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Accurate Junction Capacitance Modeling for Substrate Crosstalk ...

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with r 1 denoting the inner and r 2 the outer radius and l the length of the<br />

cylindrical capacitor;<br />

2π<br />

lε<br />

0ε<br />

r<br />

Ccyl<br />

= .<br />

⎛ r2<br />

⎞<br />

ln<br />

⎜<br />

⎟<br />

⎝ r1<br />

⎠<br />

4πε<br />

0ε<br />

r r1<br />

r2<br />

Csph<br />

=<br />

r2<br />

− r1<br />

with r 1 being the inner and r 2 the outer radius of the spherical capacitor. It can be<br />

seen from Fig. 1 and Fig. 3 that three different regions exist:<br />

1. a planar region <strong>for</strong> the bottom<br />

2. a cylindric region <strong>for</strong> the sidewalls<br />

3. a spheric region <strong>for</strong> the corners<br />

(5)<br />

(6)<br />

4. Sidewall calculation<br />

Fig. 3: Different regions<br />

Cylindric region<br />

Planar region<br />

Spheric region<br />

Due to the lateral diffusion length o, with o≠d the shape of the sidewalls is<br />

elliptical instead of cylindrical.<br />

o<br />

Mask<br />

d<br />

<strong>Substrate</strong><br />

Fig. 4: Diffused region<br />

Fig. 5 shows a cut through a sidewall. F1 through F5 are five surfaces that result<br />

in five junction capacitors, that may be combined later on. First the height h and<br />

the width w are determined <strong>for</strong> each surface. To do so, the range of the quarterellipse<br />

is divided into equal parts depending on the maximal structure size. The

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