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Microwave Diode and Capacitors - Cobham plc

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Silicon Limiter PIN <strong>Diode</strong><br />

The ML 4200 Series is a range of oxide passivated silicon mesa diodes designed for limiter applications,<br />

especially those requiring low turn-on.<br />

Use of special silane grown silicon, together with differential etching <strong>and</strong> gold diffusion techniques, produces<br />

thin base diodes of low series resistance <strong>and</strong> closely controlled minority carrier lifetime. Combined with low<br />

inductance packaging, these properties allow operation over a broad frequency range up to 18 GHz. Hermetic<br />

sealing <strong>and</strong> oxide passivation provide rugged reliable diodes capable of withst<strong>and</strong>ing stringent environmental<br />

requirements.<br />

Specifications @ +25°C<br />

Type<br />

Breakdown<br />

Voltage (V)<br />

Capacitance<br />

C JO (pF)<br />

Forward<br />

Resistance<br />

(Ohms)<br />

Thermal<br />

Resistance<br />

(°C/W)<br />

Minority<br />

Carrier<br />

Lifetime (ns)<br />

Typ.<br />

Number Min Typ Min Max Typ Max. Max Max.<br />

St<strong>and</strong>ard<br />

Case Styles<br />

ML4202 15 25 0.30 0.35 0.8 1.0 60 15 30<br />

ML4204 15 25 0.20 0.25 1.0 1.2 70 15 30<br />

ML4206 15 25 0.10 0.15 1.2 1.5 80 10 30<br />

ML4207 50 60 0.30 0.35 0.8 1.0 50 20 30<br />

ML4208 50 60 0.20 0.25 1.0 1.2 60 20 30<br />

ML4209 50 60 0.10 0.15 1.2 1.5 70 15 30<br />

Typical Limiter Performance<br />

Type Number<br />

Peak P IN @<br />

10µs (W) Max<br />

Threshold<br />

(dB)<br />

Typ<br />

Leakage P OUT<br />

(dBm) Typ<br />

CW P IN (W)<br />

Max.<br />

Recovery Time<br />

(ns) Typ<br />

ML4202 200 10 24 3 15<br />

ML4204 150 10 23 2 15<br />

ML4206 100 10 22 2 10<br />

ML4207 400 15 29 4 20<br />

ML4208 300 15 28 3 10<br />

ML4209 200 15 27 3 15<br />

Notes:<br />

1. Breakdown Voltage measured at IR = 10uA.<br />

2. Forward bias resistance at 40 mA measured at 3.3 GHz.<br />

3. Junction capacitance measured at 1 MHz.<br />

4. Minority carrier lifetime at IF = 10 mA <strong>and</strong> I f = 1.7<br />

I R<br />

5. Threshold is defined as the input power at which as limiter has 1 dB additional insertion loss over its 0<br />

dBm value (1 dB compression).<br />

6. Typical limiter performance at 1.0 GHz.<br />

7. Alternative case styles available on request.<br />

8. Storage / Operating Temperature Range: -65°C to +150°C.<br />

<strong>Cobham</strong> MAL Ltd trading as <strong>Cobham</strong> Sensor Systems www.cobham.com/sensorsystems<br />

© <strong>Cobham</strong> <strong>plc</strong>, 2010.<br />

Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility can be accepted for any errors <strong>and</strong>/or<br />

omissions. Descriptions <strong>and</strong> specifications of products are subject to change without notice Page 22 of 37

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