Power Management & Multimarket SiC Final Datasheet 5 ...

SiC
Silicon Carbide Diode
5 th Generation thinQ! TM
650V SiC Schottky Diode
IDW 4 0 G 6 5 C 5
Final Datasheet
Rev. 2.0
Power Management & Multimarket

5th Generation thinQ! SiC Schottky Diode
IDW40G65C5
1 Description
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC 1) for target applications
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
ThinQ! Generation 5 represents Infineon leading edge technology for
the SiC Schottky Barrier diodes. Thanks to the more compact design and
thin-wafer technology, the new family of products shows improved
efficiency over all load conditions, resulting from both the improved
thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ! Generation 5 has been designed to complement our
650V CoolMOS families: this ensures meeting the most stringent
application requirements in this voltage range.
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
1 2
1
2
3
3
CASE
Table 1 Key Performance Parameters
Parameter Value Unit
V DC 650 V
Q C ; V R =400V 55 nC
E C ; V R =400V 14 µJ
I F @ T C < 110°C 40 A
Table 2 Pin Definition
Pin 1 Pin 2 Pin 3
n.c. C A
Type / ordering Code Package Marking Related links
IDW40G65C5 PG-TO247-3 D4065C5 www.infineon.com/sic
1) J-STD20 and JESD22
Final Data Sheet 2 Rev. 2.0, 2012-06-28

5th Generation thinQ! TM SiC Schottky Diode
IDW40G65C5
Table of contents
Table of Contents
1 Description .......................................................................................................................................... 2
2 Maximum ratings ................................................................................................................................ 4
3 Thermal characteristics ..................................................................................................................... 4
4 Electrical characteristics ................................................................................................................... 5
5 Electrical characteristics diagrams .................................................................................................. 6
6 Package outlines ................................................................................................................................ 9
7 Revision History ............................................................................................................................... 10
Final Data Sheet 3 Rev. 2.0, 2012-06-28

5th Generation thinQ! TM SiC Schottky Diode
IDW40G65C5
Maximum ratings
2 Maximum ratings
Table 3 Maximum ratings
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Continuous forward current I F – – 40
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C < 110°C, D=1
– – 182 T C = 25°C, t p =10 ms
A
– – 153 T C = 150°C, t p =10 ms
Non-repetitive peak forward current I F,max – – 1432 T C = 25°C, t p =10 µs
i²t value ∫ i²dt – – 166 A²s T C = 25°C, t p =10 ms
Repetitive peak reverse voltage V RRM – – 650 V
– – 118 T C = 150°C, t p =10 ms
Diode dv/dt ruggedness dv/dt – – 100 V/ns V R =0..480 V
Power dissipation P tot – – 183 W T C = 25°C
Operating and storage temperature T j ;T stg -55 – 175 °C
Mounting torque – 50 70 Ncm M3 and M4 screws
3 Thermal characteristics
Table 4 Thermal characteristics TO-247-3
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Thermal resistance, junction-case R thJC – 0.6 0.8
Thermal resistance, junctionambient
Soldering temperature,
wavesoldering only allowed at leads
R thJA
T sold
– – 62
K/W
– – 260 °C
leaded
1.6mm (0.063 in.) from
case for 10 s
Final Data Sheet 4 Rev. 2.0, 2012-06-28

5th Generation thinQ! TM SiC Schottky Diode
IDW40G65C5
Electrical characteristics
4 Electrical characteristics
Table 5 Static characteristics
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
DC blocking voltage V DC 650 – –
I R = 7 mA, T j = 25°C
Diode forward voltage V F – 1.5 1.8 V I F = 40 A, T j =25°C
– 1.8 2.2 I F = 40 A, T j =150°C
Reverse current I R – 2.2 7000 V R =650 V, T j =25°C
– 0.5 1800 µA V R =600 V, T j =25°C
– 8.2 26500 V R =650 V, T j =150°C
Table 6 AC characteristics
Parameter Symbol Values Unit Note/Test Condition
Total capacitive charge
Q c
Min. Typ. Max.
– 55 nC
Total Capacitance C – 1210 –
V R =400 V, di/dt=200A/µs,
I F ≤I F,MAX , T j =150°C.
V R =1 V, f=1 MHz
– 156 – pF V R =300 V, f=1 MHz
– 155 – V R =600 V, f=1 MHz
Final Data Sheet 5 Rev. 2.0, 2012-06-28

I F [A]
I F [A]
P tot [W]
I F [A]
5th Generation thinQ! TM SiC Schottky Diode
IDW40G65C5
5 Electrical characteristics diagrams
Table 7
Power dissipation
Diode forward current
200
180
160
140
120
250
200
150
0.1
0.3
0.5
0.7
1
100
80
100
60
40
50
20
0
25 50 75 100 125 150 175
T C [°C]
P tot =f(T C ); R thJC,max
0
25 50 75 100 125 150 175
T C [°C]
I F =f(T C ); T j ≤175°C; R thJC,max ; parameter D=duty cycle
Table 8
Typical forward characteristics
80
Typical forward characteristics in surge current
400
70
-55°C
350
60
25°C
300
50
100°C
250
-55°C
40
200
25°C
30
20
150°C
175°C
150
100
100°C
150°C
10
50
175°C
0
0 1 2 3
V F [V]
0
0 1 2 3 4 5 6
V F [V]
I F =f(V F ); t p =200 µs; parameter: T j
I F =f(V F ); t p =200 µs; parameter: T j
Final Data Sheet 6 Rev. 2.0, 2012-06-28

Z th,jc [K/W]
C [pF]
Q C [nC]
I R [A]
5th Generation thinQ! TM SiC Schottky Diode
IDW40G65C5
Table 9
Typ. capacitance charge vs. current slope 1)
60
Typ. reverse current vs. reverse voltage
1.E-4
50
1.E-5
40
1.E-6
30
175°C
20
1.E-7
150°C
10
1.E-8
100°C
25°C
-55°C
0
100 300 500 700 900
dI F /dt [A/µs]
1.E-9
100 200 300 400 500 600
V R [V]
Q C =f(di F /dt); T j =150°C; V R =400 V; I F ≤I F,max
1) Only capacitive charge, guaranteed by design.
I R =f(V R ); parameter: T j
Table 10
Max. transient thermal impedance
Typ. capacitance vs. reverse voltage
1
1400
1200
1000
0.1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
800
600
400
200
0.01
1.E-06 1.E-03 1.E+00
t p [s]
Z th,jc =f(t P ); parameter: D=t P /T
0
0.1 1 10 100 1000
V R [V]
C=f(V R ); T j =25°C; f=1 MHz
Final Data Sheet 7 Rev. 2.0, 2012-06-28

E C [µJ]
5th Generation thinQ! TM SiC Schottky Diode
IDW40G65C5
Table 11
Typ. capacitance stored energy
40
35
30
25
20
15
10
5
0
0 200 400 600
V R [V]
E C =f(V R )
Final Data Sheet 8 Rev. 2.0, 2012-06-28

5th Generation thinQ! TM SiC Schottky Diode
IDW40G65C5
6 Package outlines
Figure 1
Outlines TO-247, dimensions in mm/inches
Final Data Sheet 9 Rev. 2.0, 2012-06-28

5th Generation thinQ! TM SiC Schottky Diode
IDW40G65C5
Revision History
7 Revision History
5 th . Generation thinQ! TM SiC Schottky Diode
Revision History: 2012-06-28, Rev. 2.0
Previous Revision:
Revision Subjects (major changes since last version)
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Edition 2012-06-28
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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Due to technical requirements, components may contain dangerous substances. For information on the types in
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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
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failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
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human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Final Data Sheet 10 Rev. 2.0, 2012-06-28

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