SFH 506 IR-Empfänger/Demodulator-Baustein IR-Receiver ...
SFH 506 IR-Empfänger/Demodulator-Baustein IR-Receiver ...
SFH 506 IR-Empfänger/Demodulator-Baustein IR-Receiver ...
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<strong>SFH</strong> <strong>506</strong>Relative sensitivityE e min /E e = f (f / f 0 )Sensitivity vs. dark ambient T p out = f (E e )λ = 950 nm, optical test signalSensitivity vs. supply voltagedisturbances, E e min = f (∆V S RMS )1.0OHF021871200OHF02189210OHF02192Ee min /Ee0.8Tp outµ s1000input burst duration2mW/mEe minf = f 010 kHz100 Hz0.68001106000.44000100.22000.00.70.8 0.9 1.0 1.1 1.2 1.3f / f0 -110 10 0 101 mW/m 2Ee210-110 -110 10 0 101210mV∆V310s RMSSensitivity vs. electric field disturbanceE e min = f (E), field strength of disturbance,f = f 0E2.2mW/m 2e min1.60.80.00.0OHF021910.4 0.8 1.2 kV/m 2.0ESensitivity vs. duty cycleE e = f (t p / T)9.02mW/m8.0Ee min7.06.05.04.03.02.01.0OHF021880.00.05 0.1 0.15 0.2 0.25 0.3 0.35 0.40 0.45t p / TVertical directivity ϕ y-20-30-10 0ϕ1.61.41.21.0OHF002460.8-400.640-500.450-6060-700.270-8080-9090-0.6 -0.4 -0.2 0 0.2 0.4 0.6102030Relative luminous intensityS rel = f (λ), T A = 25 o CS rel1.00.8OHF02193Sensitivity vs. bright ambientE e min = f (E), λ = 950 nm, ambientE2102mW/me minOHF02190Horizontal directivity ϕ x-10 0ϕ-201.61.410OHF00247201101.20.6-301.0300.80.40.20.0800850 900 950 1000 1050 nm 1150λ010-110 -210 10 -1 1001102W/m 2 10E-400.640-500.450-6060-700.270-8080-9090-0.6 -0.4 -0.2 0 0.2 0.4 0.6Semiconductor Group 5
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