Swedish Research in Microelectronics
Swedish Research in Microelectronics
Swedish Research in Microelectronics
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S w e d i s h F o u n d at i o n f o r s t r at e g i c r e s e a r c h<br />
<br />
<strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
- an evaluation 2008<br />
Conducted by<br />
the <strong>Swedish</strong> Foundation for Strategic <strong>Research</strong> - SSF<br />
the <strong>Swedish</strong> Governmental Agency for Innovation Systems - VINNOVA<br />
and the <strong>Swedish</strong> <strong>Research</strong> Council - VR<br />
SSF-rapport nr 2 • ISSN 1654-9872 • ISBN 978-91-89206-41-0
International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
Graphic production: Hans Melcherson, Tryckfaktorn AB<br />
Pr<strong>in</strong>ted by: Alfa pr<strong>in</strong>t AB, 2008
International Evaluation<br />
of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong><br />
<strong>Microelectronics</strong>
International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong>
Contents<br />
1 Introduction 7<br />
2 Evaluation 11<br />
3 The Evaluation Panel’s Recommendations and Comments 13<br />
4 Summary of Assessments 15<br />
5 Assessments of <strong>Research</strong> Areas 17<br />
Appendix 1: List of evaluated project leaders and rapporteurs 29<br />
Appendix 2: Outl<strong>in</strong>e of Background Report 32<br />
Appendix 3: Executive summaries 33<br />
Appendix 4: Assessment criteria 40<br />
Appendix 5: F<strong>in</strong>ancial support from VR, SSF and VINNOVA (2003-2007) 41<br />
Appendix 6: Background of experts 47<br />
Appendix 7: Abbreviations and acronyms 54
International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong>
Introduction<br />
<br />
1 Introduction<br />
In early 2007, the <strong>Swedish</strong> Foundation<br />
for Strategic <strong>Research</strong> (SSF) proposed<br />
conduct<strong>in</strong>g an evaluation of <strong>Swedish</strong> academic<br />
research <strong>in</strong> microelectronics,<br />
<strong>in</strong>clud<strong>in</strong>g photonics and relevant nanoand<br />
materials science-related projects<br />
and programmes, jo<strong>in</strong>tly together with<br />
the <strong>Swedish</strong> <strong>Research</strong> Council (VR) and<br />
the <strong>Swedish</strong> Governmental Agency for<br />
Innovation Systems (VINNOVA) – the<br />
first comprehensive evaluation of this<br />
research field <strong>in</strong> Sweden. It was decided<br />
that the evaluation should <strong>in</strong>clude<br />
research activities conducted at a<br />
<strong>Swedish</strong> <strong>in</strong>stitution of higher education<br />
from 2003 to 2007. Applied research<br />
and contract research which is ma<strong>in</strong>ly<br />
carried out at research <strong>in</strong>stitutes and<br />
generally not part of the funded programmes<br />
with<strong>in</strong> the three above mentioned<br />
organisations were not considered<br />
to be <strong>in</strong>cluded <strong>in</strong> the present<br />
evaluation.<br />
The three fund<strong>in</strong>g bodies agreed <strong>in</strong><br />
May 2007 to appo<strong>in</strong>t a panel of prom<strong>in</strong>ent<br />
<strong>in</strong>ternational experts with the capacity<br />
to assess the research activities<br />
under evaluation <strong>in</strong> an <strong>in</strong>ternational perspective<br />
without be<strong>in</strong>g <strong>in</strong>fluenced by<br />
considerations at a national level. The<br />
appo<strong>in</strong>ted Panel members were:<br />
Professor Bob Brodersen, University of<br />
California, Berkeley, USA<br />
Professor Stephen Forrest 1 University of<br />
Michigan, USA<br />
Professor Qiut<strong>in</strong>g Huang, ETH, Zurich,<br />
Switzerland<br />
Professor Mikko Paalanen, Hels<strong>in</strong>ki<br />
University of Technology, F<strong>in</strong>land<br />
Professor Klaus Petermann, Technical<br />
University, Berl<strong>in</strong>, Germany<br />
1<br />
Shortly before the Panel started their work, Professor<br />
Stephen Forrest <strong>in</strong>formed the organisers<br />
that due to unexpected circumstances he was unable<br />
to participate <strong>in</strong> the evaluation. To compensate<br />
for the absence of Professor Forrest two remote<br />
evaluators, Professor Markus V. Pessa<br />
(Tampere University of Technology, F<strong>in</strong>land) and<br />
Professor Palle Jeppesen (Technical University of<br />
Denmark), were therefore appo<strong>in</strong>ted.<br />
Professor Krishna Saraswat, Stanford<br />
University, USA<br />
Professor Clivia Sotomayor Torres,<br />
The Catalan Institute of <strong>Research</strong><br />
and Advanced Studies, Barcelona,<br />
Spa<strong>in</strong><br />
Professor Franz Tegude, University of<br />
Duisburg-Essen, Germany<br />
Professor Ingemar Lundström, L<strong>in</strong>köp<strong>in</strong>g<br />
University, was appo<strong>in</strong>ted to chair the<br />
Panel but was not actively <strong>in</strong>volved <strong>in</strong><br />
the evaluation.<br />
The present document reports the<br />
f<strong>in</strong>d<strong>in</strong>gs and recommendations of the<br />
evaluation Panel. The outl<strong>in</strong>e of the report<br />
is as follows: the next chapter provides<br />
details about the purpose of the<br />
evaluation and the evaluation procedure.<br />
The Panel’s general recommendations<br />
and comments are listed <strong>in</strong> chapter<br />
3. Chapter 4 gives a summary of the<br />
assessments made by the Panel. F<strong>in</strong>ally,<br />
chapter 5 conta<strong>in</strong>s detailed assessments<br />
and specific recommendations<br />
Panel members, from left: Klaus Petermann, Mikko Paalanen, Bob Brodersen, Clivia Sotomayor Torres, Franz Tegude, Qiut<strong>in</strong>g Huang and Krishna Saraswat.
International Evaluation of of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
on the evaluated research areas and<br />
entities. The first draft of the evaluation<br />
report was produced while the Panel<br />
was assembled <strong>in</strong> Stockholm. The text<br />
has s<strong>in</strong>ce only been subject to m<strong>in</strong>or<br />
edit<strong>in</strong>g and therefore reflects the orig<strong>in</strong>al<br />
text written by the evaluation Panel<br />
The plann<strong>in</strong>g and organisation of the<br />
entire evaluation process and preparation<br />
of the outl<strong>in</strong>e for the f<strong>in</strong>al report<br />
was carried out by a jo<strong>in</strong>t committee<br />
which consisted of David Edvardsson<br />
and Jonas Björck (VR), Sven-Ingmar<br />
Ragnarsson (VINNOVA) and Anders<br />
Sjölund (SSF).<br />
On behalf of the three fund<strong>in</strong>g bodies<br />
the undersigned hereby express our<br />
deepest gratitude to the participat<strong>in</strong>g<br />
researchers, to the expert Panel for<br />
conduct<strong>in</strong>g the evaluation and also for<br />
its support <strong>in</strong> the preparatory stages of<br />
the project, and to the local organis<strong>in</strong>g<br />
committee.<br />
Stockholm, May 2008<br />
Lars Rask Arne Johansson Jonas Wallberg<br />
<strong>Swedish</strong> Foundation for <strong>Swedish</strong> <strong>Research</strong> Council VINNOVA<br />
Strategic <strong>Research</strong><br />
Natural and Eng<strong>in</strong>eer<strong>in</strong>g Sciences
Introduction<br />
<br />
To<br />
The <strong>Swedish</strong> Foundation for Strategic <strong>Research</strong>,<br />
The <strong>Swedish</strong> Governmental Agency for Innovation Systems and<br />
The <strong>Swedish</strong> <strong>Research</strong> Council<br />
At the request of the above-mentioned organisations, we have evaluated the <strong>Swedish</strong> research <strong>in</strong> <strong>Microelectronics</strong>.<br />
We take full responsibility for the scientific judgements and the recommendations given <strong>in</strong> the report.<br />
Stockholm, April 2008<br />
Prof. Bob Brodersen Prof. Qiut<strong>in</strong>g Huang Prof. Mikko Paalanen Prof. Klaus Petermann<br />
Prof. Krishna Saraswat Prof. Clivia Sotomayor Torres Prof. Franz Tegude
10 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong>
Evaluation<br />
11<br />
2 Evaluation<br />
2.1 Purpose of the Evaluation<br />
The ma<strong>in</strong> purposes of the evaluation<br />
were to <strong>in</strong>form VR, VINNOVA and SSF<br />
about the quality of <strong>Swedish</strong> microelectronics<br />
research as seen <strong>in</strong> an <strong>in</strong>ternational<br />
perspective, to provide an overall<br />
picture of <strong>Swedish</strong> research <strong>in</strong> microelectronics,<br />
and to provide recommendations<br />
for future research fund<strong>in</strong>g programmes.<br />
Specifically, the three fund<strong>in</strong>g<br />
bodies expected advice from the expert<br />
Panel regard<strong>in</strong>g:<br />
• the absolute scientific level and <strong>in</strong>dustrial<br />
relevance of <strong>Swedish</strong> academic<br />
research <strong>in</strong> microelectronics<br />
• which subareas with<strong>in</strong> microelectronics<br />
are particularly weak or<br />
strong <strong>in</strong> an <strong>in</strong>ternational perspective<br />
or of high or low <strong>in</strong>dustrial relevance<br />
• the scientific level of different research<br />
environments<br />
• perceived problems and general observations<br />
regard<strong>in</strong>g the <strong>Swedish</strong><br />
microelectronic research system<br />
and recommendations on what<br />
steps should be taken to improve<br />
this system.<br />
The organis<strong>in</strong>g partners recognise that<br />
it is not an easy task to do a simultaneous<br />
evaluation of bottom-up basic research<br />
conducted under VR auspices<br />
and of large research programmes supported<br />
by VINNOVA or SSF. Although<br />
SSF, VR and VINNOVA together represent<br />
the ma<strong>in</strong> <strong>Swedish</strong> public fund<strong>in</strong>g<br />
bodies for research <strong>in</strong> microelectronics,<br />
they have different central roles. VR is<br />
responsible for fund<strong>in</strong>g and develop<strong>in</strong>g<br />
basic research <strong>in</strong> all academic discipl<strong>in</strong>es<br />
with an emphasis on achiev<strong>in</strong>g<br />
the highest scientific quality and br<strong>in</strong>g<strong>in</strong>g<br />
about development and renewal.<br />
SSF f<strong>in</strong>ances basic research as well as<br />
applied research, provided the research<br />
activities are of excellent scientific quality,<br />
while at the same time contribut<strong>in</strong>g<br />
to the enhancement of Sweden’s longterm<br />
competitiveness. VINNOVA’s particular<br />
sphere of responsibility is needsoriented<br />
research l<strong>in</strong>ked to the ma<strong>in</strong><br />
<strong>in</strong>dustrial sectors, normally co-funded<br />
by <strong>in</strong>dustry, and the development of the<br />
<strong>Swedish</strong> <strong>in</strong>novation system. VINNOVA<br />
judges project proposals both by expected<br />
contribution to economic growth<br />
and by scientific quality.<br />
The above-mentioned differences<br />
are often reflected <strong>in</strong> how evaluations of<br />
funded research activities are normally<br />
performed with<strong>in</strong> each fund<strong>in</strong>g organisation.<br />
The <strong>Swedish</strong> <strong>Research</strong> Council and<br />
its predecessors have a tradition of<br />
conduct<strong>in</strong>g evaluations of entire scientific<br />
fields. By contrast, VINNOVA and<br />
SSF ma<strong>in</strong>ly conduct evaluations at the<br />
programme level primarily of specific efforts<br />
such as VINNOVA’s Competence<br />
Centres and SSF’s comprehensive programmes<br />
and Strategic <strong>Research</strong> Centres.<br />
S<strong>in</strong>ce several research groups <strong>in</strong><br />
the field of microelectronics obta<strong>in</strong><br />
fund<strong>in</strong>g from at least two, and sometimes<br />
all three bodies, apart from other<br />
more scattered national sources and<br />
from <strong>in</strong>ternational sources, the types of<br />
grants and the level of f<strong>in</strong>anc<strong>in</strong>g differ<br />
significantly and make the picture of <strong>in</strong>dividual<br />
project leaders (pr<strong>in</strong>cipal <strong>in</strong>vestigators)<br />
quite complex. It was therefore<br />
thought that a comprehensive evaluation<br />
of the field of microelectronics,<br />
rather than an evaluation of <strong>in</strong>dividual<br />
project leaders, would result <strong>in</strong> a better<br />
overall view.<br />
2.2 Evaluation Process<br />
Each research project or research programme<br />
supported by VR, VINNOVA and<br />
SSF has a pr<strong>in</strong>cipal project leader with<br />
overall responsibility for the project or<br />
the programme. For the purpose of the<br />
present evaluation, the selection of<br />
which project leaders to <strong>in</strong>clude was<br />
based on fulfilment of the two follow<strong>in</strong>g<br />
criteria:<br />
• Project leaders should have received<br />
grants from one or more of the fund<strong>in</strong>g<br />
bodies (the total sum should be<br />
at least SEK 1 million) for research<br />
conducted dur<strong>in</strong>g the period 2003<br />
to 2007.<br />
• The year of first payment had to be<br />
no later than 2005.<br />
Based on these criteria, 111 project<br />
leaders were identified for <strong>in</strong>clusion <strong>in</strong><br />
the evaluation. They are listed <strong>in</strong> Appendix<br />
1.<br />
Subsequently, 24 report<strong>in</strong>g entities<br />
were def<strong>in</strong>ed. The report<strong>in</strong>g entities comprised<br />
one or several researchers work<strong>in</strong>g<br />
with similar research topics. Each report<strong>in</strong>g<br />
entity had a rapporteur<br />
responsible for submitt<strong>in</strong>g a background<br />
report (see Appendix 2 for an outl<strong>in</strong>e of<br />
the background reports) of his/her entity<br />
<strong>in</strong>clud<strong>in</strong>g, an executive summary (Appendix<br />
3) and reports from each project<br />
leader <strong>in</strong> the respective entity.
12<br />
International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
In order to further facilitate the evaluation<br />
of the field of microelectronics,<br />
six research sub-areas were identified<br />
by the three fund<strong>in</strong>g bodies and each<br />
report<strong>in</strong>g entity was assigned to one of<br />
these areas. These sub-areas were:<br />
• Silicon and Wide Bandgap Components<br />
• High Speed Electronics<br />
• Nanoelectronics<br />
• Organic Electronics<br />
• Photonics<br />
• System Design<br />
The selected project leaders received a<br />
first letter of <strong>in</strong>vitation <strong>in</strong> June 2007<br />
with <strong>in</strong>formation on the evaluation and<br />
the <strong>in</strong>clusion criteria and a brief description<br />
of the evaluation process. At about<br />
the same time, the expert Panel received<br />
detailed guidel<strong>in</strong>es for the evaluation<br />
procedure. It was stressed at an<br />
early stage that the evaluation should<br />
focus on research <strong>in</strong> the six different<br />
sub-areas with comments on <strong>in</strong>dividual<br />
report<strong>in</strong>g entities rather than on <strong>in</strong>dividual<br />
project leaders.<br />
The actual evaluation was based on<br />
the background material provided by<br />
the rapporteur and project leaders and<br />
<strong>in</strong>formation gathered at a hear<strong>in</strong>g dur<strong>in</strong>g<br />
the Panel’s visit to Sweden. The<br />
background reports were collected us<strong>in</strong>g<br />
a web-based system dur<strong>in</strong>g the period<br />
December 2007 to March 2008.<br />
Prior to the assembly of the Panel <strong>in</strong><br />
Stockholm, the evaluators were given<br />
access to the background reports us<strong>in</strong>g<br />
the web-based system and provided<br />
prelim<strong>in</strong>ary assessments of the report<strong>in</strong>g<br />
entities. These prelim<strong>in</strong>ary assessments<br />
and comments served as work<strong>in</strong>g<br />
material and provided <strong>in</strong>itial <strong>in</strong>put<br />
for the evaluation. To distribute the<br />
work among the members of the Panel,<br />
one member of the Panel was appo<strong>in</strong>ted<br />
as the ma<strong>in</strong> reviewer and another<br />
member as the second reviewer for one<br />
specific research sub-area. The ma<strong>in</strong><br />
reviewer was responsible for writ<strong>in</strong>g and<br />
summaris<strong>in</strong>g the assessments made by<br />
the whole Panel of the research with<strong>in</strong><br />
the sub-area.<br />
Individual rapporteurs and project<br />
leaders were <strong>in</strong>vited to the Panel hear<strong>in</strong>g<br />
at the <strong>Swedish</strong> <strong>Research</strong> Council between<br />
April 7 and 11, 2008. S<strong>in</strong>ce the<br />
evaluation focused on research with<strong>in</strong><br />
the different report<strong>in</strong>g entities and subareas<br />
rather than on <strong>in</strong>dividual project<br />
leaders, only a limited number of persons<br />
were <strong>in</strong>vited to the hear<strong>in</strong>gs. For<br />
the same reason, it was not considered<br />
feasible to conduct site visits. Each rapporteur<br />
was allowed to <strong>in</strong>vite one to<br />
three additional project leaders to the<br />
hear<strong>in</strong>gs depend<strong>in</strong>g on the size of the<br />
report<strong>in</strong>g entity. Dur<strong>in</strong>g the hear<strong>in</strong>g,<br />
each rapporteur was given 10 m<strong>in</strong>utes<br />
to present an overview of the research<br />
under his/her report<strong>in</strong>g entity. The Panel<br />
then decided on how to use the rema<strong>in</strong><strong>in</strong>g<br />
35 m<strong>in</strong>utes allocated for each<br />
session. Apart from the presentations<br />
and direct questions to rapporteurs and<br />
project leaders, all sessions <strong>in</strong>cluded<br />
general discussions of the <strong>Swedish</strong> research<br />
system, area(s) concerned <strong>in</strong> order<br />
to identify future needs <strong>in</strong>, and opportunities<br />
for <strong>Swedish</strong> research <strong>in</strong><br />
microelectronics.<br />
<strong>Research</strong> activities were evaluated<br />
with regard to their scientific quality <strong>in</strong><br />
an <strong>in</strong>ternational context and their strategic<br />
relevance for Sweden’s long-term<br />
competiveness. Scientific quality was<br />
judged accord<strong>in</strong>g to a five-po<strong>in</strong>t scale<br />
and relevance accord<strong>in</strong>g to a four-po<strong>in</strong>t<br />
scale (Appendix 4).
The Evaluation Panel’s Recommendations and Comments<br />
13<br />
3 The Evaluation Panel’s<br />
Recommendations and<br />
Comments<br />
3.1 Program structure<br />
The <strong>Swedish</strong> microelectronics research<br />
is funded by all three agencies. However,<br />
one of the fund<strong>in</strong>g agencies, SSF,<br />
is presently cover<strong>in</strong>g a large portion of<br />
the research budgets <strong>in</strong> this area. This<br />
is an unbalanced situation and it is the<br />
op<strong>in</strong>ion of the Panel that this should be<br />
changed. The Panel recommends jo<strong>in</strong>t<br />
or coord<strong>in</strong>ated calls for the three fund<strong>in</strong>g<br />
agencies. The calls should cover the<br />
full spectrum of microelectronics studies<br />
from materials, components and circuits<br />
to simulations and software research.<br />
The calls should be open to<br />
both s<strong>in</strong>gle- and multi-discipl<strong>in</strong>e project<br />
proposals. The selection criteria should<br />
<strong>in</strong>clude both scientific excellence and<br />
strategic relevance.<br />
Thematic calls for research proposals<br />
over well-def<strong>in</strong>ed periods of time are<br />
very useful for sett<strong>in</strong>g strategic directions<br />
for <strong>Swedish</strong> research and focus<strong>in</strong>g<br />
resources on acknowledged areas of<br />
importance. These calls should, however,<br />
be complemented by grants that<br />
can be awarded <strong>in</strong> response to fresh<br />
and <strong>in</strong>novative ideas spontaneously. It<br />
is the op<strong>in</strong>ion of the Panel that it should<br />
be possible for researchers with excit<strong>in</strong>g<br />
ideas outside the established wisdom<br />
to formulate a white paper and<br />
submit it to one of the fund<strong>in</strong>g agencies<br />
without hav<strong>in</strong>g to fit to a predef<strong>in</strong>ed call<br />
<strong>in</strong> terms of tim<strong>in</strong>g and theme. Such a<br />
regular fund at the agencies’ discretion<br />
may encourage <strong>in</strong>novation and nurture<br />
unexpected breakthroughs.<br />
The Panel regards the present def<strong>in</strong>ition<br />
of microelectronics research as<br />
too broad <strong>in</strong> Sweden. The present def<strong>in</strong>ition<br />
makes it difficult to make fund<strong>in</strong>g<br />
decision with<strong>in</strong> the same program.<br />
When nanoscience matures and relevance<br />
becomes more important <strong>in</strong> fund<strong>in</strong>g<br />
decisions, one should separate the<br />
research projects with medium- and<br />
long-term relevance <strong>in</strong>to different fund<strong>in</strong>g<br />
programs. In case of nanoelectronics,<br />
this means keep<strong>in</strong>g the projects<br />
aim<strong>in</strong>g towards hybrid technologies<br />
with<strong>in</strong> microelectronics and transferr<strong>in</strong>g<br />
projects with long-term relevance <strong>in</strong>to<br />
the basket of basic science projects.<br />
The Panel found that there is a quite<br />
large cultural gap between academic and<br />
<strong>in</strong>dustrial research groups. ACREO was<br />
seen as an excellent example to facilitate<br />
and ensure technology transfer.<br />
The Panel would like to encourage<br />
<strong>in</strong>terdiscipl<strong>in</strong>ary teams of researchers<br />
from science and eng<strong>in</strong>eer<strong>in</strong>g. This is to<br />
facilitate relevant research and because<br />
<strong>in</strong>dividual researchers may not be capable<br />
of realiz<strong>in</strong>g all the boundary conditions<br />
for mov<strong>in</strong>g basic ideas up the<br />
cha<strong>in</strong> for fruition. Increas<strong>in</strong>gly it is seen<br />
<strong>in</strong>ternationally that the best results <strong>in</strong><br />
research result<strong>in</strong>g <strong>in</strong> <strong>in</strong>dustrial applications<br />
are achieved by <strong>in</strong>terdiscipl<strong>in</strong>ary<br />
teams compris<strong>in</strong>g of researchers from<br />
diverse areas.<br />
S<strong>in</strong>ce advanced semiconductor<br />
manufactur<strong>in</strong>g is no longer present <strong>in</strong><br />
Sweden it is particularly important that<br />
access to state-of-the-art silicon CMOS<br />
(see Appendix 7 for a list of abbreviations<br />
and acronyms) technology is available<br />
to researchers <strong>in</strong>volved <strong>in</strong> system<br />
design. This is be<strong>in</strong>g accomplished now<br />
through foundry access be<strong>in</strong>g made<br />
available through Europractice and Circuits<br />
Multi-Projets. The cost of this will<br />
<strong>in</strong>crease <strong>in</strong> the future, so it will become<br />
an <strong>in</strong>creas<strong>in</strong>g limit on the research if<br />
separate fund<strong>in</strong>g is not made.<br />
3.2 Human resources<br />
The Panel noticed that there is an under-representation<br />
of women scientists<br />
and eng<strong>in</strong>eers <strong>in</strong> <strong>Swedish</strong> microelectronics<br />
and the op<strong>in</strong>ion of the Panel is<br />
that this constitutes an untapped pool<br />
of expertise.<br />
Senior staff (professors) should<br />
have personal salary of at least 75%<br />
paid by their <strong>in</strong>stitutions. Many professors<br />
are expected to externally fund a<br />
large proportion of their salaries which<br />
severely reduces competitiveness and<br />
drives the faculty towards potential conflict<br />
of <strong>in</strong>terest as they must cont<strong>in</strong>ually<br />
be concerned with provid<strong>in</strong>g their own<br />
salary. Also, if salaries are paid by the<br />
<strong>in</strong>stitutions, then sabbaticals will be<br />
possible which would have substantial<br />
benefit to expand<strong>in</strong>g the exposure of<br />
faculty to outside research. If this salary<br />
proposal is not possible, then at<br />
least overhead should not be charged<br />
aga<strong>in</strong>st the salary that the faculty rais-
14 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
es. This overhead policy <strong>in</strong> effect results<br />
<strong>in</strong> a double penalty (requir<strong>in</strong>g the<br />
faculty to raise most of their own salary,<br />
as well as pay<strong>in</strong>g overhead on it) that<br />
faculty <strong>in</strong> most other countries do not<br />
<strong>in</strong>cur.<br />
It was noticed by the Panel that a<br />
large proportion of academics were <strong>in</strong>ternally<br />
promoted to positions <strong>in</strong> microelectronics<br />
at their own University. The<br />
Panel suggests that consideration is<br />
given to encourage external appo<strong>in</strong>tments.<br />
Based on the current age distribution<br />
with few young team leaders, a potential<br />
gap <strong>in</strong> the number of academic<br />
leaders <strong>in</strong> microelectronics could arise.<br />
The growth of researcher positions<br />
takes place through fund<strong>in</strong>g of research<br />
grants, de facto allow<strong>in</strong>g the research<br />
agencies to <strong>in</strong>fluence appo<strong>in</strong>tments and<br />
academic population dynamics <strong>in</strong> universities.<br />
Faculty levels and their research<br />
area distribution should be determ<strong>in</strong>ed<br />
by the ability of universities to<br />
fund positions and by a carefully considered<br />
plan to develop the appropriate<br />
strategic and scientific relevance.<br />
3.3 Infrastructure and equipment<br />
The Panel found that the <strong>in</strong>frastructure<br />
is <strong>in</strong> general well supported (mostly<br />
from the Wallenberg foundation). Centres<br />
already established are work<strong>in</strong>g<br />
very well support<strong>in</strong>g and collaborat<strong>in</strong>g<br />
with each other. There seems to be a<br />
sufficient number of clean rooms for microelectronics<br />
related research, which<br />
will nevertheless benefit from be<strong>in</strong>g<br />
l<strong>in</strong>ked up <strong>in</strong> a national network. The<br />
Panel notes that efforts such as MyFab<br />
are steps <strong>in</strong> the right direction. This network<br />
could <strong>in</strong>clude the clean rooms of<br />
Lund, L<strong>in</strong>köp<strong>in</strong>g and KTH/ Stockholm<br />
University. The support of Myfab and<br />
ma<strong>in</strong>tenance of other labs must be <strong>in</strong>creased<br />
by the agencies. Future systems<br />
will be built with scaled device<br />
and heterogeneous <strong>in</strong>tegration of other<br />
materials on silicon. Because of the basic<br />
nature of these devices the system<br />
performance will be <strong>in</strong>creas<strong>in</strong>gly dependent<br />
on their properties. It will become<br />
<strong>in</strong>creas<strong>in</strong>gly more important for<br />
the system <strong>in</strong>dustries to be competitive<br />
and successful to have better understand<strong>in</strong>g<br />
of new devices, materials and<br />
technologies.<br />
3.4 Modell<strong>in</strong>g and Simulation<br />
As we cross from micro to nano-structures,<br />
the complexity of the device<br />
structures with diverse materials can<br />
not be handled by experimentation<br />
alone as there are too many daunt<strong>in</strong>g<br />
choices. There is an <strong>in</strong>creas<strong>in</strong>g need of<br />
modell<strong>in</strong>g and simulations to narrow<br />
down choices of experiments to be<br />
done. This becomes more critical for<br />
the nanostructures need<strong>in</strong>g quantum<br />
mechanical modell<strong>in</strong>g as the classical<br />
models become <strong>in</strong>adequate. Furthermore,<br />
circuit designers will require compact<br />
models of the new devices for explor<strong>in</strong>g<br />
design with these devices. The<br />
Panel did not see any evidence of the<br />
modell<strong>in</strong>g and simulation activity. This<br />
area should be strongly encouraged <strong>in</strong><br />
the future.<br />
3.5 Bus<strong>in</strong>ess education<br />
The research <strong>in</strong> microelectronics can be<br />
highly effective <strong>in</strong> sp<strong>in</strong>n<strong>in</strong>g off new start<br />
ups, e.g. as occurs <strong>in</strong> the Silicon Valley<br />
<strong>in</strong> the USA. However, for this to happen<br />
a comb<strong>in</strong>ation of excellent technical<br />
and bus<strong>in</strong>ess skills along with ample<br />
availability of venture capital is essential.<br />
The Panel noted that <strong>in</strong> Sweden<br />
this potential is hampered by the small<br />
amount of venture capital available <strong>in</strong><br />
this area and by the lack of bus<strong>in</strong>ess<br />
skills of the entrepreneurs. Tak<strong>in</strong>g clues<br />
from the Silicon Valley, courses on bus<strong>in</strong>ess<br />
and entrepreneurship should be<br />
made available to eng<strong>in</strong>eer<strong>in</strong>g and science<br />
students and availability of venture<br />
capital should be <strong>in</strong>creased by active<br />
market<strong>in</strong>g of relevant <strong>Swedish</strong><br />
research results to <strong>in</strong>vestors worldwide<br />
such as <strong>in</strong> the Silicon Valley.
Summary of Assessments<br />
15<br />
4 Summary of Assessments<br />
Based on the background reports of the<br />
rapporteurs, the Panel hear<strong>in</strong>g and the<br />
remote evaluators’ reports the Panel<br />
found <strong>Swedish</strong> academic research <strong>in</strong><br />
microelectronics to be excellent with<br />
outstand<strong>in</strong>g highlights <strong>in</strong> each of the<br />
six different subareas.<br />
4.1 Silicon and wide bandgap<br />
components<br />
The overall scientific quality for the entities<br />
evaluated <strong>in</strong> this area was found to<br />
be excellent. The relevance ranges<br />
from medium to very high. <strong>Research</strong> activities<br />
<strong>in</strong> silicon and wide bandgap<br />
components are extremely important<br />
for the success of <strong>Swedish</strong> <strong>in</strong>dustry and<br />
have to be encouraged. It is the op<strong>in</strong>ion<br />
of the Panel that it will become more<br />
important to have core competence <strong>in</strong><br />
both these research activities even <strong>in</strong><br />
pure system <strong>in</strong>dustries.<br />
For over three decades, there has<br />
been a quadrupl<strong>in</strong>g of transistor density<br />
and a doubl<strong>in</strong>g of electrical performance<br />
every 2 to 3 years. Silicon transistor technology,<br />
<strong>in</strong> particular CMOS has played a<br />
pivotal role <strong>in</strong> this and will cont<strong>in</strong>ue to do<br />
so. However, there are several technical<br />
issues that are mak<strong>in</strong>g proper device<br />
scal<strong>in</strong>g <strong>in</strong>creas<strong>in</strong>gly difficult. With the<br />
enormous <strong>in</strong>stalled base of silicon manufactur<strong>in</strong>g<br />
and design <strong>in</strong>frastructure it is<br />
highly unlikely that a totally different technology<br />
will be <strong>in</strong> mass production <strong>in</strong> the<br />
foreseeable future. Therefore, to cont<strong>in</strong>ue<br />
the progress of microelectronics, <strong>in</strong>novative<br />
silicon based device structures<br />
capable of CMOS configuration that overcome<br />
the scal<strong>in</strong>g problems, will have to<br />
replace planar bulk CMOS structures.<br />
This will require new structural, material<br />
and fabrication technology solutions that<br />
are generally compatible with current and<br />
forecasted <strong>in</strong>stalled silicon manufactur<strong>in</strong>g.<br />
Examples of novel device structures<br />
are multi gate MOS and examples of novel<br />
materials are high mobility channel materials<br />
like stra<strong>in</strong>ed silicon and germanium,<br />
high dielectric constant gate<br />
dielectrics and metal gates. The Panel<br />
believes that these new technologies will<br />
not only extend the life of Si-based electronics,<br />
but will also provide the platform<br />
for heterogeneous <strong>in</strong>tegration of other<br />
materials and devices not only for comput<strong>in</strong>g<br />
but more importantly for communications,<br />
transport, healthcare, environment,<br />
energy and many other future<br />
applications of electronics. Furthermore,<br />
advanced silicon will also provide a platform<br />
for <strong>in</strong>tegration of potentially revolutionary<br />
non-Si solutions.<br />
4.2 High speed electronics<br />
The overall scientific quality for the entities<br />
evaluated was found to be excellent<br />
whereas the impact and relevance<br />
to <strong>Swedish</strong> <strong>in</strong>dustry is very high <strong>in</strong> the<br />
largest part.<br />
The research area has a long and<br />
successful history <strong>in</strong> Sweden and had a<br />
significant <strong>in</strong>fluence on wireless and<br />
mobile communication, satellite technique,<br />
radar applications, radio astronomy,<br />
sensors and more recently THz-imag<strong>in</strong>g<br />
and related security aspects. The<br />
technology needed for realisation of the<br />
related components is heterogeneous,<br />
and therefore complex, with respect to<br />
the choice of materials, device approaches<br />
and system aspects, <strong>in</strong> contrast<br />
to the digital world which is dom<strong>in</strong>ated<br />
by CMOS technology nearly<br />
exclusively. Today Europe’s wireless <strong>in</strong>dustry<br />
has a lead<strong>in</strong>g position, but key<br />
components like power amplifiers come<br />
from outside. Yet the physical layer<br />
determ<strong>in</strong>es the system performance,<br />
so research <strong>in</strong> this area has to be heterogeneous,<br />
too. Beside CMOS, which<br />
undoubtedly plays an <strong>in</strong>creas<strong>in</strong>gly important<br />
role also for high speed electronics,<br />
III-V and SiC semiconductor and<br />
e.g. ferroelectric based technologies<br />
are important. Especially for future<br />
developments aim<strong>in</strong>g at higher frequencies<br />
and bandwidths, this mix of technologies<br />
is essential for the heterogeneous<br />
<strong>in</strong>tegration approach. This will<br />
also <strong>in</strong>clude, after carefully check<strong>in</strong>g its<br />
application relevance, nano-process<strong>in</strong>g<br />
and nano-components which are emerg<strong>in</strong>g<br />
rapidly <strong>in</strong> Sweden.<br />
4.3 Nanoelectronics<br />
The overall scientific quality of <strong>Swedish</strong><br />
nanoelectronics research was found to<br />
be excellent and the <strong>Swedish</strong> scientists<br />
work<strong>in</strong>g <strong>in</strong> this area are recognized<br />
worldwide. The research <strong>in</strong> nanoelectronics<br />
is closer to basic science than<br />
the research <strong>in</strong> other areas of this evaluation<br />
but has high long term relevance.<br />
Nanoelectronics is a relatively young<br />
research topic with high expectations. It<br />
is still expand<strong>in</strong>g and the <strong>in</strong>ternational<br />
competition is high. The <strong>Swedish</strong> research<br />
groups have been <strong>in</strong>volved <strong>in</strong> this<br />
area from the beg<strong>in</strong>n<strong>in</strong>g and managed to<br />
position themselves very well <strong>in</strong> the competition.<br />
This is demonstrated <strong>in</strong> their<br />
lead<strong>in</strong>g role <strong>in</strong> many EU-funded collaborations<br />
and <strong>in</strong> their large number of citations<br />
and high-quality publications. The
16 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
strength of the <strong>Swedish</strong> research groups<br />
is based on their wise selection of research<br />
topics, expertise <strong>in</strong> materials<br />
growth and excellent <strong>in</strong>frastructure.<br />
With <strong>in</strong>creas<strong>in</strong>g <strong>in</strong>ternational competition<br />
there are big challenges ahead.<br />
Some of the groups with<strong>in</strong> the report<strong>in</strong>g<br />
entity are under-critical <strong>in</strong> size and their<br />
future is unclear due to the retirements or<br />
transfer of personnel. In these cases it is<br />
important for the fund<strong>in</strong>g agencies and<br />
the universities to support the cont<strong>in</strong>uation<br />
of excellent research efforts. The relevance<br />
of nanoelectronics to national <strong>in</strong>dustry<br />
comes from the high number of the<br />
licentiates and PhDs educated <strong>in</strong> this<br />
area. The fund<strong>in</strong>g agencies should recognize<br />
the basic nature of nanoelectronics<br />
research and support it also via the basic<br />
science fund<strong>in</strong>g programs.<br />
4.4 Organic electronics<br />
The scientific quality for the evaluated<br />
entities was found to be excellent. The<br />
evaluated entities have clearly identified<br />
their needs for the challeng<strong>in</strong>g objectives<br />
they have set out to pursue <strong>in</strong> the future.<br />
The relevance of this field at a <strong>Swedish</strong><br />
and European level is very high.<br />
The large area of organic electronics<br />
has been selected for special support<br />
at the European level <strong>in</strong> the 7th Framework<br />
Program under the theme Information<br />
and Communication Technologies.<br />
<strong>Research</strong> <strong>in</strong> organic electronics <strong>in</strong> Sweden<br />
is therefore <strong>in</strong> l<strong>in</strong>e with European<br />
research efforts. In a national perspective,<br />
its relevance is even more profound<br />
due to the high profile national<br />
paper <strong>in</strong>dustry, the energy question and<br />
the l<strong>in</strong>k to biology.<br />
<strong>Swedish</strong> research <strong>in</strong> organic electronics<br />
should be consolidated by def<strong>in</strong><strong>in</strong>g<br />
a strategy on pr<strong>in</strong>ted electronics. A<br />
part of this could <strong>in</strong>clude concerted action<br />
with other Nordic countries, e.g.,<br />
F<strong>in</strong>land, which also has research efforts<br />
<strong>in</strong> pr<strong>in</strong>ted electronics <strong>in</strong> large scale as<br />
well as excellent research toward pr<strong>in</strong>t<strong>in</strong>g<br />
functional sub-micrometer structures.<br />
Further, the value cha<strong>in</strong> <strong>in</strong> organic<br />
electronics should be strengthened<br />
by support<strong>in</strong>g a research l<strong>in</strong>e from materials,<br />
design, characterisation of device-relevant<br />
properties, test<strong>in</strong>g laboratory-scale<br />
components, <strong>in</strong>tegration <strong>in</strong><br />
circuits and test<strong>in</strong>g of cost-efficient volume<br />
manufactur<strong>in</strong>g. This should <strong>in</strong>clude<br />
applications <strong>in</strong> ambient <strong>in</strong>telligence, energy<br />
and medical areas, all of which are<br />
<strong>in</strong>creas<strong>in</strong>g economic activities where<br />
Sweden can secure strong position if a<br />
national strategy becomes a reality.<br />
4.5 Photonics<br />
<strong>Research</strong> <strong>in</strong> this area is be<strong>in</strong>g carried<br />
out <strong>in</strong> Sweden at a very high <strong>in</strong>ternational<br />
level. On the average the research is<br />
rated as excellent and the relevance is<br />
high. <strong>Swedish</strong> researchers work<strong>in</strong>g <strong>in</strong><br />
this area are worldwide recognized.<br />
The ma<strong>in</strong> emphasis of photonics research<br />
<strong>in</strong> Sweden is related to telecommunications.<br />
This is relevant for the<br />
<strong>Swedish</strong> <strong>in</strong>dustry <strong>in</strong> particular when<br />
consider<strong>in</strong>g that Ericsson did return<br />
back to optical fibre communication systems<br />
after merg<strong>in</strong>g with Marconi. Really<br />
outstand<strong>in</strong>g research work has been<br />
conducted on ultra long haul high speed<br />
transmission systems; for future applications,<br />
however, also shorter transmission<br />
l<strong>in</strong>ks will become important. Generally<br />
speak<strong>in</strong>g the research with respect<br />
to optical fibre transmission should be<br />
strengthened <strong>in</strong> areas which are closer<br />
to application.<br />
The majority of projects are related to<br />
photonic materials and devices. This research<br />
has also a significant impact for<br />
the <strong>Swedish</strong> <strong>in</strong>dustry especially with respect<br />
to small and medium enterprises.<br />
With respect to nanophotonics it is still<br />
important to identify activities which are<br />
useful to the development of <strong>Swedish</strong><br />
<strong>in</strong>dustry. These applications may well be<br />
outside the area of telecommunications,<br />
e.g. sens<strong>in</strong>g devices for which the use of<br />
plasmonic waveguides or photonic crystals<br />
may be useful.<br />
The work on light<strong>in</strong>g, where LEDs<br />
will play a very significant role <strong>in</strong> the future,<br />
has also been important. However,<br />
the l<strong>in</strong>k between the research work and<br />
the <strong>in</strong>dustrial potential for Sweden has<br />
still to be developed.<br />
4.6 System design<br />
It is important to note that a system is<br />
only a relative term and that one def<strong>in</strong>ition<br />
of a system is that it is “the level of<br />
abstraction one above the level <strong>in</strong> which<br />
you are work<strong>in</strong>g”. S<strong>in</strong>ce the primary focus<br />
of Sweden’s microelectronic work<br />
has been <strong>in</strong> the area of device and materials<br />
research, the design and optimization<br />
of circuits has been the system<br />
level of <strong>in</strong>terest, with an effort at four<br />
universities. These system (circuit) efforts<br />
conta<strong>in</strong> some outstand<strong>in</strong>g <strong>in</strong>dividual<br />
efforts while others range down to<br />
be<strong>in</strong>g merely good, with the overall assessment<br />
of the research quality be<strong>in</strong>g<br />
rated as excellent. There is also some<br />
<strong>in</strong>consistency <strong>in</strong> this system (circuit) research<br />
with respect to the relevance to<br />
Sweden’s strategic goals, but overall it<br />
is considered high.<br />
The Panel believes that there should<br />
be a change of focus and a significant<br />
<strong>in</strong>crease <strong>in</strong> support. The change of focus<br />
<strong>in</strong>volves mov<strong>in</strong>g to the next level <strong>in</strong><br />
system design, <strong>in</strong> which the circuit<br />
block (the previous focus of the “systems”<br />
research) is just a component<br />
and addresses the realization that, over<br />
the next 10 years, the advances <strong>in</strong><br />
CMOS technology will allow complex<br />
chips that conta<strong>in</strong> over a billion device<br />
elements and therefore will <strong>in</strong> turn allow<br />
complete systems on a chip (SOC).
Assessments of <strong>Research</strong> Areas<br />
17<br />
5 Assessments of <strong>Research</strong> Areas<br />
5.1 Silicon and Wide Bandgap<br />
Components<br />
The progress <strong>in</strong> microelectronics will require<br />
new structural, material and fabrication<br />
technology solutions that are<br />
generally compatible with current and<br />
forecasted <strong>in</strong>stalled silicon manufactur<strong>in</strong>g.<br />
Examples of novel device structures<br />
are multi gate MOS and examples<br />
of novel materials are high mobility<br />
channel materials like stra<strong>in</strong>ed silicon<br />
and germanium, high dielectric constant<br />
gate dielectrics and metal gates. The<br />
Panel believes that these new technologies<br />
will not only extend the life of Sibased<br />
electronics, but will also provide<br />
the platform for heterogeneous <strong>in</strong>tegration<br />
of other materials and devices not<br />
only for comput<strong>in</strong>g but more importantly<br />
for communications, transport, healthcare,<br />
environment, energy and many<br />
other future applications of electronics.<br />
Furthermore, advanced silicon will also<br />
provide platform for <strong>in</strong>tegration of potentially<br />
revolutionary non-Si solutions.<br />
Both these activities are extremely<br />
important for the success of the <strong>in</strong>dustry.<br />
Design of future systems will have<br />
<strong>in</strong>creas<strong>in</strong>gly scaled device and heterogeneous<br />
<strong>in</strong>tegration of other materials<br />
on silicon. The system performance will<br />
be <strong>in</strong>creas<strong>in</strong>gly dependent (good or bad)<br />
on the properties of these devices and<br />
materials. It will become <strong>in</strong>creas<strong>in</strong>gly<br />
more important to have core competence<br />
<strong>in</strong> these areas even <strong>in</strong> pure system<br />
<strong>in</strong>dustries. Thus research <strong>in</strong> these<br />
areas with appropriate connections to<br />
the <strong>in</strong>dustry has to be encouraged.<br />
The entities evaluated <strong>in</strong> this area<br />
span research <strong>in</strong> both areas. The overall<br />
scientific quality by the <strong>in</strong>ternational<br />
standard is excellent and the relevance<br />
ranges from medium to very high. The<br />
KTH group is work<strong>in</strong>g on novel CMOS<br />
and related device structures, fabrication<br />
technology and materials while the<br />
other four groups are work<strong>in</strong>g on heterogeneous<br />
<strong>in</strong>tegration of other materials<br />
and devices. The work at KTH is of very<br />
high quality by <strong>in</strong>ternational standards.<br />
This type of device work is very valuable<br />
to ma<strong>in</strong>ta<strong>in</strong> excellence <strong>in</strong> the circuits<br />
and systems activity. The Uppsala<br />
group is work<strong>in</strong>g on a broad range of <strong>in</strong>dustry<br />
oriented discrete devices for a<br />
variety of electronic systems and solar<br />
cells which has very strong connections<br />
with the <strong>in</strong>dustry. The focus of the research<br />
at L<strong>in</strong>köp<strong>in</strong>g is on growth and<br />
characterization of wide bandgap semiconductors<br />
with applications to highvoltage,<br />
high-power, high-frequency devices<br />
and is well connected to the<br />
<strong>in</strong>dustry. The research <strong>in</strong> the Gallium<br />
Nitride entity is focused on experimental<br />
development of growth techniques<br />
for wide bandgap semiconductors and<br />
material properties related to electronic<br />
and optical applications. The activity <strong>in</strong><br />
the Chalmers group appears to be a collection<br />
of <strong>in</strong>dividual physics oriented<br />
projects and lacks focus.<br />
5.1.1 Comments on report<strong>in</strong>g entities<br />
Silicon <strong>Research</strong> at KTH<br />
The research carried out <strong>in</strong> this entity is<br />
application oriented eng<strong>in</strong>eer<strong>in</strong>g. It covers<br />
a broad spectrum of activities on<br />
novel fabrication processes, materials<br />
and devices with several outstand<strong>in</strong>g<br />
achievements e.g. development of sidewall<br />
transfer lithography for controled<br />
formation of nanostructures and application<br />
to several electronic and optical<br />
devices, low noise, high-k gate dielectrics<br />
for MOSFET, 1/f-noise studies, significant<br />
contributions to sub 100 nm<br />
three-dimensional structure development,<br />
Schottky barrier source/dra<strong>in</strong><br />
technology to lower parasitic resistance,<br />
simple approach for fabrication of<br />
a rectifier based on carbon nanotube<br />
(CNT) network, Si-quantum dots with<br />
outstand<strong>in</strong>g photo-lum<strong>in</strong>iscense results,<br />
SiC-bipolar transistor with world record<br />
1100 V breakdown voltage.<br />
The scientific quality of the research<br />
at KTH is excellent to outstand<strong>in</strong>g and<br />
is at the cutt<strong>in</strong>g edge of technology and<br />
the relevance is very high. The KTH<br />
group has extensive collaboration with<br />
<strong>in</strong>ternational <strong>in</strong>dustry as well as startup<br />
activities and strong activities <strong>in</strong> EU-<br />
FP6 and FP7.<br />
Silicon <strong>Research</strong> at Uppsala University<br />
Silicon research at Uppsala is application<br />
oriented work on discrete devices<br />
<strong>in</strong>volv<strong>in</strong>g synthesis of electronic materials<br />
as well as modell<strong>in</strong>g, design, fabrication<br />
and characterization of discrete<br />
electronic components on the other.<br />
The first category <strong>in</strong>cludes: th<strong>in</strong> piezoelectric<br />
films, SOI materials gate stack<br />
materials, ferroelectric materials. The<br />
second group of activities <strong>in</strong>cludes:<br />
high power, high frequency LDMOS transistors,<br />
solar cell modules, microwave<br />
electro-acoustic components such as<br />
resonators, filters, oscillators, etc, physical<br />
and biochemical electro-acoustic<br />
sensors, components on hybrid Si/SiC<br />
substrates and <strong>in</strong>tegrated antennas.<br />
The scientific quality of the work is excellent<br />
to outstand<strong>in</strong>g.
18 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
The work on one hand is scientifically<br />
oriented and of very high importance<br />
for Sweden´s long-term competiveness.<br />
There appears to be extensive<br />
collaboration with<strong>in</strong> academia and <strong>in</strong>dustry<br />
<strong>in</strong> Sweden and Europe and transfer<br />
of technology to the <strong>in</strong>dustry.<br />
Silicon Carbide <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g<br />
University<br />
The focus of the research is on growth<br />
and characterization of wide bandgap<br />
semiconductors, SiC for high-voltage<br />
and high-power, GaN, AlGaN and AlN for<br />
high-frequency devices. In particular the<br />
work on SiC epitaxial growth technique<br />
us<strong>in</strong>g chlor<strong>in</strong>e conta<strong>in</strong><strong>in</strong>g precursors<br />
and large-area uniform growth of Al-<br />
GaN/GaN HEMT structure us<strong>in</strong>g hot-wall<br />
MOCVD is noteworthy. With<strong>in</strong> the research<br />
entity they have developed new<br />
growth techniques such as chloridebased<br />
SiC growth and hot-wall MOCVD<br />
growth of III-nitrides. They have also<br />
done <strong>in</strong>vestigation of various techniques<br />
to m<strong>in</strong>imize defects. They do<br />
well focused materials research and collaborate<br />
with other groups for design,<br />
process<strong>in</strong>g and evaluation of devices.<br />
The scientific quality of the research is<br />
excellent.<br />
The process and equipment research<br />
is done often <strong>in</strong> collaboration<br />
with <strong>in</strong>dustry. The relevance is medium<br />
to high.<br />
Gallium Nitride <strong>Research</strong> L<strong>in</strong>köp<strong>in</strong>g<br />
University<br />
The research is focused on experimental<br />
development of growth techniques<br />
for wide bandgap semiconductors and<br />
material properties related to electronic<br />
and optical applications. The projects<br />
concern four categories of materials: IIInitrides,<br />
magnetic semiconductor structures,<br />
III-V nitrides and SiC. The work is<br />
strongly fundamental, physics materials<br />
based research. There appears to be a<br />
lack of device/component work. Materials<br />
covered are very important for communication,<br />
power electronics (automotive,<br />
mobile communications),<br />
illum<strong>in</strong>ation, solar energy systems etc.<br />
A stronger coupl<strong>in</strong>g to device people is<br />
needed.<br />
The entity has extensive <strong>in</strong>teraction,<br />
however, mostly with academia <strong>in</strong> Sweden,<br />
Europe, USA, Japan, Australia and<br />
Ch<strong>in</strong>a. Collaboration is ma<strong>in</strong>ly with respect<br />
to fundamental materials research.<br />
Their work has highly esteemed<br />
world lead<strong>in</strong>g position with overall excellent<br />
scientific quality. The research<br />
is of medium to high importance for<br />
Sweden´s long-term competiveness.<br />
Silicon <strong>Research</strong> at Chalmers<br />
The area of the activity is quite broad,<br />
be<strong>in</strong>g a collection of <strong>in</strong>dividual physics<br />
oriented projects without focus and connection<br />
to device community. Projects<br />
<strong>in</strong>clude thermal wafer bond<strong>in</strong>g, nanogaps<br />
for molecular attachment, carbon<br />
nanotubes for <strong>in</strong>tegration <strong>in</strong>to<br />
CMOS technology and for AFM/TEM applications,<br />
MEMS based sensors, biodetectors,<br />
quantum dots, silicon nanowires<br />
and high-k-dielectrics. Work is<br />
more development oriented and should<br />
be of more concern about the state-ofthe-art.<br />
They need closer connection<br />
with the device community. They have<br />
extensive collaboration mostly <strong>in</strong> Europe.<br />
Overall scientific quality of their work<br />
is very good to excellent. The research<br />
is of medium to high importance for<br />
Sweden´s long-term competiveness.<br />
5.2 High Speed Electronics<br />
Today Europe´s wireless <strong>in</strong>dustry has a<br />
lead<strong>in</strong>g position, but key components<br />
like power amplifiers come from outside.<br />
Yet the physical layer determ<strong>in</strong>es<br />
the system performance, so research <strong>in</strong><br />
this area has to be heterogeneous, too.<br />
Beside CMOS, which undoubtedly plays<br />
an <strong>in</strong>creas<strong>in</strong>gly important role also for<br />
high speed electronics, III-V and SiC<br />
semiconductor and e.g. ferroelectric<br />
based technologies are important. This<br />
mix of technologies is essential for a<br />
heterogeneous <strong>in</strong>tegration approach<br />
which will be necessary for future developments<br />
aim<strong>in</strong>g at higher frequencies<br />
and bandwidths. This will also <strong>in</strong>clude,<br />
after carefully check<strong>in</strong>g its application<br />
relevance, nano-process<strong>in</strong>g and nanocomponents<br />
which are emerg<strong>in</strong>g rapidly<br />
<strong>in</strong> Sweden.<br />
The High Speed Electronics research<br />
area is represented by ma<strong>in</strong>ly<br />
two groups, the Microwave Electronics<br />
Laboratory and the THz group, both<br />
from the Microtechnology and Nanoscience<br />
Department at Chalmers. Together<br />
they cover the broad frequency<br />
range from below 1 GHz to above 1 THz.<br />
The Microwave Electronics Laboratory<br />
covers the frequency range up to about<br />
250 GHz and provides the heterogeneous<br />
materials and component basis<br />
from an application oriented, eng<strong>in</strong>eer<strong>in</strong>g<br />
po<strong>in</strong>t of view, cover<strong>in</strong>g the full l<strong>in</strong>e<br />
up to modules and subsystems. They<br />
are well aware of activities <strong>in</strong> the field<br />
worldwide, <strong>in</strong>dicated by creat<strong>in</strong>g the<br />
“European Microwave Interest Group”<br />
recently. The THz group has contributed<br />
high level research <strong>in</strong> a niche, mostly<br />
space applications, but could contribute<br />
to and extend the activities <strong>in</strong> microand<br />
mm-waves of the Microwave Electronics<br />
Laboratory when coupled more<br />
strongly to them by us<strong>in</strong>g their highly <strong>in</strong>dustry<br />
relevant skills and facilities. This<br />
would be beneficial for both groups.<br />
Overall the scientific quality is excellent<br />
whereas the impact and relevance<br />
is very high <strong>in</strong> the largest part.
Assessments of <strong>Research</strong> Areas<br />
19<br />
5.2.1 Comments on report<strong>in</strong>g entities<br />
Microwaves <strong>Research</strong> at Chalmers<br />
The research focus is on electronic<br />
components, circuits and modules for<br />
applications from low GHz to THz frequencies<br />
employ<strong>in</strong>g different semiconductor<br />
technologies: InP based HEMTs,<br />
SiC, AlGaN/GaN from <strong>in</strong> house processes;<br />
and Si-CMOS from foundries. Towards<br />
module preparation also flip chip<br />
mount<strong>in</strong>g is available. Strong activities<br />
are multifunctional MMIC design for all<br />
relevant components, and full range of<br />
high frequency measurements up to<br />
325 GHz. Especially impressive is the<br />
unique and balanced mix of applied science,<br />
eng<strong>in</strong>eer<strong>in</strong>g and pilot l<strong>in</strong>e<br />
process<strong>in</strong>g, which is also open for partners<br />
from academia and <strong>in</strong>dustry, and<br />
has high significance for future developments.<br />
The eng<strong>in</strong>eer<strong>in</strong>g oriented scientific<br />
level is excellent to outstand<strong>in</strong>g. The<br />
impact and relevance of the work is<br />
very high for Sweden’s long-term competiveness<br />
because of their role to provide<br />
guidance to <strong>in</strong>dustry, for e.g. selection<br />
of fabrication processes derived<br />
from research and well educated eng<strong>in</strong>eers<br />
needed for future enabl<strong>in</strong>g technologies.<br />
This claim is really met demonstrated<br />
by the extraord<strong>in</strong>ary mix and number<br />
of <strong>in</strong>dustrial projects and collaborations.<br />
Terahertz Systems <strong>Research</strong> at<br />
Chalmers<br />
The research claim is to focus on new<br />
materials, devices and subsystems <strong>in</strong><br />
the frequency range from 10 GHz to 10<br />
THz for applications radar, THz-imag<strong>in</strong>g,<br />
radio astronomy and wireless communications.<br />
The ma<strong>in</strong> two directions are<br />
Hetero-Barrier-Varactors for high power<br />
THz sources us<strong>in</strong>g mix<strong>in</strong>g, and tuneable<br />
ferroelectric varactors for high Q resonators,<br />
which both are not really new<br />
approaches, but were developed to<br />
show excellent results. A significant<br />
part of support is from the European<br />
Space Agency, and the work therefore<br />
not driven by <strong>in</strong>dustrial needs up to<br />
now.<br />
The scientific level is very good to<br />
excellent. The research is of medium<br />
importance for Sweden´s long-term<br />
competiveness, but <strong>in</strong> a niche, only. It<br />
could be <strong>in</strong>creased significantly by tighter<br />
coupl<strong>in</strong>g with the Microwaves <strong>Research</strong><br />
Group at Chalmers.<br />
5.3 Nanoelectronics<br />
In summary, the Panel does not f<strong>in</strong>d<br />
particular weaknesses <strong>in</strong> <strong>Swedish</strong> nanoelectronics<br />
research. Its scientific level<br />
is excellent. Like <strong>in</strong> other small countries<br />
it has only medium- and long-term<br />
relevance. We recommend separat<strong>in</strong>g<br />
the medium and long term projects <strong>in</strong>to<br />
different fund<strong>in</strong>g programs.<br />
In order to analyze the strategic relevance<br />
of nanoelectronics research it<br />
can be divided <strong>in</strong>to two parts, accord<strong>in</strong>g<br />
to the method used for produc<strong>in</strong>g the<br />
nanosize components. In the traditional<br />
top-down production various lithographic<br />
methods, borrowed from the CMOS<br />
technology, are used for mak<strong>in</strong>g submicrometer<br />
devices. This part of the nanoelectronics<br />
research is CMOS-compatible,<br />
supports directly Si road map<br />
(more Moore), is mostly conducted by<br />
big semiconductor companies, and has<br />
strong short-term relevance.<br />
In the second part of nanoelectronics<br />
research other materials than silicon<br />
and are utilized to develop new bottom-up<br />
methods, such as<br />
self-assembly, to produce new types of<br />
functional nanocomponents. This part<br />
of nanoelectronics research is often<br />
<strong>in</strong>terdiscipl<strong>in</strong>ary, borrows ideas from<br />
material science, chemistry and even<br />
biology, and suits well <strong>in</strong>to the academic<br />
environment. Most of the new production<br />
methods of novel components<br />
are not CMOS-compatible and have only<br />
long-term relevance outside the silicon<br />
roadmap. Some of the materials and<br />
production methods are, however,<br />
CMOS-compatible and can be utilized <strong>in</strong><br />
hybrid nanocomponents on silicon platform<br />
(usually denoted as heterogeneous<br />
<strong>in</strong>tegration). The hybrid technology,<br />
where novel nanoelectronic components<br />
serve e.g. as sensors, is expected to<br />
have strong medium-term relevance.<br />
The <strong>in</strong>tegrated cheap sensor systems<br />
are expected to f<strong>in</strong>d a wide variety of<br />
applications <strong>in</strong> traditional <strong>in</strong>dustry (automotive)<br />
as well as <strong>in</strong> new mass markets<br />
<strong>in</strong> environmental, health care, energy<br />
and biotechnology sectors (see the<br />
strategic European research agenda<br />
ENIAC: www.eniac.eu).<br />
This evaluation of <strong>Swedish</strong> <strong>Microelectronics</strong><br />
research <strong>in</strong>cludes five university<br />
entities <strong>in</strong> the nanoelectronics<br />
basket. None of the teams are directly<br />
connected to the above mentioned first<br />
category, i.e. to silicon road map, and<br />
their research does not have any shortterm<br />
relevance. On the other hand, this<br />
is a wise decision <strong>in</strong> a small country like<br />
Sweden which does not have <strong>in</strong>tegrated<br />
circuit manufactur<strong>in</strong>g. Even <strong>in</strong> US a<br />
very limited number of universities are<br />
<strong>in</strong>volved <strong>in</strong> “more Moore” -type of research.<br />
The research programs of all the five<br />
entities <strong>in</strong>clude strong growth and/or<br />
characterization projects of novel nonsilicon<br />
materials for various nanodevice<br />
applications. All of them are supported<br />
by good <strong>in</strong>frastructure. Most of the<br />
projects have emerged from generous<br />
past <strong>in</strong>vestments <strong>in</strong> <strong>Swedish</strong> material<br />
research. The projects have medium<br />
medium-term strategic relevance for hybrid<br />
technology. The relevance of the
20 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
<strong>Swedish</strong> research effort <strong>in</strong> nanoelectronics<br />
is at least on the same level as<br />
<strong>in</strong> compatible best <strong>in</strong>ternational research<br />
programs.<br />
More than half of the research<br />
projects <strong>in</strong> the nanoelectronics basket<br />
can be characterized to be curiosity<br />
driven basic research (e.g. quantum<br />
comput<strong>in</strong>g) which has high long-term<br />
strategic relevance. Aga<strong>in</strong> the relevance<br />
of the <strong>Swedish</strong> nanoelectronics research<br />
is not lower than <strong>in</strong> similar <strong>in</strong>ternational<br />
projects.<br />
When judg<strong>in</strong>g the strategic relevance<br />
of nanoelectronics research we<br />
have to take <strong>in</strong>to account also the high<br />
number of PhDs produced by this research<br />
area. More than 50 % of the PhD<br />
students have already been hired by private<br />
enterprises. These PhDs will transfer<br />
the latest know-how from academia<br />
to <strong>in</strong>dustry.<br />
What comes to the average absolute<br />
scientific level of the <strong>Swedish</strong> nanoelectronics<br />
research, we judge it to be<br />
excellent <strong>in</strong> <strong>in</strong>ternational rank<strong>in</strong>g. The<br />
judgment is based on the high relative<br />
number of <strong>Swedish</strong> publications <strong>in</strong> high<br />
impact-factor journals (Nature, Nature<br />
Materials, Nano Letters, Physical Review<br />
Letters and Applied Physics Letters...),<br />
on the high personal citation<br />
numbers of the <strong>Swedish</strong> scientists (reflected<br />
<strong>in</strong> high h-<strong>in</strong>dex), and on the demonstrated<br />
<strong>in</strong>ternational leadership of<br />
some of the research teams (organization<br />
of ma<strong>in</strong> topical conferences, <strong>in</strong>vitations<br />
to speak at ma<strong>in</strong> conferences of<br />
the field etc).<br />
5.3.1 Comments on report<strong>in</strong>g entities<br />
Nanotubes <strong>Research</strong> at Chalmers<br />
The CNT research at Chalmers is a relatively<br />
young effort built around strong<br />
expertise on growth, characterization<br />
and theoretical understand<strong>in</strong>g of carbon<br />
nanotubes. The leader of the team is an<br />
<strong>in</strong>ternationally well-known scientist and<br />
an excellent manager of scientific<br />
projects. The other team members are<br />
highly qualified senior scientists, especially<br />
<strong>in</strong> the area of theoretical condensed<br />
matter physics.<br />
The CNT research is very competitive<br />
at the moment. With well selected<br />
research topics and narrow enough focus<br />
the Chalmers team has ma<strong>in</strong>ta<strong>in</strong>ed<br />
the critical size to make a real impact<br />
on this highly contested research area.<br />
The quantity and quality of the scientific<br />
output of the team has been very high.<br />
The 9 Physical Review Letters, 11 Applied<br />
Physical Letters and 4 Nano Letters<br />
prove the orig<strong>in</strong>ality of its research.<br />
Tak<strong>in</strong>g <strong>in</strong>to account the used resources<br />
and person-years the scientific impact<br />
has been better than excellent.<br />
The small group has produced dur<strong>in</strong>g<br />
the report<strong>in</strong>g period an amaz<strong>in</strong>gly<br />
high number of PhDs (10). The group<br />
has paid proper attention to patent<strong>in</strong>g.<br />
The team has been successful <strong>in</strong> develop<strong>in</strong>g<br />
NEMS applications of CNT. Nokia<br />
has been <strong>in</strong>terested <strong>in</strong> these applications.<br />
Even though the nanoelectronics<br />
research outside silicon roadmap (see<br />
above) has usually only long-term relevance,<br />
the strategic relevance of this<br />
project is medium.<br />
The future of this research entity<br />
does not look good, because the two<br />
experimentalists of the team have left<br />
Chalmers. We recommend that Chalmers<br />
will cont<strong>in</strong>ue this excellent basic research<br />
effort by hir<strong>in</strong>g a new senior experimentalist<br />
on this area.<br />
The scientific quality is excellent to<br />
outstand<strong>in</strong>g and the strategic relevance<br />
is high.<br />
Quantum Electronics <strong>Research</strong> at<br />
Chalmers<br />
Quantum electronics research at Chalmers<br />
has long traditions and the team is<br />
<strong>in</strong>ternationally well known. The team <strong>in</strong>cludes<br />
very strong <strong>in</strong>dividual scientists<br />
with complementary expertise. Their<br />
profiles cover the spectrum from basic<br />
science to applications and from theoretical<br />
to experimental skills. The team<br />
has access to state of the art <strong>in</strong>frastructure<br />
<strong>in</strong> MC2. The team has strong<br />
collaborative contacts to excellent foreign<br />
groups. It has acted as a coord<strong>in</strong>ator<br />
<strong>in</strong> many EU-projects, demonstrat<strong>in</strong>g<br />
excellent <strong>in</strong>ternational leadership on<br />
their research area.<br />
The quality and impact of this<br />
team’s scientific output is excellent.<br />
The output dur<strong>in</strong>g the report<strong>in</strong>g period<br />
<strong>in</strong>cludes 2 Nature, 1 Science, 10 Physical<br />
Review Letters, 2 Nano Letters and<br />
1 Nature Physics. This is a remarkable<br />
record for a research group of this size.<br />
The team has produced 13 PhDs<br />
and it has been pay<strong>in</strong>g attention to applications<br />
and collaboration to <strong>in</strong>dustry.<br />
The team does not report any patents.<br />
The team is not report<strong>in</strong>g any future<br />
plans. The retirements of key members<br />
present a challenge but also create an<br />
opportunity to redirect the research<br />
agenda.<br />
The scientific quality is excellent to<br />
outstand<strong>in</strong>g and the strategic relevance<br />
is low.<br />
Nanostructure Physics <strong>Research</strong> at KTH<br />
The KTH team <strong>in</strong> Nanostructure physics<br />
has excellent senior scientists. They<br />
have managed to build a very good <strong>in</strong>frastructure<br />
for their studies. They have<br />
also a strong network of <strong>in</strong>ternational<br />
academic and <strong>in</strong>dustrial collaborators.<br />
Their studies <strong>in</strong> sp<strong>in</strong>-related electronics<br />
have resulted <strong>in</strong> proposal of novel devices<br />
and experimental demonstration<br />
of sp<strong>in</strong>-diode system, with a rectification<br />
ratio larger than 100.<br />
Dur<strong>in</strong>g 2003-2008 the groups has<br />
been very productive and the quality of
Assessments of <strong>Research</strong> Areas<br />
21<br />
their scientific output has been an excellent<br />
level (5 Physical Review Letters,<br />
3 Applied Physics Letters and 3 Nano<br />
Letters), when the size of the research<br />
group is taken <strong>in</strong>to account.<br />
The societal impact of the group has<br />
been very good. They have produced 3<br />
patents and 6 PhDs out of which 5 were<br />
hired by <strong>in</strong>dustry.<br />
The group is small and at the moment<br />
undercritical. In the future the<br />
groups should hire one more senior<br />
member or focus more carefully their<br />
research topics. Otherwise their scientific<br />
impact will suffer.<br />
The scientific quality is excellent<br />
and the strategic relevance is high.<br />
Sp<strong>in</strong>tronics <strong>Research</strong> at KTH<br />
The Sp<strong>in</strong>tronics research team at KTH<br />
is at the moment undercritical (only 2<br />
senior people) but most probably it is<br />
surrounded by a strong scientific community.<br />
The <strong>in</strong>frastructure of the team<br />
seems to be <strong>in</strong> good shape. The small<br />
group size means strong fluctuations <strong>in</strong><br />
fund<strong>in</strong>g and number of personnel, and<br />
longer development times for promis<strong>in</strong>g<br />
research ideas.<br />
The scientific output, normalized by<br />
the team size and the low fund<strong>in</strong>g volume,<br />
is very good (1 Nature Materials,<br />
1 Applied Physics Letters). The team<br />
has made an <strong>in</strong>terest<strong>in</strong>g and highly cited<br />
discovery on magnetism <strong>in</strong> doped<br />
ZnO films. The further development of<br />
this idea has been slow, presumably<br />
due to the small size of the group.<br />
The team has produced 1 PhD, 4<br />
patents and one very promis<strong>in</strong>g <strong>in</strong>vention<br />
for large scale applications. This<br />
<strong>in</strong>vention has high relevance because it<br />
can be utilized with the help of heterogeneous<br />
<strong>in</strong>tegrations <strong>in</strong> mass-produced<br />
sensors.<br />
The future of the group looks weak.<br />
The senior team member is already retired<br />
and the second member has only<br />
a junior position at KTH. We recommend<br />
KTH to secure the future of this<br />
small but promis<strong>in</strong>g research l<strong>in</strong>e.<br />
The scientific quality is very good<br />
and the strategic relevance is high to<br />
very high.<br />
Nanometer Structures <strong>Research</strong> at Lund<br />
University<br />
The Lund Nanoelectronics team forms a<br />
relatively large, well organized and well<br />
managed group of scientists. They are<br />
collaborat<strong>in</strong>g effectively with each other<br />
and have a wide network of foreign partners.<br />
They also have the necessary and<br />
sufficient <strong>in</strong>frastructure to support their<br />
present projects and they are also manag<strong>in</strong>g<br />
the <strong>in</strong>frastructure well. The<br />
present <strong>in</strong>frastructure is the result of a<br />
careful <strong>in</strong>vestment plan over a period of<br />
more than 10 years.<br />
The scientific output of the Lund<br />
team, normalized by the size and resources,<br />
is excellent to outstand<strong>in</strong>g <strong>in</strong><br />
quality and impact. In the growth and<br />
characterization of semiconductor nanowires<br />
the team is one of the two <strong>in</strong>ternational<br />
leaders. The output is well<br />
cited and published <strong>in</strong> journals with relatively<br />
high impact number: the number<br />
of articles <strong>in</strong> Nature Materials (5), Nature<br />
Physics (1), Physical Review Letters<br />
(7), Nano Letters (27) and Applied Physics<br />
Letters (28) is excellent.<br />
The societal impact of the Lund<br />
team <strong>in</strong> terms of PhDs, patents and<br />
sp<strong>in</strong>-off companies is remarkable. The<br />
team has certa<strong>in</strong>ly made a tremendous<br />
effort to make a real impact. In the application<br />
areas outside the silicon roadmap,<br />
without high volume products, the<br />
strategic relevance for Sweden is medium<br />
to high.<br />
The future of the Lund team looks<br />
bright. One of the big challenges ahead<br />
will be the retirement of the present<br />
outstand<strong>in</strong>g leader of the team. Also,<br />
focus of the more mature aspects of<br />
nanowire research towards device-oriented<br />
research is recommended.<br />
The scientific quality is excellent to<br />
outstand<strong>in</strong>g and the strategic relevance<br />
is medium to high<br />
5.4 Organic Electronics<br />
The area of large area organic electronics<br />
has been selected for special support<br />
at European level <strong>in</strong> the 7th Framework<br />
Program under the theme<br />
Information and Communication Technologies.<br />
In particular, the research and<br />
<strong>in</strong>dustrial communities have networked<br />
<strong>in</strong> Europe, form<strong>in</strong>g clusters and, more<br />
importantly, sett<strong>in</strong>g up European Technology<br />
Platforms, supported ma<strong>in</strong>ly by<br />
European <strong>in</strong>dustry, as well as by Public<br />
Authorities and the <strong>Research</strong> <strong>in</strong>stitutions<br />
(higher education and research<br />
centres). The European Technology platforms<br />
of relevance to the research reported<br />
by the units here <strong>in</strong>clude photovoltaics,<br />
photonics, manufactur<strong>in</strong>g and<br />
nanomedic<strong>in</strong>e among others. These European<br />
Technology platforms have published<br />
their Strategic <strong>Research</strong> Agendas<br />
and the topics covered by the report<strong>in</strong>g<br />
units fit very well with the wider effort <strong>in</strong><br />
Europe. In other words, research <strong>in</strong> organic<br />
electronics <strong>in</strong> Sweden is <strong>in</strong> l<strong>in</strong>e<br />
with European research efforts.<br />
In the national context, its relevance<br />
is even more profound due to the high<br />
profile national paper <strong>in</strong>dustry, the energy<br />
question and the l<strong>in</strong>k to biology.<br />
For example:<br />
1) <strong>Research</strong> <strong>in</strong> manufactur<strong>in</strong>g methods<br />
such as roll-to-roll pr<strong>in</strong>t<strong>in</strong>g of organic<br />
electronic components, which has<br />
test beds <strong>in</strong> ACREO, is based on a<br />
long <strong>Swedish</strong> and Nordic <strong>in</strong>dustrial<br />
tradition. The added value is derived<br />
here from novel versatile variations
22 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
us<strong>in</strong>g new organic materials for<br />
cost-efficient electronic applications.<br />
This <strong>in</strong>cludes research <strong>in</strong><br />
pr<strong>in</strong>table functional organic materials.<br />
2) <strong>Research</strong> on specific devices such<br />
as organic transistors and diodes<br />
suitable for manufactur<strong>in</strong>g with rollto-roll<br />
pr<strong>in</strong>t<strong>in</strong>g techniques, which will<br />
be <strong>in</strong>corporated <strong>in</strong> future technology-rich<br />
components, large-area elements<br />
for applications <strong>in</strong> ambient<br />
<strong>in</strong>telligence and <strong>in</strong> the textile <strong>in</strong>dustry.<br />
3) <strong>Research</strong> <strong>in</strong> photovoltaics, address<strong>in</strong>g<br />
the cost-efficiency factor by us<strong>in</strong>g<br />
concepts of nanophotonics, and<br />
<strong>in</strong> biology, explor<strong>in</strong>g new organic materials<br />
for applications <strong>in</strong> the life sciences,<br />
such as microfluidics, electrochemical<br />
circuits, <strong>in</strong>tra-cell<br />
sens<strong>in</strong>g and stem cell differentiation.<br />
The biomedical areas build on<br />
the world-renowned expertise of the<br />
Karol<strong>in</strong>ska Institute through firmly<br />
anchored and fruitful collaboration<br />
Thus, the relevance of this field at national<br />
and European level is very (extremely)<br />
high.<br />
Two research units were evaluated<br />
<strong>in</strong> Organic Electronics, both belong<strong>in</strong>g<br />
to L<strong>in</strong>köp<strong>in</strong>g University and, more specifically,<br />
to the Centre of Organic Electronics<br />
(COE), together they cover key<br />
areas <strong>in</strong> organic electronics from material,<br />
to components, fabrication technologies,<br />
all the way to circuits and applications.<br />
One common aspect of both units is<br />
the successful collaboration with COE<br />
group of Prof M Andersson at Chalmers<br />
University on organic materials.<br />
5.4.1 Comments on report<strong>in</strong>g entities<br />
Organic Electronics <strong>Research</strong> at<br />
L<strong>in</strong>köp<strong>in</strong>g University<br />
The unit has a longer tradition than the<br />
former one. Two aspects are particularly<br />
salient <strong>in</strong> the report<strong>in</strong>g period. One is<br />
the F<strong>in</strong>ite Element simulation methods<br />
developed for the design of electrochemical<br />
systems to be pr<strong>in</strong>ted on paper,<br />
s<strong>in</strong>ce is has a potential predictive<br />
power extend<strong>in</strong>g to the expected device<br />
performance after fabrication. The other<br />
is the work <strong>in</strong> organic photovoltaics<br />
which reached 4 % efficiency by mak<strong>in</strong>g<br />
use of novel designs and emerg<strong>in</strong>g nanophotonic<br />
concepts. The research is<br />
partly evolutionary, build<strong>in</strong>g on solid<br />
foundations of soft matter physics and<br />
optoelectronic device physics applied to<br />
organic materials. Some device-relevant<br />
aspects were not <strong>in</strong>vestigated yet, such<br />
as time-stability of organic devices.<br />
Over the report<strong>in</strong>g period the unit<br />
<strong>in</strong>cluded four Pr<strong>in</strong>cipal Investigators,<br />
tra<strong>in</strong>ed 19 researchers up to PhD/licenctiate<br />
level with a fund<strong>in</strong>g of approximately<br />
SEK 46 M. The Pr<strong>in</strong>cipal Investigators<br />
are <strong>in</strong> their 40s and 50s and<br />
their selected publications are nearly all<br />
<strong>in</strong> high impact journals. They have published<br />
over 130 articles and their comb<strong>in</strong>ed<br />
citations over their careers are<br />
over 9700. There have been 10 patents<br />
filed <strong>in</strong> the report<strong>in</strong>g period.<br />
The scientific quality is excellent<br />
and the strategic relevance is high.<br />
Paper Electronics at L<strong>in</strong>köp<strong>in</strong>g University<br />
The unit performs lead<strong>in</strong>g-edge research<br />
<strong>in</strong> paper electronics and <strong>in</strong> solidstate<br />
electronics with a novel activity <strong>in</strong><br />
basic research <strong>in</strong> organic bioelectronics.<br />
On the technological front a major<br />
achievement is <strong>in</strong> the <strong>in</strong>frastructure<br />
front hav<strong>in</strong>g set up a test manufactur<strong>in</strong>g<br />
laboratory at ACREO which l<strong>in</strong>ks up to<br />
several <strong>in</strong>dustrial beneficiaries. While at<br />
present research is focused on pr<strong>in</strong>t<strong>in</strong>g<br />
features of 10-100 µm, future developments<br />
are foreseen to reduce the feature<br />
size, potentially down to molecular<br />
scale. For the device research the unit<br />
collaborates with lead<strong>in</strong>g laboratories <strong>in</strong><br />
Europe and the Americas. On the more<br />
basic science front the modell<strong>in</strong>g of the<br />
molecular/nano switch and the control<br />
of <strong>in</strong>tra-cell signall<strong>in</strong>g are particular<br />
highlights. From the extensive and <strong>in</strong>timate<br />
co-operation with <strong>in</strong>dustry and the<br />
scope and numbers of patented knowhow,<br />
it is not difficult to see that this<br />
research field and the results of this<br />
unit impact electronics, packag<strong>in</strong>g,<br />
pharmaceutical, optical, energy, display,<br />
security, food and biotechnology-based<br />
<strong>in</strong>dustries.<br />
Over the report<strong>in</strong>g period the unit<br />
<strong>in</strong>cluded three Pr<strong>in</strong>cipal Investigators,<br />
tra<strong>in</strong>ed 15 researchers up to PhD/licenciate<br />
level with a fund<strong>in</strong>g of approximately<br />
SEK 56 M. The Pr<strong>in</strong>cipal Investigators<br />
are <strong>in</strong> their 40s and their<br />
selected publications are nearly all <strong>in</strong><br />
high impact journals. They have published<br />
over 60 articles and their comb<strong>in</strong>ed<br />
citations over their careers are<br />
almost 7000. There have been 17 patents<br />
filed and 7 sp<strong>in</strong> offs set up <strong>in</strong> the<br />
report<strong>in</strong>g period.<br />
The scientific quality is excellent<br />
and the relevance is very high.<br />
5.5 Photonics<br />
The ma<strong>in</strong> emphasis of the Photonics research<br />
<strong>in</strong> Sweden is related to telecommunications.<br />
This is relevant for Sweden<br />
<strong>in</strong> particular when consider<strong>in</strong>g that<br />
Ericsson did return back to optical fiber<br />
communication systems after merg<strong>in</strong>g<br />
with Marconi.<br />
The <strong>Research</strong> work on optical fibre<br />
transmission systems is <strong>in</strong> particular<br />
be<strong>in</strong>g carried out at Chalmers. In the<br />
past the activities concentrated there
Assessments of <strong>Research</strong> Areas<br />
23<br />
on ultra long haul high speed systems<br />
and important scientific achievements<br />
had been achieved. With respect to <strong>in</strong>dustrial<br />
relevance (<strong>in</strong> particular with respect<br />
to Ericsson) it will be important to<br />
consider high capacity data transmission<br />
also for shorter transmission distances<br />
(e.g. fibre-to-the-home or local<br />
area networks). There are a lot of ideas<br />
under way for future projects <strong>in</strong> this direction<br />
at Chalmers especially with respect<br />
to 100 Gb-Ethernet, but it must<br />
be checked whether such a small group<br />
will be able to handle all these projects<br />
and still achiev<strong>in</strong>g world lead<strong>in</strong>g results.<br />
Optical fibre transmission is also<br />
considered at KTH <strong>in</strong> terms of quantum<br />
cryptography. Even though the research,<br />
be<strong>in</strong>g carried out there is really outstand<strong>in</strong>g<br />
from the scientific po<strong>in</strong>t of<br />
view, there is little impact on the <strong>in</strong>dustry<br />
<strong>in</strong> Sweden, s<strong>in</strong>ce the key distribution<br />
via quantum cryptography is still a niche<br />
application.<br />
With respect to optical fibre transmission<br />
it is thus recommended that<br />
the research will be strengthened <strong>in</strong> areas<br />
which are closer to application.<br />
The majority of projects be<strong>in</strong>g carried<br />
out <strong>in</strong> Sweden <strong>in</strong> the “Photonics”<br />
area are related to photonic materials<br />
and devices. In particular, the work be<strong>in</strong>g<br />
carried out at Chalmers and at the<br />
KTH on semiconductor lasers and high<br />
speed modulators is outstand<strong>in</strong>g and<br />
has a substantial <strong>in</strong>dustrial impact; e.g.<br />
with respect to Syntune, Zarl<strong>in</strong>k as component<br />
manufactures or to help Ericsson<br />
to work on advanced systems research<br />
with state-of-the-art devices.<br />
Even though the panel did get the impression<br />
of a good cooperation between<br />
Chalmers and KTH on this subject there<br />
may still room for <strong>in</strong>tensified collaboration.<br />
The applications for the research<br />
work at KTH on nanophotonics are not<br />
as obvious, even though the work is of<br />
high scientific quality. It will be important<br />
to identify activities which are useful<br />
to the development for the <strong>Swedish</strong><br />
<strong>in</strong>dustry. These applications may be<br />
well outside of the area of telecommunications,<br />
e.g. sens<strong>in</strong>g devices for which<br />
the use of plasmonic waveguides or<br />
photonic crystals may be quite useful.<br />
Other non-telecom driven areas <strong>in</strong>volve<br />
the research work on liquid crystals,<br />
conducted at Chalmers. Even<br />
though there is no real display <strong>in</strong>dustry<br />
<strong>in</strong> Sweden, <strong>in</strong>terest<strong>in</strong>g application areas<br />
had been identified (weld<strong>in</strong>g helmet)<br />
support<strong>in</strong>g <strong>in</strong>novative <strong>Swedish</strong> products.<br />
Very important has also been the<br />
work on light<strong>in</strong>g where LED:s will play a<br />
very important role <strong>in</strong> the future, but<br />
the l<strong>in</strong>k between the research work and<br />
the <strong>in</strong>dustrial potential for Sweden has<br />
still to be developed.<br />
5.5.1 Comments on report<strong>in</strong>g entities<br />
Photonic communication research at<br />
Chalmers<br />
Scientific quality: The group has a very<br />
high reputation <strong>in</strong> high speed optical fibre<br />
transmission. Outstand<strong>in</strong>g results<br />
have also been achieved <strong>in</strong> the area of<br />
fibre optical parametric amplifiers (world<br />
lead<strong>in</strong>g group) and <strong>in</strong> “optical sampl<strong>in</strong>g”.<br />
Outstand<strong>in</strong>g theoretical work has<br />
been performed with respect to polarization<br />
mode dispersion and polarization<br />
dependent loss.<br />
Impact and relevance: With respect<br />
to the work of optical sampl<strong>in</strong>g, the<br />
company PicoSolve has been established.<br />
The company has presently 6<br />
employees, but significant growth can<br />
be expected. Extensive work is be<strong>in</strong>g<br />
done on optical performance monitor<strong>in</strong>g<br />
on a fibre l<strong>in</strong>e <strong>in</strong>stalled between Stockholm<br />
and Hudiksvall, which turns out to<br />
be quite relevant to the <strong>in</strong>dustrial partners<br />
<strong>in</strong>volved.<br />
Future: Future activities will, e.g., <strong>in</strong>volve<br />
activities <strong>in</strong> the area of 100 Gb-<br />
Ethernet and activities on shorter l<strong>in</strong>ks,<br />
<strong>in</strong>clud<strong>in</strong>g l<strong>in</strong>ks with multimode fibres,<br />
borrow<strong>in</strong>g techniques from mobile transmission.<br />
Personnel and Infrastructure: The<br />
group <strong>in</strong>volves about 12 people, and related<br />
to this number the group produces<br />
a high amount of outstand<strong>in</strong>g research.<br />
Peter Andrekson did also manage to get<br />
fund<strong>in</strong>g for <strong>in</strong>vestments, so that he can<br />
use state of the art equipment.<br />
Collaboration: The group is <strong>in</strong>volved<br />
<strong>in</strong> excellent <strong>in</strong>ternational and national<br />
networks, which is expressed also by<br />
the <strong>in</strong>volvement <strong>in</strong> several EU projects.<br />
The local cooperation with the group on<br />
photonic components (Anders Larsson)<br />
is also very efficient.<br />
Overall scientific quality of their work<br />
is outstand<strong>in</strong>g and relevance is very<br />
high.<br />
Photonic component research at L<strong>in</strong>köp<strong>in</strong>g<br />
University<br />
Scientific quality: Outstand<strong>in</strong>g results<br />
have been achieved <strong>in</strong> the area of ZnO<br />
materials and devices. The <strong>in</strong>ternational<br />
visibility is documented by a large<br />
number of <strong>in</strong>vited talks around the<br />
world. However, <strong>in</strong> the period 2003 -<br />
2007, there is only one successful PhD<br />
(to be f<strong>in</strong>ished <strong>in</strong> 2008).<br />
Impact and relevance: The work may<br />
be of high relevance for the light<strong>in</strong>g <strong>in</strong>dustry.<br />
There are <strong>in</strong>dustrial contacts to<br />
Osram and there is a company<br />
StormLED for market<strong>in</strong>g patents which<br />
have been filed with<strong>in</strong> the group.<br />
Future: A lot of ideas are be<strong>in</strong>g created<br />
<strong>in</strong> this group <strong>in</strong>volv<strong>in</strong>g devices with<br />
nanostructures and nano-rods and organic-<strong>in</strong>organic<br />
devices. In this respect<br />
the group (ma<strong>in</strong>ly Magnus Willander<br />
himself) is very creative.<br />
Personnel and Infrastructure: In the
24 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
past the group had been very small<br />
(only about 2 PhD students) and was<br />
thus under-critical. Now the situation<br />
seems to get better; and <strong>in</strong>deed the<br />
topic of the research with respect to efficient<br />
light<strong>in</strong>g is very important. With<br />
respect to <strong>in</strong>frastructure a new MOCVD<br />
system is just be<strong>in</strong>g set up, so that an<br />
adequate <strong>in</strong>frastructure is available.<br />
Collaboration: Magnus Willander is<br />
coord<strong>in</strong>at<strong>in</strong>g a European project and<br />
there are several <strong>in</strong>ternational collaborations;<br />
<strong>in</strong>ternal cooperations are not<br />
as obvious.<br />
Overall scientific quality of their work<br />
is excellent and the relevance is medium.<br />
Quantum optics <strong>Research</strong> at KTH<br />
Scientific quality: The group is conduct<strong>in</strong>g<br />
excellent research <strong>in</strong> the area of<br />
quantum cryptography. They have a lot of<br />
highly cited research papers and they are<br />
develop<strong>in</strong>g really new ideas like the “decoy<br />
state quantum cryptography”. This<br />
research work is a rather basic research<br />
which, however, might have significant<br />
impact <strong>in</strong> generat<strong>in</strong>g new ideas <strong>in</strong> the<br />
wider range of quantum electronics.<br />
Impact and relevance: Even though<br />
a secure key transmission is quite important,<br />
the direct cooperation with <strong>in</strong>dustrial<br />
companies is still weak, and<br />
thus, there is little impact on the <strong>in</strong>dustry<br />
<strong>in</strong> Sweden. There is some <strong>in</strong>terest<br />
from the defence department of Sweden.<br />
Future: There are a lot of ideas<br />
around <strong>in</strong> this group which may be important<br />
for an improved basic understand<strong>in</strong>g<br />
of Quantum Optics.<br />
Personnel and Infrastructure: Due to<br />
a lack of f<strong>in</strong>ancial fund<strong>in</strong>g the group has<br />
become smaller and one must be careful<br />
that the size of this group does not<br />
become undercritical.<br />
Collaboration: The success of this<br />
group is very well documented by the<br />
<strong>in</strong>volvement <strong>in</strong> a large number of EU<br />
projects. Presently, the fraction of EU<br />
fund<strong>in</strong>g approaches 50 % which is perhaps<br />
already too high for a stable development.<br />
The success <strong>in</strong> European<br />
projects is also documented by the Descartes<br />
Prize <strong>in</strong> 2004.<br />
Overall scientific quality of their work<br />
is excellent and relevance is medium.<br />
Photonic devices <strong>Research</strong> at Chalmers<br />
Scientific quality: In particular the work<br />
on VCSEL:s and disk lasers is very impressive.<br />
These contributions are really<br />
at the highest <strong>in</strong>ternational level, <strong>in</strong>clud<strong>in</strong>g<br />
the activities of extend<strong>in</strong>g the emission<br />
wavelength up to 1.55 µm for lasers<br />
on GaAs substrates. The work on<br />
opto-electronic A/D converters is <strong>in</strong>terest<strong>in</strong>g<br />
with high sampl<strong>in</strong>g rates of 40<br />
GS/s (G samples/s), but the competition<br />
with Electronics is difficult to beat.<br />
With respect to liquid crystals very<br />
promis<strong>in</strong>g research work is be<strong>in</strong>g conducted<br />
with respect to very fast ( ~ µs)<br />
devices.<br />
Impact and relevance: The laser activities<br />
are of a high level both with repect<br />
to basic physics but they have also<br />
a big <strong>in</strong>dustrial impact as demonstrated,<br />
e.g., by the cooperation with Zarl<strong>in</strong>k.<br />
With respect to liquid crystals applications<br />
are be<strong>in</strong>g explored for a new type<br />
of weld<strong>in</strong>g mask visor capable of stroboscopically<br />
follow<strong>in</strong>g the light <strong>in</strong>tensity<br />
dur<strong>in</strong>g pulsed weld<strong>in</strong>g. The <strong>in</strong>dustrial impact<br />
for the work on opto-electronic A/D<br />
is still very weak.<br />
Future: The future work on lasers will<br />
be directed to higher speed (40 Gbit/s)<br />
and wavelength extension which is very<br />
relevant. The relevance is also high for<br />
the liquid crystal work. The future plans<br />
for the activities <strong>in</strong> Optics are not as<br />
clear.<br />
Personnel and Infrastructure: The<br />
number of PhD students is reasonable<br />
with an adequate <strong>in</strong>frastructure.<br />
Collaboration: The high level of <strong>in</strong>ternational<br />
cooperation is underl<strong>in</strong>ed by<br />
the <strong>in</strong>volvement <strong>in</strong> several European<br />
projects. With respect to the laser work<br />
the group has an outstand<strong>in</strong>g <strong>in</strong>ternational<br />
visibility.<br />
Overall scientific quality of their work<br />
is excellent and relevance is high.<br />
Photonic and microwave eng<strong>in</strong>eer<strong>in</strong>g<br />
<strong>Research</strong> at KTH<br />
Scientific quality: This is a very large<br />
group with a large number of really<br />
world lead<strong>in</strong>g research contributions <strong>in</strong><br />
particular with respect to the 1.3 µm<br />
VCSEL (<strong>in</strong> cooperation with Chalmers)<br />
and the 100 Gbit/s modulator. Impressive<br />
results have also been achieved <strong>in</strong><br />
the area of Nanophotonics, <strong>in</strong> particular<br />
the experimental evidence of negative<br />
refraction <strong>in</strong> Photonic crystals is remarkable.<br />
Impact and relevance: An impressive<br />
number of sp<strong>in</strong>-off companies have<br />
been established. Intensive cooperation<br />
exists <strong>in</strong> the field of laser diodes with<br />
the sp<strong>in</strong>-off company Syntune and with<br />
Zarl<strong>in</strong>k. The excellent results on high<br />
speed modulators enable the group to<br />
play a major part <strong>in</strong> a new CELTIC<br />
project (100 Gb-Ethernet) <strong>in</strong> cooperation<br />
with Ericsson. Furthermore a lot of<br />
outstand<strong>in</strong>g results have been obta<strong>in</strong>ed<br />
<strong>in</strong> the area of photonic crystals, but the<br />
applications are not as obvious.<br />
Future: Visionary plans exist with respect<br />
to functional photonic materials,<br />
nanophotonics and high capacity optical<br />
<strong>in</strong>formation systems. These plans are<br />
very ambitious and care must be taken<br />
that activities are identified which can<br />
be transferred to exist<strong>in</strong>g or new <strong>Swedish</strong><br />
companies.<br />
Personnel and Infrastructure: 47<br />
PhDs/Lic have been graduated dur<strong>in</strong>g
Assessments of <strong>Research</strong> Areas<br />
25<br />
the last 5 years which is a very satisfactory<br />
number.<br />
Collaboration: The group is engaged<br />
<strong>in</strong> a large number of EU- and other <strong>in</strong>ternational<br />
projects. The group has a high<br />
<strong>in</strong>ternational visibility.<br />
Overall scientific quality of their work<br />
is excellent and the relevance is high.<br />
Photonic materials <strong>Research</strong> at<br />
Chalmers<br />
Scientific quality: Good results have<br />
been obta<strong>in</strong>ed <strong>in</strong> cooperation with KTH<br />
on grow<strong>in</strong>g AlN/GaN superlattice materials<br />
with MBE. It is remarkable, that<br />
good results have been obta<strong>in</strong>ed also <strong>in</strong><br />
devices with organic materials.<br />
Impact and relevance: The group<br />
had been quite successful <strong>in</strong> grow<strong>in</strong>g<br />
superlattice materials, a possible application<br />
might be <strong>in</strong> the area of quantum<br />
cascade lasers, but this has still to<br />
be proven.<br />
Future: S<strong>in</strong>ce the group has been<br />
shr<strong>in</strong>k<strong>in</strong>g considerably, it will be difficult<br />
to build up aga<strong>in</strong> a group of significant<br />
<strong>in</strong>ternational visibility.<br />
Personnel and Infrastructure: The<br />
group has become now quite small (only<br />
3 persons and 2 of them are just leav<strong>in</strong>g,<br />
lack of critical mass) and new <strong>in</strong>vestment<br />
is required.<br />
Collaboration: There is some cooperation<br />
with KTH on AlN/GaN superlattices,<br />
but based on the very small group<br />
much more cooperation would be required.<br />
Even with<strong>in</strong> Chalmers a much<br />
more <strong>in</strong>tense cooperation would be necessary.<br />
The European collaborations<br />
are also weak, dur<strong>in</strong>g the report<strong>in</strong>g period<br />
the group had not been <strong>in</strong>volved <strong>in</strong><br />
any European project.<br />
Overall scientific quality of their work<br />
is good and relevance is low.<br />
5.6 System Design<br />
It is important to note that a system is<br />
only a relative term and that one def<strong>in</strong>ition<br />
of a system is that it is “the level of<br />
abstraction one above the level <strong>in</strong> which<br />
you are work<strong>in</strong>g”. S<strong>in</strong>ce the primary focus<br />
of Sweden’s Microelectronic work<br />
has been <strong>in</strong> the area of device and materials<br />
research, the design and optimization<br />
of circuits has been the system<br />
level of <strong>in</strong>terest, with an effort at 4 Universities.<br />
These system (circuit) efforts<br />
conta<strong>in</strong> some outstand<strong>in</strong>g <strong>in</strong>dividual efforts<br />
while others range down to be<strong>in</strong>g<br />
merely good, with the overall assessment<br />
of the research quality be<strong>in</strong>g rated<br />
as excellent. There is also some <strong>in</strong>consistency<br />
<strong>in</strong> this system (circuit) research<br />
with respect to the relevance to Sweden’s<br />
strategic goals, but overall it is<br />
considered high.<br />
The level of excellence <strong>in</strong> research<br />
quality arises from the <strong>in</strong>ternational recognition<br />
and publication <strong>in</strong> the top <strong>in</strong>ternational<br />
eng<strong>in</strong>eer<strong>in</strong>g journals and conferences<br />
and the sophistication of the<br />
<strong>in</strong>tegrated circuits which have been designed.<br />
The excellence <strong>in</strong> relevance<br />
stems from tra<strong>in</strong><strong>in</strong>g of students which<br />
are <strong>in</strong> a particularly high demand <strong>in</strong><br />
<strong>Swedish</strong> <strong>in</strong>dustry as well as the focus<br />
on telecommunication build<strong>in</strong>g block circuits<br />
which are central to an important<br />
part of Sweden’s economy. One of the<br />
primary issues which keep these efforts<br />
from be<strong>in</strong>g at the highest <strong>in</strong>ternational<br />
level is the relatively small level of fund<strong>in</strong>g<br />
(compared to many other programs<br />
<strong>in</strong> microelectronics) which results <strong>in</strong><br />
some of these be<strong>in</strong>g funded at almost<br />
sub critical levels at least compared to<br />
<strong>in</strong>ternational norms.<br />
It is recommended that there are<br />
two changes which are needed to br<strong>in</strong>g<br />
these efforts to the outstand<strong>in</strong>g level.<br />
One is that there should be a change of<br />
focus and a significant <strong>in</strong>crease <strong>in</strong> support.<br />
The change of focus <strong>in</strong>volves mov<strong>in</strong>g<br />
to the next level <strong>in</strong> system design, <strong>in</strong><br />
which the circuit block (the previous focus<br />
of the “systems” research) is just a<br />
component and addresses the realization<br />
that, over the next 10 years, the<br />
advances <strong>in</strong> CMOS technology will allow<br />
complex chips that conta<strong>in</strong> over a billion<br />
device elements and therefore will <strong>in</strong><br />
turn allow complete systems on a chip<br />
(SOC). These SOC’s will conta<strong>in</strong> multiple<br />
analog and digital circuits as well as<br />
multiple (possibly multicore) embedded<br />
processors to be <strong>in</strong>tegrated. These<br />
complex SOC’s, will implement not only<br />
the signal process<strong>in</strong>g and communication<br />
algorithms, but protocols and user<br />
<strong>in</strong>terfaces at a level of flexibility which<br />
must be obta<strong>in</strong>ed at the lowest possible<br />
cost and power. The programm<strong>in</strong>g<br />
task of these highly parallel architectures<br />
will require new comput<strong>in</strong>g models,<br />
which are as yet not understood. Of<br />
particular importance to SOC design,<br />
relevant to <strong>Swedish</strong> <strong>in</strong>dustry, will be<br />
chips that implement flexible radio networks.<br />
It is encouraged that cross discipl<strong>in</strong>ary<br />
efforts which couple this SOC research<br />
direction to new device and material<br />
components be <strong>in</strong>cluded, with the<br />
goal of allow<strong>in</strong>g unique and possibly revolutionary<br />
new capabilities. <strong>Research</strong> <strong>in</strong><br />
advanced packag<strong>in</strong>g concepts will be<br />
required to merge these two areas,<br />
s<strong>in</strong>ce the CMOS fabrication will be performed<br />
at foreign foundries which will<br />
allow use of the most advanced technology<br />
at a relatively low cost to the<br />
system researchers.<br />
Another important research direction<br />
is to use the exponentially <strong>in</strong>creas<strong>in</strong>g<br />
digital capability of CMOS to compensate<br />
for the limitations or to allow<br />
exploitation of these new devices and<br />
materials to meet novel or more demand<strong>in</strong>g<br />
application requirements. This<br />
extends even to the compensation of<br />
impairments of <strong>in</strong>tegrated CMOS analog
26 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
circuits which will be <strong>in</strong>creas<strong>in</strong>gly difficult<br />
to design as the technology is exponentially<br />
scaled to ever smaller and<br />
denser SOC’s. This optimization should<br />
be performed <strong>in</strong> close cooperation with<br />
the ultimate application, which will <strong>in</strong>sure<br />
relevance to present and potentially<br />
new <strong>Swedish</strong> companies.<br />
In order to support the above research<br />
agenda it will be necessary to<br />
develop new SOC level design methodologies<br />
as well as simulators and optimizers.<br />
These should be able to exploit<br />
design tools and simulators which support<br />
not only advanced CMOS technology,<br />
but also the new components com<strong>in</strong>g<br />
from the device and material<br />
research. S<strong>in</strong>ce this activity will cover<br />
research that ranges from basic to application<br />
driven with strong <strong>in</strong>dustrial<br />
relevance it does not naturally fit with<strong>in</strong><br />
the scope of one of the three fund<strong>in</strong>g<br />
agencies (VR, SSF and V<strong>in</strong>nova). It is<br />
therefore recommended that such a<br />
program have fund<strong>in</strong>g participation from<br />
all three.<br />
Such an <strong>in</strong>tegrated approach to the<br />
research across what is def<strong>in</strong>ed as <strong>Microelectronics</strong><br />
<strong>in</strong> Sweden will allow advances<br />
<strong>in</strong> CMOS technology to be exploited<br />
<strong>in</strong> ways that are uniquely<br />
beneficial to <strong>Swedish</strong> strategic <strong>in</strong>terests.<br />
5.6.1 Comments on report<strong>in</strong>g entities<br />
System Design <strong>Research</strong> at KTH<br />
The report<strong>in</strong>g entity covered many activities<br />
dur<strong>in</strong>g the report<strong>in</strong>g period, <strong>in</strong>clud<strong>in</strong>g:<br />
• Low power RF and mixed signal circuits<br />
for convergent wireless (we<br />
take it to mean comb<strong>in</strong>ed wide- and<br />
local area applications) handhelds<br />
• Software def<strong>in</strong>ed radio<br />
• Low power digital design, chip communication<br />
and <strong>in</strong>terconnect design<br />
• Technology to pr<strong>in</strong>t RFID and other<br />
circuits and systems on paper<br />
The areas of activities have are of<br />
very high importance for Sweden´s<br />
long-term competiveness and research<br />
carried out are on the whole of excellent<br />
quality. The nascent pr<strong>in</strong>ted circuits<br />
on paper activities have the potential to<br />
have very high impact.<br />
The RF-IC activities peaked at the<br />
beg<strong>in</strong>n<strong>in</strong>g of the report<strong>in</strong>g period, with<br />
the publication of a highly <strong>in</strong>tegrated<br />
s<strong>in</strong>gle-chip wireless LAN transceiver <strong>in</strong><br />
RF CMOS. Subsequently the group has<br />
redirected its efforts towards reconfigurable<br />
and software def<strong>in</strong>ed radio concepts<br />
and test circuits, notably A/D<br />
converters and subsampl<strong>in</strong>g techniques.<br />
These activities are of very<br />
good to excellent scientific quality, and<br />
prepare them well to rise from a highly<br />
regarded RF and mixed signal IC group<br />
to one of the academic leaders <strong>in</strong> the<br />
field.<br />
The <strong>in</strong>itial activities <strong>in</strong> pr<strong>in</strong>ted paper<br />
electronics are quite unique <strong>in</strong> the<br />
world, which impressed the reviewers<br />
most. Though not yet very advanced, it<br />
is a new field where the <strong>in</strong>vestigators<br />
can be expected to make their mark scientifically,<br />
and create significant impact<br />
<strong>in</strong> <strong>in</strong>dustry.<br />
System Design <strong>Research</strong> at Lund<br />
University<br />
The report<strong>in</strong>g entity has been dedicated<br />
to circuit and system design excellence<br />
for many years. The report<strong>in</strong>g period co<strong>in</strong>cided<br />
with the f<strong>in</strong>al phase of its fund<strong>in</strong>g<br />
but many activities have been carried<br />
out despite the retirement of the<br />
pr<strong>in</strong>cipal <strong>in</strong>vestigator and graduation of<br />
many doctoral students.<br />
The report<strong>in</strong>g entity has a pool of<br />
<strong>in</strong>dustrial sponsors, <strong>in</strong>clud<strong>in</strong>g such<br />
names as Ericsson, Ericsson Mobile<br />
Platform, Inf<strong>in</strong>eon and United <strong>Microelectronics</strong><br />
Corporation, Taiwan, which have<br />
served to ensure that their activities are<br />
of very high importance for Sweden´s<br />
long-term competiveness. The quality of<br />
research carried out is on the whole excellent.<br />
Their stand<strong>in</strong>g <strong>in</strong> the academic<br />
world has been excellent also, although<br />
the reviewers regret that the fund<strong>in</strong>g<br />
ramp downwards dur<strong>in</strong>g the report<strong>in</strong>g<br />
period may well hamper the future of<br />
Lund as one of the leaders <strong>in</strong> <strong>in</strong>tegrated<br />
circuits for communications.<br />
For the report<strong>in</strong>g period, circuits<br />
such as 26 GHz VCO and 60 GHz power<br />
amplifiers, beam-form<strong>in</strong>g transmitter<br />
and novel LNA and mixer structures<br />
have been developed. Many patents<br />
have been filed by partner companies<br />
such as Ericsson, which testify the <strong>in</strong>novativeness<br />
of the <strong>in</strong>ventions.<br />
Digital design also play an active<br />
part <strong>in</strong> the activities of the report<strong>in</strong>g entity<br />
dur<strong>in</strong>g the report<strong>in</strong>g period. Embedded<br />
architectures have been developed,<br />
and realized <strong>in</strong> some cases <strong>in</strong> VLSI<br />
form, for various communications applications<br />
<strong>in</strong>clud<strong>in</strong>g MIMO and holographic<br />
imag<strong>in</strong>g applications employ<strong>in</strong>g<br />
two-dimensional Fast Fourier Transform.<br />
The reviewers are pleased to learn<br />
that a new Industrial Excellence Centre<br />
for Systems on Chip has recently been<br />
funded and established. Hopefully this<br />
will carry the torch of the report<strong>in</strong>g entity<br />
forward, and cultivate coherence between<br />
the analogue, digital and embedded<br />
software activities <strong>in</strong> the future.<br />
System Design <strong>Research</strong> at Chalmers<br />
The exploitation of future scaled technology<br />
to achieve flexible computation<br />
with improved power efficiency, its application<br />
to portable devices such as<br />
video and image process<strong>in</strong>g usable for<br />
multimedia, software design suitable<br />
for parallel and flexible processors, are<br />
extremely relevant to both communica-
Assessments of <strong>Research</strong> Areas<br />
27<br />
tions and computer <strong>in</strong>dustries <strong>in</strong> the<br />
SOC era.<br />
The relevance of the FlexSoc project<br />
is therefore outstand<strong>in</strong>g. Towards the<br />
objectives of a flexible system on chip<br />
the report<strong>in</strong>g entity made excellent<br />
progress. The multi-processor architecture<br />
activities resulted <strong>in</strong> significant advances<br />
<strong>in</strong> power efficiency, execution<br />
bandwidth while ma<strong>in</strong>ta<strong>in</strong><strong>in</strong>g programmability.<br />
A significant effort is made to<br />
improve embedded software for multi<br />
processor architecture, although the<br />
functional programm<strong>in</strong>g and software<br />
verification activities have not been<br />
geared towards the FlexSoc activities.<br />
The VLSI group has explored key areas<br />
of gate level design for low leakage<br />
and low power <strong>in</strong> sleep mode, as well<br />
as macro model<strong>in</strong>g of power consumption<br />
<strong>in</strong> circuits and memory. Integration<br />
of key components such as multipliers<br />
and data paths with flexible <strong>in</strong>terconnects<br />
has been carried out to verify the<br />
accuracy of power model<strong>in</strong>g. Work has<br />
also been carried out on model<strong>in</strong>g of<br />
substrate noise generated by digital circuitry<br />
and their potential impact on analog<br />
circuits <strong>in</strong> a mixed signal environment.<br />
This effort is of very good quality<br />
s<strong>in</strong>ce it is <strong>in</strong> the catch-up phase relative<br />
to the state-of-the-art.<br />
Overall the report<strong>in</strong>g entity at a relatively<br />
low level of fund<strong>in</strong>g has carried<br />
out work of very high importance for<br />
Sweden´s long-term competiveness with<br />
excellent scientific quality, which prepares<br />
them well to rise up to a lead<strong>in</strong>g<br />
position among the <strong>in</strong>ternational academic<br />
research groups <strong>in</strong> the same<br />
area.<br />
System Design <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g<br />
University<br />
The report<strong>in</strong>g entity centers round the<br />
Str<strong>in</strong>gent <strong>Research</strong> Center. The ma<strong>in</strong><br />
themes of research, namely <strong>in</strong>tegrated<br />
circuits and systems for communications<br />
and microprocessors, and is of<br />
high importance for Sweden´s long-term<br />
competiveness. The researchers are<br />
well connected with lead<strong>in</strong>g companies<br />
such as Ericsson and Intel, and have<br />
been very active <strong>in</strong> sp<strong>in</strong>-off companies<br />
that aim at a high potential for expansion.<br />
The quality of research is outstand<strong>in</strong>g<br />
<strong>in</strong> the area high-performance<br />
circuits and excellent otherwise. They<br />
have a strong presence <strong>in</strong> the <strong>in</strong>ternational<br />
research community, and are<br />
among a small number of academic research<br />
group<strong>in</strong>gs <strong>in</strong> the world that are<br />
capable of mak<strong>in</strong>g a regular contribution<br />
to the International Solid-State Circuits<br />
Conference, which is one of the strongest<br />
<strong>in</strong>dicators that several of the sub<br />
groups <strong>in</strong> the Str<strong>in</strong>gent center enjoy a<br />
status of high regard among their <strong>in</strong>ternational<br />
academic peers.<br />
The Str<strong>in</strong>gent Center is strong <strong>in</strong> digital<br />
circuits and systems. Highlight of digital<br />
processor design is a jo<strong>in</strong>t publication<br />
with world lead<strong>in</strong>g Intel on one of the<br />
latter’s latest microprocessors. The<br />
emergent activities <strong>in</strong> digital baseband<br />
modem, a field requir<strong>in</strong>g substantial<br />
knowledge and understand<strong>in</strong>g of wireless<br />
communications, have burst <strong>in</strong>to<br />
the <strong>in</strong>ternational arena with the group’s<br />
first publication on an embedded multipurpose<br />
DSP for DVB-H and other OFDM<br />
based application standards. Design<br />
and test<strong>in</strong>g of embedded systems have<br />
their own place amongst their peers, with<br />
their share of the most <strong>in</strong>fluential papers<br />
at DATE <strong>in</strong> the past 10 years.<br />
Outside the traditional stronghold of<br />
digital design, the Center has recently<br />
expanded <strong>in</strong>to RF circuits for reconfigurability,<br />
A/D & D/A converters etc,<br />
which is beg<strong>in</strong>n<strong>in</strong>g to reach excellence.<br />
The reviewers also note positively that<br />
collaboration with material scientists on<br />
the use of TCAD for RF power amplifier<br />
design us<strong>in</strong>g novel devices such as SiC<br />
transistors, extends the center’s <strong>in</strong>fluence<br />
to their more science-centric colleagues.
28 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong>
Appendix<br />
29<br />
Appendix 1. Evaluated project leaders and rapporteurs<br />
<strong>Research</strong> sub-area/Report<strong>in</strong>g Entity Rapporteur Project Leaders<br />
Silicon and Wide Bandgap Components<br />
Silicon <strong>Research</strong> at KTH Östl<strong>in</strong>g, Mikael Hallén, Anders<br />
Hellström, Per-Erik<br />
L<strong>in</strong>narsson, Margareta<br />
L<strong>in</strong>nros, Jan<br />
Willén, Bo<br />
Zhang, Shi-Li<br />
Östl<strong>in</strong>g, Mikael<br />
Silicon <strong>Research</strong> at Uppsala University Katardjev, Ilia Berg, Sören<br />
Katardjev, Ilia<br />
Olsson, Jörgen<br />
Rydberg, Anders<br />
Silicon Carbide <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Janzén, Erik Bergman, Peder<br />
University<br />
Henry, Anne<br />
Janzén, Erik<br />
Kakanakova, Anelia<br />
Son, NT<br />
Gallium Nitride <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Monemar, Bo Buyanova, Ir<strong>in</strong>a<br />
University<br />
Chen, Weim<strong>in</strong><br />
Darakchieva, Vanya<br />
Monemar, Bo<br />
Paskov, Plamen<br />
Silicon <strong>Research</strong> at Chalmers Engström, Olof Bengtsson, Stefan<br />
Engström, Olof<br />
Enoksson, Peter<br />
Lundgren, Per<br />
High Speed Electronics<br />
Microwaves <strong>Research</strong> at Chalmers Zirath, Herbert Grahn, Jan<br />
Rorsman, Niklas<br />
Starski, Piotr<br />
Swahn, Thomas<br />
Zirath, Herbert<br />
Terahertz Systems <strong>Research</strong> at Chalmers Stake, Jan Gevorgian, Spartak<br />
Stake, Jan
30 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
<strong>Research</strong> sub-area/Report<strong>in</strong>g Entity Rapporteur Project Leaders<br />
Nanoelectronics<br />
Nanotubes <strong>Research</strong> at Chalmers Campbell, Eleanor Campbell, Eleanor<br />
Gorelik, Leonid<br />
K<strong>in</strong>aret, Jari<br />
Shekhter, Robert<br />
Svensson, Krister<br />
Quantum Electronics <strong>Research</strong> at Chalmers Dels<strong>in</strong>g, Per Claeson, Tord<br />
Dels<strong>in</strong>g, Per<br />
Kubatk<strong>in</strong>, Sergey<br />
Kuzm<strong>in</strong>, Leonid<br />
Lombardi, Filomena<br />
Wend<strong>in</strong>, Göran<br />
Nanostructure Physics <strong>Research</strong> at KTH Haviland, David Haviland, David<br />
Korenivski, Vladislav<br />
Sp<strong>in</strong>tronics <strong>Research</strong> at KTH Rao, K Venkat Belova, Lyubov<br />
Rao, K Venkat<br />
Nanometer Structures <strong>Research</strong> at Lund Samuelson, Lars Deppert, Knut<br />
University<br />
Montelius, Lars<br />
Pistol, Mats-Erik<br />
Samuelson, Lars<br />
Tegenfeldt, Jonas<br />
Thelander, Claes<br />
Wacker, Andreas<br />
Wallenberg, Re<strong>in</strong>e<br />
Wernersson, Lars-Erik<br />
Xu, Hongqi<br />
Organic Electronics<br />
Organic Electronics <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Inganäs, Olle Forchheimer, Robert<br />
University<br />
Inganäs, Olle<br />
Stafström, Sven<br />
Zozoulenko, Igor<br />
Paper Electronics <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Berggren, Magnus Berggren, Magnus<br />
University<br />
Fahlman, Mats<br />
Lögdlund, Michael<br />
Photonics<br />
Photonic Communication <strong>Research</strong> Andrekson, Peter Andrekson, Peter<br />
at Chalmers<br />
Karlsson, Magnus<br />
Photonic Components <strong>Research</strong> at Willander, Magnus Hu, Q.H.<br />
L<strong>in</strong>köp<strong>in</strong>g University<br />
Nour, Omer<br />
Willander, Magnus<br />
Zhao, Qiang X<strong>in</strong>g
Appendix<br />
31<br />
<strong>Research</strong> sub-area/Report<strong>in</strong>g Entity Rapporteur Project Leaders<br />
Quantum Optics <strong>Research</strong> at KTH Björk, Gunnar Björk, Gunnar<br />
Karlsson, Anders<br />
Photonic Devices <strong>Research</strong> at Chalmers Larsson, Anders Galt, Sheila<br />
Larsson, Anders<br />
Rudquist, Per<br />
Wang, Shum<strong>in</strong><br />
Photonic and Microwave Eng<strong>in</strong>eer<strong>in</strong>g Thylén, Lars Anand, Sr<strong>in</strong>ivasan<br />
<strong>Research</strong> at KTH<br />
Bergl<strong>in</strong>d, Eilert<br />
Hammar, Mattias<br />
Jaskorzynska, Bozena<br />
Lourdudoss, Sebastian<br />
Marc<strong>in</strong>kevicius, Saulius<br />
Pasiskevicius, Valdas<br />
Qiu, M<strong>in</strong><br />
Schatz, Richard<br />
Thylén, Lars<br />
Westergren, Urban<br />
Wos<strong>in</strong>ski, Lech<br />
Photonic Materials <strong>Research</strong> at Chalmers Andersson, Thorvald Andersson, Thorvald<br />
System Design<br />
System Design <strong>Research</strong> at KTH Ismail, Mohammed Dubrova, Elena<br />
Ismail, Mohammed<br />
Rusu, Ana<br />
Signell, Svante<br />
Zheng, Li-Rong<br />
System Design <strong>Research</strong> at Lund Yuan, Jiren Nilsson, Peter<br />
University<br />
Sjöland, Henrik<br />
Yuan, Jiren<br />
Öwall, Viktor<br />
System Design <strong>Research</strong> at Chalmers Stenström, Per Hughes, John<br />
Jeppson, Kjell<br />
Larsson-Edefors, Per<br />
Stenström, Per<br />
System Design <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Svensson, Christer Alvandpour, Atila<br />
University<br />
Dabrowski, Jerzy<br />
Eles, Petru<br />
Liu, Dake<br />
Peng, Zebo<br />
Svensson, Christer<br />
Wahab, Qamar-ul<br />
Wanhammar, Lars<br />
Vesterbacka, Mark
32 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
Appendix 2. Outl<strong>in</strong>e of background report<br />
Background report (rapporteur)<br />
Summary<br />
Summary of research with<strong>in</strong> the report<strong>in</strong>g<br />
entity (to be used <strong>in</strong> the report by<br />
the evaluators). L<strong>in</strong>ks can be provided<br />
to one or more webpages where further<br />
background <strong>in</strong>formation of the respective<br />
research groups with<strong>in</strong> the report<strong>in</strong>g<br />
entity can be found.<br />
F<strong>in</strong>ancial Support<br />
F<strong>in</strong>ancial support dur<strong>in</strong>g the period<br />
2003-2007. Please complete the preentered<br />
data with other important<br />
grants (greater than SEK 100 000/year)<br />
were the rapporteur (or the project leader)<br />
is grant holder. Note: Project leaders<br />
have the possibility to provide such <strong>in</strong>formation<br />
<strong>in</strong> the background report under<br />
the tab “Other <strong>in</strong>formation and technical<br />
feedback” (see below).<br />
Scientific results and impact<br />
Field 1. Summarize the most significant<br />
scientific achievements and results for<br />
the period 2003-2007 from your report<strong>in</strong>g<br />
entity.<br />
Field 2. Summarize the most significant<br />
achievements for application/implementation<br />
of results 2003-2007 from<br />
your report<strong>in</strong>g entity (e.g. for <strong>in</strong>dustry or<br />
other sectors of society), eg. patents,<br />
licenses, sp<strong>in</strong>-off companies.<br />
PhD/Lic<br />
PhD/Lic degrees awarded dur<strong>in</strong>g 2003-<br />
2007 and ongo<strong>in</strong>g PhD/Lic projects that<br />
started dur<strong>in</strong>g 2003-2007 for your report<strong>in</strong>g<br />
entity.<br />
Infrastructure<br />
Please describe any larger <strong>in</strong>vestments<br />
(>SEK 2 M) <strong>in</strong> <strong>in</strong>frastructure dur<strong>in</strong>g<br />
2003-2007 for your report<strong>in</strong>g entity.<br />
Are the <strong>in</strong>frastructure/equipment requirements<br />
fulfilled for your report<strong>in</strong>g<br />
entity<br />
Please list the type of expensive<br />
(>SEK 2 M) equipment/<strong>in</strong>frastructure<br />
that is needed for your report<strong>in</strong>g entity<br />
Cooperation and outreach activites<br />
Describe ongo<strong>in</strong>g cooperation with other<br />
research groups and/or with <strong>in</strong>dustry,<br />
eg EU-projects. Write “none” if not applicable.<br />
Describe outreach activities related<br />
to research for your report<strong>in</strong>g entity.<br />
Future<br />
What are the future plans (1-5 years) of<br />
your report<strong>in</strong>g entity and most urgent<br />
needs<br />
Background report (project leader)<br />
Personal data<br />
Please provide personal data, contact<br />
and occupational <strong>in</strong>formation.<br />
<strong>Research</strong> area<br />
Choose one of the areas as primary<br />
area. If work<strong>in</strong>g with<strong>in</strong> two or three areas<br />
choose secondary and tertiary areas.<br />
Publications<br />
Publications 2003-2007 applicable to<br />
microelectronics. It is possible to provide<br />
the 15 most important publications,<br />
the total number of articles, citations,<br />
H-<strong>in</strong>dex, etc. for publications<br />
dur<strong>in</strong>g the period 2003-2007. A web address<br />
to a complete list of publications<br />
can also be provided.<br />
Scientific results<br />
Summarize your most significant scientific<br />
achievements and results for the<br />
period 2003-2007,<br />
Max 1 page. Please note that the<br />
broad aspects of the research with<strong>in</strong><br />
the whole report<strong>in</strong>g entity is submitted<br />
by the rapporteur of your report<strong>in</strong>g entity.<br />
Comments on research <strong>in</strong> Sweden<br />
(<strong>Microelectronics</strong>)<br />
Strengths and weaknesses of <strong>Swedish</strong><br />
research <strong>in</strong>, or close to, your own major<br />
area/s.<br />
Other comments (e.g. with reference<br />
to SSF, VR or V<strong>in</strong>nova).<br />
Other <strong>in</strong>formation and technical<br />
feedback<br />
Other <strong>in</strong>formation, e.g. grants greater<br />
than SEK 100 000/year dur<strong>in</strong>g 2003-<br />
2007 from fund<strong>in</strong>g sources other than<br />
VR, SSF and V<strong>in</strong>nova. Project leaders<br />
are asked to contact their respective<br />
rapporteur to make sure that this additional<br />
<strong>in</strong>formation is transferred to the<br />
f<strong>in</strong>ancial support section of the report.<br />
Technical feedback relat<strong>in</strong>g to the<br />
webform or its format, submission, etc.
Appendix<br />
33<br />
Appendix 3. Executive Summaries provided by the Rapporteurs<br />
Silicon and Wide Bandgap<br />
Components<br />
Silicon <strong>Research</strong> at KTH<br />
We report on 17 graduated PhD students<br />
and a total of 28 <strong>in</strong>volved students<br />
over the report<strong>in</strong>g period. A very<br />
large number of peer-reviewed journal<br />
papers and reviewed conference contributions<br />
have been published. A major<br />
silicon nanoelectronics fabrication platform<br />
was established. The silicon technology<br />
has enabled cross-discipl<strong>in</strong>ary<br />
work with the biotechnology area.<br />
Novel silicon nanowire structures<br />
were demonstrated as sensors for detection<br />
of DNA and other biomolecules.<br />
Nanowire structures are especially <strong>in</strong>terest<strong>in</strong>g<br />
due to their enhanced sensitivity.<br />
Studies to advance porous silicon by<br />
RIE have lead to a sp<strong>in</strong>-out company<br />
Sc<strong>in</strong>t-X, develop<strong>in</strong>g highly sensitive X-ray<br />
detectors. Carbon nanotubes were<br />
studied and a novel approach for controllable<br />
site-selective assembly was<br />
established by means of an AC dielectrophoreses<br />
allow<strong>in</strong>g efficient manipulation<br />
of semiconduct<strong>in</strong>g s<strong>in</strong>gle wall CNTs.<br />
The DNA sensor activity has lead to a<br />
patent proposal and is under evaluation<br />
for a commercialization grant. For the<br />
SiC device research projects breakthrough<br />
results were achieved by the<br />
publication of the first bipolar transistor<br />
to demonstrate high breakdown voltage<br />
and hav<strong>in</strong>g a high current ga<strong>in</strong>. The research<br />
enabled a sp<strong>in</strong>-out of a new<br />
company TranSiC, produc<strong>in</strong>g a discrete<br />
SiC bipolar transistor and modules. The<br />
funded research areas have been successful<br />
<strong>in</strong> establish<strong>in</strong>g a lead<strong>in</strong>g experimental<br />
foundation for the future needs<br />
<strong>in</strong> the nanoelectronics area globally<br />
Silicon <strong>Research</strong> at Uppsala University<br />
In a nutshell the backbone of the research<br />
of this entity can be summarized<br />
as synthesis of electronic materials on<br />
the one hand as well as modell<strong>in</strong>g, design,<br />
fabrication and characterization of<br />
discrete electronic components on the<br />
other. The first category <strong>in</strong>cludes:<br />
a) Th<strong>in</strong> piezoelectric films (I.Katardjiev)<br />
b) Synthesis of CIGS and related materials<br />
for solar cells (Marika Edoff)<br />
c) SOI materials (J.Olsson)<br />
d) Gate stack materials (J.Olsson)<br />
e) Ferroelectric materials (I.Katardjiev)<br />
The largest materials research activities<br />
are CIGS and th<strong>in</strong> piezoelectric films.<br />
The CIGS activity, however, despite be<strong>in</strong>g<br />
a world leader <strong>in</strong> CIGS solar cells, is<br />
not <strong>in</strong>cluded <strong>in</strong> this evaluation due to its<br />
ma<strong>in</strong> fund<strong>in</strong>g com<strong>in</strong>g from the Department<br />
of Energy. In this category is also<br />
the world lead<strong>in</strong>g research of S.Berg<br />
who has developed a fundamental description<br />
of sputter PVD processes<br />
which expertise is then applied to all<br />
materials research with<strong>in</strong> the entity.<br />
The second group of activities <strong>in</strong>cludes<br />
a) High power, high frequency LDMOS<br />
transistors (J.Olsson)<br />
b) Solar cell modules (M.Edoff)<br />
c) Microwave electro-acoustic components<br />
such as resonators, filters,<br />
oscillators, etc (I.Katardjiev)<br />
d) Physical and biochemical electroacoustic<br />
sensors (I.Katardjiev)<br />
e) Components on hybrid Si/SiC substrates<br />
(J.Olsson)<br />
f) Integrated antennas (A.Rydberg)<br />
In all of the activities above the project<br />
leaders hold lead<strong>in</strong>g positions <strong>in</strong> their<br />
respective areas <strong>in</strong> the world.<br />
Silicon Carbide <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g<br />
University<br />
We are focused on growth and characterization<br />
of wide bandgap semiconductors,<br />
primarily SiC, GaN, AlGaN and AlN.<br />
We develop new growth techniques, like<br />
chloride-based SiC growth and hot-wall<br />
MOCVD growth of III-nitrides, often <strong>in</strong><br />
collaboration with <strong>in</strong>dustry. We characterize<br />
our grown wafer as feedback to<br />
the growth but also as a help to understand<br />
device property variations for devices<br />
from the same wafer. We also do<br />
fundamental defect physics, which has<br />
been very helpful <strong>in</strong> understand<strong>in</strong>g the<br />
properties of semi-<strong>in</strong>sulat<strong>in</strong>g SiC substrates.<br />
The driv<strong>in</strong>g forces for our materials<br />
research have been high-voltage,<br />
SiC power devices (thick low-doped epitaxial<br />
layers with excellent morphology,<br />
fast epitaxial growth, long carrier lifetime,<br />
bipolar degradation) and high-power,<br />
high-frequency devices (AlGaN/GaN<br />
HEMT structures, large-area uniformity,<br />
transport properties of the 2DEG, semi<strong>in</strong>sulat<strong>in</strong>g<br />
buffer layer, semi-<strong>in</strong>sulat<strong>in</strong>g<br />
SiC substrates, <strong>in</strong>tr<strong>in</strong>sic defects).<br />
Dur<strong>in</strong>g the next 5 years we plan to<br />
re-enter <strong>in</strong>to the SiC bulk growth field,<br />
this time us<strong>in</strong>g chlor<strong>in</strong>ated precursors<br />
<strong>in</strong> a HTCVD process and extend our IIInitride<br />
activities <strong>in</strong>to the high-power,<br />
deep-UV emission area but still keep<br />
our <strong>in</strong>terest for high-voltage and highfrequency<br />
devices. As before we will
34 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
only do the materials research and collaborate<br />
with groups at Chalmers for<br />
design, process<strong>in</strong>g and evaluation of<br />
high-frequency and deep-UV emission<br />
devices and with Acreo for high-voltage,<br />
power devices.<br />
Gallium Nitride <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g<br />
University<br />
The research <strong>in</strong> this environment (the<br />
Materials Science Division at IFM) is focused<br />
on experimental development of<br />
growth techniques for wide bandgap<br />
semiconductors and experimental studies<br />
of material properties related to<br />
electronic and optical applications. We<br />
are well equipped with about 50 laboratories<br />
for structural, optical, electrical,<br />
magnetic studies etc, mostly <strong>in</strong> clean<br />
room environment. The research is performed<br />
<strong>in</strong> a well developed <strong>in</strong>ternational<br />
collaboration for all projects. The<br />
projects discussed here concern four<br />
categories of materials: III-nitrides,<br />
magnetic semiconductor structures, SiC<br />
and III-V-nitrides, all <strong>in</strong>ternationally attractive<br />
areas presently.<br />
The growth work <strong>in</strong>cluded here concerns<br />
development of bulk GaN boules<br />
and wafers based on HVPE technology.<br />
We have succeeded <strong>in</strong> grow<strong>in</strong>g several<br />
mm thick boules of GaN with a dislocation<br />
density < 10 6 cm –2 . Additional studies<br />
of material properties <strong>in</strong>clude bulk<br />
GaN, InGaN- and AlGaN-related QWs<br />
and superlattices, nonpolar epilayers,<br />
InN and AlInN. The magnetic structures<br />
studied <strong>in</strong>clude InGaN/GaMnN,<br />
ZnMgSe/ZnCdSe, and ZnO related<br />
structures. Mechanisms for sp<strong>in</strong> <strong>in</strong>jection,<br />
sp<strong>in</strong> transfer and sp<strong>in</strong> detection <strong>in</strong><br />
these structures have been elucidated.<br />
Intr<strong>in</strong>sic defects <strong>in</strong> SiC have been identified.<br />
Their role for the electronic properties<br />
have been clarified. The III-V-N<br />
materials <strong>in</strong>clude GaInNP and GaInNAs<br />
with related QW structures. Band structure,<br />
defects, and H passivation have<br />
been studied <strong>in</strong> detail.<br />
Silicon <strong>Research</strong> at Chalmers<br />
The research activities at Chalmers, reported<br />
here, arise from two different research<br />
laboratories at the Department<br />
of Microtechnology and NanoScience<br />
(MC2). Enoksson, Lundgren and Bengtsson<br />
(also Vice Rector of Chalmers) belong<br />
to the BioNanoSystems Laboratory,<br />
while Engström is part of the<br />
Laboratory of Physical Electronics.<br />
Spann<strong>in</strong>g across an area <strong>in</strong>clud<strong>in</strong>g thermal<br />
wafer bond<strong>in</strong>g, nanogaps for molecular<br />
attachment, carbon nanotubes<br />
for <strong>in</strong>tegration <strong>in</strong>to CMOS technology<br />
and for AFM/TEM applications, MEMS<br />
based sensors, biodetectors, quantum<br />
dots, silicon nanowires and high-k-dielectrics,<br />
it seems reasonable that this<br />
collected knowledge should be more alloyed<br />
than it is presently. As can be<br />
seen below, the activities by Bengtsson,<br />
Lundgren and Enoksson have<br />
l<strong>in</strong>ks, while Engström’s research has<br />
been separate from those efforts as he<br />
restarted this k<strong>in</strong>d of activities <strong>in</strong> 2003<br />
after a 7 years period of managerial<br />
work at Chalmers. Discussions are ongo<strong>in</strong>g<br />
to f<strong>in</strong>d ways of a closer collaboration<br />
between silicon related works go<strong>in</strong>g<br />
on at MC2. (See also reports from Johan<br />
Liu and Göran Wend<strong>in</strong>.) At the hear<strong>in</strong>g<br />
<strong>in</strong> April, results from these measures<br />
will be available.<br />
High Speed Electronics<br />
Microwaves <strong>Research</strong> at Chalmers<br />
Our research is focused on electronic<br />
components and circuits for applications<br />
from low GHz to THz frequencies utiliz<strong>in</strong>g<br />
semiconductor technologies. We are<br />
founded to approximately 80 % by external<br />
research agencies such as SSF, V<strong>in</strong>nova,<br />
VR, FMV, SNSB, FOI, ESTEC, EU<br />
etc and, <strong>in</strong> addition, <strong>in</strong>dustry. We are<br />
runn<strong>in</strong>g two centres of excellence, namely<br />
the V<strong>in</strong>nova ”GHz-Centre”, and the<br />
SSF Strategic <strong>Research</strong> Centre <strong>in</strong> High<br />
Speed Electronics and Photonics. Our<br />
experimental facilities <strong>in</strong>clude a very well<br />
equipped clean room facility, and several<br />
microwave and millimeterwave measurement<br />
labs. Many of our research<br />
projects are f<strong>in</strong>anced and performed together<br />
with the <strong>in</strong>dustry.<br />
Our research <strong>in</strong>clude <strong>in</strong> most cases<br />
device simulation, fabrication, characterization,<br />
modell<strong>in</strong>g, and circuit design.<br />
Our <strong>in</strong> house processes <strong>in</strong>clude Indium<br />
Phosphide based High Electron Mobility<br />
Transistors (HEMTs) for low noise and<br />
low power applications at frequencies<br />
from less then 1 GHz to several hundreds<br />
of GHz. For high power applications,<br />
we are <strong>in</strong>vestigat<strong>in</strong>g wide-bandgap<br />
(WBG) semiconductors such as<br />
Silicon Carbide (SiC) and Gallium Nitride<br />
(GaN). At the moment SiC MESFETs,<br />
SiC-MOSFETs, SiC diodes, and AlGan-<br />
GaN HEMTs are fabricated <strong>in</strong> our clean<br />
room. We are also develop<strong>in</strong>g MMICs<br />
(Microwave Monolithic Integrated Circuits)<br />
based on these device and external<br />
foundry processes. The process <strong>in</strong>clude<br />
airbridge, via-hole,<br />
overlay-capacitor, spiral <strong>in</strong>ductance,<br />
th<strong>in</strong>-film resistor and semiconductor resistor.<br />
Terahertz Systems <strong>Research</strong><br />
at Chalmers<br />
Our research at the Physical Electronics<br />
Laboratory is focused on new materials,<br />
devices and sub-systems for applications<br />
<strong>in</strong> the frequency range 10 GHz –<br />
10 THz or the correspond<strong>in</strong>g wavelength<br />
range 30 µm – 3 cm. This is an emerg<strong>in</strong>g<br />
part of the electromagnetic spectrum<br />
where optical and microwave techniques<br />
meet.
Appendix<br />
35<br />
We fabricate novel devices <strong>in</strong> our<br />
state-of-the-art Nanofabrication facility<br />
and evaluate these <strong>in</strong> various circuit<br />
demonstrators. We carry out research<br />
on new materials for active and passive<br />
circuits. Our research f<strong>in</strong>ds applications<br />
<strong>in</strong> receivers and transmitters for future<br />
radar sensors, THz-imag<strong>in</strong>g systems,<br />
radio astronomy and remote sens<strong>in</strong>g,<br />
and future wireless communication systems.<br />
We take advantage of advanced CAE<br />
tools and a top-class microwave and terahertz<br />
characterisation facility.<br />
Nanoelectronics<br />
Nanotubes <strong>Research</strong> at Chalmers<br />
The carbon nanotube research <strong>in</strong> Sweden<br />
is very much concentrated <strong>in</strong><br />
Gothenburg where there are a number<br />
of experimental and theoretical activities.<br />
The carbon nanotube related research<br />
<strong>in</strong> Gothenburg with<strong>in</strong> the area of<br />
microelectronics has focused on the<br />
study of nanoelectromechanical devices.<br />
This has ranged from very fundamental<br />
theoretical studies of quantum<br />
mechanical effects <strong>in</strong> suspended nanotubes<br />
to fundamental studies of transport<br />
(both electronic and mass) <strong>in</strong><br />
<strong>in</strong>dividual nanotubes and more applications-oriented<br />
studies of nanotubebased<br />
NEMS on chip. The theoretical<br />
and experimental work is carried out <strong>in</strong><br />
close collaboration and provides a fruitful<br />
cross-fertilisation of ideas. The study<br />
of <strong>in</strong>dividual nanotubes is essential to<br />
develop a clear understand<strong>in</strong>g of the<br />
properties and potential of nanotubebased<br />
devices. Much of the research<br />
activity has concentrated on develop<strong>in</strong>g<br />
ways to grow and manipulate nantotubes<br />
to allow the controlled fabrication<br />
of devices on-chip. The further development<br />
of tools to manipulate and analyse<br />
<strong>in</strong>dividual nanotubes has also been<br />
a major activity. The comb<strong>in</strong>ation of<br />
scann<strong>in</strong>g probe microscopy and TEM<br />
provides an ideal tool for manipulat<strong>in</strong>g<br />
and study<strong>in</strong>g mechanical and electrical<br />
properties of <strong>in</strong>dividual nanotubes<br />
Quantum Electronics <strong>Research</strong> at<br />
Chalmers<br />
The microelectronics research reported<br />
here addresses nano- and quantum-devices<br />
and can be divided <strong>in</strong>to 5 subareas:<br />
• S<strong>in</strong>gle electron devices and qubits<br />
(Dels<strong>in</strong>g et al)<br />
• Molecular electronics (Kubatk<strong>in</strong> et<br />
al)<br />
• High Tc devices (Lombardi/Claeson<br />
et al)<br />
• THz-Bolometers (Kuzm<strong>in</strong> et al)<br />
• Theory (Wend<strong>in</strong> et al)<br />
We study fundamental questions about<br />
how nanodevices can be described, fabricated,<br />
and utilized. In many cases we<br />
operate at low temperatures and with<br />
superconduct<strong>in</strong>g devices. Applied<br />
projects relate to very sensitive measurement<br />
methods and sensors.<br />
A very important <strong>in</strong>frastructure for our<br />
research is the well equipped nano fabrication<br />
laboratory at MC2. This gives<br />
us a clear advantage compared to other<br />
groups.<br />
We have for many years been well<br />
supported by SSF, but we can see that<br />
the support from SSF is decreas<strong>in</strong>g.<br />
Fortunately, with a new L<strong>in</strong>né grant from<br />
VR, we have been able to cont<strong>in</strong>ue at<br />
approximately the same level.<br />
Dur<strong>in</strong>g the report<strong>in</strong>g period our environment<br />
has produced 120 scientific<br />
papers of which 2 <strong>in</strong> Nature, 1 <strong>in</strong> Science,<br />
10 <strong>in</strong> PRL, 2 <strong>in</strong> NanoLetters and<br />
1 <strong>in</strong> Nature Physics.<br />
It is important to note that substantial<br />
parts of the NANODEV centre are<br />
reported elsewhere.<br />
The activities of Shekhter, Gorelik,<br />
and Jonson are reported by Campbell<br />
The activities of Bengtsson, Enoksson<br />
and Engström are reported by Engström<br />
The activities of Haviland are reported<br />
by himself<br />
Nanostructure Physics <strong>Research</strong><br />
at KTH<br />
Nanostructure physics at KTH is a<br />
group consist<strong>in</strong>g of two professors, one<br />
technician (50 %) and typically 1-2 postdocs,<br />
5-7 Graduate students, and about<br />
the same number of undergraduate<br />
project workers annually. We work on a<br />
broad spectrum of research, from applied<br />
microelectronics with commercial<br />
companies, to more fundamental, long<br />
term projects at the boarder between<br />
physics, biology and microelectronics.<br />
We have built up first class fabrication<br />
and measurement facilities, whose<br />
functionality has been well proven by<br />
the large number of students from other<br />
groups who rely on our open laboratory<br />
facilities. Our own research with Sp<strong>in</strong>tronics<br />
and with micro resonators has<br />
generated IP which we are presently develop<strong>in</strong>g.<br />
We have made many important<br />
scientific contributions to our fields<br />
of research. Highlights for the period<br />
2003-2007 are:<br />
• 11 letter publications <strong>in</strong> “high impact”<br />
journals, e.g. PRL, APL, Nanoletters,<br />
JACS.<br />
• 23 longer publications <strong>in</strong> refereed<br />
scientific Journals.<br />
• 15 <strong>in</strong>vited talks at <strong>in</strong>ternational conferences<br />
and workshops.<br />
• 35+ <strong>in</strong>vited sem<strong>in</strong>ars or department<br />
colloquium and visits.<br />
• 6 PhD students graduated, 5 work<strong>in</strong>g<br />
<strong>in</strong> <strong>Swedish</strong> High Tech <strong>in</strong>dustry.<br />
• 3 patents
36 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
Nanometer Structures <strong>Research</strong><br />
at Lund University<br />
We have <strong>in</strong> the last five years been able<br />
to position ourselves as one of the<br />
lead<strong>in</strong>g laboratories <strong>in</strong> the fields of<br />
semiconductor growth (epitaxy), <strong>in</strong> advanced<br />
materials characterization, <strong>in</strong><br />
basic device physics, and have applied<br />
this to the development of completely<br />
novel device and circuit concepts, <strong>in</strong><br />
electronics as well as <strong>in</strong> opto-electronics.<br />
This is illustrated by our strong<br />
presence <strong>in</strong> lead<strong>in</strong>g <strong>in</strong>ternational conferences<br />
(> 150 <strong>in</strong>vited/plenary talks) and<br />
<strong>in</strong> us lead<strong>in</strong>g the primary EU-project <strong>in</strong><br />
the field of “Emerg<strong>in</strong>g Nanoelectronics”.<br />
A strong focus has been on semiconductor<br />
nanowires from the po<strong>in</strong>t of view<br />
of understand<strong>in</strong>g growth mechanisms<br />
and how this understand<strong>in</strong>g enables superior<br />
device fabrication. Of special importance<br />
has been our break-through <strong>in</strong><br />
controll<strong>in</strong>g the formation of highly perfect<br />
and atomically abrupt hetero-structures<br />
with<strong>in</strong> III-V nanowires, by which<br />
many k<strong>in</strong>ds of quantum- and nanobased<br />
devices have been demonstrated<br />
with<strong>in</strong> our entity, such as s<strong>in</strong>gle-electron<br />
devices and memories, resonant<br />
tunnell<strong>in</strong>g devices, wrap-gated field-effect<br />
transistors, quantum-dot emitters<br />
and light-emitt<strong>in</strong>g nanowire structures<br />
for LEDs <strong>in</strong> general. We have also made<br />
significant progress <strong>in</strong> the fields of<br />
nano-mechanics and nano-fluidics, <strong>in</strong><br />
both case primarily of relevance for bioapplications.<br />
Organic Electronics<br />
Organic Electronics <strong>Research</strong> at<br />
L<strong>in</strong>köp<strong>in</strong>g University<br />
We have developed organic nanoelectronics<br />
through the use of microfluidic<br />
methods for assembly of micro-nanostructures,<br />
and by us<strong>in</strong>g misfolded prote<strong>in</strong><br />
fibres <strong>in</strong> the form of amyloid, as a<br />
template for assembly of semiconduct<strong>in</strong>g,<br />
lum<strong>in</strong>escent or metallic polymers.<br />
Device functions have been demonstrated<br />
with these materials, also with<br />
enhancement of performance, <strong>in</strong> light<br />
emitt<strong>in</strong>g diodes with <strong>in</strong>cluded amyloid.<br />
The use of photochromic molecules <strong>in</strong><br />
semiconduct<strong>in</strong>g polymer blends allow<br />
light manipulation of charge transport<br />
through diodes. Detailed studies of a<br />
class of devices, diodes exhibit<strong>in</strong>g electrical<br />
memory functions, has demonstrated<br />
the reversible formation and destruction<br />
of metallic shorts through<br />
such devices, cast<strong>in</strong>g doubt on exist<strong>in</strong>g<br />
models of electrical memory devices.<br />
We have enhanced the functions of<br />
polymer solar cells by enhanc<strong>in</strong>g light<br />
<strong>in</strong>coupl<strong>in</strong>g. The three methods to enhance<br />
light absorption, through nanostructured<br />
electrodes giv<strong>in</strong>g photon-plasmon<br />
coupl<strong>in</strong>g, through microlenses<br />
focus<strong>in</strong>g and trapp<strong>in</strong>g light, and through<br />
folded reflective and tandem solar cells<br />
on the milliscale, are all operational,<br />
but the folded cells give the highest <strong>in</strong>crease<br />
of efficiency, by 1.8 times. With<br />
our best materials, we reach s<strong>in</strong>gle cell<br />
efficiencies of 4 %, which may enable<br />
us to fold tandem cells to arrive at 7 %<br />
efficiency (not yet demonstrated).<br />
Paper Electronics <strong>Research</strong> at<br />
L<strong>in</strong>köp<strong>in</strong>g University<br />
The activities <strong>in</strong> the Organic Electronics<br />
group, at LiU, and at Acreo, <strong>in</strong> Norrköp<strong>in</strong>g,<br />
are conducted <strong>in</strong> the spirit of<br />
develop<strong>in</strong>g organic electronic devises<br />
<strong>in</strong>clud<strong>in</strong>g electrons, molecules and liquids<br />
as the signal carriers for novel applications<br />
target<strong>in</strong>g pr<strong>in</strong>ted electronics<br />
and bioelectronics.<br />
Pr<strong>in</strong>ted electronics: Our vision is to<br />
convert manufactur<strong>in</strong>g of electronics<br />
from a batch-based process technology<br />
to a reel-to-reel manufactur<strong>in</strong>g technology,<br />
similar to how we pr<strong>in</strong>t on paper today.<br />
To achieve this we need to explore<br />
electronic materials that can be processed<br />
from solutions and our choice is<br />
organic electronic materials. On the application<br />
side, we are explor<strong>in</strong>g us<strong>in</strong>g<br />
pr<strong>in</strong>ted electronics primarily on paper<br />
products, specifically on packages, media<br />
surfaces and labels.<br />
Bioelectronics: Our vision is to<br />
bridge the gap <strong>in</strong> between manmade<br />
electronics and biology us<strong>in</strong>g organic<br />
electronic devices that can perform signal<br />
process<strong>in</strong>g of bio-molecules as well<br />
as electrons. In this context, we presently<br />
develop biochemical circuits that<br />
can translate electronic signals <strong>in</strong>to biological<br />
equivalences <strong>in</strong> order to regulate<br />
and record signall<strong>in</strong>g <strong>in</strong> biology. We particularly<br />
focus on the area of electronic<br />
control of <strong>in</strong>tracellular signall<strong>in</strong>g, stem<br />
cell differentiation and neuronal signall<strong>in</strong>g.<br />
Photonics<br />
Photonic Communication <strong>Research</strong><br />
at Chalmers<br />
Our research <strong>in</strong> fibre optics addresses<br />
three ma<strong>in</strong> areas: High-capacity and<br />
high spectral efficiency digital communications,<br />
all-optical functionalities, and<br />
microwave photonics. In the report<strong>in</strong>g<br />
period we have presented about 25 <strong>in</strong>vited<br />
papers at lead<strong>in</strong>g events,<br />
launched one sp<strong>in</strong>-off company, and<br />
produced 6 PhDs. We have recovered<br />
from the telecom bubble and see significant<br />
new opportunities of growth from<br />
synergies with other groups at Chalmers,<br />
with<strong>in</strong> EU project, as well as outside<br />
Europe. We foresee research on<br />
co-optimization of optics, electronics,<br />
and algorithms as a new paradigm shift<br />
for next generation optical network<strong>in</strong>g.<br />
On a more fundamental level, as an ex-
Appendix<br />
37<br />
ample, we envision very <strong>in</strong>trigu<strong>in</strong>g performance<br />
and applications of phasesensitive<br />
optical parametric amplifier<br />
(for example the potential for 0 dB<br />
noise figure). Our test and measurement<br />
laboratory has been upgraded<br />
substantially with specific grants<br />
amount<strong>in</strong>g to SEK 6.5 M, such that it<br />
now has the highest <strong>in</strong>ternational standard.<br />
This has <strong>in</strong>directly contributed to<br />
our success <strong>in</strong> the recent Photonics EU-<br />
FP7 call where we ranked 1 (!) out of<br />
the 134 STREP submissions as well as<br />
facilitat<strong>in</strong>g us to become an attractive<br />
partner also outside Europe. An example<br />
is our recently established significant<br />
jo<strong>in</strong>t research activity with UC San<br />
Diego, USA, and we expect to strengthen<br />
this.<br />
Photonic Components <strong>Research</strong> at<br />
L<strong>in</strong>köp<strong>in</strong>g University<br />
The goals with this program was to<br />
make device quality ZnO materials,<br />
ma<strong>in</strong>ly nanorods, for optical applications,<br />
LEDs and lasers, grown on silicon<br />
substrates. This besides the growth on<br />
other s<strong>in</strong>gle crystal substrates likes<br />
sapphire, SiC. In addition, amorphous<br />
substrates e.g. SiO 2<br />
, glass etc are all of<br />
<strong>in</strong>terests, add<strong>in</strong>g to that the immense<br />
<strong>in</strong>terest of flexible substrates, e.g. plastic<br />
electronics. The second task is to<br />
characterize all the grown nano-rods to<br />
<strong>in</strong>sure the suitability of these nanorods<br />
for optical application. In addition demonstration<br />
of new photonic devices<br />
based on ZnO nanorods was the f<strong>in</strong>al<br />
stage of the experimental planned work.<br />
As a sp<strong>in</strong> off effect it is also expected<br />
to come out some new physics which<br />
can be used for applications. Z<strong>in</strong>c oxide<br />
was chosen due to its unique properties<br />
as extremely high exciton b<strong>in</strong>d<strong>in</strong>g<br />
energy, strong photon exciton coupl<strong>in</strong>g,<br />
and possibility to grow crystall<strong>in</strong>e ZnO<br />
on different lattice mismatched or<br />
amorphous substrates by catalytic<br />
growth.<br />
All the above goals have been<br />
achieved as demonstrated through publications<br />
and/or patents.<br />
Quantum Optics <strong>Research</strong> at KTH<br />
The report<strong>in</strong>g entity consists of two senior<br />
researchers, Profs. Gunnar Björk<br />
(rapporteur) and Anders Karlsson.<br />
The field of research is quantum <strong>in</strong>formation<br />
(<strong>in</strong> particular quantum key<br />
distribution) and quantum optics (<strong>in</strong> particular<br />
applications of entanglement<br />
and its characterization). Notable results<br />
is the early demonstration of a full<br />
plug-and-play quantum cryptography<br />
system transmitt<strong>in</strong>g over 60 km of optical<br />
fibre at the standard telecom wavelength<br />
of 1.55 micrometer, the demonstration<br />
of non-locality of a s<strong>in</strong>gle<br />
photon, the development of periodically<br />
poled non-l<strong>in</strong>ear crystals (KTP) for the<br />
efficient generation of photon-pairs, and<br />
methods for a simple estimation of bipartite<br />
entanglement us<strong>in</strong>g only local<br />
measurements. The research has been<br />
both of theoretical and of experimental<br />
nature.<br />
The total research grants awarded<br />
dur<strong>in</strong>g the period is roughly SEK 32 M<br />
(SEK 18 M SSF, SEK 7.1 M VR, SEK 6.4<br />
M EU, SEK 0.8 M STINT).<br />
Dur<strong>in</strong>g the period four PhD theses<br />
have been awarded <strong>in</strong> the area, a fifth<br />
is almost completed, and a sixth is<br />
about half-way.<br />
The research has resulted <strong>in</strong> 39 papers<br />
<strong>in</strong> peer reviewed <strong>in</strong>ternational journals<br />
and 19 <strong>in</strong>vited talks at <strong>in</strong>ternational<br />
conferences.<br />
Photonic Devices <strong>Research</strong> at<br />
Chalmers<br />
Optoelectronics:<br />
Major achievements <strong>in</strong> GaAs-based VC-<br />
SELs at 850 and 1300 nm, <strong>in</strong>clud<strong>in</strong>g:<br />
1) a comprehensive model for VCSEL<br />
design and analysis, 2) a superior technique<br />
for mode and polarization control,<br />
result<strong>in</strong>g <strong>in</strong> record high s<strong>in</strong>gle mode<br />
power, 3) high speed VCSELs for optical<br />
communication l<strong>in</strong>ks.<br />
Optically pumped long wavelength<br />
(1550 nm) semiconductor disk lasers<br />
were developed us<strong>in</strong>g the InP material<br />
system. Record high output power, comb<strong>in</strong>ed<br />
with excellent beam quality was<br />
obta<strong>in</strong>ed. Short, high power pulses<br />
were generated at high repetition rates<br />
us<strong>in</strong>g mode-lock<strong>in</strong>g.<br />
Dilute nitride lasers on GaAs were<br />
developed for high speed, high temperature<br />
operation. GaInNAs lasers emitt<strong>in</strong>g<br />
at 1.3 µm exhibited record low threshold<br />
currents with very small temperature<br />
dependence and record modulation<br />
bandwidths. Operation at high bit rates<br />
at elevated temperatures was demonstrated.<br />
Metamorphic long wavelength In-<br />
GaAs lasers on GaAs were demonstrated,<br />
<strong>in</strong>clud<strong>in</strong>g record performance at 1.3<br />
µm and the first 1.55 µm laser.<br />
Optics:<br />
New types of photonic analog-to-digital<br />
converters (ADCs) were successfully<br />
demonstrated, <strong>in</strong>clud<strong>in</strong>g a spectrometer<br />
based ADC, an <strong>in</strong>terferometer based<br />
ADC, and a photonic time-stretcher.<br />
Liquid crystals:<br />
Lead<strong>in</strong>g work on ferro- and antiferroelectric<br />
liquid crystals (LCs) with major<br />
achievements <strong>in</strong> fundamental physics<br />
(e.g. surface <strong>in</strong>teractions) and device<br />
physics (e.g. multi-level phase and amplitude<br />
modulation and ultra-sensitive<br />
detection).<br />
Photonic and Microwave Eng<strong>in</strong>eer<strong>in</strong>g<br />
<strong>Research</strong> at KTH<br />
The entity research comprises a
38 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
number of fields, some of which at the<br />
<strong>in</strong>ternational forefront. The research<br />
has largely been renewed, <strong>in</strong> response<br />
to emerg<strong>in</strong>g novel fields and visions of<br />
project leaders, and is well <strong>in</strong> tune with<br />
<strong>in</strong>ternational ma<strong>in</strong>stream, evidenced by<br />
the many <strong>in</strong>vited papers and talks. This<br />
advantageous situation is, especially<br />
for semiconductor material and device<br />
technology, a result of visionary fund<strong>in</strong>g<br />
start<strong>in</strong>g <strong>in</strong> the mid 70s. This legacy is <strong>in</strong><br />
danger of be<strong>in</strong>g squandered. Photonics<br />
is a prioritized area <strong>in</strong> EU (evidenced by<br />
Photonics21) and research with<strong>in</strong> the<br />
entity covers a number of the areas <strong>in</strong><br />
the Photonics21 strategy document: Integrated<br />
photonics, where we have a<br />
long track record. This field <strong>in</strong>cludes<br />
photonic crystals, where state of the art<br />
experimental and theory work has been<br />
accomplished as well as state of the art<br />
Si <strong>in</strong>tegrated photonics technology and<br />
the new projects on plasmonics. L<strong>in</strong>ked<br />
to these are projects on material technology<br />
such as heteroepitaxi of InP on<br />
Si and state of the art hydride VPE.<br />
Here are also the rather recent metamaterial<br />
research and functional materials<br />
with tailored l<strong>in</strong>ear and nonl<strong>in</strong>ear<br />
properties for photonics l<strong>in</strong>k<strong>in</strong>g several<br />
projects. VCSEL 1.3 µm technology and<br />
high speed electroabsorbtion modulators<br />
are other areas <strong>in</strong> the <strong>in</strong>ternational<br />
forefront. Basic research on dynamics<br />
and coherence properties <strong>in</strong> low dimensional<br />
semiconductors (relevant <strong>in</strong> its<br />
own right) can give new functionality to<br />
<strong>in</strong>tegrated photonics.<br />
Photonic Materials <strong>Research</strong> at<br />
Chalmers<br />
The research unit consists of a group<br />
that moved from the department of<br />
physic to MC2 a few years ago.<br />
The group has two commercial MBEsystems<br />
for III-V growth and characterisation<br />
of layers. This characterisation<br />
equipment is Hall effect, PL (not work<strong>in</strong>g)<br />
and equipment for CV- and IV-measurements.<br />
We also has access to the<br />
characterisation <strong>in</strong> the MC2 clean room<br />
(XRD and AFM).<br />
The second part is research on molecule<br />
layers grown by thermal evaporation.<br />
This started about 5 years ago. We<br />
use a low vacuum evaporation system<br />
were know-how from the MBE-technology<br />
has been used. One of the MBE-chambers<br />
has an organic UHV-chamber connected<br />
but we have no money to run it<br />
The group has consisted of typically<br />
ten persons. The group size has slowly<br />
decreased (with reduction of f<strong>in</strong>ancial resources)<br />
and is presently only three persons<br />
(plus 2-4 master students).<br />
System Design<br />
System Design <strong>Research</strong> at KTH<br />
The report<strong>in</strong>g entity conducts cutt<strong>in</strong>g<br />
edge research <strong>in</strong> micro-/nano-electronic<br />
systems spann<strong>in</strong>g a wide range of topics<br />
carefully chosen to contribute to areas<br />
of strategic <strong>in</strong>terest to <strong>Swedish</strong> <strong>in</strong>dustry<br />
and to achieve the mission of<br />
KTH as a lead<strong>in</strong>g world class research<br />
<strong>in</strong>stitute. Over the report<strong>in</strong>g period of<br />
<strong>in</strong>terest, the entity cont<strong>in</strong>ued the tradition<br />
of be<strong>in</strong>g a world leader and one of<br />
the first groups <strong>in</strong> Europe, <strong>in</strong>deed the<br />
world, to <strong>in</strong>itiate and lead research <strong>in</strong><br />
the area of:<br />
1) Low power CMOS radio and mixed<br />
signal design for convergent wireless<br />
handhelds<br />
2) Low power digital design, chip communication<br />
and <strong>in</strong>terconnect design<br />
techniques for system- and networkon-chip<br />
3) EDA tools development for design<br />
space exploration and optimization<br />
of RF and mixed signal circuits and<br />
systems<br />
4) System-<strong>in</strong>-package and <strong>in</strong>tegrated<br />
technologies for <strong>in</strong>telligent paper<br />
and for wearable medical devices<br />
The work strikes a good balance theory<br />
and practice. One application is development<br />
of low power small form factor<br />
chipsets for high volume low cost cognitive<br />
radios (SDRs) and wireless systems<br />
(cellular,WLAN/WiMAX, RFID, etc.), from<br />
end-to-end, i.e. RF, digital baseband/<br />
MAC as well as the front end passives.<br />
The methodologies are applied to wirel<strong>in</strong>e<br />
communications, multimedia, <strong>in</strong>telligent<br />
paper technology and medical applications.<br />
The work contributes to<br />
robust nano-scale <strong>in</strong>tegration, digitally<br />
programmable/configurable RF and<br />
mixed signal IPs and statistical design<br />
for yield enhancement.<br />
System Design <strong>Research</strong> at Lund<br />
University<br />
CCCD is dedicated to circuit and system-on-chip<br />
design for future wireless<br />
communications. When technology is<br />
scaled down, low supply voltage poses<br />
a greatly challenge to receiver dynamic<br />
range, l<strong>in</strong>earity and transmitter output<br />
power. For ADC and DAC, sampl<strong>in</strong>g<br />
accuracy, dynamic range, speed, resolution<br />
and glitch are gett<strong>in</strong>g more troublesome.<br />
In digital doma<strong>in</strong>, high process<strong>in</strong>g<br />
speed and capability, low leakage,<br />
high efficiency, low cost and low switch<strong>in</strong>g<br />
noise are most wanted. In addition,<br />
high flexibility and low digital-to-analog<br />
<strong>in</strong>terference are also extremely important.<br />
The projects of CCCD research program<br />
are therefore ma<strong>in</strong>ly focused on<br />
the above topics (not limited to), such<br />
as: P1-Monolithic Transceivers (l<strong>in</strong>earization,<br />
low voltage, low cost, adaptive<br />
and multiple antenna, beam form<strong>in</strong>g<br />
etc.); P2-Mixed Signal Circuit Design<br />
(high speed and wide dynamic range
Appendix<br />
39<br />
ADC, low glitch and low image <strong>in</strong>terpolation<br />
DAC, silent CMOS circuits etc); P3-<br />
Digital Build<strong>in</strong>g Blocks for Wireless Systems<br />
(distributed asynchronous custom<br />
DSP-systems, algorithm/HW co-design,<br />
algorithms for adaptive antenna etc.);<br />
P6-Flexible Term<strong>in</strong>al for Wireless Systems<br />
(reconfigurable RF front-end and<br />
ADC, flexible cod<strong>in</strong>g/decod<strong>in</strong>g and<br />
baseband circuitry, hardware for MIMO<br />
etc.). Besides, P4-Digital Holographic<br />
Imag<strong>in</strong>g, P5-Medical Implantable Devices,<br />
P7-Hardware control of HCCI<br />
Combustion Eng<strong>in</strong>es and P8-Architectures<br />
for Video and Image based Systems<br />
are dedicated to respective areas<br />
of CCCD partners.<br />
System Design <strong>Research</strong> at Chalmers<br />
At the architecture level, a major<br />
achievement has been the establishment<br />
of the new architectural framework<br />
known as FlexSoC. Other important<br />
achievements are novel<br />
applications of compression techniques<br />
to reduce the <strong>in</strong>terconnect bandwidth<br />
and the amount of memory resources <strong>in</strong><br />
computer systems. The group has also<br />
contributed with new design space exploration<br />
techniques to assess energy<br />
efficiency <strong>in</strong> complex systems with cooperat<strong>in</strong>g<br />
hardware and software.<br />
At the circuit level, important results<br />
<strong>in</strong>clude new low-power techniques for<br />
sleep-mode circuits, scalable multipliers<br />
with logarithmic depth with regular<br />
layouts, tw<strong>in</strong>-precision datapath units,<br />
and flexible datapath <strong>in</strong>terconnects.<br />
Contributions have also been made to<br />
macro modell<strong>in</strong>g of power dissipation.<br />
To this end, the group has contributed<br />
with macro modell<strong>in</strong>g methods for memory<br />
and datapath blocks to more accurately<br />
estimate the power be<strong>in</strong>g dissipated.<br />
F<strong>in</strong>ally, <strong>in</strong> the field of substrate<br />
noise, we have extended a lot of the<br />
theories that were previously developed<br />
for spread<strong>in</strong>g resistance analysis and to<br />
make it useful for analys<strong>in</strong>g how contacts<br />
on the surface of a silicon chip <strong>in</strong>terfere<br />
with each other. Accurate compact<br />
substrate models which can<br />
predict the noise coupl<strong>in</strong>g of <strong>in</strong>tegrated<br />
circuits are presented. A physics-based<br />
modell<strong>in</strong>g approach has been employed<br />
to yield scalable and predictive three<br />
dimensional models.<br />
System Design <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g<br />
University<br />
This report<strong>in</strong>g entity <strong>in</strong>cludes Microelectronic<br />
Devices and Circuit research at<br />
the departments of Electrical Eng<strong>in</strong>eer<strong>in</strong>g,<br />
Computer and Information Science,<br />
and Physics, Chemistry and Biology at<br />
L<strong>in</strong>köp<strong>in</strong>g University.<br />
Most of these activities are organized<br />
<strong>in</strong> Str<strong>in</strong>gent <strong>Research</strong> Centre, with<br />
9 professors and 5 associate professors.<br />
Dur<strong>in</strong>g 2003-2007 we estimate<br />
that we contributed about 0.5 % of<br />
world research <strong>in</strong> our field, and we exam<strong>in</strong>ed<br />
31 PhD’s, of which 77 % now<br />
work <strong>in</strong> <strong>in</strong>dustry. 3 sp<strong>in</strong>-off companies<br />
were funded dur<strong>in</strong>g the period, and we<br />
developed cooperation with many companies<br />
<strong>in</strong> Sweden, Europe and US.<br />
Key research fields are High performance<br />
and low power analog and digital<br />
circuit techniques for processors<br />
and wireless systems; Design, efficient<br />
implementation and new applications of<br />
digital filters; Efficient processor architectures<br />
for network<strong>in</strong>g, wireless baseband<br />
and media; Design methods, test<strong>in</strong>g<br />
and optimization of multicore<br />
systems; and New methods for efficient<br />
device simulation.
40 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
Appendix 4. Assessment criteria<br />
Assessment for scientific quality<br />
Outstand<strong>in</strong>g<br />
World lead<strong>in</strong>g research; of great <strong>in</strong>ternational <strong>in</strong>terest with broad impact and with publications <strong>in</strong> <strong>in</strong>ternationally lead<strong>in</strong>g<br />
journals.<br />
Excellent<br />
<strong>Research</strong> at a very high <strong>in</strong>ternational level; of <strong>in</strong>ternational <strong>in</strong>terest with impact with<strong>in</strong> its field and with publications<br />
<strong>in</strong> <strong>in</strong>ternationally lead<strong>in</strong>g journals.<br />
Very good<br />
Internationally recognized research; with publications <strong>in</strong> <strong>in</strong>ternationally well known journals.<br />
Good<br />
<strong>Research</strong> that is of good <strong>in</strong>ternational standard and partially published <strong>in</strong> well-known <strong>in</strong>ternational journals.<br />
Insufficient<br />
<strong>Research</strong> of low <strong>in</strong>ternational standard.<br />
Grades for strategic relevance – importance for Sweden’s long term competiveness<br />
Very high<br />
High<br />
Medium<br />
Low
Appendix<br />
41<br />
Appendix 5. F<strong>in</strong>ancial support from VR, SSF and V<strong>in</strong>nova<br />
(2003–2007)<br />
Report<strong>in</strong>g Entity Ma<strong>in</strong> grant holder Source Title amount (SEK) Duration<br />
Silicon <strong>Research</strong> at KTH Östl<strong>in</strong>g Mikael SSF High Frequency silicon subproject 25 000 000 2000-2005<br />
Östl<strong>in</strong>g Mikael SSF Nano Electronic MOSFETs 4 500 000 2006-2008<br />
Östl<strong>in</strong>g Mikael VINNOVA MEDEA+ T206 SOI CMOS for low power, 1 000 000 2003-2004<br />
2002-2005, SOI CMOS för lågeffekt och<br />
radiofrekvenstillämpn<strong>in</strong>gar, 2003-00023<br />
Östl<strong>in</strong>g Mikael VINNOVA Silicon based devices and circuits for RF/Wireless 5 700 000 2002-2006<br />
Domeij Mart<strong>in</strong> VINNOVA Silicon Carbide Power Devices and Modules for 3 000 000 2006-2009<br />
Medium and High Voltage<br />
Domeij Mart<strong>in</strong> VR Silicon carbide bipolar junction transistors for 2 025 000 2007-2009<br />
energy efficient power electronic systems<br />
Hallén Anders VR Implantation Technology for Wide Bandgap 2 030 000 2004-2006<br />
Semiconductors<br />
L<strong>in</strong>narsson Margareta VR Diffusion mechanisms for dopants <strong>in</strong> compound 2 030 000 2003-2005<br />
semiconductors<br />
L<strong>in</strong>nros Jan VR ’Recomb<strong>in</strong>ation enhanced phenomena <strong>in</strong> SiC: 2 000 000 2003-2005<br />
Fundamentals and applications’,<br />
L<strong>in</strong>nros Jan VR Synthesis and properties of s<strong>in</strong>gle lum<strong>in</strong>escent 2 030 000 2003-2005<br />
Si quantum dots<br />
L<strong>in</strong>nros Jan VR Synthesis and properties of silicon quantum dots 2 250 000 2006-2008<br />
and nanowires<br />
Willén Bo VR Advanced Collector Design of InP-HBTs for 1 950 000 2002-2004<br />
160-Gb/s Communication System Applications<br />
Zhang Shi-Li VR Fundamental aspects of electrical contact between 2 020 000 2003-2005<br />
carbon nanotubes (CNT) and transition metals for<br />
CNT-based nanoelectronics<br />
Zhang Shi-Li VR Functionalization of carbon nanotubes for 1 950 000 2006-2008<br />
controllable fabrication of field-effect transistors<br />
and electric biosensors<br />
Bakowski Mietek VR New dielectric and semi-<strong>in</strong>sulat<strong>in</strong>g materials for 2 730 000 2002-2005<br />
advanced wide bandgap devices<br />
Silicon <strong>Research</strong> at Uppsala Hultman Lars/ SSF Materials Science and Surface Eng<strong>in</strong>eer<strong>in</strong>g (MS2E) 45 000 000 2006-2010<br />
University<br />
Katardjiev Ilja/<br />
Berg Sören/etc<br />
Olsson Jörgen SSF NEMO – Nano Electronic MOSFETs 1 000 000 2006-2007<br />
Katardjev Ilia SSF Electro-acoustic applications 15 000 000 2003-2007<br />
Olsson Jörgen SSF High Frequency silicon subproject 12 840 000 2000-2005<br />
Hultman Lars/<br />
Katardjiev Ilja/<br />
Berg Sören/etc SSF Low temperature synthesis of th<strong>in</strong> films 33 000 000 2000-2005<br />
Rydberg Anders SSF Antenna <strong>in</strong>tegrated circuit implementation 700 000 2003-2003<br />
techniques for future software radio<br />
Berg Sören VINNOVA SiC-Si hybride substrates 1 500 000 2005-2006<br />
Olsson Jörgen VINNOVA Efficiency and non-l<strong>in</strong>ear effects for RF-power devices 630 000 2005-2006<br />
Gunn<strong>in</strong>gberg Per/ VINNOVA Wireless Sensor Networks (Center of Excellence) 70 000 000 2007-2016<br />
Katardjiev Ilia/<br />
Rydberg Anders/etc<br />
Katardjiev Ilia VINNOVA Real time sens<strong>in</strong>g artificial dog’s nose 4 800 000 2003-2005<br />
Olsson Jörgen VINNOVA Si/SiC hybrid substrate and components 4 000 000 2006-2008<br />
Katardjiev Ilia/ VR Detection of prote<strong>in</strong>, virus and bacteria 2 100 000 2005-2009<br />
Attana AB
42 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
Report<strong>in</strong>g Entity Ma<strong>in</strong> grant holder Source Title amount (SEK) Duration<br />
Katardjiev Ilia/ VR Frequency modulated pressure sensor for 1 720 000 2007-2010<br />
Radi Medical <strong>in</strong>-vivo measurements<br />
Olsson Jörgen VR Theoretical Analysis and Development of 2 030 000 2003-2005<br />
SOI double-gate (DG) and gate-all-around (GAA)<br />
MOS Transistors<br />
Rydberg Anders VR Small Adaptive High Efficiency Integrated 3D 2 200 000 2007-2009<br />
Antennas for Wireless Sensor Networks<br />
Rydberg Anders VR Hybrid photonic-antennna-matrix for 5 and 17 GHz 1 828 000 2003-2006<br />
Rydberg Anders VR Small Adaptive High Efficiency Integrated 3D 2 229 000 2007-2009<br />
Antennas for Wireless Sensor Networks<br />
Silicon Carbide <strong>Research</strong> Janzén Erik SSF SiC Materials 20 000 000 2003-2007<br />
at L<strong>in</strong>köp<strong>in</strong>g University Janzén Erik VR Properties of high-purity SiC 1 950 000 2002-2004<br />
Janzén Erik VR Bulk growth of GaN 3 925 000 2005-2007<br />
Bergman, Peder VR Understand<strong>in</strong>g, characterisation and 2 100 000 2003-2005<br />
reduction of dislocations <strong>in</strong> SiC.<br />
Kakanakova Anelia VR Epitaxial Growth of GaN and related alloys 2 980 000 2003-2006<br />
<strong>in</strong> a hot-wall MOCVD reactor<br />
Gallium Nitride <strong>Research</strong> Monemar Bo VR III-nitrides, hydride CVD growth and physical 1 950 000 2002-2004<br />
at L<strong>in</strong>köp<strong>in</strong>g University<br />
properties<br />
Monemar Bo VR Basic semiconductor physics 2 830 000 2003-2005<br />
Monemar Bo VR Growth of bulk GaN with HVPE 670 000 2004<br />
Buyanova Ir<strong>in</strong>a VR New photonic material based on nitrogen 1 950 000 2002-2004<br />
conta<strong>in</strong><strong>in</strong>g III-V ternary and quaternary alloys<br />
Buyanova Ir<strong>in</strong>a VR New photonic materials based on nitrogen conta<strong>in</strong><strong>in</strong>g 1 960 000 2005-2007<br />
III-V ternary and quaternary allosy<br />
Chen Weim<strong>in</strong> VR Physics of sp<strong>in</strong>tronic of semiconductor and 1 950 000 2005-2007<br />
nanostructures<br />
Chen Weim<strong>in</strong> VR Defect Spectroscopy of silicon carbide 2 030 000 2003-2005<br />
Chen Weim<strong>in</strong> VR Physics of semiconductor sp<strong>in</strong>tronic materials 2 100 000 2005-2007<br />
and nanostructures<br />
Darakchieva Vanya VR Fysik av III-Nitrid multi functional materials and low 3 370 000 2006-2009<br />
dimensionals structures<br />
Paskov Plamen VR GaN/AlGaN nanostructures for <strong>in</strong>frared optoelectronic 1 780 000 2006-2008<br />
applications<br />
Janzen Erik VR Bulk Growth of GaN 3 425 000 2005-2007<br />
Janzen Erik VR Bulk Growth of GaN 500 000 2006-2007<br />
Silicon <strong>Research</strong> at Enoksson Peter SSF Beam steer<strong>in</strong>g 4 000 000 2003-2006<br />
Chalmers Enoksson Peter SSF NanoDev 900 000 2003-2007<br />
Engström Olof SSF NanoDev 900 000 2003-2007<br />
Enoksson Peter SSF Caramel 900 000 2003-2007<br />
Engström Olof SSF High Frequency silicon subproject 1 900 000 2006-2008<br />
Enoksson Peter VINNOVA Intellisense Nordic 1 800 000 2004-2007<br />
Enoksson Peter VINNOVA V<strong>in</strong>nova SLM 3 000 000 2003-2007<br />
Lundgren Per VR A Silicon Interface to Molecular Electronics 1 950 000 2002-2004<br />
Microwaves <strong>Research</strong> Zirath Herbert SSF High speed electronics and photonics HSEP 7 300 000 2003-2007<br />
at Chalmers Zirath Herbert SSF Wide-bandgap Microwave Devices 12 000 000 2003-2007<br />
Grahn Jan SSF Subproject SFC HSEP 6 400 000 2003-2007<br />
Grahn Jan VINNOVA Chalmers competence center for high speed technology 75 000 000 1995-2005<br />
Zirath Herbert VINNOVA High frequency and high Powert SiC MESFET 3 600 000 2005-2006<br />
Swahn Thomas VINNOVA OptCom 9 050 000 2005-2006<br />
Zirath Herbert VINNOVA HI-MISSION 1 400 000 2005-2007<br />
Zirath Herbert VINNOVA 60 GHz MMIC 269 000 2007<br />
Grahn Jan VR 200 GHz mixers based on ultra-high speed 2 030 000 2003-2005<br />
InP HEMT technology
Appendix<br />
43<br />
Report<strong>in</strong>g Entity Ma<strong>in</strong> grant holder Source Title amount (SEK) Duration<br />
Terahertz Systems <strong>Research</strong> Stake Jan SSF Subproject SFC HSEP 2 000 000 2003-2007<br />
at Chalmers Gevorgian Spartak SSF Subproject SFC HSEP 5 700 000 2003-2007<br />
Gevorgian Spartak VR Components for future micro/millimetre wave 2 730 000 2002-2004<br />
systems<br />
Gevorgian Spartak VR Tuneable Integrated Microwave Metamaterials (TIME) 1 790 000 2002-2008<br />
Nanotubes <strong>Research</strong> at Campbell Eleanor SSF CMOS Integrated Carbon-based Nano Components 10 000 000 2003-2007<br />
Chalmers Campbell Eleanor SSF CARAMEL 18 000 000 2000-2007<br />
Svensson Krister VR Electron Transport and Electromigration <strong>in</strong> 2 150 000 2004-2006<br />
Carbon Nanotubes (ETEC)<br />
Svensson Krister VR Electron transport and <strong>in</strong>fluence of mechanical 2 150 000 2007-2009<br />
stress <strong>in</strong> nanoscale structures (ETIM)<br />
Quantum Electronics Dels<strong>in</strong>g Per SSF Nanodevices and quantum comput<strong>in</strong>g NANODEV 30 000 000 2003-2007<br />
<strong>Research</strong> at Chalmers Claeson Tord SSF Transport <strong>in</strong> low dimensional systems: carbon nanotubes, 1 500 000 2004-2007<br />
sp<strong>in</strong>tronics<br />
Kubatk<strong>in</strong> Sergey SSF Molecular electronics, fullerens, and carbon 2003-2007<br />
nanotubes, *Part of Nanodev reported <strong>in</strong>dependently<br />
Dels<strong>in</strong>g Per VR Ultrafast charge sensors-2 4 600 000 2006-2008<br />
Kuzm<strong>in</strong> Leonid VR On-Chip Cascade Quasiparticle Amplifier for 2 030 000 2003-2005<br />
Bolometer Readout<br />
Kuzm<strong>in</strong> Leonid VR Cryogen-free He3 cryostat 760 000 2005<br />
Kuzm<strong>in</strong> Leonid VR Carbon Nanotube based Electron Cool<strong>in</strong>g and 1 500 000 2006-2007<br />
Supersensitive Detection<br />
Lombardi Filomena VR Material and technological aspects of HTS parity 2 850 000 2002-2005<br />
switches for superconduct<strong>in</strong>g phase qubits<br />
Wend<strong>in</strong> Göran VR Quantum Comput<strong>in</strong>g with Josephson Junctions 1 600 000 2002-2004<br />
Nanostructure Physics Haviland David SSF Magneto-Electronic Nanodevices 8 600 000 2003-2007<br />
<strong>Research</strong> at KTH Haviland David SSF Nano Devices and Coponants 2 500 000 2003-2007<br />
(Dels<strong>in</strong>g Per)<br />
(NanoDev, with Chalmers)<br />
Haviland David SSF Bio-Electronic Interfaces (BioX program) 2 750 000 2005-2007<br />
(Ulfendahl Mats)<br />
Haviland David VR Quantum Phase Transition and Quantum 2 025 000 2003-2006<br />
Electrodynamics<br />
Haviland David VR Nano Patterned Prote<strong>in</strong> b<strong>in</strong>d<strong>in</strong>g on electronic 2 400 000 2001-2003<br />
substrates<br />
Korenivski Vlad VR Sp<strong>in</strong> resonant tunnel<strong>in</strong>g nano-devices 2 350 000 2007-2009<br />
Sp<strong>in</strong>tronics <strong>Research</strong> Rao K.Venkat VINNOVA Ferromagnetic Semiconductors for 2 000 000 2005-2007<br />
at KTH<br />
Sp<strong>in</strong>tronics -Phase II<br />
Rao K Venkat VINNOVA Ferromagnetic Semiconductors for Sp<strong>in</strong>tronics and 1 000 000 2004-2006<br />
Magnetooptic devices<br />
Nanometer Structures Samuelson Lars SSF <strong>Microelectronics</strong> Center: Nano science for 40 000 000 2003-2007<br />
<strong>Research</strong> at Lund University<br />
future Electronic Devices.<br />
Samuelson Lars SSF Materials Consortium: Quantum Materials 25 000 000 2000-2005<br />
Wernersson Lars-Erik SSF INGVAR Grant 6 000 000 2005-2008<br />
Samuelson Lars SSF Graduate School: Nano Science 5 000 000 2003-2005<br />
Samuelson Lars SSF Strategic <strong>Research</strong> Center: Nanowires for Emerg<strong>in</strong>g 34 000 000 2006-2010<br />
Nanoelectronics and Life Science Applications.<br />
Montelius Lars VINNOVA VINST Next NIL 3 737 000 2002-2004<br />
Wallenberg Re<strong>in</strong>e VR Nanostructured Functional Materials 675 000 2004<br />
Tegenfeldt Jonas VR DNA <strong>in</strong> Nanoscale Conf<strong>in</strong>ed Environments 2 286 000 2008-2010<br />
Deppert Knut VR Experimental and Numerical Investigation of 1 040 000 2002-2003<br />
Aerosol Nucleation <strong>in</strong> Non-Isothermal Flow<br />
Deppert Knut VR Dedicated Cluster Tool for Nanowire Growth 8 060 000 2005-2010<br />
Wernersson Lars-Erik VR Heterogeneous Integration of Narrow Band Gap Materials 2 200 000 2007-2009
44 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
Report<strong>in</strong>g Entity Ma<strong>in</strong> grant holder Source Title amount (SEK) Duration<br />
Wallenberg Re<strong>in</strong>e VR Nanostructured Functional Materials 1 490 360 2005-2007<br />
Höök Fredrik VR Multiparameter QCM-D Measurements on 1 080 000 2004-2005<br />
Array-Based Formats for Applications <strong>in</strong> Biotechnology<br />
Höök Fredrik VR M<strong>in</strong>iaturzed Parellel Sensors for Studies of Membrane 3 171 000 2006-2008<br />
Prote<strong>in</strong>s<br />
Höök Fredrik VR Novel Sensor Concepts Based on Electromechanical 2 566 200 2006-2008<br />
and Optical Readouts for Applications <strong>in</strong> Biotechnology<br />
Samuelson Lars VR Nanowires for Fundamental Materials science and 22 000 000 2005-2010<br />
Quantum Physics and for Applications <strong>in</strong> Electronics,<br />
Photonics and <strong>in</strong> Life-sciences<br />
Wallenberg Re<strong>in</strong>e VR Fabrication, Characterization and Applications of 1 755 000 2002-2004<br />
Nanowhiskers<br />
Xu Hongqi VR Theoretical Study of Molecular and Electronic Structure 1 060 800 2002-2004<br />
of Semiconductor Nanocrystals<br />
Pistol Mats-Erik VR Theory and Experiments of Quantum Optics Based on 1 880 643 2005-2007<br />
Quantum Dots<br />
Pistol Mats-Erik VR Theory and Experiment of Novel Quantum Wire Structures 1 950 000 2008-2010<br />
Samuelson Lars VR Optical and electrical studies of s<strong>in</strong>gle quantum 3 900 000 2002-2003<br />
structures and s<strong>in</strong>gle molecules<br />
Pistol Mats-Erik VR Quantum optics based on quantum dots 1 365 000 2002-2004<br />
Hongqi Xu VR Three-term<strong>in</strong>al ballistic junctions as build<strong>in</strong>g blocks 2 028 000 2003-2005<br />
for nanoscale electronic devices: design, fabrication,<br />
characterization and model<strong>in</strong>g<br />
Hongqi Xu VR Three-term<strong>in</strong>al ballistic junctions as build<strong>in</strong>g blocks for 2 850 000 2006-2008<br />
nanoscale electronic devices: design, fabrication,<br />
characterization and model<strong>in</strong>g<br />
Wacker Andreas VR Scatter<strong>in</strong>g and Coherence <strong>in</strong> Quantum Cascade Lasers 700 000 2005-2007<br />
Wacker Andreas VR Employment as Scientist 953 100 2003-2008<br />
Samuelson Lars VR L<strong>in</strong>né Grant: Nanoscience and Quantum Eng<strong>in</strong>eer<strong>in</strong>g. 75 000 000 2006-2016<br />
Samuelson Lars VR Studies of Hetero- and Quantumstructures <strong>in</strong> Nanowires 2 850 000 2006-2008<br />
Underly<strong>in</strong>g Applications <strong>in</strong> Electronics, Photonics and <strong>in</strong><br />
Thermoelectrics<br />
VR Photonics and Electronics <strong>in</strong> One-Dimensional Nanowires 1 976 000 2003<br />
VR Photonics and Electronics <strong>in</strong> One-Dimensional Nanowires 861 667 2005<br />
Pistol Mats-Erik VR Modell<strong>in</strong>g and Optical Studies of Quantum Structures 811 200 2003-2004<br />
Tegenfeldt Jonas VR Microfabricated Nearfield Optical Scanner for DNA, 4 050 384 2003-2006<br />
Prote<strong>in</strong> and Cell Studies<br />
Samuelson Lars VR Studies of Hetero- and Quantum <strong>in</strong> 0D and 1D 2 028 000 2003-2005<br />
Deppert Knut VR Novel Nanomaterials by Metallurgy <strong>in</strong> the Aerosol Phase 1 822 500 2004-2006<br />
Wernersson Lars-Erik VR Metalorganic Vapour Phase Epitaxy System for III-V Materials 7 700 000 2004-2008<br />
Wallenberg Re<strong>in</strong>e VR Employment as Scientist <strong>in</strong> the Subject “Inorganic Synthesis 3 365 120 2002-2003<br />
and Characterization of Cluster” dur<strong>in</strong>g<br />
2001-01-01—2003-12-31<br />
Organic Electronics Inganäs Olle SSF Organic electroncs 31 000 000 2003-2007<br />
<strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Inganäs Olle VINNOVA Molekylära elektroniska mask<strong>in</strong>er 4 500 000 2003-2006<br />
University Inganäs Olle VR Metal-semiconductor transition <strong>in</strong> oriented conjugated 2 730 000 2002-2004<br />
polymer films <strong>in</strong> field effect devices<br />
Inganäs Olle VR Biomolekyldetektion med konjugerade polyelektrolyter 2 100 000 2006-2008<br />
Paper Electronics Berggren Magnus SSF INGVAR Programme 10 000 000 2001-2007<br />
<strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Berggren Magnus SSF Strategic <strong>Research</strong> Centre of Organic Bioelectronics 37 000 000 2006-2010<br />
University Richter Dahlfors Agneta SSF Bio-X: Organisk Elektronik för regler<strong>in</strong>g av cellers signalvägar 5 500 000 2005-2008<br />
and Magnus Berggren<br />
Berggren Magnus VR Ion and Fluid Logics: Novel Organic Electrochemical 2 030 000 2003-2005<br />
Transistors<br />
Berggren Magnus VR Organic diodes and transistors <strong>in</strong>clud<strong>in</strong>g molecular switches 1 790 000 2006-2008
Appendix<br />
45<br />
Report<strong>in</strong>g Entity Ma<strong>in</strong> grant holder Source Title amount (SEK) Duration<br />
Photonic Communication Andrekson Peter SSF Subproject SFC HSEP 4 000 000 2003-2007<br />
<strong>Research</strong> at Chalmers Andrekson Peter SSF Subproject SFC HSEP 7 000 000 2003-2007<br />
Andrekson Peter VINNOVA 100 GET prestudy 500 000 2007<br />
Andrekson Peter VR Ultra-Broadband Fiber-Optic Parametric Amplifiers and 2 800 000 2007-2009<br />
Their Applications<br />
Andrekson Peter VR Experiments <strong>in</strong> cod<strong>in</strong>g and equalization for high-speed 2 000 000 2004<br />
optical communication systems<br />
Karlsson Magnus VR Ultrahigh speed optical transmission impairments and 2 730 000 2002-2004<br />
their remedy<br />
Karlsson Magnus VR New functionailities <strong>in</strong> optical networks 2 250 000 2006-2008<br />
Andrekson Peter VR Cod<strong>in</strong>g and equalization for optical communication systems 2 100 000 2004-2007<br />
Andrekson Peter VR Cod<strong>in</strong>g and equalization for optical communication systems 2 800 000 2007-2009<br />
Photonic Components Willander Magnus SSF Wide-Bandgap Nanolasers 10 000 000 2003-2007<br />
<strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Willander Magnus VR Technical and medical applications of ZnO 3 000 000 2007-2009<br />
University<br />
Quantum Optics <strong>Research</strong> Karlsson Anders SSF INGVAR grant, A. Karlsson 10 000 000 2001-2007<br />
at KTH Björk Gunnar SSF Subproject SFC Photonics 8 000 000 2003-2007<br />
Björk Gunnar VR Fundamentals and applications of quantum <strong>in</strong>terference 2 800 000 2003-2005<br />
Björk Gunnar VR Quantum <strong>in</strong>formation: Multipartite entanglement 2 800 000 2006-2008<br />
Karlsson Anders VR Photonic Quantum Information Technologies 1 500 000 2005-2007<br />
Photonic Devices <strong>Research</strong> Larsson Anders SSF Dilute nitrides for photonics 12 000 000 2003-2007<br />
at Chalmers Larsson Anders SSF Semiconductor lasers for optical networks and 10 000 000 2003-2007<br />
<strong>in</strong>terconnects (part of HSEP)<br />
Galt Sheila SSF Microoptics and diffractive optics for communication and 5 500 000 2003-2007<br />
signal process<strong>in</strong>g (part of HSEP)<br />
Rudquist Per SSF Analog electrooptic effects <strong>in</strong> ferroelectric and antiferro- 2 700 000 2003-2007<br />
electric liquid crystals, part of HSEP (NSF/SSF)<br />
Larsson Anders VINNOVA High speed optoelectronics for optical <strong>in</strong>terconnects (CHACH) 2 600 000 2003-2005<br />
Larsson Anders VINNOVA Low cost solutions for broadband access 3 200 000 2003-2006<br />
Wang Shum<strong>in</strong> VR Metamorphic Long Wavelength Lasers on GaAs 2 025 000 2004-2006<br />
Wang Shum<strong>in</strong> VR Metamorphic long wavelength lasers on patterned GaAs and Si 2 230 000 2007-2009<br />
Rudquist Per VR Electrooptic applications of orthoconic antiferroelectric liquid 1 460 000 2001-2003<br />
crystals and analog response <strong>in</strong> ferroelectric liquid crystals<br />
Rudquist Per VR Polar effects and fundamental physics of chiral liquid crystals 650 000 2002-2003<br />
Larsson Anders VR Vertical external cavity surface emitt<strong>in</strong>g lasers 2 028 000 2003-2005<br />
Larsson Anders VR Optically pumped semiconductor disk lasers 2 300 000 2007-2009<br />
Photonic and Microwave Qiu M<strong>in</strong> SSF Photonic crystals: Light Magic at Work 6 000 000 2005-2008<br />
Eng<strong>in</strong>eer<strong>in</strong>g <strong>Research</strong> Thylén Lars SSF Subproject Photonics 52 000 000 2003-2007<br />
at KTH Thylén Lars VINNOVA High speed photonics 5 000 000 2002<br />
Thylén Lars VINNOVA Fast optical transmitters 9 050 000 2005-2006<br />
Larsson Anders VINNOVA Low-cost components for broadband access networks 3 317 000 2004-2006<br />
Ghisoni Marco, Zarl<strong>in</strong>k VINNOVA Optical Duplexer Innovative packag<strong>in</strong>g for access Networks 1 166 000 2006-2007<br />
Semiconductor AB<br />
Hammar, Mattias VR Advanced technologies for surface-emitt<strong>in</strong>g optoelectronics 1 690 000 2004-2006<br />
Jaskorzynska Bozena VR Optical devices <strong>in</strong> silicon-based photonic crystals 2 030 000 2003-2005<br />
Pasiskevicius Valdas VR Control of optical signals with non-l<strong>in</strong>ear ferro-electric 1 660 000 2003-2005<br />
structures<br />
Qiu M<strong>in</strong> VR Large scale computational analysis and design of photonic 2 020 000 2004-2006<br />
<strong>in</strong>tegrated circuits<br />
Qiu M<strong>in</strong> VR Photonic crystals with dispersive media 2 150 000 2007-2008<br />
Sr<strong>in</strong>ivasan Anand VR Negative refraction <strong>in</strong> two-dimensional photonic crystals 2 150 000 2007-2009<br />
Qiu M<strong>in</strong> VR Design, nanofabrication, and characterization of optical 3 037 500 2007-2009<br />
metamaterials
46 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
Report<strong>in</strong>g Entity Ma<strong>in</strong> grant holder Source Title amount (SEK) Duration<br />
Photonic Materials Thylen Lars VR Intersubband modulator structures 620 000 2003-2004<br />
<strong>Research</strong> at Chalmers Andersson Thorvald VR GaN-research on <strong>in</strong>tersubband structures 500 000 2003-2005<br />
Thylen Lars VR GaN-modulators 900 000 2005-2007<br />
Andersson Thorvald VR Molecular Layers on Semiconductors Grown by organic 1 950 000 2002-2004<br />
molecular beam epitaxy<br />
Andersson Thorvald VR Basic growth issues of MBE-grown GaN materials for devices 1 950 000 2002-2004<br />
System Design <strong>Research</strong> Ismail Mohammed SSF Radio and Mixed signal 25 000 000 2003-2007<br />
at KTH Ismail Mohammed VR A Broadband CMOS “Sniffer” for Always-Best Connected 4G 2 250 000 2006-2008<br />
Wireless Access<br />
Dubrova Elena VR Efficient Algorithms for Probabilistic Verification 2 030 000 2003-2005<br />
Tenhunen Hannu VR Next generation of passive radioferequency identification 2 100 000 2005-2007<br />
enabl<strong>in</strong>g by ultrawide band radio<br />
System Design <strong>Research</strong> Karlsson Johan M SSF Personal Comput<strong>in</strong>g and Communication 14 200 000 1997-2005<br />
at Lund University Anderson John B SSF High Speed Wireless Center 5 000 000 2006-2010<br />
Sundström Lars VINNOVA Integrated Technologies for Wireless Telecommunications 5 400 000 1998-2004<br />
Sjöland Henrik VINNOVA Hi-Mission 800 000 2006-2008<br />
Yuan Jiren VINNOVA Competence Center for Circuit Design 56 000 000 1998-2007<br />
Sjöland Henrik VINNOVA Technology for cheap 60GHz WLAN and cont’d 5 000 000 2003-2008<br />
Nilsson Peter VR Hardware Architectures for MIMO Systems 2 250 000 2006-2008<br />
Öwall Viktor VR Design Techniques for Ultra Low Energy Digital Circuits- 1 200 000 2007-2009<br />
Sub-threshold Operation and Leakage Reduction<br />
System Design <strong>Research</strong> Stenström Per SSF Flexible System-on-chip 8 000 000 2003-2007<br />
at Chalmers Hughes John VR Typ<strong>in</strong>g Erlang 1 800 000 2005-2007<br />
Jeppson Kjell VR Noise Coupl<strong>in</strong>g Analysis and Transistor Model<strong>in</strong>g for 2 020 000 2004-2006<br />
High-Frequency Nanoscale SoCs<br />
Larsson-Edefors Per VR Tuned Power Gat<strong>in</strong>g under Application Control 2 230 000 2007-2009<br />
Hughes John VR Session types meet <strong>in</strong>dustrial software 1 800 000 2006-2009<br />
System Design <strong>Research</strong> Svensson Christer SSF Integrated electronic systems 50 000 000 2003-2007<br />
at L<strong>in</strong>köp<strong>in</strong>g University Wahab Qamar-ul VINNOVA Optimization of LDMOS transistor for RF applications 1 300 000 2005-2006<br />
Liu Dake VINNOVA Socware project 2 250 000 2003-2005<br />
Liu Dake VINNOVA Socware project 3 000 000 2003-2005<br />
Peng Zebo VINNOVA SoC design for testability 3 500 000 2002-2004<br />
Johansson Håkan VR Effektiva och flexibla algoritmer för digital signalbehandl<strong>in</strong>g 1 944 000 2006-2008<br />
Löwenborg Per VR Flexibla analoga/digitala gränssnitt med höga prestanda 1 863 000 2005-2007<br />
Svensson Christer VR Direct RF sampl<strong>in</strong>g for future radio architectures 2 250 000 2006-2008<br />
Alvandpour Atila VR Process-Variation-Tolerant, Ultra Low Power, High-Speed 2 250 000 2006-2008<br />
Analog-to-Digital Conversion<br />
Wanhammar Lars VR Energieffektiva signaler och systems 1 863 000 2005-2007<br />
Gustafsson Oscar VR Samdesign av algoritm och hårdvara för applikationer 2 025 000 2007-2009<br />
begränsade av m<strong>in</strong>ne och kommunikation<br />
Gustafsson Oscar VR Energieffektiv aritmetik 3 240 000 2004-2007
Appendix<br />
47<br />
Appendix 6. Background of experts<br />
Personal <strong>in</strong>formation<br />
Name:<br />
Affiliation:<br />
Robert W. Brodersen<br />
University of California, Berkeley<br />
Professor Emeritus<br />
Department of Electrical Eng<strong>in</strong>eer<strong>in</strong>g and Computer<br />
Science University of California, Berkeley<br />
Telephone: +1 510 666 31 10<br />
E-mail:<br />
bwb@bwrc.eecs.berkeley.edu<br />
Year of birth: 1945<br />
Native country: USA<br />
Academic Degrees:<br />
1966 Bachelor’s of Science degrees <strong>in</strong> Electrical<br />
Eng<strong>in</strong>eer<strong>in</strong>g and Mathematics from the California State<br />
Polytechnic University, Pomona, CA<br />
1968 Eng<strong>in</strong>eer<strong>in</strong>g and Master’s of Science degrees from<br />
the Massachusetts Institute of Technology (MIT)<br />
Cambridge<br />
1972 Ph.D. <strong>in</strong> Eng<strong>in</strong>eer<strong>in</strong>g from MIT<br />
Employment history<br />
1976–1976 Member of the Technical Staff, Central <strong>Research</strong><br />
Laboratory, Texas Instruments, Dallas.<br />
1976– EECS faculty at the University of California<br />
Special Assignments<br />
Professor Brodersen is the author or co-author of numerous journal and conference<br />
papers and author, co-author, editor or contributor to 16 books <strong>in</strong>clud<strong>in</strong>g: Anatomy<br />
of a Silicon Compiler, 1992, Low Power Digital CMOS Design, 1995, Low-Power<br />
CMOS Wireless Communications: A Wideband CDMA System Design, 1998 and<br />
Energy Efficient Micro Processor Design, 2001. He was a co-founder of Atheros,<br />
Inc., and is now chairman of SiBEAM, BeeCUBE and Adaptrum. He is a Fellow of<br />
the IEEE and member of the National Academy of Eng<strong>in</strong>eer<strong>in</strong>g.<br />
Scientific Activities and Interests<br />
Professor Brodersen’s research focus is on new applications of <strong>in</strong>tegrated<br />
circuits as applied to personal communications systems with emphasis on wireless<br />
communications, low power design and the CAD tools necessary to support these<br />
activities.
48 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
Personal <strong>in</strong>formation<br />
Name:<br />
Affiliation:<br />
Qiut<strong>in</strong>g Huang<br />
Swiss Federal Institute of Technology (ETH) Zurich<br />
Telephone: +41 446 32 52 40<br />
E-mail:<br />
huang@iis.ee.ethz.ch<br />
Year of birth: 1957<br />
Native country: USA<br />
Academic Degrees:<br />
B.Sc <strong>in</strong> 1982 from Harb<strong>in</strong> Institute of Technology<br />
Ph.D <strong>in</strong> 1987 from the Katholieke Universiteit Leuven,<br />
Belgium.<br />
Special Assignments<br />
In 2007 Professor Huang was awarded a Cheung Kong Scholar Professorship by the<br />
Ch<strong>in</strong>ese M<strong>in</strong>istry of Education and the Cheung Kong Foundation, and spends part<br />
of his time at the South East University <strong>in</strong> Nanj<strong>in</strong>g, Ch<strong>in</strong>a. He is a Fellow of the IEEE<br />
and serves on the executive committee of the IEEE International Solid-State Circuits<br />
Conference (ISSCC). He is also a member of wireless subcommittee of ISSCC<br />
and the chairman of its European Steer<strong>in</strong>g Committee. Furthermore, Professor<br />
Huang has been serv<strong>in</strong>g on the technical program committee of the European Solid-<br />
State Circuits Conference (ESSCIRC) <strong>in</strong> the past 15 years.<br />
Scientific Activities and Interests<br />
Prof. Huang is an acknowledged expert <strong>in</strong> mixed signal analogue-digital <strong>in</strong>tegrated<br />
circuits, and radio frequency (RF) circuits and systems for communications. He was<br />
one of the pioneers <strong>in</strong> the use of CMOS technology for RF applications and played a<br />
key role <strong>in</strong> the wireless <strong>in</strong>dustry’s acceptance of RF CMOS for cellular applications.<br />
His research group published the world’s first RF CMOS transceiver for GSM, as<br />
well as WCDMA. He also led the development of an RF CMOS transceiver for the<br />
IEEE 802.11g wireless LAN standard. His research group also developed the<br />
world’s lowest power pag<strong>in</strong>g receiver for the ERMES standard, and GPS receiver.<br />
Outside RFICs, Prof. Huang published extensively on A-D and D-A converters, <strong>in</strong>tegrated<br />
circuits for sensor <strong>in</strong>terface and Microsystems, <strong>in</strong>tegrated circuits for passive<br />
telemetry and other biomedical applications, smart power <strong>in</strong>tegrated circuits,<br />
very high speed digital <strong>in</strong>tegrated circuits as well as application specific <strong>in</strong>tegrated<br />
circuits for digital baseband modem, <strong>in</strong>clud<strong>in</strong>g an HSDPA receiver and a turbo decoder<br />
for HSDPA.<br />
Professor Huang has collaborated with <strong>in</strong>dustry extensively, and his group spun out<br />
three startup companies. He is the founder of Advanced Circuit Pursuit AG, which<br />
develops highly <strong>in</strong>tegrated RF CMOS transceivers for cellular applications.
Appendix<br />
49<br />
Personal <strong>in</strong>formation<br />
Name:<br />
Affiliation:<br />
Mikko Paalanen<br />
Hels<strong>in</strong>ki University of Technology<br />
Telephone: +358 50 352 88 99<br />
E-mail:<br />
paalanen@neuro.hut.fi<br />
Year of birth: 1948<br />
Native country: F<strong>in</strong>land<br />
Academic Degrees: MSc, Hels<strong>in</strong>ki University of Technology 1972<br />
MSc, University of Ill<strong>in</strong>ois, Champaign Urbana, USA 1973<br />
PhD, Hels<strong>in</strong>ki University of Technology, 1977<br />
Employment history<br />
1977–1992 Member of technical staff, AT&T Bell<br />
1992–1995 Professor <strong>in</strong> Applied Physics, Univ. of Jyväskylä, F<strong>in</strong>land<br />
1996–present<br />
Director, Low Temperature Laboratory, Hels<strong>in</strong>ki University<br />
of Technology, F<strong>in</strong>land<br />
Special Assignments<br />
Chairman of LT22, Int. Conf. on Low Temperature Physics 1999, 1380 participants<br />
Chairman of IUPAP C5, Commission on Low Temperature Physics, 2006–2008<br />
Chairman of ERC PE3, Panel on Condensed Matter Physics, Start<strong>in</strong>g grant 2008<br />
Member of London Prize Selection Panel, 2005–2008<br />
Member of Simon Prize (Institute of Physics, UK) Selection Panel, 2008–2011<br />
Editor of Journal of Low Temperature Physics, 2005–<br />
Scientific Activities and Interests<br />
In his thesis work Prof. Paalanen studied superfluid 3He with NMR method. At Bell<br />
Laboratories he shifted his <strong>in</strong>terest <strong>in</strong> semiconductor physics, especially <strong>in</strong> electron<br />
transport <strong>in</strong> low dimensional structures. He studied electron localization <strong>in</strong> 3D<br />
doped silicon, 2D GaAs/AlGaAs heterostructures and more recently also <strong>in</strong> 1D carbon<br />
nanotubes. Other topics of his <strong>in</strong>terest at Bell Laboratories were Quantum Hall<br />
effect, Fractional Quantum Hall effect and superconductor-<strong>in</strong>sulator transition <strong>in</strong> 2D<br />
InO films. After mov<strong>in</strong>g to F<strong>in</strong>land <strong>in</strong> 1992 he has dedicated his time to studies of<br />
s<strong>in</strong>gle electron transistor and its various applications. Very recently superconduct<strong>in</strong>g<br />
s<strong>in</strong>gle electron transistor has turned out to be a promis<strong>in</strong>g platform for quantum<br />
comput<strong>in</strong>g.
50 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
Personal <strong>in</strong>formation<br />
Name:<br />
Affiliation:<br />
Klaus Petermann<br />
Technische Universität Berl<strong>in</strong><br />
Telephone: +49 30 314 233 46<br />
E-mail:<br />
petermann@tu-berl<strong>in</strong>.de<br />
Year of birth: 1951<br />
Native country: Germany<br />
Academic Degrees:<br />
1974 Dipl. Ing<br />
1976 Dr. Ing.<br />
Employment history<br />
1974–1976 <strong>Research</strong> associate at Technische Universität<br />
Braunschweig<br />
1977–1983 Scientific staff member Forschungs<strong>in</strong>stitut AEG<br />
Telefunken Ulm<br />
S<strong>in</strong>ce 1983<br />
full Professor Technische Universität Berl<strong>in</strong><br />
Special Assignments<br />
1989–1989 Dean of the faculty „Electrical Eng<strong>in</strong>eer<strong>in</strong>g“ at the TU<br />
Berl<strong>in</strong><br />
1997–2002 Head of the Commision for <strong>Research</strong> and scientific<br />
tra<strong>in</strong><strong>in</strong>g at the TU Berl<strong>in</strong><br />
2004–2006 Vice-president for research at the TU Berl<strong>in</strong><br />
Scientific Activities and Interests<br />
1990–2006 Reviewer and project supervisor at the BMBF with<strong>in</strong><br />
photonics and new communication networks (KOMNET,<br />
Multi-Tera-Net)<br />
1997–2002 Affiliate for the DFG at the Technische Universität Berl<strong>in</strong><br />
1996–1996 President of the German „Fakultätentag“ for Electrical<br />
Eng<strong>in</strong>eer<strong>in</strong>g<br />
s<strong>in</strong>ce 1994<br />
Elected member of the Berl<strong>in</strong>-Brandenburg Academy of<br />
sciences<br />
s<strong>in</strong>ce 2002<br />
Elected member of acatech (German academy of<br />
technical sciences)<br />
1999–2004 Associate Editor, IEEE Photonics Technology Letters<br />
1996–2004 Member of the board of the VDE<br />
s<strong>in</strong>ce 2001<br />
Member of the senate of the DFG
Appendix<br />
51<br />
Personal <strong>in</strong>formation<br />
Name:<br />
Affiliation:<br />
Krishna C. Saraswat<br />
Stanford University, Department of Electrical Eng<strong>in</strong>eer<strong>in</strong>g<br />
Telephone: +1 650 725 36 10<br />
E-mail:<br />
saraswat@stanford.edu<br />
Year of birth: 1947<br />
Native country: Born <strong>in</strong> India, Citizen of USA<br />
Academic Degrees:<br />
1971–74 Ph.D. Electrical Eng<strong>in</strong>eer<strong>in</strong>g, Stanford University<br />
1968–69 M.S. Electrical Eng<strong>in</strong>eer<strong>in</strong>g, Stanford University<br />
1963–68 B.E. Electronics, Birla Institute of Technology and Science, India<br />
Employment history<br />
2004– Rickey/Nielsen Chair Professor of Eng<strong>in</strong>eer<strong>in</strong>g, Stanford University<br />
1983– Professor of Electrical Eng<strong>in</strong>eer<strong>in</strong>g, Stanford University<br />
1974–83 Member of <strong>Research</strong> Staff, Integrated Circuits Laboratory,<br />
Stanford University<br />
1969–70 Product Eng<strong>in</strong>eer, Texas Instruments, Dallas Texas<br />
Special Assignments<br />
Consultant and on the board of many companies.<br />
Cofounder of Sensys Instruments (later acquired by Thermawave)<br />
Cofounder of Solexel, Inc.<br />
Assoc. Director, Sematech/SRC Center for Environmentally Benign Manufactur<strong>in</strong>g of<br />
Semiconductors, s<strong>in</strong>ce 1999.<br />
Member, IEEE Grove Award evaluation committee, 2008.<br />
Member, IEEE Fellow evaluation committee, 94–2003.<br />
Member, Technical Committee, IEEE Int. Interconnect Tech. Conf. 97–2003,<br />
Chair 2002.<br />
Member, Technical Committee, IEEE Int. Reliability Physics Symp. 97–98<br />
Member, Technical Committee, IEEE Int. Symp. on VLSI Tech.1984-89, 92–97.<br />
Member, Technical Committee, Int Workshop on Statistical Metrology. 95–97.<br />
Member, Technical Committee, ESSDERC’92<br />
Associate Editor, IEEE Transactions on Electron Device , 1988–90<br />
Chairman, Workshop on CVD Tungsten, 1989, Member Technical Committee, 1985–86<br />
Member, Technical Committee, IEEE Int. Device <strong>Research</strong> Conf. 1985–88<br />
United Nations UNIDO expert on microelectronics <strong>in</strong> India, summer of 1985<br />
Chairman, IEEE IEDM Device Technology group 1984, Member Technical Committee, 1982–83<br />
Scientific Activities and Interests<br />
Professor Saraswat’s research <strong>in</strong>terests are <strong>in</strong> new and <strong>in</strong>novative materials, structures, and<br />
process technology of silicon, germanium and III-V devices and <strong>in</strong>terconnects for nanoelectronics.<br />
He has graduated more than 60 doctoral students and has authored or co-authored<br />
over 550 technical papers.
52 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
Personal <strong>in</strong>formation<br />
Name:<br />
Affiliation:<br />
Clivia M. Sotomayor Torres<br />
Catalan Institue of Nanotechnology and Catalan Institute<br />
of <strong>Research</strong> and Advanced Studies (ICREA)<br />
Telephone: +34 93 581 44 08<br />
E-mail:<br />
clivia.sotomayor.icn@uab.es<br />
Year of birth: 1955<br />
Native country: Born <strong>in</strong> Chile, citizen of the United K<strong>in</strong>gdom.<br />
Academic Degrees:<br />
BSc. (Hons.) Physics <strong>in</strong> 1979 (Southampton University, UK)<br />
Dr. Phil. <strong>in</strong> Physics <strong>in</strong> 1984 (Manchester University, UK)<br />
Employment history<br />
1983–1984 <strong>Research</strong> assistant at the University of St. Andrews (UK).<br />
1984–87 Lecturer <strong>in</strong> Physics, St. Andrews University (UK)<br />
1986–1996 Lecturer and Senior Lecturer <strong>in</strong> Electrical Eng<strong>in</strong>eer<strong>in</strong>g at the<br />
University Glasgow (UK).<br />
1996–2004 Chair of Materials Sciences <strong>in</strong> Electronics at the University of<br />
Wuppertal, Germany.<br />
2004–2008 <strong>Research</strong> Professor, University College Cork, now Tyndall<br />
National Institute.<br />
2007–date<br />
<strong>Research</strong> Professor of the Catalan Institute of <strong>Research</strong> and<br />
Advanced Studies (ICREA)<br />
Special Assignments<br />
Clivia has received three prestigious awards from the Royal Society of Ed<strong>in</strong>burgh, the<br />
Nuffield Foundation, and an Amelia Earhart Fellowship from ZONTA International (USA)<br />
<strong>in</strong> 1993, 1990 and 1982, respectively. S<strong>in</strong>ce May 2007 she holds a <strong>Research</strong> Professorship<br />
awarded by the Catalan Institute of <strong>Research</strong> and Advanced Studies (ICREA)<br />
and is us<strong>in</strong>g it at the Catalan Institute of Nanotechnology ICN (www.nanocat.org). She<br />
is the author of over 350 scientific publications and has edited six books, the latest<br />
one entitled “Alternative Lithography: unleash<strong>in</strong>g the power of Nanotechnology” (Kluwer/Academic<br />
and Plenum/Publishers, New York, 2003). She has participated and<br />
participates <strong>in</strong> several EU projects, among them NaPa, PhOREMOST of FP6. Among the<br />
<strong>in</strong>ternational assignments she is member of the Panel of Expert advis<strong>in</strong>g the French<br />
Agency of <strong>Research</strong> on the six national nanoscience and nanotechnology facilities <strong>in</strong><br />
France. She has acted as member of the programme committee of CLEO, MNE, Si-Nanoelectronics<br />
Workshop, Electronic Materials conference, and several other <strong>in</strong>ternational<br />
cnferences.<br />
Scientific Activities and Interests<br />
In Spa<strong>in</strong> Clivia is sett<strong>in</strong>g up the group Phononic and Photonic Nanostructures to <strong>in</strong>vestigate<br />
phonons <strong>in</strong> low dimensional systems, develop nanofabrication methods for 3D<br />
structur<strong>in</strong>g and carry out research <strong>in</strong> dispersion eng<strong>in</strong>eer<strong>in</strong>g.
Appendix<br />
53<br />
Personal <strong>in</strong>formation<br />
Name:<br />
Affiliation:<br />
Franz-Josef Tegude<br />
University of Duisburg-Essen, Faculty of Eng<strong>in</strong>eer<strong>in</strong>g<br />
Sciences, Center for Semiconductors and Optoelectronics<br />
Telephone: +49 203 379 33 91<br />
E-mail:<br />
franz.tegude@uni-due.de<br />
Year of birth: 1950<br />
Native country: Germany<br />
Academic Degrees:<br />
Prof. Dr. rer. nat.<br />
Employment history<br />
Franz-Josef Tegude received the diploma degree <strong>in</strong> physics from the Westfälische<br />
Wilhelms Universität, Münster, <strong>in</strong> 1977, and doctoral degree <strong>in</strong> Electronic Eng<strong>in</strong>eer<strong>in</strong>g<br />
from University of Duisburg <strong>in</strong> 1983. In 1983 he jo<strong>in</strong>ed the Alcatel-SEL research<br />
center, Stuttgart, where he headed the OEIC group and, later on, the department for<br />
characterization of optoelectronic materials and devices. S<strong>in</strong>ce 1990 he is full professor<br />
for Electrical and Electronic Eng<strong>in</strong>eer<strong>in</strong>g at Duisburg University, and head of the<br />
Solid State Electronics Department.<br />
Special Assignments<br />
Dean Electrical and Electronics Eng<strong>in</strong>eer<strong>in</strong>g (1996–1998)<br />
IEEE-EDS Chapter Chair (1998–2005)<br />
Member of the German <strong>Research</strong> Foundation Review Board (s<strong>in</strong>ce 2008)<br />
Member of InP and Related Materials Steer<strong>in</strong>g Committee<br />
Member of German Physical Society (DPG), the German Society of Information<br />
Technology (VDE, ITG) and the Institute of Electrical and Electronics Eng<strong>in</strong>eers (IEEE)<br />
Scientific Activities and Interests<br />
Electronic, optoelectronic and nanoelectronic materials, devices and circuits based<br />
on III-V semiconductors.
54 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />
Appendix 7. Abbreviations and acronyms<br />
ACREO<br />
A/D<br />
AFM<br />
CMOS<br />
D/A<br />
DATE<br />
DSP<br />
DVB-H<br />
100GBE<br />
HEMT<br />
LAN<br />
LDMOS<br />
LED<br />
LNA<br />
MBE<br />
MC2<br />
MEMS<br />
MIMO<br />
MMIC<br />
MOCVD<br />
MOS<br />
MyFab<br />
NEMS<br />
OFDM<br />
RF<br />
RFIC<br />
SOC<br />
SOI<br />
TCAD<br />
TEM<br />
VCO<br />
VCSEL<br />
VLSI<br />
<strong>Research</strong> Institute <strong>in</strong> Information Technology<br />
Analog Digital Converter<br />
Atomic Force Microscope<br />
Complementary MOS<br />
Digital Analog Converter<br />
Conference <strong>in</strong> Design, Automation and Test <strong>in</strong> Europe<br />
Digital Signal Processor<br />
Digital Video Broadcast<strong>in</strong>g - Handheld<br />
100-Gigabit Ethernet<br />
High Electron Mobility Transistor<br />
Local Area Network<br />
Lateral Double-Diffused MOS<br />
Light Emitt<strong>in</strong>g Diode<br />
Low Noise Amplifier<br />
Molecular Beam Epitaxy<br />
Department for Micro Technology and Nano Science, Chalmers<br />
Microelectromechanical Systems<br />
The use of multiple antennas at both the transmitter and the receiver<br />
Monolithic Microwave Integrated Circuit<br />
Metal-Organic Chemical Vapour Deposition<br />
Metal Oxide Semiconductor<br />
The <strong>Swedish</strong> Micro and Nano Fabrication Network<br />
Nanoelectromechanical Devices<br />
Orthogonal Frequency-Division Multiplex<strong>in</strong>g<br />
Radio Frequency<br />
Radio Frequency Integrated Circuit<br />
System-on-Chip<br />
Silicon-on-Insulator<br />
Technology Computer Aided Design<br />
Transmission Electron Microscope<br />
Voltage-Controlled Oscillator<br />
Vertical Cavity Surface Emitt<strong>in</strong>g Laser<br />
Very Large Scale Integration
55<br />
T H E S W E D I S H F O U N D AT I O N F O R S T R AT E G I C R E S E A R C H<br />
n supports research and graduate tra<strong>in</strong><strong>in</strong>g <strong>in</strong> the natural sciences,<br />
eng<strong>in</strong>eer<strong>in</strong>g and medic<strong>in</strong>e for the purpose of strenghten<strong>in</strong>g Sweden’s<br />
future competitiveness<br />
n f<strong>in</strong>ances a large number of research projects at <strong>Swedish</strong> universities<br />
- many of them <strong>in</strong> collaboration with <strong>in</strong>dustry<br />
n awards <strong>in</strong>dividual grants to particularly prom<strong>in</strong>ent researchers<br />
n supports important areas such as biotechnology, materials development,<br />
microelectronics, <strong>in</strong>formation technology and product realisation<br />
n has a total annual payment volume of SEK 600 million<br />
n has a capital of about SEK 10 billion (January 2008) as the basis<br />
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P.O. Box 70483, SE-107 26 Stockholm, Sweden Visit<strong>in</strong>g address: Kungsbron 1, G7<br />
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