Microwave Diode and Capacitors - Cobham plc

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Contents Tuning Varactor Diodes Silicon Step Recovery Diodes 2 GaAs Multiplier Varactors 6 Tuning Varactor Diodes Silicon Tuning Varactors 8 GaAs Abrupt Junction Tuning Varactors 9 GaAs Hyperabrupt Tuning Varactors 11 GaAs Constant Gamma Tuning Varactors 13 PIN Diodes Fast Switching PIN Diodes 16 High Power PIN Diodes 17 Broadband PIN Diodes 18 Passivated PIN Diodes 20 Plated Heatsink PIN Diodes 21 Limiter PIN Diodes 22 MNS Chip Capacitors 23 Case Style Index 26 Equivalent Parts List 32 Cobham MAL Ltd trading as Cobham Sensor Systems www.cobham.com/sensorsystems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility can be accepted for any errors and/or omissions. Descriptions and specifications of products are subject to change without notice Page 1 of 37
Frequency Multiplier Diodes Silicon Step Recovery Diodes A snap varactor is a silicon epitaxial device designed to store charge when conducting in the forward direction. Conduction continues for a short time under reverse bias until the stored charge is swept out by the reverse drive. At this point conduction ceases very abruptly. Lifetime is a measure of the time the diode will maintain the stored charge and the snap time (transition time) is the speed at which reverse conduction ceases. These diodes find application in high efficiency multiplier and up/down converter applications and for comb generators. Specifications @ +25°C Type Number Breakdown Voltage (V) Capacitance Cj-6 (pF) Thermal Resistance (°C/W) Minority Carrier Lifetime (ns) Snap Time (ps) Min Min Max Max. Min. Typ. Max. Typ. Standard Case Style ML4402 15 0.20 0.45 60 7 15 50 40 30 ML4404 15 0.20 0.45 60 10 20 100 70 30 ML4405 20 0.40 0.80 45 10 20 120 90 30 ML4406 30 0.70 1.2 35 15 30 150 100 30 ML4407 45 1.0 2.5 30 35 80 200 150 30 ML4408 60 2.0 4.0 25 50 150 500 350 30 ML4409 75 3.5 8.0 12 100 400 1500 600 30 Notes 1. Breakdown Voltage measured at I R = 10 µA 2. Junction Capacitance measured at f = 1 MHz 3. Minority carrier lifetime measured at I F = 10 mA 4. Thermal resistance measurement is based on an infinite heat sink. 5. Alternative case styles available on request. 6. Storage / Operating Temperature -65°C to +150°C 7. Power Dissipation = 150°C – T ambient Thermal Resistance Cobham MAL Ltd trading as Cobham Sensor Systems www.cobham.com/sensorsystems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility can be accepted for any errors and/or omissions. Descriptions and specifications of products are subject to change without notice Page 2 of 37
Page 1: Microwave Diode and Capacitors 2010
Page 5 and 6: Bias Resistor Selection (R b ) The
Page 7 and 8: Gallium Arsenide Multiplier Varacto
Page 9 and 10: Tuning Varactor Diodes Ceramic Pack
Page 11 and 12: Notes: 1. GaAs tuning varactors are
Page 13 and 14: Typical Performance Cobham MAL Ltd
Page 15 and 16: Notes: 1. All GaAs tuning varactors
Page 17 and 18: PIN Diodes Fast Switching PIN and N
Page 19 and 20: Broadband PIN Diodes The ML4660 and
Page 21 and 22: Silicon Dioxide Passivated Chip PIN
Page 23 and 24: Silicon Limiter PIN Diode The ML 42
Page 25 and 26: Chip Capacitor with Square Bonding
Page 27 and 28: Case Style Index 3 11 Inches Millim
Page 29 and 30: Case Style Index 94 95 Inches Milli
Page 31 and 32: Case Style Index 108 109 Inches Mil
Page 33 and 34: Cobham MAL Ltd trading as Cobham Se
Page 35 and 36: Equivalent Parts List The majority
Page 37 and 38: Equivalent Parts List Part Number D
Page 39: For further information please cont

Microwave Diode and Capacitors - Cobham plc

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