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고속스위칭 전력반도체 제조기술• 빔조사전Au/Ni : 260nm/240nmAT rr =240nsec9E20/cm 3p+55 μm055p+FRD (V br=400V)2.5E14/cm 31E21/cm 3nn+145 μm55 μm200nn+R p: at Junctionat depletion regionat neutral region255• 빔조사후T rr 1/5K[μm]T rr =50nsec2.97MeV, 1E+13/cm244
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