CNY75(G) Series Optocoupler with Phototransistor Output

Optocoupler with Phototransistor OutputDescriptionThe CNY75(G) series consists of a phototransistoroptically coupled to a gallium arsenide infraredemittingdiode in a 6-lead plastic dual inline package.The elements are mounted on one leadframe usinga coplanar technique, providing a fixed distancebetween input and output for highest safetyrequirements.CNY75(G) SeriesVishay TelefunkenApplicationsCircuits for safe protective separation againstelectrical shock according to safety class II(reinforced isolation):14827 For appl. class I – IV at mains voltage ≤ 300 V For appl. class I – III at mains voltage ≤ 600 Vaccording to VDE 0884, table 2, suitable for:Switch-mode power supplies, line receiver, computerperipheral interface, microprocessorsystem interface.VDE StandardsThese couplers perform safety functions accordingto the following equipment standards: VDE 0884Optocoupler for electrical safety requirements IEC 950/EN 60950Office machines (applied for reinforced isolationfor mains voltage ≤ 400 V RMS ) VDE 0804Telecommunication apparatus and dataprocessing IEC 65Safety for mains-operated electronic and relatedhousehold apparatusOrder InstructionB C E6 5 41 2 3A (+) C (–) n.c.95 10805Ordering Code CTR Ranking RemarksCNY75A/ CNY75GA 1) 63 to 125%CNY75B/ CNY75GB 1) 100 to 200%CNY75C/ CNY75GC 1) 160 to 320%1) G = Leadform 10.16 mm; G is not market on the bodyRev. A4, 11–Jan–99 141

CNY75(G) SeriesVishay TelefunkenFeaturesApprovals: BSI: BS EN 41003, BS EN 60095 (BS 415),BS EN 60950 (BS 7002),Certificate number 7081 and 7402 FIMKO (SETI): EN 60950,Certificate number 12399 Underwriters Laboratory (UL) 1577 recognized,file number E-76222 VDE 0884, Certificate number 94778VDE 0884 related features: Rated impulse voltage (transient overvoltage)V IOTM = 6 kV peak Isolation test voltage(partial discharge test voltage) V pd = 1.6 kV Rated isolation voltage (RMS includes DC)V IOWM = 600 V RMS (848 V peak) Rated recurring peak voltage (repetitive)V IORM = 600 V RMS Creepage current resistance according toVDE 0303/IEC 112Comparative Tracking Index: CTI = 275 Thickness through insulation ≥ 0.75 mmGeneral features: Isolation materials according to UL94-VO Pollution degree 2(DIN/VDE 0110 part 1 resp. IEC 664) Climatic classification 55/100/21 (IEC 68 part 1) Special construction:Therefore, extra low coupling capacity oftypical 0.3 pF, high Common Mode Rejection Low temperature coefficient of CTR CTR offered in 3 groups Coupling System AAbsolute Maximum RatingsInput (Emitter)Parameter Test Conditions Symbol Value UnitReverse voltage V R 5 VForward current I F 60 mAForward surge current t p ≤ 10 s I FSM 3 APower dissipation T amb ≤ 25C P V 100 mWJunction temperature T j 125 COutput (Detector)Parameter Test Conditions Symbol Value UnitCollector base voltage V CBO 90 VCollector emitter voltage V CEO 90 VEmitter collector voltage V ECO 7 VCollector current I C 50 mACollector peak current t p /T = 0.5, t p ≤ 10 ms I CM 100 mAPower dissipation T amb ≤ 25C P V 150 mWJunction temperature T j 125 CCouplerParameter Test Conditions Symbol Value UnitAC isolation test voltage (RMS) t = 1 min V IO 3.75 kVTotal power dissipation T amb ≤ 25C P tot 250 mWAmbient temperature range T amb –55 to +100 CStorage temperature range T stg –55 to +125 CSoldering temperature 2 mm from case, t ≤ 10 s T sd 260 C142Rev. A4, 11–Jan–99

CNY75(G) SeriesVishay TelefunkenElectrical Characteristics (T amb = 25°C)Input (Emitter)Parameter Test Conditions Symbol Min. Typ. Max. UnitForward voltage I F = 50 mA V F 1.25 1.6 VReverse current V R = 6 V I R 10 AJunction capacitance V R = 0, f = 1 MHz C j 50 pFOutput (Detector)Parameter Test Conditions Symbol Min. Typ. Max. UnitCollector base voltage I C = 100 A V CBO 90 VCollector emitter voltage I C = 1 mA V CEO 90 VEmitter collector voltage I E = 100 A V ECO 7 VCollector emitter cut-offcurrentV CE = 20 V, I F = 0 I CEO 150 nACouplerParameter Test Conditions Symbol Min. Typ. Max. UnitCollector emitter I F = 10 mA, I C = 1 mA V CEsat 0.3 Vsaturation voltageCut-off frequency V CE = 5 V, I F = 10 mA, f c 110 kHzR L = 100 Coupling capacitance f = 1 MHz C k 0.3 pFCurrent Transfer Ratio (CTR)Parameter Test Conditions Type Symbol Min. Typ. Max. UnitI C/IF V CE = 5 V, I F = 1 mA CNY75(G)A CTR 0.15CNY75(G)B CTR 0.3CNY75(G)C CTR 0.6V CE = 5 V, I F = 10 mA CNY75(G)A CTR 0.63 1.25CNY75(G)B CTR 1 2CNY75(G)C CTR 1.6 3.2Rev. A4, 11–Jan–99 143

CNY75(G) SeriesVishay TelefunkenMaximum Safety Ratings (according to VDE 0884) see figure 1This device is used for protective separation against electrical shock only within the maximum safety ratings.This must be ensured by using protective circuits in the applications.Input (Emitter)Parameters Test Conditions Symbol Value UnitForward current I si 130 mAOutput (Detector)Parameters Test Conditions Symbol Value UnitPower dissipation T amb ≤ 25C P si 265 mWCouplerParameters Test Conditions Symbol Value UnitRated impulse voltage V IOTM 6 kVSafety temperature T si 150 CInsulation Rated Parameters (according to VDE 0884)Parameter Test Conditions Symbol Min. Typ. Max. UnitPartial discharge test voltage – 100%, t test = 1 s V pd 1.6 kVRoutine testPartial discharge test voltage – t Tr = 60 s, t test = 10 s, V IOTM 6 kVLot test (sample test)(see figure 2) V pd 1.3 kVInsulation resistance V IO = 500 V R IO 10 12 V IO = 500 V,R IO 10 11 T amb ≤ 100CV IO = 500 V,T amb ≤ 150CR IO 10 9 (construction test only)P tot – Total Power Dissipation ( mW )95 10923275250225200175150125100755025I si (mA)P si(mW)00 25 50 75 100 125 150 175T amb – Ambient Temperature ( °C)Figure 1. Derating diagramVV IOTMV PdV IOWMV IORM139300t 1t 1, t 2= 1 to 10 st 3, t 4= 1 st test= 10 st stres= 12 st Tr= 60 st 2t 4t 3t testt stresFigure 2. Test pulse diagram for sample test according toDIN VDE 0884t144Rev. A4, 11–Jan–99

CNY75(G) SeriesVishay TelefunkenSwitching Characteristics of CNY75(G(AParameter Test Conditions Symbol Typ. UnitDelay time V S = 5 V, I C = 10 mA, R L = 100 (see figure 3) t d 2.0 sRise timet r 2.5 sFall time t f 2.7 sStorage time t s 0.3 sTurn-on time t on 4.5 sTurn-off time t off 3.0 sTurn-on time V S = 5 V, I F = 10 mA, RL = 1 k (see figure 4) t on 10.0 sTurn-off timet off 25.0 sSwitching Characteristics of CNY75(G)BParameter Test Conditions Symbol Typ. UnitDelay time V S = 5 V, I C = 10 mA, R L = 100 (see figure 3) t d 2.5 sRise timet r 3.0 sFall time t f 3.7 sStorage time t s 0.3 sTurn-on time t on 5.5 sTurn-off time t off 4.0 sTurn-on time V S = 5 V, I F = 10 mA, RL = 1 k (see figure 4) t on 16.5 sTurn-off timet off 20 sSwitching Characteristics of CNY75(G)CParameter Test Conditions Symbol Typ. UnitDelay time V S = 5 V, I C = 10 mA, R L = 100 (see figure 3) t d 2.8 sRise timet r 4.2 sFall time t f 4.7 sStorage time t s 0.3 sTurn-on time t on 7.0 sTurn-off time t off 5.0 sTurn-on time V S = 5 V, I F = 10 mA, RL = 1 k (see figure 4) t on 11 sTurn-off timet off 37.5 sRev. A4, 11–Jan–99 145

CNY75(G) SeriesVishay Telefunken0I FR G= 50 t pT = 0.01t p= 50 s95 10891I F50 100 + 5 VI C= 10 mA ; Adjusted throughinput amplitudeChannel IChannel IIOscilloscopeR L 1 MC L 20 pFFigure 3. Test circuit, non-saturated operation100%90%96 11698I F0tt pI CI F0R = 50 GI F+ 5 VI C10%0t rt dt ont s t ftt pT = 0.01t = 50 s pt off14944501 k Channel IChannel IIOscilloscopeR L 1 M C L 20 pFpulse dura-delay timerise timeturn-on timet ptiont dt rt on (= t d + t r )t st ft off (= t s + t f )storage timefall timeturn-off timeFigure 4. Test circuit, saturated operationFigure 5. Switching timesTypical Characteristics (T amb = 25 C, unless otherwise specified)P tot – Total Power Dissipation ( mW )30025020015010096 1170050Coupled devicePhototransistorIR-diode00 40 80 120T amb – Ambient Temperature (°C )Figure 6. Total Power Dissipation vs.Ambient TemperatureI F – Forward Current ( mA )1000.0100.010.096 118621.00.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0V F – Forward Voltage ( V )Figure 7. Forward Current vs. Forward Voltage146Rev. A4, 11–Jan–99

CNY75(G) SeriesVishay TelefunkenCTR rel – Relative Current Transfer Ratio1.51.41.31.21.11.00.90.80.70.6V CE =5VI F =10mA0.5–30 –20 –10 0 10 20 30 40 50 60 70 8096 11918 T amb – Ambient Temperature ( °C)Figure 8. Relative Current Transfer Ratio vs.Ambient TemperatureI C – Collector Current ( mA )95 110401001010.1V CE =5V0.010.1 1 10I F – Forward Current ( mA )100Figure 11. Collector Current vs. Forward CurrentI CEO – Collector Dark Current,with open Base ( nA )1000095 11038100010010V CE =30VI F =010 25 50 75T amb – Ambient Temperature ( °C )Figure 9. Collector Dark Current vs.Ambient Temperature100I C – Collector Current ( mA )95 11041100101CNY75A0.10.1 1 10I F =50mA20mA10mAV CE – Collector Emitter Voltage ( V )5mA2mA1mA100Figure 12. Collector Current vs. Collector Emitter VoltageI CB – Collector Base Current ( mA )10.10.010.0011 1095 11039V CB =5VI F – Forward Current ( mA )100Figure 10. Collector Base Current vs. Forward CurrentI C – Collector Current ( mA )95 11042100101I F =50mACNY75B0.10.1 1 1020mA10mA5mA2mA1mAV CE – Collector Emitter Voltage ( V )100Figure 13. Collector Current vs. Collector Emitter VoltageRev. A4, 11–Jan–99 147

CNY75(G) SeriesVishay TelefunkenI C – Collector Current ( mA )100.010.01.0I F =50mA20mA10mA5mA2mA1mACNY750.1C0.1 1.0 10.0 100.096 11919 V CE – Collector Emitter Voltage ( V)Figure 14. Collector Current vs. Collector Emitter VoltageV CEsat – Collector Emitter Saturation Voltage ( V )95 110341.00.80.60.40.210%01 10CTR=50%20%CNY75AI C – Collector Current ( mA )100Figure 15. Coll. Emitter Sat. Voltage vs. Coll. CurrentV CEsat – Collector Emitter Saturation Voltage ( V )95 110431.00.80.60.40.2CNY75BCTR=50%01 1010%20%I C – Collector Current ( mA )100Figure 16. Coll. Emitter Sat. Voltage vs. Coll. CurrentV CEsat – Collector Emitter Saturation Voltage ( V )95 110441.00.80.60.40.2CNY75C10%01 10CTR=50%20%I C – Collector Current ( mA )100Figure 17. Coll. Emitter Sat. Voltage vs. Coll. Currenth FE – DC Current Gain95 11035CTR – Current Transfer Ratio ( % )1000800600400200V CE =5V00.01 0.1 1 10I C – Collector Current ( mA )100Figure 18. DC Current Gain vs. Collector Current100010010CNY75A(G)V CE =5V10.1 1 1010095 11036I F – Forward Current ( mA )Figure 19. Current Transfer Ratio vs. Forward Current148Rev. A4, 11–Jan–99

CNY75(G) SeriesVishay TelefunkenCTR – Current Transfer Ratio ( % )95 11045100010010CNY75B(G)V CE =5V10.1 1 10I F – Forward Current ( mA )100Figure 20. Current Transfer Ratio vs. Forward Currentt on / t off – Turn on / Turn off Time ( s )95 110485040302010CNY75B(G)Saturated OperationV S =5VR L =1k00 5 10 15I F – Forward Current ( mA )Figure 23. Turn on / off Time vs. Forward Currentt offt on20CTR – Current Transfer Ratio ( % )100010010CNY75C(G)V CE =5V10.1 1 1010095 11046I F – Forward Current ( mA )Figure 21. Current Transfer Ratio vs. Forward Currentt on / t off – Turn on / Turn off Time ( s )95 110505040302010CNY75C(G)Saturated OperationV S =5VR L =1k00 5 10 15I F – Forward Current ( mA )Figure 24. Turn on / off Time vs. Forward Currentt offt on20t on / t off – Turn on / Turn off Time ( s )5040302010CNY75A(G)Saturated OperationV S =5VR L =1k00 5 10 1595 11033I F – Forward Current ( mA )Figure 22. Turn on / off Time vs. Forward Currentt offt on20t on / t off – Turn on / Turn off Time ( s )2015105t ont offCNY75A(G)Non SaturatedOperationV S =5VR L =10000 2 4 6 895 11032I C – Collector Current ( mA )Figure 25. Turn on / off Time vs. Collector Current10Rev. A4, 11–Jan–99 149

CNY75(G) SeriesVishay Telefunkent on / t off – Turn on / Turn off Time ( s )2015105CNY75B(G)Non SaturatedOperationV S =5VR L =10000 2 4 6 895 11047I C – Collector Current ( mA )Figure 26. Turn on / off Time vs. Collector Currentt ont off10t on / t off – Turn on / Turn off Time ( s )2015105t ont offCNY75C(G)Non SaturatedOperationV S =5VR L =10000 2 4 6 895 11049I C – Collector Current ( mA )Figure 27. Turn on / off Time vs. Collector Current10TypeDateCode(YM)XXXXXX918 A TK 630884VD EProductionLocationSafetyLogo15090CouplingCompanySystemLogoIndicatorFigure 28. Marking example150Rev. A4, 11–Jan–99

CNY75(G) SeriesVishay TelefunkenDimensions of CNY75G in mmweight: ca. 0.50 gcreepage distance:air path: 8 mm 8 mmafter mounting on PC board14771Dimensions of CNY75 in mmweight: 0.50 gcreepage distance:air path: 6 mm 6 mmafter mounting on PC board14770Rev. A4, 11–Jan–99 151