right - Micron

The memory 

Experts 

Micron ® 

Product Guide 

2012

Table of 

Contents 

4 How do you benefit when you buy Micron? 

Components 

6 MT41 DDR3 SDRAM 

MT47 DDR2 SDRAM 

MT46 DDR SDRAM 

7 MT48 SDRAM 

MT47 Mobile LPDDR2 

MT46 Mobile LPDDR 

MT48 Mobile LPSDR 

MT49 RLDRAM ® 2 Memory 

MT44 RLDRAM 3 Memory 

8 MT45 PSRAM CellularRAM ® Memory 

MT29 High-Speed NAND Flash Memory 

MT29 Serial NAND Flash Memory 

MT29E Enterprise NAND Flash Memory 

MT29 ClearNAND Flash Memory 

MT29 Enhanced ClearNAND Flash Memory 

9 MT29 NAND Flash Mass Storage Memory 

NAND Small Page (SP) Flash Mass Storage Memory 

MT29 NAND/Mobile LPDRAM MCPs 

M39L0R, PF38F NOR/Mobile LPDRAM MCPs 

10 M36, N3, PF38F, JZ58F NOR/Mobile RAM MCPs 

PF58F NOR/Mobile NAND MCPs 

M58, PC48F, PC28F Parallel NOR Flash Mobile 

11 N25W Serial (SPI) NOR Flash Mobile 

N25Q Serial NOR Flash Embedded 

M25P Serial NOR Flash Embedded 

12 M25PX Serial NOR Flash Embedded 

M25PE Serial NOR Flash Embedded 


M29EW Parallel NOR Flash Embedded 

13 M29W Parallel NOR Flash Embedded 

M29DW Parallel NOR Flash Embedded 

P33 Parallel NOR Flash Embedded 

14 P30 Parallel NOR Flash Embedded 

G18 Parallel NOR Flash Embedded 

J3 Parallel NOR Flash Embedded 

M28W Parallel NOR Flash Embedded 

15 N25Q Serial NOR Flash Automotive 

M25PX Serial NOR Flash Automotive 

M25PE Serial NOR Flash Automotive 

M25P Serial NOR Flash Automotive 

16 M29F Parallel NOR Flash Automotive 

M29W Parallel NOR Flash Automotive 

M29DW Parallel NOR Flash Automotive 

M29AW Parallel NOR Flash Automotive 

17 M58BW Parallel NOR Flash Automotive 

M58WR Parallel NOR Flash Automotive 

e•MMC (Embedded MultiMediaCard ) Memory 

P5Q Serial Phase Change Memory (PCM) 

P8P Parallel Phase Change Memory (PCM) 

Bare Die and Wafer-Level Products 

We have the 

right device for 

your design.

Modules 

18 DDR3 SDRAM 240-pin RDIMM 

DDR3 SDRAM 240-, 244-pin Mini RDIMM 

DDR3 SDRAM 240-pin VLP RDIMM 

DDR3 SDRAM 240-pin LRDIMM 

DDR3 SDRAM 240-pin VLP LRDIMM 

19 DDR3 SDRAM 204-pin SODIMM 

DDR3 SDRAM 204-pin ECC SODIMM 

DDR3 SDRAM 240-pin UDIMM 

DDR3 SDRAM 240-pin ECC UDIMM 

DDR3 SDRAM 240-pin VLP ECC UDIMM 

DDR3 SDRAM 240-, 244-pin Mini UDIMM 

20 DDR2 SDRAM 240-pin RDIMM 


DDR2 SDRAM 240-pin FBDIMM 

DDR2 SDRAM 200-pin SODIMM 


DDR2 SDRAM 200-pin SORDIMM 

DDR2 SDRAM 244-pin VLP MiniDIMM 

DDR SDRAM 184-pin RDIMM 

21 DDR SDRAM 184-pin VLP RDIMM 

DDR SDRAM 200-pin SODIMM 

DDR SDRAM 184-pin UDIMM 

SDRAM 168-pin RDIMM 

SDRAM 144-pin SODIMM 

SDRAM 100-, 168-pin UDIMM 

Storage Devices 

22 Client-Class Solid State Drives (SSDs) 

RealSSD C400 

RealSSD C400 Self-Encrypting Drive (SED) 

RealSSD C400v 

RealSSD C400 mSATA 

23 Enterprise-Class Solid State Drives (SSDs) 

RealSSD P400e SATA 

RealSSD P300 SATA 

RealSSD P320h PCIe 

23 Embedded USBs 

Part Numbering 

25 All DRAM Components 

27 MCP/PoP Memory 

28 DDR3 Modules 

29 DDR2 Modules 

30 SDRAM and DDR Modules 

31 PSRAM CellularRAM Memory 

32 NAND Flash Memory 

33 NAND Small Page (SP) Flash Memory 

34 N25Q Serial NOR Flash Memory 

35 M25/M45 Serial NOR Flash Memory 

36 M29W Parallel NOR Flash Memory 

36 M29AW Uniform Block MLC Flash Memory 

37 M29DW Parallel NOR Flash Memory 

38 M29EW Parallel NOR Flash Memory 

38 M29F Single-Bank 5V Flash Memory 

39 P30/P33 Parallel NOR Flash Memory 

and Stacked Memory 

40 G18 Parallel NOR Flash Memory 

40 J3 Parallel NOR Flash Memory 

41 M28W Parallel NOR Flash Memory 

41 M58BW Parallel NOR Flash Memory 

42 M58WR Parallel NOR Flash Memory 

43 Solid State Drives 

44 Micron ® Product Longevity Program (PLP) 

45 Web Tools 

46 Contact Information

How do you benefit 

when you buy Micron? 

Product 

Breadth 

We have the right device for your 

design—from silicon to systems, 

Micron offers an unprecedented 

choice of memory technologies, 

delivering the right solutions to 

meet our customers’ specific needs, 

on time, and at competitive prices. 

Through strategic acquisitions, 

Micron has created one of the most 

comprehensive, cost-competitive 

memory product portfolios in the 

industry. Through its deep marketsegment 

expertise in the global 

electronics market, Micron offers 

powerful, industry-leading solutions 

for computing, networking, mobile, 

embedded, and consumer 

applications. 

Technical 

Support 

Micron’s engineering and technical 

resources can provide the competitive 

advantage you need to get your 

designs to market faster. Our products 

are backed by 30 years of Micron’s 

industry-leading technical expertise 

and innovation in semiconductor 

design and manufacturing. We’ll 

help you make the best use of the 

technology, from comprehensive data 

sheets to time-saving simulation 

models to local field applications 

engineer support for mass-market 

projects. 

Quality 

Products 

From component design to fabrication 

to the finished package device, our 

stringent testing processes and 

significant investments in proprietary 

test equipment mean that start-tofinish 

quality is literally built into 

every device we sell. 

Our products undergo rigorous testing 

to ensure consistent performance 

in the most demanding and harsh 

environments.

Customer 

Commitment 

Micron has developed an expansive 

global support network and a proven 

methodology for collaborating with 

strategic partners and our customers, 

providing a distinct competitive 

advantage. 

Micron also ensures supply and 

product stability for customers who 

have long-term investments in their 

designs, minimizing the high cost of 

re-qualifications—our new Product 

Longevity Program (PLP) is designed 

to support long-life applications with 

a stable, 10-year memory supply. 

Visit micron.com/plp or page 44 

of this guide for more information 

about the Micron Product Longevity 

Program. 

Environmental 

Certification 

Micron is committed to offering 

semiconductor solutions that meet 

the changing needs of the worldwide 

market. We’ve converted our 

manufacturing processes to provide 

Pb-free versions of our products, and 

many offer the added environmental 

protection of “green” packaging. 

We’ve obtained internationally 

mandated Pb-free levels, including 

those specified in the RoHS directive. 

Technology 

Leader 

Backed by one of the world’s largest 

patent portfolios, Micron continues to 

build on its legacy of driving leadingedge 

process innovation to continually 

develop next-generation memory 

technologies. Micron is a trusted 

partner and frequent contributor to 

the greater industry, joining with 

other industry leaders to solve the 

market’s most complex design 

problems.

Components 


1Gb x4, x8, x16 Yes 1.35V–1.5V 667–933 MHz 78-, 96-ball FBGA 

2Gb x4, x8, x16 Yes 1.35V–1.5V 667–933 MHz 78-, 96-ball FBGA 


MT46 DDR SDRAM 

The memory 

Experts 

Density Bus Width RoHS Voltage Clock Rate Package Temp Range 

0˚C to +95˚C, –40˚˚C to +95˚C, 

–40˚C to +105˚C 

0˚C to +95˚C, –40˚˚C to +95˚C, 

–40˚C to +105˚C 

4Gb x4, x8, x16 Yes 1.35V–1.5V 667–933 MHz 78-, 96-ball FBGA 0˚C to +95˚C, –40˚C to +95˚C 

8Gb x4, x8 Yes 1.35V–1.5V 533–800 MHz 78-, 86-, 96-ball FBGA 0˚C to +95˚C 

512Mb x4, x8, x16 Yes 1.8V 400–533 MHz 

1Gb x4, x8, x16 Yes 1.8V 400–533 MHz 

2Gb x4, x8, x16 Yes 1.8V 400–533 MHz 

60-, 84-ball FBGA, 

Wafer 


Wafer 


Wafer 

0˚C to +85˚C, –40˚C to +95˚C, 

–40˚C to +105˚C 

0˚C to +85˚C, –40˚C to +95˚C, 

–40˚C to +105˚C 

0˚C to +85˚C, –40˚C to +95˚C, 

–40˚C to +105˚C 

4Gb x4, x8 Yes 1.8V 400 MHz 63-ball FBGA 0˚C to +85˚C, –40˚C to +95˚C 

256Mb x4, x8, x16 Yes, 5/6 2.5–2.6V 167–200 MHz 

512Mb x4, x8, x16 Yes, 5/6 2.5–2.6V 167–200 MHz 

54-, 60-, 84-ball FBGA, 

66-pin TSOP 

54-, 60-, 84-ball FBGA, 

66-pin TSOP 

0˚C to +70˚C, –40˚C to +85˚C, 

–40˚C to +105˚C 

0˚C to +70˚C, –40˚C to +85˚C, 

–40˚C to +105˚C 

1Gb x4, x8, x16 Yes, 5/6 2.5V 133–167 MHz 66-pin TSOP 0˚C to +70˚C, –40˚C to +85˚C


MT48 SDRAM 

64Mb 

128Mb 

x4, x8, x16, 

x32 

x4, x8, x16, 

x32 

Yes, 5/6 3.3V 133–183 MHz 

Yes, 5/6 3.3V 133–167 MHz 

256Mb x4, x8, x16 Yes, 5/6 3.3V 133–167 MHz 

54-, 86-pin TSOP, 

54-, 90-ball VFBGA 

54-, -86-pin TSOP, 

54-, 90-ball VFBGA, 

60-ball FBGA 

54-pin TSOP, 


54-ball VFBGA 

0˚C to +70˚C, –40˚C to +85˚C, 

–40˚C to +105˚C 

0˚C to +70˚C, –40˚C to +85˚C, 

–40˚C to +105˚C 

0˚C to +70˚C, –40˚C to +85˚C, 

–40˚C to +105˚C 

512Mb x4, x8, x16 Yes, 5/6 3.3V 133 MHz 54-pin TSOP 0˚C to +70˚C, –40˚C to +85˚C 

MT47 Mobile LPDDR2 

2Gb x16, x32 Yes 1.2V 333–400 MHz 168-ball PoP –40˚C to +85˚C 

4Gb x16, x32, x64 Yes 1.2V 333–400 MHz 

8Gb x32, x64 Yes 1.2V 333–400 MHz 

MT46 Mobile LPDDR 

168-, 216-, 240-ball PoP, 

134-ball WFBGA 

168-, 216-, 

240-ball PoP 

128Mb x16, x32 Yes 1.8V 167–200 MHz 60-, 90-ball VFBGA 


512Mb x16, x32 Yes 1.8V 167–200 MHz 

1Gb x16, x32 Yes 1.8V 133–200 MHz 

2Gb x16, x32 Yes 1.8V 167–200 MHz 


90-ball WFBGA 


168-ball Po P 


168-ball PoP, Die 

–40˚C to +85˚C 

–40˚C to +85˚C 

0˚C to +70˚C, –40˚C to +85˚C, 

–40˚C to +105˚C 

0˚C to +70˚C, –40˚C to +85˚C, 

–40˚C to +105˚C 

–40˚C to +85˚C 

0˚C to +70˚C, –40˚C to +85˚C, 

–40˚C to +105˚C 

0˚C to +70˚C, –40˚C to +85˚C 

4Gb x32 Yes 1.8V 167–200 MHz 168-, 240-ball PoP –40˚C to +85˚C 

8Gb x32 Yes 1.8V 167–200 MHz 168-ball PoP –40˚C to +85˚C 

MT48 Mobile LPSDR 

64Mb x16 Yes 1.8V 125–133 MHz 54-ball VFBGA 0˚C to +70˚C, –40˚C to +85˚C 

128Mb x16, x32 Yes, 5/6 1.8–3.3V 125–167 MHz 54-, 90-ball VFBGA 


0˚C to +70˚C, –40˚C to +85˚C, 

–40˚C to +105˚C 

0˚C to +70˚C, –40˚C to +85˚C, 

–40˚C to +105˚C 

512Mb x16, x32 Yes 1.8V 133–167 MHz 54-, 90-ball VFBGA –40˚C to +85˚C 

1Gb x32 Yes 1.8V 133–167 MHz 90-ball VFBGA –40˚C to +95˚C 


MT49 RLDRAM ® 2 Memory 

288Mb x9, x18, x36 Yes, 5/6 1.8V 200–533 MHz 144-ball uBGA 0˚C to +95˚C, –40˚C to +95˚C 

576Mb x9, x18, x36 Yes, 5/6 1.8V 300–533 MHz 144-ball uBGA 0˚C to +95˚C, –40˚C to +95˚C 

MT44 RLDRAM 3 Memory 

576Mb x18, x36 Yes, 5/6 1.35V 800–1066 MHz 168-ball FBGA 0˚C to +95˚C, –40˚C to +95˚C 

7

8 

Density Bus Width RoHS Voltage Access Time Package Temp Range 

MT45 PSRAM CellularRAM ® Memory 

16Mb x16 

Yes, 

Green 

1.7–3.3V 70ns 48-, 54-ball VFBGA –40˚C to +85˚C, –40˚C to +105˚C 

32Mb x16 Green 1.7–3.6V 70ns 48-, 54-ball VFBGA –40˚C to +85˚C, –40˚C to +105˚C 

64Mb x16 Green 1.7–3.3V 70ns 48-, 54-ball VFBGA –40˚C to +85˚C, –30˚C to +85˚C 

128Mb x16 Green 1.7–3.6V 70ns, 85ns 54-ball VFBGA –40˚C to +85˚C, –40˚C to +105˚C 

Density 

Bus 

Width 

RoHS Voltage MT/s Technology Package Temp Range 

MT29 High-Speed NAND Flash Memory 

8Gb x8 Yes 1.8–3.3V 166–200 MT/s SLC 100-ball VBGA 0˚C to +70˚C, –40˚C to +85˚C 

16Gb x8 Yes 1.8–3.3V 166–200 MT/s SLC, MLC 100-ball VBGA, 48-pin TSOP 0˚C to +70˚C, –40˚C to +85˚C 

32Gb x8 Yes 1.8–3.3V 166–200 MT/s SLC, MLC 100-ball VBGA, 48-pin TSOP 0˚C to +70˚C, –40˚C to +85˚C 

64Gb x8 Yes 1.8–3.3V 166–200 MT/s SLC, MLC 



Density Bus Width RoHS Voltage Technology Package Temp Range 

MT29 Serial NAND Flash Memory 

100-ball TBGA, 100-ball VBGA, 

48-pin TSOP 

100-ball LBGA/VBGA/TBGA, 

48-pin TSOP 

48-pin TSOP, 100-ball LBGA, 

100-ball TBGA 

0˚C to +70˚C, –40˚C to +85˚C 

0˚C to +70˚C, –40˚C to +85˚C 

0˚C to +70˚C, –40˚C to +85˚C 

512Gb x8 Yes 1.8–3.3V 166–200 MT/s MLC 100-ball LBGA 0˚C to +70˚C 

1Gb x1 Yes 1.8–3.3V SLC 63-ball VFBGA 0˚C to +70˚C, –40˚C to +85˚C 



MT29E Enterprise NAND Flash Memory 

64Gb x8 Yes 3.3V MLC 100-ball VGBA 0˚C to +70˚C 

128Gb x8 Yes 3.3V MLC 132-ball VBGA 0˚C to +70˚C 

256Gb x8 Yes 3.3V MLC 132-ball TBGA 0˚C to +70˚C 

512Gb x8 Yes 3.3V MLC 132-ball LBGA 0˚C to +70˚C 

MT29 ClearNAND Flash Memory 

8Gb x8 Yes 3.3V – 52-pad VLGA 0˚C to +70˚C 

16Gb x8 Yes 3.3V – 52-pad VLGA 0˚C to +70˚C 

MT29 Enhanced ClearNAND Flash Memory 

64Gb x8 Yes 1.8–3.3V – 100-ball LBGA 0˚C to +70˚C

Density Bus Width RoHS Voltage Technology Package Temp Range 

MT29 NAND Flash Mass Storage Memory 

1Gb x1, x8, x16 Yes 1.8–3.3V SLC 63-ball VFBGA, 48-pin TSOP, Wafer 0˚C to +70˚C, –40˚C to +85˚C 

2Gb x1, x8, x16 Yes 1.8–3.3V SLC 63-ball VFBGA, 48-pin TSOP, Wafer 0˚C to +70˚C, –40˚C to +85˚C 

4Gb x8, x16 Yes 1.8–3.3V SLC 63-ball VFBGA, 48-pin TSOP, Wafer 0˚C to +70˚C, –40˚C to +85˚C 

8Gb x8, x16 Yes 1.8–3.3V SLC 

16Gb x8, x16 Yes 1.8–3.3V SLC, MLC 

NAND Small Page (SP) Flash Mass Storage Memory 

NAND 

Density 

Bus 

Width 

MT29 NAND Mobile LPDRAM MCPs 

1Gb x8, x16 

Mobile 

LPDDR 

Density 

256Mb, 

512Mb 

Mobile 

LPSDR 

Density 

256Mb, 

512Mb 

Secondary 

Bus Width 

x16, x32 Yes 1.7–1.9V TFBGA, VFBGA 

2Gb x8, x16 1Gb, 2Gb – x16, x32 Yes 1.7–1.9V TFBGA, VFBGA 

4Gb x8, x16 2Gb, 4Gb – x16, x32 Yes 1.7–1.9V 

63-ball VFBGA, 48-pin TSOP, 

100-ball VBGA, Wafer 

52-pad ULGA, 100-ball VBGA, 

48-pin TSOP, Wafer 

128Mb x8 No 3.0V SLC 48-pin TSOP –40˚C to +85˚C 

256Mb x8 Yes, No 3.0V SLC 48-pin TSOP, 55-ball VFBGA –40˚C to +85˚C 

512Mb x8 Yes 1.8–3.0V SLC 48-pin TSOP, 63-ball VFBGA –40˚C to +85˚C 

RoHS Voltage Package Pin Count Temp Range 

TFBGA, VFBGA, 

PoP 

107-, 130-, 137-, 

153-ball 

107-, 130-, 137-, 

153-ball 

107-, 137-, 

168-ball 

0˚C to +70˚C, –40˚C to +85˚C 

0˚C to +70˚C, –40˚C to +85˚C 

32Gb x8 Yes 1.8–3.3V SLC, MLC 100-ball VBGA, 48-pin TSOP, Wafer 0˚C to +70˚C, –40˚C to +85˚C 

64Gb x8 Yes 1.8–3.3V SLC, MLC 



100-ball VBGA, 48-pin TSOP, 

52-pad VLGA, 100-ball TBGA, Wafer 

48-pin TSOP, 52-pad VLGA, 

100-ball TBGA, 100-ball LBGA 

48-pin TSOP, 52-pad VLGA, 

100-ball LBGA, 100-ball TBGA 

0˚C to +70˚C, –40˚C to +85˚C 

0˚C to +70˚C, –40˚C to +85˚C 

0˚C to +70˚C, –40˚C to +85˚C 

512Gb x8 Yes 1.8–3.3V MLC 100-ball LBGA, 52-pad VLGA 0˚C to +70˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

8Gb x8, x16 4Gb – x32 Yes 1.7–1.9V TFBGA 137-ball –40˚C to +85˚C 

NOR 

Density 

Bus 

Width 

M39L0R, PF38F NOR/Mobile LPDRAM MCPs 

128Mb x16 

256Mb x16 

512Mb x16 

Mobile 

LPDDR 

Density 

128Mb, 

256Mb 

128Mb, 

512Mb 

256Mb, 

512Mb 

Secondary 

Bus Width 

x16 Yes 1.7–2.0V 133-ball BGA 

66 MHz/133 MHz, 

133 MHz/166 MHz 

–40˚C to +85˚C, 

–25˚C to +85˚C 

x16 Yes 1.7–2.0V 133-ball BGA 66 MHz/133 MHz –40˚C to +85˚C 

x16 Yes 1.7–2.0V 

128-ball PoP, 

133-ball BGA 

110 MHz/166 MHz, 

104 – 115 MHz/200 MHz 

–25˚C to +85˚C 

1Gb x16 512Mb x16 Yes 1.7–2.0V 165-ball BGA 133 MHz/166 MHz –25˚C to +85˚C 

Note: See data sheet for specific package options. 

RoHS Voltage Package 

Clock Rate 

(NOR/LPDDR) 

Temp Range 

9

NOR 

Density 

10 

NOR 

Density 

Bus 

Width 

Bus 

Width 

Mobile 

PSRAM 

Density 

Secondary 

Bus Width 

M36, N3, PF38F, JZ58F NOR/Mobile RAM MCPs 

32Mb x16 16Mb x16 Yes 1.8–3.0V 52-ball BGA, 88-ball Quad 66 MHz –30˚C to +85˚C 

64Mb x16 16Mb x16 Yes 1.8–3.0V 

64Mb x16 32Mb x16 Yes 1.8–3.0V 

Mobile NAND 

Density 

PF58F NOR/Mobile NAND MCPs 

1Gb x16 2Gb x16 Yes 1.7–2.0V 105-ball BGA 108 MHz –25˚C to +85˚C 

1Gb+512Mb x16 2Gb(2) x16 Yes 1.7–2.0V 165-ball BGA 108 MHz–133 MHz –25˚C to +85˚C 


Secondary 

Bus Width 

RoHS Voltage Package NOR Clock Rate Temp Range 

Density Bus Width RoHS Voltage Access Time Package Temp Range 

M58, PC48F, PC28F Parallel NOR Flash Mobile 

52-ball BGA, 

88-ball Quad 

52-, 56-ball BGA, 

88-ball Quad 

52–66 MHz/66 MHz –30˚C to +85˚C 

52–66 MHz/80–83 MHz –30˚C to +85˚C 

128Mb x16 16Mb x16 Yes 1.8V 44-ball BGA 66 MHz –25˚C to +85˚C 

128Mb x16 32Mb x16 Yes 1.8–3.0V 

128Mb x16 64Mb x16 Yes 1.8–3.0V 

56-, 80-ball BGA, 

88-ball Quad 

56-, 80-ball BGA, 

88-ball Quad 

52–66 MHz/80–104 MHz –25˚C to +85˚C 

52–66 MHz/83–104 MHz –25˚C to +85˚C 

128Mb x16 32Mb x16 Yes 1.7–2.0V 56-ball LPCP 133 MHz –25˚C to +85˚C 

128Mb x16 64Mb x16 Yes 1.7–2.0V 

56-ball LPCP, 

84-, 107-ball BGA 

133 MHz/104–133 MHz –25˚C to +85˚C 

256Mb x16 64Mb x16 Yes 1.8–3.0V 80-ball BGA, 88-ball Quad 52–66 MHz/104 MHz –25˚C to +85˚C 

256Mb x16 64Mb x16 Yes 1.7–2.0V 

256Mb x16 128Mb x16 Yes 1.7–2.0V 

56-ball LPCP, 88-ball Quad, 

107-ball BGA 

56-ball LPCP, 

84-, 107-ball BGA 

108–133 MHz/108–133 MHz –25˚C to +85˚C 

133 MHz/104–133 MHz –25˚C to +85˚C 

512Mb x16 128Mb x16 Yes 1.8V 64-ball VFBGA 104–110 MHz/104 MHz –25˚C to +85˚C 

512Mb x16 256Mb x16 Yes 1.8V 64-ball VFBGA 110 MHz/80–133 MHz –25˚C to +85˚C 

512Mb x16 128Mb x16 Yes 1.7–2.0V 

512Mb x16 128Mb (2) x16 Yes 1.7–2.0V 

56-ball LPCP, 104-ball PoP 

84-, 107-ball BGA, 

56-ball LPCP, 

107-ball BGA,104-ball PoP 

115–133 MHz/104–133 MHz –25˚C to +85˚C 

133 MHz/133 MHz –25˚C to +85˚C 

512Mb x16 256Mb x16 Yes 1.7–2.0V 56-ball LPCP 133 MHz –25˚C to +85˚C 

1Gb x16 128Mb (2) x16 Yes 1.7–2.0V 56-ball LPCP 133 MHz/104–133 MHz –25˚C to +85˚C 

1Gb x16 256Mb x16 Yes 1.7–2.0V 56-ball LPCP, 107-ball BGA 133 MHz/104–133 MHz –25˚C to +85˚C 


RoHS Voltage Package 

Clock Rate 

(NOR/PSRAM) 

Temp Range 

32Mb x16 Yes 1.7–2.0V 70ns 44-, 56-ball VFBGA –40˚C to +85˚C 

64Mb x16 Yes 1.7–2.0V 70ns 44-, 56-ball VFBGA –40˚C to +85˚C 

128Mb x16 Yes 1.7–2.0V 70ns, 96ns 56-ball VFBGA, 64-ball Easy BGA –30˚C to +85˚C 

Continued on page 11.

256Mb x16 Yes 1.7–2.0V 70ns, 96ns 


N25W Serial (SPI) NOR Flash Mobile 

Density Bus Width RoHS Voltage Speed Package Type Temp Range 

N25Q Serial NOR Flash Embedded 

32Mb x1/x2/x4 Yes 





1Gb x1/x2/x4 Yes 

Notes: Available in tray, tube, and tape & reel. 

1.7–2.0V, 

2.7–3.6V 

1.7–2.0V, 

2.7–3.6V 

1.7–2.0V, 

2.7–3.6V 

1.7–2.0V, 

2.7–3.6V 

1.7–2.0V, 

2.7–3.6V 

1.7–2.0V, 

2.7–3.6V 

M25P Serial NOR Flash Embedded 

108 MHz 

108 MHz 

108 MHz 

108 MHz 

8-pin SO, 16-pin SO, 

24-ball T-PBGA, 8-pin DFN, 

Wafer 



Wafer 



Wafer 

16-pin SO, 24-ball T-PBGA, 

8-pin DFN, Wafer 

Multi I/O –40˚C to +85˚C 




108 MHz 16-pin SO, 24-ball T-PBGA Multi I/O –40˚C to +85˚C 

108 MHz 24-ball T-PBGA Multi I/O –40˚C to +85˚C 

512K x1 Yes 2.3–3.6V 50 MHz 8-pin DFN, 8-pin SO, Wafer Data Storage –40˚C to +85˚C 

1Mb x1 Yes 2.3–3.6V 50 MHz 8-pin DFN, 8-pin SO, Wafer Data Storage –40˚C to +85˚C 

2Mb x1 Yes 2.3–3.6V 75 MHz 8-pin SO, 8-pin DFN, Wafer Data Storage –40˚C to +85˚C 

4Mb x1 Yes 2.3–3.6V 75 MHz 8-pin DFN, 8-pin SO, Wafer Data Storage –40˚C to +85˚C 

8Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SO, 8-pin DFN, Wafer Data Storage –40˚C to +85˚C 

16Mb x1 Yes 2.7–3.6V 75 MHz 

32Mb* x1 Yes 2.7–3.6V 75 MHz 

64Mb* x1 Yes 2.7–3.6V 75 MHz 

128Mb* x1 Yes 2.7–3.6V 50 MHz 

Notes: *Not recommended for new designs. Contact the Micron factory for more information. 

Available in tray, tube, or tape & reel. 

88-ball Quad, 79-ball VFBGA, 

64-ball Easy BGA, 107-ball BGA 

16-pin SO, 8-pin DFN, 

8-pin SO, Wafer 


8-pin DFN 

8-pin DFN, 

16-pin SO, Wafer 

8-pin DFN, 

16-pin SO 

–30˚C to +85˚C 

512Mb x16 Yes 1.7–2.0V 96ns 64-ball Easy BGA, 105-ball BGA –30˚C to +85˚C 

1Gb x16 Yes 1.7–2.0V 96ns 64-ball Easy BGA, 105-ball BGA –30˚C to +85˚C 


32Mb x1, x4 Yes 1.7–2.0V 108 MHz 8-pin VDFPN –25˚C to +85˚C 



Data Storage –40˚C to +85˚C 




11

12 


M25PX Serial NOR Flash Embedded 

8Mb x1/x2 Yes 2.3–3.6V 75 MHz 

16Mb x1/x2 Yes 2.3–3.6V 75 MHz 

32Mb* x1/x2 Yes 2.7–3.6V 75 MHz 

64Mb* x1/x2 Yes 2.7–3.6V 75 MHz 


1Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SO, 8-pin DFN, Wafer Page Erase –40˚C to +85˚C 

2Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SO, 8-pin DFN, Wafer Page Erase –40˚C to +85˚C 

4Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SO, 8-pin DFN Page Erase –40˚C to +85˚C 


16Mb x1 Yes 2.7–3.6V 75 MHz 8-pin DFN, 8-pin SO Page Erase –40˚C to +85˚C 

Note: Available in tray, tube, or tape & reel. 






16Mb x1 Yes 2.7–3.6V 75 MHz 8-pin VDFN, 8-pin SO Page Erase –40˚C to +85˚C 

Note: Available in tray, tube, and tape & reel. 

Density Bus Width RoHS Voltage Speed Package Boot Block Temp Range 

M29EW Parallel NOR Flash Embedded 

32Mb x8/x16 Yes 2.7–3.6V 60ns, 70ns 

64Mb x8/x16 Yes 2.7–3.6V 60ns, 70ns 

128Mb x8/x16 Yes, No 2.7–3.6V 60ns, 70ns 

256Mb x8/x16 Yes, No 2.7–3.6V 

512Mb x8/x16 Yes, No 2.7–3.6V 

1Gb x8/x16 Yes, No 2.7–3.6V 

100ns, 

110ns 

100ns, 

110ns 

100ns, 

110ns 

48-pin TSOP, 

48-ball BGA 

48-, 56-pin TSOP, 

64-ball FBGA, 

48-ball BGA 

56-pin TSOP, 

64-ball FBGA 

56-pin TSOP, 

64-ball FBGA, 

64-ball Easy BGA 

56-pin TSOP, 

64-ball FBGA 

56-pin TSOP, 

64-ball FBGA 

Bottom/Top Boot, 

High/Low Lock 


High/Low Lock, 

Secure 


Secure 


Secure 


Secure 


Secure 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

2Gb x8/x16 Yes, No 2.7–3.6V 110ns 64-ball FBGA High/Low Lock –40˚C to +85˚C 

Notes: All parts available in tray or tape & reel. 

8-pin SO, 24-ball T-PBGA, 

8-pin DFN 

8-pin SO, 24-ball TBGA, 

24-ball T-PBGA, 8-pin DFN 


24-ball TBGA, 


16-pin SO, 24-ball TBGA, 


Notes: Not recommended for new designs. Contact the Micron factory for more information. Available in tray, tube, and tape & reel. 

Dual I/O –40˚C to +85˚C 



Dual I/O –40˚C to +85˚C



4Mb x8/x16 Yes 2.7–3.6V 

45ns, 55ns, 

70ns 

8Mb x8/x16 Yes 2.7–3.6V 45ns, 70ns 

16Mb x8/x16 Yes 2.7–3.6V 70ns 

32Mb x8/x16 Yes 2.7–3.6V 70ns 

64Mb x8/x16 Yes 2.7–3.6V 

128Mb x8/x16 Yes 2.7–3.6V 

60ns, 70ns, 

90ns 

60ns, 70ns, 

90ns 

256Mb x8/x16 Yes 2.7–3.6V 70ns 

Notes: All parts available in tray or tape & reel. 

M29DW Parallel NOR Flash Embedded 

32Mb* x8/x16 Yes, No 2.7–3.6V 70ns 

128Mb x8/x16, x16 Yes 2.7–3.6V 60ns, 70ns 

256Mb x16 Yes 2.7–3.6V 70ns 

48-ball TFBGA, 

48-pin TSOP 


48-pin TSOP 

64-ball FBGA, 


48-pin TSOP 

64-ball FBGA, 


48-pin TSOP 

64-ball FBGA, 


48-pin TSOP, 

64-ball TBGA 

64-ball FBGA, 

64-ball TBGA, 

56-pin TSOP 

64-ball FBGA, 

64-ball TBGA, 

56-pin TSOP 

48-pin TSOP, 

48-ball-TFBGA 

64-ball TBGA, 

56-pin TSOP 

56-, 64-pin TSOP, 

64-ball TBGA 

Notes: 32Mb part is qualified for Embedded and Automotive. All parts available in tray or tape & reel. 


64Mb x16 Yes, No 2.3–3.6V 

128Mb x16 Yes, No 2.3–3.6V 

256Mb x16 Yes, No 2.3–3.6V 

512Mb x16 Yes, No 2.3–3.6V 

1Gb x16 Yes 2.3–3.6V 

2Gb x16 Yes 2.3–3.6V 

Note: Available in tray or tape & reel. 

60ns, 70ns 

52 MHz/Sync 

60ns, 70ns 

52 MHz/Sync 

95ns 

52 MHz/Sync 

95ns 

52 MHz/Sync 

95ns 

52 MHz/Sync 

100ns 

52 MHz/Sync 

56-pin TSOP, 


56-pin TSOP, 


56-pin TSOP, 


56-pin TSOP, 




Bottom/Top Boot –40˚C to +85˚C 






Secure 


Secure 


Secure 

Bottom Boot 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

Multi Bank –40˚C to +85˚C 

Multi Bank –40˚C to +85˚C 


OTP 


OTP 


OTP 


Uniform, OTP 


Uniform 


Uniform 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

13

14 



64Mb x16 Yes, No 




1Gb x16 Yes 

2Gb x16 Yes 


G18 Parallel NOR Flash Embedded 

128Gb x16 Yes 1.7–2.0V 

256Gb x16 Yes 1.7–2.0V 

512Gb x16 Yes 1.7–2.0V 

1Gb x16 Yes 1.7–2.0V 


J3 Parallel NOR Flash Embedded 

32Mb x8/x16 Yes, No 2.7–3.6V 75ns 

64Mb x8/x16 Yes, No 2.7–3.6V 75ns 

128Mb x8/x16 Yes, No 2.7–3.6V 75ns 

256Mb x8/x16 Yes, No 2.7–3.6V 95ns, 105ns 


1.7–2.0V, 

2.3–3.6V 

1.7–2.0V, 

2.3–3.6V 

1.7–2.0V, 

2.3–3.6V 

1.7–2.0V, 

2.3–3.6V 

1.7–2.0V, 

2.3–3.6V 

1.7–2.0V, 

2.3–3.6V 


65ns, 75ns 

52 MHz/Sync 

65ns, 75ns 

52 MHz/Sync 

100ns, 110ns 

52 MHz/Sync 

100ns, 110ns 

52 MHz/Sync 

100ns, 110ns 

52 MHz/Sync 

105ns 

52 MHz/Sync 

96ns 

133 MHz/Sync 

96ns 

133 MHz/Sync 

96ns 

133 MHz/Sync 

96ns 

133 MHz/Sync 

16Mb x16 Yes 2.7–3.6V 70ns 

32Mb x16 Yes 2.7–3.6V 70ns 

64Mb x16 Yes 2.7–3.6V 70ns 

56-pin TSOP, 


56-pin TSOP, 

64-ball Easy BGA, 

88-ball Quad+ BGA 

56-pin TSOP, 



56-pin TSOP, 



56-pin TSOP, 


64-ball Easy BGA Uniform –40˚C to +85˚C 




48-pin TSOP, 


56-pin TSOP, 


56-pin TSOP, 


56-pin TSOP, 


48-pin TSOP, 

46-ball TFBGA 

48-pin TSOP, 

47-ball TFBGA 

48-pin TSOP, 

47-ball TFBGA 


OTP 


OTP 


OTP 


Uniform 


Uniform 

Uniform, 

In Sys Pgm 

Uniform, 

In Sys Pgm 

Uniform, 

In Sys Pgm 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 


–40˚C to +85˚C 

–40˚C to +85˚C 

–40˚C to +85˚C 

Uniform –40˚C to +85˚C 




Notes: Available in tray or tape & reel. Features: Hardware write protection, OTP space, one-time programming SD, Krypto Flex Lock, Krypto Encrypted Access SD.


N25Q Serial NOR Flash Automotive 

32Mb* x1/x2/x4 Yes 2.7–3.6V 108 MHz 8-pin SO Multi I/O 



Notes: Contact Micron factory for production status of parts. Available in tape & reel. 

M25PX Serial NOR Flash Automotive 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

16Mb x1/x2 Yes 2.7–3.6V 75 MHz 8-pin SO, 24-ball TBGA Dual I/O –40˚C to +85˚C 

32Mb x1/x2 Yes 2.7–3.6V 75 MHz 6x5 MLP, 24-ball TBGA Dual I/O –40˚C to +85˚C 

64Mb x1/x2 Yes 2.7–3.6V 75 MHz 16-pin SO, 24-ball TBGA Dual I/O 

–40˚C to +85˚C, 

–40˚C to +125˚C 

Note: 16-pin SO, –40˚C to +125˚C available in tube only. 24-ball TBGA, –40˚C to +85˚C available in tape & reel only. All other products available in tube and tape & reel. 

M25PE Serial NOR Flash Automotive 

1Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SO Page Erase –40˚C to +125˚C 




Note: Available in tape & reel. 

M25P Serial NOR Flash Automotive 

1Mb x1 Yes 2.3–3.6V 50 MHz 8-pin SO Data Storage 


–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

4Mb x1 Yes 2.3–3.6V 75 MHz 8-pin SO Data Storage –40˚C to +85˚C 


16Mb x1 Yes 2.7–3.6V 75 MHz 16-pin SO, 8-pin SO Data Storage 




–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

15

16 


M29F Parallel NOR Flash Automotive 

2Mb x8/x16 Yes 4.5–5.5V 55ns 

4Mb x8/x16 Yes, No 4.5–5.5V 55ns 

8Mb x8/x16 Yes 4.5–5.5V 55ns 

M29W Parallel NOR Flash Automotive 

4Mb x8/x16 Yes 2.7–3.6V 55ns 

8Mb x8/x16 Yes 2.7–3.6V 70ns 

16Mb x8/x16 Yes 2.7–3.6V 70ns, 80ns 

32Mb x8/x16 Yes 2.7–3.6V 70ns, 80ns 

64Mb x8/x16 Yes 2.7–3.6V 60ns, 70ns 

128Mb x8/x16 Yes 2.7–3.6V 70ns 

256Mb x8/x16 Yes 2.7–3.6V 70ns 


M29DW Parallel NOR Flash Automotive 

32Mb* x8/x16 Yes 2.7–3.6V 55ns 48-pin TSOP Multi Bank –40˚C to +85˚C 

32Mb x8/x16 Yes 2.7–3.6V 70ns 48-pin TSOP Multi Bank 

M29AW Parallel NOR Flash Automotive 

–40˚C to +125˚C, 

–40˚C to +85˚C 

256Mb x16 Yes 2.7–3.6V 70ns 56-pin TSOP Multi Bank –40˚C to +85˚C 

Note: *Contact Micron factory for production status of 32Mb, 55ns part. 

Available in tray or tape & reel. 

44-pin SOIC, 

48-pin TSOP 

44-pin SOIC, 

48-pin TSOP 

44-pin SOIC, 

48-pin TSOP 

48-pin TSOP, 

48-ball TFBGA 


48-pin TSOP 


48-pin TSOP 


48-pin TSOP 


48-pin TSOP, 

64-ball TBGA 

64-ball FBGA, 

64-ball TBGA, 

56-pin TSOP 

64-ball FBGA, 

64-ball TBGA, 

56-pin TSOP 

Bottom/Top Boot 



16Mb x8/x16 Yes 4.5–5.5V 55ns 48-pin TSOP Bottom/Top Boot 


512Mb x8, x16 Yes 2.7–3.6V 100ns 

1Gb x16 Yes 2.7–3.6V 100ns 

Notes: Available in tape & reel. 

56-pin TSOP, 

56-ball BGA 

56-pin TSOP, 

56-ball BGA 






High/Low Lock 

High/Low Lock 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

–40˚C to +85˚C, 

–40˚C to +125˚C 

High/Low Lock –40˚C to +85˚C 

High/Low Lock –40˚C to +85˚C 

High/Low Lock –40˚C to +85˚C


M58BW Parallel NOR Flash Automotive 

16Mb x32 Yes, No 2.7–3.6V 

M58WR Parallel NOR Flash Automotive 

45ns, 55ns, 

70ns 

32Mb x32 Yes, No 2.7–3.6V 45ns, 55ns 

Note: Available in tape & reel. 

80-ball LBGA, 

80-ball PQFP, 

80-pin PQFP 

80-ball LBGA, 

80-pin PQFP 

Bottom Boot –40˚C to +125˚C 

Bottom Boot –40˚C to +125˚C 

32Mb x16 Yes 1.7–2.0V 70ns 56-ball VFBGA Bottom Boot –40˚C to +85˚C 

64Mb x16 Yes 1.7–2.0V 70ns 56-ball VFBGA Bottom/Top Boot –40˚C to +85˚C 


e •MMC (Embedded MultiMediaCard ) Memory 

Our e •MMC embedded memory combines high-quality, low-cost NAND Flash memory with a high-speed, JEDECcompliant 

MultiMediaCard (MMC) controller in a single, low-profile BGA package. The single-package solution is a 

great choice for designers who are looking for MMC-like, application-to-application interoperability. And because we 

manufacture the NAND, we can offer e •MMC solutions in a variety of densities and options; contact us for inquiries 

and more information. 


P5Q Serial Phase Change Memory (PCM) 

32Mb x8 Yes 2.7–3.6V 33 MHz 16-pin SOIC –40˚C to +85˚C 

64Mb x8 Yes 2.7–3.6V 33 MHz 16-pin SOIC –40˚C to +85˚C 

128Mb x8 Yes 2.7–3.6V 33–66 MHz 16-pin SOIC 0˚C to +70˚C, –40˚C to +85˚C 

Density Bus Width RoHS Voltage Package Boot Block Temp Range 

P8P Parallel Phase Change Memory (PCM) 

128Mb x16 Yes 2.7–3.6V 

128Mb x16 Yes 2.7–3.6V 

Bare Die and Wafer-Level Products 

64-ball BGA, 

56-pin TSOP 

64-ball BGA, 

56-pin TSOP 

Bottom Boot 0˚C to +70˚C, –40˚C to +85˚C 

Top Boot 0˚C to +70˚C, –40˚C to +85˚C 

Requirements for increasingly smaller form factors and higher memory densities are fueling the need for an array of 

bare-die memory solutions. Our bare-die offerings are designed to enable you to choose the wafer-level products that 

best meet your project’s needs. And we’re committed to delivering bare-die products that maintain reliability and quality 

levels similar to our fully tested and burned-in packaged devices. Find out more at micron.com/baredie 

17

Modules 

Density Bus Width 

Component 

Count 

DDR3 SDRAM 240-pin RDIMM 

The memory 

Experts 

1GB x72 9 Green 1.35–1.5V 1333–1600 MT/s Single 0˚C to +95˚C 

2GB x72 9, 18 Green 1.35–1.5V 1333–1866 MT/s Single, Dual 0˚C to +95˚C 

4GB x72 9, 18, 36 Green 1.35–2.5V 1333–1866 MT/s Single, Dual, Quad 0˚C to +95˚C 

8GB x72 18, 36 Green 1.35–1.5V 1333–1866 MT/s Single, Dual, Quad 0˚C to +95˚C 

16GB x72 36, 72 Green 1.35–1.5V 1333–1600 MT/s Dual, Quad 0˚C to +95˚C 

32GB x72 72 Green 1.35–1.5V 1333 MT/s Quad 0˚C to +95˚C 

DDR3 SDRAM 240-, 244-pin Mini RDIMM 


2GB x72 9, 18 Green 1.35–1.5V 1333 MT/s Single, Dual 0˚C to +95˚C 




32GB x72 72 Green 1.5V 1066 MT/s Quad 0˚C to +95˚C 

DDR3 SDRAM 240-pin LRDIMM 

RoHS Voltage Data Rate Module Ranks Temp Range 

4GB x72 18 Green 1.5V 1333 MT/s Dual 0˚C to +95˚C, –40˚C to +95˚C 

8GB x72 18 Green 1.35V 1333 MT/s Single 0˚C to +95˚C, –40˚C to +95˚C 

8GB x72 36 Green 1.35V 1333 MT/s Dual, Quad 0˚C to +95˚C 

16GB x72 36, 72 Green 1.35V 1333 MT/s Dual, Quad 0˚C to +95˚C 


64GB x72 144 Green 1.35V 1333 MT/s Eight 0˚C to +95˚C 

DDR3 SDRAM 240-pin VLP LRDIMM 


16GB x72 36 Green 1.35V 1333 MT/s Quad 0˚C to +95˚C


Component 

Count 




1GB x64 4, 8 Green 1.35–1.5V 1333–1600 MT/s Single 0˚C to +95˚C 

2GB x64 4, 8, 16 Green 1.35–1.5V 1333–1600 MT/s Single, Dual 0˚C to +95˚C 


8GB x64 16 Green 1.35–1.5V 1333–1600 MT/s Dual 0˚C to +95˚C 

DDR3 SDRAM 204-pin ECC SODIMM 

2GB x72 18, 36 Green 1.35V 1333 MT/s Dual 0˚C to +95˚C 



16GB x72 18, 36 Green 1.35V 1333 MT/s Quad 0˚C to +95˚C 

1GB x64 4, 8 Green 1.35–1.5V 1333–1600 MT/s Single 0˚C to +95˚C 

2GB x64 4, 8, 16 Green 1.35–1.5V 1333–1600 MT/s Single, Dual 0˚C to +95˚C 



DDR3 SDRAM 240-pin ECC UDIMM 


2GB x72 9,18 Green 1.35–1.5V 1066–1866 MT/s Single, Dual 0˚C to +95˚C 



DDR3 SDRAM 240-pin VLP ECC UDIMM 


4GB x72 9,18 Green 1.35–1.5V 1333–1600 MT/s Single, Dual 0˚C to +95˚C 


DDR3 SDRAM 240-, 244-pin Mini UDIMM 

2GB x72 9 Green 1.5V 1333 MT/s Single 0˚C to +95˚C, –40˚C to +95˚C 

4GB x72 9,18 Green 1.35–1.5V 1333 MT/s Single, Dual 0˚C to +95˚C, –40˚C to +95˚C 

8GB x72 18 Green 1.35V 1333 MT/s Dual 0˚C to +95˚C, –40˚C to +95˚C 

19

20 


Component 

Count 

DDR2 SDRAM 240-pin RDIMM 

DDR2 SDRAM 240-pin FBDIMM 


512MB x72 9 Yes 1.8V 667 MT/s Single 0˚C to +85˚C 

1GB x72 9, 18 Yes 1.8V 667–800 MT/s Single 0˚C to +85˚C 

2GB x72 18, 36 Yes, Green 1.8V 667–800 MT/s Single, Dual 0˚C to +85˚C 

4GB x72 36 Yes 1.8V 667–800 MT/s Dual 0˚C to +85˚C 

8GB x72 36, 72 Yes 1.8V 667–800 MT/s Single, Quad 0˚C to +85˚C 



1GB x72 9,18 Yes 1.8V 667–800 MT/s Single 0˚C to +85˚C 

2GB x72 18 Yes 1.8V 667–800 MT/s Single, Dual 0˚C to +85˚C 

4GB x72 36 Yes 1.8V 667–800 MT/s Dual 0˚C to +85˚C 



4GB x72 36 Yes, Green 1.8V 667–800 MT/s Dual , Quad 0˚C to +95˚C 

8GB x72 36, 72 Yes 1.8V 667–800 MT/s Single, Quad 0˚C to +95˚C 


256MB x64 4 Yes 1.8V 667–800 MT/s Single 0˚C to +85˚C 

512MB x64 4, 8 Yes, Green 1.8V 667–800 MT/s Single, Dual 0˚C to +85˚C 

1GB x64 4, 8, 16 Yes, Green 1.8V 667–800 MT/s Single, Dual 0˚C to +85˚C 

2GB x64 8, 16 Yes, 5/6 1.8V 667–800 MT/s Single, Dual 0˚C to +85˚C 

4GB x64 16 Yes 1.8V 800 MT/s Dual Rank 0˚C to +85˚C 



1GB x64, x72 8, 9, 16, 18 Yes, Green 1.8V 667–1066 MT/s Single, Dual 0˚C to +85˚C 

2GB x64, x72 8, 9, 16, 18 Yes 1.8V 667–1066 MT/s Single, Dual 0˚C to +85˚C 

4GB x64 16 Yes 1.8V 800 MT/s Dual 0˚C to +85˚C 

DDR2 SDRAM 200-pin SORDIMM 


1GB x72 9 Yes 1.8V 800 MT/s Single 0˚C to +85˚C 


DDR2 SDRAM 244-pin VLP MiniDIMM 


1GB x72 9 Yes 1.8V 800 MT/s Single 0˚C to +85˚C 


DDR SDRAM 184-pin RDIMM 


512MB x72 9 Yes 2.5–2.6V 333–400 MT/s Single 0˚C to +70˚C 

1GB x72 18 Yes, 5/6 2.5–2.6V 333–400 MT/s Single, Dual 0˚C to +70˚C 

2GB x72 36 Yes, 5/6 2.5–2.6V 333–400 MT/s Dual 0˚C to +70˚C


Component 

Count 

DDR SDRAM 184-pin VLP RDIMM 

DDR SDRAM 184-pin UDIMM 



1GB x72 18 Yes 2.5V 333–400 MT/s Single, Dual 0˚C to +70˚C 

DDR SDRAM 200-pin SODIMM 

128MB x64 4 Yes 2.5–2.6V 333–400 MT/s Single 0˚C to +70˚C 

256MB x64, x72 4, 8, 9 Yes, 5/6 2.5–2.6V 333–400 MT/s Single, Dual 0˚C to +70˚C, –40˚C to +95˚C 

512MB x64, x72 8, 9 Yes, 5/6 2.5–2.6V 333–400 MT/s Single, Dual 0˚C to +70˚C, –40˚C to +95˚C 

1GB x64, x72 16, 18 Yes 2.5–2.6V 333–400 MT/s Dual 0˚C to +70˚C, –40˚C to +95˚C 

128MB x72 5 Yes 2.5 400 MT/s Single 0˚C to +70˚C 

256MB x64, x72 4, 5 Yes 2.5 400 MT/s Single 0˚C to +70˚C 

512MB* 

x32, x64, 

x72 

8, 9 Yes, 5/6 2.5–2.6V 333–400 MT/s Single, Dual 0˚C to +70˚C 

1GB x64, x72 16, 18 Yes, 5/6 2.5–2.6V 400 MT/s Dual 0˚C to +70˚C 

Note: 512MB part also available in 100-pin package. 


Component 

Count 

SDRAM 168-pin RDIMM 

RoHS Voltage Clock Rate Module Ranks Temp Range 

128MB x72 9 Yes, 5/6 3.3V 133 MHz Single 0˚C to +70˚C 

256MB x72 9, 18 Yes, 5/6 3.3V 133 MHz Single, Dual 0˚C to +70˚C 

512MB x72 18 Yes, 5/6 3.3V 133 MHz Single, Dual 0˚C to +70˚C 

1GB x72 18, 36 Yes, 5/6 3.3V 133 MHz Dual 0˚C to +70˚C 

2GB x72 36 5/6 3.3V 133 MHz Dual 0˚C to +70˚C 

SDRAM 144-pin SODIMM 

64MB x64 4 Yes, 5/6 3.3V 133 MHz Single 0˚C to +70˚C, –40˚C to +85˚C 

128MB x64 4, 8 Yes, 5/6 3.3V 133 MHz Single 0˚C to +70˚C, –40˚C to +85˚C 

256MB x64 8, 16 Yes, 5/6 3.3V 133 MHz Dual 0˚C to +70˚C, –40˚C to +85˚C 

512MB x64 8, 16 Yes, 5/6 3.3V 133 MHz Dual 0˚C to +70˚C, –40˚C to +85˚C 

SDRAM 100-, 168-pin UDIMM 

32MB* x72 4 5/6 3.3V 125 MHz Single 0˚C to +70˚C 

64MB x72 4 Yes, 5/6 3.3V 100–133 MHz Single 0˚C to +70˚C 

128MB x72 4, 8, 9 Yes, 5/6 3.3V 125–133 MHz Single, Dual 0˚C to +70˚C 

256MB x72 8, 9, 16, 18 Yes, 5/6 3.3V 133 MHz Single, Dual 0˚C to +70˚C 

512MB* x72 16, 18 Yes, 5/6 3.3V 133 MHz Dual 0˚C to +70˚C 

1GB* x72 16 5/6 3.3V 133 MHz Dual 0˚C to +70˚C 

Notes: Contact Micron factory for production status of 1GB part. 32MB part available only in 100-pin package; 512MB part available only in 168-pin package. 

21

Storage Devices 

Client-Class Solid State Drives (SSDs) 

Density Package 

RealSSD C400 

RealSSD C400 Self-Encrypting Drive (SED) 

RealSSD C400v 

RealSSD C400 mSATA 

READ 

Performance 

WRITE 

Performance 

The memory 

Experts 

Voltage Interface Temp Range 

128GB 1.8” SSD up to 500 MB/s up to 175 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 

128GB 2.5” SSD up to 500 MB/s up to 175 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 













32GB mSATA up to 440 MB/s up to 50 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 



256GB mSATA up to 500 MB/s up to 260 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C

Enterprise-Class Solid State Drives (SSDs)* 

Density Package 

RealSSD P400e SATA 

RealSSD P300 SATA 

50GB 2.5” SSD 60K IOP/s 45K IOP/s 360 MB/s 275 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 



RealSSD P320h PCIe 

350GB HHHL PCIe 

700GB HHHL PCIe 

Random 

READ 

Up to 

785K IOP/s 

Up to 

785K IOP/s 

Random 

WRITE 

Up to 

205K IOP/s 

Up to 

205K IOP/s 

Sequential 

READ 





Up to 

3.2 GB/s 

Up to 

3.2 GB/s 

Sequential 

WRITE 

Up to 

1.9 GB/s 

Up to 

1.9 GB/s 

Density Package RoHS Voltage Interface Temp Range 

Embedded USBs 

2GB eUSB Yes 5V USB 2.0 0˚C to +70˚C, –40˚C to +85˚C 




Voltage Interface Temp Range 

12V PCIe (Gen2-compliant) x8 0˚C to +50˚C 

12V PCIe (Gen2-compliant) x8 0˚C to +50˚C 

23

Part Numbering Guides 

DDR3, DDR2, DDR, SDRAM, Mobile LPDDR2/LPDDR/LPSDR, 

and RLDRAM ® Memory 

Micron Technology 

Product Family 

41 = DDR3 SDRAM 

42 = Mobile LPDDR2 

44 = RLDRAM ® 3 Memory 

46 = DDR SDRAM/Mobile LPDDR 

47 = DDR2 SDRAM 

48 = SDRAM/Mobile LPSDR 

49 = RLDRAM 1 & 2 Memory 

Process Technology 

C = 5.0V VCC CMOS 

G = 3.0V VDD CMOS 

H = 1.8V VDD CMOS 

HC = 1.8V VDD CMOS, 1.2V I/O 

J = 1.5V VDD CMOS 

K = 1.35V VDD CMOS 

Device Number (depth, width) 

Blank = Bits 

K = Kilobits 

Device Versions 

Alphanumeric character(s) specified by individual data sheet 

“L2,” “S2,” and “S4” devices are made with dual die in package. 

Mobile devices 

C1 = Single die, 2-n prefetch 

C2 = 2-die stack, 2-n prefetch 

D1 = Single die, 4-n prefetch 

D2 = 2-die stack, 4-n prefetch 

LF = Single die, standard addressing 

LG = Single die, reduced-page size addressing 

L2 = 2-die stack, standard addressing 

LA = 2-die stack, reduced-page size addressing 

RLDRAM only 

Blank = Common I/O 

C = Separate I/O 

Package Codes 1 

Lead 

Plating 

DDR4 SDRAM 

– 

– 

DDR3 SDRAM 

– 

– 

– 

– 

– 

– 

– 

M = Megabits 

G = Gigabits 

Pb-Free/RoHS- 

Compliant Plating 

HA 

HX 

DA 

HA 

HX 

JP 

JT 

RA 

RE 

L = 1.2V VDD CMOS 

LC = 3.3V VDD CMOS 

N = 1.0V VDD CMOS 

R = 1.55V VDD CMOS 

V = 2.5V VDD CMOS 

FBGA (96-ball, 9 x 14) 

FBGA (78-ball, 9 x 11.5) 

MT 48 LC 32M8 A2 P - 7E L ES :D 

Package Description 2 

FBGA (78-ball, 8 x 10.5) 

FBGA (96-ball, 9 x 14) 

FBGA (78-ball, 9 x 11.5) 

FBGA (78-ball, 8 x 11.5) 

FBGA (96-ball, 8 x 14) 

FBGA (78-ball, 10.5 x 12) 

FBGA (96-ball, 10.5 x 12) 

1 Package codes continued on page 26. 

Die Revision Designator 

Special Processing 

ES = Engineering sample 

MS = Mechanical sample 

Operating Temperatures 

3 The number one (1) and the capital letter “I” 

utilize the same laser mark—“I” 

Special Options 

(Multiple processing codes are separated by 

a space and are listed in hierarchical order) 

L = Low Power 

DRAM 

Technology 

Blank = Commercial Temperature 

IT/AIT = Industrial Temperature 

AT/AAT = Automotive Temperature 

Speed Grade 

Mark 

All DRAM -0 

-A 

Speed Grade 

Mark 

DDR4 SDRAM 

-125 

-107 

-093 

-083 

DDR3 SDRAM 

-25 

-25E 

-187 

-187E 

-187F 

-15 

-15E 

-15F 

-15H 

-125 

-125E 

-125H 

-107 

-093 

DDR2 SDRAM 

-5E 

-37E 

-3 

-3E 

-25 

-25E 

-187E 

Access/Cycle Time 

MAX Clock 

Frequency 

800 MHz 

933 MHz 

1067 MHz 

1200 MHz 

400 MHz 

400 MHz 

533 MHz 

533 MHz 

533 MHz 

667 MHz 

667 MHz 

667 MHz 

667 MHz 

800 MHz 

800 MHz 

800 MHz 

933 MHz 

1067 MHz 

200 MHz 

267 MHz 

333 MHz 

333 MHz 

400 MHz 

400 MHz 

533 MHz 

t RAC Access 

Time 

Untested 

Untested 

PC Targets 

CL- t RCD- t RP 

11-11-11 

13-13-13 

14-14-14 

16-16-16 

6-6-6 

5-5-5 

8-8-8 

7-7-7 

6-6-6 

10-10-10 

9-9-9 

8-8-8 

10-9-9 

11-11-11 

10-10-10 

12-11-11 

13-13-13 

14-14-14 

3-3-3 

4-4-4 

5-5-5 

4-4-4 

6-6-6 

5-5-5 

7-7-7 

Access/cycle time continued on page 26.

DRAM Component Part Numbering (Continued) 

Package Codes Access/Cycle Time 

Lead 

Plating 

Pb-Free/RoHS- 

Compliant Plating 

DDR3 SDRAM (continued) 

– 

– 

– 

– 

– 

– 

– 

– 

– 

– 

DDR2 SDRAM 

FP 

FG 

JN 

HW 

FN 

HV 

HW 

PK 

– 

– 

– 

– 

– 

– 

– 

– 

DDR SDRAM 

CV 

FG 

FN 

TG 

SDRAM 

FB 

FG 

F4 

F5 

TG 

xTG 

Mobile LPDDR2 

– 

– 

– 

Mobile LPDDR 

– 

– 

– 

– 

– 

– 

Mobile LPSDR 

– 

– 

– 

– 

– 

RLDRAM 1 & 2 

FM 

HU 

RLDRAM 3 

PA 

PKM 

RH 

SHM 

STA 

THD 

THE 

THG 

THV 

THA 

THW 

TRF 

BP 

BG 

CF 

HR 

BN 

HQ 

HR 

RT 

HG 

EB 

WTR 

THM 

THN 

THN 

WTR 

THT 

CY 

BG 

BN 

P 

BB 

BG 

B4 

B5 

P 

xP 

KH 

KJ 

KL 

BF 

B5 

CF 

CK 

CM 

CX 

B4 

B5 

BF 

CJ 

CM 

BM 

HT 

RB 

RCT 

Package Description 3 

FBGA (78-ball, 9 x 10.5) 

FBGA (QuadDie, 78-ball, 10.5 x 12) 

FBGA (QuadDie, 3DS, 78-ball, 10.5 x 12) 

FBGA (TwinDie, 78-ball, 9 x 11.5 x 1.2) 

FBGA (TwinDie, 78-ball, 10.5 x 12) 

FBGA (TwinDie, 3DS, 78-ball, 10.5 x 12) 

FBGA (TwinDie, 78-ball, 8 x 11.5) 

FBGA (QuadDie, 78-ball, 10 x 11.5) 

FBGA (QuadDie, 78-ball, 8 x 11.5) 

FBGA (TwinDie, 78-ball, 9.5 x 11.5) 

FBGA (60-ball, 8 x 12) 

FBGA (84-ball, 8 x 14) 

FBGA (60-ball, 8 x 10) 

FBGA (84-ball, 8 x 12.5) 

FBGA (84-ball, 10 x 12.5) 

FBGA (60-ball, 8 x 11.5) 

FBGA (84-ball, 8 x 12.5) 

FBGA (84-ball, 9 x 12.5) 

FBGA (60-ball, 84-ball, 11.5 x 14) 

FBGA (60-ball, 9 x 11.5) 


FBGA (TwinDie, 63-ball, 12 x 14) 


FBGA (TwinDie, 63-ball, 8 x 10 [1Gb, 50nm only]) 


FBGA (Quad die, 65-ball, 9 x 11.5) 

FBGA (84-ball, 60-ball, 8 x 12.5) 

FBGA (84-ball, 60-ball, 8 x 14) 

FBGA (54-ball, 60-ball, 84-ball, 10 x 12.5) 

TSOP (Type II) 

FBGA (60-ball, 8 x 16) 

VFBGA (54-ball); FBGA (84-ball, 60-ball, 8 x 14) 

VFBGA (54-ball, 8 x 8) 


TSOP (Type II) 

Stacked TSOP, “x” = internal stacking code 

PoP (216-ball, 12 x 12) 

PoP (216-ball, 12 x 12) 

PoP (168-ball, 12 x 12) 

VFBGA (54-ball, 60-ball, 8 x 9) 


VFBGA (54-ball, 60-ball, 8 x 10) 

VFBGA (60-ball, 10 x 11.5) 






VFBGA (54-ball, 10 x 11.5) 


µBGA (144-ball, 11 x 18.5) 

FBGA (144-ball, 11 x 18.5) 

FBGA (168/169-ball, 13.5 x 13.5 x 1.2) SDP 

FBGA (168/169-ball, 13.5 x 13.5 x 1.45) DDP 

Speed Grade 

Mark 

DDR SDRAM 

-75 

-6T 

-6 

-5B 

SDRAM 

-75 

-7E 

-7 

-6 

-6A 

-55 

-5 

Mobile LPDDR2 

-18 

-25 

-3 

-37 

-5 

Mobile LPDDR 

-75 

-6 

-54 

-5 

Mobile LPSDR 

-8 

-75 

-6 

RLDRAM 1 & 2 

-5 

-33 

-25 

-25E 

-18 

RLDRAM 3 

-125 

-125E 

-107 

-107E 

-093 

-093E 

2 Due to space limitations, FBGA- and µBGA-packaged components and flip chips in packages have an abbreviated part mark that is 

different from the part number. See our Web site for more information on abbreviated component marks. 3 Dimensions in millimeters. 

Note: Some device offerings are available in a VFBGA rather than an FBGA package; this is noted on the data sheet. 

26 

MAX Clock 

Frequency 

133 MHz 

167 MHz 

167 MHz 

200 MHz 

133 MHz 

133 MHz 

143 MHz 

167 MHz 

167 MHz 

183 MHz 

200 MHz 

533 MHz 

400 MHz 

333 MHz 

266 MHz 

200 MHz 

133 MHz 

167 MHz 

185 MHz 

200 MHz 

125 MHz 

133 MHz 

167 MHz 

200 MHz 

300 MHz 

400 MHz 4 

400 MHz 5 

533 MHz 

800 MHz 6 

800 MHz 7 

933 MHz 7 

933 MHz 8 

1067 MHz 7 

1067 MHz 8 

4 Available with t RC 20ns. 

5 Available with t RC 15ns. 

6 Available with t RC (MIN) 12ns. 



PC Targets 


2.5-3-3 

2.5-3-3 

2.5-3-3 

3-3-3 

3-3-3 

2-2-2 

3-3-3 

3-3-3 

3-3-3 

3-3-3 

3-3-3

MCP/PoP Memory Part Numbering 



29C = NAND + LPDRAM MCP/PoP 

NAND Density 

1G = 1Gb 

2G = 2Gb 

4G = 4Gb 

8G = 8Gb 

LPDRAM Density 

56M = 256Mb 

12M = 512Mb 

40M = 640Mb 

24M = 1Gb 

52M = 1,152Mb 

Operating Voltage Range 

A = 1.70V–1.95V 

B = 1.65V–1.9V 

C = 1.5V–1.7V 

D = 1.2V–1.5V 

F = 1.0V–1.2V 

NAND Flash Configuration 

LPDRAM Configuration 

AG = 16Gb 

BG = 32Gb 

CG = 64Gb 

DG = 128Gb 

48M = 2Gb 

72M = 3Gb 

96M = 4Gb 

92M = 8Gb 

Type Width Density Generation 

C 

D 

J 

K 

N 

P 

U 

V 

Y 

Z 

A 

C 

E 

F 

G 

H 

J 

L 

N 

P 

R 

T 

U 

V 

Y 

Z 

x8 

x16 

x8 

x16 

x8 

x16 

x8 

x16 

x8 

x16 

1Gb 

1Gb 

2Gb 

2Gb 

4Gb 

4Gb 

1Gb 

1Gb 

4Gb 

4Gb 

First 

First 

Second 

Second 

First 

First 

Second 

Second 

Second 

Second 

MT 29C 1G 12M A C A A xx - x IT ES 


AA 

AB 

AC 

AD 

AE 

AF 

AG 

AH 

x8 

x16 

x8 

x16 

x16 

x16 

x16 

x16 

2Gb 

2Gb 

1Gb 

1Gb 

8Gb 

8Gb 

4Gb 

4Gb 


DDR 

DDR 

DDR 

DDR 

DDR 

SDR 

DDR 

DDR 

DDR 

DDR 

DDR 

SDR 

SDR 

DDR 

DDR 

SDR 

x16 

x32 

x16 

x16 

x32 

x32 

x16 

x32 

x16 

x16 

x32 

x32 

x16 + x16 

x16 

x32 

x16 

512Mb 

512Mb 

256Mb 

256Mb 

256Mb 

256Mb 

1Gb 

1Gb 

512Mb 

512Mb 

512Mb 

512Mb 

512Mb + 128Mb 

512Mb 

512Mb 

256Mb 

First 

First 

First 

First 

First 

First 

First 

First 

Second 

Second 

Second 

Second 

First 

Third 

Third 

First 

Third 

Third 

Third 

Third 

Fourth 

Fourth 

Fourth 

Fourth 

AA 

AD 

AE 

AF 

AG 

AH 

AJ 

AK 

AL 

AM 

AN 

AP 

AR 

AS 

AT 

AU 

AV 

AX 

AY 

AZ 

BA 

Production Status 

Blank = Production 


QC = Daisy chain 

QS = Qualification sample 


Operating Temperature Range 

IT = Industrial Temp (–40˚C to +85˚C) 

W = Wireless (–25˚C to +85˚C) 

Special Options 

Blank = Standard 

E = On-die ECC enabled 

LPDRAM Access Time 

-5 = 200 MHz CL3 

-54 = 185 MHz CL3 

-6 = 166 MHz CL3 

-75 = 135 MHz CL3 

-8 = 125 MHz CL3 

Package Code 

Contact the factory 

Chip Count 

Type CE# Chip Count 

A 

B 

C 

D 

E 

F 

G 

H 

1, 1 

2, 1 

1, 2 

2, 2 

1, 2 

1, 2 

1, 2 

1, 3 

1 NAND, 1 LPDRAM 









DDR 

SDR 

SDR 

SDR 

SDR 

DDR 

SDR 

DDR 

SDR 

DDR 

SDR 

DDR 

SDR 

SDR 

DDR 

DDR 

SDR 

DDR 

DDR 

DDR 

DDR 

x16 

x16 + x16 

x16 

x32 

x16 + x16 

x16 

x16 

x32 

x32 

x16 

x16 

x32 

x32 

x16 (2) + x16 

x16 (2) + x32 

x32 

x32 

x32 (x2) 

x32 (x2) 

x16 

x32 

256Mb 

512Mb + 128Mb 

512Mb 

512Mb 

512Mb + 128Mb 

1Gb 

1Gb 

1Gb 

1Gb 

2Gb 

2Gb 

2Gb 

2Gb 

1Gb + 128Mb 

2Gb + 1Gb 

256Mb 

256Mb 

4Gb + 1Gb 

4Gb + 1Gb 

2Gb 

2Gb 

First 

First 

Third 

Third 

First 

Second 

First 

Second 

First 

First 

First 

First 

First 

First 

First 

First 

First 

First 

First/Second 

Third 

Third 

27

DDR3 Module Part Numbering 


Number of Memory Components 


J = 1.5V 

K = 1.35V 


TF = FBGA 

TS = DDP (dual die in package) 

TQ = QDP (quad die in package) 

SF = FBGA with temp sensor 

SS = DDP with temp sensor 

SQ = QDP with temp sensor 

BF = VLP (17.9mm) with temp sensor (very low profile) 

BS = VLP (17.9mm) DDP with temp sensor 

BQ = VLP (17.9mm) QDP with temp sensor 

DF = VLP (18.75mm) with temp sensor 

DS = VLP (18.75mm) DDP with temp sensor 

DQ = VLP (18.75mm) QDP with temp sensor 

SZF = FBGA with temp sensor and heat spreader 

SZS = DDP with temp sensor and heat spreader 

SZQ = QDP with temp sensor and heat spreader 

BZF = VLP (17.9mm) with temp sensor and heat spreader 

BZS = VLP (17.9mm) DDP with temp sensor and heat spreader 

BZQ = VLP (17.9mm) QDP with temp sensor and heat spreader 

CZS = VLP (19.5mm) DDP with temp sensor and heat spreader 

CZQ = VLP (19.5mm) QDP with temp sensor and heat spreader 

DYS = VLP (18.75mm) with temp sensor and alternate heat spreader 

DZF = VLP (18.75mm) with temp sensor and heat spreader 

DZS = VLP (18.75mm) DDP with temp sensor and heat spreader 

DZQ = VLP (18.75mm) QDP with temp sensor and heat spreader 


Blank = Megabits 

G = Gigabits 

Module Version 

Blank = 240-pin Registered DIMM 

A = 240-pin Unbuffered DIMM 

AK = 244-pin Unbuffered miniDIMM 

H = 204-pin SODIMM 

L = 240-pin LRDIMM 

LS = 240-pin 3DS LRDIMM 

P = 240-pin Parity RDIMM 

PK = 244-pin Parity miniDIMM 

28 

MT 8 J TF 256 64 A Z - 1G4 A 1 

Module Speed Grade 

-80B 

-80C 

-1G0 

-1G1 

-1G2 

-1G3 

-1G4 

-1S4 

-1G5 

-1GA 9 

-1G6 

-1S6 

-1G7 

-1G8 

-1G9 

-1GB 

-1GC 

-2G1 

-2G2 

-2G3 

Pb-Free 

Devices 

Y 

Z 

IZ 

DY 

DZ 

Component Speed Grade/ 

Part Mark 

-25 

-25E 

-187 

-187E 

-187F 

-15 

-15E 

-15H 

-15F 

-125 

-125 

-125H 

-125E 

-125F 

-107 

-107E 

-107F 

-093 

-093E 

-093F 

Package 

Descriptions 

JEDEC Component 

Speed Grade 

DDR3-800 

DDR3-800 

DDR3-1066 

DDR3-1066 

DDR3-1066 

DDR3-1333 

DDR3-1333 

DDR3-1333 

DDR3-1333 

DDR3-1333 

DDR3-1600 

DDR3-1600 

DDR3-1600 

DDR3-1600 

DDR3-1866 

DDR3-1866 

DDR3-1866 

DDR3-2133 

DDR3-2133 

DDR3-2133 

Clock Frequency (MHz) 

400 

400 

533 

533 

533 

667 

667 

667 

667 

667 

800 

800 

800 

800 

933 

933 

933 

1067 

1067 

1067 

Printed Circuit Board 

Revision Designator 

Data Rate (MT/s) 

800 

800 

1066 

1066 

1066 

1333 

1333 

1333 

1333 

1333 

1600 

1600 

1600 

1600 

1866 

1866 

1866 

2133 

2133 

2133 

Die Revision 

Module Speed 

Module Bandwidth 

PC3-6400 

PC3-6400 

PC3-8500 

PC3-8500 

PC3-8500 

PC3-10600 

PC3-10600 

PC3-10600 

PC3-10600 

PC3-10600 

PC3-12800 

PC3-12800 

PC3-12800 

PC3-12800 

PC3-14900 

PC3-14900 

PC3-14900 

PC3-17000 

PC3-17000 

PC3-17000 

9 -G1A = -1333 SPD with -125 tested DRAM 

SPD = serial presence-detect pin (module only) 

CL = CAS latency; t RCD = active-to-command time; t RP = precharge time 

Package Codes 

Commercial temp; single- or dual-rank DIMM 

Halogen Free; commercial temp; single- or dual-rank DIMM 

Industrial temp, halogen-free; commercial temp; 

single- or dual-rank DIMM 

Commercial temp; select dual- or quad-rank DIMM 

Halogen Free; commercial temp; select dual- or quad-rank DIMM 

Module Configuration SPD 

(CL-tRCD-tRP) 6-6-6 

5-5-5 

8-8-8 

7-7-7 

6-6-6 

10-10-10 

9-9-9 

10-9-9 

8-8-8 

11-11-11 

11-11-11 

12-11-11 

10-10-10 

9-9-9 

13-13-13 

12-12-12 

11-11-11 

14-14-14 

13-13-13 

12-12-12

DDR2 Module Part Numbering 




H = 1.8V 

G = 1.5V 

R = 1.55V 


TF = FBGA 

TS = DDP (dual die in package) 

TZS = DDP with heat spreader 

VF = VLP (very low profile) 

VS = VLP DDP 

VZS = VLP DDP with heat spreader 

VQ = VLP QDP (quad die in package) 



G = Gigabits 

Module Version 

Blank = 240-pin Registered DIMM 

A = 240-pin Unbuffered DIMM 

CH = 200-pin SOCDIMM 

F = 240-pin Fully-buffered DIMM 

H = 200-pin SODIMM 

P = Parity 

PK = 244-pin Parity Mini-RDIMM 

RH = 200-pin SORDIMM 

MT 18 H TF 512 72 P Z - 667 C 1 


-40E 

-53E 

-667 

-80E 

-800 

-1GA 


Part Mark 

-5E 

-37E 

-3 

-25E 

-25 

-187E 

AMB Vendor Rev (FBDIMM only) 


Speed Grade 

DDR2-400 

DDR2-533 

DDR2-667 

DDR2-800 

DDR2-800 

DDR2-1066 


200 

267 

333 

400 

400 

533 


400 

533 

667 

800 

800 

1066 

Die Revision 

Module Speed 


PC2-3200 

PC2-4200 

PC2-5300 

PC2-6400 

PC2-6400 

PC2-8500 


(CL-tRCD-tRP) 3-3-3 

4-4-4 

5-5-5 

5-5-5 

6-6-6 

7-7-7 



Pb-Free 

Devices 

Y 

Z 

DY 

DZ 

IY 

TY 

IZ 

TZ 

Package 

Descriptions 

AMB Vendor 

E = Intel (FBDIMM) 

D = IDT (FBDIMM) 

N = NEC (FBDIMM) 



Package Codes 


Halogen-free; commercial temp; single- or 

dual-rank DIMM 

Commercial temp; select dual-rank DIMM 

Halogen-free; commercial temp; select dual- 

or quad-rank DIMM 

Industrial temp; select dual-rank DIMM 

Industrial temp; select dual-rank DIMM 

Halogen-free; industrial temp; select single- 

and dual-rank DIMM 

Halogen-free; industrial temp; select dual- 

and quad-rank DIMM 

29

SDRAM and DDR Module Part Numbering 




L = 3.3V (SDRAM) 

V = 2.5V (DDR SDRAM) 


DDF = FBGA (DDR SDRAM) 

DDT = TSOP (DDR SDRAM) 

DVF = FBGA VLP (DDR SDRAM) 

SDF = FBGA (SDRAM) 

SDT = TSOP (SDRAM) 



G = Gigabits 

Module Version 10 

Blank = 168-pin/184-pin/240-pin Registered DIMM 

A = 168-pin/184-pin/240-pin Unbuffered DIMM 

H = 144-pin/200-pin SODIMM 

LA = Low-voltage, 168-pin/184-pin Unbuffered DIMM 

LH = Low-voltage, 144-pin SODIMM 

PH = 144-pin/200-pin Unbuffered SODIMM with PLLs 

U = 100-pin Unbuffered DIMM 

10 All SDRAM and DDR SDRAM DIMMs have serial-presence detect. 

SDRAM Modules 

Module 

Speed 

-133 

-13E 

Allowable 

Component Speed 

-75, -7E 

-7E 

DDR SDRAM Modules 

Module 

Speed 

-335 

-40B 

30 

Allowable 

Component Speed 

-6, -6T, -5B 

-5B 


3-3-3 

2-2-2 

MT 16 V DDF 128 64 H G - 40B D 2 


-335 

-335 

-40B 


Part Mark 

-6T 

-6 

-5B 


Speed Grade 

DDR333 TSOP 

DDR333 FBGA 

DDR400 12 

Die Revision Designator 


167 

167 

200 


333 

333 

400 

Module Speed 


PC2700 

PC2700 

PC3200 


(CL-tRCD-tRP) 2.5-3-3 

2.5-3-3 11 

3-3-3 



11 Data valid window is 150ps greater than -6T. 

12 DDR400 nominal voltage is 2.6V. 

Lead-Plated 

Devices 

G 

DG 

I 

T 

Pb-Free 

Devices 

Y 

DY 

IY 

TY 

Package 

Descriptions 



Package Codes 


Commercial temp; select dual-rank DIMM 

Industrial temp DIMM 

Industrial temp; select dual-rank DIMM

PSRAM/CellularRAM ® Memory Part Numbering 



45 = PSRAM/CellularRAM ® Memory 

Operating Core Voltage 

W = 1.70V–1.95V 

V = 2.70V–3.60V 

Address Locations 

M = Megabits 

K = Kilobits 

I/O Voltage 

W = 1.75V–3.60V 

V = 2.70V–3.60V 

Bus Configuration 

16 = x16 

Read/Write Mode Operation 

P = Asynchronous/Page 

B = Asynchronous/Page/Burst 

DB = AAD MUX 

MB = MUX Burst 

MP = Asynchronous MUX 

Die Rev Code 

Blank = P25A, P26Z, and P24Z Design 

A = P24A Design 

C = P25Z Design 

D = P23Z Design 

E = P22Z Design 

MT 45 W 1M W 16 P A FA - 70 1 WT ES 






WT = –30˚C to +85˚C 

IT = –40˚C to +85˚C 

AT = –40˚C to +105˚C 

Options 

Blank = Standard device 

L = Low power 

Frequency 

Blank = No burst mode 

8 = 80 MHz 

1 = 104 MHz 

13 = 133 MHz 

Access/Cycle Time 

55 = 55ns 

70 = 70ns 

85 = 85ns 

Package Code 

FA = 48-ball VFBGA (6 x 8 grid, 0.75mm pitch, 6 x 8 x 1mm) 

FB = 54-ball VFBGA (6 x 9 grid, 0.75mm pitch, 6 x 8 x 1mm) 

BA = 48-ball VFBGA (Pb-free 13 ; 6 x 8 grid, 0.75mm pitch, 6 x 8 x 1mm) 

BB = 54-ball VFBGA (Pb-free 13 ; 6 x 9 grid, 0.75mm pitch, 6 x 8 x 1mm) 

GX = 54-ball VFBGA (Green; 6 x 9 grid, 0.75mm pitch, 8 x 10 x 1mm) 

GA = 48-ball VFBGA (Green; 6 x 8 grid, 0.75mm pitch, 6 x 8 x 1mm) 

GB = 54-ball VFBGA (Green; 6 x 9 grid, 0.75mm pitch, 6 x 8 x 1mm) 

13 Lead is not intentionally added by Micron during the manufacturing process, 

but it can be present in trace amounts in the raw materials used to manufacture 

the finished products. 

31

NAND Flash Part Numbering 



29F = NAND Flash 

29E = Enterprise NAND Flash 

29FCA = ClearNAND Flash 

29EC = Enhanced ClearNAND Flash 

29SC = Standard ClearNAND Flash 

Density 

1G = 1Gb 

2G = 2Gb 

4G = 4Gb 

8G = 8Gb 

16G = 16Gb 

Device Width 

01 = 1 bit 

08 = 8 bits 

16 = 16 bits 

Level 

Classification 


A = 3.3V (2.70V–3.60V) 

B = 1.8V (1.70V–1.95V) 

C = 3.3V (2.70V–3.60V), VCCQ 1.8V (1.70V–1.95V) 

D = 1.8V (1.65V–3.6V) SIM 

32 

Mark Level 

A 

B 

C 

E 

32G = 32Gb 

64G = 64Gb 

128G = 128Gb 

256G = 256Gb 

512G = 512Gb 

Mark Die nCE RnB I/O Channels 

A 

B 

C 

D 

E 

F 

H 

G 

J 

K 

L 

M 

N 

P 

Q 

R 

T 

U 

V 

W 

Y 

SLC 

Reserved 

MLC 

TLC 

1 

1 

2 

2 

2 

2 

- 

4 

4 

4 

4 

4 

4+4 

8 

8 

8 

8 

8 

- 

- 

- 

0 

1 

0 

1 

2 

2 

- 

1 

2 

2 

4 

4 

2+2 

1 

2 

2 

4 

4 

- 

- 

- 

0 

1 

0 

1 

2 

2 

- 

1 

2 

2 

4 

4 

2+2 

1 

2 

2 

4 

4 

- 

- 

- 

1 

1 

1 

1 

2 

1 

- 

1 

1 

2 

1 

2 

1 

1 

1 

2 

1 

2 

- 

- 

- 

MT 29F 2G 08 A A A A A WP - xx xx x ES: A 

Design Revision (Shrink) 

A = 1st design revision 




QS = Qualification sample 


Reserved for Future Use 


Blank = Commercial (0˚C to +70˚C) 

IT = Extended (–40˚C to +85˚C) (AKA ET) 

WT = Wireless Temp (–25˚C to +85˚C) 

Speed Grade (Synchronous) 

Blank = No speed grade defined 

20 = 100 MT/s 

15 = 133 MT/s 

12 = 166 MT/s 

10 = 200 MT/s 

Package Code 

WP = 48-pin TSOP I (Pb-free14 ; CPL version) 

WC = 48-pin TSOP I (Pb-free14 ; OCPL version) 

J1 = 132-ball VBGA (Pb-free14 ), 12 x 18 x 1.0 

J2 = 132-ball TBGA (Pb-free14 ), 12 x 18 x 1.2 

J3 = 132-ball LBGA (Pb-free14 ), 12 x 18 x 1.4 

H1 = 100-ball VFBGA (Pb-free14 ), 12 x 18 x 1.0 

H2 = 100-ball TBGA (Pb-free14 ), 12 x 18 x 1.2 

H3 = 100-ball LBGA (Pb-free14 ; DDP/QDP/8DP), 12 x 18 x 1.4 

H4 = 63-ball VFBGA, (Pb-free14 ) 9 x 11 x 1.0 

HC = 63-ball VFBGA, (Pb-free14 ) 10.5 x 13 x 1.0 

C3 = 52-pad ULGA, (Pb-free14 ) 12 x 17 x 0.65 

C4 = 52-pad VLGA, 12 x 17 x 1.0 (Pb-free14 ; SDP/DDP/QDP) 

C5 = 52-pad VLGA, 14 x 18 x 1.0 (Pb-free14 ; SDP/DDP/QDP) 

C6 = 52-pad LLGA, 14 x 18 x 1.47 (Pb-free14 ; 8DP/DDP/QDP) 

C7 = 48-pad LLGA, 12 x 20 x 1.47 (Pb-free14 ; 8DP) 

C8 = 52-pad WLGA, 14 x 18 x 0.75 (Pb-free14 ; DDP/QDP) 

DQ = 100-ball LBGA, 14 x 18 x 1.4 (Pb-free14 ) 

14 Lead is not intentionally added by Micron during the manufacturing 

process, but it can be present in trace amounts in the raw materials 

used to manufacture the finished products. 

Interface 

Mark Interface 

A 

B 

D 

Async only 

Sync/Async 

SPI 

Generation Feature Set 

A = 1st set of device features 

B = 2nd set of device features (rev only if different from 1st set) 

C = 3rd set of device features (rev only if different) 

D = 4th set of device features (rev only if different) 

Etc.

NAND Small Page (SP) Flash Memory Part Numbering 

Density 

128 = 128Mb 

256 = 256Mb 

512 = 512Mb 


R = 1.8V 

W = 3.0V 

Configuration 

3 = x8 

4 = x16 

NAND Product Family Identifier 

A = 512B Page NAND SLC 

Device Options 

0 = No options (CE care; sequential raw read enabled) 

2 = CE don’t care 

A = CE don’t care; automotive 

NAND 512 R 3 A 2 A ZA 6 E 

Packaging 

E = ECOPACK package, standard tray packaging 

F = ECOPACK package, tape and reel packaging 


6 = –40˚C to +85˚C 

Package Code 

N = 48-pin TSOP 

ZA/ZD = 55-, 63-ball VFBGA 

E0 = Bare Die 

DI = Known good die 

Product Version 

A, B, C, D 

33

N25Q Serial NOR Flash Memory Part Numbering 

SPI NOR Family Identifier 

N25Q = Multi-I/O SPI NOR Flash 

Density 

008 = 8Mb 

016 = 16Mb 

032 = 32Mb 

064 = 64Mb 

Litho 

A = 65nm 

Feature Set 

1 = Byte addressability, hold pin, Micron XiP 

2 = Byte addressability, hold pin, basic XiP 

3 = Byte addressability, reset pin, Micron XiP 

4 = Byte addressability, reset pin, basic XiP 


1 = 1.7V–2.0V VCC 

3 = 2.7V–3.6V VCC 

Array Configuration 

T = Top 

B = Bottom 

E = Uniform 

G = Easy transparent stack 

34 

128 = 128Mb 

256 = 256Mb 

512 = 512Mb 

00A = 1Gb 

N25Q 128 A 1 3 E 12 4 0 G 

Packaging 

E = Tray 

F = Tape and reel 

G = Tube 

Security 

0, 1, 2, 3, 4, 5, 6 

Contact Micron Sales for more information. 


4 = Industrial tested with Standard test flow (–40˚C to +85˚C) 

A = Automotive tested with High-Reliability Certified test flow 

(–40˚C to +125˚C) 

H = Industrial tested with High-Reliability Certified test flow 

(–40˚C to +85˚C) 

Package Code 

F3 = DFN/3 x 2 (MLP) 

F4 = DFN/3 x 4 (MLP) 

F6 = DFN/6 x 5 (MLP) 

F7 = DFN/6 x 5 (MLP), sawn 

F8 = DFN/8 x 6 (MLP) 

SC = SOP2-8/ 150 mil (SO8N) 

SE = SOP2-8/ 208 mil (SO8W) 

SF = SOP2-16/ 300 mil (SO16W) 

12 = T-PBGA-24b05/6 x 8 (TBGA 24) 

51 = XF-SCSP (CSP)

M25/M45 Serial NOR Flash Memory Part Numbering 

SPI NOR Family Identifier 

M25P = Data storage family 

512K/1Mb – Uniform block erase 32KB 

2Mb to 64Mb – Uniform block erase 64KB 

128Mb – Uniform block erase 256KB 

M25PE = Page erase family 

Uniform block erase 256 byte + 4KB + 64KB 

M45PE = Page erase family 

Uniform block erase 256 byte + 64KB 

M25PX = Dual I/O family 

Uniform block erase 4KB + 64KB 

Density 

05 = 512Kb 

10 = 1Mb 

20 = 2Mb 

40 = 4Mb 

80 = 8Mb 

16 = 16Mb 

32 = 32Mb 

64 = 64Mb 

128 = 128Mb 

Security 

Blank = No security 

S = UID preprogrammed 

SO = UID + Permanent block lock 

ST = UID + Permanent block lock + Reverse power-up block lock status 


V = 2.7–3.6V VCC 

2.3–3.6V VCC (M25P available in 512Kb – 4Mb; 

M25PX available in 8Mb – 16Mb) 

M25P 10 x V MN 6 T P 

RoHS 

P = RoHS compliant 

G = RoHS compliant 

Packaging 

Blank = SO Tube (MLP and BGA tray) 

T = Tape and reel 


6 = –40˚C to +85˚C 

3 = Automotive: –40˚C to +125˚C 

Package Code 

BA = PDIP8, 300 mils 

MB = DFN, 3 x 2 (MLP) 

MC = DFN, 3 x 4 (MLP) 

ME = DFN, 8 x 6 (MLP) 

MF = SOP2-16, 300 mils (SO16W) 

MN = SOP2-8, 150 mils (SO8N) 

MP = DFN, 6 x 5, (MLP) 

MS = DFN, 6 x 5, sawn (MLP) 

MW = SOP2-8, 208 mils (SO8W) 

ZM = T-PBGA-24b05, 6 x 8 (TBGA 24) 

35

M29W Parallel NOR Flash Memory Part Numbering 

NOR Family Identifier 

M29 = Standard Parallel NOR 


W = 2.7–3.6V VCC 

Density 

400 = 4Mb 

800 = 8Mb 

160 = 16Mb 

320 = 32Mb 

640 = 64Mb 

128 = 128Mb 

256 = 256Mb 

Silicon Version or Architecture Option 

D, E, F, G 

Functionality/Security 

H = Uniform block (highest block protected) 

L = Uniform block (lowest block protected) 

B = Bottom boot (bottom blocks protected) 

T = Top boot (top blocks protected) 

M29 W 320 E T 70 N 6 E 

Packaging 




3 = –40˚C to +125˚C (automotive) 

6 = –40˚C to +85˚C 

Package Code 

N/NB = 56-pin TSOP, 14 x 20mm 

N/NA = 48-pin TSOP, 12 x 20mm 

ZA = 48-ball TBGA, 6 x 8mm, 0.8mm pitch (4Mb – 64Mb) 

64-ball TBGA, 10 x 13mm, 1mm pitch (128Mb/256Mb) 

ZS = 64-ball FBGA, 11 x 13mm, 1mm pitch 

ZF = 64-ball TBGA, 10 x 13mm, 1mm pitch 

ZE = 48-ball TFBGA, 6 x 8mm, 0.8mm pitch 

Speed 

45 = 45ns 

5A = 55ns (automotive, temp range “6”) 

55 = 55ns 


60 = 60ns 


70 = 70ns 

M29AW Uniform Block MLC Flash Memory Part Numbering 

Package Code 

JS = 56-pin TSOP, 14 x 20mm, RoHS 

PC = 64-ball FBGA, 11x13mm, RoHS 

Product Line Designator 

28F = NOR parallel interface 

Density 

512 = 512Mb 

00A = 1Gb 

36 

JS 28F 512 M29AW H x 

Device Features 

(Optional) Assigned to cover packing media 

and/or features or other specific configurations. 

Packaging 

B = Tape and reel 


H = Uniform block (highest block protected by VPP/WP#) 

L = Uniform block (lowest block protected by VPP/WP#) 

Parallel NOR Family Identifier 

M29AW = Parallel Flash memory, uniform block, 3V core

M29DW Parallel NOR Flash Memory Part Numbering 


M29 = Standard Parallel NOR 


DW = 2.7–3.6V VCC, multi bank 

Density 

323 = 32Mb, x8/x16 

127 = 128Mb, x8/x16 

128 = 128Mb, x16 

256 = 256Mb, x16 

Silicon Version or Architecture Option 

D, E, F, G 






M29 DW 323 D T 70 N 6 E 

Packaging 





6 = –40˚C to +85˚C 

Package Code 

NF = 56-pin TSOP 


ZA = 64-ball TBGA 

ZE = 48-ball TFBGA 

Speed 


60 = 60ns 


70 = 70ns 

37

M29EW Parallel NOR Flash Memory Part Numbering 

Package Code 

JR = 48-pin TSOP, RoHS, HF 

JS = 56-pin TSOP, RoHS, HF 

PC = Fortified 64-ball BGA, RoHS, HF 

PZ = 48-pin BGA (RoHS, HF) 

RC = Fortified 64-ball BGA 



Density 

032 = 32Mb, x8/x16 

064 = 64Mb, x8/x16 

128 = 128Mb, x8/x16 

256 = 256Mb, x8/x16 

M29F Single-Bank 5V Flash Memory Part Numbering 


M29F = Parallel NOR, single bank, top/bottom boot block, 

5V supply voltage 

Density 

200 = 16Mb 

400 = 32Mb 

800 = 64Mb 

160 = 128Mb 

Litho 

F = 110nm 




38 

512 = 512Mb, x8/x16 

00A = 1Gb, x8/x16 

00B = 2Gb (1Gb/1Gb), x8/x16 

PC 28F 256 M29EW x H x 

M29F 160 F T 55 M 6 







B = Bottom boot (bottom two blocks protected) 

T = Top boot (top two blocks protected) 

Lithography 

Blank = 65nm 


M29EW = Parallel Flash memory, 3V core, 1.8–3.6V I/O 

Packaging 

Blank = Standard tray packaging 

E = Standard tray packaging, RoHS 

F = Tape and reel packaging, RoHS, 24mm 

T = Tape and reel packaging, 24mm 



6 = –40˚C to +85˚C 

Package Code 

M = SO44, 0.525in cu 

N = 48-pin TSOP-1, 12 x 20mm, AL 4 

ZA = 48-ball TBGA, 6 x 8mm, 0.8mm pitch 

(only 8Mb, bottom boot) 

Speed 

55 = 55ns (temp range “3”: –40˚C to 85˚C) 

5A = 55ns (temp range “6”: –40˚C to 85˚C)

P30/P33 Parallel NOR Flash Memory Part Numbering 

Package Code 

JS = 56-pin TSOP, RoHS 

PC = 64-ball Easy BGA, RoHS 

RC = 64-ball Easy BGA 



Density 

640 = 64Mb, x16 

128 = 128Mb, x16 

256 = 256Mb, x16 


P = P30/P33 Parallel NOR 


30 = 1.7–2.0V, 2.3–3.6V 

33 = 2.7–3.6V 

P30/P33 Stacked 

Package Code 


PF = 88-ball Quad+ BGA, RoHS 


RD = 88-ball Quad+ BGA 

Density 

3000 = 128Mb, x16 

4000 = 256Mb, x16 

4400 = 512Mb (256Mb/256Mb), x16 


P0 = P30/P33 Parallel NOR 

512 = 512Mb, x16 

00A = 1Gb, x16 

00B = 2Gb (1Gb/1Gb), x16 


48F = NOR parallel interface for stacked configurations 


Z = Individual chip enable(s), 1.7–2.0V VCC, 1.7–3.6V VCCQ 

V = Virtual chip enable(s), 1.7–2.0V VCC, 1.7–3.6V VCCQ 

X = Individual chip enable(s), 2.3–3.6V VCC, 2.3–3.6V VCCQ 

T = Virtual chip enable(s), 2.3–3.6V VCC, 2.3–3.6V VCCQ 

PC 28F 128 P 33 T F 60 x 

PC 48F 3000 P0 Z T Q E x 




Speed 

60 = 60ns 

65 = 65ns 

70 = 70ns 

75 = 75ns 

85 = 85ns 

95 = 95ns 

Blank = Various speeds 

Lithography 

F = 65nm 

Functionality 

B = Bottom boot 

T = Top boot 




Speed 

60 = 60ns 

65 = 65ns 

70 = 70ns 

75 = 75ns 

85 = 85ns 

95 = 95ns 

Blank = Various speeds 

Ballout Designator 

Q = Quad+ 

0 = Discrete 

Functionality 

B = Bottom boot, top/bottom boot 

T = Top boot 

39

G18 Parallel NOR Flash Memory Part Numbering 

Package Code 




Density 

128 = 128Mb, x8/x16 

256 = 256Mb, x8/x16 

512 = 512Mb, x8/x16 

00A = 1Gb, x8/x16 

PC 28F 512 G 18 F F 

J3 Parallel NOR Flash Memory Part Numbering 

Package Code 

JS = 56-pin TSOP, RoHS 



TE = 56-pin TSOP 



Density 

320 = 32Mb, x8/x16 

640 = 64Mb, x8/x16 

128 = 128Mb, x8/x16 

256 = 256Mb, x8/x16 

40 

PC 28F 320 J 3 F 75 

Packaging 

E = Standard tray packaging 

F = Tape and reel packaging 

Interface 

F = Non-MUX 

A = A/D MUX 


18 = 1.7–2.0V Core and I/O 


G = StrataFlash embedded memory 

Speed 

75 = 75ns 

95 = 95ns 

105 = 105ns 

Lithography 

F = 65nm with High-Reliability Certified test flow 

D = 130nm 


3 = 3V VCC, 3V VPEN 


J = J3 Parallel NOR

M28W Parallel NOR Flash Memory Part Numbering 


M28 = Parallel NOR 


W = 2.7–3.6V VDD, 1.65–3.6V VDDQ 

Density/Functionality 

160C = 16Mb, x16, boot block 

320FC = 32Mb, x16, boot block 

640HC = 64Mb, x16, boot block 

Functionality 


T = Top boot 

M28 W 160C T 70 N 6 T 

M58BW Parallel NOR Flash Memory Part Numbering 



Flash Identifier 

B = Burst mode 


W = 2.7–3.6V VDD range for 45ns speed class 

2.5–3.3V VDD range for 55ns speed class 

2.4V–VDD VDDQ range for 45ns and 55ns speed classes 


16F = 16Mb, x32, boot block, burst, 0.11µm process 

32F = 32Mb, x32, boot block, burst, 0.11µm process 

Functionality 


T = Top boot 

M58 B W 32F T 4 T 3 T 

Packaging 

Blank = Standard tray packaging 



U = ECOPACK package, tray packaging 


6 = –40˚C to +85˚C 

Package Code 


ZB = 46-ball TFBGA 

Speed 

70 = 70ns 

Packaging 


T = Standard tray packaging 



Package Code 

T = 80-pin PQFP 

ZA = 80-ball LBGA 

Speed 

4 = 45ns 

5 = 55ns 

41

M58WR Parallel NOR Flash Memory Part Numbering 



Flash Identifier 

W = Multiple bank, burst mode 


R = 1.7–2.0V VDD 


016 = 16Mb, x16 

032 = 32Mb, x16 

064 = 64Mb, x16 

M58 W R 016 K T 7A ZB 6 E 

Packaging 

E = Standard tray packaging 

F = Tape and reel packaging 


6 = –40˚C to +85˚C 

Package Code 

ZB = 56-ball VFBGA 

Automotive Temp Range 

7A = Automotive-grade certified –40˚C to +85˚C 

Technology 

K = 65nm process Functionality 


T = Top boot 

42

Solid State Drive Part Numbering 


Flash Drive (SSD) 

Drive Interface 

A = SATA 1.5 Gb/s 

B = SATA 3.0 Gb/s 

C = USB 2.0 

D = SATA 6.0 Gb/s 

G = PCIe Gen 2 

Drive Form Factor 

AA = 1.8-inch HDD replacement, 5mm, 

Micro SATA connector 

AC = 2.5-inch HDD replacement, 9.5mm 

AE = Embedded USB, 36.9mm x 26.6mm x 9.6mm 

AG = Full height, full length x8 

AH = Full height, half length x8 

AK = 2.5 inch, 7mm 

Drive Density 

001 = 1GB 

002 = 2GB 

004 = 4GB 

008 = 8GB 

014 = 14GB 

016 = 16GB 

025 = 25GB 

030 = 30GB 

050 = 50GB 

056 = 56GB 

NAND Type 

S = SLC 

M = MLC 

060 = 60GB 

064 = 64GB 

120 = 120GB 

128 = 128GB 

175 = 175GB 

200 = 200GB 

256 = 256GB 

350 = 350GB 

512 = 512GB 

700 = 700GB 

MT FD D AC 128 M x x - 1 G 1 xx xx ES 



ES = Engineering Sample 

MS = Mechanical Sample 


Blank = Commercial (0˚C to +70˚C) 

IT = Industrial Temp (–40˚C to +85˚C) 

Hardware Feature Set 

Blank = Blank 

AA = Contact the factory 

AB = Contact the factory 

AC = Contact the factory 

BOM Revision 

1 = 1st Generation 

2 = 2nd Generation 

3 = 3rd Generation 

4 = 4th Generation 

Etc. 

NAND Component 

A = 4Gb, SLC, x8, 3.3V, 72nm 

B = 8Gb, SLC, x8, 3.3V, 50nm 

C = 16Gb, MLC, x8, 3.3V, 50nm 

D = 4Gb, SLC, x8, 3.3V, 50nm 

E = 16Gb, MLC, x8, 3.3V, 34nm 

F = 32Gb, MLC, x8, 3.3V, 34nm 

G = 32Gb, MLC, x8, 3.3V, 34nm 

H = 8Gb, SLC, x8, 3.3V, 50nm 

J = 32Gb, MLC, x8, 3.3V, 25nm 

K = 64Gb, MLC, x8, 3.3V, 25nm 

L = 4Gb, SLC, x8, 3.3V, 34nm 

M = 8Gb, SLC, x8, 3.3V, 34nm 

N = 16Gb, SLC, x8, 3.3V, 34nm 

Sector Size 

1 = 512 byte 


AE = C200/P200 

AG = C300 

AH = P320 

AJ = e230 

AL = P300 

AM = C400 

43

® 

Micron 

Product Longevity Program (PLP) 

Stable Memory Support for Long Design Cycles 

in the Automotive, Industrial, and Medical Segments 


DRAM PLP Products 

MT41 DDR3 1–2Gb AIT, AAT 

MT47 DDR2 1–2Gb AIT, AAT 

MT46 DDR 256–512Mb AIT, AAT 

MT48 SDRAM 128–256Mb AIT, AAT 

Parallel NOR Flash PLP Products 

M29EW Parallel NOR Flash 64Mb–1Gb IT 

M29W Parallel NOR Flash 8–256Mb IT 

P30 Parallel NOR Flash 64Mb–1Gb IT 

P33 Parallel NOR Flash 64Mb–1Gb IT 

J3 Parallel NOR Flash 64–256Mb IT 

SPI NOR Flash PLP Products 

N25Q Serial NOR Flash 32–128Mb IT 

M25PE/M45PE Serial NOR Flash 4–16Mb IT, AT 

M25P Serial NOR Flash 4–16Mb IT, AT 

NAND Flash PLP Products 

MT29 SLC, LP NAND Flash 1–4Gb IT 

MT29 SLC, SPI NAND Flash 1–4Gb IT 

NAND SLC, Small Page (SP) 

NAND Flash 

PLP 

Participant 

Density 

Temp 

Range 

128–512Mb IT 

Notes: The partial part numbers referenced above are product family designators only; please 

contact your sales representative to verify which specific full part numbers are included in the PLP. 

Micron’s Product Longevity Program (PLP) provides 

continuous, stable memory products for long-life 

applications in the automotive, industrial, and 

medical segments. Through the PLP, we will make 

a targeted range of DRAM, NAND, and NOR 

memory devices available for a minimum period of 

10 years to support our customers’ long design and 

lifecycle requirements. 

Program Details 

The 10-year lifecycles for Micron PLP products will 

begin when the product is introduced into the PLP. 

If it becomes necessary to transition a device to a 

new silicon process node or transfer production of 

a PLP product to an alternate manufacturing facility, 

Micron will requalify the product. 

PLP-eligible products have extended notification 

and conversion timelines. Participating customers 

will be given 12 months from notification to place 

last-time orders and an additional 12 months to 

receive last-time shipments. This notifcation period 

is double the standard notification period, allowing 

customers two years to convert to newer products. 

Visit micron.com/plp for more 

information about the program.

Web Tools 

One-Stop Part Catalogs 

Please visit micron.com where you’ll find all of our detailed product-specification data, including part status, 

recommended parts (where applicable), disty stock and sample information, data sheets, and modeling tools. 

You also can find information about our plans for long-term product support, design Webinars, and product FAQs. 

Innovations Blog 

micronblogs.com 

Join the conversation at Micron’s Innovations blog, where we highlight our recent technology developments— 

from advanced storage solutions to the cutting edge of server, computing, and mobile memory. 

Designer’s Toolbox 

micron.com/support 

• Chipset suppliers 

• Standards and specs 

• Support components 

• Models and design notes 

• Presentations 

Micron System Power Calculator 

micron.com/powercalc 

Simulation Models 

Simulation models can be found online with our data sheets. 

Models can cut test times by months and can be downloaded for device comparison analysis. 

Models currently available: 

• Verilog 

• HSpice 

• Mentor Hyperlynx (modules only) 

• IBIS 

• Cadence DML (modules only)

Contact Information 

Please visit micron.com/purchase for a search tool to locate our sales offices, 

representatives, and distributors. 

U.S.A. (see Web for additional offices) 

Micron Semiconductor Products, Inc. 

8000 S. Federal Way, P.O. Box 6 

Boise, Idaho 83707-0006 U.S.A. 

Tel: 208-368-3900 

Fax: 208-368-4617 

Web: www.micron.com 

E-mail: prodmktg@micron.com 

Customer Comment Line: 800-932-4992 

Customer Comment Fax Line: 01-208-368-5018 


3060 North 1st Street 

San Jose, California 95134-5134 U.S.A. 

Tel: 408-855-4000 

Fax: 408-834-1129 

Europe 

Micron Semiconductor France, SAS 

Miniparc Du Verger 

Z.A Courtaboeuf 1 - Batiment G 

1 Rue de Terre Neuve 

91967 Les Ulis Cedex 

France 

Tel: 33-1-70-91-29-50 

Fax: 33-1-70-91-29-88 

Micron Semiconductor (Deutschland) GmbH 

Carl-Zeiss-Ring 21 

D-85737 Ismaning, Germany 

Tel: 49-89-904-87211 

Fax: 49-89-904-87250 

Micron Europe Limited 

Erd, Hungary 

Tel: 36 (30) 4904190 

Micron Europe Limited 

Lyndon House 

Crossafehin 

Virginia, County Cavan, Ireland 

Tel: 353 49 854 8220 

Fax: 353 49 854 8240 

Micron Technology Italia, Srl 

Societa’ Unipersonale 

Via C. Olivetti, 2 

Agrate Brianza, MB Italy 20864 

Tel: 39-039-603-7666 

Micron Technology Italia, Srl 

Via Antonio Pacinotti 5/7 

Nucleo Industriale (AQ), Bldg. 2 

Avezzano, Italy 67051 

Tel: 39-0863-4231 

Fax: 39-0863-423283 

MTI Semiconductor Sweden AB 

16440 Kista 12th Floor 

Farogatan St 

Sweden 164 40 

Tel: 46-8-555-27-440 

Fax: 46-8-555-27-441 

Micron Europe Ltd (United Kingdom) 

L’Avenir 

Opladen Way 

Bracknell 

Berkshire RG12 OPH 

Tel: 01344 383400 

Fax: 01344 383401

Asia 

Micron Semiconductor (Shanghai) Co., Ltd. 

Shenzhen Branch 

10F, Tower B, Anlian Plaza 

No.4018, Jintian Road 

Futian District, Shenzhen Guangdong Province 518026 

P.R. China 

Tel: 86-755-8347-4560 

Fax: 86-755-8347-4460 


No. 222 Yan An Dong Lu Road 

Shanghai 

China 200002 P.R.C. 

Tel: 86-21-6103 3333 

Fax: 86-21-6335-2008 


Beijing Branch 

Raycom Info Tech Park 

No. 2 Science Institute South Road 

Beijing, China 100080, P.R.C. 

Tel: 86-10-8286 2868 

Fax: 86-10-8286 2848 

Micron Semiconductor India Private Limited 

The Millenia, Tower C, Level Plaza, 

No 1 & 2 Murphy Road, Ulsoor, 

Bangalore - 560008, India 

Tel: 91-80-41471808 

Fax: 91-80-41471901 

Micron Japan, Ltd., Tokyo Office 

Sumitomo Fudosan Mita Twin Building East 

2-8 Shibaura 4-Chome Minato-ku 

Tokyo, Japan 108-0023 

Tel: 81-3-5439-3300 

Fax: 81-3-5439-3310 

Micron Japan, Ltd. 

Twin 21 MID Tower 31F 

2-1-61, Shiromi, Chuo-ku 

Osaka, Japan 540-6131 

Tel: 81-6-4790-6212 

Fax : 81-6-4791-0578 

Micron Semiconductor Korea Co., Ltd. 

5th floor Glass Tower 

534 Teheran-ro, Gangnam-gu 

Seoul, Korea, 135-708 

Tel: 82-2-530-7800 

Fax: 82-2-530-7895 

Micron Semiconductor Asia Pte. Ltd. 

990 Bendemeer Road 

Singapore 339942 

Tel: 65-6290-3000 

Fax: 65-6290-3639 

Micron Technology Asia Pacific Inc., 

Taiwan Branch 

International Trade Bldg. at Taipei World Trade Center Suite 

Suite 2508, 25F 

333 Keelung Road, Sec. 1 

Taipei, 110 Taiwan 

Tel: 886-2-2757-6622 

Fax: 886-2-2757-6656

The memory 

Experts 

For data sheets, technical notes, and other product and sales 

information, visit Micron’s Web site or phone us today. 

micron.com (208) 368-3900 

©2011 Micron Technology, Inc. All rights reserved. Micron, the Micron logo, ClearNAND, and RealSSD are trademarks of Micron Technology, Inc. RLDRAM is a trademark of 

Qimonda AG in various countries, and is used by Micron Technology, Inc. under license from Qimonda. CellularRAM is a registered trademark of Micron Technology, Inc., inside 

the U.S. and a trademark of Qimonda AG outside the U.S. e•MMC and MultiMediaCard are trademarks of the MultiMediaCard Association. All other trademarks are the 

property of their respective owners. Lead is not intentionally added by Micron during the manufacturing process, but it can be present in trace amounts in the raw materials 

used to manufacture the finished products. Products are warranted only to meet Micron’s production data sheet specifications. Products and specifications are subject to 

change without notice. Rev. 11/11 EN.L

right - Micron

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