Plasma Production

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Process tools & modules Oxford Instruments' System100Pro production tools are built on 200 mm, 300 mm and multiwafer batch process modules and tool platforms which offer excellent uniformity and high-throughput processes on a range of applications. Low-damage ICP GaN etch with Cl 2 -Ar chemistry ■ Our processes are backed by process guarantees to ensure rapid start-up during installation ■ Oxford Instruments’ tools are proven in the field with over 90% uptime 1 Process tool platforms ■ <strong>Plasma</strong>lab ® plasma etch and deposition, including PVD Sapphire & SiC etch for substrate growth preparation for HB LEDs: ICP etched Sapphire, no PR mask remains ■ FlexAL ® atomic layer deposition (ALD) ■ Ionfab ® ion beam etch and deposition ■ Nanofab growth systems for nanowires and nanotubes Process modules Etch ■ ICP ■ RIE ■ Ion beam etch (IBE/IBM, RIBE, CAIBE) Deposition ■ PECVD ■ ICP-CVD ■ ALD ■ PVD (dc/rf sputtering) ■ Ion beam deposition (IBSD, IASD, RIBD) GaAs via: ICP etch REFLOW High rate SiO 2 waveguide PECVD: two 6 µm core splitter samples with 10 µm of BPSG overclad and reflowed 1 including planned downtime Al deposited onto an etched SiO 2 on Si structure; the metal layer follows the contour of the etched substrate very well, even into a notched trench profile
<strong>Production</strong> capability Wafer handling options ■ 200 mm and 300 mm single wafer or cassette load ■ Multi-wafer batch processing for 50 mm (2”) to 100 mm (4”), including cassette loading of batch carrier plates ■ Cassette-to-cassette handling with full wafer tracking and individual wafer process control where required ■ Hexagonal or square robotic handlers, with MESC compatibility allowing further addition of third-party modules ■ E-chuck and/or mechanical clamping options, with He wafer backside cooling ■ Wide temperature range substrate electrodes: -150 °C to 400 °C or 700 °C Cleanroom interface options ■ Ballroom ■ Through-wall ■ Cluster Process control ■ Large wafer area and batch process end-pointing by optical emission spectrometry (OES) ■ OES detects changes in etch by-products or depletion of reactive gas species ■ Predictive chamber cleaning end-pointing ■ Integrated with the PC2000 TM process tool software ■ Laser end-point detection (LEPD) also available for blanket etching or where mask patterns allow, or for deposition monitoring Integrated OES control and monitoring within PC2000 process tool software: OES of SiO 2 etch
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Plasma Production

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