BUZ900 BUZ901 N–CHANNEL POWER MOSFET - Soemtron.org

MAGNA
TEC
BUZ900
BUZ901
STATIC CHARACTERISTICS (T case = 25°C unless otherwise stated)
BV DSX
BV GSS
V GS(OFF)
V DS(SAT) *
I DSX
yfs*
Characteristic Test Conditions Min. Typ. Max. Unit
V GS = –10V BUZ900 160
Drain – Source Breakdown Voltage
V
I D = 10mA BUZ901 200
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
Drain – Source Cut–Off Current
Forward Transfer Admittance
V DS = 0 I G = ±100µA
V DS = 10V I D = 100mA
V GD = 0 I D = 8A
V DS = 160V
BUZ900
V GS = –10V
V DS = 200V
BUZ901
V DS = 10V I D = 3A
±14
0.15 1.5
12
10
V
V
V
mA
10
0.7 2 S
DYNAMIC CHARACTERISTICS (T case = 25°C unless otherwise stated)
Characteristic Test Conditions Min. Typ. Max. Unit
C iss Input Capacitance
500
V DS = 10V
C oss Output Capacitance
300
f = 1MHz
C rss Reverse Transfer Capacitance
10
pF
t on Turn–on Time
V DS = 20V
100
t off Turn-off Time
I D = 5A
50
ns
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.
150
Derating Chart
125
CHANNEL DISSIPATION (W )
100
75
50
25
0
0 25 50 75 100 125 150
T — CASE TEMPERATURE (˚C)
C
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94