Novel Nano Novel Nano-Engineered Semiconductors for ... - Caltech

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2.3. Strained silicon nano-pillars(Axel Scherer’s group)When small silicon pillars areoxidized, the silicon lattice expandsby approximately 40%, whichleaves the adjacent un-oxidizedsilicon under tremendous tensilestrain. In nanowires, this strain canincrease to the point where thesilicon oxidation process is selflimited,leaving stable 2 ~ 10 nmwide tensile-strained silicon coreswithin a silicon dioxide shells.The nano-pillar diameter is controlledby the oxidization temperature. t
Atomically resolved imaging & spectroscopy usingscanning tunneling microscopy (STM)STM operation is based on:1) Quantum tunneling of electrons-- Tunneling current (I) depends stronglyon the surface work function ( ), theseparation (s) and the biased voltage(V) between the tip & sample.2) Piezoelectric control-- Enables atomic scale resolution <strong>for</strong>surface topography and lateral scanningcapabilities.iTwo primary modes of operation:1) Three-dimensional imaging-- Under feedback control, the “constantcurrent map”.2) Spectroscopy-- Fixed location differential conductance(dI/dV)-vs.-V map, under constant .Tunnelingcurrent (I)Two mode ofoperation:1) imaging,2) spectroscopy.NbSe 2Electronstunnelacrossvacuum
Page 1 and 2: Novel Nano-Engineered Semiconductor
Page 3 and 4: 1. Nanotechnology & nanomaterials--
Page 5 and 6: 1. Nanotechnology & nanomaterials2.
Page 7 and 8: Polarization-sensitive & spatially
Page 9: • Formation of NWs by selective e
Page 13 and 14: Making a transistor out of a strain
Page 15 and 16: 1. Nanotechnology & nanomaterials2.
Page 17 and 18: 3.2. Physics of grapheneElectronic
Page 20: Challenges & Current Research DIrec
Page 23 and 24: STM calibration on graphite• We t
Page 25 and 26: STM studies of graphene on SiO 2•
Page 27 and 28: Strain-induced induced modification
Page 29 and 30: Strain-induced induced structural &
Page 31 and 32: 3.4. Potential applications to ligh

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