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Testing 1 - UCSB SoC Design and Test Lab

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Failure rate<br />

Typical Bathtub Curve of IC’s<br />

Failure Rate<br />

Earlyfailure<br />

period<br />

Useful-life period<br />

Wearout<br />

period<br />

Cumulative operating time<br />

~1,000 hours >10years<br />

© K.-T. Cheng, component.ppt, v1.0<br />

15<br />

Burn-in <strong><strong>Test</strong>ing</strong><br />

! Correlations have been made between life span at room<br />

temperature & life span at elevated temperature.<br />

! Charts of these correlations have been made for each<br />

technology<br />

! Put the device in a furnace for a certain length of time at<br />

an elevated temperature <strong>and</strong> voltage<br />

– By applying high voltage to the IC’s pins, burn-in<br />

accelerates the time-to-failure of oxide defects (weak<br />

oxide, pin holes, uneven layer growth, etc) typically<br />

found in MOS devices<br />

– High temperature accelerates these <strong>and</strong> other defects,<br />

such as ionic contamination <strong>and</strong> silicon defects<br />

© K.-T. Cheng, component.ppt, v1.0<br />

16

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