MEMORY DATABOOK - Index of

• EPROM WRITING AND ERASURE •• ----------------2. EPROM HANDLING2.1 Defects caused by static electricityThe generation of static electricity on the EPROMglass face can result in changes in the memory con·tents. This, however, can be restored by brief exposure(several seconds) to ultra·violet radiation. But thisexposure must be kept short. Exposure for 30 secondsor more can cause changes in the normal bits.2.2 Handling precautions(1) Avoid carpets and clothes etc where static electricityis generated.(2) Make sure the programmer and mounting system aresecurely grounded.(3) Also make sure that any soldering iron employed isproperly grounded. .(4) Always carry in an electrically conductive plasti.cmat.(5) Written ROMs are also to be kept in an electricallyconductive plastic mat.(6) Do not touch the glass seal by hand since th is canresult in deterioration of the ultra·violet permeabilityrequired for erasure, and subsequently lead to poorerasure.2.3 System debugging precautionsDuring system debugging, check operations with avoltage of ±5%' (oscillating).40