SFH 506 IR-Empfänger/Demodulator-Baustein IR-Receiver ...

SFH 506InputControlCircuit100 k Ω2V SPINAGCBandpassDemodulator3OUT1GNDOHF02198BlockschaltbildBlock DiagramGrenzwerteMaximum RatingsBezeichnungDescriptionBetriebs- und LagertemperaturOperation and storage temperature rangeSperrschichttemperaturJunction temperature rangeLöttemperaturLötstelle 2 mm vom Gehäuse; Lötzeit t ≤ 5 sSoldering temperaturesoldering joint ≥ 2 mm distance frompackage, soldering time t ≤ 5 sBetriebsspannung Pin 2Supply voltageBetriebsstrom Pin 2Supply currentAusgangsspannung Pin 3Output voltageAusgangsstrom Pin 3Output currentVerlustleistungTotal power dissipationT A ≤ 85 °CSymbolSymbolWertValueT A , T stg – 25 ... + 85 °CT j 100 °CT S 260 °CV S – 0.3 ... + 6.0 VI CC 5 mAV OUT – 0.3 ... + 6.0 VI OUT 5 mAEinheitUnitP tot 50 mWSemiconductor Group 2

SFH 506Kennwerte (T A = 25 °C)CharacteristicsBezeichnungDescriptionBetriebsspannungSupply voltageBestrahlungsstärke (Testsignal, s. Figure 2)Threshold irradiance (test signal, see Fig. 2)SymbolSymbolWertValueV S typ. 5.0(4.5 ... 5.5)E e min(30-40 kHz)1)E e min(56 kHZ)1)E e max1)typ. 0.35 (< 0.5)typ. 0.4 (< 0.6)30Wellenlänge der max. Fotoempfindlichkeit λ s max 950 nmWavelength of max. sensitivitySpektraler Bereich der FotoempfindlichkeitRange of spectral sensitivityS = 10 % of S max∆λ 830 ... 1100 nmHalbwinkelHalf angleStromaufnahme Pin 2Current consumptionV s = 5 V, E v = 0V s = 5 V, E v = 40 000 Ix, sunlightAusgangsspannung Pin 3Output voltageI OUT = 0.5 mA, E e = 0.7 mW/m 2 , f = f 0 , T p /T = 0.4EinheitUnit1) In Verbindung mit einer typ. SFH 415 bei Betrieb mit I F = 0.5 A wird eine Reichweite von ca. 35 m erreicht.1) Together with an IRED SFH 415 under operation conditions of I F = 0.5 A a distance of 35 m is possible.VmW/m 2W/m 2ϕ ± 45 deg.I CC0.6 (< 0.8)I CC 1.0mAmAV OUT low < 250 mVSemiconductor Group 3

_10 k Ωoptional+5V3µC1*) only necessary to suppress power supply disturbancesGNDOHF02197Figure 1 Externe BeschaltungExternal circuitE e*) tt piV OT*)t pi400 µ s is recommended for optimal functionV OHV OLt pot po = t pi ± 160 µsOHF02195tFigure 2 TestsignalTest signalSemiconductor Group 4

SFH 506Relative sensitivityE e min /E e = f (f / f 0 )Sensitivity vs. dark ambient T p out = f (E e )λ = 950 nm, optical test signalSensitivity vs. supply voltagedisturbances, E e min = f (∆V S RMS )1.0OHF021871200OHF02189210OHF02192Ee min /Ee0.8Tp outµ s1000input burst duration2mW/mEe minf = f 010 kHz100 Hz0.68001106000.44000100.22000.00.70.8 0.9 1.0 1.1 1.2 1.3f / f0 -110 10 0 101 mW/m 2Ee210-110 -110 10 0 101210mV∆V310s RMSSensitivity vs. electric field disturbanceE e min = f (E), field strength of disturbance,f = f 0E2.2mW/m 2e min1.60.80.00.0OHF021910.4 0.8 1.2 kV/m 2.0ESensitivity vs. duty cycleE e = f (t p / T)9.02mW/m8.0Ee min7.06.05.04.03.02.01.0OHF021880.00.05 0.1 0.15 0.2 0.25 0.3 0.35 0.40 0.45t p / TVertical directivity ϕ y-20-30-10 0ϕ1.61.41.21.0OHF002460.8-400.640-500.450-6060-700.270-8080-9090-0.6 -0.4 -0.2 0 0.2 0.4 0.6102030Relative luminous intensityS rel = f (λ), T A = 25 o CS rel1.00.8OHF02193Sensitivity vs. bright ambientE e min = f (E), λ = 950 nm, ambientE2102mW/me minOHF02190Horizontal directivity ϕ x-10 0ϕ-201.61.410OHF00247201101.20.6-301.0300.80.40.20.0800850 900 950 1000 1050 nm 1150λ010-110 -210 10 -1 1001102W/m 2 10E-400.640-500.450-6060-700.270-8080-9090-0.6 -0.4 -0.2 0 0.2 0.4 0.6Semiconductor Group 5

SFH 506Output pulseT on , T off = f(E e )1.0msOHF00341T on ,T off0.8Ton0.6T off0.40.2λ = 950 nm010-10101102102 510 3 mW/m 10E eSemiconductor Group 6