FUTURE NON-VOLATILE MEMORY TECHNOLOGIES
FUTURE NON-VOLATILE MEMORY TECHNOLOGIES
FUTURE NON-VOLATILE MEMORY TECHNOLOGIES
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READ OPERATION<br />
(Destructive Read)<br />
•Precharge BL to 0 V<br />
•Activating WL establishes a capacitor<br />
divider between the PL and the ground is<br />
established<br />
•Depending on the data stored, FE<br />
capacitor can be approximated by C0 or C1<br />
and thus voltage could be V0 or V1<br />
•PL raised to VDD<br />
•At this point, the sense amplifier is<br />
activated to drive the BL<br />
If BL is V1 then full VDD<br />
If BL is V0 then full 0V<br />
•The WL is kept activated until the sensed<br />
voltage on the BL restores the original data<br />
back into the memory cell<br />
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