Novel Nano Novel Nano-Engineered Semiconductors for ... - Caltech

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Challenges & Current Research DIrections• Large-scale & high-quality production MBE or CVD growth.• Device and bandgap engineering graphane (i.e. hydrogenated graphene) nanoribbons atomic switches local strainGraphane(0 ~ 3.5 eV)Graphene is a semi-metal,or zero-gap semiconductor.How does one engineer anenergy gap in graphenebasedsystems?• <strong>Novel</strong> devices ballistic transistors supercollimators & electronic lensing Schottky diodes & light emitting diodes photodectorsGraphene nanoribbon( 0 ~ 200 meV)
Page 1 and 2: Novel Nano-Engineered Semiconductor
Page 3 and 4: 1. Nanotechnology & nanomaterials--
Page 5 and 6: 1. Nanotechnology & nanomaterials2.
Page 7 and 8: Polarization-sensitive & spatially
Page 9 and 10: • Formation of NWs by selective e
Page 11 and 12: Atomically resolved imaging & spect
Page 13 and 14: Making a transistor out of a strain
Page 15 and 16: 1. Nanotechnology & nanomaterials2.
Page 17 and 18: 3.2. Physics of grapheneElectronic
Page 22 and 23: • Strain-induced induced modifica
Page 24 and 25: STM studies of graphene on SiO 2•
Page 26 and 27: Strained-induced induced conductanc
Page 28 and 29: The out-of-plane phonon frequencies
Page 30 and 31: Modifications to electronic propert
Page 32: Summary• Novel nanostructures suc

Novel Nano Novel Nano-Engineered Semiconductors for ... - Caltech

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