BUZ900 BUZ901 NâCHANNEL POWER MOSFET - Soemtron.org
BUZ900 BUZ901 NâCHANNEL POWER MOSFET - Soemtron.org
BUZ900 BUZ901 NâCHANNEL POWER MOSFET - Soemtron.org
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MAGNA<br />
TEC<br />
<strong>BUZ900</strong><br />
<strong>BUZ901</strong><br />
MECHANICAL DATA<br />
Dimensions in mm<br />
N–CHANNEL<br />
<strong>POWER</strong> <strong>MOSFET</strong><br />
25.0<br />
+0.1<br />
-0.15<br />
8.7 Max.<br />
10.90 ± 0.1<br />
1.50<br />
Typ.<br />
11.60<br />
± 0.3<br />
<strong>POWER</strong> <strong>MOSFET</strong>S FOR<br />
AUDIO APPLICATIONS<br />
39.0 ± 1.1<br />
30.2 ± 0.15<br />
16.9 ± 0.15<br />
1 2<br />
R 4.0 ± 0.1 R 4.4 ± 0.2<br />
TO–3<br />
Pin 1 – Gate Pin 2 – Drain<br />
Ø 20 Max.<br />
Ø 1.0<br />
Case – Source<br />
FEATURES<br />
• HIGH SPEED SWITCHING<br />
• N–CHANNEL <strong>POWER</strong> <strong>MOSFET</strong><br />
• SEMEFAB DESIGNED AND DIFFUSED<br />
• HIGH VOLTAGE (160V & 200V)<br />
• HIGH ENERGY RATING<br />
• ENHANCEMENT MODE<br />
• INTEGRAL PROTECTION DIODE<br />
• P–CHANNEL ALSO AVAILABLE AS<br />
BUZ905 & BUZ906<br />
ABSOLUTE MAXIMUM RATINGS<br />
(T case = 25°C unless otherwise stated)<br />
V DSX Drain – Source Voltage<br />
<strong>BUZ900</strong><br />
160V<br />
<strong>BUZ901</strong><br />
200V<br />
V GSS<br />
I D<br />
I D(PK)<br />
Gate – Source Voltage<br />
Continuous Drain Current<br />
Body Drain Diode<br />
±14V<br />
8A<br />
8A<br />
P D Total Power Dissipation @ T case = 25°C<br />
125W<br />
T stg<br />
T j<br />
R θJC<br />
Storage Temperature Range<br />
Maximum Operating Junction Temperature<br />
Thermal Resistance Junction – Case<br />
–55 to 150°C<br />
150°C<br />
1°C/W<br />
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
MAGNA<br />
TEC<br />
<strong>BUZ900</strong><br />
<strong>BUZ901</strong><br />
STATIC CHARACTERISTICS (T case = 25°C unless otherwise stated)<br />
BV DSX<br />
BV GSS<br />
V GS(OFF)<br />
V DS(SAT) *<br />
I DSX<br />
yfs*<br />
Characteristic Test Conditions Min. Typ. Max. Unit<br />
V GS = –10V <strong>BUZ900</strong> 160<br />
Drain – Source Breakdown Voltage<br />
V<br />
I D = 10mA <strong>BUZ901</strong> 200<br />
Gate – Source Breakdown Voltage<br />
Gate – Source Cut–Off Voltage<br />
Drain – Source Saturation Voltage<br />
Drain – Source Cut–Off Current<br />
Forward Transfer Admittance<br />
V DS = 0 I G = ±100µA<br />
V DS = 10V I D = 100mA<br />
V GD = 0 I D = 8A<br />
V DS = 160V<br />
<strong>BUZ900</strong><br />
V GS = –10V<br />
V DS = 200V<br />
<strong>BUZ901</strong><br />
V DS = 10V I D = 3A<br />
±14<br />
0.15 1.5<br />
12<br />
10<br />
V<br />
V<br />
V<br />
mA<br />
10<br />
0.7 2 S<br />
DYNAMIC CHARACTERISTICS (T case = 25°C unless otherwise stated)<br />
Characteristic Test Conditions Min. Typ. Max. Unit<br />
C iss Input Capacitance<br />
500<br />
V DS = 10V<br />
C oss Output Capacitance<br />
300<br />
f = 1MHz<br />
C rss Reverse Transfer Capacitance<br />
10<br />
pF<br />
t on Turn–on Time<br />
V DS = 20V<br />
100<br />
t off Turn-off Time<br />
I D = 5A<br />
50<br />
ns<br />
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.<br />
150<br />
Derating Chart<br />
125<br />
CHANNEL DISSIPATION (W )<br />
100<br />
75<br />
50<br />
25<br />
0<br />
0 25 50 75 100 125 150<br />
T — CASE TEMPERATURE (˚C)<br />
C<br />
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
MAGNA<br />
TEC<br />
<strong>BUZ900</strong><br />
<strong>BUZ901</strong><br />
9<br />
Typical Output Characteristics<br />
9<br />
Typical Output Characteristics<br />
8<br />
6V<br />
T = 25˚C C<br />
8<br />
T C = 75˚C<br />
7<br />
7<br />
6V<br />
I — D R AIN C U RRENT (A)<br />
D<br />
6<br />
5<br />
4<br />
3<br />
5V<br />
4V<br />
P<br />
CH = 1 25W<br />
3V<br />
I — D R AIN C U RRENT (A)<br />
D<br />
6<br />
5<br />
4<br />
3<br />
5V<br />
4V<br />
P<br />
CH = 1 25W<br />
2<br />
2V<br />
2<br />
3V<br />
1<br />
1<br />
2V<br />
0<br />
0 10 20 30 40 50 60 70 80 90<br />
V DS — DRAIN – SOURCE VOLTAGE (V)<br />
0<br />
0 10 20 30 40 50 60 70 80 90<br />
V DS — DRAIN – SOURCE VOLTAGE (V)<br />
10<br />
Forward Bias Safe Operating Area<br />
100<br />
Transconductance<br />
T = 25˚C<br />
C<br />
V DS= 20V<br />
I — D R AIN C U RRENT (A)<br />
D<br />
1<br />
0.1<br />
DC OPE RATIO N<br />
<strong>BUZ900</strong><br />
<strong>BUZ901</strong><br />
G FS — TRANSCONDUCTANCE (S)<br />
10<br />
1<br />
T = 25˚C<br />
C<br />
T = 75˚C<br />
C<br />
0.01<br />
1 10 100 1000<br />
V DS — DRAIN – SOURCE VOLTAGE (V)<br />
160V<br />
200V<br />
0.1<br />
0 1 2 3 4 5 6 7 8<br />
I — DRAIN CURRENT (A)<br />
D<br />
10<br />
Drain – Source Voltage<br />
vs<br />
Gate – Source Voltage<br />
9<br />
Typical Transfer Characteristics<br />
V DS — DRAIN – SOURCE VOLTAGE (V)<br />
8<br />
6<br />
4<br />
2<br />
I = 6A D<br />
I = 3A D<br />
T = 25˚C<br />
C<br />
I — DRAIN CURRENT (A)<br />
D<br />
8<br />
7<br />
6<br />
5<br />
4<br />
3<br />
2<br />
V DS= 10V<br />
T = 25˚C<br />
C<br />
T = 75˚C<br />
C<br />
T = 100˚C<br />
C<br />
I = 1A D<br />
1<br />
0<br />
0 2 4 6 8 10 12 14<br />
V GS — GATE – SOURCE VOLTAGE (V)<br />
0<br />
0 1 2 3 4 5 6 7 8<br />
V GS — GATE – SOURCE VOLTAGE (V)<br />
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
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