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S w e d i s h F o u n d at i o n f o r s t r at e g i c r e s e a r c h<br />

<br />

<strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

- an evaluation 2008<br />

Conducted by<br />

the <strong>Swedish</strong> Foundation for Strategic <strong>Research</strong> - SSF<br />

the <strong>Swedish</strong> Governmental Agency for Innovation Systems - VINNOVA<br />

and the <strong>Swedish</strong> <strong>Research</strong> Council - VR<br />

SSF-rapport nr 2 • ISSN 1654-9872 • ISBN 978-91-89206-41-0


International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

Graphic production: Hans Melcherson, Tryckfaktorn AB<br />

Pr<strong>in</strong>ted by: Alfa pr<strong>in</strong>t AB, 2008


International Evaluation<br />

of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong><br />

<strong>Microelectronics</strong>


International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong>


Contents<br />

1 Introduction 7<br />

2 Evaluation 11<br />

3 The Evaluation Panel’s Recommendations and Comments 13<br />

4 Summary of Assessments 15<br />

5 Assessments of <strong>Research</strong> Areas 17<br />

Appendix 1: List of evaluated project leaders and rapporteurs 29<br />

Appendix 2: Outl<strong>in</strong>e of Background Report 32<br />

Appendix 3: Executive summaries 33<br />

Appendix 4: Assessment criteria 40<br />

Appendix 5: F<strong>in</strong>ancial support from VR, SSF and VINNOVA (2003-2007) 41<br />

Appendix 6: Background of experts 47<br />

Appendix 7: Abbreviations and acronyms 54


International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong>


Introduction<br />

<br />

1 Introduction<br />

In early 2007, the <strong>Swedish</strong> Foundation<br />

for Strategic <strong>Research</strong> (SSF) proposed<br />

conduct<strong>in</strong>g an evaluation of <strong>Swedish</strong> academic<br />

research <strong>in</strong> microelectronics,<br />

<strong>in</strong>clud<strong>in</strong>g photonics and relevant nanoand<br />

materials science-related projects<br />

and programmes, jo<strong>in</strong>tly together with<br />

the <strong>Swedish</strong> <strong>Research</strong> Council (VR) and<br />

the <strong>Swedish</strong> Governmental Agency for<br />

Innovation Systems (VINNOVA) – the<br />

first comprehensive evaluation of this<br />

research field <strong>in</strong> Sweden. It was decided<br />

that the evaluation should <strong>in</strong>clude<br />

research activities conducted at a<br />

<strong>Swedish</strong> <strong>in</strong>stitution of higher education<br />

from 2003 to 2007. Applied research<br />

and contract research which is ma<strong>in</strong>ly<br />

carried out at research <strong>in</strong>stitutes and<br />

generally not part of the funded programmes<br />

with<strong>in</strong> the three above mentioned<br />

organisations were not considered<br />

to be <strong>in</strong>cluded <strong>in</strong> the present<br />

evaluation.<br />

The three fund<strong>in</strong>g bodies agreed <strong>in</strong><br />

May 2007 to appo<strong>in</strong>t a panel of prom<strong>in</strong>ent<br />

<strong>in</strong>ternational experts with the capacity<br />

to assess the research activities<br />

under evaluation <strong>in</strong> an <strong>in</strong>ternational perspective<br />

without be<strong>in</strong>g <strong>in</strong>fluenced by<br />

considerations at a national level. The<br />

appo<strong>in</strong>ted Panel members were:<br />

Professor Bob Brodersen, University of<br />

California, Berkeley, USA<br />

Professor Stephen Forrest 1 University of<br />

Michigan, USA<br />

Professor Qiut<strong>in</strong>g Huang, ETH, Zurich,<br />

Switzerland<br />

Professor Mikko Paalanen, Hels<strong>in</strong>ki<br />

University of Technology, F<strong>in</strong>land<br />

Professor Klaus Petermann, Technical<br />

University, Berl<strong>in</strong>, Germany<br />

1<br />

Shortly before the Panel started their work, Professor<br />

Stephen Forrest <strong>in</strong>formed the organisers<br />

that due to unexpected circumstances he was unable<br />

to participate <strong>in</strong> the evaluation. To compensate<br />

for the absence of Professor Forrest two remote<br />

evaluators, Professor Markus V. Pessa<br />

(Tampere University of Technology, F<strong>in</strong>land) and<br />

Professor Palle Jeppesen (Technical University of<br />

Denmark), were therefore appo<strong>in</strong>ted.<br />

Professor Krishna Saraswat, Stanford<br />

University, USA<br />

Professor Clivia Sotomayor Torres,<br />

The Catalan Institute of <strong>Research</strong><br />

and Advanced Studies, Barcelona,<br />

Spa<strong>in</strong><br />

Professor Franz Tegude, University of<br />

Duisburg-Essen, Germany<br />

Professor Ingemar Lundström, L<strong>in</strong>köp<strong>in</strong>g<br />

University, was appo<strong>in</strong>ted to chair the<br />

Panel but was not actively <strong>in</strong>volved <strong>in</strong><br />

the evaluation.<br />

The present document reports the<br />

f<strong>in</strong>d<strong>in</strong>gs and recommendations of the<br />

evaluation Panel. The outl<strong>in</strong>e of the report<br />

is as follows: the next chapter provides<br />

details about the purpose of the<br />

evaluation and the evaluation procedure.<br />

The Panel’s general recommendations<br />

and comments are listed <strong>in</strong> chapter<br />

3. Chapter 4 gives a summary of the<br />

assessments made by the Panel. F<strong>in</strong>ally,<br />

chapter 5 conta<strong>in</strong>s detailed assessments<br />

and specific recommendations<br />

Panel members, from left: Klaus Petermann, Mikko Paalanen, Bob Brodersen, Clivia Sotomayor Torres, Franz Tegude, Qiut<strong>in</strong>g Huang and Krishna Saraswat.


International Evaluation of of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

on the evaluated research areas and<br />

entities. The first draft of the evaluation<br />

report was produced while the Panel<br />

was assembled <strong>in</strong> Stockholm. The text<br />

has s<strong>in</strong>ce only been subject to m<strong>in</strong>or<br />

edit<strong>in</strong>g and therefore reflects the orig<strong>in</strong>al<br />

text written by the evaluation Panel<br />

The plann<strong>in</strong>g and organisation of the<br />

entire evaluation process and preparation<br />

of the outl<strong>in</strong>e for the f<strong>in</strong>al report<br />

was carried out by a jo<strong>in</strong>t committee<br />

which consisted of David Edvardsson<br />

and Jonas Björck (VR), Sven-Ingmar<br />

Ragnarsson (VINNOVA) and Anders<br />

Sjölund (SSF).<br />

On behalf of the three fund<strong>in</strong>g bodies<br />

the undersigned hereby express our<br />

deepest gratitude to the participat<strong>in</strong>g<br />

researchers, to the expert Panel for<br />

conduct<strong>in</strong>g the evaluation and also for<br />

its support <strong>in</strong> the preparatory stages of<br />

the project, and to the local organis<strong>in</strong>g<br />

committee.<br />

Stockholm, May 2008<br />

Lars Rask Arne Johansson Jonas Wallberg<br />

<strong>Swedish</strong> Foundation for <strong>Swedish</strong> <strong>Research</strong> Council VINNOVA<br />

Strategic <strong>Research</strong><br />

Natural and Eng<strong>in</strong>eer<strong>in</strong>g Sciences


Introduction<br />

<br />

To<br />

The <strong>Swedish</strong> Foundation for Strategic <strong>Research</strong>,<br />

The <strong>Swedish</strong> Governmental Agency for Innovation Systems and<br />

The <strong>Swedish</strong> <strong>Research</strong> Council<br />

At the request of the above-mentioned organisations, we have evaluated the <strong>Swedish</strong> research <strong>in</strong> <strong>Microelectronics</strong>.<br />

We take full responsibility for the scientific judgements and the recommendations given <strong>in</strong> the report.<br />

Stockholm, April 2008<br />

Prof. Bob Brodersen Prof. Qiut<strong>in</strong>g Huang Prof. Mikko Paalanen Prof. Klaus Petermann<br />

Prof. Krishna Saraswat Prof. Clivia Sotomayor Torres Prof. Franz Tegude


10 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong>


Evaluation<br />

11<br />

2 Evaluation<br />

2.1 Purpose of the Evaluation<br />

The ma<strong>in</strong> purposes of the evaluation<br />

were to <strong>in</strong>form VR, VINNOVA and SSF<br />

about the quality of <strong>Swedish</strong> microelectronics<br />

research as seen <strong>in</strong> an <strong>in</strong>ternational<br />

perspective, to provide an overall<br />

picture of <strong>Swedish</strong> research <strong>in</strong> microelectronics,<br />

and to provide recommendations<br />

for future research fund<strong>in</strong>g programmes.<br />

Specifically, the three fund<strong>in</strong>g<br />

bodies expected advice from the expert<br />

Panel regard<strong>in</strong>g:<br />

• the absolute scientific level and <strong>in</strong>dustrial<br />

relevance of <strong>Swedish</strong> academic<br />

research <strong>in</strong> microelectronics<br />

• which subareas with<strong>in</strong> microelectronics<br />

are particularly weak or<br />

strong <strong>in</strong> an <strong>in</strong>ternational perspective<br />

or of high or low <strong>in</strong>dustrial relevance<br />

• the scientific level of different research<br />

environments<br />

• perceived problems and general observations<br />

regard<strong>in</strong>g the <strong>Swedish</strong><br />

microelectronic research system<br />

and recommendations on what<br />

steps should be taken to improve<br />

this system.<br />

The organis<strong>in</strong>g partners recognise that<br />

it is not an easy task to do a simultaneous<br />

evaluation of bottom-up basic research<br />

conducted under VR auspices<br />

and of large research programmes supported<br />

by VINNOVA or SSF. Although<br />

SSF, VR and VINNOVA together represent<br />

the ma<strong>in</strong> <strong>Swedish</strong> public fund<strong>in</strong>g<br />

bodies for research <strong>in</strong> microelectronics,<br />

they have different central roles. VR is<br />

responsible for fund<strong>in</strong>g and develop<strong>in</strong>g<br />

basic research <strong>in</strong> all academic discipl<strong>in</strong>es<br />

with an emphasis on achiev<strong>in</strong>g<br />

the highest scientific quality and br<strong>in</strong>g<strong>in</strong>g<br />

about development and renewal.<br />

SSF f<strong>in</strong>ances basic research as well as<br />

applied research, provided the research<br />

activities are of excellent scientific quality,<br />

while at the same time contribut<strong>in</strong>g<br />

to the enhancement of Sweden’s longterm<br />

competitiveness. VINNOVA’s particular<br />

sphere of responsibility is needsoriented<br />

research l<strong>in</strong>ked to the ma<strong>in</strong><br />

<strong>in</strong>dustrial sectors, normally co-funded<br />

by <strong>in</strong>dustry, and the development of the<br />

<strong>Swedish</strong> <strong>in</strong>novation system. VINNOVA<br />

judges project proposals both by expected<br />

contribution to economic growth<br />

and by scientific quality.<br />

The above-mentioned differences<br />

are often reflected <strong>in</strong> how evaluations of<br />

funded research activities are normally<br />

performed with<strong>in</strong> each fund<strong>in</strong>g organisation.<br />

The <strong>Swedish</strong> <strong>Research</strong> Council and<br />

its predecessors have a tradition of<br />

conduct<strong>in</strong>g evaluations of entire scientific<br />

fields. By contrast, VINNOVA and<br />

SSF ma<strong>in</strong>ly conduct evaluations at the<br />

programme level primarily of specific efforts<br />

such as VINNOVA’s Competence<br />

Centres and SSF’s comprehensive programmes<br />

and Strategic <strong>Research</strong> Centres.<br />

S<strong>in</strong>ce several research groups <strong>in</strong><br />

the field of microelectronics obta<strong>in</strong><br />

fund<strong>in</strong>g from at least two, and sometimes<br />

all three bodies, apart from other<br />

more scattered national sources and<br />

from <strong>in</strong>ternational sources, the types of<br />

grants and the level of f<strong>in</strong>anc<strong>in</strong>g differ<br />

significantly and make the picture of <strong>in</strong>dividual<br />

project leaders (pr<strong>in</strong>cipal <strong>in</strong>vestigators)<br />

quite complex. It was therefore<br />

thought that a comprehensive evaluation<br />

of the field of microelectronics,<br />

rather than an evaluation of <strong>in</strong>dividual<br />

project leaders, would result <strong>in</strong> a better<br />

overall view.<br />

2.2 Evaluation Process<br />

Each research project or research programme<br />

supported by VR, VINNOVA and<br />

SSF has a pr<strong>in</strong>cipal project leader with<br />

overall responsibility for the project or<br />

the programme. For the purpose of the<br />

present evaluation, the selection of<br />

which project leaders to <strong>in</strong>clude was<br />

based on fulfilment of the two follow<strong>in</strong>g<br />

criteria:<br />

• Project leaders should have received<br />

grants from one or more of the fund<strong>in</strong>g<br />

bodies (the total sum should be<br />

at least SEK 1 million) for research<br />

conducted dur<strong>in</strong>g the period 2003<br />

to 2007.<br />

• The year of first payment had to be<br />

no later than 2005.<br />

Based on these criteria, 111 project<br />

leaders were identified for <strong>in</strong>clusion <strong>in</strong><br />

the evaluation. They are listed <strong>in</strong> Appendix<br />

1.<br />

Subsequently, 24 report<strong>in</strong>g entities<br />

were def<strong>in</strong>ed. The report<strong>in</strong>g entities comprised<br />

one or several researchers work<strong>in</strong>g<br />

with similar research topics. Each report<strong>in</strong>g<br />

entity had a rapporteur<br />

responsible for submitt<strong>in</strong>g a background<br />

report (see Appendix 2 for an outl<strong>in</strong>e of<br />

the background reports) of his/her entity<br />

<strong>in</strong>clud<strong>in</strong>g, an executive summary (Appendix<br />

3) and reports from each project<br />

leader <strong>in</strong> the respective entity.


12<br />

International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

In order to further facilitate the evaluation<br />

of the field of microelectronics,<br />

six research sub-areas were identified<br />

by the three fund<strong>in</strong>g bodies and each<br />

report<strong>in</strong>g entity was assigned to one of<br />

these areas. These sub-areas were:<br />

• Silicon and Wide Bandgap Components<br />

• High Speed Electronics<br />

• Nanoelectronics<br />

• Organic Electronics<br />

• Photonics<br />

• System Design<br />

The selected project leaders received a<br />

first letter of <strong>in</strong>vitation <strong>in</strong> June 2007<br />

with <strong>in</strong>formation on the evaluation and<br />

the <strong>in</strong>clusion criteria and a brief description<br />

of the evaluation process. At about<br />

the same time, the expert Panel received<br />

detailed guidel<strong>in</strong>es for the evaluation<br />

procedure. It was stressed at an<br />

early stage that the evaluation should<br />

focus on research <strong>in</strong> the six different<br />

sub-areas with comments on <strong>in</strong>dividual<br />

report<strong>in</strong>g entities rather than on <strong>in</strong>dividual<br />

project leaders.<br />

The actual evaluation was based on<br />

the background material provided by<br />

the rapporteur and project leaders and<br />

<strong>in</strong>formation gathered at a hear<strong>in</strong>g dur<strong>in</strong>g<br />

the Panel’s visit to Sweden. The<br />

background reports were collected us<strong>in</strong>g<br />

a web-based system dur<strong>in</strong>g the period<br />

December 2007 to March 2008.<br />

Prior to the assembly of the Panel <strong>in</strong><br />

Stockholm, the evaluators were given<br />

access to the background reports us<strong>in</strong>g<br />

the web-based system and provided<br />

prelim<strong>in</strong>ary assessments of the report<strong>in</strong>g<br />

entities. These prelim<strong>in</strong>ary assessments<br />

and comments served as work<strong>in</strong>g<br />

material and provided <strong>in</strong>itial <strong>in</strong>put<br />

for the evaluation. To distribute the<br />

work among the members of the Panel,<br />

one member of the Panel was appo<strong>in</strong>ted<br />

as the ma<strong>in</strong> reviewer and another<br />

member as the second reviewer for one<br />

specific research sub-area. The ma<strong>in</strong><br />

reviewer was responsible for writ<strong>in</strong>g and<br />

summaris<strong>in</strong>g the assessments made by<br />

the whole Panel of the research with<strong>in</strong><br />

the sub-area.<br />

Individual rapporteurs and project<br />

leaders were <strong>in</strong>vited to the Panel hear<strong>in</strong>g<br />

at the <strong>Swedish</strong> <strong>Research</strong> Council between<br />

April 7 and 11, 2008. S<strong>in</strong>ce the<br />

evaluation focused on research with<strong>in</strong><br />

the different report<strong>in</strong>g entities and subareas<br />

rather than on <strong>in</strong>dividual project<br />

leaders, only a limited number of persons<br />

were <strong>in</strong>vited to the hear<strong>in</strong>gs. For<br />

the same reason, it was not considered<br />

feasible to conduct site visits. Each rapporteur<br />

was allowed to <strong>in</strong>vite one to<br />

three additional project leaders to the<br />

hear<strong>in</strong>gs depend<strong>in</strong>g on the size of the<br />

report<strong>in</strong>g entity. Dur<strong>in</strong>g the hear<strong>in</strong>g,<br />

each rapporteur was given 10 m<strong>in</strong>utes<br />

to present an overview of the research<br />

under his/her report<strong>in</strong>g entity. The Panel<br />

then decided on how to use the rema<strong>in</strong><strong>in</strong>g<br />

35 m<strong>in</strong>utes allocated for each<br />

session. Apart from the presentations<br />

and direct questions to rapporteurs and<br />

project leaders, all sessions <strong>in</strong>cluded<br />

general discussions of the <strong>Swedish</strong> research<br />

system, area(s) concerned <strong>in</strong> order<br />

to identify future needs <strong>in</strong>, and opportunities<br />

for <strong>Swedish</strong> research <strong>in</strong><br />

microelectronics.<br />

<strong>Research</strong> activities were evaluated<br />

with regard to their scientific quality <strong>in</strong><br />

an <strong>in</strong>ternational context and their strategic<br />

relevance for Sweden’s long-term<br />

competiveness. Scientific quality was<br />

judged accord<strong>in</strong>g to a five-po<strong>in</strong>t scale<br />

and relevance accord<strong>in</strong>g to a four-po<strong>in</strong>t<br />

scale (Appendix 4).


The Evaluation Panel’s Recommendations and Comments<br />

13<br />

3 The Evaluation Panel’s<br />

Recommendations and<br />

Comments<br />

3.1 Program structure<br />

The <strong>Swedish</strong> microelectronics research<br />

is funded by all three agencies. However,<br />

one of the fund<strong>in</strong>g agencies, SSF,<br />

is presently cover<strong>in</strong>g a large portion of<br />

the research budgets <strong>in</strong> this area. This<br />

is an unbalanced situation and it is the<br />

op<strong>in</strong>ion of the Panel that this should be<br />

changed. The Panel recommends jo<strong>in</strong>t<br />

or coord<strong>in</strong>ated calls for the three fund<strong>in</strong>g<br />

agencies. The calls should cover the<br />

full spectrum of microelectronics studies<br />

from materials, components and circuits<br />

to simulations and software research.<br />

The calls should be open to<br />

both s<strong>in</strong>gle- and multi-discipl<strong>in</strong>e project<br />

proposals. The selection criteria should<br />

<strong>in</strong>clude both scientific excellence and<br />

strategic relevance.<br />

Thematic calls for research proposals<br />

over well-def<strong>in</strong>ed periods of time are<br />

very useful for sett<strong>in</strong>g strategic directions<br />

for <strong>Swedish</strong> research and focus<strong>in</strong>g<br />

resources on acknowledged areas of<br />

importance. These calls should, however,<br />

be complemented by grants that<br />

can be awarded <strong>in</strong> response to fresh<br />

and <strong>in</strong>novative ideas spontaneously. It<br />

is the op<strong>in</strong>ion of the Panel that it should<br />

be possible for researchers with excit<strong>in</strong>g<br />

ideas outside the established wisdom<br />

to formulate a white paper and<br />

submit it to one of the fund<strong>in</strong>g agencies<br />

without hav<strong>in</strong>g to fit to a predef<strong>in</strong>ed call<br />

<strong>in</strong> terms of tim<strong>in</strong>g and theme. Such a<br />

regular fund at the agencies’ discretion<br />

may encourage <strong>in</strong>novation and nurture<br />

unexpected breakthroughs.<br />

The Panel regards the present def<strong>in</strong>ition<br />

of microelectronics research as<br />

too broad <strong>in</strong> Sweden. The present def<strong>in</strong>ition<br />

makes it difficult to make fund<strong>in</strong>g<br />

decision with<strong>in</strong> the same program.<br />

When nanoscience matures and relevance<br />

becomes more important <strong>in</strong> fund<strong>in</strong>g<br />

decisions, one should separate the<br />

research projects with medium- and<br />

long-term relevance <strong>in</strong>to different fund<strong>in</strong>g<br />

programs. In case of nanoelectronics,<br />

this means keep<strong>in</strong>g the projects<br />

aim<strong>in</strong>g towards hybrid technologies<br />

with<strong>in</strong> microelectronics and transferr<strong>in</strong>g<br />

projects with long-term relevance <strong>in</strong>to<br />

the basket of basic science projects.<br />

The Panel found that there is a quite<br />

large cultural gap between academic and<br />

<strong>in</strong>dustrial research groups. ACREO was<br />

seen as an excellent example to facilitate<br />

and ensure technology transfer.<br />

The Panel would like to encourage<br />

<strong>in</strong>terdiscipl<strong>in</strong>ary teams of researchers<br />

from science and eng<strong>in</strong>eer<strong>in</strong>g. This is to<br />

facilitate relevant research and because<br />

<strong>in</strong>dividual researchers may not be capable<br />

of realiz<strong>in</strong>g all the boundary conditions<br />

for mov<strong>in</strong>g basic ideas up the<br />

cha<strong>in</strong> for fruition. Increas<strong>in</strong>gly it is seen<br />

<strong>in</strong>ternationally that the best results <strong>in</strong><br />

research result<strong>in</strong>g <strong>in</strong> <strong>in</strong>dustrial applications<br />

are achieved by <strong>in</strong>terdiscipl<strong>in</strong>ary<br />

teams compris<strong>in</strong>g of researchers from<br />

diverse areas.<br />

S<strong>in</strong>ce advanced semiconductor<br />

manufactur<strong>in</strong>g is no longer present <strong>in</strong><br />

Sweden it is particularly important that<br />

access to state-of-the-art silicon CMOS<br />

(see Appendix 7 for a list of abbreviations<br />

and acronyms) technology is available<br />

to researchers <strong>in</strong>volved <strong>in</strong> system<br />

design. This is be<strong>in</strong>g accomplished now<br />

through foundry access be<strong>in</strong>g made<br />

available through Europractice and Circuits<br />

Multi-Projets. The cost of this will<br />

<strong>in</strong>crease <strong>in</strong> the future, so it will become<br />

an <strong>in</strong>creas<strong>in</strong>g limit on the research if<br />

separate fund<strong>in</strong>g is not made.<br />

3.2 Human resources<br />

The Panel noticed that there is an under-representation<br />

of women scientists<br />

and eng<strong>in</strong>eers <strong>in</strong> <strong>Swedish</strong> microelectronics<br />

and the op<strong>in</strong>ion of the Panel is<br />

that this constitutes an untapped pool<br />

of expertise.<br />

Senior staff (professors) should<br />

have personal salary of at least 75%<br />

paid by their <strong>in</strong>stitutions. Many professors<br />

are expected to externally fund a<br />

large proportion of their salaries which<br />

severely reduces competitiveness and<br />

drives the faculty towards potential conflict<br />

of <strong>in</strong>terest as they must cont<strong>in</strong>ually<br />

be concerned with provid<strong>in</strong>g their own<br />

salary. Also, if salaries are paid by the<br />

<strong>in</strong>stitutions, then sabbaticals will be<br />

possible which would have substantial<br />

benefit to expand<strong>in</strong>g the exposure of<br />

faculty to outside research. If this salary<br />

proposal is not possible, then at<br />

least overhead should not be charged<br />

aga<strong>in</strong>st the salary that the faculty rais-


14 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

es. This overhead policy <strong>in</strong> effect results<br />

<strong>in</strong> a double penalty (requir<strong>in</strong>g the<br />

faculty to raise most of their own salary,<br />

as well as pay<strong>in</strong>g overhead on it) that<br />

faculty <strong>in</strong> most other countries do not<br />

<strong>in</strong>cur.<br />

It was noticed by the Panel that a<br />

large proportion of academics were <strong>in</strong>ternally<br />

promoted to positions <strong>in</strong> microelectronics<br />

at their own University. The<br />

Panel suggests that consideration is<br />

given to encourage external appo<strong>in</strong>tments.<br />

Based on the current age distribution<br />

with few young team leaders, a potential<br />

gap <strong>in</strong> the number of academic<br />

leaders <strong>in</strong> microelectronics could arise.<br />

The growth of researcher positions<br />

takes place through fund<strong>in</strong>g of research<br />

grants, de facto allow<strong>in</strong>g the research<br />

agencies to <strong>in</strong>fluence appo<strong>in</strong>tments and<br />

academic population dynamics <strong>in</strong> universities.<br />

Faculty levels and their research<br />

area distribution should be determ<strong>in</strong>ed<br />

by the ability of universities to<br />

fund positions and by a carefully considered<br />

plan to develop the appropriate<br />

strategic and scientific relevance.<br />

3.3 Infrastructure and equipment<br />

The Panel found that the <strong>in</strong>frastructure<br />

is <strong>in</strong> general well supported (mostly<br />

from the Wallenberg foundation). Centres<br />

already established are work<strong>in</strong>g<br />

very well support<strong>in</strong>g and collaborat<strong>in</strong>g<br />

with each other. There seems to be a<br />

sufficient number of clean rooms for microelectronics<br />

related research, which<br />

will nevertheless benefit from be<strong>in</strong>g<br />

l<strong>in</strong>ked up <strong>in</strong> a national network. The<br />

Panel notes that efforts such as MyFab<br />

are steps <strong>in</strong> the right direction. This network<br />

could <strong>in</strong>clude the clean rooms of<br />

Lund, L<strong>in</strong>köp<strong>in</strong>g and KTH/ Stockholm<br />

University. The support of Myfab and<br />

ma<strong>in</strong>tenance of other labs must be <strong>in</strong>creased<br />

by the agencies. Future systems<br />

will be built with scaled device<br />

and heterogeneous <strong>in</strong>tegration of other<br />

materials on silicon. Because of the basic<br />

nature of these devices the system<br />

performance will be <strong>in</strong>creas<strong>in</strong>gly dependent<br />

on their properties. It will become<br />

<strong>in</strong>creas<strong>in</strong>gly more important for<br />

the system <strong>in</strong>dustries to be competitive<br />

and successful to have better understand<strong>in</strong>g<br />

of new devices, materials and<br />

technologies.<br />

3.4 Modell<strong>in</strong>g and Simulation<br />

As we cross from micro to nano-structures,<br />

the complexity of the device<br />

structures with diverse materials can<br />

not be handled by experimentation<br />

alone as there are too many daunt<strong>in</strong>g<br />

choices. There is an <strong>in</strong>creas<strong>in</strong>g need of<br />

modell<strong>in</strong>g and simulations to narrow<br />

down choices of experiments to be<br />

done. This becomes more critical for<br />

the nanostructures need<strong>in</strong>g quantum<br />

mechanical modell<strong>in</strong>g as the classical<br />

models become <strong>in</strong>adequate. Furthermore,<br />

circuit designers will require compact<br />

models of the new devices for explor<strong>in</strong>g<br />

design with these devices. The<br />

Panel did not see any evidence of the<br />

modell<strong>in</strong>g and simulation activity. This<br />

area should be strongly encouraged <strong>in</strong><br />

the future.<br />

3.5 Bus<strong>in</strong>ess education<br />

The research <strong>in</strong> microelectronics can be<br />

highly effective <strong>in</strong> sp<strong>in</strong>n<strong>in</strong>g off new start<br />

ups, e.g. as occurs <strong>in</strong> the Silicon Valley<br />

<strong>in</strong> the USA. However, for this to happen<br />

a comb<strong>in</strong>ation of excellent technical<br />

and bus<strong>in</strong>ess skills along with ample<br />

availability of venture capital is essential.<br />

The Panel noted that <strong>in</strong> Sweden<br />

this potential is hampered by the small<br />

amount of venture capital available <strong>in</strong><br />

this area and by the lack of bus<strong>in</strong>ess<br />

skills of the entrepreneurs. Tak<strong>in</strong>g clues<br />

from the Silicon Valley, courses on bus<strong>in</strong>ess<br />

and entrepreneurship should be<br />

made available to eng<strong>in</strong>eer<strong>in</strong>g and science<br />

students and availability of venture<br />

capital should be <strong>in</strong>creased by active<br />

market<strong>in</strong>g of relevant <strong>Swedish</strong><br />

research results to <strong>in</strong>vestors worldwide<br />

such as <strong>in</strong> the Silicon Valley.


Summary of Assessments<br />

15<br />

4 Summary of Assessments<br />

Based on the background reports of the<br />

rapporteurs, the Panel hear<strong>in</strong>g and the<br />

remote evaluators’ reports the Panel<br />

found <strong>Swedish</strong> academic research <strong>in</strong><br />

microelectronics to be excellent with<br />

outstand<strong>in</strong>g highlights <strong>in</strong> each of the<br />

six different subareas.<br />

4.1 Silicon and wide bandgap<br />

components<br />

The overall scientific quality for the entities<br />

evaluated <strong>in</strong> this area was found to<br />

be excellent. The relevance ranges<br />

from medium to very high. <strong>Research</strong> activities<br />

<strong>in</strong> silicon and wide bandgap<br />

components are extremely important<br />

for the success of <strong>Swedish</strong> <strong>in</strong>dustry and<br />

have to be encouraged. It is the op<strong>in</strong>ion<br />

of the Panel that it will become more<br />

important to have core competence <strong>in</strong><br />

both these research activities even <strong>in</strong><br />

pure system <strong>in</strong>dustries.<br />

For over three decades, there has<br />

been a quadrupl<strong>in</strong>g of transistor density<br />

and a doubl<strong>in</strong>g of electrical performance<br />

every 2 to 3 years. Silicon transistor technology,<br />

<strong>in</strong> particular CMOS has played a<br />

pivotal role <strong>in</strong> this and will cont<strong>in</strong>ue to do<br />

so. However, there are several technical<br />

issues that are mak<strong>in</strong>g proper device<br />

scal<strong>in</strong>g <strong>in</strong>creas<strong>in</strong>gly difficult. With the<br />

enormous <strong>in</strong>stalled base of silicon manufactur<strong>in</strong>g<br />

and design <strong>in</strong>frastructure it is<br />

highly unlikely that a totally different technology<br />

will be <strong>in</strong> mass production <strong>in</strong> the<br />

foreseeable future. Therefore, to cont<strong>in</strong>ue<br />

the progress of microelectronics, <strong>in</strong>novative<br />

silicon based device structures<br />

capable of CMOS configuration that overcome<br />

the scal<strong>in</strong>g problems, will have to<br />

replace planar bulk CMOS structures.<br />

This will require new structural, material<br />

and fabrication technology solutions that<br />

are generally compatible with current and<br />

forecasted <strong>in</strong>stalled silicon manufactur<strong>in</strong>g.<br />

Examples of novel device structures<br />

are multi gate MOS and examples of novel<br />

materials are high mobility channel materials<br />

like stra<strong>in</strong>ed silicon and germanium,<br />

high dielectric constant gate<br />

dielectrics and metal gates. The Panel<br />

believes that these new technologies will<br />

not only extend the life of Si-based electronics,<br />

but will also provide the platform<br />

for heterogeneous <strong>in</strong>tegration of other<br />

materials and devices not only for comput<strong>in</strong>g<br />

but more importantly for communications,<br />

transport, healthcare, environment,<br />

energy and many other future<br />

applications of electronics. Furthermore,<br />

advanced silicon will also provide a platform<br />

for <strong>in</strong>tegration of potentially revolutionary<br />

non-Si solutions.<br />

4.2 High speed electronics<br />

The overall scientific quality for the entities<br />

evaluated was found to be excellent<br />

whereas the impact and relevance<br />

to <strong>Swedish</strong> <strong>in</strong>dustry is very high <strong>in</strong> the<br />

largest part.<br />

The research area has a long and<br />

successful history <strong>in</strong> Sweden and had a<br />

significant <strong>in</strong>fluence on wireless and<br />

mobile communication, satellite technique,<br />

radar applications, radio astronomy,<br />

sensors and more recently THz-imag<strong>in</strong>g<br />

and related security aspects. The<br />

technology needed for realisation of the<br />

related components is heterogeneous,<br />

and therefore complex, with respect to<br />

the choice of materials, device approaches<br />

and system aspects, <strong>in</strong> contrast<br />

to the digital world which is dom<strong>in</strong>ated<br />

by CMOS technology nearly<br />

exclusively. Today Europe’s wireless <strong>in</strong>dustry<br />

has a lead<strong>in</strong>g position, but key<br />

components like power amplifiers come<br />

from outside. Yet the physical layer<br />

determ<strong>in</strong>es the system performance,<br />

so research <strong>in</strong> this area has to be heterogeneous,<br />

too. Beside CMOS, which<br />

undoubtedly plays an <strong>in</strong>creas<strong>in</strong>gly important<br />

role also for high speed electronics,<br />

III-V and SiC semiconductor and<br />

e.g. ferroelectric based technologies<br />

are important. Especially for future<br />

developments aim<strong>in</strong>g at higher frequencies<br />

and bandwidths, this mix of technologies<br />

is essential for the heterogeneous<br />

<strong>in</strong>tegration approach. This will<br />

also <strong>in</strong>clude, after carefully check<strong>in</strong>g its<br />

application relevance, nano-process<strong>in</strong>g<br />

and nano-components which are emerg<strong>in</strong>g<br />

rapidly <strong>in</strong> Sweden.<br />

4.3 Nanoelectronics<br />

The overall scientific quality of <strong>Swedish</strong><br />

nanoelectronics research was found to<br />

be excellent and the <strong>Swedish</strong> scientists<br />

work<strong>in</strong>g <strong>in</strong> this area are recognized<br />

worldwide. The research <strong>in</strong> nanoelectronics<br />

is closer to basic science than<br />

the research <strong>in</strong> other areas of this evaluation<br />

but has high long term relevance.<br />

Nanoelectronics is a relatively young<br />

research topic with high expectations. It<br />

is still expand<strong>in</strong>g and the <strong>in</strong>ternational<br />

competition is high. The <strong>Swedish</strong> research<br />

groups have been <strong>in</strong>volved <strong>in</strong> this<br />

area from the beg<strong>in</strong>n<strong>in</strong>g and managed to<br />

position themselves very well <strong>in</strong> the competition.<br />

This is demonstrated <strong>in</strong> their<br />

lead<strong>in</strong>g role <strong>in</strong> many EU-funded collaborations<br />

and <strong>in</strong> their large number of citations<br />

and high-quality publications. The


16 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

strength of the <strong>Swedish</strong> research groups<br />

is based on their wise selection of research<br />

topics, expertise <strong>in</strong> materials<br />

growth and excellent <strong>in</strong>frastructure.<br />

With <strong>in</strong>creas<strong>in</strong>g <strong>in</strong>ternational competition<br />

there are big challenges ahead.<br />

Some of the groups with<strong>in</strong> the report<strong>in</strong>g<br />

entity are under-critical <strong>in</strong> size and their<br />

future is unclear due to the retirements or<br />

transfer of personnel. In these cases it is<br />

important for the fund<strong>in</strong>g agencies and<br />

the universities to support the cont<strong>in</strong>uation<br />

of excellent research efforts. The relevance<br />

of nanoelectronics to national <strong>in</strong>dustry<br />

comes from the high number of the<br />

licentiates and PhDs educated <strong>in</strong> this<br />

area. The fund<strong>in</strong>g agencies should recognize<br />

the basic nature of nanoelectronics<br />

research and support it also via the basic<br />

science fund<strong>in</strong>g programs.<br />

4.4 Organic electronics<br />

The scientific quality for the evaluated<br />

entities was found to be excellent. The<br />

evaluated entities have clearly identified<br />

their needs for the challeng<strong>in</strong>g objectives<br />

they have set out to pursue <strong>in</strong> the future.<br />

The relevance of this field at a <strong>Swedish</strong><br />

and European level is very high.<br />

The large area of organic electronics<br />

has been selected for special support<br />

at the European level <strong>in</strong> the 7th Framework<br />

Program under the theme Information<br />

and Communication Technologies.<br />

<strong>Research</strong> <strong>in</strong> organic electronics <strong>in</strong> Sweden<br />

is therefore <strong>in</strong> l<strong>in</strong>e with European<br />

research efforts. In a national perspective,<br />

its relevance is even more profound<br />

due to the high profile national<br />

paper <strong>in</strong>dustry, the energy question and<br />

the l<strong>in</strong>k to biology.<br />

<strong>Swedish</strong> research <strong>in</strong> organic electronics<br />

should be consolidated by def<strong>in</strong><strong>in</strong>g<br />

a strategy on pr<strong>in</strong>ted electronics. A<br />

part of this could <strong>in</strong>clude concerted action<br />

with other Nordic countries, e.g.,<br />

F<strong>in</strong>land, which also has research efforts<br />

<strong>in</strong> pr<strong>in</strong>ted electronics <strong>in</strong> large scale as<br />

well as excellent research toward pr<strong>in</strong>t<strong>in</strong>g<br />

functional sub-micrometer structures.<br />

Further, the value cha<strong>in</strong> <strong>in</strong> organic<br />

electronics should be strengthened<br />

by support<strong>in</strong>g a research l<strong>in</strong>e from materials,<br />

design, characterisation of device-relevant<br />

properties, test<strong>in</strong>g laboratory-scale<br />

components, <strong>in</strong>tegration <strong>in</strong><br />

circuits and test<strong>in</strong>g of cost-efficient volume<br />

manufactur<strong>in</strong>g. This should <strong>in</strong>clude<br />

applications <strong>in</strong> ambient <strong>in</strong>telligence, energy<br />

and medical areas, all of which are<br />

<strong>in</strong>creas<strong>in</strong>g economic activities where<br />

Sweden can secure strong position if a<br />

national strategy becomes a reality.<br />

4.5 Photonics<br />

<strong>Research</strong> <strong>in</strong> this area is be<strong>in</strong>g carried<br />

out <strong>in</strong> Sweden at a very high <strong>in</strong>ternational<br />

level. On the average the research is<br />

rated as excellent and the relevance is<br />

high. <strong>Swedish</strong> researchers work<strong>in</strong>g <strong>in</strong><br />

this area are worldwide recognized.<br />

The ma<strong>in</strong> emphasis of photonics research<br />

<strong>in</strong> Sweden is related to telecommunications.<br />

This is relevant for the<br />

<strong>Swedish</strong> <strong>in</strong>dustry <strong>in</strong> particular when<br />

consider<strong>in</strong>g that Ericsson did return<br />

back to optical fibre communication systems<br />

after merg<strong>in</strong>g with Marconi. Really<br />

outstand<strong>in</strong>g research work has been<br />

conducted on ultra long haul high speed<br />

transmission systems; for future applications,<br />

however, also shorter transmission<br />

l<strong>in</strong>ks will become important. Generally<br />

speak<strong>in</strong>g the research with respect<br />

to optical fibre transmission should be<br />

strengthened <strong>in</strong> areas which are closer<br />

to application.<br />

The majority of projects are related to<br />

photonic materials and devices. This research<br />

has also a significant impact for<br />

the <strong>Swedish</strong> <strong>in</strong>dustry especially with respect<br />

to small and medium enterprises.<br />

With respect to nanophotonics it is still<br />

important to identify activities which are<br />

useful to the development of <strong>Swedish</strong><br />

<strong>in</strong>dustry. These applications may well be<br />

outside the area of telecommunications,<br />

e.g. sens<strong>in</strong>g devices for which the use of<br />

plasmonic waveguides or photonic crystals<br />

may be useful.<br />

The work on light<strong>in</strong>g, where LEDs<br />

will play a very significant role <strong>in</strong> the future,<br />

has also been important. However,<br />

the l<strong>in</strong>k between the research work and<br />

the <strong>in</strong>dustrial potential for Sweden has<br />

still to be developed.<br />

4.6 System design<br />

It is important to note that a system is<br />

only a relative term and that one def<strong>in</strong>ition<br />

of a system is that it is “the level of<br />

abstraction one above the level <strong>in</strong> which<br />

you are work<strong>in</strong>g”. S<strong>in</strong>ce the primary focus<br />

of Sweden’s microelectronic work<br />

has been <strong>in</strong> the area of device and materials<br />

research, the design and optimization<br />

of circuits has been the system<br />

level of <strong>in</strong>terest, with an effort at four<br />

universities. These system (circuit) efforts<br />

conta<strong>in</strong> some outstand<strong>in</strong>g <strong>in</strong>dividual<br />

efforts while others range down to<br />

be<strong>in</strong>g merely good, with the overall assessment<br />

of the research quality be<strong>in</strong>g<br />

rated as excellent. There is also some<br />

<strong>in</strong>consistency <strong>in</strong> this system (circuit) research<br />

with respect to the relevance to<br />

Sweden’s strategic goals, but overall it<br />

is considered high.<br />

The Panel believes that there should<br />

be a change of focus and a significant<br />

<strong>in</strong>crease <strong>in</strong> support. The change of focus<br />

<strong>in</strong>volves mov<strong>in</strong>g to the next level <strong>in</strong><br />

system design, <strong>in</strong> which the circuit<br />

block (the previous focus of the “systems”<br />

research) is just a component<br />

and addresses the realization that, over<br />

the next 10 years, the advances <strong>in</strong><br />

CMOS technology will allow complex<br />

chips that conta<strong>in</strong> over a billion device<br />

elements and therefore will <strong>in</strong> turn allow<br />

complete systems on a chip (SOC).


Assessments of <strong>Research</strong> Areas<br />

17<br />

5 Assessments of <strong>Research</strong> Areas<br />

5.1 Silicon and Wide Bandgap<br />

Components<br />

The progress <strong>in</strong> microelectronics will require<br />

new structural, material and fabrication<br />

technology solutions that are<br />

generally compatible with current and<br />

forecasted <strong>in</strong>stalled silicon manufactur<strong>in</strong>g.<br />

Examples of novel device structures<br />

are multi gate MOS and examples<br />

of novel materials are high mobility<br />

channel materials like stra<strong>in</strong>ed silicon<br />

and germanium, high dielectric constant<br />

gate dielectrics and metal gates. The<br />

Panel believes that these new technologies<br />

will not only extend the life of Sibased<br />

electronics, but will also provide<br />

the platform for heterogeneous <strong>in</strong>tegration<br />

of other materials and devices not<br />

only for comput<strong>in</strong>g but more importantly<br />

for communications, transport, healthcare,<br />

environment, energy and many<br />

other future applications of electronics.<br />

Furthermore, advanced silicon will also<br />

provide platform for <strong>in</strong>tegration of potentially<br />

revolutionary non-Si solutions.<br />

Both these activities are extremely<br />

important for the success of the <strong>in</strong>dustry.<br />

Design of future systems will have<br />

<strong>in</strong>creas<strong>in</strong>gly scaled device and heterogeneous<br />

<strong>in</strong>tegration of other materials<br />

on silicon. The system performance will<br />

be <strong>in</strong>creas<strong>in</strong>gly dependent (good or bad)<br />

on the properties of these devices and<br />

materials. It will become <strong>in</strong>creas<strong>in</strong>gly<br />

more important to have core competence<br />

<strong>in</strong> these areas even <strong>in</strong> pure system<br />

<strong>in</strong>dustries. Thus research <strong>in</strong> these<br />

areas with appropriate connections to<br />

the <strong>in</strong>dustry has to be encouraged.<br />

The entities evaluated <strong>in</strong> this area<br />

span research <strong>in</strong> both areas. The overall<br />

scientific quality by the <strong>in</strong>ternational<br />

standard is excellent and the relevance<br />

ranges from medium to very high. The<br />

KTH group is work<strong>in</strong>g on novel CMOS<br />

and related device structures, fabrication<br />

technology and materials while the<br />

other four groups are work<strong>in</strong>g on heterogeneous<br />

<strong>in</strong>tegration of other materials<br />

and devices. The work at KTH is of very<br />

high quality by <strong>in</strong>ternational standards.<br />

This type of device work is very valuable<br />

to ma<strong>in</strong>ta<strong>in</strong> excellence <strong>in</strong> the circuits<br />

and systems activity. The Uppsala<br />

group is work<strong>in</strong>g on a broad range of <strong>in</strong>dustry<br />

oriented discrete devices for a<br />

variety of electronic systems and solar<br />

cells which has very strong connections<br />

with the <strong>in</strong>dustry. The focus of the research<br />

at L<strong>in</strong>köp<strong>in</strong>g is on growth and<br />

characterization of wide bandgap semiconductors<br />

with applications to highvoltage,<br />

high-power, high-frequency devices<br />

and is well connected to the<br />

<strong>in</strong>dustry. The research <strong>in</strong> the Gallium<br />

Nitride entity is focused on experimental<br />

development of growth techniques<br />

for wide bandgap semiconductors and<br />

material properties related to electronic<br />

and optical applications. The activity <strong>in</strong><br />

the Chalmers group appears to be a collection<br />

of <strong>in</strong>dividual physics oriented<br />

projects and lacks focus.<br />

5.1.1 Comments on report<strong>in</strong>g entities<br />

Silicon <strong>Research</strong> at KTH<br />

The research carried out <strong>in</strong> this entity is<br />

application oriented eng<strong>in</strong>eer<strong>in</strong>g. It covers<br />

a broad spectrum of activities on<br />

novel fabrication processes, materials<br />

and devices with several outstand<strong>in</strong>g<br />

achievements e.g. development of sidewall<br />

transfer lithography for controled<br />

formation of nanostructures and application<br />

to several electronic and optical<br />

devices, low noise, high-k gate dielectrics<br />

for MOSFET, 1/f-noise studies, significant<br />

contributions to sub 100 nm<br />

three-dimensional structure development,<br />

Schottky barrier source/dra<strong>in</strong><br />

technology to lower parasitic resistance,<br />

simple approach for fabrication of<br />

a rectifier based on carbon nanotube<br />

(CNT) network, Si-quantum dots with<br />

outstand<strong>in</strong>g photo-lum<strong>in</strong>iscense results,<br />

SiC-bipolar transistor with world record<br />

1100 V breakdown voltage.<br />

The scientific quality of the research<br />

at KTH is excellent to outstand<strong>in</strong>g and<br />

is at the cutt<strong>in</strong>g edge of technology and<br />

the relevance is very high. The KTH<br />

group has extensive collaboration with<br />

<strong>in</strong>ternational <strong>in</strong>dustry as well as startup<br />

activities and strong activities <strong>in</strong> EU-<br />

FP6 and FP7.<br />

Silicon <strong>Research</strong> at Uppsala University<br />

Silicon research at Uppsala is application<br />

oriented work on discrete devices<br />

<strong>in</strong>volv<strong>in</strong>g synthesis of electronic materials<br />

as well as modell<strong>in</strong>g, design, fabrication<br />

and characterization of discrete<br />

electronic components on the other.<br />

The first category <strong>in</strong>cludes: th<strong>in</strong> piezoelectric<br />

films, SOI materials gate stack<br />

materials, ferroelectric materials. The<br />

second group of activities <strong>in</strong>cludes:<br />

high power, high frequency LDMOS transistors,<br />

solar cell modules, microwave<br />

electro-acoustic components such as<br />

resonators, filters, oscillators, etc, physical<br />

and biochemical electro-acoustic<br />

sensors, components on hybrid Si/SiC<br />

substrates and <strong>in</strong>tegrated antennas.<br />

The scientific quality of the work is excellent<br />

to outstand<strong>in</strong>g.


18 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

The work on one hand is scientifically<br />

oriented and of very high importance<br />

for Sweden´s long-term competiveness.<br />

There appears to be extensive<br />

collaboration with<strong>in</strong> academia and <strong>in</strong>dustry<br />

<strong>in</strong> Sweden and Europe and transfer<br />

of technology to the <strong>in</strong>dustry.<br />

Silicon Carbide <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g<br />

University<br />

The focus of the research is on growth<br />

and characterization of wide bandgap<br />

semiconductors, SiC for high-voltage<br />

and high-power, GaN, AlGaN and AlN for<br />

high-frequency devices. In particular the<br />

work on SiC epitaxial growth technique<br />

us<strong>in</strong>g chlor<strong>in</strong>e conta<strong>in</strong><strong>in</strong>g precursors<br />

and large-area uniform growth of Al-<br />

GaN/GaN HEMT structure us<strong>in</strong>g hot-wall<br />

MOCVD is noteworthy. With<strong>in</strong> the research<br />

entity they have developed new<br />

growth techniques such as chloridebased<br />

SiC growth and hot-wall MOCVD<br />

growth of III-nitrides. They have also<br />

done <strong>in</strong>vestigation of various techniques<br />

to m<strong>in</strong>imize defects. They do<br />

well focused materials research and collaborate<br />

with other groups for design,<br />

process<strong>in</strong>g and evaluation of devices.<br />

The scientific quality of the research is<br />

excellent.<br />

The process and equipment research<br />

is done often <strong>in</strong> collaboration<br />

with <strong>in</strong>dustry. The relevance is medium<br />

to high.<br />

Gallium Nitride <strong>Research</strong> L<strong>in</strong>köp<strong>in</strong>g<br />

University<br />

The research is focused on experimental<br />

development of growth techniques<br />

for wide bandgap semiconductors and<br />

material properties related to electronic<br />

and optical applications. The projects<br />

concern four categories of materials: IIInitrides,<br />

magnetic semiconductor structures,<br />

III-V nitrides and SiC. The work is<br />

strongly fundamental, physics materials<br />

based research. There appears to be a<br />

lack of device/component work. Materials<br />

covered are very important for communication,<br />

power electronics (automotive,<br />

mobile communications),<br />

illum<strong>in</strong>ation, solar energy systems etc.<br />

A stronger coupl<strong>in</strong>g to device people is<br />

needed.<br />

The entity has extensive <strong>in</strong>teraction,<br />

however, mostly with academia <strong>in</strong> Sweden,<br />

Europe, USA, Japan, Australia and<br />

Ch<strong>in</strong>a. Collaboration is ma<strong>in</strong>ly with respect<br />

to fundamental materials research.<br />

Their work has highly esteemed<br />

world lead<strong>in</strong>g position with overall excellent<br />

scientific quality. The research<br />

is of medium to high importance for<br />

Sweden´s long-term competiveness.<br />

Silicon <strong>Research</strong> at Chalmers<br />

The area of the activity is quite broad,<br />

be<strong>in</strong>g a collection of <strong>in</strong>dividual physics<br />

oriented projects without focus and connection<br />

to device community. Projects<br />

<strong>in</strong>clude thermal wafer bond<strong>in</strong>g, nanogaps<br />

for molecular attachment, carbon<br />

nanotubes for <strong>in</strong>tegration <strong>in</strong>to<br />

CMOS technology and for AFM/TEM applications,<br />

MEMS based sensors, biodetectors,<br />

quantum dots, silicon nanowires<br />

and high-k-dielectrics. Work is<br />

more development oriented and should<br />

be of more concern about the state-ofthe-art.<br />

They need closer connection<br />

with the device community. They have<br />

extensive collaboration mostly <strong>in</strong> Europe.<br />

Overall scientific quality of their work<br />

is very good to excellent. The research<br />

is of medium to high importance for<br />

Sweden´s long-term competiveness.<br />

5.2 High Speed Electronics<br />

Today Europe´s wireless <strong>in</strong>dustry has a<br />

lead<strong>in</strong>g position, but key components<br />

like power amplifiers come from outside.<br />

Yet the physical layer determ<strong>in</strong>es<br />

the system performance, so research <strong>in</strong><br />

this area has to be heterogeneous, too.<br />

Beside CMOS, which undoubtedly plays<br />

an <strong>in</strong>creas<strong>in</strong>gly important role also for<br />

high speed electronics, III-V and SiC<br />

semiconductor and e.g. ferroelectric<br />

based technologies are important. This<br />

mix of technologies is essential for a<br />

heterogeneous <strong>in</strong>tegration approach<br />

which will be necessary for future developments<br />

aim<strong>in</strong>g at higher frequencies<br />

and bandwidths. This will also <strong>in</strong>clude,<br />

after carefully check<strong>in</strong>g its application<br />

relevance, nano-process<strong>in</strong>g and nanocomponents<br />

which are emerg<strong>in</strong>g rapidly<br />

<strong>in</strong> Sweden.<br />

The High Speed Electronics research<br />

area is represented by ma<strong>in</strong>ly<br />

two groups, the Microwave Electronics<br />

Laboratory and the THz group, both<br />

from the Microtechnology and Nanoscience<br />

Department at Chalmers. Together<br />

they cover the broad frequency<br />

range from below 1 GHz to above 1 THz.<br />

The Microwave Electronics Laboratory<br />

covers the frequency range up to about<br />

250 GHz and provides the heterogeneous<br />

materials and component basis<br />

from an application oriented, eng<strong>in</strong>eer<strong>in</strong>g<br />

po<strong>in</strong>t of view, cover<strong>in</strong>g the full l<strong>in</strong>e<br />

up to modules and subsystems. They<br />

are well aware of activities <strong>in</strong> the field<br />

worldwide, <strong>in</strong>dicated by creat<strong>in</strong>g the<br />

“European Microwave Interest Group”<br />

recently. The THz group has contributed<br />

high level research <strong>in</strong> a niche, mostly<br />

space applications, but could contribute<br />

to and extend the activities <strong>in</strong> microand<br />

mm-waves of the Microwave Electronics<br />

Laboratory when coupled more<br />

strongly to them by us<strong>in</strong>g their highly <strong>in</strong>dustry<br />

relevant skills and facilities. This<br />

would be beneficial for both groups.<br />

Overall the scientific quality is excellent<br />

whereas the impact and relevance<br />

is very high <strong>in</strong> the largest part.


Assessments of <strong>Research</strong> Areas<br />

19<br />

5.2.1 Comments on report<strong>in</strong>g entities<br />

Microwaves <strong>Research</strong> at Chalmers<br />

The research focus is on electronic<br />

components, circuits and modules for<br />

applications from low GHz to THz frequencies<br />

employ<strong>in</strong>g different semiconductor<br />

technologies: InP based HEMTs,<br />

SiC, AlGaN/GaN from <strong>in</strong> house processes;<br />

and Si-CMOS from foundries. Towards<br />

module preparation also flip chip<br />

mount<strong>in</strong>g is available. Strong activities<br />

are multifunctional MMIC design for all<br />

relevant components, and full range of<br />

high frequency measurements up to<br />

325 GHz. Especially impressive is the<br />

unique and balanced mix of applied science,<br />

eng<strong>in</strong>eer<strong>in</strong>g and pilot l<strong>in</strong>e<br />

process<strong>in</strong>g, which is also open for partners<br />

from academia and <strong>in</strong>dustry, and<br />

has high significance for future developments.<br />

The eng<strong>in</strong>eer<strong>in</strong>g oriented scientific<br />

level is excellent to outstand<strong>in</strong>g. The<br />

impact and relevance of the work is<br />

very high for Sweden’s long-term competiveness<br />

because of their role to provide<br />

guidance to <strong>in</strong>dustry, for e.g. selection<br />

of fabrication processes derived<br />

from research and well educated eng<strong>in</strong>eers<br />

needed for future enabl<strong>in</strong>g technologies.<br />

This claim is really met demonstrated<br />

by the extraord<strong>in</strong>ary mix and number<br />

of <strong>in</strong>dustrial projects and collaborations.<br />

Terahertz Systems <strong>Research</strong> at<br />

Chalmers<br />

The research claim is to focus on new<br />

materials, devices and subsystems <strong>in</strong><br />

the frequency range from 10 GHz to 10<br />

THz for applications radar, THz-imag<strong>in</strong>g,<br />

radio astronomy and wireless communications.<br />

The ma<strong>in</strong> two directions are<br />

Hetero-Barrier-Varactors for high power<br />

THz sources us<strong>in</strong>g mix<strong>in</strong>g, and tuneable<br />

ferroelectric varactors for high Q resonators,<br />

which both are not really new<br />

approaches, but were developed to<br />

show excellent results. A significant<br />

part of support is from the European<br />

Space Agency, and the work therefore<br />

not driven by <strong>in</strong>dustrial needs up to<br />

now.<br />

The scientific level is very good to<br />

excellent. The research is of medium<br />

importance for Sweden´s long-term<br />

competiveness, but <strong>in</strong> a niche, only. It<br />

could be <strong>in</strong>creased significantly by tighter<br />

coupl<strong>in</strong>g with the Microwaves <strong>Research</strong><br />

Group at Chalmers.<br />

5.3 Nanoelectronics<br />

In summary, the Panel does not f<strong>in</strong>d<br />

particular weaknesses <strong>in</strong> <strong>Swedish</strong> nanoelectronics<br />

research. Its scientific level<br />

is excellent. Like <strong>in</strong> other small countries<br />

it has only medium- and long-term<br />

relevance. We recommend separat<strong>in</strong>g<br />

the medium and long term projects <strong>in</strong>to<br />

different fund<strong>in</strong>g programs.<br />

In order to analyze the strategic relevance<br />

of nanoelectronics research it<br />

can be divided <strong>in</strong>to two parts, accord<strong>in</strong>g<br />

to the method used for produc<strong>in</strong>g the<br />

nanosize components. In the traditional<br />

top-down production various lithographic<br />

methods, borrowed from the CMOS<br />

technology, are used for mak<strong>in</strong>g submicrometer<br />

devices. This part of the nanoelectronics<br />

research is CMOS-compatible,<br />

supports directly Si road map<br />

(more Moore), is mostly conducted by<br />

big semiconductor companies, and has<br />

strong short-term relevance.<br />

In the second part of nanoelectronics<br />

research other materials than silicon<br />

and are utilized to develop new bottom-up<br />

methods, such as<br />

self-assembly, to produce new types of<br />

functional nanocomponents. This part<br />

of nanoelectronics research is often<br />

<strong>in</strong>terdiscipl<strong>in</strong>ary, borrows ideas from<br />

material science, chemistry and even<br />

biology, and suits well <strong>in</strong>to the academic<br />

environment. Most of the new production<br />

methods of novel components<br />

are not CMOS-compatible and have only<br />

long-term relevance outside the silicon<br />

roadmap. Some of the materials and<br />

production methods are, however,<br />

CMOS-compatible and can be utilized <strong>in</strong><br />

hybrid nanocomponents on silicon platform<br />

(usually denoted as heterogeneous<br />

<strong>in</strong>tegration). The hybrid technology,<br />

where novel nanoelectronic components<br />

serve e.g. as sensors, is expected to<br />

have strong medium-term relevance.<br />

The <strong>in</strong>tegrated cheap sensor systems<br />

are expected to f<strong>in</strong>d a wide variety of<br />

applications <strong>in</strong> traditional <strong>in</strong>dustry (automotive)<br />

as well as <strong>in</strong> new mass markets<br />

<strong>in</strong> environmental, health care, energy<br />

and biotechnology sectors (see the<br />

strategic European research agenda<br />

ENIAC: www.eniac.eu).<br />

This evaluation of <strong>Swedish</strong> <strong>Microelectronics</strong><br />

research <strong>in</strong>cludes five university<br />

entities <strong>in</strong> the nanoelectronics<br />

basket. None of the teams are directly<br />

connected to the above mentioned first<br />

category, i.e. to silicon road map, and<br />

their research does not have any shortterm<br />

relevance. On the other hand, this<br />

is a wise decision <strong>in</strong> a small country like<br />

Sweden which does not have <strong>in</strong>tegrated<br />

circuit manufactur<strong>in</strong>g. Even <strong>in</strong> US a<br />

very limited number of universities are<br />

<strong>in</strong>volved <strong>in</strong> “more Moore” -type of research.<br />

The research programs of all the five<br />

entities <strong>in</strong>clude strong growth and/or<br />

characterization projects of novel nonsilicon<br />

materials for various nanodevice<br />

applications. All of them are supported<br />

by good <strong>in</strong>frastructure. Most of the<br />

projects have emerged from generous<br />

past <strong>in</strong>vestments <strong>in</strong> <strong>Swedish</strong> material<br />

research. The projects have medium<br />

medium-term strategic relevance for hybrid<br />

technology. The relevance of the


20 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

<strong>Swedish</strong> research effort <strong>in</strong> nanoelectronics<br />

is at least on the same level as<br />

<strong>in</strong> compatible best <strong>in</strong>ternational research<br />

programs.<br />

More than half of the research<br />

projects <strong>in</strong> the nanoelectronics basket<br />

can be characterized to be curiosity<br />

driven basic research (e.g. quantum<br />

comput<strong>in</strong>g) which has high long-term<br />

strategic relevance. Aga<strong>in</strong> the relevance<br />

of the <strong>Swedish</strong> nanoelectronics research<br />

is not lower than <strong>in</strong> similar <strong>in</strong>ternational<br />

projects.<br />

When judg<strong>in</strong>g the strategic relevance<br />

of nanoelectronics research we<br />

have to take <strong>in</strong>to account also the high<br />

number of PhDs produced by this research<br />

area. More than 50 % of the PhD<br />

students have already been hired by private<br />

enterprises. These PhDs will transfer<br />

the latest know-how from academia<br />

to <strong>in</strong>dustry.<br />

What comes to the average absolute<br />

scientific level of the <strong>Swedish</strong> nanoelectronics<br />

research, we judge it to be<br />

excellent <strong>in</strong> <strong>in</strong>ternational rank<strong>in</strong>g. The<br />

judgment is based on the high relative<br />

number of <strong>Swedish</strong> publications <strong>in</strong> high<br />

impact-factor journals (Nature, Nature<br />

Materials, Nano Letters, Physical Review<br />

Letters and Applied Physics Letters...),<br />

on the high personal citation<br />

numbers of the <strong>Swedish</strong> scientists (reflected<br />

<strong>in</strong> high h-<strong>in</strong>dex), and on the demonstrated<br />

<strong>in</strong>ternational leadership of<br />

some of the research teams (organization<br />

of ma<strong>in</strong> topical conferences, <strong>in</strong>vitations<br />

to speak at ma<strong>in</strong> conferences of<br />

the field etc).<br />

5.3.1 Comments on report<strong>in</strong>g entities<br />

Nanotubes <strong>Research</strong> at Chalmers<br />

The CNT research at Chalmers is a relatively<br />

young effort built around strong<br />

expertise on growth, characterization<br />

and theoretical understand<strong>in</strong>g of carbon<br />

nanotubes. The leader of the team is an<br />

<strong>in</strong>ternationally well-known scientist and<br />

an excellent manager of scientific<br />

projects. The other team members are<br />

highly qualified senior scientists, especially<br />

<strong>in</strong> the area of theoretical condensed<br />

matter physics.<br />

The CNT research is very competitive<br />

at the moment. With well selected<br />

research topics and narrow enough focus<br />

the Chalmers team has ma<strong>in</strong>ta<strong>in</strong>ed<br />

the critical size to make a real impact<br />

on this highly contested research area.<br />

The quantity and quality of the scientific<br />

output of the team has been very high.<br />

The 9 Physical Review Letters, 11 Applied<br />

Physical Letters and 4 Nano Letters<br />

prove the orig<strong>in</strong>ality of its research.<br />

Tak<strong>in</strong>g <strong>in</strong>to account the used resources<br />

and person-years the scientific impact<br />

has been better than excellent.<br />

The small group has produced dur<strong>in</strong>g<br />

the report<strong>in</strong>g period an amaz<strong>in</strong>gly<br />

high number of PhDs (10). The group<br />

has paid proper attention to patent<strong>in</strong>g.<br />

The team has been successful <strong>in</strong> develop<strong>in</strong>g<br />

NEMS applications of CNT. Nokia<br />

has been <strong>in</strong>terested <strong>in</strong> these applications.<br />

Even though the nanoelectronics<br />

research outside silicon roadmap (see<br />

above) has usually only long-term relevance,<br />

the strategic relevance of this<br />

project is medium.<br />

The future of this research entity<br />

does not look good, because the two<br />

experimentalists of the team have left<br />

Chalmers. We recommend that Chalmers<br />

will cont<strong>in</strong>ue this excellent basic research<br />

effort by hir<strong>in</strong>g a new senior experimentalist<br />

on this area.<br />

The scientific quality is excellent to<br />

outstand<strong>in</strong>g and the strategic relevance<br />

is high.<br />

Quantum Electronics <strong>Research</strong> at<br />

Chalmers<br />

Quantum electronics research at Chalmers<br />

has long traditions and the team is<br />

<strong>in</strong>ternationally well known. The team <strong>in</strong>cludes<br />

very strong <strong>in</strong>dividual scientists<br />

with complementary expertise. Their<br />

profiles cover the spectrum from basic<br />

science to applications and from theoretical<br />

to experimental skills. The team<br />

has access to state of the art <strong>in</strong>frastructure<br />

<strong>in</strong> MC2. The team has strong<br />

collaborative contacts to excellent foreign<br />

groups. It has acted as a coord<strong>in</strong>ator<br />

<strong>in</strong> many EU-projects, demonstrat<strong>in</strong>g<br />

excellent <strong>in</strong>ternational leadership on<br />

their research area.<br />

The quality and impact of this<br />

team’s scientific output is excellent.<br />

The output dur<strong>in</strong>g the report<strong>in</strong>g period<br />

<strong>in</strong>cludes 2 Nature, 1 Science, 10 Physical<br />

Review Letters, 2 Nano Letters and<br />

1 Nature Physics. This is a remarkable<br />

record for a research group of this size.<br />

The team has produced 13 PhDs<br />

and it has been pay<strong>in</strong>g attention to applications<br />

and collaboration to <strong>in</strong>dustry.<br />

The team does not report any patents.<br />

The team is not report<strong>in</strong>g any future<br />

plans. The retirements of key members<br />

present a challenge but also create an<br />

opportunity to redirect the research<br />

agenda.<br />

The scientific quality is excellent to<br />

outstand<strong>in</strong>g and the strategic relevance<br />

is low.<br />

Nanostructure Physics <strong>Research</strong> at KTH<br />

The KTH team <strong>in</strong> Nanostructure physics<br />

has excellent senior scientists. They<br />

have managed to build a very good <strong>in</strong>frastructure<br />

for their studies. They have<br />

also a strong network of <strong>in</strong>ternational<br />

academic and <strong>in</strong>dustrial collaborators.<br />

Their studies <strong>in</strong> sp<strong>in</strong>-related electronics<br />

have resulted <strong>in</strong> proposal of novel devices<br />

and experimental demonstration<br />

of sp<strong>in</strong>-diode system, with a rectification<br />

ratio larger than 100.<br />

Dur<strong>in</strong>g 2003-2008 the groups has<br />

been very productive and the quality of


Assessments of <strong>Research</strong> Areas<br />

21<br />

their scientific output has been an excellent<br />

level (5 Physical Review Letters,<br />

3 Applied Physics Letters and 3 Nano<br />

Letters), when the size of the research<br />

group is taken <strong>in</strong>to account.<br />

The societal impact of the group has<br />

been very good. They have produced 3<br />

patents and 6 PhDs out of which 5 were<br />

hired by <strong>in</strong>dustry.<br />

The group is small and at the moment<br />

undercritical. In the future the<br />

groups should hire one more senior<br />

member or focus more carefully their<br />

research topics. Otherwise their scientific<br />

impact will suffer.<br />

The scientific quality is excellent<br />

and the strategic relevance is high.<br />

Sp<strong>in</strong>tronics <strong>Research</strong> at KTH<br />

The Sp<strong>in</strong>tronics research team at KTH<br />

is at the moment undercritical (only 2<br />

senior people) but most probably it is<br />

surrounded by a strong scientific community.<br />

The <strong>in</strong>frastructure of the team<br />

seems to be <strong>in</strong> good shape. The small<br />

group size means strong fluctuations <strong>in</strong><br />

fund<strong>in</strong>g and number of personnel, and<br />

longer development times for promis<strong>in</strong>g<br />

research ideas.<br />

The scientific output, normalized by<br />

the team size and the low fund<strong>in</strong>g volume,<br />

is very good (1 Nature Materials,<br />

1 Applied Physics Letters). The team<br />

has made an <strong>in</strong>terest<strong>in</strong>g and highly cited<br />

discovery on magnetism <strong>in</strong> doped<br />

ZnO films. The further development of<br />

this idea has been slow, presumably<br />

due to the small size of the group.<br />

The team has produced 1 PhD, 4<br />

patents and one very promis<strong>in</strong>g <strong>in</strong>vention<br />

for large scale applications. This<br />

<strong>in</strong>vention has high relevance because it<br />

can be utilized with the help of heterogeneous<br />

<strong>in</strong>tegrations <strong>in</strong> mass-produced<br />

sensors.<br />

The future of the group looks weak.<br />

The senior team member is already retired<br />

and the second member has only<br />

a junior position at KTH. We recommend<br />

KTH to secure the future of this<br />

small but promis<strong>in</strong>g research l<strong>in</strong>e.<br />

The scientific quality is very good<br />

and the strategic relevance is high to<br />

very high.<br />

Nanometer Structures <strong>Research</strong> at Lund<br />

University<br />

The Lund Nanoelectronics team forms a<br />

relatively large, well organized and well<br />

managed group of scientists. They are<br />

collaborat<strong>in</strong>g effectively with each other<br />

and have a wide network of foreign partners.<br />

They also have the necessary and<br />

sufficient <strong>in</strong>frastructure to support their<br />

present projects and they are also manag<strong>in</strong>g<br />

the <strong>in</strong>frastructure well. The<br />

present <strong>in</strong>frastructure is the result of a<br />

careful <strong>in</strong>vestment plan over a period of<br />

more than 10 years.<br />

The scientific output of the Lund<br />

team, normalized by the size and resources,<br />

is excellent to outstand<strong>in</strong>g <strong>in</strong><br />

quality and impact. In the growth and<br />

characterization of semiconductor nanowires<br />

the team is one of the two <strong>in</strong>ternational<br />

leaders. The output is well<br />

cited and published <strong>in</strong> journals with relatively<br />

high impact number: the number<br />

of articles <strong>in</strong> Nature Materials (5), Nature<br />

Physics (1), Physical Review Letters<br />

(7), Nano Letters (27) and Applied Physics<br />

Letters (28) is excellent.<br />

The societal impact of the Lund<br />

team <strong>in</strong> terms of PhDs, patents and<br />

sp<strong>in</strong>-off companies is remarkable. The<br />

team has certa<strong>in</strong>ly made a tremendous<br />

effort to make a real impact. In the application<br />

areas outside the silicon roadmap,<br />

without high volume products, the<br />

strategic relevance for Sweden is medium<br />

to high.<br />

The future of the Lund team looks<br />

bright. One of the big challenges ahead<br />

will be the retirement of the present<br />

outstand<strong>in</strong>g leader of the team. Also,<br />

focus of the more mature aspects of<br />

nanowire research towards device-oriented<br />

research is recommended.<br />

The scientific quality is excellent to<br />

outstand<strong>in</strong>g and the strategic relevance<br />

is medium to high<br />

5.4 Organic Electronics<br />

The area of large area organic electronics<br />

has been selected for special support<br />

at European level <strong>in</strong> the 7th Framework<br />

Program under the theme<br />

Information and Communication Technologies.<br />

In particular, the research and<br />

<strong>in</strong>dustrial communities have networked<br />

<strong>in</strong> Europe, form<strong>in</strong>g clusters and, more<br />

importantly, sett<strong>in</strong>g up European Technology<br />

Platforms, supported ma<strong>in</strong>ly by<br />

European <strong>in</strong>dustry, as well as by Public<br />

Authorities and the <strong>Research</strong> <strong>in</strong>stitutions<br />

(higher education and research<br />

centres). The European Technology platforms<br />

of relevance to the research reported<br />

by the units here <strong>in</strong>clude photovoltaics,<br />

photonics, manufactur<strong>in</strong>g and<br />

nanomedic<strong>in</strong>e among others. These European<br />

Technology platforms have published<br />

their Strategic <strong>Research</strong> Agendas<br />

and the topics covered by the report<strong>in</strong>g<br />

units fit very well with the wider effort <strong>in</strong><br />

Europe. In other words, research <strong>in</strong> organic<br />

electronics <strong>in</strong> Sweden is <strong>in</strong> l<strong>in</strong>e<br />

with European research efforts.<br />

In the national context, its relevance<br />

is even more profound due to the high<br />

profile national paper <strong>in</strong>dustry, the energy<br />

question and the l<strong>in</strong>k to biology.<br />

For example:<br />

1) <strong>Research</strong> <strong>in</strong> manufactur<strong>in</strong>g methods<br />

such as roll-to-roll pr<strong>in</strong>t<strong>in</strong>g of organic<br />

electronic components, which has<br />

test beds <strong>in</strong> ACREO, is based on a<br />

long <strong>Swedish</strong> and Nordic <strong>in</strong>dustrial<br />

tradition. The added value is derived<br />

here from novel versatile variations


22 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

us<strong>in</strong>g new organic materials for<br />

cost-efficient electronic applications.<br />

This <strong>in</strong>cludes research <strong>in</strong><br />

pr<strong>in</strong>table functional organic materials.<br />

2) <strong>Research</strong> on specific devices such<br />

as organic transistors and diodes<br />

suitable for manufactur<strong>in</strong>g with rollto-roll<br />

pr<strong>in</strong>t<strong>in</strong>g techniques, which will<br />

be <strong>in</strong>corporated <strong>in</strong> future technology-rich<br />

components, large-area elements<br />

for applications <strong>in</strong> ambient<br />

<strong>in</strong>telligence and <strong>in</strong> the textile <strong>in</strong>dustry.<br />

3) <strong>Research</strong> <strong>in</strong> photovoltaics, address<strong>in</strong>g<br />

the cost-efficiency factor by us<strong>in</strong>g<br />

concepts of nanophotonics, and<br />

<strong>in</strong> biology, explor<strong>in</strong>g new organic materials<br />

for applications <strong>in</strong> the life sciences,<br />

such as microfluidics, electrochemical<br />

circuits, <strong>in</strong>tra-cell<br />

sens<strong>in</strong>g and stem cell differentiation.<br />

The biomedical areas build on<br />

the world-renowned expertise of the<br />

Karol<strong>in</strong>ska Institute through firmly<br />

anchored and fruitful collaboration<br />

Thus, the relevance of this field at national<br />

and European level is very (extremely)<br />

high.<br />

Two research units were evaluated<br />

<strong>in</strong> Organic Electronics, both belong<strong>in</strong>g<br />

to L<strong>in</strong>köp<strong>in</strong>g University and, more specifically,<br />

to the Centre of Organic Electronics<br />

(COE), together they cover key<br />

areas <strong>in</strong> organic electronics from material,<br />

to components, fabrication technologies,<br />

all the way to circuits and applications.<br />

One common aspect of both units is<br />

the successful collaboration with COE<br />

group of Prof M Andersson at Chalmers<br />

University on organic materials.<br />

5.4.1 Comments on report<strong>in</strong>g entities<br />

Organic Electronics <strong>Research</strong> at<br />

L<strong>in</strong>köp<strong>in</strong>g University<br />

The unit has a longer tradition than the<br />

former one. Two aspects are particularly<br />

salient <strong>in</strong> the report<strong>in</strong>g period. One is<br />

the F<strong>in</strong>ite Element simulation methods<br />

developed for the design of electrochemical<br />

systems to be pr<strong>in</strong>ted on paper,<br />

s<strong>in</strong>ce is has a potential predictive<br />

power extend<strong>in</strong>g to the expected device<br />

performance after fabrication. The other<br />

is the work <strong>in</strong> organic photovoltaics<br />

which reached 4 % efficiency by mak<strong>in</strong>g<br />

use of novel designs and emerg<strong>in</strong>g nanophotonic<br />

concepts. The research is<br />

partly evolutionary, build<strong>in</strong>g on solid<br />

foundations of soft matter physics and<br />

optoelectronic device physics applied to<br />

organic materials. Some device-relevant<br />

aspects were not <strong>in</strong>vestigated yet, such<br />

as time-stability of organic devices.<br />

Over the report<strong>in</strong>g period the unit<br />

<strong>in</strong>cluded four Pr<strong>in</strong>cipal Investigators,<br />

tra<strong>in</strong>ed 19 researchers up to PhD/licenctiate<br />

level with a fund<strong>in</strong>g of approximately<br />

SEK 46 M. The Pr<strong>in</strong>cipal Investigators<br />

are <strong>in</strong> their 40s and 50s and<br />

their selected publications are nearly all<br />

<strong>in</strong> high impact journals. They have published<br />

over 130 articles and their comb<strong>in</strong>ed<br />

citations over their careers are<br />

over 9700. There have been 10 patents<br />

filed <strong>in</strong> the report<strong>in</strong>g period.<br />

The scientific quality is excellent<br />

and the strategic relevance is high.<br />

Paper Electronics at L<strong>in</strong>köp<strong>in</strong>g University<br />

The unit performs lead<strong>in</strong>g-edge research<br />

<strong>in</strong> paper electronics and <strong>in</strong> solidstate<br />

electronics with a novel activity <strong>in</strong><br />

basic research <strong>in</strong> organic bioelectronics.<br />

On the technological front a major<br />

achievement is <strong>in</strong> the <strong>in</strong>frastructure<br />

front hav<strong>in</strong>g set up a test manufactur<strong>in</strong>g<br />

laboratory at ACREO which l<strong>in</strong>ks up to<br />

several <strong>in</strong>dustrial beneficiaries. While at<br />

present research is focused on pr<strong>in</strong>t<strong>in</strong>g<br />

features of 10-100 µm, future developments<br />

are foreseen to reduce the feature<br />

size, potentially down to molecular<br />

scale. For the device research the unit<br />

collaborates with lead<strong>in</strong>g laboratories <strong>in</strong><br />

Europe and the Americas. On the more<br />

basic science front the modell<strong>in</strong>g of the<br />

molecular/nano switch and the control<br />

of <strong>in</strong>tra-cell signall<strong>in</strong>g are particular<br />

highlights. From the extensive and <strong>in</strong>timate<br />

co-operation with <strong>in</strong>dustry and the<br />

scope and numbers of patented knowhow,<br />

it is not difficult to see that this<br />

research field and the results of this<br />

unit impact electronics, packag<strong>in</strong>g,<br />

pharmaceutical, optical, energy, display,<br />

security, food and biotechnology-based<br />

<strong>in</strong>dustries.<br />

Over the report<strong>in</strong>g period the unit<br />

<strong>in</strong>cluded three Pr<strong>in</strong>cipal Investigators,<br />

tra<strong>in</strong>ed 15 researchers up to PhD/licenciate<br />

level with a fund<strong>in</strong>g of approximately<br />

SEK 56 M. The Pr<strong>in</strong>cipal Investigators<br />

are <strong>in</strong> their 40s and their<br />

selected publications are nearly all <strong>in</strong><br />

high impact journals. They have published<br />

over 60 articles and their comb<strong>in</strong>ed<br />

citations over their careers are<br />

almost 7000. There have been 17 patents<br />

filed and 7 sp<strong>in</strong> offs set up <strong>in</strong> the<br />

report<strong>in</strong>g period.<br />

The scientific quality is excellent<br />

and the relevance is very high.<br />

5.5 Photonics<br />

The ma<strong>in</strong> emphasis of the Photonics research<br />

<strong>in</strong> Sweden is related to telecommunications.<br />

This is relevant for Sweden<br />

<strong>in</strong> particular when consider<strong>in</strong>g that<br />

Ericsson did return back to optical fiber<br />

communication systems after merg<strong>in</strong>g<br />

with Marconi.<br />

The <strong>Research</strong> work on optical fibre<br />

transmission systems is <strong>in</strong> particular<br />

be<strong>in</strong>g carried out at Chalmers. In the<br />

past the activities concentrated there


Assessments of <strong>Research</strong> Areas<br />

23<br />

on ultra long haul high speed systems<br />

and important scientific achievements<br />

had been achieved. With respect to <strong>in</strong>dustrial<br />

relevance (<strong>in</strong> particular with respect<br />

to Ericsson) it will be important to<br />

consider high capacity data transmission<br />

also for shorter transmission distances<br />

(e.g. fibre-to-the-home or local<br />

area networks). There are a lot of ideas<br />

under way for future projects <strong>in</strong> this direction<br />

at Chalmers especially with respect<br />

to 100 Gb-Ethernet, but it must<br />

be checked whether such a small group<br />

will be able to handle all these projects<br />

and still achiev<strong>in</strong>g world lead<strong>in</strong>g results.<br />

Optical fibre transmission is also<br />

considered at KTH <strong>in</strong> terms of quantum<br />

cryptography. Even though the research,<br />

be<strong>in</strong>g carried out there is really outstand<strong>in</strong>g<br />

from the scientific po<strong>in</strong>t of<br />

view, there is little impact on the <strong>in</strong>dustry<br />

<strong>in</strong> Sweden, s<strong>in</strong>ce the key distribution<br />

via quantum cryptography is still a niche<br />

application.<br />

With respect to optical fibre transmission<br />

it is thus recommended that<br />

the research will be strengthened <strong>in</strong> areas<br />

which are closer to application.<br />

The majority of projects be<strong>in</strong>g carried<br />

out <strong>in</strong> Sweden <strong>in</strong> the “Photonics”<br />

area are related to photonic materials<br />

and devices. In particular, the work be<strong>in</strong>g<br />

carried out at Chalmers and at the<br />

KTH on semiconductor lasers and high<br />

speed modulators is outstand<strong>in</strong>g and<br />

has a substantial <strong>in</strong>dustrial impact; e.g.<br />

with respect to Syntune, Zarl<strong>in</strong>k as component<br />

manufactures or to help Ericsson<br />

to work on advanced systems research<br />

with state-of-the-art devices.<br />

Even though the panel did get the impression<br />

of a good cooperation between<br />

Chalmers and KTH on this subject there<br />

may still room for <strong>in</strong>tensified collaboration.<br />

The applications for the research<br />

work at KTH on nanophotonics are not<br />

as obvious, even though the work is of<br />

high scientific quality. It will be important<br />

to identify activities which are useful<br />

to the development for the <strong>Swedish</strong><br />

<strong>in</strong>dustry. These applications may be<br />

well outside of the area of telecommunications,<br />

e.g. sens<strong>in</strong>g devices for which<br />

the use of plasmonic waveguides or<br />

photonic crystals may be quite useful.<br />

Other non-telecom driven areas <strong>in</strong>volve<br />

the research work on liquid crystals,<br />

conducted at Chalmers. Even<br />

though there is no real display <strong>in</strong>dustry<br />

<strong>in</strong> Sweden, <strong>in</strong>terest<strong>in</strong>g application areas<br />

had been identified (weld<strong>in</strong>g helmet)<br />

support<strong>in</strong>g <strong>in</strong>novative <strong>Swedish</strong> products.<br />

Very important has also been the<br />

work on light<strong>in</strong>g where LED:s will play a<br />

very important role <strong>in</strong> the future, but<br />

the l<strong>in</strong>k between the research work and<br />

the <strong>in</strong>dustrial potential for Sweden has<br />

still to be developed.<br />

5.5.1 Comments on report<strong>in</strong>g entities<br />

Photonic communication research at<br />

Chalmers<br />

Scientific quality: The group has a very<br />

high reputation <strong>in</strong> high speed optical fibre<br />

transmission. Outstand<strong>in</strong>g results<br />

have also been achieved <strong>in</strong> the area of<br />

fibre optical parametric amplifiers (world<br />

lead<strong>in</strong>g group) and <strong>in</strong> “optical sampl<strong>in</strong>g”.<br />

Outstand<strong>in</strong>g theoretical work has<br />

been performed with respect to polarization<br />

mode dispersion and polarization<br />

dependent loss.<br />

Impact and relevance: With respect<br />

to the work of optical sampl<strong>in</strong>g, the<br />

company PicoSolve has been established.<br />

The company has presently 6<br />

employees, but significant growth can<br />

be expected. Extensive work is be<strong>in</strong>g<br />

done on optical performance monitor<strong>in</strong>g<br />

on a fibre l<strong>in</strong>e <strong>in</strong>stalled between Stockholm<br />

and Hudiksvall, which turns out to<br />

be quite relevant to the <strong>in</strong>dustrial partners<br />

<strong>in</strong>volved.<br />

Future: Future activities will, e.g., <strong>in</strong>volve<br />

activities <strong>in</strong> the area of 100 Gb-<br />

Ethernet and activities on shorter l<strong>in</strong>ks,<br />

<strong>in</strong>clud<strong>in</strong>g l<strong>in</strong>ks with multimode fibres,<br />

borrow<strong>in</strong>g techniques from mobile transmission.<br />

Personnel and Infrastructure: The<br />

group <strong>in</strong>volves about 12 people, and related<br />

to this number the group produces<br />

a high amount of outstand<strong>in</strong>g research.<br />

Peter Andrekson did also manage to get<br />

fund<strong>in</strong>g for <strong>in</strong>vestments, so that he can<br />

use state of the art equipment.<br />

Collaboration: The group is <strong>in</strong>volved<br />

<strong>in</strong> excellent <strong>in</strong>ternational and national<br />

networks, which is expressed also by<br />

the <strong>in</strong>volvement <strong>in</strong> several EU projects.<br />

The local cooperation with the group on<br />

photonic components (Anders Larsson)<br />

is also very efficient.<br />

Overall scientific quality of their work<br />

is outstand<strong>in</strong>g and relevance is very<br />

high.<br />

Photonic component research at L<strong>in</strong>köp<strong>in</strong>g<br />

University<br />

Scientific quality: Outstand<strong>in</strong>g results<br />

have been achieved <strong>in</strong> the area of ZnO<br />

materials and devices. The <strong>in</strong>ternational<br />

visibility is documented by a large<br />

number of <strong>in</strong>vited talks around the<br />

world. However, <strong>in</strong> the period 2003 -<br />

2007, there is only one successful PhD<br />

(to be f<strong>in</strong>ished <strong>in</strong> 2008).<br />

Impact and relevance: The work may<br />

be of high relevance for the light<strong>in</strong>g <strong>in</strong>dustry.<br />

There are <strong>in</strong>dustrial contacts to<br />

Osram and there is a company<br />

StormLED for market<strong>in</strong>g patents which<br />

have been filed with<strong>in</strong> the group.<br />

Future: A lot of ideas are be<strong>in</strong>g created<br />

<strong>in</strong> this group <strong>in</strong>volv<strong>in</strong>g devices with<br />

nanostructures and nano-rods and organic-<strong>in</strong>organic<br />

devices. In this respect<br />

the group (ma<strong>in</strong>ly Magnus Willander<br />

himself) is very creative.<br />

Personnel and Infrastructure: In the


24 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

past the group had been very small<br />

(only about 2 PhD students) and was<br />

thus under-critical. Now the situation<br />

seems to get better; and <strong>in</strong>deed the<br />

topic of the research with respect to efficient<br />

light<strong>in</strong>g is very important. With<br />

respect to <strong>in</strong>frastructure a new MOCVD<br />

system is just be<strong>in</strong>g set up, so that an<br />

adequate <strong>in</strong>frastructure is available.<br />

Collaboration: Magnus Willander is<br />

coord<strong>in</strong>at<strong>in</strong>g a European project and<br />

there are several <strong>in</strong>ternational collaborations;<br />

<strong>in</strong>ternal cooperations are not<br />

as obvious.<br />

Overall scientific quality of their work<br />

is excellent and the relevance is medium.<br />

Quantum optics <strong>Research</strong> at KTH<br />

Scientific quality: The group is conduct<strong>in</strong>g<br />

excellent research <strong>in</strong> the area of<br />

quantum cryptography. They have a lot of<br />

highly cited research papers and they are<br />

develop<strong>in</strong>g really new ideas like the “decoy<br />

state quantum cryptography”. This<br />

research work is a rather basic research<br />

which, however, might have significant<br />

impact <strong>in</strong> generat<strong>in</strong>g new ideas <strong>in</strong> the<br />

wider range of quantum electronics.<br />

Impact and relevance: Even though<br />

a secure key transmission is quite important,<br />

the direct cooperation with <strong>in</strong>dustrial<br />

companies is still weak, and<br />

thus, there is little impact on the <strong>in</strong>dustry<br />

<strong>in</strong> Sweden. There is some <strong>in</strong>terest<br />

from the defence department of Sweden.<br />

Future: There are a lot of ideas<br />

around <strong>in</strong> this group which may be important<br />

for an improved basic understand<strong>in</strong>g<br />

of Quantum Optics.<br />

Personnel and Infrastructure: Due to<br />

a lack of f<strong>in</strong>ancial fund<strong>in</strong>g the group has<br />

become smaller and one must be careful<br />

that the size of this group does not<br />

become undercritical.<br />

Collaboration: The success of this<br />

group is very well documented by the<br />

<strong>in</strong>volvement <strong>in</strong> a large number of EU<br />

projects. Presently, the fraction of EU<br />

fund<strong>in</strong>g approaches 50 % which is perhaps<br />

already too high for a stable development.<br />

The success <strong>in</strong> European<br />

projects is also documented by the Descartes<br />

Prize <strong>in</strong> 2004.<br />

Overall scientific quality of their work<br />

is excellent and relevance is medium.<br />

Photonic devices <strong>Research</strong> at Chalmers<br />

Scientific quality: In particular the work<br />

on VCSEL:s and disk lasers is very impressive.<br />

These contributions are really<br />

at the highest <strong>in</strong>ternational level, <strong>in</strong>clud<strong>in</strong>g<br />

the activities of extend<strong>in</strong>g the emission<br />

wavelength up to 1.55 µm for lasers<br />

on GaAs substrates. The work on<br />

opto-electronic A/D converters is <strong>in</strong>terest<strong>in</strong>g<br />

with high sampl<strong>in</strong>g rates of 40<br />

GS/s (G samples/s), but the competition<br />

with Electronics is difficult to beat.<br />

With respect to liquid crystals very<br />

promis<strong>in</strong>g research work is be<strong>in</strong>g conducted<br />

with respect to very fast ( ~ µs)<br />

devices.<br />

Impact and relevance: The laser activities<br />

are of a high level both with repect<br />

to basic physics but they have also<br />

a big <strong>in</strong>dustrial impact as demonstrated,<br />

e.g., by the cooperation with Zarl<strong>in</strong>k.<br />

With respect to liquid crystals applications<br />

are be<strong>in</strong>g explored for a new type<br />

of weld<strong>in</strong>g mask visor capable of stroboscopically<br />

follow<strong>in</strong>g the light <strong>in</strong>tensity<br />

dur<strong>in</strong>g pulsed weld<strong>in</strong>g. The <strong>in</strong>dustrial impact<br />

for the work on opto-electronic A/D<br />

is still very weak.<br />

Future: The future work on lasers will<br />

be directed to higher speed (40 Gbit/s)<br />

and wavelength extension which is very<br />

relevant. The relevance is also high for<br />

the liquid crystal work. The future plans<br />

for the activities <strong>in</strong> Optics are not as<br />

clear.<br />

Personnel and Infrastructure: The<br />

number of PhD students is reasonable<br />

with an adequate <strong>in</strong>frastructure.<br />

Collaboration: The high level of <strong>in</strong>ternational<br />

cooperation is underl<strong>in</strong>ed by<br />

the <strong>in</strong>volvement <strong>in</strong> several European<br />

projects. With respect to the laser work<br />

the group has an outstand<strong>in</strong>g <strong>in</strong>ternational<br />

visibility.<br />

Overall scientific quality of their work<br />

is excellent and relevance is high.<br />

Photonic and microwave eng<strong>in</strong>eer<strong>in</strong>g<br />

<strong>Research</strong> at KTH<br />

Scientific quality: This is a very large<br />

group with a large number of really<br />

world lead<strong>in</strong>g research contributions <strong>in</strong><br />

particular with respect to the 1.3 µm<br />

VCSEL (<strong>in</strong> cooperation with Chalmers)<br />

and the 100 Gbit/s modulator. Impressive<br />

results have also been achieved <strong>in</strong><br />

the area of Nanophotonics, <strong>in</strong> particular<br />

the experimental evidence of negative<br />

refraction <strong>in</strong> Photonic crystals is remarkable.<br />

Impact and relevance: An impressive<br />

number of sp<strong>in</strong>-off companies have<br />

been established. Intensive cooperation<br />

exists <strong>in</strong> the field of laser diodes with<br />

the sp<strong>in</strong>-off company Syntune and with<br />

Zarl<strong>in</strong>k. The excellent results on high<br />

speed modulators enable the group to<br />

play a major part <strong>in</strong> a new CELTIC<br />

project (100 Gb-Ethernet) <strong>in</strong> cooperation<br />

with Ericsson. Furthermore a lot of<br />

outstand<strong>in</strong>g results have been obta<strong>in</strong>ed<br />

<strong>in</strong> the area of photonic crystals, but the<br />

applications are not as obvious.<br />

Future: Visionary plans exist with respect<br />

to functional photonic materials,<br />

nanophotonics and high capacity optical<br />

<strong>in</strong>formation systems. These plans are<br />

very ambitious and care must be taken<br />

that activities are identified which can<br />

be transferred to exist<strong>in</strong>g or new <strong>Swedish</strong><br />

companies.<br />

Personnel and Infrastructure: 47<br />

PhDs/Lic have been graduated dur<strong>in</strong>g


Assessments of <strong>Research</strong> Areas<br />

25<br />

the last 5 years which is a very satisfactory<br />

number.<br />

Collaboration: The group is engaged<br />

<strong>in</strong> a large number of EU- and other <strong>in</strong>ternational<br />

projects. The group has a high<br />

<strong>in</strong>ternational visibility.<br />

Overall scientific quality of their work<br />

is excellent and the relevance is high.<br />

Photonic materials <strong>Research</strong> at<br />

Chalmers<br />

Scientific quality: Good results have<br />

been obta<strong>in</strong>ed <strong>in</strong> cooperation with KTH<br />

on grow<strong>in</strong>g AlN/GaN superlattice materials<br />

with MBE. It is remarkable, that<br />

good results have been obta<strong>in</strong>ed also <strong>in</strong><br />

devices with organic materials.<br />

Impact and relevance: The group<br />

had been quite successful <strong>in</strong> grow<strong>in</strong>g<br />

superlattice materials, a possible application<br />

might be <strong>in</strong> the area of quantum<br />

cascade lasers, but this has still to<br />

be proven.<br />

Future: S<strong>in</strong>ce the group has been<br />

shr<strong>in</strong>k<strong>in</strong>g considerably, it will be difficult<br />

to build up aga<strong>in</strong> a group of significant<br />

<strong>in</strong>ternational visibility.<br />

Personnel and Infrastructure: The<br />

group has become now quite small (only<br />

3 persons and 2 of them are just leav<strong>in</strong>g,<br />

lack of critical mass) and new <strong>in</strong>vestment<br />

is required.<br />

Collaboration: There is some cooperation<br />

with KTH on AlN/GaN superlattices,<br />

but based on the very small group<br />

much more cooperation would be required.<br />

Even with<strong>in</strong> Chalmers a much<br />

more <strong>in</strong>tense cooperation would be necessary.<br />

The European collaborations<br />

are also weak, dur<strong>in</strong>g the report<strong>in</strong>g period<br />

the group had not been <strong>in</strong>volved <strong>in</strong><br />

any European project.<br />

Overall scientific quality of their work<br />

is good and relevance is low.<br />

5.6 System Design<br />

It is important to note that a system is<br />

only a relative term and that one def<strong>in</strong>ition<br />

of a system is that it is “the level of<br />

abstraction one above the level <strong>in</strong> which<br />

you are work<strong>in</strong>g”. S<strong>in</strong>ce the primary focus<br />

of Sweden’s Microelectronic work<br />

has been <strong>in</strong> the area of device and materials<br />

research, the design and optimization<br />

of circuits has been the system<br />

level of <strong>in</strong>terest, with an effort at 4 Universities.<br />

These system (circuit) efforts<br />

conta<strong>in</strong> some outstand<strong>in</strong>g <strong>in</strong>dividual efforts<br />

while others range down to be<strong>in</strong>g<br />

merely good, with the overall assessment<br />

of the research quality be<strong>in</strong>g rated<br />

as excellent. There is also some <strong>in</strong>consistency<br />

<strong>in</strong> this system (circuit) research<br />

with respect to the relevance to Sweden’s<br />

strategic goals, but overall it is<br />

considered high.<br />

The level of excellence <strong>in</strong> research<br />

quality arises from the <strong>in</strong>ternational recognition<br />

and publication <strong>in</strong> the top <strong>in</strong>ternational<br />

eng<strong>in</strong>eer<strong>in</strong>g journals and conferences<br />

and the sophistication of the<br />

<strong>in</strong>tegrated circuits which have been designed.<br />

The excellence <strong>in</strong> relevance<br />

stems from tra<strong>in</strong><strong>in</strong>g of students which<br />

are <strong>in</strong> a particularly high demand <strong>in</strong><br />

<strong>Swedish</strong> <strong>in</strong>dustry as well as the focus<br />

on telecommunication build<strong>in</strong>g block circuits<br />

which are central to an important<br />

part of Sweden’s economy. One of the<br />

primary issues which keep these efforts<br />

from be<strong>in</strong>g at the highest <strong>in</strong>ternational<br />

level is the relatively small level of fund<strong>in</strong>g<br />

(compared to many other programs<br />

<strong>in</strong> microelectronics) which results <strong>in</strong><br />

some of these be<strong>in</strong>g funded at almost<br />

sub critical levels at least compared to<br />

<strong>in</strong>ternational norms.<br />

It is recommended that there are<br />

two changes which are needed to br<strong>in</strong>g<br />

these efforts to the outstand<strong>in</strong>g level.<br />

One is that there should be a change of<br />

focus and a significant <strong>in</strong>crease <strong>in</strong> support.<br />

The change of focus <strong>in</strong>volves mov<strong>in</strong>g<br />

to the next level <strong>in</strong> system design, <strong>in</strong><br />

which the circuit block (the previous focus<br />

of the “systems” research) is just a<br />

component and addresses the realization<br />

that, over the next 10 years, the<br />

advances <strong>in</strong> CMOS technology will allow<br />

complex chips that conta<strong>in</strong> over a billion<br />

device elements and therefore will <strong>in</strong><br />

turn allow complete systems on a chip<br />

(SOC). These SOC’s will conta<strong>in</strong> multiple<br />

analog and digital circuits as well as<br />

multiple (possibly multicore) embedded<br />

processors to be <strong>in</strong>tegrated. These<br />

complex SOC’s, will implement not only<br />

the signal process<strong>in</strong>g and communication<br />

algorithms, but protocols and user<br />

<strong>in</strong>terfaces at a level of flexibility which<br />

must be obta<strong>in</strong>ed at the lowest possible<br />

cost and power. The programm<strong>in</strong>g<br />

task of these highly parallel architectures<br />

will require new comput<strong>in</strong>g models,<br />

which are as yet not understood. Of<br />

particular importance to SOC design,<br />

relevant to <strong>Swedish</strong> <strong>in</strong>dustry, will be<br />

chips that implement flexible radio networks.<br />

It is encouraged that cross discipl<strong>in</strong>ary<br />

efforts which couple this SOC research<br />

direction to new device and material<br />

components be <strong>in</strong>cluded, with the<br />

goal of allow<strong>in</strong>g unique and possibly revolutionary<br />

new capabilities. <strong>Research</strong> <strong>in</strong><br />

advanced packag<strong>in</strong>g concepts will be<br />

required to merge these two areas,<br />

s<strong>in</strong>ce the CMOS fabrication will be performed<br />

at foreign foundries which will<br />

allow use of the most advanced technology<br />

at a relatively low cost to the<br />

system researchers.<br />

Another important research direction<br />

is to use the exponentially <strong>in</strong>creas<strong>in</strong>g<br />

digital capability of CMOS to compensate<br />

for the limitations or to allow<br />

exploitation of these new devices and<br />

materials to meet novel or more demand<strong>in</strong>g<br />

application requirements. This<br />

extends even to the compensation of<br />

impairments of <strong>in</strong>tegrated CMOS analog


26 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

circuits which will be <strong>in</strong>creas<strong>in</strong>gly difficult<br />

to design as the technology is exponentially<br />

scaled to ever smaller and<br />

denser SOC’s. This optimization should<br />

be performed <strong>in</strong> close cooperation with<br />

the ultimate application, which will <strong>in</strong>sure<br />

relevance to present and potentially<br />

new <strong>Swedish</strong> companies.<br />

In order to support the above research<br />

agenda it will be necessary to<br />

develop new SOC level design methodologies<br />

as well as simulators and optimizers.<br />

These should be able to exploit<br />

design tools and simulators which support<br />

not only advanced CMOS technology,<br />

but also the new components com<strong>in</strong>g<br />

from the device and material<br />

research. S<strong>in</strong>ce this activity will cover<br />

research that ranges from basic to application<br />

driven with strong <strong>in</strong>dustrial<br />

relevance it does not naturally fit with<strong>in</strong><br />

the scope of one of the three fund<strong>in</strong>g<br />

agencies (VR, SSF and V<strong>in</strong>nova). It is<br />

therefore recommended that such a<br />

program have fund<strong>in</strong>g participation from<br />

all three.<br />

Such an <strong>in</strong>tegrated approach to the<br />

research across what is def<strong>in</strong>ed as <strong>Microelectronics</strong><br />

<strong>in</strong> Sweden will allow advances<br />

<strong>in</strong> CMOS technology to be exploited<br />

<strong>in</strong> ways that are uniquely<br />

beneficial to <strong>Swedish</strong> strategic <strong>in</strong>terests.<br />

5.6.1 Comments on report<strong>in</strong>g entities<br />

System Design <strong>Research</strong> at KTH<br />

The report<strong>in</strong>g entity covered many activities<br />

dur<strong>in</strong>g the report<strong>in</strong>g period, <strong>in</strong>clud<strong>in</strong>g:<br />

• Low power RF and mixed signal circuits<br />

for convergent wireless (we<br />

take it to mean comb<strong>in</strong>ed wide- and<br />

local area applications) handhelds<br />

• Software def<strong>in</strong>ed radio<br />

• Low power digital design, chip communication<br />

and <strong>in</strong>terconnect design<br />

• Technology to pr<strong>in</strong>t RFID and other<br />

circuits and systems on paper<br />

The areas of activities have are of<br />

very high importance for Sweden´s<br />

long-term competiveness and research<br />

carried out are on the whole of excellent<br />

quality. The nascent pr<strong>in</strong>ted circuits<br />

on paper activities have the potential to<br />

have very high impact.<br />

The RF-IC activities peaked at the<br />

beg<strong>in</strong>n<strong>in</strong>g of the report<strong>in</strong>g period, with<br />

the publication of a highly <strong>in</strong>tegrated<br />

s<strong>in</strong>gle-chip wireless LAN transceiver <strong>in</strong><br />

RF CMOS. Subsequently the group has<br />

redirected its efforts towards reconfigurable<br />

and software def<strong>in</strong>ed radio concepts<br />

and test circuits, notably A/D<br />

converters and subsampl<strong>in</strong>g techniques.<br />

These activities are of very<br />

good to excellent scientific quality, and<br />

prepare them well to rise from a highly<br />

regarded RF and mixed signal IC group<br />

to one of the academic leaders <strong>in</strong> the<br />

field.<br />

The <strong>in</strong>itial activities <strong>in</strong> pr<strong>in</strong>ted paper<br />

electronics are quite unique <strong>in</strong> the<br />

world, which impressed the reviewers<br />

most. Though not yet very advanced, it<br />

is a new field where the <strong>in</strong>vestigators<br />

can be expected to make their mark scientifically,<br />

and create significant impact<br />

<strong>in</strong> <strong>in</strong>dustry.<br />

System Design <strong>Research</strong> at Lund<br />

University<br />

The report<strong>in</strong>g entity has been dedicated<br />

to circuit and system design excellence<br />

for many years. The report<strong>in</strong>g period co<strong>in</strong>cided<br />

with the f<strong>in</strong>al phase of its fund<strong>in</strong>g<br />

but many activities have been carried<br />

out despite the retirement of the<br />

pr<strong>in</strong>cipal <strong>in</strong>vestigator and graduation of<br />

many doctoral students.<br />

The report<strong>in</strong>g entity has a pool of<br />

<strong>in</strong>dustrial sponsors, <strong>in</strong>clud<strong>in</strong>g such<br />

names as Ericsson, Ericsson Mobile<br />

Platform, Inf<strong>in</strong>eon and United <strong>Microelectronics</strong><br />

Corporation, Taiwan, which have<br />

served to ensure that their activities are<br />

of very high importance for Sweden´s<br />

long-term competiveness. The quality of<br />

research carried out is on the whole excellent.<br />

Their stand<strong>in</strong>g <strong>in</strong> the academic<br />

world has been excellent also, although<br />

the reviewers regret that the fund<strong>in</strong>g<br />

ramp downwards dur<strong>in</strong>g the report<strong>in</strong>g<br />

period may well hamper the future of<br />

Lund as one of the leaders <strong>in</strong> <strong>in</strong>tegrated<br />

circuits for communications.<br />

For the report<strong>in</strong>g period, circuits<br />

such as 26 GHz VCO and 60 GHz power<br />

amplifiers, beam-form<strong>in</strong>g transmitter<br />

and novel LNA and mixer structures<br />

have been developed. Many patents<br />

have been filed by partner companies<br />

such as Ericsson, which testify the <strong>in</strong>novativeness<br />

of the <strong>in</strong>ventions.<br />

Digital design also play an active<br />

part <strong>in</strong> the activities of the report<strong>in</strong>g entity<br />

dur<strong>in</strong>g the report<strong>in</strong>g period. Embedded<br />

architectures have been developed,<br />

and realized <strong>in</strong> some cases <strong>in</strong> VLSI<br />

form, for various communications applications<br />

<strong>in</strong>clud<strong>in</strong>g MIMO and holographic<br />

imag<strong>in</strong>g applications employ<strong>in</strong>g<br />

two-dimensional Fast Fourier Transform.<br />

The reviewers are pleased to learn<br />

that a new Industrial Excellence Centre<br />

for Systems on Chip has recently been<br />

funded and established. Hopefully this<br />

will carry the torch of the report<strong>in</strong>g entity<br />

forward, and cultivate coherence between<br />

the analogue, digital and embedded<br />

software activities <strong>in</strong> the future.<br />

System Design <strong>Research</strong> at Chalmers<br />

The exploitation of future scaled technology<br />

to achieve flexible computation<br />

with improved power efficiency, its application<br />

to portable devices such as<br />

video and image process<strong>in</strong>g usable for<br />

multimedia, software design suitable<br />

for parallel and flexible processors, are<br />

extremely relevant to both communica-


Assessments of <strong>Research</strong> Areas<br />

27<br />

tions and computer <strong>in</strong>dustries <strong>in</strong> the<br />

SOC era.<br />

The relevance of the FlexSoc project<br />

is therefore outstand<strong>in</strong>g. Towards the<br />

objectives of a flexible system on chip<br />

the report<strong>in</strong>g entity made excellent<br />

progress. The multi-processor architecture<br />

activities resulted <strong>in</strong> significant advances<br />

<strong>in</strong> power efficiency, execution<br />

bandwidth while ma<strong>in</strong>ta<strong>in</strong><strong>in</strong>g programmability.<br />

A significant effort is made to<br />

improve embedded software for multi<br />

processor architecture, although the<br />

functional programm<strong>in</strong>g and software<br />

verification activities have not been<br />

geared towards the FlexSoc activities.<br />

The VLSI group has explored key areas<br />

of gate level design for low leakage<br />

and low power <strong>in</strong> sleep mode, as well<br />

as macro model<strong>in</strong>g of power consumption<br />

<strong>in</strong> circuits and memory. Integration<br />

of key components such as multipliers<br />

and data paths with flexible <strong>in</strong>terconnects<br />

has been carried out to verify the<br />

accuracy of power model<strong>in</strong>g. Work has<br />

also been carried out on model<strong>in</strong>g of<br />

substrate noise generated by digital circuitry<br />

and their potential impact on analog<br />

circuits <strong>in</strong> a mixed signal environment.<br />

This effort is of very good quality<br />

s<strong>in</strong>ce it is <strong>in</strong> the catch-up phase relative<br />

to the state-of-the-art.<br />

Overall the report<strong>in</strong>g entity at a relatively<br />

low level of fund<strong>in</strong>g has carried<br />

out work of very high importance for<br />

Sweden´s long-term competiveness with<br />

excellent scientific quality, which prepares<br />

them well to rise up to a lead<strong>in</strong>g<br />

position among the <strong>in</strong>ternational academic<br />

research groups <strong>in</strong> the same<br />

area.<br />

System Design <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g<br />

University<br />

The report<strong>in</strong>g entity centers round the<br />

Str<strong>in</strong>gent <strong>Research</strong> Center. The ma<strong>in</strong><br />

themes of research, namely <strong>in</strong>tegrated<br />

circuits and systems for communications<br />

and microprocessors, and is of<br />

high importance for Sweden´s long-term<br />

competiveness. The researchers are<br />

well connected with lead<strong>in</strong>g companies<br />

such as Ericsson and Intel, and have<br />

been very active <strong>in</strong> sp<strong>in</strong>-off companies<br />

that aim at a high potential for expansion.<br />

The quality of research is outstand<strong>in</strong>g<br />

<strong>in</strong> the area high-performance<br />

circuits and excellent otherwise. They<br />

have a strong presence <strong>in</strong> the <strong>in</strong>ternational<br />

research community, and are<br />

among a small number of academic research<br />

group<strong>in</strong>gs <strong>in</strong> the world that are<br />

capable of mak<strong>in</strong>g a regular contribution<br />

to the International Solid-State Circuits<br />

Conference, which is one of the strongest<br />

<strong>in</strong>dicators that several of the sub<br />

groups <strong>in</strong> the Str<strong>in</strong>gent center enjoy a<br />

status of high regard among their <strong>in</strong>ternational<br />

academic peers.<br />

The Str<strong>in</strong>gent Center is strong <strong>in</strong> digital<br />

circuits and systems. Highlight of digital<br />

processor design is a jo<strong>in</strong>t publication<br />

with world lead<strong>in</strong>g Intel on one of the<br />

latter’s latest microprocessors. The<br />

emergent activities <strong>in</strong> digital baseband<br />

modem, a field requir<strong>in</strong>g substantial<br />

knowledge and understand<strong>in</strong>g of wireless<br />

communications, have burst <strong>in</strong>to<br />

the <strong>in</strong>ternational arena with the group’s<br />

first publication on an embedded multipurpose<br />

DSP for DVB-H and other OFDM<br />

based application standards. Design<br />

and test<strong>in</strong>g of embedded systems have<br />

their own place amongst their peers, with<br />

their share of the most <strong>in</strong>fluential papers<br />

at DATE <strong>in</strong> the past 10 years.<br />

Outside the traditional stronghold of<br />

digital design, the Center has recently<br />

expanded <strong>in</strong>to RF circuits for reconfigurability,<br />

A/D & D/A converters etc,<br />

which is beg<strong>in</strong>n<strong>in</strong>g to reach excellence.<br />

The reviewers also note positively that<br />

collaboration with material scientists on<br />

the use of TCAD for RF power amplifier<br />

design us<strong>in</strong>g novel devices such as SiC<br />

transistors, extends the center’s <strong>in</strong>fluence<br />

to their more science-centric colleagues.


28 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong>


Appendix<br />

29<br />

Appendix 1. Evaluated project leaders and rapporteurs<br />

<strong>Research</strong> sub-area/Report<strong>in</strong>g Entity Rapporteur Project Leaders<br />

Silicon and Wide Bandgap Components<br />

Silicon <strong>Research</strong> at KTH Östl<strong>in</strong>g, Mikael Hallén, Anders<br />

Hellström, Per-Erik<br />

L<strong>in</strong>narsson, Margareta<br />

L<strong>in</strong>nros, Jan<br />

Willén, Bo<br />

Zhang, Shi-Li<br />

Östl<strong>in</strong>g, Mikael<br />

Silicon <strong>Research</strong> at Uppsala University Katardjev, Ilia Berg, Sören<br />

Katardjev, Ilia<br />

Olsson, Jörgen<br />

Rydberg, Anders<br />

Silicon Carbide <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Janzén, Erik Bergman, Peder<br />

University<br />

Henry, Anne<br />

Janzén, Erik<br />

Kakanakova, Anelia<br />

Son, NT<br />

Gallium Nitride <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Monemar, Bo Buyanova, Ir<strong>in</strong>a<br />

University<br />

Chen, Weim<strong>in</strong><br />

Darakchieva, Vanya<br />

Monemar, Bo<br />

Paskov, Plamen<br />

Silicon <strong>Research</strong> at Chalmers Engström, Olof Bengtsson, Stefan<br />

Engström, Olof<br />

Enoksson, Peter<br />

Lundgren, Per<br />

High Speed Electronics<br />

Microwaves <strong>Research</strong> at Chalmers Zirath, Herbert Grahn, Jan<br />

Rorsman, Niklas<br />

Starski, Piotr<br />

Swahn, Thomas<br />

Zirath, Herbert<br />

Terahertz Systems <strong>Research</strong> at Chalmers Stake, Jan Gevorgian, Spartak<br />

Stake, Jan


30 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

<strong>Research</strong> sub-area/Report<strong>in</strong>g Entity Rapporteur Project Leaders<br />

Nanoelectronics<br />

Nanotubes <strong>Research</strong> at Chalmers Campbell, Eleanor Campbell, Eleanor<br />

Gorelik, Leonid<br />

K<strong>in</strong>aret, Jari<br />

Shekhter, Robert<br />

Svensson, Krister<br />

Quantum Electronics <strong>Research</strong> at Chalmers Dels<strong>in</strong>g, Per Claeson, Tord<br />

Dels<strong>in</strong>g, Per<br />

Kubatk<strong>in</strong>, Sergey<br />

Kuzm<strong>in</strong>, Leonid<br />

Lombardi, Filomena<br />

Wend<strong>in</strong>, Göran<br />

Nanostructure Physics <strong>Research</strong> at KTH Haviland, David Haviland, David<br />

Korenivski, Vladislav<br />

Sp<strong>in</strong>tronics <strong>Research</strong> at KTH Rao, K Venkat Belova, Lyubov<br />

Rao, K Venkat<br />

Nanometer Structures <strong>Research</strong> at Lund Samuelson, Lars Deppert, Knut<br />

University<br />

Montelius, Lars<br />

Pistol, Mats-Erik<br />

Samuelson, Lars<br />

Tegenfeldt, Jonas<br />

Thelander, Claes<br />

Wacker, Andreas<br />

Wallenberg, Re<strong>in</strong>e<br />

Wernersson, Lars-Erik<br />

Xu, Hongqi<br />

Organic Electronics<br />

Organic Electronics <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Inganäs, Olle Forchheimer, Robert<br />

University<br />

Inganäs, Olle<br />

Stafström, Sven<br />

Zozoulenko, Igor<br />

Paper Electronics <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Berggren, Magnus Berggren, Magnus<br />

University<br />

Fahlman, Mats<br />

Lögdlund, Michael<br />

Photonics<br />

Photonic Communication <strong>Research</strong> Andrekson, Peter Andrekson, Peter<br />

at Chalmers<br />

Karlsson, Magnus<br />

Photonic Components <strong>Research</strong> at Willander, Magnus Hu, Q.H.<br />

L<strong>in</strong>köp<strong>in</strong>g University<br />

Nour, Omer<br />

Willander, Magnus<br />

Zhao, Qiang X<strong>in</strong>g


Appendix<br />

31<br />

<strong>Research</strong> sub-area/Report<strong>in</strong>g Entity Rapporteur Project Leaders<br />

Quantum Optics <strong>Research</strong> at KTH Björk, Gunnar Björk, Gunnar<br />

Karlsson, Anders<br />

Photonic Devices <strong>Research</strong> at Chalmers Larsson, Anders Galt, Sheila<br />

Larsson, Anders<br />

Rudquist, Per<br />

Wang, Shum<strong>in</strong><br />

Photonic and Microwave Eng<strong>in</strong>eer<strong>in</strong>g Thylén, Lars Anand, Sr<strong>in</strong>ivasan<br />

<strong>Research</strong> at KTH<br />

Bergl<strong>in</strong>d, Eilert<br />

Hammar, Mattias<br />

Jaskorzynska, Bozena<br />

Lourdudoss, Sebastian<br />

Marc<strong>in</strong>kevicius, Saulius<br />

Pasiskevicius, Valdas<br />

Qiu, M<strong>in</strong><br />

Schatz, Richard<br />

Thylén, Lars<br />

Westergren, Urban<br />

Wos<strong>in</strong>ski, Lech<br />

Photonic Materials <strong>Research</strong> at Chalmers Andersson, Thorvald Andersson, Thorvald<br />

System Design<br />

System Design <strong>Research</strong> at KTH Ismail, Mohammed Dubrova, Elena<br />

Ismail, Mohammed<br />

Rusu, Ana<br />

Signell, Svante<br />

Zheng, Li-Rong<br />

System Design <strong>Research</strong> at Lund Yuan, Jiren Nilsson, Peter<br />

University<br />

Sjöland, Henrik<br />

Yuan, Jiren<br />

Öwall, Viktor<br />

System Design <strong>Research</strong> at Chalmers Stenström, Per Hughes, John<br />

Jeppson, Kjell<br />

Larsson-Edefors, Per<br />

Stenström, Per<br />

System Design <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Svensson, Christer Alvandpour, Atila<br />

University<br />

Dabrowski, Jerzy<br />

Eles, Petru<br />

Liu, Dake<br />

Peng, Zebo<br />

Svensson, Christer<br />

Wahab, Qamar-ul<br />

Wanhammar, Lars<br />

Vesterbacka, Mark


32 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

Appendix 2. Outl<strong>in</strong>e of background report<br />

Background report (rapporteur)<br />

Summary<br />

Summary of research with<strong>in</strong> the report<strong>in</strong>g<br />

entity (to be used <strong>in</strong> the report by<br />

the evaluators). L<strong>in</strong>ks can be provided<br />

to one or more webpages where further<br />

background <strong>in</strong>formation of the respective<br />

research groups with<strong>in</strong> the report<strong>in</strong>g<br />

entity can be found.<br />

F<strong>in</strong>ancial Support<br />

F<strong>in</strong>ancial support dur<strong>in</strong>g the period<br />

2003-2007. Please complete the preentered<br />

data with other important<br />

grants (greater than SEK 100 000/year)<br />

were the rapporteur (or the project leader)<br />

is grant holder. Note: Project leaders<br />

have the possibility to provide such <strong>in</strong>formation<br />

<strong>in</strong> the background report under<br />

the tab “Other <strong>in</strong>formation and technical<br />

feedback” (see below).<br />

Scientific results and impact<br />

Field 1. Summarize the most significant<br />

scientific achievements and results for<br />

the period 2003-2007 from your report<strong>in</strong>g<br />

entity.<br />

Field 2. Summarize the most significant<br />

achievements for application/implementation<br />

of results 2003-2007 from<br />

your report<strong>in</strong>g entity (e.g. for <strong>in</strong>dustry or<br />

other sectors of society), eg. patents,<br />

licenses, sp<strong>in</strong>-off companies.<br />

PhD/Lic<br />

PhD/Lic degrees awarded dur<strong>in</strong>g 2003-<br />

2007 and ongo<strong>in</strong>g PhD/Lic projects that<br />

started dur<strong>in</strong>g 2003-2007 for your report<strong>in</strong>g<br />

entity.<br />

Infrastructure<br />

Please describe any larger <strong>in</strong>vestments<br />

(>SEK 2 M) <strong>in</strong> <strong>in</strong>frastructure dur<strong>in</strong>g<br />

2003-2007 for your report<strong>in</strong>g entity.<br />

Are the <strong>in</strong>frastructure/equipment requirements<br />

fulfilled for your report<strong>in</strong>g<br />

entity<br />

Please list the type of expensive<br />

(>SEK 2 M) equipment/<strong>in</strong>frastructure<br />

that is needed for your report<strong>in</strong>g entity<br />

Cooperation and outreach activites<br />

Describe ongo<strong>in</strong>g cooperation with other<br />

research groups and/or with <strong>in</strong>dustry,<br />

eg EU-projects. Write “none” if not applicable.<br />

Describe outreach activities related<br />

to research for your report<strong>in</strong>g entity.<br />

Future<br />

What are the future plans (1-5 years) of<br />

your report<strong>in</strong>g entity and most urgent<br />

needs<br />

Background report (project leader)<br />

Personal data<br />

Please provide personal data, contact<br />

and occupational <strong>in</strong>formation.<br />

<strong>Research</strong> area<br />

Choose one of the areas as primary<br />

area. If work<strong>in</strong>g with<strong>in</strong> two or three areas<br />

choose secondary and tertiary areas.<br />

Publications<br />

Publications 2003-2007 applicable to<br />

microelectronics. It is possible to provide<br />

the 15 most important publications,<br />

the total number of articles, citations,<br />

H-<strong>in</strong>dex, etc. for publications<br />

dur<strong>in</strong>g the period 2003-2007. A web address<br />

to a complete list of publications<br />

can also be provided.<br />

Scientific results<br />

Summarize your most significant scientific<br />

achievements and results for the<br />

period 2003-2007,<br />

Max 1 page. Please note that the<br />

broad aspects of the research with<strong>in</strong><br />

the whole report<strong>in</strong>g entity is submitted<br />

by the rapporteur of your report<strong>in</strong>g entity.<br />

Comments on research <strong>in</strong> Sweden<br />

(<strong>Microelectronics</strong>)<br />

Strengths and weaknesses of <strong>Swedish</strong><br />

research <strong>in</strong>, or close to, your own major<br />

area/s.<br />

Other comments (e.g. with reference<br />

to SSF, VR or V<strong>in</strong>nova).<br />

Other <strong>in</strong>formation and technical<br />

feedback<br />

Other <strong>in</strong>formation, e.g. grants greater<br />

than SEK 100 000/year dur<strong>in</strong>g 2003-<br />

2007 from fund<strong>in</strong>g sources other than<br />

VR, SSF and V<strong>in</strong>nova. Project leaders<br />

are asked to contact their respective<br />

rapporteur to make sure that this additional<br />

<strong>in</strong>formation is transferred to the<br />

f<strong>in</strong>ancial support section of the report.<br />

Technical feedback relat<strong>in</strong>g to the<br />

webform or its format, submission, etc.


Appendix<br />

33<br />

Appendix 3. Executive Summaries provided by the Rapporteurs<br />

Silicon and Wide Bandgap<br />

Components<br />

Silicon <strong>Research</strong> at KTH<br />

We report on 17 graduated PhD students<br />

and a total of 28 <strong>in</strong>volved students<br />

over the report<strong>in</strong>g period. A very<br />

large number of peer-reviewed journal<br />

papers and reviewed conference contributions<br />

have been published. A major<br />

silicon nanoelectronics fabrication platform<br />

was established. The silicon technology<br />

has enabled cross-discipl<strong>in</strong>ary<br />

work with the biotechnology area.<br />

Novel silicon nanowire structures<br />

were demonstrated as sensors for detection<br />

of DNA and other biomolecules.<br />

Nanowire structures are especially <strong>in</strong>terest<strong>in</strong>g<br />

due to their enhanced sensitivity.<br />

Studies to advance porous silicon by<br />

RIE have lead to a sp<strong>in</strong>-out company<br />

Sc<strong>in</strong>t-X, develop<strong>in</strong>g highly sensitive X-ray<br />

detectors. Carbon nanotubes were<br />

studied and a novel approach for controllable<br />

site-selective assembly was<br />

established by means of an AC dielectrophoreses<br />

allow<strong>in</strong>g efficient manipulation<br />

of semiconduct<strong>in</strong>g s<strong>in</strong>gle wall CNTs.<br />

The DNA sensor activity has lead to a<br />

patent proposal and is under evaluation<br />

for a commercialization grant. For the<br />

SiC device research projects breakthrough<br />

results were achieved by the<br />

publication of the first bipolar transistor<br />

to demonstrate high breakdown voltage<br />

and hav<strong>in</strong>g a high current ga<strong>in</strong>. The research<br />

enabled a sp<strong>in</strong>-out of a new<br />

company TranSiC, produc<strong>in</strong>g a discrete<br />

SiC bipolar transistor and modules. The<br />

funded research areas have been successful<br />

<strong>in</strong> establish<strong>in</strong>g a lead<strong>in</strong>g experimental<br />

foundation for the future needs<br />

<strong>in</strong> the nanoelectronics area globally<br />

Silicon <strong>Research</strong> at Uppsala University<br />

In a nutshell the backbone of the research<br />

of this entity can be summarized<br />

as synthesis of electronic materials on<br />

the one hand as well as modell<strong>in</strong>g, design,<br />

fabrication and characterization of<br />

discrete electronic components on the<br />

other. The first category <strong>in</strong>cludes:<br />

a) Th<strong>in</strong> piezoelectric films (I.Katardjiev)<br />

b) Synthesis of CIGS and related materials<br />

for solar cells (Marika Edoff)<br />

c) SOI materials (J.Olsson)<br />

d) Gate stack materials (J.Olsson)<br />

e) Ferroelectric materials (I.Katardjiev)<br />

The largest materials research activities<br />

are CIGS and th<strong>in</strong> piezoelectric films.<br />

The CIGS activity, however, despite be<strong>in</strong>g<br />

a world leader <strong>in</strong> CIGS solar cells, is<br />

not <strong>in</strong>cluded <strong>in</strong> this evaluation due to its<br />

ma<strong>in</strong> fund<strong>in</strong>g com<strong>in</strong>g from the Department<br />

of Energy. In this category is also<br />

the world lead<strong>in</strong>g research of S.Berg<br />

who has developed a fundamental description<br />

of sputter PVD processes<br />

which expertise is then applied to all<br />

materials research with<strong>in</strong> the entity.<br />

The second group of activities <strong>in</strong>cludes<br />

a) High power, high frequency LDMOS<br />

transistors (J.Olsson)<br />

b) Solar cell modules (M.Edoff)<br />

c) Microwave electro-acoustic components<br />

such as resonators, filters,<br />

oscillators, etc (I.Katardjiev)<br />

d) Physical and biochemical electroacoustic<br />

sensors (I.Katardjiev)<br />

e) Components on hybrid Si/SiC substrates<br />

(J.Olsson)<br />

f) Integrated antennas (A.Rydberg)<br />

In all of the activities above the project<br />

leaders hold lead<strong>in</strong>g positions <strong>in</strong> their<br />

respective areas <strong>in</strong> the world.<br />

Silicon Carbide <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g<br />

University<br />

We are focused on growth and characterization<br />

of wide bandgap semiconductors,<br />

primarily SiC, GaN, AlGaN and AlN.<br />

We develop new growth techniques, like<br />

chloride-based SiC growth and hot-wall<br />

MOCVD growth of III-nitrides, often <strong>in</strong><br />

collaboration with <strong>in</strong>dustry. We characterize<br />

our grown wafer as feedback to<br />

the growth but also as a help to understand<br />

device property variations for devices<br />

from the same wafer. We also do<br />

fundamental defect physics, which has<br />

been very helpful <strong>in</strong> understand<strong>in</strong>g the<br />

properties of semi-<strong>in</strong>sulat<strong>in</strong>g SiC substrates.<br />

The driv<strong>in</strong>g forces for our materials<br />

research have been high-voltage,<br />

SiC power devices (thick low-doped epitaxial<br />

layers with excellent morphology,<br />

fast epitaxial growth, long carrier lifetime,<br />

bipolar degradation) and high-power,<br />

high-frequency devices (AlGaN/GaN<br />

HEMT structures, large-area uniformity,<br />

transport properties of the 2DEG, semi<strong>in</strong>sulat<strong>in</strong>g<br />

buffer layer, semi-<strong>in</strong>sulat<strong>in</strong>g<br />

SiC substrates, <strong>in</strong>tr<strong>in</strong>sic defects).<br />

Dur<strong>in</strong>g the next 5 years we plan to<br />

re-enter <strong>in</strong>to the SiC bulk growth field,<br />

this time us<strong>in</strong>g chlor<strong>in</strong>ated precursors<br />

<strong>in</strong> a HTCVD process and extend our IIInitride<br />

activities <strong>in</strong>to the high-power,<br />

deep-UV emission area but still keep<br />

our <strong>in</strong>terest for high-voltage and highfrequency<br />

devices. As before we will


34 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

only do the materials research and collaborate<br />

with groups at Chalmers for<br />

design, process<strong>in</strong>g and evaluation of<br />

high-frequency and deep-UV emission<br />

devices and with Acreo for high-voltage,<br />

power devices.<br />

Gallium Nitride <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g<br />

University<br />

The research <strong>in</strong> this environment (the<br />

Materials Science Division at IFM) is focused<br />

on experimental development of<br />

growth techniques for wide bandgap<br />

semiconductors and experimental studies<br />

of material properties related to<br />

electronic and optical applications. We<br />

are well equipped with about 50 laboratories<br />

for structural, optical, electrical,<br />

magnetic studies etc, mostly <strong>in</strong> clean<br />

room environment. The research is performed<br />

<strong>in</strong> a well developed <strong>in</strong>ternational<br />

collaboration for all projects. The<br />

projects discussed here concern four<br />

categories of materials: III-nitrides,<br />

magnetic semiconductor structures, SiC<br />

and III-V-nitrides, all <strong>in</strong>ternationally attractive<br />

areas presently.<br />

The growth work <strong>in</strong>cluded here concerns<br />

development of bulk GaN boules<br />

and wafers based on HVPE technology.<br />

We have succeeded <strong>in</strong> grow<strong>in</strong>g several<br />

mm thick boules of GaN with a dislocation<br />

density < 10 6 cm –2 . Additional studies<br />

of material properties <strong>in</strong>clude bulk<br />

GaN, InGaN- and AlGaN-related QWs<br />

and superlattices, nonpolar epilayers,<br />

InN and AlInN. The magnetic structures<br />

studied <strong>in</strong>clude InGaN/GaMnN,<br />

ZnMgSe/ZnCdSe, and ZnO related<br />

structures. Mechanisms for sp<strong>in</strong> <strong>in</strong>jection,<br />

sp<strong>in</strong> transfer and sp<strong>in</strong> detection <strong>in</strong><br />

these structures have been elucidated.<br />

Intr<strong>in</strong>sic defects <strong>in</strong> SiC have been identified.<br />

Their role for the electronic properties<br />

have been clarified. The III-V-N<br />

materials <strong>in</strong>clude GaInNP and GaInNAs<br />

with related QW structures. Band structure,<br />

defects, and H passivation have<br />

been studied <strong>in</strong> detail.<br />

Silicon <strong>Research</strong> at Chalmers<br />

The research activities at Chalmers, reported<br />

here, arise from two different research<br />

laboratories at the Department<br />

of Microtechnology and NanoScience<br />

(MC2). Enoksson, Lundgren and Bengtsson<br />

(also Vice Rector of Chalmers) belong<br />

to the BioNanoSystems Laboratory,<br />

while Engström is part of the<br />

Laboratory of Physical Electronics.<br />

Spann<strong>in</strong>g across an area <strong>in</strong>clud<strong>in</strong>g thermal<br />

wafer bond<strong>in</strong>g, nanogaps for molecular<br />

attachment, carbon nanotubes<br />

for <strong>in</strong>tegration <strong>in</strong>to CMOS technology<br />

and for AFM/TEM applications, MEMS<br />

based sensors, biodetectors, quantum<br />

dots, silicon nanowires and high-k-dielectrics,<br />

it seems reasonable that this<br />

collected knowledge should be more alloyed<br />

than it is presently. As can be<br />

seen below, the activities by Bengtsson,<br />

Lundgren and Enoksson have<br />

l<strong>in</strong>ks, while Engström’s research has<br />

been separate from those efforts as he<br />

restarted this k<strong>in</strong>d of activities <strong>in</strong> 2003<br />

after a 7 years period of managerial<br />

work at Chalmers. Discussions are ongo<strong>in</strong>g<br />

to f<strong>in</strong>d ways of a closer collaboration<br />

between silicon related works go<strong>in</strong>g<br />

on at MC2. (See also reports from Johan<br />

Liu and Göran Wend<strong>in</strong>.) At the hear<strong>in</strong>g<br />

<strong>in</strong> April, results from these measures<br />

will be available.<br />

High Speed Electronics<br />

Microwaves <strong>Research</strong> at Chalmers<br />

Our research is focused on electronic<br />

components and circuits for applications<br />

from low GHz to THz frequencies utiliz<strong>in</strong>g<br />

semiconductor technologies. We are<br />

founded to approximately 80 % by external<br />

research agencies such as SSF, V<strong>in</strong>nova,<br />

VR, FMV, SNSB, FOI, ESTEC, EU<br />

etc and, <strong>in</strong> addition, <strong>in</strong>dustry. We are<br />

runn<strong>in</strong>g two centres of excellence, namely<br />

the V<strong>in</strong>nova ”GHz-Centre”, and the<br />

SSF Strategic <strong>Research</strong> Centre <strong>in</strong> High<br />

Speed Electronics and Photonics. Our<br />

experimental facilities <strong>in</strong>clude a very well<br />

equipped clean room facility, and several<br />

microwave and millimeterwave measurement<br />

labs. Many of our research<br />

projects are f<strong>in</strong>anced and performed together<br />

with the <strong>in</strong>dustry.<br />

Our research <strong>in</strong>clude <strong>in</strong> most cases<br />

device simulation, fabrication, characterization,<br />

modell<strong>in</strong>g, and circuit design.<br />

Our <strong>in</strong> house processes <strong>in</strong>clude Indium<br />

Phosphide based High Electron Mobility<br />

Transistors (HEMTs) for low noise and<br />

low power applications at frequencies<br />

from less then 1 GHz to several hundreds<br />

of GHz. For high power applications,<br />

we are <strong>in</strong>vestigat<strong>in</strong>g wide-bandgap<br />

(WBG) semiconductors such as<br />

Silicon Carbide (SiC) and Gallium Nitride<br />

(GaN). At the moment SiC MESFETs,<br />

SiC-MOSFETs, SiC diodes, and AlGan-<br />

GaN HEMTs are fabricated <strong>in</strong> our clean<br />

room. We are also develop<strong>in</strong>g MMICs<br />

(Microwave Monolithic Integrated Circuits)<br />

based on these device and external<br />

foundry processes. The process <strong>in</strong>clude<br />

airbridge, via-hole,<br />

overlay-capacitor, spiral <strong>in</strong>ductance,<br />

th<strong>in</strong>-film resistor and semiconductor resistor.<br />

Terahertz Systems <strong>Research</strong><br />

at Chalmers<br />

Our research at the Physical Electronics<br />

Laboratory is focused on new materials,<br />

devices and sub-systems for applications<br />

<strong>in</strong> the frequency range 10 GHz –<br />

10 THz or the correspond<strong>in</strong>g wavelength<br />

range 30 µm – 3 cm. This is an emerg<strong>in</strong>g<br />

part of the electromagnetic spectrum<br />

where optical and microwave techniques<br />

meet.


Appendix<br />

35<br />

We fabricate novel devices <strong>in</strong> our<br />

state-of-the-art Nanofabrication facility<br />

and evaluate these <strong>in</strong> various circuit<br />

demonstrators. We carry out research<br />

on new materials for active and passive<br />

circuits. Our research f<strong>in</strong>ds applications<br />

<strong>in</strong> receivers and transmitters for future<br />

radar sensors, THz-imag<strong>in</strong>g systems,<br />

radio astronomy and remote sens<strong>in</strong>g,<br />

and future wireless communication systems.<br />

We take advantage of advanced CAE<br />

tools and a top-class microwave and terahertz<br />

characterisation facility.<br />

Nanoelectronics<br />

Nanotubes <strong>Research</strong> at Chalmers<br />

The carbon nanotube research <strong>in</strong> Sweden<br />

is very much concentrated <strong>in</strong><br />

Gothenburg where there are a number<br />

of experimental and theoretical activities.<br />

The carbon nanotube related research<br />

<strong>in</strong> Gothenburg with<strong>in</strong> the area of<br />

microelectronics has focused on the<br />

study of nanoelectromechanical devices.<br />

This has ranged from very fundamental<br />

theoretical studies of quantum<br />

mechanical effects <strong>in</strong> suspended nanotubes<br />

to fundamental studies of transport<br />

(both electronic and mass) <strong>in</strong><br />

<strong>in</strong>dividual nanotubes and more applications-oriented<br />

studies of nanotubebased<br />

NEMS on chip. The theoretical<br />

and experimental work is carried out <strong>in</strong><br />

close collaboration and provides a fruitful<br />

cross-fertilisation of ideas. The study<br />

of <strong>in</strong>dividual nanotubes is essential to<br />

develop a clear understand<strong>in</strong>g of the<br />

properties and potential of nanotubebased<br />

devices. Much of the research<br />

activity has concentrated on develop<strong>in</strong>g<br />

ways to grow and manipulate nantotubes<br />

to allow the controlled fabrication<br />

of devices on-chip. The further development<br />

of tools to manipulate and analyse<br />

<strong>in</strong>dividual nanotubes has also been<br />

a major activity. The comb<strong>in</strong>ation of<br />

scann<strong>in</strong>g probe microscopy and TEM<br />

provides an ideal tool for manipulat<strong>in</strong>g<br />

and study<strong>in</strong>g mechanical and electrical<br />

properties of <strong>in</strong>dividual nanotubes<br />

Quantum Electronics <strong>Research</strong> at<br />

Chalmers<br />

The microelectronics research reported<br />

here addresses nano- and quantum-devices<br />

and can be divided <strong>in</strong>to 5 subareas:<br />

• S<strong>in</strong>gle electron devices and qubits<br />

(Dels<strong>in</strong>g et al)<br />

• Molecular electronics (Kubatk<strong>in</strong> et<br />

al)<br />

• High Tc devices (Lombardi/Claeson<br />

et al)<br />

• THz-Bolometers (Kuzm<strong>in</strong> et al)<br />

• Theory (Wend<strong>in</strong> et al)<br />

We study fundamental questions about<br />

how nanodevices can be described, fabricated,<br />

and utilized. In many cases we<br />

operate at low temperatures and with<br />

superconduct<strong>in</strong>g devices. Applied<br />

projects relate to very sensitive measurement<br />

methods and sensors.<br />

A very important <strong>in</strong>frastructure for our<br />

research is the well equipped nano fabrication<br />

laboratory at MC2. This gives<br />

us a clear advantage compared to other<br />

groups.<br />

We have for many years been well<br />

supported by SSF, but we can see that<br />

the support from SSF is decreas<strong>in</strong>g.<br />

Fortunately, with a new L<strong>in</strong>né grant from<br />

VR, we have been able to cont<strong>in</strong>ue at<br />

approximately the same level.<br />

Dur<strong>in</strong>g the report<strong>in</strong>g period our environment<br />

has produced 120 scientific<br />

papers of which 2 <strong>in</strong> Nature, 1 <strong>in</strong> Science,<br />

10 <strong>in</strong> PRL, 2 <strong>in</strong> NanoLetters and<br />

1 <strong>in</strong> Nature Physics.<br />

It is important to note that substantial<br />

parts of the NANODEV centre are<br />

reported elsewhere.<br />

The activities of Shekhter, Gorelik,<br />

and Jonson are reported by Campbell<br />

The activities of Bengtsson, Enoksson<br />

and Engström are reported by Engström<br />

The activities of Haviland are reported<br />

by himself<br />

Nanostructure Physics <strong>Research</strong><br />

at KTH<br />

Nanostructure physics at KTH is a<br />

group consist<strong>in</strong>g of two professors, one<br />

technician (50 %) and typically 1-2 postdocs,<br />

5-7 Graduate students, and about<br />

the same number of undergraduate<br />

project workers annually. We work on a<br />

broad spectrum of research, from applied<br />

microelectronics with commercial<br />

companies, to more fundamental, long<br />

term projects at the boarder between<br />

physics, biology and microelectronics.<br />

We have built up first class fabrication<br />

and measurement facilities, whose<br />

functionality has been well proven by<br />

the large number of students from other<br />

groups who rely on our open laboratory<br />

facilities. Our own research with Sp<strong>in</strong>tronics<br />

and with micro resonators has<br />

generated IP which we are presently develop<strong>in</strong>g.<br />

We have made many important<br />

scientific contributions to our fields<br />

of research. Highlights for the period<br />

2003-2007 are:<br />

• 11 letter publications <strong>in</strong> “high impact”<br />

journals, e.g. PRL, APL, Nanoletters,<br />

JACS.<br />

• 23 longer publications <strong>in</strong> refereed<br />

scientific Journals.<br />

• 15 <strong>in</strong>vited talks at <strong>in</strong>ternational conferences<br />

and workshops.<br />

• 35+ <strong>in</strong>vited sem<strong>in</strong>ars or department<br />

colloquium and visits.<br />

• 6 PhD students graduated, 5 work<strong>in</strong>g<br />

<strong>in</strong> <strong>Swedish</strong> High Tech <strong>in</strong>dustry.<br />

• 3 patents


36 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

Nanometer Structures <strong>Research</strong><br />

at Lund University<br />

We have <strong>in</strong> the last five years been able<br />

to position ourselves as one of the<br />

lead<strong>in</strong>g laboratories <strong>in</strong> the fields of<br />

semiconductor growth (epitaxy), <strong>in</strong> advanced<br />

materials characterization, <strong>in</strong><br />

basic device physics, and have applied<br />

this to the development of completely<br />

novel device and circuit concepts, <strong>in</strong><br />

electronics as well as <strong>in</strong> opto-electronics.<br />

This is illustrated by our strong<br />

presence <strong>in</strong> lead<strong>in</strong>g <strong>in</strong>ternational conferences<br />

(> 150 <strong>in</strong>vited/plenary talks) and<br />

<strong>in</strong> us lead<strong>in</strong>g the primary EU-project <strong>in</strong><br />

the field of “Emerg<strong>in</strong>g Nanoelectronics”.<br />

A strong focus has been on semiconductor<br />

nanowires from the po<strong>in</strong>t of view<br />

of understand<strong>in</strong>g growth mechanisms<br />

and how this understand<strong>in</strong>g enables superior<br />

device fabrication. Of special importance<br />

has been our break-through <strong>in</strong><br />

controll<strong>in</strong>g the formation of highly perfect<br />

and atomically abrupt hetero-structures<br />

with<strong>in</strong> III-V nanowires, by which<br />

many k<strong>in</strong>ds of quantum- and nanobased<br />

devices have been demonstrated<br />

with<strong>in</strong> our entity, such as s<strong>in</strong>gle-electron<br />

devices and memories, resonant<br />

tunnell<strong>in</strong>g devices, wrap-gated field-effect<br />

transistors, quantum-dot emitters<br />

and light-emitt<strong>in</strong>g nanowire structures<br />

for LEDs <strong>in</strong> general. We have also made<br />

significant progress <strong>in</strong> the fields of<br />

nano-mechanics and nano-fluidics, <strong>in</strong><br />

both case primarily of relevance for bioapplications.<br />

Organic Electronics<br />

Organic Electronics <strong>Research</strong> at<br />

L<strong>in</strong>köp<strong>in</strong>g University<br />

We have developed organic nanoelectronics<br />

through the use of microfluidic<br />

methods for assembly of micro-nanostructures,<br />

and by us<strong>in</strong>g misfolded prote<strong>in</strong><br />

fibres <strong>in</strong> the form of amyloid, as a<br />

template for assembly of semiconduct<strong>in</strong>g,<br />

lum<strong>in</strong>escent or metallic polymers.<br />

Device functions have been demonstrated<br />

with these materials, also with<br />

enhancement of performance, <strong>in</strong> light<br />

emitt<strong>in</strong>g diodes with <strong>in</strong>cluded amyloid.<br />

The use of photochromic molecules <strong>in</strong><br />

semiconduct<strong>in</strong>g polymer blends allow<br />

light manipulation of charge transport<br />

through diodes. Detailed studies of a<br />

class of devices, diodes exhibit<strong>in</strong>g electrical<br />

memory functions, has demonstrated<br />

the reversible formation and destruction<br />

of metallic shorts through<br />

such devices, cast<strong>in</strong>g doubt on exist<strong>in</strong>g<br />

models of electrical memory devices.<br />

We have enhanced the functions of<br />

polymer solar cells by enhanc<strong>in</strong>g light<br />

<strong>in</strong>coupl<strong>in</strong>g. The three methods to enhance<br />

light absorption, through nanostructured<br />

electrodes giv<strong>in</strong>g photon-plasmon<br />

coupl<strong>in</strong>g, through microlenses<br />

focus<strong>in</strong>g and trapp<strong>in</strong>g light, and through<br />

folded reflective and tandem solar cells<br />

on the milliscale, are all operational,<br />

but the folded cells give the highest <strong>in</strong>crease<br />

of efficiency, by 1.8 times. With<br />

our best materials, we reach s<strong>in</strong>gle cell<br />

efficiencies of 4 %, which may enable<br />

us to fold tandem cells to arrive at 7 %<br />

efficiency (not yet demonstrated).<br />

Paper Electronics <strong>Research</strong> at<br />

L<strong>in</strong>köp<strong>in</strong>g University<br />

The activities <strong>in</strong> the Organic Electronics<br />

group, at LiU, and at Acreo, <strong>in</strong> Norrköp<strong>in</strong>g,<br />

are conducted <strong>in</strong> the spirit of<br />

develop<strong>in</strong>g organic electronic devises<br />

<strong>in</strong>clud<strong>in</strong>g electrons, molecules and liquids<br />

as the signal carriers for novel applications<br />

target<strong>in</strong>g pr<strong>in</strong>ted electronics<br />

and bioelectronics.<br />

Pr<strong>in</strong>ted electronics: Our vision is to<br />

convert manufactur<strong>in</strong>g of electronics<br />

from a batch-based process technology<br />

to a reel-to-reel manufactur<strong>in</strong>g technology,<br />

similar to how we pr<strong>in</strong>t on paper today.<br />

To achieve this we need to explore<br />

electronic materials that can be processed<br />

from solutions and our choice is<br />

organic electronic materials. On the application<br />

side, we are explor<strong>in</strong>g us<strong>in</strong>g<br />

pr<strong>in</strong>ted electronics primarily on paper<br />

products, specifically on packages, media<br />

surfaces and labels.<br />

Bioelectronics: Our vision is to<br />

bridge the gap <strong>in</strong> between manmade<br />

electronics and biology us<strong>in</strong>g organic<br />

electronic devices that can perform signal<br />

process<strong>in</strong>g of bio-molecules as well<br />

as electrons. In this context, we presently<br />

develop biochemical circuits that<br />

can translate electronic signals <strong>in</strong>to biological<br />

equivalences <strong>in</strong> order to regulate<br />

and record signall<strong>in</strong>g <strong>in</strong> biology. We particularly<br />

focus on the area of electronic<br />

control of <strong>in</strong>tracellular signall<strong>in</strong>g, stem<br />

cell differentiation and neuronal signall<strong>in</strong>g.<br />

Photonics<br />

Photonic Communication <strong>Research</strong><br />

at Chalmers<br />

Our research <strong>in</strong> fibre optics addresses<br />

three ma<strong>in</strong> areas: High-capacity and<br />

high spectral efficiency digital communications,<br />

all-optical functionalities, and<br />

microwave photonics. In the report<strong>in</strong>g<br />

period we have presented about 25 <strong>in</strong>vited<br />

papers at lead<strong>in</strong>g events,<br />

launched one sp<strong>in</strong>-off company, and<br />

produced 6 PhDs. We have recovered<br />

from the telecom bubble and see significant<br />

new opportunities of growth from<br />

synergies with other groups at Chalmers,<br />

with<strong>in</strong> EU project, as well as outside<br />

Europe. We foresee research on<br />

co-optimization of optics, electronics,<br />

and algorithms as a new paradigm shift<br />

for next generation optical network<strong>in</strong>g.<br />

On a more fundamental level, as an ex-


Appendix<br />

37<br />

ample, we envision very <strong>in</strong>trigu<strong>in</strong>g performance<br />

and applications of phasesensitive<br />

optical parametric amplifier<br />

(for example the potential for 0 dB<br />

noise figure). Our test and measurement<br />

laboratory has been upgraded<br />

substantially with specific grants<br />

amount<strong>in</strong>g to SEK 6.5 M, such that it<br />

now has the highest <strong>in</strong>ternational standard.<br />

This has <strong>in</strong>directly contributed to<br />

our success <strong>in</strong> the recent Photonics EU-<br />

FP7 call where we ranked 1 (!) out of<br />

the 134 STREP submissions as well as<br />

facilitat<strong>in</strong>g us to become an attractive<br />

partner also outside Europe. An example<br />

is our recently established significant<br />

jo<strong>in</strong>t research activity with UC San<br />

Diego, USA, and we expect to strengthen<br />

this.<br />

Photonic Components <strong>Research</strong> at<br />

L<strong>in</strong>köp<strong>in</strong>g University<br />

The goals with this program was to<br />

make device quality ZnO materials,<br />

ma<strong>in</strong>ly nanorods, for optical applications,<br />

LEDs and lasers, grown on silicon<br />

substrates. This besides the growth on<br />

other s<strong>in</strong>gle crystal substrates likes<br />

sapphire, SiC. In addition, amorphous<br />

substrates e.g. SiO 2<br />

, glass etc are all of<br />

<strong>in</strong>terests, add<strong>in</strong>g to that the immense<br />

<strong>in</strong>terest of flexible substrates, e.g. plastic<br />

electronics. The second task is to<br />

characterize all the grown nano-rods to<br />

<strong>in</strong>sure the suitability of these nanorods<br />

for optical application. In addition demonstration<br />

of new photonic devices<br />

based on ZnO nanorods was the f<strong>in</strong>al<br />

stage of the experimental planned work.<br />

As a sp<strong>in</strong> off effect it is also expected<br />

to come out some new physics which<br />

can be used for applications. Z<strong>in</strong>c oxide<br />

was chosen due to its unique properties<br />

as extremely high exciton b<strong>in</strong>d<strong>in</strong>g<br />

energy, strong photon exciton coupl<strong>in</strong>g,<br />

and possibility to grow crystall<strong>in</strong>e ZnO<br />

on different lattice mismatched or<br />

amorphous substrates by catalytic<br />

growth.<br />

All the above goals have been<br />

achieved as demonstrated through publications<br />

and/or patents.<br />

Quantum Optics <strong>Research</strong> at KTH<br />

The report<strong>in</strong>g entity consists of two senior<br />

researchers, Profs. Gunnar Björk<br />

(rapporteur) and Anders Karlsson.<br />

The field of research is quantum <strong>in</strong>formation<br />

(<strong>in</strong> particular quantum key<br />

distribution) and quantum optics (<strong>in</strong> particular<br />

applications of entanglement<br />

and its characterization). Notable results<br />

is the early demonstration of a full<br />

plug-and-play quantum cryptography<br />

system transmitt<strong>in</strong>g over 60 km of optical<br />

fibre at the standard telecom wavelength<br />

of 1.55 micrometer, the demonstration<br />

of non-locality of a s<strong>in</strong>gle<br />

photon, the development of periodically<br />

poled non-l<strong>in</strong>ear crystals (KTP) for the<br />

efficient generation of photon-pairs, and<br />

methods for a simple estimation of bipartite<br />

entanglement us<strong>in</strong>g only local<br />

measurements. The research has been<br />

both of theoretical and of experimental<br />

nature.<br />

The total research grants awarded<br />

dur<strong>in</strong>g the period is roughly SEK 32 M<br />

(SEK 18 M SSF, SEK 7.1 M VR, SEK 6.4<br />

M EU, SEK 0.8 M STINT).<br />

Dur<strong>in</strong>g the period four PhD theses<br />

have been awarded <strong>in</strong> the area, a fifth<br />

is almost completed, and a sixth is<br />

about half-way.<br />

The research has resulted <strong>in</strong> 39 papers<br />

<strong>in</strong> peer reviewed <strong>in</strong>ternational journals<br />

and 19 <strong>in</strong>vited talks at <strong>in</strong>ternational<br />

conferences.<br />

Photonic Devices <strong>Research</strong> at<br />

Chalmers<br />

Optoelectronics:<br />

Major achievements <strong>in</strong> GaAs-based VC-<br />

SELs at 850 and 1300 nm, <strong>in</strong>clud<strong>in</strong>g:<br />

1) a comprehensive model for VCSEL<br />

design and analysis, 2) a superior technique<br />

for mode and polarization control,<br />

result<strong>in</strong>g <strong>in</strong> record high s<strong>in</strong>gle mode<br />

power, 3) high speed VCSELs for optical<br />

communication l<strong>in</strong>ks.<br />

Optically pumped long wavelength<br />

(1550 nm) semiconductor disk lasers<br />

were developed us<strong>in</strong>g the InP material<br />

system. Record high output power, comb<strong>in</strong>ed<br />

with excellent beam quality was<br />

obta<strong>in</strong>ed. Short, high power pulses<br />

were generated at high repetition rates<br />

us<strong>in</strong>g mode-lock<strong>in</strong>g.<br />

Dilute nitride lasers on GaAs were<br />

developed for high speed, high temperature<br />

operation. GaInNAs lasers emitt<strong>in</strong>g<br />

at 1.3 µm exhibited record low threshold<br />

currents with very small temperature<br />

dependence and record modulation<br />

bandwidths. Operation at high bit rates<br />

at elevated temperatures was demonstrated.<br />

Metamorphic long wavelength In-<br />

GaAs lasers on GaAs were demonstrated,<br />

<strong>in</strong>clud<strong>in</strong>g record performance at 1.3<br />

µm and the first 1.55 µm laser.<br />

Optics:<br />

New types of photonic analog-to-digital<br />

converters (ADCs) were successfully<br />

demonstrated, <strong>in</strong>clud<strong>in</strong>g a spectrometer<br />

based ADC, an <strong>in</strong>terferometer based<br />

ADC, and a photonic time-stretcher.<br />

Liquid crystals:<br />

Lead<strong>in</strong>g work on ferro- and antiferroelectric<br />

liquid crystals (LCs) with major<br />

achievements <strong>in</strong> fundamental physics<br />

(e.g. surface <strong>in</strong>teractions) and device<br />

physics (e.g. multi-level phase and amplitude<br />

modulation and ultra-sensitive<br />

detection).<br />

Photonic and Microwave Eng<strong>in</strong>eer<strong>in</strong>g<br />

<strong>Research</strong> at KTH<br />

The entity research comprises a


38 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

number of fields, some of which at the<br />

<strong>in</strong>ternational forefront. The research<br />

has largely been renewed, <strong>in</strong> response<br />

to emerg<strong>in</strong>g novel fields and visions of<br />

project leaders, and is well <strong>in</strong> tune with<br />

<strong>in</strong>ternational ma<strong>in</strong>stream, evidenced by<br />

the many <strong>in</strong>vited papers and talks. This<br />

advantageous situation is, especially<br />

for semiconductor material and device<br />

technology, a result of visionary fund<strong>in</strong>g<br />

start<strong>in</strong>g <strong>in</strong> the mid 70s. This legacy is <strong>in</strong><br />

danger of be<strong>in</strong>g squandered. Photonics<br />

is a prioritized area <strong>in</strong> EU (evidenced by<br />

Photonics21) and research with<strong>in</strong> the<br />

entity covers a number of the areas <strong>in</strong><br />

the Photonics21 strategy document: Integrated<br />

photonics, where we have a<br />

long track record. This field <strong>in</strong>cludes<br />

photonic crystals, where state of the art<br />

experimental and theory work has been<br />

accomplished as well as state of the art<br />

Si <strong>in</strong>tegrated photonics technology and<br />

the new projects on plasmonics. L<strong>in</strong>ked<br />

to these are projects on material technology<br />

such as heteroepitaxi of InP on<br />

Si and state of the art hydride VPE.<br />

Here are also the rather recent metamaterial<br />

research and functional materials<br />

with tailored l<strong>in</strong>ear and nonl<strong>in</strong>ear<br />

properties for photonics l<strong>in</strong>k<strong>in</strong>g several<br />

projects. VCSEL 1.3 µm technology and<br />

high speed electroabsorbtion modulators<br />

are other areas <strong>in</strong> the <strong>in</strong>ternational<br />

forefront. Basic research on dynamics<br />

and coherence properties <strong>in</strong> low dimensional<br />

semiconductors (relevant <strong>in</strong> its<br />

own right) can give new functionality to<br />

<strong>in</strong>tegrated photonics.<br />

Photonic Materials <strong>Research</strong> at<br />

Chalmers<br />

The research unit consists of a group<br />

that moved from the department of<br />

physic to MC2 a few years ago.<br />

The group has two commercial MBEsystems<br />

for III-V growth and characterisation<br />

of layers. This characterisation<br />

equipment is Hall effect, PL (not work<strong>in</strong>g)<br />

and equipment for CV- and IV-measurements.<br />

We also has access to the<br />

characterisation <strong>in</strong> the MC2 clean room<br />

(XRD and AFM).<br />

The second part is research on molecule<br />

layers grown by thermal evaporation.<br />

This started about 5 years ago. We<br />

use a low vacuum evaporation system<br />

were know-how from the MBE-technology<br />

has been used. One of the MBE-chambers<br />

has an organic UHV-chamber connected<br />

but we have no money to run it<br />

The group has consisted of typically<br />

ten persons. The group size has slowly<br />

decreased (with reduction of f<strong>in</strong>ancial resources)<br />

and is presently only three persons<br />

(plus 2-4 master students).<br />

System Design<br />

System Design <strong>Research</strong> at KTH<br />

The report<strong>in</strong>g entity conducts cutt<strong>in</strong>g<br />

edge research <strong>in</strong> micro-/nano-electronic<br />

systems spann<strong>in</strong>g a wide range of topics<br />

carefully chosen to contribute to areas<br />

of strategic <strong>in</strong>terest to <strong>Swedish</strong> <strong>in</strong>dustry<br />

and to achieve the mission of<br />

KTH as a lead<strong>in</strong>g world class research<br />

<strong>in</strong>stitute. Over the report<strong>in</strong>g period of<br />

<strong>in</strong>terest, the entity cont<strong>in</strong>ued the tradition<br />

of be<strong>in</strong>g a world leader and one of<br />

the first groups <strong>in</strong> Europe, <strong>in</strong>deed the<br />

world, to <strong>in</strong>itiate and lead research <strong>in</strong><br />

the area of:<br />

1) Low power CMOS radio and mixed<br />

signal design for convergent wireless<br />

handhelds<br />

2) Low power digital design, chip communication<br />

and <strong>in</strong>terconnect design<br />

techniques for system- and networkon-chip<br />

3) EDA tools development for design<br />

space exploration and optimization<br />

of RF and mixed signal circuits and<br />

systems<br />

4) System-<strong>in</strong>-package and <strong>in</strong>tegrated<br />

technologies for <strong>in</strong>telligent paper<br />

and for wearable medical devices<br />

The work strikes a good balance theory<br />

and practice. One application is development<br />

of low power small form factor<br />

chipsets for high volume low cost cognitive<br />

radios (SDRs) and wireless systems<br />

(cellular,WLAN/WiMAX, RFID, etc.), from<br />

end-to-end, i.e. RF, digital baseband/<br />

MAC as well as the front end passives.<br />

The methodologies are applied to wirel<strong>in</strong>e<br />

communications, multimedia, <strong>in</strong>telligent<br />

paper technology and medical applications.<br />

The work contributes to<br />

robust nano-scale <strong>in</strong>tegration, digitally<br />

programmable/configurable RF and<br />

mixed signal IPs and statistical design<br />

for yield enhancement.<br />

System Design <strong>Research</strong> at Lund<br />

University<br />

CCCD is dedicated to circuit and system-on-chip<br />

design for future wireless<br />

communications. When technology is<br />

scaled down, low supply voltage poses<br />

a greatly challenge to receiver dynamic<br />

range, l<strong>in</strong>earity and transmitter output<br />

power. For ADC and DAC, sampl<strong>in</strong>g<br />

accuracy, dynamic range, speed, resolution<br />

and glitch are gett<strong>in</strong>g more troublesome.<br />

In digital doma<strong>in</strong>, high process<strong>in</strong>g<br />

speed and capability, low leakage,<br />

high efficiency, low cost and low switch<strong>in</strong>g<br />

noise are most wanted. In addition,<br />

high flexibility and low digital-to-analog<br />

<strong>in</strong>terference are also extremely important.<br />

The projects of CCCD research program<br />

are therefore ma<strong>in</strong>ly focused on<br />

the above topics (not limited to), such<br />

as: P1-Monolithic Transceivers (l<strong>in</strong>earization,<br />

low voltage, low cost, adaptive<br />

and multiple antenna, beam form<strong>in</strong>g<br />

etc.); P2-Mixed Signal Circuit Design<br />

(high speed and wide dynamic range


Appendix<br />

39<br />

ADC, low glitch and low image <strong>in</strong>terpolation<br />

DAC, silent CMOS circuits etc); P3-<br />

Digital Build<strong>in</strong>g Blocks for Wireless Systems<br />

(distributed asynchronous custom<br />

DSP-systems, algorithm/HW co-design,<br />

algorithms for adaptive antenna etc.);<br />

P6-Flexible Term<strong>in</strong>al for Wireless Systems<br />

(reconfigurable RF front-end and<br />

ADC, flexible cod<strong>in</strong>g/decod<strong>in</strong>g and<br />

baseband circuitry, hardware for MIMO<br />

etc.). Besides, P4-Digital Holographic<br />

Imag<strong>in</strong>g, P5-Medical Implantable Devices,<br />

P7-Hardware control of HCCI<br />

Combustion Eng<strong>in</strong>es and P8-Architectures<br />

for Video and Image based Systems<br />

are dedicated to respective areas<br />

of CCCD partners.<br />

System Design <strong>Research</strong> at Chalmers<br />

At the architecture level, a major<br />

achievement has been the establishment<br />

of the new architectural framework<br />

known as FlexSoC. Other important<br />

achievements are novel<br />

applications of compression techniques<br />

to reduce the <strong>in</strong>terconnect bandwidth<br />

and the amount of memory resources <strong>in</strong><br />

computer systems. The group has also<br />

contributed with new design space exploration<br />

techniques to assess energy<br />

efficiency <strong>in</strong> complex systems with cooperat<strong>in</strong>g<br />

hardware and software.<br />

At the circuit level, important results<br />

<strong>in</strong>clude new low-power techniques for<br />

sleep-mode circuits, scalable multipliers<br />

with logarithmic depth with regular<br />

layouts, tw<strong>in</strong>-precision datapath units,<br />

and flexible datapath <strong>in</strong>terconnects.<br />

Contributions have also been made to<br />

macro modell<strong>in</strong>g of power dissipation.<br />

To this end, the group has contributed<br />

with macro modell<strong>in</strong>g methods for memory<br />

and datapath blocks to more accurately<br />

estimate the power be<strong>in</strong>g dissipated.<br />

F<strong>in</strong>ally, <strong>in</strong> the field of substrate<br />

noise, we have extended a lot of the<br />

theories that were previously developed<br />

for spread<strong>in</strong>g resistance analysis and to<br />

make it useful for analys<strong>in</strong>g how contacts<br />

on the surface of a silicon chip <strong>in</strong>terfere<br />

with each other. Accurate compact<br />

substrate models which can<br />

predict the noise coupl<strong>in</strong>g of <strong>in</strong>tegrated<br />

circuits are presented. A physics-based<br />

modell<strong>in</strong>g approach has been employed<br />

to yield scalable and predictive three<br />

dimensional models.<br />

System Design <strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g<br />

University<br />

This report<strong>in</strong>g entity <strong>in</strong>cludes Microelectronic<br />

Devices and Circuit research at<br />

the departments of Electrical Eng<strong>in</strong>eer<strong>in</strong>g,<br />

Computer and Information Science,<br />

and Physics, Chemistry and Biology at<br />

L<strong>in</strong>köp<strong>in</strong>g University.<br />

Most of these activities are organized<br />

<strong>in</strong> Str<strong>in</strong>gent <strong>Research</strong> Centre, with<br />

9 professors and 5 associate professors.<br />

Dur<strong>in</strong>g 2003-2007 we estimate<br />

that we contributed about 0.5 % of<br />

world research <strong>in</strong> our field, and we exam<strong>in</strong>ed<br />

31 PhD’s, of which 77 % now<br />

work <strong>in</strong> <strong>in</strong>dustry. 3 sp<strong>in</strong>-off companies<br />

were funded dur<strong>in</strong>g the period, and we<br />

developed cooperation with many companies<br />

<strong>in</strong> Sweden, Europe and US.<br />

Key research fields are High performance<br />

and low power analog and digital<br />

circuit techniques for processors<br />

and wireless systems; Design, efficient<br />

implementation and new applications of<br />

digital filters; Efficient processor architectures<br />

for network<strong>in</strong>g, wireless baseband<br />

and media; Design methods, test<strong>in</strong>g<br />

and optimization of multicore<br />

systems; and New methods for efficient<br />

device simulation.


40 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

Appendix 4. Assessment criteria<br />

Assessment for scientific quality<br />

Outstand<strong>in</strong>g<br />

World lead<strong>in</strong>g research; of great <strong>in</strong>ternational <strong>in</strong>terest with broad impact and with publications <strong>in</strong> <strong>in</strong>ternationally lead<strong>in</strong>g<br />

journals.<br />

Excellent<br />

<strong>Research</strong> at a very high <strong>in</strong>ternational level; of <strong>in</strong>ternational <strong>in</strong>terest with impact with<strong>in</strong> its field and with publications<br />

<strong>in</strong> <strong>in</strong>ternationally lead<strong>in</strong>g journals.<br />

Very good<br />

Internationally recognized research; with publications <strong>in</strong> <strong>in</strong>ternationally well known journals.<br />

Good<br />

<strong>Research</strong> that is of good <strong>in</strong>ternational standard and partially published <strong>in</strong> well-known <strong>in</strong>ternational journals.<br />

Insufficient<br />

<strong>Research</strong> of low <strong>in</strong>ternational standard.<br />

Grades for strategic relevance – importance for Sweden’s long term competiveness<br />

Very high<br />

High<br />

Medium<br />

Low


Appendix<br />

41<br />

Appendix 5. F<strong>in</strong>ancial support from VR, SSF and V<strong>in</strong>nova<br />

(2003–2007)<br />

Report<strong>in</strong>g Entity Ma<strong>in</strong> grant holder Source Title amount (SEK) Duration<br />

Silicon <strong>Research</strong> at KTH Östl<strong>in</strong>g Mikael SSF High Frequency silicon subproject 25 000 000 2000-2005<br />

Östl<strong>in</strong>g Mikael SSF Nano Electronic MOSFETs 4 500 000 2006-2008<br />

Östl<strong>in</strong>g Mikael VINNOVA MEDEA+ T206 SOI CMOS for low power, 1 000 000 2003-2004<br />

2002-2005, SOI CMOS för lågeffekt och<br />

radiofrekvenstillämpn<strong>in</strong>gar, 2003-00023<br />

Östl<strong>in</strong>g Mikael VINNOVA Silicon based devices and circuits for RF/Wireless 5 700 000 2002-2006<br />

Domeij Mart<strong>in</strong> VINNOVA Silicon Carbide Power Devices and Modules for 3 000 000 2006-2009<br />

Medium and High Voltage<br />

Domeij Mart<strong>in</strong> VR Silicon carbide bipolar junction transistors for 2 025 000 2007-2009<br />

energy efficient power electronic systems<br />

Hallén Anders VR Implantation Technology for Wide Bandgap 2 030 000 2004-2006<br />

Semiconductors<br />

L<strong>in</strong>narsson Margareta VR Diffusion mechanisms for dopants <strong>in</strong> compound 2 030 000 2003-2005<br />

semiconductors<br />

L<strong>in</strong>nros Jan VR ’Recomb<strong>in</strong>ation enhanced phenomena <strong>in</strong> SiC: 2 000 000 2003-2005<br />

Fundamentals and applications’,<br />

L<strong>in</strong>nros Jan VR Synthesis and properties of s<strong>in</strong>gle lum<strong>in</strong>escent 2 030 000 2003-2005<br />

Si quantum dots<br />

L<strong>in</strong>nros Jan VR Synthesis and properties of silicon quantum dots 2 250 000 2006-2008<br />

and nanowires<br />

Willén Bo VR Advanced Collector Design of InP-HBTs for 1 950 000 2002-2004<br />

160-Gb/s Communication System Applications<br />

Zhang Shi-Li VR Fundamental aspects of electrical contact between 2 020 000 2003-2005<br />

carbon nanotubes (CNT) and transition metals for<br />

CNT-based nanoelectronics<br />

Zhang Shi-Li VR Functionalization of carbon nanotubes for 1 950 000 2006-2008<br />

controllable fabrication of field-effect transistors<br />

and electric biosensors<br />

Bakowski Mietek VR New dielectric and semi-<strong>in</strong>sulat<strong>in</strong>g materials for 2 730 000 2002-2005<br />

advanced wide bandgap devices<br />

Silicon <strong>Research</strong> at Uppsala Hultman Lars/ SSF Materials Science and Surface Eng<strong>in</strong>eer<strong>in</strong>g (MS2E) 45 000 000 2006-2010<br />

University<br />

Katardjiev Ilja/<br />

Berg Sören/etc<br />

Olsson Jörgen SSF NEMO – Nano Electronic MOSFETs 1 000 000 2006-2007<br />

Katardjev Ilia SSF Electro-acoustic applications 15 000 000 2003-2007<br />

Olsson Jörgen SSF High Frequency silicon subproject 12 840 000 2000-2005<br />

Hultman Lars/<br />

Katardjiev Ilja/<br />

Berg Sören/etc SSF Low temperature synthesis of th<strong>in</strong> films 33 000 000 2000-2005<br />

Rydberg Anders SSF Antenna <strong>in</strong>tegrated circuit implementation 700 000 2003-2003<br />

techniques for future software radio<br />

Berg Sören VINNOVA SiC-Si hybride substrates 1 500 000 2005-2006<br />

Olsson Jörgen VINNOVA Efficiency and non-l<strong>in</strong>ear effects for RF-power devices 630 000 2005-2006<br />

Gunn<strong>in</strong>gberg Per/ VINNOVA Wireless Sensor Networks (Center of Excellence) 70 000 000 2007-2016<br />

Katardjiev Ilia/<br />

Rydberg Anders/etc<br />

Katardjiev Ilia VINNOVA Real time sens<strong>in</strong>g artificial dog’s nose 4 800 000 2003-2005<br />

Olsson Jörgen VINNOVA Si/SiC hybrid substrate and components 4 000 000 2006-2008<br />

Katardjiev Ilia/ VR Detection of prote<strong>in</strong>, virus and bacteria 2 100 000 2005-2009<br />

Attana AB


42 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

Report<strong>in</strong>g Entity Ma<strong>in</strong> grant holder Source Title amount (SEK) Duration<br />

Katardjiev Ilia/ VR Frequency modulated pressure sensor for 1 720 000 2007-2010<br />

Radi Medical <strong>in</strong>-vivo measurements<br />

Olsson Jörgen VR Theoretical Analysis and Development of 2 030 000 2003-2005<br />

SOI double-gate (DG) and gate-all-around (GAA)<br />

MOS Transistors<br />

Rydberg Anders VR Small Adaptive High Efficiency Integrated 3D 2 200 000 2007-2009<br />

Antennas for Wireless Sensor Networks<br />

Rydberg Anders VR Hybrid photonic-antennna-matrix for 5 and 17 GHz 1 828 000 2003-2006<br />

Rydberg Anders VR Small Adaptive High Efficiency Integrated 3D 2 229 000 2007-2009<br />

Antennas for Wireless Sensor Networks<br />

Silicon Carbide <strong>Research</strong> Janzén Erik SSF SiC Materials 20 000 000 2003-2007<br />

at L<strong>in</strong>köp<strong>in</strong>g University Janzén Erik VR Properties of high-purity SiC 1 950 000 2002-2004<br />

Janzén Erik VR Bulk growth of GaN 3 925 000 2005-2007<br />

Bergman, Peder VR Understand<strong>in</strong>g, characterisation and 2 100 000 2003-2005<br />

reduction of dislocations <strong>in</strong> SiC.<br />

Kakanakova Anelia VR Epitaxial Growth of GaN and related alloys 2 980 000 2003-2006<br />

<strong>in</strong> a hot-wall MOCVD reactor<br />

Gallium Nitride <strong>Research</strong> Monemar Bo VR III-nitrides, hydride CVD growth and physical 1 950 000 2002-2004<br />

at L<strong>in</strong>köp<strong>in</strong>g University<br />

properties<br />

Monemar Bo VR Basic semiconductor physics 2 830 000 2003-2005<br />

Monemar Bo VR Growth of bulk GaN with HVPE 670 000 2004<br />

Buyanova Ir<strong>in</strong>a VR New photonic material based on nitrogen 1 950 000 2002-2004<br />

conta<strong>in</strong><strong>in</strong>g III-V ternary and quaternary alloys<br />

Buyanova Ir<strong>in</strong>a VR New photonic materials based on nitrogen conta<strong>in</strong><strong>in</strong>g 1 960 000 2005-2007<br />

III-V ternary and quaternary allosy<br />

Chen Weim<strong>in</strong> VR Physics of sp<strong>in</strong>tronic of semiconductor and 1 950 000 2005-2007<br />

nanostructures<br />

Chen Weim<strong>in</strong> VR Defect Spectroscopy of silicon carbide 2 030 000 2003-2005<br />

Chen Weim<strong>in</strong> VR Physics of semiconductor sp<strong>in</strong>tronic materials 2 100 000 2005-2007<br />

and nanostructures<br />

Darakchieva Vanya VR Fysik av III-Nitrid multi functional materials and low 3 370 000 2006-2009<br />

dimensionals structures<br />

Paskov Plamen VR GaN/AlGaN nanostructures for <strong>in</strong>frared optoelectronic 1 780 000 2006-2008<br />

applications<br />

Janzen Erik VR Bulk Growth of GaN 3 425 000 2005-2007<br />

Janzen Erik VR Bulk Growth of GaN 500 000 2006-2007<br />

Silicon <strong>Research</strong> at Enoksson Peter SSF Beam steer<strong>in</strong>g 4 000 000 2003-2006<br />

Chalmers Enoksson Peter SSF NanoDev 900 000 2003-2007<br />

Engström Olof SSF NanoDev 900 000 2003-2007<br />

Enoksson Peter SSF Caramel 900 000 2003-2007<br />

Engström Olof SSF High Frequency silicon subproject 1 900 000 2006-2008<br />

Enoksson Peter VINNOVA Intellisense Nordic 1 800 000 2004-2007<br />

Enoksson Peter VINNOVA V<strong>in</strong>nova SLM 3 000 000 2003-2007<br />

Lundgren Per VR A Silicon Interface to Molecular Electronics 1 950 000 2002-2004<br />

Microwaves <strong>Research</strong> Zirath Herbert SSF High speed electronics and photonics HSEP 7 300 000 2003-2007<br />

at Chalmers Zirath Herbert SSF Wide-bandgap Microwave Devices 12 000 000 2003-2007<br />

Grahn Jan SSF Subproject SFC HSEP 6 400 000 2003-2007<br />

Grahn Jan VINNOVA Chalmers competence center for high speed technology 75 000 000 1995-2005<br />

Zirath Herbert VINNOVA High frequency and high Powert SiC MESFET 3 600 000 2005-2006<br />

Swahn Thomas VINNOVA OptCom 9 050 000 2005-2006<br />

Zirath Herbert VINNOVA HI-MISSION 1 400 000 2005-2007<br />

Zirath Herbert VINNOVA 60 GHz MMIC 269 000 2007<br />

Grahn Jan VR 200 GHz mixers based on ultra-high speed 2 030 000 2003-2005<br />

InP HEMT technology


Appendix<br />

43<br />

Report<strong>in</strong>g Entity Ma<strong>in</strong> grant holder Source Title amount (SEK) Duration<br />

Terahertz Systems <strong>Research</strong> Stake Jan SSF Subproject SFC HSEP 2 000 000 2003-2007<br />

at Chalmers Gevorgian Spartak SSF Subproject SFC HSEP 5 700 000 2003-2007<br />

Gevorgian Spartak VR Components for future micro/millimetre wave 2 730 000 2002-2004<br />

systems<br />

Gevorgian Spartak VR Tuneable Integrated Microwave Metamaterials (TIME) 1 790 000 2002-2008<br />

Nanotubes <strong>Research</strong> at Campbell Eleanor SSF CMOS Integrated Carbon-based Nano Components 10 000 000 2003-2007<br />

Chalmers Campbell Eleanor SSF CARAMEL 18 000 000 2000-2007<br />

Svensson Krister VR Electron Transport and Electromigration <strong>in</strong> 2 150 000 2004-2006<br />

Carbon Nanotubes (ETEC)<br />

Svensson Krister VR Electron transport and <strong>in</strong>fluence of mechanical 2 150 000 2007-2009<br />

stress <strong>in</strong> nanoscale structures (ETIM)<br />

Quantum Electronics Dels<strong>in</strong>g Per SSF Nanodevices and quantum comput<strong>in</strong>g NANODEV 30 000 000 2003-2007<br />

<strong>Research</strong> at Chalmers Claeson Tord SSF Transport <strong>in</strong> low dimensional systems: carbon nanotubes, 1 500 000 2004-2007<br />

sp<strong>in</strong>tronics<br />

Kubatk<strong>in</strong> Sergey SSF Molecular electronics, fullerens, and carbon 2003-2007<br />

nanotubes, *Part of Nanodev reported <strong>in</strong>dependently<br />

Dels<strong>in</strong>g Per VR Ultrafast charge sensors-2 4 600 000 2006-2008<br />

Kuzm<strong>in</strong> Leonid VR On-Chip Cascade Quasiparticle Amplifier for 2 030 000 2003-2005<br />

Bolometer Readout<br />

Kuzm<strong>in</strong> Leonid VR Cryogen-free He3 cryostat 760 000 2005<br />

Kuzm<strong>in</strong> Leonid VR Carbon Nanotube based Electron Cool<strong>in</strong>g and 1 500 000 2006-2007<br />

Supersensitive Detection<br />

Lombardi Filomena VR Material and technological aspects of HTS parity 2 850 000 2002-2005<br />

switches for superconduct<strong>in</strong>g phase qubits<br />

Wend<strong>in</strong> Göran VR Quantum Comput<strong>in</strong>g with Josephson Junctions 1 600 000 2002-2004<br />

Nanostructure Physics Haviland David SSF Magneto-Electronic Nanodevices 8 600 000 2003-2007<br />

<strong>Research</strong> at KTH Haviland David SSF Nano Devices and Coponants 2 500 000 2003-2007<br />

(Dels<strong>in</strong>g Per)<br />

(NanoDev, with Chalmers)<br />

Haviland David SSF Bio-Electronic Interfaces (BioX program) 2 750 000 2005-2007<br />

(Ulfendahl Mats)<br />

Haviland David VR Quantum Phase Transition and Quantum 2 025 000 2003-2006<br />

Electrodynamics<br />

Haviland David VR Nano Patterned Prote<strong>in</strong> b<strong>in</strong>d<strong>in</strong>g on electronic 2 400 000 2001-2003<br />

substrates<br />

Korenivski Vlad VR Sp<strong>in</strong> resonant tunnel<strong>in</strong>g nano-devices 2 350 000 2007-2009<br />

Sp<strong>in</strong>tronics <strong>Research</strong> Rao K.Venkat VINNOVA Ferromagnetic Semiconductors for 2 000 000 2005-2007<br />

at KTH<br />

Sp<strong>in</strong>tronics -Phase II<br />

Rao K Venkat VINNOVA Ferromagnetic Semiconductors for Sp<strong>in</strong>tronics and 1 000 000 2004-2006<br />

Magnetooptic devices<br />

Nanometer Structures Samuelson Lars SSF <strong>Microelectronics</strong> Center: Nano science for 40 000 000 2003-2007<br />

<strong>Research</strong> at Lund University<br />

future Electronic Devices.<br />

Samuelson Lars SSF Materials Consortium: Quantum Materials 25 000 000 2000-2005<br />

Wernersson Lars-Erik SSF INGVAR Grant 6 000 000 2005-2008<br />

Samuelson Lars SSF Graduate School: Nano Science 5 000 000 2003-2005<br />

Samuelson Lars SSF Strategic <strong>Research</strong> Center: Nanowires for Emerg<strong>in</strong>g 34 000 000 2006-2010<br />

Nanoelectronics and Life Science Applications.<br />

Montelius Lars VINNOVA VINST Next NIL 3 737 000 2002-2004<br />

Wallenberg Re<strong>in</strong>e VR Nanostructured Functional Materials 675 000 2004<br />

Tegenfeldt Jonas VR DNA <strong>in</strong> Nanoscale Conf<strong>in</strong>ed Environments 2 286 000 2008-2010<br />

Deppert Knut VR Experimental and Numerical Investigation of 1 040 000 2002-2003<br />

Aerosol Nucleation <strong>in</strong> Non-Isothermal Flow<br />

Deppert Knut VR Dedicated Cluster Tool for Nanowire Growth 8 060 000 2005-2010<br />

Wernersson Lars-Erik VR Heterogeneous Integration of Narrow Band Gap Materials 2 200 000 2007-2009


44 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

Report<strong>in</strong>g Entity Ma<strong>in</strong> grant holder Source Title amount (SEK) Duration<br />

Wallenberg Re<strong>in</strong>e VR Nanostructured Functional Materials 1 490 360 2005-2007<br />

Höök Fredrik VR Multiparameter QCM-D Measurements on 1 080 000 2004-2005<br />

Array-Based Formats for Applications <strong>in</strong> Biotechnology<br />

Höök Fredrik VR M<strong>in</strong>iaturzed Parellel Sensors for Studies of Membrane 3 171 000 2006-2008<br />

Prote<strong>in</strong>s<br />

Höök Fredrik VR Novel Sensor Concepts Based on Electromechanical 2 566 200 2006-2008<br />

and Optical Readouts for Applications <strong>in</strong> Biotechnology<br />

Samuelson Lars VR Nanowires for Fundamental Materials science and 22 000 000 2005-2010<br />

Quantum Physics and for Applications <strong>in</strong> Electronics,<br />

Photonics and <strong>in</strong> Life-sciences<br />

Wallenberg Re<strong>in</strong>e VR Fabrication, Characterization and Applications of 1 755 000 2002-2004<br />

Nanowhiskers<br />

Xu Hongqi VR Theoretical Study of Molecular and Electronic Structure 1 060 800 2002-2004<br />

of Semiconductor Nanocrystals<br />

Pistol Mats-Erik VR Theory and Experiments of Quantum Optics Based on 1 880 643 2005-2007<br />

Quantum Dots<br />

Pistol Mats-Erik VR Theory and Experiment of Novel Quantum Wire Structures 1 950 000 2008-2010<br />

Samuelson Lars VR Optical and electrical studies of s<strong>in</strong>gle quantum 3 900 000 2002-2003<br />

structures and s<strong>in</strong>gle molecules<br />

Pistol Mats-Erik VR Quantum optics based on quantum dots 1 365 000 2002-2004<br />

Hongqi Xu VR Three-term<strong>in</strong>al ballistic junctions as build<strong>in</strong>g blocks 2 028 000 2003-2005<br />

for nanoscale electronic devices: design, fabrication,<br />

characterization and model<strong>in</strong>g<br />

Hongqi Xu VR Three-term<strong>in</strong>al ballistic junctions as build<strong>in</strong>g blocks for 2 850 000 2006-2008<br />

nanoscale electronic devices: design, fabrication,<br />

characterization and model<strong>in</strong>g<br />

Wacker Andreas VR Scatter<strong>in</strong>g and Coherence <strong>in</strong> Quantum Cascade Lasers 700 000 2005-2007<br />

Wacker Andreas VR Employment as Scientist 953 100 2003-2008<br />

Samuelson Lars VR L<strong>in</strong>né Grant: Nanoscience and Quantum Eng<strong>in</strong>eer<strong>in</strong>g. 75 000 000 2006-2016<br />

Samuelson Lars VR Studies of Hetero- and Quantumstructures <strong>in</strong> Nanowires 2 850 000 2006-2008<br />

Underly<strong>in</strong>g Applications <strong>in</strong> Electronics, Photonics and <strong>in</strong><br />

Thermoelectrics<br />

VR Photonics and Electronics <strong>in</strong> One-Dimensional Nanowires 1 976 000 2003<br />

VR Photonics and Electronics <strong>in</strong> One-Dimensional Nanowires 861 667 2005<br />

Pistol Mats-Erik VR Modell<strong>in</strong>g and Optical Studies of Quantum Structures 811 200 2003-2004<br />

Tegenfeldt Jonas VR Microfabricated Nearfield Optical Scanner for DNA, 4 050 384 2003-2006<br />

Prote<strong>in</strong> and Cell Studies<br />

Samuelson Lars VR Studies of Hetero- and Quantum <strong>in</strong> 0D and 1D 2 028 000 2003-2005<br />

Deppert Knut VR Novel Nanomaterials by Metallurgy <strong>in</strong> the Aerosol Phase 1 822 500 2004-2006<br />

Wernersson Lars-Erik VR Metalorganic Vapour Phase Epitaxy System for III-V Materials 7 700 000 2004-2008<br />

Wallenberg Re<strong>in</strong>e VR Employment as Scientist <strong>in</strong> the Subject “Inorganic Synthesis 3 365 120 2002-2003<br />

and Characterization of Cluster” dur<strong>in</strong>g<br />

2001-01-01—2003-12-31<br />

Organic Electronics Inganäs Olle SSF Organic electroncs 31 000 000 2003-2007<br />

<strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Inganäs Olle VINNOVA Molekylära elektroniska mask<strong>in</strong>er 4 500 000 2003-2006<br />

University Inganäs Olle VR Metal-semiconductor transition <strong>in</strong> oriented conjugated 2 730 000 2002-2004<br />

polymer films <strong>in</strong> field effect devices<br />

Inganäs Olle VR Biomolekyldetektion med konjugerade polyelektrolyter 2 100 000 2006-2008<br />

Paper Electronics Berggren Magnus SSF INGVAR Programme 10 000 000 2001-2007<br />

<strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Berggren Magnus SSF Strategic <strong>Research</strong> Centre of Organic Bioelectronics 37 000 000 2006-2010<br />

University Richter Dahlfors Agneta SSF Bio-X: Organisk Elektronik för regler<strong>in</strong>g av cellers signalvägar 5 500 000 2005-2008<br />

and Magnus Berggren<br />

Berggren Magnus VR Ion and Fluid Logics: Novel Organic Electrochemical 2 030 000 2003-2005<br />

Transistors<br />

Berggren Magnus VR Organic diodes and transistors <strong>in</strong>clud<strong>in</strong>g molecular switches 1 790 000 2006-2008


Appendix<br />

45<br />

Report<strong>in</strong>g Entity Ma<strong>in</strong> grant holder Source Title amount (SEK) Duration<br />

Photonic Communication Andrekson Peter SSF Subproject SFC HSEP 4 000 000 2003-2007<br />

<strong>Research</strong> at Chalmers Andrekson Peter SSF Subproject SFC HSEP 7 000 000 2003-2007<br />

Andrekson Peter VINNOVA 100 GET prestudy 500 000 2007<br />

Andrekson Peter VR Ultra-Broadband Fiber-Optic Parametric Amplifiers and 2 800 000 2007-2009<br />

Their Applications<br />

Andrekson Peter VR Experiments <strong>in</strong> cod<strong>in</strong>g and equalization for high-speed 2 000 000 2004<br />

optical communication systems<br />

Karlsson Magnus VR Ultrahigh speed optical transmission impairments and 2 730 000 2002-2004<br />

their remedy<br />

Karlsson Magnus VR New functionailities <strong>in</strong> optical networks 2 250 000 2006-2008<br />

Andrekson Peter VR Cod<strong>in</strong>g and equalization for optical communication systems 2 100 000 2004-2007<br />

Andrekson Peter VR Cod<strong>in</strong>g and equalization for optical communication systems 2 800 000 2007-2009<br />

Photonic Components Willander Magnus SSF Wide-Bandgap Nanolasers 10 000 000 2003-2007<br />

<strong>Research</strong> at L<strong>in</strong>köp<strong>in</strong>g Willander Magnus VR Technical and medical applications of ZnO 3 000 000 2007-2009<br />

University<br />

Quantum Optics <strong>Research</strong> Karlsson Anders SSF INGVAR grant, A. Karlsson 10 000 000 2001-2007<br />

at KTH Björk Gunnar SSF Subproject SFC Photonics 8 000 000 2003-2007<br />

Björk Gunnar VR Fundamentals and applications of quantum <strong>in</strong>terference 2 800 000 2003-2005<br />

Björk Gunnar VR Quantum <strong>in</strong>formation: Multipartite entanglement 2 800 000 2006-2008<br />

Karlsson Anders VR Photonic Quantum Information Technologies 1 500 000 2005-2007<br />

Photonic Devices <strong>Research</strong> Larsson Anders SSF Dilute nitrides for photonics 12 000 000 2003-2007<br />

at Chalmers Larsson Anders SSF Semiconductor lasers for optical networks and 10 000 000 2003-2007<br />

<strong>in</strong>terconnects (part of HSEP)<br />

Galt Sheila SSF Microoptics and diffractive optics for communication and 5 500 000 2003-2007<br />

signal process<strong>in</strong>g (part of HSEP)<br />

Rudquist Per SSF Analog electrooptic effects <strong>in</strong> ferroelectric and antiferro- 2 700 000 2003-2007<br />

electric liquid crystals, part of HSEP (NSF/SSF)<br />

Larsson Anders VINNOVA High speed optoelectronics for optical <strong>in</strong>terconnects (CHACH) 2 600 000 2003-2005<br />

Larsson Anders VINNOVA Low cost solutions for broadband access 3 200 000 2003-2006<br />

Wang Shum<strong>in</strong> VR Metamorphic Long Wavelength Lasers on GaAs 2 025 000 2004-2006<br />

Wang Shum<strong>in</strong> VR Metamorphic long wavelength lasers on patterned GaAs and Si 2 230 000 2007-2009<br />

Rudquist Per VR Electrooptic applications of orthoconic antiferroelectric liquid 1 460 000 2001-2003<br />

crystals and analog response <strong>in</strong> ferroelectric liquid crystals<br />

Rudquist Per VR Polar effects and fundamental physics of chiral liquid crystals 650 000 2002-2003<br />

Larsson Anders VR Vertical external cavity surface emitt<strong>in</strong>g lasers 2 028 000 2003-2005<br />

Larsson Anders VR Optically pumped semiconductor disk lasers 2 300 000 2007-2009<br />

Photonic and Microwave Qiu M<strong>in</strong> SSF Photonic crystals: Light Magic at Work 6 000 000 2005-2008<br />

Eng<strong>in</strong>eer<strong>in</strong>g <strong>Research</strong> Thylén Lars SSF Subproject Photonics 52 000 000 2003-2007<br />

at KTH Thylén Lars VINNOVA High speed photonics 5 000 000 2002<br />

Thylén Lars VINNOVA Fast optical transmitters 9 050 000 2005-2006<br />

Larsson Anders VINNOVA Low-cost components for broadband access networks 3 317 000 2004-2006<br />

Ghisoni Marco, Zarl<strong>in</strong>k VINNOVA Optical Duplexer Innovative packag<strong>in</strong>g for access Networks 1 166 000 2006-2007<br />

Semiconductor AB<br />

Hammar, Mattias VR Advanced technologies for surface-emitt<strong>in</strong>g optoelectronics 1 690 000 2004-2006<br />

Jaskorzynska Bozena VR Optical devices <strong>in</strong> silicon-based photonic crystals 2 030 000 2003-2005<br />

Pasiskevicius Valdas VR Control of optical signals with non-l<strong>in</strong>ear ferro-electric 1 660 000 2003-2005<br />

structures<br />

Qiu M<strong>in</strong> VR Large scale computational analysis and design of photonic 2 020 000 2004-2006<br />

<strong>in</strong>tegrated circuits<br />

Qiu M<strong>in</strong> VR Photonic crystals with dispersive media 2 150 000 2007-2008<br />

Sr<strong>in</strong>ivasan Anand VR Negative refraction <strong>in</strong> two-dimensional photonic crystals 2 150 000 2007-2009<br />

Qiu M<strong>in</strong> VR Design, nanofabrication, and characterization of optical 3 037 500 2007-2009<br />

metamaterials


46 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

Report<strong>in</strong>g Entity Ma<strong>in</strong> grant holder Source Title amount (SEK) Duration<br />

Photonic Materials Thylen Lars VR Intersubband modulator structures 620 000 2003-2004<br />

<strong>Research</strong> at Chalmers Andersson Thorvald VR GaN-research on <strong>in</strong>tersubband structures 500 000 2003-2005<br />

Thylen Lars VR GaN-modulators 900 000 2005-2007<br />

Andersson Thorvald VR Molecular Layers on Semiconductors Grown by organic 1 950 000 2002-2004<br />

molecular beam epitaxy<br />

Andersson Thorvald VR Basic growth issues of MBE-grown GaN materials for devices 1 950 000 2002-2004<br />

System Design <strong>Research</strong> Ismail Mohammed SSF Radio and Mixed signal 25 000 000 2003-2007<br />

at KTH Ismail Mohammed VR A Broadband CMOS “Sniffer” for Always-Best Connected 4G 2 250 000 2006-2008<br />

Wireless Access<br />

Dubrova Elena VR Efficient Algorithms for Probabilistic Verification 2 030 000 2003-2005<br />

Tenhunen Hannu VR Next generation of passive radioferequency identification 2 100 000 2005-2007<br />

enabl<strong>in</strong>g by ultrawide band radio<br />

System Design <strong>Research</strong> Karlsson Johan M SSF Personal Comput<strong>in</strong>g and Communication 14 200 000 1997-2005<br />

at Lund University Anderson John B SSF High Speed Wireless Center 5 000 000 2006-2010<br />

Sundström Lars VINNOVA Integrated Technologies for Wireless Telecommunications 5 400 000 1998-2004<br />

Sjöland Henrik VINNOVA Hi-Mission 800 000 2006-2008<br />

Yuan Jiren VINNOVA Competence Center for Circuit Design 56 000 000 1998-2007<br />

Sjöland Henrik VINNOVA Technology for cheap 60GHz WLAN and cont’d 5 000 000 2003-2008<br />

Nilsson Peter VR Hardware Architectures for MIMO Systems 2 250 000 2006-2008<br />

Öwall Viktor VR Design Techniques for Ultra Low Energy Digital Circuits- 1 200 000 2007-2009<br />

Sub-threshold Operation and Leakage Reduction<br />

System Design <strong>Research</strong> Stenström Per SSF Flexible System-on-chip 8 000 000 2003-2007<br />

at Chalmers Hughes John VR Typ<strong>in</strong>g Erlang 1 800 000 2005-2007<br />

Jeppson Kjell VR Noise Coupl<strong>in</strong>g Analysis and Transistor Model<strong>in</strong>g for 2 020 000 2004-2006<br />

High-Frequency Nanoscale SoCs<br />

Larsson-Edefors Per VR Tuned Power Gat<strong>in</strong>g under Application Control 2 230 000 2007-2009<br />

Hughes John VR Session types meet <strong>in</strong>dustrial software 1 800 000 2006-2009<br />

System Design <strong>Research</strong> Svensson Christer SSF Integrated electronic systems 50 000 000 2003-2007<br />

at L<strong>in</strong>köp<strong>in</strong>g University Wahab Qamar-ul VINNOVA Optimization of LDMOS transistor for RF applications 1 300 000 2005-2006<br />

Liu Dake VINNOVA Socware project 2 250 000 2003-2005<br />

Liu Dake VINNOVA Socware project 3 000 000 2003-2005<br />

Peng Zebo VINNOVA SoC design for testability 3 500 000 2002-2004<br />

Johansson Håkan VR Effektiva och flexibla algoritmer för digital signalbehandl<strong>in</strong>g 1 944 000 2006-2008<br />

Löwenborg Per VR Flexibla analoga/digitala gränssnitt med höga prestanda 1 863 000 2005-2007<br />

Svensson Christer VR Direct RF sampl<strong>in</strong>g for future radio architectures 2 250 000 2006-2008<br />

Alvandpour Atila VR Process-Variation-Tolerant, Ultra Low Power, High-Speed 2 250 000 2006-2008<br />

Analog-to-Digital Conversion<br />

Wanhammar Lars VR Energieffektiva signaler och systems 1 863 000 2005-2007<br />

Gustafsson Oscar VR Samdesign av algoritm och hårdvara för applikationer 2 025 000 2007-2009<br />

begränsade av m<strong>in</strong>ne och kommunikation<br />

Gustafsson Oscar VR Energieffektiv aritmetik 3 240 000 2004-2007


Appendix<br />

47<br />

Appendix 6. Background of experts<br />

Personal <strong>in</strong>formation<br />

Name:<br />

Affiliation:<br />

Robert W. Brodersen<br />

University of California, Berkeley<br />

Professor Emeritus<br />

Department of Electrical Eng<strong>in</strong>eer<strong>in</strong>g and Computer<br />

Science University of California, Berkeley<br />

Telephone: +1 510 666 31 10<br />

E-mail:<br />

bwb@bwrc.eecs.berkeley.edu<br />

Year of birth: 1945<br />

Native country: USA<br />

Academic Degrees:<br />

1966 Bachelor’s of Science degrees <strong>in</strong> Electrical<br />

Eng<strong>in</strong>eer<strong>in</strong>g and Mathematics from the California State<br />

Polytechnic University, Pomona, CA<br />

1968 Eng<strong>in</strong>eer<strong>in</strong>g and Master’s of Science degrees from<br />

the Massachusetts Institute of Technology (MIT)<br />

Cambridge<br />

1972 Ph.D. <strong>in</strong> Eng<strong>in</strong>eer<strong>in</strong>g from MIT<br />

Employment history<br />

1976–1976 Member of the Technical Staff, Central <strong>Research</strong><br />

Laboratory, Texas Instruments, Dallas.<br />

1976– EECS faculty at the University of California<br />

Special Assignments<br />

Professor Brodersen is the author or co-author of numerous journal and conference<br />

papers and author, co-author, editor or contributor to 16 books <strong>in</strong>clud<strong>in</strong>g: Anatomy<br />

of a Silicon Compiler, 1992, Low Power Digital CMOS Design, 1995, Low-Power<br />

CMOS Wireless Communications: A Wideband CDMA System Design, 1998 and<br />

Energy Efficient Micro Processor Design, 2001. He was a co-founder of Atheros,<br />

Inc., and is now chairman of SiBEAM, BeeCUBE and Adaptrum. He is a Fellow of<br />

the IEEE and member of the National Academy of Eng<strong>in</strong>eer<strong>in</strong>g.<br />

Scientific Activities and Interests<br />

Professor Brodersen’s research focus is on new applications of <strong>in</strong>tegrated<br />

circuits as applied to personal communications systems with emphasis on wireless<br />

communications, low power design and the CAD tools necessary to support these<br />

activities.


48 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

Personal <strong>in</strong>formation<br />

Name:<br />

Affiliation:<br />

Qiut<strong>in</strong>g Huang<br />

Swiss Federal Institute of Technology (ETH) Zurich<br />

Telephone: +41 446 32 52 40<br />

E-mail:<br />

huang@iis.ee.ethz.ch<br />

Year of birth: 1957<br />

Native country: USA<br />

Academic Degrees:<br />

B.Sc <strong>in</strong> 1982 from Harb<strong>in</strong> Institute of Technology<br />

Ph.D <strong>in</strong> 1987 from the Katholieke Universiteit Leuven,<br />

Belgium.<br />

Special Assignments<br />

In 2007 Professor Huang was awarded a Cheung Kong Scholar Professorship by the<br />

Ch<strong>in</strong>ese M<strong>in</strong>istry of Education and the Cheung Kong Foundation, and spends part<br />

of his time at the South East University <strong>in</strong> Nanj<strong>in</strong>g, Ch<strong>in</strong>a. He is a Fellow of the IEEE<br />

and serves on the executive committee of the IEEE International Solid-State Circuits<br />

Conference (ISSCC). He is also a member of wireless subcommittee of ISSCC<br />

and the chairman of its European Steer<strong>in</strong>g Committee. Furthermore, Professor<br />

Huang has been serv<strong>in</strong>g on the technical program committee of the European Solid-<br />

State Circuits Conference (ESSCIRC) <strong>in</strong> the past 15 years.<br />

Scientific Activities and Interests<br />

Prof. Huang is an acknowledged expert <strong>in</strong> mixed signal analogue-digital <strong>in</strong>tegrated<br />

circuits, and radio frequency (RF) circuits and systems for communications. He was<br />

one of the pioneers <strong>in</strong> the use of CMOS technology for RF applications and played a<br />

key role <strong>in</strong> the wireless <strong>in</strong>dustry’s acceptance of RF CMOS for cellular applications.<br />

His research group published the world’s first RF CMOS transceiver for GSM, as<br />

well as WCDMA. He also led the development of an RF CMOS transceiver for the<br />

IEEE 802.11g wireless LAN standard. His research group also developed the<br />

world’s lowest power pag<strong>in</strong>g receiver for the ERMES standard, and GPS receiver.<br />

Outside RFICs, Prof. Huang published extensively on A-D and D-A converters, <strong>in</strong>tegrated<br />

circuits for sensor <strong>in</strong>terface and Microsystems, <strong>in</strong>tegrated circuits for passive<br />

telemetry and other biomedical applications, smart power <strong>in</strong>tegrated circuits,<br />

very high speed digital <strong>in</strong>tegrated circuits as well as application specific <strong>in</strong>tegrated<br />

circuits for digital baseband modem, <strong>in</strong>clud<strong>in</strong>g an HSDPA receiver and a turbo decoder<br />

for HSDPA.<br />

Professor Huang has collaborated with <strong>in</strong>dustry extensively, and his group spun out<br />

three startup companies. He is the founder of Advanced Circuit Pursuit AG, which<br />

develops highly <strong>in</strong>tegrated RF CMOS transceivers for cellular applications.


Appendix<br />

49<br />

Personal <strong>in</strong>formation<br />

Name:<br />

Affiliation:<br />

Mikko Paalanen<br />

Hels<strong>in</strong>ki University of Technology<br />

Telephone: +358 50 352 88 99<br />

E-mail:<br />

paalanen@neuro.hut.fi<br />

Year of birth: 1948<br />

Native country: F<strong>in</strong>land<br />

Academic Degrees: MSc, Hels<strong>in</strong>ki University of Technology 1972<br />

MSc, University of Ill<strong>in</strong>ois, Champaign Urbana, USA 1973<br />

PhD, Hels<strong>in</strong>ki University of Technology, 1977<br />

Employment history<br />

1977–1992 Member of technical staff, AT&T Bell<br />

1992–1995 Professor <strong>in</strong> Applied Physics, Univ. of Jyväskylä, F<strong>in</strong>land<br />

1996–present<br />

Director, Low Temperature Laboratory, Hels<strong>in</strong>ki University<br />

of Technology, F<strong>in</strong>land<br />

Special Assignments<br />

Chairman of LT22, Int. Conf. on Low Temperature Physics 1999, 1380 participants<br />

Chairman of IUPAP C5, Commission on Low Temperature Physics, 2006–2008<br />

Chairman of ERC PE3, Panel on Condensed Matter Physics, Start<strong>in</strong>g grant 2008<br />

Member of London Prize Selection Panel, 2005–2008<br />

Member of Simon Prize (Institute of Physics, UK) Selection Panel, 2008–2011<br />

Editor of Journal of Low Temperature Physics, 2005–<br />

Scientific Activities and Interests<br />

In his thesis work Prof. Paalanen studied superfluid 3He with NMR method. At Bell<br />

Laboratories he shifted his <strong>in</strong>terest <strong>in</strong> semiconductor physics, especially <strong>in</strong> electron<br />

transport <strong>in</strong> low dimensional structures. He studied electron localization <strong>in</strong> 3D<br />

doped silicon, 2D GaAs/AlGaAs heterostructures and more recently also <strong>in</strong> 1D carbon<br />

nanotubes. Other topics of his <strong>in</strong>terest at Bell Laboratories were Quantum Hall<br />

effect, Fractional Quantum Hall effect and superconductor-<strong>in</strong>sulator transition <strong>in</strong> 2D<br />

InO films. After mov<strong>in</strong>g to F<strong>in</strong>land <strong>in</strong> 1992 he has dedicated his time to studies of<br />

s<strong>in</strong>gle electron transistor and its various applications. Very recently superconduct<strong>in</strong>g<br />

s<strong>in</strong>gle electron transistor has turned out to be a promis<strong>in</strong>g platform for quantum<br />

comput<strong>in</strong>g.


50 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

Personal <strong>in</strong>formation<br />

Name:<br />

Affiliation:<br />

Klaus Petermann<br />

Technische Universität Berl<strong>in</strong><br />

Telephone: +49 30 314 233 46<br />

E-mail:<br />

petermann@tu-berl<strong>in</strong>.de<br />

Year of birth: 1951<br />

Native country: Germany<br />

Academic Degrees:<br />

1974 Dipl. Ing<br />

1976 Dr. Ing.<br />

Employment history<br />

1974–1976 <strong>Research</strong> associate at Technische Universität<br />

Braunschweig<br />

1977–1983 Scientific staff member Forschungs<strong>in</strong>stitut AEG<br />

Telefunken Ulm<br />

S<strong>in</strong>ce 1983<br />

full Professor Technische Universität Berl<strong>in</strong><br />

Special Assignments<br />

1989–1989 Dean of the faculty „Electrical Eng<strong>in</strong>eer<strong>in</strong>g“ at the TU<br />

Berl<strong>in</strong><br />

1997–2002 Head of the Commision for <strong>Research</strong> and scientific<br />

tra<strong>in</strong><strong>in</strong>g at the TU Berl<strong>in</strong><br />

2004–2006 Vice-president for research at the TU Berl<strong>in</strong><br />

Scientific Activities and Interests<br />

1990–2006 Reviewer and project supervisor at the BMBF with<strong>in</strong><br />

photonics and new communication networks (KOMNET,<br />

Multi-Tera-Net)<br />

1997–2002 Affiliate for the DFG at the Technische Universität Berl<strong>in</strong><br />

1996–1996 President of the German „Fakultätentag“ for Electrical<br />

Eng<strong>in</strong>eer<strong>in</strong>g<br />

s<strong>in</strong>ce 1994<br />

Elected member of the Berl<strong>in</strong>-Brandenburg Academy of<br />

sciences<br />

s<strong>in</strong>ce 2002<br />

Elected member of acatech (German academy of<br />

technical sciences)<br />

1999–2004 Associate Editor, IEEE Photonics Technology Letters<br />

1996–2004 Member of the board of the VDE<br />

s<strong>in</strong>ce 2001<br />

Member of the senate of the DFG


Appendix<br />

51<br />

Personal <strong>in</strong>formation<br />

Name:<br />

Affiliation:<br />

Krishna C. Saraswat<br />

Stanford University, Department of Electrical Eng<strong>in</strong>eer<strong>in</strong>g<br />

Telephone: +1 650 725 36 10<br />

E-mail:<br />

saraswat@stanford.edu<br />

Year of birth: 1947<br />

Native country: Born <strong>in</strong> India, Citizen of USA<br />

Academic Degrees:<br />

1971–74 Ph.D. Electrical Eng<strong>in</strong>eer<strong>in</strong>g, Stanford University<br />

1968–69 M.S. Electrical Eng<strong>in</strong>eer<strong>in</strong>g, Stanford University<br />

1963–68 B.E. Electronics, Birla Institute of Technology and Science, India<br />

Employment history<br />

2004– Rickey/Nielsen Chair Professor of Eng<strong>in</strong>eer<strong>in</strong>g, Stanford University<br />

1983– Professor of Electrical Eng<strong>in</strong>eer<strong>in</strong>g, Stanford University<br />

1974–83 Member of <strong>Research</strong> Staff, Integrated Circuits Laboratory,<br />

Stanford University<br />

1969–70 Product Eng<strong>in</strong>eer, Texas Instruments, Dallas Texas<br />

Special Assignments<br />

Consultant and on the board of many companies.<br />

Cofounder of Sensys Instruments (later acquired by Thermawave)<br />

Cofounder of Solexel, Inc.<br />

Assoc. Director, Sematech/SRC Center for Environmentally Benign Manufactur<strong>in</strong>g of<br />

Semiconductors, s<strong>in</strong>ce 1999.<br />

Member, IEEE Grove Award evaluation committee, 2008.<br />

Member, IEEE Fellow evaluation committee, 94–2003.<br />

Member, Technical Committee, IEEE Int. Interconnect Tech. Conf. 97–2003,<br />

Chair 2002.<br />

Member, Technical Committee, IEEE Int. Reliability Physics Symp. 97–98<br />

Member, Technical Committee, IEEE Int. Symp. on VLSI Tech.1984-89, 92–97.<br />

Member, Technical Committee, Int Workshop on Statistical Metrology. 95–97.<br />

Member, Technical Committee, ESSDERC’92<br />

Associate Editor, IEEE Transactions on Electron Device , 1988–90<br />

Chairman, Workshop on CVD Tungsten, 1989, Member Technical Committee, 1985–86<br />

Member, Technical Committee, IEEE Int. Device <strong>Research</strong> Conf. 1985–88<br />

United Nations UNIDO expert on microelectronics <strong>in</strong> India, summer of 1985<br />

Chairman, IEEE IEDM Device Technology group 1984, Member Technical Committee, 1982–83<br />

Scientific Activities and Interests<br />

Professor Saraswat’s research <strong>in</strong>terests are <strong>in</strong> new and <strong>in</strong>novative materials, structures, and<br />

process technology of silicon, germanium and III-V devices and <strong>in</strong>terconnects for nanoelectronics.<br />

He has graduated more than 60 doctoral students and has authored or co-authored<br />

over 550 technical papers.


52 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

Personal <strong>in</strong>formation<br />

Name:<br />

Affiliation:<br />

Clivia M. Sotomayor Torres<br />

Catalan Institue of Nanotechnology and Catalan Institute<br />

of <strong>Research</strong> and Advanced Studies (ICREA)<br />

Telephone: +34 93 581 44 08<br />

E-mail:<br />

clivia.sotomayor.icn@uab.es<br />

Year of birth: 1955<br />

Native country: Born <strong>in</strong> Chile, citizen of the United K<strong>in</strong>gdom.<br />

Academic Degrees:<br />

BSc. (Hons.) Physics <strong>in</strong> 1979 (Southampton University, UK)<br />

Dr. Phil. <strong>in</strong> Physics <strong>in</strong> 1984 (Manchester University, UK)<br />

Employment history<br />

1983–1984 <strong>Research</strong> assistant at the University of St. Andrews (UK).<br />

1984–87 Lecturer <strong>in</strong> Physics, St. Andrews University (UK)<br />

1986–1996 Lecturer and Senior Lecturer <strong>in</strong> Electrical Eng<strong>in</strong>eer<strong>in</strong>g at the<br />

University Glasgow (UK).<br />

1996–2004 Chair of Materials Sciences <strong>in</strong> Electronics at the University of<br />

Wuppertal, Germany.<br />

2004–2008 <strong>Research</strong> Professor, University College Cork, now Tyndall<br />

National Institute.<br />

2007–date<br />

<strong>Research</strong> Professor of the Catalan Institute of <strong>Research</strong> and<br />

Advanced Studies (ICREA)<br />

Special Assignments<br />

Clivia has received three prestigious awards from the Royal Society of Ed<strong>in</strong>burgh, the<br />

Nuffield Foundation, and an Amelia Earhart Fellowship from ZONTA International (USA)<br />

<strong>in</strong> 1993, 1990 and 1982, respectively. S<strong>in</strong>ce May 2007 she holds a <strong>Research</strong> Professorship<br />

awarded by the Catalan Institute of <strong>Research</strong> and Advanced Studies (ICREA)<br />

and is us<strong>in</strong>g it at the Catalan Institute of Nanotechnology ICN (www.nanocat.org). She<br />

is the author of over 350 scientific publications and has edited six books, the latest<br />

one entitled “Alternative Lithography: unleash<strong>in</strong>g the power of Nanotechnology” (Kluwer/Academic<br />

and Plenum/Publishers, New York, 2003). She has participated and<br />

participates <strong>in</strong> several EU projects, among them NaPa, PhOREMOST of FP6. Among the<br />

<strong>in</strong>ternational assignments she is member of the Panel of Expert advis<strong>in</strong>g the French<br />

Agency of <strong>Research</strong> on the six national nanoscience and nanotechnology facilities <strong>in</strong><br />

France. She has acted as member of the programme committee of CLEO, MNE, Si-Nanoelectronics<br />

Workshop, Electronic Materials conference, and several other <strong>in</strong>ternational<br />

cnferences.<br />

Scientific Activities and Interests<br />

In Spa<strong>in</strong> Clivia is sett<strong>in</strong>g up the group Phononic and Photonic Nanostructures to <strong>in</strong>vestigate<br />

phonons <strong>in</strong> low dimensional systems, develop nanofabrication methods for 3D<br />

structur<strong>in</strong>g and carry out research <strong>in</strong> dispersion eng<strong>in</strong>eer<strong>in</strong>g.


Appendix<br />

53<br />

Personal <strong>in</strong>formation<br />

Name:<br />

Affiliation:<br />

Franz-Josef Tegude<br />

University of Duisburg-Essen, Faculty of Eng<strong>in</strong>eer<strong>in</strong>g<br />

Sciences, Center for Semiconductors and Optoelectronics<br />

Telephone: +49 203 379 33 91<br />

E-mail:<br />

franz.tegude@uni-due.de<br />

Year of birth: 1950<br />

Native country: Germany<br />

Academic Degrees:<br />

Prof. Dr. rer. nat.<br />

Employment history<br />

Franz-Josef Tegude received the diploma degree <strong>in</strong> physics from the Westfälische<br />

Wilhelms Universität, Münster, <strong>in</strong> 1977, and doctoral degree <strong>in</strong> Electronic Eng<strong>in</strong>eer<strong>in</strong>g<br />

from University of Duisburg <strong>in</strong> 1983. In 1983 he jo<strong>in</strong>ed the Alcatel-SEL research<br />

center, Stuttgart, where he headed the OEIC group and, later on, the department for<br />

characterization of optoelectronic materials and devices. S<strong>in</strong>ce 1990 he is full professor<br />

for Electrical and Electronic Eng<strong>in</strong>eer<strong>in</strong>g at Duisburg University, and head of the<br />

Solid State Electronics Department.<br />

Special Assignments<br />

Dean Electrical and Electronics Eng<strong>in</strong>eer<strong>in</strong>g (1996–1998)<br />

IEEE-EDS Chapter Chair (1998–2005)<br />

Member of the German <strong>Research</strong> Foundation Review Board (s<strong>in</strong>ce 2008)<br />

Member of InP and Related Materials Steer<strong>in</strong>g Committee<br />

Member of German Physical Society (DPG), the German Society of Information<br />

Technology (VDE, ITG) and the Institute of Electrical and Electronics Eng<strong>in</strong>eers (IEEE)<br />

Scientific Activities and Interests<br />

Electronic, optoelectronic and nanoelectronic materials, devices and circuits based<br />

on III-V semiconductors.


54 International Evaluation of <strong>Swedish</strong> <strong>Research</strong> <strong>in</strong> <strong>Microelectronics</strong><br />

Appendix 7. Abbreviations and acronyms<br />

ACREO<br />

A/D<br />

AFM<br />

CMOS<br />

D/A<br />

DATE<br />

DSP<br />

DVB-H<br />

100GBE<br />

HEMT<br />

LAN<br />

LDMOS<br />

LED<br />

LNA<br />

MBE<br />

MC2<br />

MEMS<br />

MIMO<br />

MMIC<br />

MOCVD<br />

MOS<br />

MyFab<br />

NEMS<br />

OFDM<br />

RF<br />

RFIC<br />

SOC<br />

SOI<br />

TCAD<br />

TEM<br />

VCO<br />

VCSEL<br />

VLSI<br />

<strong>Research</strong> Institute <strong>in</strong> Information Technology<br />

Analog Digital Converter<br />

Atomic Force Microscope<br />

Complementary MOS<br />

Digital Analog Converter<br />

Conference <strong>in</strong> Design, Automation and Test <strong>in</strong> Europe<br />

Digital Signal Processor<br />

Digital Video Broadcast<strong>in</strong>g - Handheld<br />

100-Gigabit Ethernet<br />

High Electron Mobility Transistor<br />

Local Area Network<br />

Lateral Double-Diffused MOS<br />

Light Emitt<strong>in</strong>g Diode<br />

Low Noise Amplifier<br />

Molecular Beam Epitaxy<br />

Department for Micro Technology and Nano Science, Chalmers<br />

Microelectromechanical Systems<br />

The use of multiple antennas at both the transmitter and the receiver<br />

Monolithic Microwave Integrated Circuit<br />

Metal-Organic Chemical Vapour Deposition<br />

Metal Oxide Semiconductor<br />

The <strong>Swedish</strong> Micro and Nano Fabrication Network<br />

Nanoelectromechanical Devices<br />

Orthogonal Frequency-Division Multiplex<strong>in</strong>g<br />

Radio Frequency<br />

Radio Frequency Integrated Circuit<br />

System-on-Chip<br />

Silicon-on-Insulator<br />

Technology Computer Aided Design<br />

Transmission Electron Microscope<br />

Voltage-Controlled Oscillator<br />

Vertical Cavity Surface Emitt<strong>in</strong>g Laser<br />

Very Large Scale Integration


55<br />

T H E S W E D I S H F O U N D AT I O N F O R S T R AT E G I C R E S E A R C H<br />

n supports research and graduate tra<strong>in</strong><strong>in</strong>g <strong>in</strong> the natural sciences,<br />

eng<strong>in</strong>eer<strong>in</strong>g and medic<strong>in</strong>e for the purpose of strenghten<strong>in</strong>g Sweden’s<br />

future competitiveness<br />

n f<strong>in</strong>ances a large number of research projects at <strong>Swedish</strong> universities<br />

- many of them <strong>in</strong> collaboration with <strong>in</strong>dustry<br />

n awards <strong>in</strong>dividual grants to particularly prom<strong>in</strong>ent researchers<br />

n supports important areas such as biotechnology, materials development,<br />

microelectronics, <strong>in</strong>formation technology and product realisation<br />

n has a total annual payment volume of SEK 600 million<br />

n has a capital of about SEK 10 billion (January 2008) as the basis<br />

for its operations<br />

P.O. Box 70483, SE-107 26 Stockholm, Sweden Visit<strong>in</strong>g address: Kungsbron 1, G7<br />

Phone: +46 8 505 816 00 Fax: +46 8 505 816 10 E-mail: found@stratresearch.se www.stratresearch.se

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