CPFC - Arizona Nanotechnology Cluster

The Path to Manufacturing Nano-Photonics
Components
Canadian Photonics Fabrication Center – CPFC
De-risking Technology & Investment
Enabling Commercialization
Sylvain Charbonneau
Director, Applications Technologies
Arizona’s Second Annual Nanotechnology Symposium, March 23 rd , 2007

NRC: A National Institution
• National organization,
federal government agency
• Provides essential
elements of national S&T
infrastructure
• 4,116 employees
• 1,446 visiting / guest
workers
• Labs and facilities across
the country
• Total expenditures
2005-06: $767M
• Income 2005-06: $103M

Major Research Thrusts
• Information and communications
• Biotechnology
• Nanotechnology
• Manufacturing
• Aerospace, construction and
ocean technologies
• Metrology
• Astronomy

IMS Mission
• To play a pivotal role in the creation and
development of photonic, optical and
quantum devices
• Ensure diffusion into the Innovation
System
• Communications, Health, Environment,
Energy and Security

IMS at a glance
Locations: Ottawa
M50, M23-A, M36
Budget - IMS: $14M (+$5M)
- CPFC: ($43M/5yrs)
Staff: 160 (~95PhD)
Guest workers: ~40
Publications: ~180/year
Technologies: ~100
Spin-offs: 6+1 (since 1996)

Core Competencies
• Semiconductors:
inorganic & organic
• Nanofabrication
• Photonic & Quantum Devices
• PIC & Component Prototyping
• Optical Interference Coatings
• Optics Shop
• Acoustics
Energy Gap (eV)
GaN
2.5
2.0
1.5
1.0
0.5
0.0
AlP
GaP
Si
GaNAs
Ge
AlAs
GaAs
InGaAs
InGaNAs
InP
InAs
AlSb
GaSb
InGaAsSb
InSb
5.4 5.6 5.8 6.0 6.2 6.4 6.6
Lattice Constant (A)
0.5
0.8
1.55
2.0
5.0
Wavelength (micron)

IMS activities 2007
THz &
Imaging
Optoelect
Devices
Organic
Devices
Quantum
Physics
Quantum
Theory
Epitaxy &
MultiLayer
Surfaces /
Interfaces
NanoFab Optics Photonic
Systems
CPFC Acoustics Example
partnersr
COMMUNICATIONS
QI: Nanoelectronics • • • • • • DARPA
QI: Nano-Photonics • • • • • • CIAR
CNTs for EL-FETs • • • • Japan S&T
GaN HFETs • • • • • CSA
High Contrast OLEDs • • • industry
Wavelength Mtg • • • • DND
HEALTH
THz & Imaging • • • • • • GHI
BioFETs • • • GHI
Micro-Photonics • • • • • GHI
Optical Probes • • • CIPI
Hearing Aids • industry
ENVIRON & ENERGY
Mid-iR Lasers • • • • • • • • industry
PhotoVoltaics • • • • • ICPET
TECH PLATFORMS
Acoustics • industry
Device Prototyping • industry

Self-Assembled
Quantum Dots (SAQD)

(001)
SAQD - Basis for
Single Photon Emitter
(101) (011)
SiO 2 mask
InP pyramid
InAs
dots
Advantages:
Fully in-situ development of
structures for single dot
spectroscopy.

Electrical connection
of Single QDs

Single Photon Gun
Transmission [%]
100
80
60
40
20
CAVITY RESPONSE
PL Intensity [a.u.]
Design: 8 pair mirrors
500 μeV
535μeV
0
650 700 750 800 850 900 950 1000 1050
Energy [meV]
830 835 840 845 850 855 860 865
Energy [meV]

Nano Electronics -
controlling electrons
on the nanoscale
Challenge:
How to control
one out of many?

1995 NATO Workshop
Increased miniaturisation:
“The writing is on the wall”
(but it is getting smaller!)
Year to achieve production feature size:
1991 1996 2000 ??
1000
Why smaller features?
– lower cost
– faster performance
– lower power
– higher integration
Lithographic limits:
– driven by eg RAMs
– devices and interconnect
Physical lim its:
– ‘handful of electrons’
– upset resilience
– interconnect delay
Number
of
electrons
in a
channel
100
10
1
10 11
electrons.cm -2
10 12
electrons.cm -2
1.0 0.6 0.2 0.1 0.06 0.02 0.01
channel length (& width) in m icrons

Single Electron Transistor:
Surface Gates
90 nm
LOCALIZING
CONTROLLED NUMBER
OF ELECTRONS 1-100
AlGaAs
GaAs
2D electron gas at
GaAs/AlGaAs
SOURCE
POTENTIAL
ENERGY
LANDSCAPE
DRAIN

Artificial
Atoms and Molecules
QUANTUM DOT
P QPC
QPC

Spin-charge readout (DL & DPDiV)
CNOT & CPHASE…
3-dots-in-a-line device
SINGLE CQD
MESA
3-dots-in-a-circle device
4-dot-array device
DARPA QuIST project (2001-06):
“NRC-IMS: 3- 3 & 4-laterally 4
coupled
vertical semiconductor quantum dots
for spin-qubit circuits"
4-dot-array device
Entanglement & coded qubits
CNOT & CPHASE…

Single Wall –
Carbon Nanotubes
Single SWNT PL
-strong, polarized, sub-k B T width
-diameter dependent peak position
see J. Lefebvre et al. PRB 69 075403 (2004)
& PRL 90 217401 (2003)

Silicon nitride
passivation
20 nm AlGaN
1 nm AlN
200 nm GaN
2µ C:GaN
20 nm AlN
Sapphire or SiC
Ni/Au or Pt/Au
Gate
Primary Focus: GaN
power transistors
(HFETS)
Alloyed n-type contacts
AlGaN barrier layer
AlN spacer layer
Undoped channel layer
Insulating C-doped
isolation layer
Nucleation layer
Robust and well-established fabrication sequence yielding 0.8µ
optically defined gates

Fully processed 2 inch
GaN on SiC wafer

GaN power
transistors (HFETS)
- DC and RF results
E-beam written T-gates; 0.15 µm gate length on SiC
f T =103 GHz, f MAX =170 GHz
Drain current (A/mm)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V g
from 3 to -5 V, step -1 V
Gain (dB)
40
30
20
10
V ds
=10 V
V g
=-2.5 V
H 21
UPG
0.0
0 5 10 15 20
Source-drain voltage V ds
(V)
0
10 100
Frequency (GHz)

Ottawa Photonics Valley
Canadian Photonics
Fabrication Centre (CPFC)
• Pure-play foundry service
• Prototyping & Small Production
• Unique facility in North America
for industry and universities
• Component and device
fabrication
• Linking photonics clusters to
NRC's national facilities,
networks, competencies and
incubation services

NRC: Bridging the
innovation gap
Discovery,
Basic Research
Pre-competitive,
Strategic Research
Proof of Concept
& Prototypes
Industrial
Innovation
Products in the
Marketplace
UNIVERSITY RESEARCH
NRC RESEARCH
INDUSTRIAL RESEARCH
CPFC – IRAP
Value
For
Industry
DISCOVERY TO INNOVATION TIMELINE

What is the Gap?

Mission
CPFC Mission
• To facilitate the commercialization and de-risking of photonic
technology and investment by providing a world class industrial
grade facility that bridges the gap from innovation to product.
Core
Technologies
III - V
Core Technology
Silicon
Strategy
• Establish technology platforms and reusable
process blocks in two materials
sets
• Fill up the “tool box” by demonstrating
selected devices
• Look for applications/clients in a broad
range of markets (not just telecom)
Competencies Applications
• Design
• Epiwafers
• Processed wafers
• Bars, Chips
• Chip test
PASSIVES & ACTIVES
Telecom & Data
FP Lasers, DFB lasers, PIN’s, Mux,
Demux, TOS, OADM’s, R-OADM’s,
Tuneable lasers, Modulators,
Integrated TX + Rx, OCM’s, Spot size
convertors
Biophotonics
Spectroscopy, Sensors, Imaging,
Lasers
Defense, Environmental,
Security, Consumer
• Design
• Dielectrics & SOI
• Processed wafers
• Bars, Chips
• Chip test
PASSIVES & ACTIVES
Telecom & Data
Mux, Demux, TOS, OADM, R-OADM,
SOB’s, Microfluidics, Splitters
Biophotonics
Spectroscopy, Sensors, Imaging
Defense, Environmental,
Energy, Imaging, Security,
Consumer

Marketing Roadmap
The CPFC has been engaging with a variety of customers representing a
variety of markets. The distribution has been heavily weighted by telecom due
to our location and the dependence telecom has for photonics. Other markets
may represent higher growth potentials over the next few years.
1. Communications
2. Biomedical /Health
3. Defense and Security
4. Environmental
5. Energy and Space
Growth Rate
Security & Defense
Environment
BioMedical / Health
Telecom
Energy
Today
Time
3-5 years

CPFC Infrastructure
Size: 40,000 ft 2 lab and office space
Clean room : bay & chase configuration: total area 12,000 ft 2
Personnel: 18 fab engineers & staff at present
Epitaxy: MOCVD Multi-wafer reactor (2”, 3”, 4”, 6”)
InP & GaAs-based
Deposition:
Lithography:
Etchers:
PECVD, LPCVD, and Thermal grown oxides
Thick SiO 2
(silica-on-silicon) & Thin SiO 2
+ SiN
Stepper, mask aligners, e-beam &
nano-imprinting
Stand alone for deep oxide, Si & III-V
Metallization:
e-beam & sputtering
Leveraged on top of extensive existing IMS infrastructure:
Device physics, Design & Modeling, Test & Characterization, Surface and
Interfaces, Nanofabrication

Lithography
Complete suite of resist tracks and exposure
tools including:
• Contact aligners (with backside alignment capability)
• i-line stepper (with ~0.35µm resolution)
• Holographic exposure tool (for uniform gratings to ~ 100nm
resloution)
• E-beam lithography (resolution 25nm) – not SEM
• Nanoimprint lithography (resolution shown at 60nm)
All set up for full wafer fabrication to achieve:
• Uniformity
• Process control
• Reproducibility
• Automated alignment (stepper, nanoimprint, e-beam)
Emerging trend towards
nanostructured devices

Electron beam lithography facility
• 5 nm diam. spot
• 20 nm lines
JEOL JBX-6000 FS
• 40 nm field
stitching acc.
• 150 x 150 mm
write area
• 200 mm wafers
• 6” masks

Lithography process examples
Stepper
lithography
1µm
60nm
High throughput
E-beam
lithography
Low throughput
Laser
Holography
200nm

Fabrication of
DFB lasers
1st order holographic gratings
DFP Lasers
25
L = 300 μm; w = 2.4 μm; T = 20 C
2
0
-10
Power [mW]
20
15
10
5
0
0.4
0 50 100 150 200
Current [mA]
Ith = 16.4 mA
Eff = 0.22 W/A
Rs = 8.0 Ohms
DFB laser (CL/AR bar),
W=2.4 μm, L=300 μm, T=20 °C, T 0
=70 K
Spectra at 100 mA
1.8
1.6
1.4
1.2
1
0.8
0.6
Voltage [V]
Ith (mA
Intensity [dBm]
-20
-30
-40
-50
-60
-70
-80
1534 1536 1538 1540 1542 1544
Wavelength [nm]
70
RWG GC DFB Aging- 85 C, 70 mA
65
60
55
50
45
0 100 200 300 400 500 600 700 800
Aging Time (hrs)
DFB1
DFB2
DFB3
DFB4
DFB5
DFB6
DFB7
DFB8
DFB9
DFB10

Surface Emitting BHET laser
3.5
3
Top
1.8
1.6
2.5
1.4
Power [mW]
2
1.5
1.2
1
Voltage [V]
1
0.8
0.5
0.6
Edge
0
0.4
0 50 100 150 200
Current [mA]
E-beam gratings, etch
& MOCVD overgrowth
ICP etch, & MOCVD
blocking layer selective
regrowth
P-metal patterned around
aperture
-30
-40
75 mA
-50
Intensity [dBm]
-60
-70
-80
-90
-100
CPFC Confidential
1512 1514 1516 1518 1520 1522 1524
Wavelength [nm]

CPFC’s Gateway to Nanotechnology
Cross-section 70nm lines (1 : 1.5)
Template made by E-
beam lithography and
ICP etching
Top view 70nm lines (1 : 1.5)

Gratings by nano-imprint lithography
Fused silica
template
UV blanket
exposure
Planarization layer
Substrate
Step 1: Align template and substrate
Step 4 : Expose with UV to harden imprint resist
Imprint resist
Step 2 : Create drop pattern with imprint resist
Imprinted grating
pattern
Imprint resist fills
template grating
pattern
Step 5 : Withdraw template from substrate
Step 3 : Lower template and fill pattern
Schematic showing step and flash imprint lithography (S-FIL)

Advantages and disadvantages of grating
fabrication by NIL
Advantages
• Takes advantage of the resolution offered by electron beam
lithography to pattern the template.
• The resolution is only limited by the pattern resolution of the
template.
• The template can be used many times either for multiple fields per
wafer or for the whole wafer printed at once, therefore providing a
higher throughput than e-beam direct write.
Disadvantages
• A template must first be fabricated to imprint the gratings.
• Imprinting is problematic on non-flat surfaces.

Grating metrology (pitch)
Grating pitch for holographic gratings was
measured by finding the difference between
the Littrow angle of the grating and the angle
of normal reflection. A set of 5 trials were
taken without removing the wafer from the
stage, the standard deviation was found to
be less than 0.02 nm.
The grating pitch uniformity for holographic
gratings was assessed with measurements
taken at 5 mm steps across a 3-inch wafer.
There is a definite increase in grating pitch
across the wafer, possibly caused by the wafer
bending while held on the vacuum chuck.
200.09
200.07
200.05
Grating pitch [nm]
200.03
200.01
199.99
199.97
199.95
-30 -20 -10 0 10 20 30
Distance from centre of wafer [mm]
Holographic grating pitch repeat measurements taken
from the centre of 3 separate 3-inch InP wafers.
Holographic grating pitch measurement as a function
of position from the centre of a 3-inch wafer.

CPFC - Summary
Test
Design
Back -
End
Epitaxy
CPFC
Metal
Deposition
Litho
Etching`
Complete Prototype Manufacturing:
• Design & Modeling
• Prototyping (controlled monitored
processes)
• Fabrication (i.e. specialized deposition or
etch)
• Specialty Masks & e-beam Lithography
• Development (process change)
• Epitaxial Services
• Materials and Device Testing and Analysis
• Consulting
• Technology Licensing & Training

The CPFC will provide value by
• Reducing start-up costs
• Reducing time to market
• De-risking the technology
• De-risking the investment opportunity
Bridging the gap to commercialization!

Canadian Photonics Fabrication Center