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Magnetic field sensor

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Philips SemiconductorsProduct specification<strong>Magnetic</strong> <strong>field</strong> <strong>sensor</strong>KMZ10A1DESCRIPTIONThe KMZ10A1 is an extremely sensitive magnetic <strong>field</strong><strong>sensor</strong>, employing the magnetoresistive effect of thin-filmpermalloy. Its properties enable this <strong>sensor</strong> to be used in awide range of applications such as navigation, current andearth magnetic <strong>field</strong> measurement etc. The specialarrangement of the sensing chip allows the construction ofcoils for switching the auxiliary <strong>field</strong> (H x ) along the lengthaxis of the <strong>sensor</strong>. The <strong>sensor</strong> can be operated at anyfrequency between DC and 1 MHz.Hhandbook, halfpage yH xPINNING1 2 3 4MGL420PIN SYMBOL DESCRIPTION1 +V O output voltage2 GND ground3 −V O output voltage4 V CC supply voltageFig.1 Simplified outline.QUICK REFERENCE DATASYMBOL PARAMETER MIN. TYP. MAX. UNITV CC DC supply voltage − 5 − VH y magnetic <strong>field</strong> strength −0.5 − +0.5 kA/mH x auxiliary <strong>field</strong> − 0.5 − kA/mS sensitivity − 14 −mV ⁄ V----------------kA ⁄ mS s sensitivity (with switched H x ) − 22 −mV ⁄ V----------------kA ⁄ mR bridge bridge resistance 0.85 − 1.75 kΩV offset offset voltage −1.5 − +1.5 mV/VCIRCUIT DIAGRAMhandbook, full pagewidthMLC7161234+V O GND –V OV CCFig.2 Simplified circuit diagram.1998 Apr 06 2

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