BD176/178/180 PNP Epitaxial Silicon Transistor - Profesor Molina

Medium Power Linear and SwitchingApplications• Complement to BD 175/177/179 respectivelyBD176/178/180BD176/178/1801 TO-1261. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings T C =25°C unless otherwise notedSymbol Parameter Value UnitsV CBO *Collector-Base Voltage : BD176: BD178: BD180V CEO Collector-Emitter Voltage : BD176: BD178: BD180V EBO Emitter-Base Voltage - 5 VI C Collector Current (DC) - 3 AI C *Collector Current (Pulse) - 7 AP C Collector Dissipation (T C =25°C) 30 WT J Junction Temperature 150 °CT STG Storage Temperature - 65 ~ 150 °C- 45- 60- 80- 45- 60- 80VVVVVVElectrical Characteristics T C =25°C unless otherwise notedSymbol Parameter Test Condition Min. Typ. Max. UnitsV CEO (sus) * Collector-Emitter Sustaining Voltage: BD176: BD178: BD180I C = - 100mA, I B = 0 - 45- 60- 80VVVI CBO Collector Cut-off Current : BD176: BD178: BD180V CB = - 45V, I E = 0V CB = - 60V, I E = 0V CB = - 80V, I E = 0- 100- 100- 100I EBO Emitter Cut-off Current V EB = - 5V, I C = 0 - 1 mAµAµAµAh FE1 * DC Current Gain V CE = - 2V, I C = - 150mAh FE2 V CE = - 2V, I C = - 1AV CE (sat) * Collector-Emitter Saturation Voltage I C = -1 A , I B = - 0.1A - 0.8 VV BE (on) * Base-Emitter ON Voltage V CE = - 2V, I C = -1 A - 1.3 Vf T Current Gain Bandwidth Product V CE = -10V, I C = - 250mA 3 MHz* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsedh FE ClassificntionClassification 6 10 16h FE1 40 ~ 100 63 ~ 160 100 ~ 250* Classification 16: Only BD 1764015250©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

Typical CharacteristicshFE, DC CURRENT GAIN1000100101-0.01 -0.1 -1 -10IC[A], COLLECTOR CURRENTVCE = -2VVBE(sat), VCE(sat)[V], SATURATION VOLTAGE-10-1-0.1VBE(sat)VCE(sat)-0.01-0.1 -1 -10IC[A], COLLECTOR CURRENTIC = 10 IBBD176/178/180Figure 1. DC current GainFigure 2. Base-Emitter Saturation VoltageCollector-Emitter Saturation Voltage-10IC MAX. (Pulsed)10µs4035IC[A], COLLECTOR CURRENTIC MAX. (Continuous)-1100µsBD176BD178BD180-0.1-1 -10 -100DC1msPC[W], POWER DISSIPATION3025201510500 25 50 75 100 125 150 175VCE[V], COLLECTOR-EMITTER VOLTAGETC[ o C], CASE TEMPERATUREFigure 3. Safe Operating AreaFigure 4. Power Derating©2001 Fairchild Semiconductor CorporationRev. A1, June 2001

Package DemensionsTO-126BD176/178/1803.90 ±0.108.00 ±0.303.25 ±0.20ø3.20 ±0.1014.20MAX11.00 ±0.200.75 ±0.10(1.00)(0.50)1.60 ±0.100.75 ±0.1013.06 ±0.3016.10 ±0.201.75 ±0.202.28TYP[2.28±0.20]#12.28TYP[2.28±0.20]0.50 +0.10–0.05Dimensions in Millimeters©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

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