Losses in single-mode silicon-on-insulator strip waveguides and ...
Losses in single-mode silicon-on-insulator strip waveguides and ...
Losses in single-mode silicon-on-insulator strip waveguides and ...
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6. C<strong>on</strong>clusi<strong>on</strong>• With 445x220nm process,I. Propagati<strong>on</strong> losses as small as 3.6dB/cm were measured.II.Bend<str<strong>on</strong>g>in</str<strong>on</strong>g>g losses is to be below 0.005dB/turn for R=5um.• Further optimizati<strong>on</strong> of the process<str<strong>on</strong>g>in</str<strong>on</strong>g>g by for example 1) oxidati<strong>on</strong>smooth<str<strong>on</strong>g>in</str<strong>on</strong>g>g of the sidewalls <strong>and</strong> 2) optimizati<strong>on</strong> of the bend designmay allow losses to be reduced still further.• Useful as a benchmark for further development of <str<strong>on</strong>g>silic<strong>on</strong></str<strong>on</strong>g>microphot<strong>on</strong>ics comp<strong>on</strong>ents <strong>and</strong> circuit <strong>on</strong> SOI platform(phot<strong>on</strong>iccrystals, arrayed waveguide grat<str<strong>on</strong>g>in</str<strong>on</strong>g>g, r<str<strong>on</strong>g>in</str<strong>on</strong>g>g res<strong>on</strong>ators)13
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