3.3V IO ESD protection - Sofics
3.3V IO ESD protection - Sofics
3.3V IO ESD protection - Sofics
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Data sheet: Low leakage <strong>3.3V</strong> clamp for TSMC 65nm CMOS technology<strong>ESD</strong> clamp for <strong>3.3V</strong> interfacesClamp type and usageThe <strong>Sofics</strong> <strong>ESD</strong> cells cover all types of <strong>protection</strong> concepts and approaches as detailed in the figure below. The <strong>ESD</strong>clamp cell described in this document is a type C clamp.The <strong>ESD</strong> cell can be used for the <strong>protection</strong> of all kinds of <strong>3.3V</strong> interfaces.Protection <strong>3.3V</strong> CommentsCore ProtectionInput ProtectionOutput Protection<strong>IO</strong> ProtectionOver Voltage Tolerant <strong>IO</strong> (OVT)Under Voltage Tolerant <strong>IO</strong> (UVT)Inter Domain ProtectionFeatures Efficient <strong>ESD</strong> <strong>protection</strong>o > 2 kV Human Body Model (HBM)o > 200 V Machine Model (MM) Integrated power clamp Low leakage < 0.1 nA measured at 3.63 V Low junction capacitance of 109fF Silicon footprint < 3300um²<strong>Sofics</strong> Proprietary – ©2012 Page 2
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