 658 S 6 - 14,5 50D 659 S 6 - 14,5 57D 675 S 10 - 24 56D 689 S 10 - 24 57D 690 S 10 - 24 57D 721 S 15 - 36 75D 801 S 15 - 36 75D 841 S 15 - 36 75D 901 S 27 - 45 100D 911 SH 27 - 45 100D 921 S 27 - 45 100D 931 SH 27 - 45 100D 1031 SH 27 - 45 100D 1131 SH 36 - 52 120D 1169 S 18 - 50 75D 1170 S 8 - 50 74D 1251 S 15 - 36 75D 1121 SH 36 - 52 120D 1331 SH 36 - 52 120D 1381 S 27 - 45 100D 1408 S 18 - 50 75D 1461 S 27 - 45 100D 1951 SH 55 - 91 150D1961SH 36-52 120146
TypenbezeichnungenScheibenbauelementeT 930 S 18 T M CTThyristorDDiodeAasymmetrischer Thyristor930 Dauergrenzstrom (A)0 Standardkeramik-Scheibe1 Hochleistungskeramik-Scheibe4 Epoxy-Scheibe 19mm hoch6 Epoxy-Scheibe 35mm hoch7 Epoxy-Scheibe 8mm hoch8 Epoxy-Scheibe 14mm hoch9 Epoxy-Scheibe 26mm hoch3 lichtgezündeter Thyristor,Keramik-Scheibennetz-BauelementKnetz-Diode mit Kathode am Gehäuse(nur Flachboden oder Gewindebolzen)Fschneller Thyristor mit ZentralgateSschneller Thyristor mit verzweigtem Gate,schnelle Diode mit Aode am GehäuseUschnelle Diode mit Kathode am Gehäuse(nur Flachboden oder Gewindebolzen)AAvalanche Diode mit Anode am Gehäuse(nur Flachboden oder Gewindebolzen)BAvalanche Diode mit Kathode am Gehäuse(nur Flachboden oder Gewindebolzen)nHDiode mit softrecovery Verhalten fürhohe Strompulse, Thyristor zum Einschaltenvon hohen StromanstiegenSHDiode mit softrecovery Verhalten18 periodische Vorwärts- und Rückwärts-Spitzensperrspannungin 102 VBmit metrischem Gewinde u. SeilCmit metrischem Gewinde u. LötöseEFlachbodenTScheibeFreiwerdezeitA 8µsB 10µsC 12µsD 15µsS 18µsE 20µsF 25µsG 30µsK 40µsT 930 S 18 T M CTT 162 N 16 K O F -KTTDDND, DZ, TZTD, DTADM 50µsP 55µsn 60µsT 80µsU 120µs0 keine garantierte Freiwerdezeit1 auf Anfrage2 auf Anfragekritische Spannungssteilheit:BCFGHB01...nS01...nPowerBLOCK Module50V/µs500V/µs1000V/µs1500/µs2000V/µsKonstruktionsvarianteelektrische Selektionmit 2 Thyristorenmit 2 Diodenmit 1 Thyristor oder 1 Diodemit 1 Thyristor und 1 Diodemit 1 asymmetrischen Thyristorund 1 Diode162 Dauergrenzstrom (A)nnetz-ElementFschneller Thyristor mitZentralgateSschneller Thyristor mit verzweigtemGate, schnelle Diode16 periodische Vorwärts- und Rückwärts-Spitzensperrspannungin 102 VKmech. Ausführung: ModulOFreiwerdezeit(siehe Scheibenbauelemente)F kritische Spannungssteilheit(siehe Scheibenbauelemente)-K Ausführung mit gem. Kathode-A Ausführung mit gem. AnodeKonstruktionsvarianteS01...n elektrische SonderspezifikationExplanationsStacksPresspacksSCR/Diode ModulesIGBT147
Type designationPresspacksExplanationsStacksPresspacksSCR/Diode ModulesIGBTT 930 S 18 T M CTthyristorDdiodeAasymmetric thyristor930 average on state current (A)0 standard ceramic disc1 high power ceramic disc4 epoxy disc 19 mm high6 epoxy disc 35 mm high7 epoxy disc 8 mm high8 epoxy disc 14 mm high9 epoxy disc 26 mm high3 light triggered thyristor, ceramic discnphase control deviceKphase control diode with cathodeon case (only flatbase or stud)Ffast thyristor with central gateSfast thyristor with distributedgate, fast diodeUfast diode with cathode on case(only flatbase or metric)Aavalanche diodeBavalanche diode with cathodeon case (only flatbase or metric)nHDiode: soft recovery for high currentpulsesThyristor: high turn-on di/dt capabilitySHsoftrecovery diode18 repetitive peak off-state andreverse voltage in 102 VBmetric thread with cableCmetric thread with solder pinEflat baseTdiscturn-off time:A 8 µsB 10 µsC 12 µsD 15 µsS 18 µsE 20 µsF 25 µsG 30 µsK 40 µsM 50 µsP 55 µsT 930 S 18TT 162 N 16 K O F-KTTDDND, DZ, TZTD, DTADT M Cn 60 µsT 80 µsU 120 µsOno guaranteed turn off time1 on request2 on requestBCFGHB01...nS01...nPowerBLOCK Modulescritical rate of off-state voltage50 V/µs500 V/µs1000 V/µs1500 V/µs2000 V/µscontruction variationelectrical selectionwith 2 thyristorswith 2 diodeswith 1 thyristor or 1 diodewith 1 thyristor and 1 diodewith 1 asymmetric thyristorand 1 diode162 average on state current (A)nphase control deviceFfast thyristor with central gateSfast thyristor with distributed gate,fast diode16 repetitive peak off-state andreverse voltage in 102 VKmechanical construction: moduleOturn off time (see disc devices)F critical rate of rise of off-statevoltage (see disc devices)-K design with common cathode-A design with common anodeB01...n construction variationS01...n electrical selection148
TypenbezeichnungenIGBT ModulesFF 400 R 33 K F x Beispiel für ein HochleistungsmodulFZEinzelschalter mit IGBTund FreilaufdiodeFFHalbbrücke (zwei IGBT’sund Freilaufdioden)FPIntegriertes Modul mit IGBT,nTC, B6, ChopperFMMatrix ModuleFD/DFChoppermodulFB Integriertes Modul in B2-Konfiguration mit IGBT & NTCDDDoppeldiodenmodulF4FourPACKFSSixPACK400 max. Kollektor-Dauergleichsstrom (A)Rrückwärts leitendSschnelle Diode33 Kollektor-Emitter-Sperrspannung in 102 VK/H/I/M/N mechanische Ausführung:w1/w2/V /X/Y ModulFschnell schaltender TypLTyp mit niedriger vCEsatSschneller short Tail IGBT ChipEtrench IGBT mit kleiner Sättigungsspannungund schnell schaltendTschneller trench IGBTPsoft schaltender trench IGBT1 … n interne ReferenznummerC EmCon DiodeD größerer Dioden Strom-K Design mit common KathodeG Modul im größeren GehäuseI mit integrierter KühlungB1 … n konstruktive VariationenS1 … n elektrische SelektionTD B6 H K 135 N 16DDTTTDGALChoppermodul (Diode kollektorseitig)GARChoppermodul (Diode emitterseitig)AEinzeldiode120 Kollektor-Emitter-Sperrspannungin 101 VDLTyp mit niedriger vCEsatDN2schnell schaltender TypDLClow lost Typ mit EmCon DiodeSmit HilfskollektorGDesign VariationB6W3CHUKExxx SondertypBridge Rectifiers and AC-SwitchesL OFDioden-ModulThyristor-ModulThyristor/Dioden-ModulSechspuls-BrückeDreiphasen-Wechselwegvollgesteuerthalbgesteuertungesteuertgemeins. Kathode der Thyristoren135 Ausgangsstrom (A)(W3C: Effektivstrom)nnetzthyristor/Diode16 periodische Spitzensperrspannungin 100 VL IsoPACKR EconoBRIDGE ohne integr. BremschopperIGBTRR EconoBRIDGE mit integr.Bremschopper IGBTO keine garantierte FreiwerdezeitF kritische SpannungssteilheitStacksPresspacksSCR/Diode ModulesIGBTBSM 100 GB 120 DL x Beispiel für ein StandardmodulBSMSchalterBYMDiodenmodul100 max. Kollektor-Dauergleichstrom (A)GAEinzelschalter mit IGBTund FreilaufdiodeBSM 100 GB 120 DL xGBHalbbrücke (zwei IGBTsund Freilaufdioden)GDVollbrückeGT3 Einzelschalter mit IGBTund FreilaufdiodeGPIntegriertes Modul B6/Break/WRExplanations149
Type designationIGBT ModulesExplanationsStacksPresspacksSCR/Diode ModulesIGBTFF 400 R 33 K F x example for a High-Power-ModuleFZsingle switch with oneIGBT and FWDFFhalf bridge (two IGBTs an FWDs)FPPower Integrated ModuleFMMatrix ModuleFD/DFchopper moduleFBIntegrated modules in B2configuration with IGBT & NTCDDdual diode moduleF4FourPACKFSSixPACK400 max. DC-collector current (A)Rreverse conductingSfast Diode33 collector-emitter-voltage in 102 VK/H/I/M/N mechanical construction:w1/w2/V/X/Y moduleFfast switching typeLtype with low vCEsatSfast short tail IGBT ChipElow sat and fast trench IGBTTfast trench IGBTPsoft switching trench IGBT1 … n internal reference numbersC EmCon DiodeD higher Diode current-K design with common cathodeG module in big housingI integrated coolingB1 … n Construction variationS1 … n Electrical selectionBSM 100 GB 120 DL x example for a standard moduleBSMswitch with IGBT and FWDBYMdiode module100 max. DC-collector current (A)GAsingle switch with oneIGBT and FWDGBhalf bridge(two IGBTs and FWDs)GD3 phase full bridge (6-pack)GT3 single switches an FWDs(Tripack)BSM 100 GB 120 DL xGPPower Intergrated ModuleB6/Break/InverterGALchopper module (diode oncollector side)GARchopper module (diode onemitter side)Asingle diode120 collector-emitter-voltage in 10 1 VDLTyp with low vCEsatDN2fast switching typeDLClow loss type with EmCon DiodeSwith collector senseGDesign VariationExxx special typeBridge Rectifiers and AC-SwitchesTD B6 H K 135 N 16 L OFDDdiode moduleTTthyristor moduleTDthyristor/diodeB6three phase bridgeW3three phase AC-switchCfully controlledHhalf controlledUuncontrolledKcommon cathode of thyristors105 output current (A)(W3C: RMS-current)nphase control thyristor/diode16 repetitive peak off-statevoltage in 100 VL IsoPACKR EconoBRIDGE without integr.brake chopper IGBTRR EconoBRIDGE with integr.brake chopper IGBTO no guaranteed turn-off timeF critical rate of rise ofoff-state voltage150
Letter Symbols/KurzzeichenB DC current gain Kollektor-Basis-Gleichstromverhltn.FBSOA forward biased safe operating area Sicherer Vorwärts-Arbeitsbereichf frequency Frequenzf o repetition frequency WiederholfrequenzF clamping force AnpresskraftG weight GewichtI C maximum permissible DC collector current höchstzulässiger DauergleichstromI CAVM maximum permiss. average collector current Kollektor-DauergrenzstromI CES collector-emitter cut-off current Kollektor-Emitter-ReststromI GES gate-leakage current Gate-Emitter ReststromI EGS gate-leakage current Emitter-Gate Reststromi CBO collector-base cut-off current Kollektor-Basis-ReststromI CRM permissible repetitive peak collector current höchstzulässiger periodischer Kollektor-Spitzenstromi EBO emitter-base cut-off current Emitter-Basis-Reststromi FB forward base current Vorwärts-BasisstromI FB maximum permissible peak forward current höchstzul. Vorwärts-Basis-Spitzenstromi RB reverse base current Rückwärts-BasisstromI RB maximum perm. peak reverse base current höchstzulässiger Rückwärts-Basis-Spitzenstromi D forward off-state current Vorwärts-Sperrstromi G gate current SteuerstromI GD gate non trigger current nicht zündender Steuerstromi GM peak gate current SpitzensteuerstromI GT gate trigger current ZündstromI H holding current HaltestromI L latching current Einraststromi R reverse current Rückwärts-SperrstromI RMS RMS current Strom-EffektivwertI RM peak reverse recovery current Rückstromspitzei T /i F on-state current DurchlassstromI TAV /I FAV on-state current (average value) Durchlassstrom (Mittelwert)I TAVM /I FAVM maximum average on-state current DauergrenzstromI TINT /I FINT on-state current at intermittent duty Durchlassstrom bei AussetzbetriebI TM /I FM on-state current (peak value) Durchlassstrom (Spitzenwert)I T(OV) /I F(OV) on-state current at shorttime duty Überstrom bei KurzzeitbetriebI T(OV)M /I F(OV)M maximum overload on-state current GrenzstromI T(RC)M repetitive turn-on current (from snubber) periodischerEinschaltstrom (aus RC)I TRMSM /I FRMSM maximum RMS on-state current Durchlassstrom-GrenzeffektivwertI TSM /I FSM surge non repetitive on-state current Stoßstrom-GrenzwertI F (max) DC forward current DauergleichstromI FRM repetitve peak forward current Periodischer Spitzenstrom∫i 2 dt maximum rated value Grenzlastintegraldi G /dt rate of rise of gate current Steilheit des Steuerstromesdi T /dt/di F /dt rate of rise of on-state current Steilheit des Durchlassstromes(di/dt) cr critical rate of rise of on-state current kritische StromsteilheitL inductance InduktivitätM tightening torque AnzugsdrehmomentP ON turn-on dissipation EinschaltverlustleistungP OFF turn-off dissipation AusschaltverlustleistungP power dissipation VerlustleistungP D forward off-state dissipation Vorwärts-SperrverlustleistungP G gate dissipation SteuerverlustleistungP R reverse power dissipation Rückwärts-SperrverlustleistungP RQ turn-off dissipation AusschaltverlustleistungP TT + P RQ switching dissipation SchaltverlustleistungP T /P F on-state power dissipation DurchlassverlustleistungP TAV /P FAV on-state power dissipation (average value) Durchlassverlustleistung (arithmetischer Mittelwert)P TT turn-on dissipation EinschaltverlustleistungP tot total power dissipation GesamtverlustleistungQ r recovered charge SperrverzugsladungQ s lag charge NachlaufladungR resistance Widerstandr T slope resistance ErsatzwiderstandExplanationsStacksPresspacksSCR/Diode ModulesIGBT151
Letter Symbols/KurzzeichenExplanationsStacksPresspacksSCR/Diode ModulesIGBTR thCA thermal resistance, case to coolant Wärmewiderstand Gehäuse-KühlmittelR thCK thermal resistance, case to heatsink Übergangs-WärmewiderstandR thJA thermal resistance, junction to coolant GesamtwärmewiderstandR thJC thermal resistance, junction to case innerer WärmewiderstandRBSOA reverse biased safe operating area Sicherer Rückwärts-Arbeitsbereicht time ZeitT period PeriodendauerT A coolant temperature KühlmitteltemperaturT C case temperature GehäusetemperaturT cop operating temperature Betriebstemperaturt g trigger pulse duration Steuerimpulsdauert gd gate controlled delay time ZündverzugT h heatsink temperature Kühlkörpertemperaturt p current pulse duration (sinusoidal) Strompulsdauer (Sinusform)t q circuit commutated turn-off time Freiwerdezeitt rr reverse recovery time SperrverzugszeitT vj junction temperature SperrschichttemperaturT vj max maximum permissible junction temperature höchstzul. Sperrschichttemperaturt w current pulse duration (trapezoidal) Stromflusszeit (Trapezform)t f fall time Fallzeitt fb min minimum duration of forward base current Mindestdauer des Vorwärtsbasisstromst off turn-off time Abschaltzeitt on turn-on time Einschaltzeitt s storage time SpeicherzeitT vj op operating temperature BetriebstemperaturT st storage temperature Lagertemperaturv D forward off-state voltage Vorwärts-Sperrspannungv DM forward off-state voltage (peak value) Vorwärts-Sperrspanng (Spitzenwert)V DRM repetitive peak forward off-state voltage periodische VorwärtsspitzenspannungV DSM non-repetitive peak forward off-state voltage Vorwärts-Stoßspitzenspannungv G gate voltage SteuerspannungV GD gate non trigger voltage nicht zündende SteuerspannungV GE (th) gate threshold voltage Gate-SchwellenspannungV GT gate trigger voltage ZündspannungV ISOL insulation test voltage Isolat.-Prüfspannungv L no-load voltage of trigger pulse generator Leerlaufspannung des Steuergeneratorsv R reverse voltage Rückwärts-SperrspannungV R direct reverse voltage Rückwärts-GleichsperrspannungV RG reverse gate voltage Rückwärts-SteuerspannungV RGM peak reverse gatevoltage Rückwärts-Spitzensteuerspannungv RM reverse voltage (peak value) Rückwärts-Sperrspannung (Spitzenw.)V RMS V DC RMS or DC voltage value Bemessungsspannung Effektivwert/GleichspannungV RRM repetitive reverse voltage periodische Rückwärts-SpitzensperrspannungV RRM(C) repetitive peak reverse voltage after commutation periodische Spitzensperrspannung nach der KommutierungV RSM non-repetitive peak reverse voltage Rückwärts-Stoßspitzenspannungv T /v F on-state voltage DurchlassspannungV (TO) threshold voltage SchleusenspannungV M repetitive peak voltage periodische SpitzensperrspannungV CE sat collector-emitter saturation emitter voltage Kollektor-Emitter-SättigungsspannungV CES , V CE maximum permissible collector-voltage höchstzulässige Kollektor-Emitter-Sperrspannungdv D /dt rate of rise of forward off-state voltage Steilheit der Vorwärts-Spannungdv R /dt rate of rise of reverse voltage Steilheit der Rückwärts-Spannung(dv/dt) cr critical rate of rise of off-state voltage kritische SpannungssteilheitV L air quantity LuftmengeV W water quantity WassermengeW energy VerlustenergieW tot total energy GesamtverlustenergieZ thCA transient thermal impedance, case to coolant transienter äußerer WärmewiderstandZ thJA transient thermal impedance, junction to coolant transienter GesamtwärmewiderstandZ thJC transient thermal impedance, junction to case transienter innerer WärmewiderstandQ current conduct. angle Stromflusswinkel152
Mounting Hardware for EasyPIM, EasyPACK,EasyBRIDGE and EasyDUAL ModulesSuitable for Type Outline Part-No.IGBTEasy750 housing ScrewClamp Easy750 SC750 24126Easy750housing IsolationCap Easy750 IC750 27332SC750SC1SC2Easy1 housing ScrewClamp Easy1 SC1 23088Easy2 housing ScrewClamp Easy2 SC2 23089SCR/Diode ModulesSC750IC750ExplanationsStacksPresspacksSC1SC2153
Package UnitsBipolar ProductsStacksPresspacksSCR/Diode ModulesIGBTStandard Housing Diameter PackingThyristors and DiodesUnitsStandard Epoxy Discs Diode Housing 100 mm 3Diode Housing 110 mm 2Diode Housing 41 mm 16Diode Housing 50 mm 10Diode Housing 57 mm 3Diode Housing 60 mm 6Diode Housing 72 mm 6Diode Housing 75 mm 2Thyristor Housing 50 mm 10Thyristor Housing 57 mm 3Thyristor Housing 75 mm 2Thyristor Housing100 mm 3Thyristor Housing110 mm 2Standard Ceramic Discs Diode Housing 41 mm 16Diode Housing 56 mm 3Diode Housing 58 mm 3Diode Housing 74 mm 2Thyristor Housing 120 mm 2Thyristor Housing 56 mm 3Thyristor Housing 74 mm 2Flatbase/Metric Types Flatbase 36 mm 10Flatbase 54 mm 5Metric Wrench Size 27 mm 10Metric Wrench Size 32 mm 10Metric Wrench Size 42 mm 5Housing DiameterPackingUnitsPowerBLOCK PB20, 20 mm 10PB25, 25 mm 8PB30, 30 mm 4PB34, 34 mm 5PB50, 50 mm 6PB50.1, 50mm 2PB60, 60 mm 4PB70, 70 mm 2High Power Housing Diameter PackingThyristors and DiodesUnitsCeramic ETT Discs Thyristor Housing 57 mm 3Thyristor Housing 75 mm 2Thyristor Housing 120 mm 2Thyristor Housing 150 mm 1Thyristor Housing 170 mm 1Ceramic LTT Discs Thyristor Housing 75 mm 3Thyristor Housing 150 mm 1Thyristor Housing 170 mm 1Ceramic Diodes Diode Housing 58 mm 3Diode Housing 74 mm 2Diode Housing 100 mm 3Diode Housing 120 mm 2Diode Housing 150 mm 1Rectifier Modules Rectifier Modules PackingUnitsIsoPACK Bridge 42 mm 454 mm 3EconoBRIDGE Rectifier 45 mm 10EasyBRIDGE 750 25,4mm x 35,6 mm 40EasyBRIDGE 1 33 mm x 45,6 mm 20EasyBRIDGE 2 45,6 mm x 55,9 mm 20Explanations154
Package UnitsIGBT Low Power ModulesEasyPIM Modules Housing Size (overall) PackingUnitsEasyPIM 750 25,4 mm x 35,6 mm 40EasyPIM 1 33,0 mm x 45,6 mm 20EasyPIM 1B 33,8 mm x 48,0 mm 24EasyPIM 2 45,6 mm x 55,9 mm 20EasyPIM 2B 48,0 mm x 56,7mm 15EasyDUAL Modules Housing Size (overall) PackingUnitsEasyDUAL 2 45,6 mm x 55,9 mm 20Package UnitsIGBT Medium Power ModulesEconoPIM Modules Housing Size (overall) PackingUnitsEconoPIM 1 41,0 mm x 81,0 mm 16EconoPIM 2 45,0 mm x 107,0 mm 10EconoPIM 3 62,0 mm x 122,0 mm 1034 mm Modules Housing Size (overall) Packing62 mm Modules UnitsStandard 34mm 34,0 mm x 94,0 mm 10Standard 62mm 62,0 mm x 106,4 mm 10EasyPIM Modules Housing Size (overall) PackingUnitsEasyPIM 750 25,4 mm x 35,6 mm 40EasyPIM 1 33,0 mm x 45,6 mm 20EasyPIM 1B 33,8 mm x 48,0 mm 24EasyPIM 2 45,6 mm x 55,9 mm 20EasyPIM 2B 48,0 mm x 56,7mm 15EconoPACK Modules Housing Size (overall) PackingUnitsEconoPACK 1 41,0 mm x 81,0 mm 16EconoPACK 2 45,0 mm x 107,0 mm 10EconoPACK 3 62,0 mm x 122,0 mm 10EconoPACK + Housing Size (overall) PackingEconoDUALUnitsEconoPACK + 162,0 mm x 150,0 mm 4EconoDUAL 2 45,0 mm x 122,0 mm 14EconoDUAL 3 62,0 mm x 152,0 mm 10IGBTSCR/Diode ModulesPresspacksPackage UnitsIGBT High Power ModulesIHM Modules Housing Size (overall) PackingUnitsIHM 73 73,0 mm x 140,0 mm 4IHM 130 130,0 mm x 140,0 mm 2IHM B 130 130,0 mm x 140,0 mm 2IHM190 190,0 mm x 140,0 mm 1IHM B 190 190,0 mm x 140,0 mm 1PrimePACK Modules Housing Size (overall) PackingUnitsPP2 89,0 mm x 172,0 mm 3PP3 89,0 mm x 250,0 mm 2IHV Modules Housing Size (overall) PackingUnitsIHV 73 73,0 mm x 140,0 mm 4IHV 130 130,0 mm x 140,0 mm 2IHV 190 190,0 mm x 140,0 mm 1IHV B 130 130,0 mm x 140,0 mm 2IHV B 190 190,0 mm x 140,0 mm 1StacksExplanations155
ExplanationsStacksPresspacksSCR/Diode ModulesIGBTBusiness Excellence due to Quality ManagementIn quality and reliability of our innovative products and services forpower electronics we are a worldwide leading company.We have developed and introduced a quality management whichcontinuously supervises the stability and the performance of ourproduction and business progresses. The qualification of our innovativeproducts and services with the most progressive quality toolscontributes effectively and efficiently to a positive business development.Our quality management is permanently brought in line with the requestsand expectations of our customers, partners and employees.The base are the standards DIN EN ISO 9001:2000 and the ISO/TS16949, which includes the requirements of the automobile industry.In addition to this standards we use the EFQM-Model for BusinessExcellence and the SIX SIGMA methodology to force the continualimprovement of our company.Our competent and qualified employees are motivated to fulfill therequests and wishes of our customers to their highest satisfactionat all times.Environmental and safety managementBy the use of our products, the consumption of electrical energy canbe reduced. Following from this, we also during our parts‘ manufacturingput focus on environmental protection and economical use ofnatural resources. Our means aiming at environmentally friendly organisationcover all production flows and the whole product range.Our efforts regarding environmental protection are accompanied byour activities concerning accident control and health protection ofour employees. By anticipatory protection- and training courses wemeet the high responsibilty for our employees.We consider the consistent implementation of environmetal protection,health protection, and operational safety as a main factor forour company‘s continued success and monitor progress in theseareas regularly, evaluate the results, und set new focus points andtargets.Our environmental management is certified as per DIN EN ISO 1400,our safety management as per OSHAS 18001.QualitätsmanagementQualität und Zuverlässigkeit unserer innovativen Produkte undLeistungen für die Leistungselektronik sind weltweit führend.Wir haben ein Qualitätsmanagement entwickelt und eingeführt, dasdie Stabilität und die Leistung unserer Fertigungs- und Geschäftsprozessekontinuierlich überwacht, unsere innovativen Produkte undLeistungen mit den fortschrittlichsten Qualitätswerkzeugen qualifiziertund in seiner effektiven und effizienten Umsetzung seinen Beitragzu einer positiven Geschäftsentwicklung leistet.Unser Qualitätsmanagement wird ständig den Anforderungen und Erwartungenunserer Kunden, Partner und Mitarbeiter angepasst undkontinuierlich verbessert. Grundlage dafür bilden die Normen DINEN ISO 9001:2000 sowie die ISO/TS 16949, welche die Forderungender Automobilindustrie beinhalten. Weiterhin nutzen wir das EFQM-Modell fürBusiness Excellence sowie die SIX SIGMA Systematik, um die ständigeVerbesserung unseres Unternehmens zu unterstützen.Unsere kompetenten Mitarbeiter sind qualifiziert und motiviert dieAnforderungen und Wünsche unserer Kunden immer zur höchstenZufriedenheit aller zu erfüllen.Umwelt- und ArbeitssicherheitsmanagementDer Einsatz unserer Produkte ermöglicht die Einsparung von elektrischerEnergie. Konsequenterweise fühlen wir uns auch bei derHerstellung unserer Produkte zur Schonung der Umwelt und der natürlichenRessourcen verpflichtet. Unsere Maßnahmen zur umweltgerechtenGestaltung umfassen die Produktionsabläufe sowie diegesamte Produktpalette.Hand in Hand mit den Anstrengungen im Umweltschutz gehen unsereMaßnahmen zur Unfallverhütung und zum Gesundheitsschutzunserer Mitarbeiter. Mit vorrausschauenden Schutz- und Schulungsprogrammenwerden wir unserer hohen Verantwortung gegenüberunseren Mitarbeitern gerecht.Wir sehen in der konsequenten Verwirklichung von Umweltschutz,Gesundheitsschutz und Arbeitssicherheit eine wesentliche Basis fürden kontinuierlichen Erfolg unseres Unternehmens und überprüfendeshalb regelmäßig unsere Fortschritte in diesen Bereichen, bewertendas Erreichte und setzen uns neue Schwerpunkte und Ziele.Unser Umweltmanagementsystem ist nach DIN EN ISO 14001 undunser Arbeitsschutzmanagementsystem nach OSHAS 18001 zertifiziert.156
Andre KöchlingGermanyInfineon Technologies AGIndustrial SalesMax-Planck-Str. 5D-59581 WarsteinPhone +49 2902 764-0Fax +49 2902 764-1167Germany Regional OfficeIndustrial SalesSiegfried LöwRegion north - CentralJörg MonekeBurgfeld 12D-37130 Gleichen-Klein LengdenPhone +49 5508 974445Fax +49 5508 974447Mobile +49 170 2267265joerg.moneke@infineon.comRegion WestAndre KöchlingEckenerstr. 8D-59075 HammTel. +49 2381 3059166E-Fax. +49 2902 764 72844Mobile +49 151 14264524andre.koechling@infineon.comRegion South-CentralGerhard MewißenAm Schützenrain 63D-64354 Reinheim-UeberauPhone +49 6162 4132Fax +49 6162 4133Mobile +49 171 2136243gerhard.mewissen@infineon.comJost WendtJörg MonekeGerhard MewißenRegion northJost WendtZum Dicken Busch 37D-22885 Barsbüttel-HamburgPhone +49 40 67044592Fax +49 40 67044593Mobile +49 175 2981581jost.wendt@infineon.comRegion SouthSiegfried LöwBrunnweiher 9D-71116 GärtringenPhone +49 7034 26665Fax +49 7034 26907Mobile +49 171 2136388siegfried.loew@infineon.comEBV Regional OfficesD-12277 Berlin-MariendorfKitzingstr. 15 - 19Phone +49 30 747005-0Fax +49 30 747005-55D-30938 BurgwedelIn der Meineworth 21Phone +49 5139 8087-0Fax +49 5139 8087-70D-41564 KaarstAn der Gümpgesbrücke 7Phone +49 2131 9677-0Fax +49 2131 9677-30D-71229 LeonbergNeue Ramtelstraße 4Phone +49 7152 3009-0Fax +49 7152 75958D-07806 Neustadt/OrlaZum Mühlenberg 9Phone +49 36481 244-0Fax +49 36481 244-99D-85586 PoingIm Technologiepark 2-8Phone +49 8121 774-0Fax +49 8121 774-422D-78050 VS-VillingenKaiserring 12Phone +49 7721 99857-0Phone +49 7721 99857-70D-65205 WiesbadenBorsigstraße 36Phone +49 6122 8088-0Fax +49 6122 8088-99AustriaInfineon Technologies Austria AGRoman BulantOperngasse 20 BA 1040 WienPhone +43 15877070-333Fax +43 15877070-500Mobile +43 676 5792003Roman.Bulant@Infineon.comEBV Regional OfficeA-1150 WienDiefenbachgasse 35/1Phone +43 18 91 52-0Fax +43 18 91 52-30BelgiumPlease contact Infineon TechnologiesFrance S.A.S Industrial SalesEBV Regional OfficeB-1831 DiegemKouterveldstraat 20Phone +32 27 160010Fax +32 27 208152Czech Republic/ Slovak RepublicVladimir ZizekUslavska 75CZ-326 00 PlzenPhone +420 377 473715Fax +420 377 471876Mobile +420 736 538133Vladimir.Zizek@volny.czEBV Regional OfficeCZ-170 00 Praha 7Argentinská 38/286Phone +420-234 091 011Fax +420-234 091 010DenmarkHans Buch ASAlex VittrupRoskildevej 8-10DK -2620 AlbertslundPhone +45 436850-21Fax +45 436850-56Mobil: +45 40703382av@hansbuch.dkEBV Regional OfficesDK-8230 ÅbyhøjVed Lunden 9Phone +45 8625 0466Fax +45 8625 0660DK-2860 SøborgRosenkæret 11 CPhone +45 3969 05-11Fax +45 3969 05-04EstlandEBV Regional OfficeEE-10621 TallinnLaki 12Phone +372 683 38-66Fax +372 683 38-70Cell. +372 513 2232FranceInfineon Technologies FranceS.A.SIndustrial SalesDaniel Schueffenecker2 ter, rue Marcel DORETBurolines IIF-31700 BLAGNACPhone +33 5 34 55 13 30Fax +33 5 34 55 13 34Sorelec SABP 899 avenue des PeupliersF-35512 Cesson-Sévigné CedexPhone +33 2 99 83 45 67Fax +33 2 99 83 39 69ExplanationsStacksPresspacksSCR/Diode ModulesIGBT157
ExplanationsStacksPresspacksSCR/Diode ModulesIGBTEBV Regional OfficesF-13854 Aix-en-Provence115, Rue Nicolas LedouxImmeuble Hemiris, Bâtiment A,Phone +33 4 42 39 65 40Fax +33 4 42 39 65 50F-92184 Antony Cedex (Paris)3, rue de la RenaissancePhone +33 1 40 96 30 00Fax +33 1 40 96 30 30F-35510 Cesson Sévigné (Rennes)29, av. des PeupliersPhone +33 2 99 83 00 50Fax +33 2 99 83 00 60F-67400 Illkirch GraffenstadenRue GruningerParc d‘innovation d ‚IllkirchPhone +33 3 90 40 59 69Fax +33 3 88 65 11 25F-31673 Labège Cedex (Toulouse)Immeuble Actys B2, voie 3,BP17316Phone +33 5 61 00 84 61Fax +33 5 61 00 84 74F-69693 Venissieux (Lyon)Parc Club du Moulin à Vent33, Av. du Dr. Georges LévyPhone +33 4 72 78 02 78Fax +33 4 78 00 80 81Great BritainInfineon Technologies U.K. Ltd.Dave StocksHunts Ground RoadGB-BS34 8HP BristolPhone +44 113 3930361Fax +44 113 3930361dave.stocks@infineon.comPower Semiconductors Ltd.Caxton CentrePorters WoodValley RoadGB-St. Albans Herts AL3 6XTPhone +44 17 27 81 11 10Fax +44 17 27 81 11 12info@powersemiconductors.co.ukEBV Regional OfficesSouth EastThames House17 Marlow RoadMaidenheadGB-Berkshire, SL6 7AAPhone +44 16 28770707Fax +44 16 28783811South West & Wales12 Interface Business ParkBincknoll LaneWootton BassettGB-Wiltshire, SN4 8SYPhone +44 17 938 49933Fax +44 17 938 59555NorthManchester InternationalOffice Centre, Suite 5BStyal RoadGB-Manchester, M22 5WBPhone +44 16 149934 34Fax +44 16 149934 74Scotland144 West George StreetGB-Glasgow, G2 2HGPhone +44 14 135220-50Fax +44 14 135220-59Greecesee Infineon Technologies AGIndustrial Sales GermanyEBV Regional OfficeGR-17778 TavrosAnaxagora Str. 1Phone +30 210 3414 300Fax +30 210 3414 304HungariaEBV Regional OfficeH-1037 BudapestMontevideo u. 2/BPhone +36 1 43672 29Fax +36 1 43672 20IrelandEBV Regional OfficeIRL-Dublin 12Ballymount Trading EstateBallymount RoadWalkinstownPhone +353 1456 4034Fax +353 1456 4035ItalyInfineon Technologies Italia S.r.l.Industrial SalesRenzo VerzaroVia Vipiteno 4I-20128 MilanoPhone +39 0 2252044448Fax +39 0 2252044033Renzo.Verzaro@infineon.comCOMELEC srlCorso Torino 87/DI-10090 Ferriera di Buttigliera alta(TO)Phone +39 011 9367757Fax +39 011 9366486www.comelec.it, info@comelec.itEBV Regional OfficesI-20092 Cinisello, Balsamo (MI)Via C. Frova, 34Phone +39 02 66096290Fax +39 02 66017020I-41010 Cognento (MO)Via Campagna, 12Phone +39 059 2924/211Fax +39 059 2929/486I-50127 FirenzeVia Panciatichi, 40Palazzo 11Phone +39 05 54369307Fax +39 05 54265240I-80128 Napoli (NA)Via G. Capaldo, 10Phone +39 081 579 97 70Fax +39 081 579 97 70Cell. +39 335 8 39 05 31I-00155 RomaViale Palmiro Togliatti 1639Phone +39 064 063665/789Fax +39 064 063777I-35030 Sarmeola di Rubano (PD)Piazza Adelaide Lonigo, 8/11Phone +39 049 8974701Fax +39 049 8974726I-10156 TorinoCorso Vercelli, 348Phone +39 011 2625690Fax +39 011 2625691NetherlandsPlease contact Infineon TechnologiesFrance S.A.S Industrial SalesEBV Regional OfficeNL-3606 AK MaarssenbroekPlanetenbaan 116Phone +31 346 5830-10Fax +31 346 5830-25PolandEBV Regional OfficesPL-02-672 Warszawaul. Woloska 18Phone +48 22 64023-55Fax +48 22 64023-56PL-50-062 WroclawPl. Solny 16Phone +48 71 34229-44Fax +48 71 34229-10Russia/Ukraine/GUSINTECH electronics GmbHRussia – 125445 MoscowUsievicha 24/2Phone +7 0957975545/35Fax +7 0954518608intech@aha.ruINTECH UkraineUkraine – 02002 KievMariny Raskovoi ul. 13, office 910PO Box 294Phone +38 0445165444Fax +38 0445165444info@intech.com.uaITC MoscowRussia – 105066 Moscow35, Nishnaya Krasnoselskayamoscow@itc-electronics.comPhone +7 4953639575Fax +7 4953639125ITC ElectronicsSaint Petersburg14, Nab.Obvodnogo CanalaPhone +7 8127030006Fax +7 8127030006spb@itc-electronics.comITC NovosibirskRussia – 630091 NovosibirskKrasniy Prospekt 82/1nsk@itc-electronics.comPhone +7 3832277888Fax +7 3833356930158
ITC EkaterinburgRussia – 620014 EkaterinburgVainera str. 55/Bural@itc-electronics.comPhone +7 3433787790Fax +7 3432575396ITC Ukraine, KievUkraine – 02160 Kiev7a, Prospect Vossoedineniyaoffice 107kiev@itc-electronics.comPhone +38 044596890Fax +38 0445011303ITC Kazakhstan, AlmatyKazakhstan – 480008 Almaty162 g, Shevchenko street,almaty@itc-electronics.comPhone +7 3272686514Fax +7 3272686614EBV Regional OfficesRussia – 127486 MoscowKorovinskoye Shosse 10,Build 2, Off.28Phone +7 495 93787-07Fax +7 495 93787-06Ukraine – 03040 KievVasilovskaya str. 14off. 422-423Phone +380 44 49622 26Fax +380 44 49622 28Spain/PortugalSIEMENS S.A.Carmen TrasobaresRonda de Europa 5E- 28760 Tres Cantos – MadridPhone +34 91 5144506Fax +34 91 5147014Mobile +34 607 078949carmen.trasobares@siemens.comInfineon Technolgies AGDomenico BaroneDistribution Sales Office IBERIAc/Chile, 10 - 1a PlantaOficina 141 -Edificio Madrid 92E-28290 Las Rozas de Madrid(Madrid)Phone +34 91 630 5728Fax +34 91 636 4205domenico.barone@infineon.comDachsAvda. Del Progres, 97Pol. Ind. Els GarrofersE-08340 Vilassar de Mar(Barcelona)Tel. +34 93 741 8500Fax +34 93 741 8501EBV Regional OfficesE-08950 Esplugues de Llobregat(Barcelona)Antón Fortuny 14-16 Esc.C 3° 2aPhone +34 93 4733200Fax +34 93 4736389E-28760 Tres Cantos (Madrid)Centro Empresarial EuronovaC/Ronda de Poniente, 4Phone +34 91 8043256Fax +34 91 8044103Sweden/Finland/NorwayInfineon Technologies Sweden ABTommy AnderssonIsafjordsgatan 16S-16481 KistaPhone +46 8 757 4107Fax +46 8 757 4919Tommy.Andersson@infineon.comEBV Regional OfficesS-21 235 MalmöDerbyvägen 20Phone +46 40 5921 00Fax +46 40 5921 01S-19 272 SollentunaSjöängsvägen 7Phone +46 859 4702 30Fax +46 859 4702 31FIN-02240 EspooPihatörmä 1 aPhone +358 927 052790Fax +358 927 095498FIN-90100 OuluNahkatehtaankatu 2Phone +358 85 6249 10Fax +358 85 6249 15Postboks 101, ManglerudRyensvingen 3BN-0680 OsloPhone +47 22 6717 80Fax +47 22 6717 89SwitzerlandInfineon TechnologiesSwitzerland AGThomas SchankatBadenerstrasse 623CH-8048 ZuerichPhone +41 44 4978043Fax +41 44 4978050Thomas.Schankat@infineon.comEBV Regional OfficesCH-8953 DietikonBernstrasse 394Phone +41 44 74561 61Fax +41 44 74561 00CH-1010 LausanneAv. des Boveresses 52Phone +41 216 5401 01Fax +41 216 5401 00Turkeysee Infineon Technologies AGIndustrial Sales GermanyEBV Regional OfficeTR-34742 IstanbulPerdemsaç PlazaBayar Cad. GülbaharSok. No: 17, D: 134 KozyatagiPhone +90 21 646313 52Fax +90 21 646313 55AmericaUSAHeadquartersInfineon TechnologiesIndustrial Power, Inc.1050 Route 22Lebanon, NJ, 08833Phone +1 908 236 5600Fax +1 908 236 5620Info.usa@Infineon.comRegional OfficesEastern RegionInfineon TechnologiesIndustrial Power, Inc.P.O. Box 187Concord, MA 01742 0187Phone +1 781 275 9016Jerry.Gallagher@Infineon.comCentral RegionInfineon TechnologiesIndustrial Power, Inc.165 St James CircleUnion Grove, WI 53182Phone +1 262 878 9898Fax +1 262 878 2898Neil.Perkins@Infineon.comWilliam.Tennie@Infineon.comInfineon TechnologiesIndustrial Power, Inc.21175 Tomball PkwyPMB 710Houston, TX 77070Phone +1 281 37 47622Fax +1 281 374 7621Dorel.Ciornei@Infineon.comWestern RegionInfineon TechnologiesIndustrial Power, Inc.7829 Center Blvd. SESuite 162Snoqualmie, WA 98065Phone +1 425 396 5060Fax +1 425 396 5061Dwight.Harvey@Infineon.comLatin AmericaPlease contact:Infineon TechnologiesIndustrial Power, Inc.in Lebanon, NJInfo.usa@Infineon.comCanadaPlease contact:Infineon TechnologiesIndustrial Power, Inc.in Lebanon, NJInfo.usa@Infineon.comAfricaSouth African RepublicThe Components Group PTY Ltd.91, Silverstone Crescent,Kyalami Business Park, Kyalami1685 Midrand, SouthafricaPhone +27 11 466 1828Fax +27 11 466 1878ExplanationsStacksPresspacksSCR/Diode ModulesIGBT159
Australia/New ZealandInfineon Technologies AustraliaPty. Ltd.Con Tsaousidis885 Mountain HighwayBayswater , Victoria 3153Melbourne Australiacon.tsaousidis@infineon.comVictoriaFastron Technologies PTY. Ltd.Mr. Mike Trubridge25 Kingsley Close3178 Rowville, VICVictoria 3178, AustraliaPhone +61 39763 5155Fax +61 39763 5166AsiaAseanInfineon Technologies AP Pte. Ltd.Daryl Goh8 Kallang SectorSingapore 349282Phone +65 6876 3125Fax +65 6876 3122chung-shuan.goh@infineon.comAchieva Components Pte. Ltd.Rajesh Naik240 Macpherson Road02-03, Pines Industrial BldgSingapore 348574Fax +65 68407638rajeshn@achieva.com.sgKoreaSeoulInfineon Technologies Korea Co.Ltd.Sung-Il.Hong5fl. Infineon Bldg.642 Yeoksam-dong Gangnam-guSeoul Korea 135-910.Fax +82 2 3460 0901Sung-Il.Hong@Infineon.comDABO Industrial Systems Co. Ltd.Kim Chang-SooRm 909, DaeRung TechnoTown-3rd448, KaSan-Dong, KumChon-GuSeoul, KoreaFax +82221073328support@dabois.comChinaHong KongInfineon Technologies HK Ltd.Ma Kwok WaiSuite 302 Level 3Festival Walk, 80 Tat Chee AvenueKowloon Tong, HongKongFax +852 2832 20615Kwokwai.ma@infineon.comShenzhenEurotone Electric LtdBernard YuenRoom 401, Tianan Hi-TechPlaza Tower A Tianan CyberPark, Futian, Shenzhen, ChinaFax: +86 75583438233bernard@etpec.comShanghaiInfineon Technologies InternationalTrade (Shanghai) Co. Ltd.Simon ChenNo. 8, Lane 647, SongTao Road,ZhangJiang Hi-Tech Park, Pudong,Shanghai 201203, P.R.China.Fax +8621 61019420Simon.Chen@infineon.comBeijingBeijing Jingchuan ElectronicTechnology Development Co. Ltd.Zhou Wen DingRM1803, Tower A, Bldg.20Area 1, Fangchengyuan FangzhuangBeijing, China P.C.100078Fax: +86 1087639588jingchuan@a-1.net.cnIndiaBangaloreInfineon Technologies India Pvt. Ltd.Padmanabha Gowda10th Floor, Discover BuildingInternational Tech ParkWhitefield RoadBangalore 560066, IndiaFax +91 8051392333Padmanabha.Gowda@infineon.comArihant ElectricalsRajesh Kumar24/4866, Ansari Road, DaryaGanj,New Delhi - 110002Fax +91 232 73554Rajesh@arihantelectricals.comIngram Micro ElectronicsUmesh Khandelwal159, 1st Floor Okhla IndustrialEstate,Phase 3 Punj Corporate HouseNew Delhi 110020.Fax +91 11 41709187umesh.k@ingrammicro.co.inTaiwanInfineon Technologies Taiwan Ltd.Jeffrey Shen12F-1, No.3-2 Yuan Qu St., NanKang Software Park, TaipeiTaiwan 115, R.O.C.Fax +886 226557505Jeffrey.Shen @infineon.comElecbiz Enterprises Co. Ltd.Roger ShengRoom C, 7F, No. 20,Min Chuan W. Rd.Taipei, Taiwan, R.O.C.Fax +886 225313192rogersheng@elecbiz.com.twYuban & Co.Pang Hsu9F, No. 19-2, San Chong RoadNan-King, 115Taipei, TaiwanFax +886 226550077pang_hsu@yuban.com.twJapanInfineon Technologies Japan K.K.IFX Japan AdresseGate City Osaki East Tower 21F1-11-2 Osaki,Shinagawa-ku, Tokyo,141-0032, JapanPhone +81 35745 7221Fax +81 35745 7413160
Terms and Conditions of DeliveryAll our deliveries and services are exclusively subject to the “GeneralConditions for the Supply of Products and Services of the Electricaland Electronics Industry” recommended by the Zentralverband Elektrotechnik-und Elektroindustrie (ZVEI) e.V.– (Version January 2002),hereinafter referred to as “General Conditions of Supply”. Conflictingor deviating terms and conditions of our customers are rejected, unlessand to the extent we have given our explicit written consent. TheGeneral Conditions of Supply shall apply even where we have performedthe delivery and service without expressly rejecting conflictingor deviating conditions of our customer.Minimum Order ValueOrders will only be handled in whole packing units and multiple ofthese. For order-values below 250 Euro we will charge our customersan additional handling charge of 40 Euro.Data in this Brochure and Product related DataSpecifically due to technological progress we have to reserve the rightto change this brochure and/or product related date at any time.The product data contained in this brochure is exclusively intendedfor technically trained customers and their staff. Our customers andtheir technical departments are required to evaluate the suitabilityof our products for the intended application and the completenessof the product data with respect to such application.This brochure like the relevant product data sheet is describing thespecifications of our products for which a warranty is granted. Anysuch warranty is granted exclusively pursuant to the above GeneralConditions of Supply. There will be no guarantee of any kind for theproduct, any of its characteristics and/or its specifications.Customers that require product information in excess of the data givenin this brochure or which concerns the specific application of ourproduct, are asked to contact our closest sales office.(www.infineon.com ) For those who are specifically interested wemay provide application notes.Dangerous Substances and ApplicationsAccording to technical requirements our products may contain dangeroussubstances. For information on the types in question pleasecontact our closest sales office. (www.infineon.com )Should our customer intend to use the product in aviation applications,in health or live endangering or life support applications, he isrequired to give us notification.For any such applications we urgently recommendn to perform joint Risk and Quality Assessmentsn the conclusion of Quality Agreementsn to establish joint measures of an ongoing product survey,and notify to our customers that we may make delivery depended onthe realization/establishment of any such measures.If and to the extent necessary or required by applicable law, ourcustomers are required to forward equivalent notices to your customers.161
LieferbedingungenFür unsere Lieferungen und Leistungen gelten ausschließlich die„Allgemeinen Lieferbedingungen für Erzeugnisse und Leistungen derElektroindustrie“ des Zentralverbandes Elektrotechnik- und Elektroindustrie(ZVEI) e.V. (Stand: Januar 2002), nachfolgend auch „die AllgemeinenLieferbedingungen“ genannt. Entgegenstehende oder vonden Allgemeinen Lieferbedingungen abweichende Bedingungen desKunden erkennen wir nicht an, es sei denn, wir hätten ausdrücklichschriftlich ihrer Geltung zugestimmt. Die Allgemeinen Lieferbedingungengelten auch dann, wenn wir in Kenntnis entgegenstehenderoder von unseren Allgemeinen Lieferbedingungen abweichenderBedingungen des Kunden die Lieferung an den Kunden vorbehaltlosausführen.MindestbestellwertAufträge werden nur in ganzen Verpackungseinheiten und vielfachendavon abgewickelt. Für Aufträge mit einem Bestellwert unter 250 Euroberechnen wir unseren Kunden eine zusätzliche Bearbeitungsgebührvon 40 Euro.Katalog- und ProduktdatenInhaltliche Änderungen des Katalogs, insbesondere der darin enthaltenenProduktdaten, bleiben – insbesondere infolge technologischerFortentwicklungen –vorbehalten.Die in diesem Katalog enthaltenen Produktdaten sind ausschließlichfür technisch versierte Kunden und/oder Anwender bestimmt. DieBeurteilung der Eignung unserer Produkte für die Kundenanwendungsowie die Beurteilung der bereitgestellten Produktdaten für diese Anwendungobliegt dem Kunden bzw. den technischen Abteilungen desKunden.In diesem Katalog werden ebenso wie auf den einschlägigen Produktdatenblätterndiejenigen Merkmale unserer Produkte beschrieben,für die wir eine liefervertragliche Gewährleistung übernehmen.Eine solche Gewährleistung richtet sich ausschließlich nach Maßgabeder vorgenannten Allgemeinen Lieferbedingungen. Garantienjeglicher Art werden von uns für die in diesem Katalog aufgeführtenProdukte und deren Eigenschaften keinesfalls übernommen.Sollte der Kunde von uns Produktinformationen benötigen, die überden Inhalt dieses Katalogs oder des Produktdatenblatts hinausgehenund insbesondere eine spezifische Verwendung und den Einsatzunseres Produktes betreffen, sollte er sich mit dem für ihn zuständigenVertriebsbüro (www.infineon.com) in Verbindung setzen. FürInteressenten halten wir auch Application Notes bereit.Gefahrenstoffe und gefährliche AnwendungenAufgrund der technischen Anforderungen könnten unsere Produktegesundheitsgefährdende Substanzen enthalten. Bei Rückfragen zuden in den Produkten jeweils enthaltenen Substanzen sollte sich derKunde ebenfalls mit dem für ihn jeweils zuständigen Vertriebsbüro(www.infineon.com) in Verbindung setzen.Sollte der Kunde beabsichtigen, unsere Produkte in Anwendungender Luftfahrt, in gesundheits- oder lebensgefährdenden oder lebenserhaltendenAnwendungsbereichen einzusetzen, bitten wir um Mitteilung.Wir weisen darauf hin, dass wir für diese Fällen die gemeinsame Durchführung eines Risiko- und Qualitätsassessmentsn den Abschluss von speziellen Qualitätssicherungsvereinbarungenn die gemeinsame Einführung von Maßnahmen einer laufendenProduktbeobachtungdringend empfehlen und gegebenenfalls die Belieferung von der Umsetzungsolcher Maßnahmen abhängig machen.Soweit erforderlich und/oder gesetzlich vorgeschrieben, hat der Kundeentsprechende Hinweise an dessen Abnehmer zu geben.162
Infineon Technologies AGMax-Planck-Straße 5D-59581 WarsteinTel. +49 (0) 29 02 7 64-0Fax +49 (0) 29 02 7 64-12 56www.infineon.com5-<strong>2008</strong>-4000
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