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Normalized Raman Intensity<br />

0,060<br />

0,055<br />

0,050<br />

0,045<br />

0,040<br />

0,035<br />

0,030<br />

0,025<br />

750 800 850 900 950 1000 1050 1100 1150 1200<br />

0,04<br />

0,03<br />

0,02<br />

D1<br />

Si-OH<br />

0,12<br />

0,10<br />

0,08<br />

0,06<br />

0,04<br />

0,02<br />

0,00<br />

750 800 850 900 950 1000 1050 1100 1150 1200<br />

0,84<br />

0,80<br />

0,76<br />

0,72<br />

Si-O-Si<br />

D2<br />

0,01<br />

0,68<br />

0,00<br />

750 800 850 900 950 1000 1050 1100 1150 1200<br />

0,64<br />

750 800 850 900 950 1000 1050 1100 1150 1200<br />

Annealing Temperature (°C)<br />

J. Sol-Gel Sci. Techn. 32 (2004) 345-348<br />

J. Non-Cryst. Solids, 345-346, (2004), 570-574.

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