SUM110N04-2m7H N-Channel 40-V (D-S) 175_C MOSFET
SUM110N04-2m7H N-Channel 40-V (D-S) 175_C MOSFET
SUM110N04-2m7H N-Channel 40-V (D-S) 175_C MOSFET
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<strong>SUM110N04</strong>-<strong>2m7H</strong>Vishay SiliconixTHERMAL RATINGS300Maximum Avalanche and Drain Currentvs. Case Temperature1000Safe Operating Area a250*Limited by r DS(on)10 s100100 s− Drain Current (A)200150100− Drain Current (A)101 ms10 msdc, 100 msI D50Limited By PackageI D1T C = 25CSingle Pulse00 25 50 75 100 125 150 <strong>175</strong>T C − Case Temperature (C)0.10.1 1 10 100V DS − Drain-to-Source Voltage (V)*V GS minimum V GS at which r DS(on) is specified2Normalized Thermal Transient Impedance, Junction-to-CaseNormalized Effective TransientThermal Impedance10.1Duty Cycle = 0.50.20.050.02Single Pulse0.10.0110 −4 10 −3 10 −2 10 −1Square Wave Pulse Duration (sec)1Notesa. V GS minimum V GS at which r DS(on) iis specified.Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology andPackage Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, seehttp://www.vishay.com/ppg?72927.Document Number: 72927S-42058—Rev. B, 15-Nov-04www.vishay.com5
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