Microwave Diode and Capacitors - Cobham plc
Microwave Diode and Capacitors - Cobham plc
Microwave Diode and Capacitors - Cobham plc
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
Silicon Dioxide Passivated Chip PIN <strong>Diode</strong>s<br />
The ML 4P 100 Series of passivated PIN diode chips are produced using modern processing techniques. Each<br />
chip type has an optimally tailored profile <strong>and</strong> sputtered gold metallisation. Implicit in our processing<br />
techniques are diode uniformity <strong>and</strong> quality. Our unique total in-house capability allows for a broad spectrum<br />
of epitaxial resistivities <strong>and</strong> thickness for specific design requirements. Multiple mesa chips can also be<br />
supplied upon request.<br />
Specifications @ +25°C<br />
Type<br />
Number<br />
Breakdown<br />
Voltage Volts<br />
(V)<br />
Min.<br />
Junction<br />
Capacitance<br />
(pF)<br />
Max<br />
Series<br />
Resistance<br />
(Ohms) Max.<br />
Minority<br />
Carrier<br />
Lifetime (ns)<br />
Typ<br />
Reverse<br />
Recovery<br />
Time (ns)<br />
Typ.<br />
Thermal<br />
Resistance<br />
(°C/W) Max<br />
ML4P 150 20 0.10 @ -10V .15 10 2 60<br />
ML4P 151 30 0.05@ -10V 2.0 10 2 60<br />
ML4P 152 30 0.10@ -10V 1.2 10 2 50<br />
ML4P 153 30 0.15@ -10V 0.9 10 2 40<br />
ML4P 154 30 0.20@ -10V 1.0 10 2 35<br />
ML4P 155 40 0.05@ -10V 2.0 15 4 55<br />
ML4P 157 60 0.10@ -50V 1.5 50 6 50<br />
ML4P 158 60 0.15@ -50V 1.2 60 6 40<br />
ML4P 159 60 0.20@ -50V 1.0 65 7 35<br />
ML4P 160 100 0.05@ -50V 1.9 80 8 60<br />
ML4P 161 100 0.10@ -50V 1.2 90 9 45<br />
ML4P 162 100 0.15@ -50V 1.2 100 10 30<br />
ML4P 163 100 0.20@ -50V 1.0 120 15 25<br />
ML4P 164 200 0.02@ -50V 25 150 10 100<br />
ML4P 165 200 0.05@ -50V 2.0 170 20 80<br />
ML4P 166 200 0.10@ -50V 1.5 190 20 45<br />
ML4P 167 200 0.15@ -50V 1.2 220 30 30<br />
ML4P 168 500 0.10@ -50V 1.5 350 40 30<br />
ML4P 169 500 0.15@ -50V 1.2 370 40 30<br />
ML4P 170 500 0.20@ -50V 1.0 380 40 20<br />
Notes:<br />
1. Breakdown Voltage measured at I R = 10µA.<br />
2. Junction capacitance measured at f = 1 MHz<br />
3. Series resistance is measured at a forward current of 100 mA <strong>and</strong> a frequency of 3.3 GHz.<br />
4. Minority carrier lifetime is determined with I f = 10 mA <strong>and</strong> I R = 6 mA at the 90% recovery point.<br />
5. Reverse recovery time is measured at the 90% recovery point with I f = 200 mA <strong>and</strong> I R = 200 mA.<br />
6. Devices are cathode heat sink, for anode heat sinks please contact the factory.<br />
7. Alternative case styles available on request.<br />
8. Storage / Operating temperature = -65°C to +150°C.<br />
<strong>Cobham</strong> MAL Ltd trading as <strong>Cobham</strong> Sensor Systems www.cobham.com/sensorsystems<br />
© <strong>Cobham</strong> <strong>plc</strong>, 2010.<br />
Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility can be accepted for any errors <strong>and</strong>/or<br />
omissions. Descriptions <strong>and</strong> specifications of products are subject to change without notice Page 20 of 37