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Scanning Near-Field Optical Microscopy and Spectroscopy as a ...

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<strong>Optical</strong> <strong>Near</strong>-<strong>Field</strong> <strong>Microscopy</strong>Several research groups have begun to implement Ramanmicroscopes where the excitation uses an aperture SNOMprobe. [52±62] The alternative is again to use apertureless probes:A very sharp tip, usually a metallic STM or AFM tip, can beused for field enhancement inside the diffraction-limitedfocus of the illuminating l<strong>as</strong>er beam. The position of the tipcan be temporally modulated in order to employ lock-indetection schemes. [23, 24] Resolution to 10 Š h<strong>as</strong> been claimedusing this method, albeit not with Raman scattering. It is,however, still unclear where the optical contr<strong>as</strong>t originatesfrom. For example, it is possible that light reflected off the sideof the probe contributes more to the overall signal thanradiation from the apex of the probe. A shadowing effect canalso occur, which may even cause a reversal of the opticalcontr<strong>as</strong>t. Clever schemes, for example using two-photonexcitation, can be used to circumvent these problems. [27]Figure 5 shows an image of a silver SERS substrate that w<strong>as</strong>specially designed to contain isolated isl<strong>and</strong>s of silver withoutany topographic substructure. [63] The substrate w<strong>as</strong> thencoated with an adlayer of rhodamine 6G (R6G). First, theFigure 5. Shear-force topographic image of a substrate with a SERScoating. For near-field Raman me<strong>as</strong>urements, a monolayer of rhodamine6G is applied. At various locations, marked by the circles, near-fieldSERS me<strong>as</strong>urements were made. The circles are 70 nm in diameter <strong>and</strong>represent the optical resolution obtained with the SNOM tip. The poleheights above the transparent plane denote the relative signal intensity ofthe Raman peak at 1650 cm 1 . The signals are normalized against theaverage Raman intensity me<strong>as</strong>ured on unmetallized gl<strong>as</strong>s slides. Eachsegment of the poles corresponds to an 1000-fold signal enhancement.surface morphology w<strong>as</strong> me<strong>as</strong>ured using the shear-forcefeedback-loop mechanism. The SNOM probe w<strong>as</strong> thenparked at selected positions of the depicted 1 1 mm area<strong>and</strong> the Raman spectrum of the R6G layer w<strong>as</strong> me<strong>as</strong>ured.Each me<strong>as</strong>ured position in Figure 5 is depicted by a whitecircle, the diameter of which (about 70 nm) indicates theapproximate optical resolution obtained by the SNOM tip.Each position w<strong>as</strong> illuminated for one minute through theSNOM tip, to yield the characteristic Raman spectrum ofR6G. The optical resolution of the tip w<strong>as</strong> determined byinherent spectral variation in the Raman spectra of adjacentlocations; scanning electron micrographs of the used SNOMREVIEWStips confirmed this estimate of 70 nm. Assuming a monolayercoverage of the dye, a spot size of this diameter corresponds toa sensitivity of less than 100 R6G molecules!As a me<strong>as</strong>ure for the Raman enhancement factor (EF), thenormalized <strong>and</strong> background-corrected Raman peak intensitiesat 1650 cm 1 were selected, which correspond to anaromatic C C stretch vibration of R6G. The magnitude of thisb<strong>and</strong> w<strong>as</strong> directly compared with the average value obtainedfor unmetallized, R6Gcoatedsubstrates. The calculatedEFs are superimposedon the topographicimage of Figure 5. Eachsegment of the poles correspondsto an additional1000-fold signal enhancement.The EFs lay between2000 to well above 6000,with over a 50 % variationobserved in the Raman intensityfor two points separatedby less than 100 nm.Interestingly, the overallEF me<strong>as</strong>ured by far-fieldoptics w<strong>as</strong> higher still,around 11 000. We still cannotfully explain the discrepancybetween the enhancementfactors determinedby near-field <strong>and</strong>far-field me<strong>as</strong>urements.Perhaps ªhot spotsº withmuch higher EFs exist onthe substrate, which cannotbe found in the near field.Alternatively, cumulativeeffects of neighboring isl<strong>and</strong>smay play a role. Afurther possibility is thatthe aluminum coating ofthe SNOM tip deterioratesthe EF near the silver isl<strong>and</strong>sby some electrostaticinteraction <strong>as</strong> soon <strong>as</strong> theSNOM tip is in proximity.We have also demonstratedhigh resolutionRaman imaging is possiblewith the near-field optics.Figure 6 A shows the shearforcetopograpic image <strong>and</strong>Figure 6 B ± D the opticalimages of a 2 2 mm areaof a SERS-coated substrate,which consisted ofsilver-coated Teflon microsphereswith an overall diameterof 300 nm. [61] Theshear-force topography im-Figure 6. SNOM-SERS imaging of aBCB-labelled DNA sample depositedon a substrate consisting of monodispersesilver spheres for SERSenhancement. Lateral dependenceof: A) shear-force topography;B) the Raman signal intensity at800 cm 1 (gl<strong>as</strong>s); C) the near-fieldsurface-enhanced Raman intensityat 1641 cm 1 (BCB) before normalization;<strong>and</strong> D) the near-field surface-enhancedRaman intensity at1641 cm 1 after normalization. Inimages (B) ± (D), the pixel size w<strong>as</strong>only 100 100 nm <strong>and</strong>, for eachgraph, the intensity of one line ofthe complete Raman spectrum w<strong>as</strong>plotted. In images (C) <strong>and</strong> (D), thecontr<strong>as</strong>t between the lowest <strong>and</strong> thehighest Raman intensity w<strong>as</strong> about afactor of three.Angew. Chem. Int. Ed. 2000, 39, 1746 ± 1756 1751

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