Siletz BSI™ APD Photoreceivers - Voxtel

Siletz BSI APD Photoreceivers 

RxP-1000 Series 

Features 

▪ InGaAs/InAlAs single-carrier 

multipli cation APD (SCM-APD) 

▪ Integrated low-noise 

transimpedance amplifier 

▪ 950–1700nm spectral response 

▪ High responsivity 

▪ Low excess noise 

▪ High bandwidth 

▪ High gain 

▪ –5 to +75°C operating 

case temperature 

Applications 

▪ Range finding 

▪ LADAR/LIDAR 

▪ Fluorescence measurements 

▪ Free-space optical 

communication systems 

▪ Spectroscopy, electrophoresis, 

chromatography 

▪ Ultra-fast pulse 

and transient measurements 

SILETZ BSI APD Photoreceivers 

MHz- and GHz-Class Receivers with High-Gain, Low Excess 

Noise NIR Single-Carrier Multiplication APDs (SCM-APDs) 

Model RDP1-NJAF: 200µm APD, 350MHz 

Model RIP1-NJAF: 200µm APD, 1GHz 

Model RIP1-JJAF: 75µm APD, 2.2GHz 

Model R2P1-JCAA: 75µm APD, 1.5GHz TO-46 

Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862 

Voxtel Literature No. RxP1-xJAF, Version date: 06/2012 © 

Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice. 

Voxtel offers high-sensitivity photoreceivers based on its Siletz 

single-carrier multiplication APDs (SCM-APDs) in the RXP-1000 product 

series. High bandwidth as well as 75-μm and 200-μm optical areas 

make these ideal for laser rangefinders, laser designators, free space 

optical communication, optical instrumentation, and LADAR/LIDAR. 

Voxtel’s VFP-1000 Series of Siletz SCM-APDs integrates lownoise 

with transimpedance amplifiers (TIAs). Voxtel’s SCM-AP- 

Ds offer extremely low excess-noise NIR–SWIR APDs, allowing 

the receiver to operate at high avalanche gain, boosting the 

optical signal over the amplifier noise level without the degrading 

effects of avalanche-induced excess noise. These photoreceivers are 

the most sensitive receivers available on the market today. A singlestage 

thermoelectric cooler (TEC) is included to eliminate temperatureinduced 

gain variations and allow optimal performance over the range 

of application environments. 

Standard fiber pigtail options for the 75µm receivers include 62.5/125 

(0.37NA) graded-index and 105/125 (0.37NA) step-index multi-mode fibers; 

other fiber options can be custom ordered. Optionally available 

with the photoreceivers are Support Electronics Modules, which provide 

power conditioning and TEC control.

2 

APD Photoreceivers Siletz BSI 

S i l e t z S e r i e s A P D P h o t o r e c e i v e r s 

TO-46 

Package 

0.80 mm 

5.08 mm 

1.4 

0.80 mm 

2.54 mm 

57° 

1.0 

0.8 

0.6 

0.4 

0.2 

0.0 

12 

Ø 5.31 mm 

Ø 4.22 

Ø 2.54 

82° 82° 

BOTTOM VIEW 

1 2 3 

10.16 mm 

Ø 15.25 mm 

57° 

Ø 1.50 mm 

3 

4 

Ø 0.45 mm 

Voxtel SCM-APD Responsivity 

Voxtel SCM-APD QE 

5 

0.70 mm 

1 

TOP VIEW 

header only 

6.35 mm 

900 1100 1300 1500 1700 

Wavelength [nm] 

Spectral responsivity curve and quantum 

efficiency at gain M = 1, T = 295 K. 200-µm SCM-APD. 

2 

1 

5.38 

Pinout 

1) DOUT 

2) VDD 

3) V+ APD 

4) DOUT B 

5) GND 

Ø 16.50 mm 

17.14 mm 




1.37 

SIDE VIEW 

with cap 

2.70 

0.77 

4.70 

2.55 

2.39 ±0.15mm 

6.35 mm 

0.80 mm 

SIDE VIEW 

with cap 

10.16 mm 

Ø 15.25 mm 

Ø 1.50 mm 

BOTTOM VIEW 

Fiber-coupled TO-8 Package 

Ø 3.81 mm 

12.83 mm 3.61 mm 1000 mm 

5.08 mm 

0.80 mm 

2.54 mm 

1 2 3 

12 

Ø 8.00 mm 

Ø 16.50 mm 

BOTTOM VIEW SIDE VIEW 

TOP VIEW 

N/C 

N/C 

TO-8 

Package 

Gnd 

+APD 

Noise Equivalent Power [nW] 

Gnd 

18 

16 

14 

12 

10 

8 

6 

4 

2 

TSense 

TEC+ 

TSense+ (B/C) 

TSense– (E) 

VCC 

Out+ 

Out– 

TEC– 

RVC1-NJAF 

RYC1-NJAF 

RDC1-NJAF 

RDP1-NJAF 

RIP1-NJAF 

RIP1-JJAF (75µm) 


Ø 0.45 mm 

6.65 ±0.14mm 

0.38 ±0.03mm 

1) Gnd 

2) +APD 

3) TEC+ 

4) TSense– 

5) TEC– 

6) TSense+ 

Standard receiver configurations with typical 

NEP valves and bandwidths 

7) Out– 

8) Gnd 

9) Out+ 

10) VCC +3.3V 

11) N/C 

12) N/C 

0 

1.00E+08 1.00E+09 1.00E+10 

Bandwidth [Hz]



M o d e l R D P 1 - N J A F 

Specifications 

Parameter Min Typical Max Units 

Spectral Range, λ 950 1000–1600 1750 nm 

Active Diameter 200 μm 

Bandwidth 350 MHz 

APD Operating Gain, M 1 10-30 40 

Receiver Responsivity at M=40 400/560 kV/W at 1064/1550 nm 

Noise Equivalent Power at M=40 10/8 nW at 1064/1550 nm 

Low Frequency Cutoff i 30 kHz 

APD Breakdown Voltage, VBR 70 74 80 V @ T = 298 K 

TEC ∆T 40 K @ T = 298 K 

TEC Supply 1.8/1.9 A/V 

Temp Sensing Diode 

Voltage and ∆V/Kii 0.48 

0.50 

-2.18 mV/K 




0.51 V 

TIA Power 25 mA @ 3.3 V 

Output Impedance iii 60 75 90 Ω 

Overload/Saturation Power iv 100 µW 

Maximum Instantaneous 

Input Power v 

5 mW 

Window Thickness 0.76 0.94 1.12 mm 

i - 3 d B , 4 0 µ A i n p u t 

i i S o u r c i n g 1 0 µ A , T = 2 9 8 K 

i i i S i n g l e - e n d e d ; 1 5 0 Ω d i ff e r e n t i a l 

i v 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M=10 

v 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D 

m u l t i p l i c a t i o n g a i n o f M=10 

Receiver Responsivity 

@ 1550 nm [kV/W] 

1 

1 

1 

S i l e t z S e r i e s A P D P h o t o r e c e i v e r 

2 0 0 µ m , 3 5 0 M H z 

M = 10 

M = 40 

1 10 100 1000 10000 

Frequency [MHz] 

3

4 



M o d e l R I P 1 - N J A F 





Bandwidth 1 GHz 


Receiver Responsivity at M=10 i 32/40 kV/W at 1064/1550 nm 


Low Frequency Cutoff ii 65 kHz 


TEC ∆T 40 K @ T = 298 K 



Voltage and ∆V/Kiii 0.48 

0.50 

-2.18 mV/K 




0.51 V 


Output Impedance iv 42.5 50 57.5 Ω 

Overload/Saturation Power v 100 µW 

Max Instantaneous Input Power vi 5 mW 


Window Transparency 95/98% 1064/1550 nm 

i 1 0 M H z , - 4 0 d B m s i g n a l 

i i 1 3 d B , 4 0 µ A i n p u t 

i i i S o u r c i n g 1 0 µ A , T=298K 

i v S i n g l e - e n d e d ; 1 0 0 Ω d i ff e r e n t i a l 

v 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n 

g a i n o f M=10 

v i 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n 

A P D m u l t i p l i c a t i o n g a i n o f M=10 


@1550 nm [kV / W] 

100 

10 


2 0 0 µ m , 1 G H z 

M=10 

M=40 

1 

1 10 100 


1,000 10,000



M o d e l R I P 1 - J J A F 





Bandwidth 2.2 GHz 


Receiver Responsivity at M=40 88/115 kV/W at 1064/1550 nm 


Low Frequency Cutoff i 65 kHz 

APD Breakdown Voltage, VBR ii 70 74 80 V 

TEC ∆T 40 K @ T = 298 K 



Voltage and ∆V/Kiii 0.48 

0.50 

-2.18 mV/K 




0.51 V 


Output Impedance iv 42.5 50 57.5 Ω 

Overload/Saturation Power v 100 µW 

Max Instantaneous Input Power vi 1 mW 



i - 3 d B , 4 0 µ A i n p u t 

i i T=295K 

i i i S o u r c i n g 1 0 µ A , T = 2 9 8 K 

i v S i n g l e - e n d e d ; 1 0 0 Ω d i ff e r e n t i a l 

v 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M=10 

v i 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D 

m u l t i p l i c a t i o n g a i n o f M=10 


@1550 nm [kV/W] 


7 5 µ m , 2 . 2 G H z 

100 

10 

M = 10 

M = 40 

1 

1 10 100 1,000 10,000 


5

6 



M o d e l R 2 P 1 - J C A A 



Spectral Range, λ 950 1000-1600 1750 nm 


Effective Diameter 300 

Bandwidth 1.5 GHz 


Receiver Responsivity @ M=10 i 75/93 kV/W at 1064/1550 nm 

Noise Equivalent Power @ M=40 14/12 nW at 1064/1550 nm 

Low Frequency Cutoff ii 30 kHz 


∆VBR/TEC ∆T 29 K @ T = 298 K 

TIA Power 20 mA@3.3V 

Output Impedance iii 40 50 60 Ω 

Overload/Saturation Power iv 100 µW 

Max Instantaneous Input Power v 1 mW 



i 1 0 M H z , - 4 0 d B m s i g n a l 

i i - 3 d B , 4 0 µ A i n p u t 

i i i S i n g l e - e n d e d ; 1 0 0 Ω d i ff e r e n t i a l 

i v 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M=10 

v 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M=10 

Normalized Response 

1 

0.8 

0.6 

0.4 

0.2 

0 

−400 −300 −200 −100 0 100 200 300 400 

Position [µm] 





7 5 µ m , 1 . 5 G H z , B a l l - L e n s - C o u p l e d T O - 4 6 

Response [V] 

0.8 

0.7 

0.6 

0.5 

0.4 

0.3 

0.2 

0.1 

0 

−0.1 

0 5 10 15 20 25 

Time [ns]



Ordering Informat ion For VFP-10 0 0 S erie s APD Pr oduc t s 

R - P1 - - - - 

Device Type Amplifier Detector Diameter Package Option Lens Option Revision 

R=Photoreceiver 

D=580MHz TIA 

I=2.5GHz TIA 

2=1.7GHz TIA 

P=Siletz 

SCM-APD 

Not all combinations of product features are available. Please contact 

Voxtel for specific ordering information and parts availability. 

C a u t i o n D u r i n g A P D O p e r a t i o n 

If an APD is operated above its breakdown voltage 

without some form of current protection, it can draw 

enough current to permanently damage the device. 

To guard against this, the user can add either a protective 

resistor to the bias circuit or a current-limiting 

circuit in the supporting electronics. 

The breakdown voltage of an APD is dependent 

upon its temperature: the breakdown voltage decreases 

when the APD is cooled. Consequently, a reverse 

bias operating point that is safe at room temperature 

may put the APD into breakdown at low 

temperature. The approximate temperature dependence 

of the breakdown voltage is published in the 

spec sheet for the part, but caution should be exercised 

when an APD is cooled. 

Low-noise readout circuits usually have high impedance, 

and an unusually strong current pulse from 

the APD could generate a momentary excessive volt- 

J=75μm 

N=200μm 




C=TO-46 

J=TO-8 with 

1-Stage TEC 

A=Flat Window 

Q=MM 62.5/125μm 

R=MM 105/125μm 

S=MM 200/125µm 

age that is higher than the readout’s supply voltage, 

possibly damaging the input to the amplifier. To prevent 

this, a protective circuit should be connected 

to divert excessive voltage at the inputs to a power 

supply voltage line. 

As noted in the specification, another consideration 

is that the APD gain changes depending on 

temperature. When an APD is used over a wide temperature 

range, it is necessary to use some kind 

of temperature compensation to obtain operation at 

a stable gain. This can be implemented as either 

regulation of the applied reverse bias according to 

temperature, feedback temperature control using a 

thermoelectric cooler (TEC) or other refrigerator, or 

both. 

Upon request, Voxtel will gladly assist customers 

in implementing the proper controls to ensure safe 

and reliable operation of APDs in their system. 

7

Siletz BSI™ APD Photoreceivers - Voxtel

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