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a design of the novel coupled-line bandpass filter using defected ...

a design of the novel coupled-line bandpass filter using defected ...

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CHAPTER 5CONCLUSION AND SUGGESTIONWe have introduced in this <strong>the</strong>sis <strong>the</strong> limitations <strong>of</strong> classical microstrip <strong>line</strong><strong>bandpass</strong> <strong>filter</strong> based low pass and band pass <strong>filter</strong>s and <strong>the</strong> way to improve <strong>the</strong> <strong>design</strong>and response by <strong>using</strong> <strong>the</strong> <strong>defected</strong> ground structures. New investigations arepresented <strong>the</strong> dumbbell shape for <strong>the</strong> DGS structure as an element for <strong>the</strong> BSF. Wehave also introduced <strong>the</strong> ultra-wideband band pass structure in DGS and used it for<strong>the</strong> development <strong>of</strong> a new compact BPF.5.1 ConclusionA parallel <strong>coupled</strong>-<strong>line</strong> <strong>bandpass</strong> <strong>filter</strong> cascading with <strong>defected</strong> ground structure<strong>of</strong> microstrip <strong>line</strong> is introduced and demonstrated in this <strong>the</strong>sis. The conventionalparallel <strong>coupled</strong>-<strong>line</strong> <strong>bandpass</strong> <strong>filter</strong> is firstly <strong>design</strong>ed and its response proposedunwanted passband. The cascading DGS with that parallel <strong>coupled</strong>-<strong>line</strong> BPFintroduces attenuation pole contributing <strong>the</strong> suppression <strong>of</strong> unwanted secondpassband. The wideband BPF is <strong>the</strong>n fabricated and evaluated. The <strong>filter</strong>performances are validated and exhibits |S 21 | more than -2 dB, |S 11 | less than -15 dB,center frequency <strong>of</strong> proposed <strong>filter</strong> is 4.1GHz with operating bandwidth 49% and cansuppress unwanted passband to below -15 dB.5.2 Problem and suggestion for future workThere are some residual errors between simulation and measurement due to fivereasons. First is <strong>the</strong> incorrect PCB engraving, second is <strong>the</strong> embedded parasitic effect<strong>of</strong> SMA connectors, third is error in fabrication process, fourth is changed ε r in highfrequency and <strong>the</strong> last problem come from low quality <strong>of</strong> FR4.The first, second and third problem can be overcome by considering o<strong>the</strong>rprecise realization process and <strong>the</strong> parasitic effect <strong>of</strong> SMA connector is ano<strong>the</strong>rembedded problem that can be de-embedded by <strong>using</strong> on wafer-measurement systemwhich is unaffordable for this study.The changed ε r can use piecewise simulation method (varies ε r by Figure 3-2)to solve it. By separate each simulation <strong>of</strong> range to 1 GHz for simulation and <strong>the</strong>result show in Figure 5-1.

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