Accurate Junction Capacitance Modeling for Substrate Crosstalk ...
Accurate Junction Capacitance Modeling for Substrate Crosstalk ...
Accurate Junction Capacitance Modeling for Substrate Crosstalk ...
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with r 1 denoting the inner and r 2 the outer radius and l the length of the<br />
cylindrical capacitor;<br />
2π<br />
lε<br />
0ε<br />
r<br />
Ccyl<br />
= .<br />
⎛ r2<br />
⎞<br />
ln<br />
⎜<br />
⎟<br />
⎝ r1<br />
⎠<br />
4πε<br />
0ε<br />
r r1<br />
r2<br />
Csph<br />
=<br />
r2<br />
− r1<br />
with r 1 being the inner and r 2 the outer radius of the spherical capacitor. It can be<br />
seen from Fig. 1 and Fig. 3 that three different regions exist:<br />
1. a planar region <strong>for</strong> the bottom<br />
2. a cylindric region <strong>for</strong> the sidewalls<br />
3. a spheric region <strong>for</strong> the corners<br />
(5)<br />
(6)<br />
4. Sidewall calculation<br />
Fig. 3: Different regions<br />
Cylindric region<br />
Planar region<br />
Spheric region<br />
Due to the lateral diffusion length o, with o≠d the shape of the sidewalls is<br />
elliptical instead of cylindrical.<br />
o<br />
Mask<br />
d<br />
<strong>Substrate</strong><br />
Fig. 4: Diffused region<br />
Fig. 5 shows a cut through a sidewall. F1 through F5 are five surfaces that result<br />
in five junction capacitors, that may be combined later on. First the height h and<br />
the width w are determined <strong>for</strong> each surface. To do so, the range of the quarterellipse<br />
is divided into equal parts depending on the maximal structure size. The