NAND Flash Reliability and Performance - Micron
NAND Flash Reliability and Performance - Micron
NAND Flash Reliability and Performance - Micron
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Santa Clara, CA USA<br />
August 2007<br />
Endurance <strong>and</strong> Data Retention<br />
� Endurance – PROGRAM/ERASE cycles may<br />
cause charge to be trapped in the dielectric.<br />
This is a failed block that should be retired.<br />
� Data Retention – Charge loss/gain occurs on<br />
the floating gate over time. Cell is undamaged,<br />
block can be reliably erased <strong>and</strong> reprogrammed.<br />
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