Datasheet - GlobalFoundries 65nmG 1.5V I/O protection ... - Sofics

Data sheet1.5V I/O protectionDual diode protectionLow capacitive loadingGlobalFoundries 65nm GSofics has verified its TakeCharge ESD protection clamps on technologynodes between 0.25um CMOS down to 28nm across various fabs andfoundries. The ESD clamps are silicon and product proven in more than1500 mass produced IC-products. The cells provide competitive advantagethrough improved yield, reduced silicon footprint and enable advancedmultimedia and wireless interfaces like HDMI, USB 3.0, SATA, WIFI, GPSand Bluetooth.The ESD diodes described in this document can be used for the 1.5Vinterfaces in GlobalFoundries 65nm CMOS technology. The cell featureslow leakage current, small silicon footprint and low parasitic capacitiveloading.

Data sheet: GlobalFoundries 65nmG 1.5V I/O protectionGlobalFoundries 65nm 1.5V I/O protectionDS-GF65G-A1V5Clamp type and usageThe Sofics ESD cells cover all types of protection concepts and approaches as detailed in the figure below. The ESDclamp cell described in this document is a type A clamp.Core ProtectionGlobalFoundries 65nm G 1.5V CommentsInput Protection YES Needs efficient power clampOutput Protection YES Needs efficient power clampI/O Protection YES Needs efficient power clampOver Voltage Tolerant I/O (OVT)Under Voltage Tolerant I/O (UVT)Inter Domain ProtectionStress cases coveredPAD to VSS Need separate power clamp VSS to PAD Diode downVDD to PAD Need separate power clamp PAD to VDD Diode upVDD to VSSVSS to VDDConnections in the cell Vdd, Vss, I/OFeatures Efficient ESD protectiono > 3 kV Human Body Model (HBM)o > 200 V Machine Model (MM) Leakage

Data sheet: GlobalFoundries 65nmG 1.5V I/O protectionMaximum ratingsDS-GF65G-A1V5Rating Symbol Value UnitSupply Voltage Range (DC) V DD -0.3 1.65 VInput/Output Voltage Range (DC) V IO -0.3 1.65 VOperating Temperature T op -25 125 °CBurn-in Voltage (DC @ 125°C) 2.25 VMinMaxStresses exceeding these maximum ratings may damage the device. Functional operation above the recommended operatingconditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect devicereliability.The provided golden cell is designed for these maximum ratings/specifications. If the desired specification level differs, thegolden cell has to be scaled up or down by using the Sofics implementation/scaling guidelines to remain a robust andeffective ESD protection for the different specifications.Electrical CharacteristicsT amb = 25°C unless stated otherwiseParameter Symbol Typ. UnitTrigger Voltage V t1 Depends on power clamp VHolding Voltage V h VLeakage current @ T amb = 25 °C I leak 100 pALeakage current @ T amb = 120 °CI leakTotal Capacitance Load, 0V bias C L

Data sheet: GlobalFoundries 65nmG 1.5V I/O protectionAbout SoficsDS-GF65G-A1V5Sofics (www.sofics.com) is the world leader in on-chip ESD protection. Itspatented technology is proven in more than a thousand IC designs across allmajor foundries and process nodes. IC companies of all sizes rely on Sofics for offthe-shelfor custom-crafted solutions to protect overvoltage I/Os, other nonstandardI/Os, and high-voltage ICs, including those that require system-levelprotection on the chip. Sofics technology produces smaller I/Os than any genericESD configuration. It also permits twice the IC performance in high-frequency andhigh-speed applications. Sofics ESD solutions and service begin where the foundrydesign manual ends.ESD SOLUTIONS AT YOUR FINGERTIPSOur service and supportOur business models include Single-use, multi-use or royalty bearing license for ESD clamps Services to customize ESD protectiono Enable unique requirements for Latch-up, ESD, EOSo Layout, metallization and aspect ratio customizationo Area, capacitance, leakage optimization Transfer of individual clamps to another target technology Develop custom ESD clamps for foundry or proprietary process Debugging and correcting an existing IC or IO ESD testing and analysisNotesAs is the case with many published ESD design solutions, the techniques andprotection solutions described in this data sheet are protected by patents andpatents pending and cannot be copied freely. PowerQubic, TakeCharge, andSofics are trademarks of Sofics BVBA.VersionAugust 2012Sofics Proprietary – ©2012 Page 4