BSS84/BSS110 P-Channel Enhancement Mode Field Effect Transistor

ELECTRICAL CHARACTERISTICS (T A= 25°C unless otherwise noted)Symbol Parameter Conditions Type Min Typ Max UnitsOFF CHARACTERISTICSBV DSSDrain-Source Breakdown Voltage V GS= 0 V, I D= -250 µA All -50 VI DSSZero Gate Voltage Drain Current V DS= -50 V,V GS= 0 VAll -15 µAT J= 125°C -60 µAV DS= -25 V, V GS= 0 V -0.1 µAI GSSRGate - Body Leakage, Reverse V GS= -20 V, V DS= 0 V All -10 nAON CHARACTERISTICS (Note 1)V GS(th)Gate Threshold Voltage V DS= V GS, I D= -1 mA All -0.8 -1.75 -2 VR DS(ON)Static Drain-Source On-Resistance V GS= -5V, I D= -0.10 A BSS84 3.2 10 ΩV GS= -10 V, I D= -0.17 A BSS110 2.2 10g FSForward Transconductance V DS= -25 V, I D= -0.10A BSS84 0.05 0.27 SDYNAMIC CHARACTERISTICSC issInput Capacitance V DS= -25 V, V GS= 0 V,f = 1.0 MHzV DS= -10 V, I D= -0.17 A BSS110 0.05 0.29BSS84 37 45 pFBSS110 37 40C ossOutput Capacitance All 16 25 pFC rssReverse Transfer Capacitance All 5 12 pFSWITCHING CHARACTERISTICS (Note 1)t D(on)Turn - On Delay Time V DD= -30 V, I D= -0.27 A,All 12 nSt rTurn - On Rise Time V GS= -10 V, R GEN= 50 ΩAll 50 nSt D(off)Turn - Off Delay Time All 10 nSt fTurn - Off Fall Time All 25 nSDRAIN-SOURCE DIODE CHARACTERISTICSI SContinuous Source Diode Current BSS84 -0.13 ABSS110 -0.17I SMMaximum Pulsed Source Diode Current (Note 1) BSS84 -0.52 ABSS110 -0.68V SDDrain-Source Diode Forward Voltage V GS= 0 V, I S= -0.26 A (Note 1) BSS84 -0.95 -1.2 VNote:1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.V GS= 0 V, I S= -0.34 A (Note 1) BSS110 -1 -1.2BSS84 Rev. C2 / BSS110. Rev. A3

DTypical Electrical CharacteristicsI , DRAIN-SOURCE CURRENT (A)D-1-0.8-0.6-0.4-0.2V = -10VGS-8.0-6.0-5.0-4.5-4.0-3.5-3.0-2.5R DS(on) , NORMALIZEDDRAIN-SOURCE ON-RESISTANCE32.521.51V = -3VGS-3.5-4.0-4.5-5.0-6.0-8.0-100-1-2 -3 -4V DS , DRAIN-SOURCE VOLTAGE (V)-5-60.5-0.2-0.4 -0.6I , DRAIN CURRENT (A)D-0.8-1Figure 1. On-Region CharacteristicsFigure 2. On-Resistance Variationwith Drain Current and Gate Voltage1.63R DS(ON) , NORMALIZEDDRAIN-SOURCE ON-RESISTANCE1.41.210.8I D = -0.13AV = -10VGSR DS(on) , NORMALIZEDDRAIN-SOURCE ON-RESISTANCE2.521.51V = -10VGST = 125°CJ25°C-55°C0.6-50 -25 0 25 50 75 100 125 150T J , JUNCTION TEMPERATURE (°C)0.5-0.2-0.4 -0.6I D , DRAIN CURRENT (A)-0.8-1Figure 3. On-Resistance Variationwith TemperatureFigure 4. On-Resistance Variationwith Drain Current and TemperatureI , DRAIN CURRENT (A)-1-0.8-0.6-0.4-0.2V = -10VDST = -55°C J25°C 125°CV , NORMALIZEDthGATE-SOURCE THRESHOLD VOLTAGE1.11.0510.950.9V DS = V GSI D = -1mA0-2-4-6VGS, GATE TO SOURCE VOLTAGE (V)-80.85-50 -25 0 25 50 75 100 125 150T , JUNCTION TEMPERATURE (°C)JFigure 5. Transfer CharacteristicsFigure 6. Gate Threshold Variationwith TemperatureBSS84 Rev. C2 / BSS110. Rev. A3

STypical Electrical Characteristics (continued)BV , NORMALIZEDDSSDRAIN-SOURCE BREAKDOWN VOLTAGE1.11.0510.95I D = -250µA0.9-50 -25 0 25 50 75 100 125 150TJ, JUNCTION TEMPERATURE (°C)-I , REVERSE DRAIN CURRENT (A)10.50.20.10.050.010.005V GS = 0VT = 125°C J25°C-55°C0.0010.2 0.4 0.6 0.8 1 1.2 1.4 1.6-V SD , BODY DIODE FORWARD VOLTAGE (V)Figure 7. Breakdown VoltageVariation with TemperatureFigure 8. Body Diode Forward VoltageVariation with SourceCurrent and Temperature7010CAPACITANCE (pF)5030201053f = 1 MHzV GS = 0VC issC ossC rss-V GS , GATE-SOURCE VOLTAGE (V)8642I D= -0.13AV = -10VDS-20V-40V20.1 0.2 0.5 1 2 5 10 20 30 50-VDS, DRAIN TO SOURCE VOLTAGE (V)Figure 9. Capacitance Characteristics00 0.5 1 1.5 2Q g , GATE CHARGE (nC)Figure 10. Gate Charge CharacteristicsV GSV DDR Lon offt d(on) t tr d(off)VIN90%90%DV OUTV OUT10%10%R GENGDUT90%tttfFigure 11. Switching Test CircuitSV IN 50%50%10%PULSE WIDTHFigure 12. Switching WaveformsINVERTEDBSS84 Rev. C2 / BSS110. Rev. A3

Typical Electrical Characteristics (continued)g , TRANSCONDUCTANCE (SIEMENS)FS0.50.40.30.20.10-0.2T = -55°C J25°C-0.4 -0.6I , DRAIN CURRENT (A)D125°CV = -10VDSFigure 13. Transconductance Variation with DrainCurrent and Temperature-0.8-1-I , DRAIN CURRENT (A)D210.50.10.050.01RDS(ON) LimitV GS = -10VSINGLE PULSET A = 25°C100ms1s10sDC1ms10ms100us0.0051 2 5 10 20 30 50 80- V DS , DRAIN-SOURCE VOLTAGE (V)Figure 14. Maximum Safe Operating Arear(t), NORMALIZED EFFECTIVETRANSIENT THERMAL RESISTANCE10.50.20.10.050.010.002D = 0.50.20.10.050.020.01Single PulseRθJA(t) = r(t) * RθJAR = 350 C/WθJAT J - TA= P * R θJA(t)Duty Cycle, D = t 1 /t20.0010.0001 0.001 0.01 0.1 1 10 100 300t 1, TIME (sec)Figure 15. Transient Thermal Response CurveNote : Characterization performed using a circuit board with 175 o C/Wtypical case-to-ambient thermal resistance.P(pk)t 1t 2oBSS84 Rev. C2 / BSS110. Rev. A3

TO-92 Package DimensionsTO-92; TO-18 Reverse Lead Form (J35Z Option)(FS PKG Code 92, 94, 96)1:1Scale 1:1 on letter size paperDimensions shown below are in:inches [millimeters]Part Weight per unit (gram): 0.22* * ;Note: All package 97 or 98 transistors are leadformedto this configuration prior to bulk shipment. OrderL34Z option if in-line leads are preferred on package97 or 98.* Standard Option on 97 & 98 package codeJanuary 2000, Rev. B

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