Losses in single-mode silicon-on-insulator strip waveguides and ...

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4. Propagation <strong>Losses</strong>Strongerscatter<strong>in</strong>g• Propagation losses measurements2 2 2σ kh0Eα = ⋅ S∆n2β E dxTM <strong>mode</strong>∫2TM <strong>mode</strong><strong>Losses</strong> is proportional toSquare of Interface roughness(σ)and Normalized E.Near the cut-offfrequency∇ E( y) + ( k( y) − β ) E( y) = 0k2 2 2xyy2 2= ( nk ) − β1 0TE <strong>mode</strong>TE <strong>mode</strong>“Stronger scatter<strong>in</strong>g of the <strong>mode</strong> as the roughness amplitudeis <strong>in</strong>creased relative to the wavelength.”8
4. Propagation <strong>Losses</strong>• 1300nm wavelength Loss SpectrumTMTE• The TE <strong>mode</strong> profile is characterized by much higher E field <strong>in</strong>tensityat the sidewall and correspond<strong>in</strong>gly higher propagation losses.• The TM <strong>mode</strong> has a relatively small amplitude at the sidewalls, butmuch higher at the top and bottom <strong>in</strong>terfaces.But! This research did not optimizethe surface roughness(σ)!!9
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Page 6 and 7: 3. Experimental DesignThis 445 x 22
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Losses in single-mode silicon-on-insulator strip waveguides and ...

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