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Post-Doctoral Position in Quantum Transport Modeling of ... - IEMN

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[5] M. Bescond, M. Lannoo, L. Raymond and F. Michel<strong>in</strong>i, “S<strong>in</strong>gle donor <strong>in</strong>duced negativedifferential resistance <strong>in</strong> silicon n-type nanowire Metal-Oxide-Semiconductor transistors,” J.Appl. Phys. 107, 093703 (2010).Contact:To apply, send an application address<strong>in</strong>g the selection criteria, <strong>in</strong>clud<strong>in</strong>g a CV with a list <strong>of</strong>publications, and names, addresses and emails <strong>of</strong> two confidential Referees to (applicationdeadl<strong>in</strong>e 31 th <strong>of</strong> January 2013):Dr. Marc BescondAddress: IM2NP, Bât. IRPHE - 49, rue Joliot Curie - BP 146Technopôle de Château-Gombert - 13384 Marseille Cedex 13, FranceE-mail: marc.bescond@im2np.fr

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