FUTURE NON-VOLATILE MEMORY TECHNOLOGIES
FUTURE NON-VOLATILE MEMORY TECHNOLOGIES
FUTURE NON-VOLATILE MEMORY TECHNOLOGIES
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CONT‟D<br />
• Write takes place only on the bit in the array which is<br />
at cross point of the 2 lines.<br />
• The value stored depends on the resultant of the<br />
applied magnetic fields.<br />
• The “1” or “0” is stored by putting the free layer<br />
magnetic moment into the anti-parallel or parallel<br />
state.<br />
12
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