Overview of spectroscopies I (MC) - TDDFT.org

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Fermi Surface of diamond and electron-phonon processes relevant forDSUPERCONDUCTIVITY●2e-pDe-pHeavyholesN DMd ; 1/2 =(0.55d 0 /a 0 )eV /Ǻ0Diamond : d 0= 85eV; Silicon d 0= 35eVSpin split holesLight holes85 2 370meV( ) 5.9; ( ) 6.135 60meVGap RenormalizationsWith these values of d 0one obtains T c=5.2K for diamond with 2x10 21 holes/cm 31.2% Boron; Basically T c≈ 0 for silicon (for μ* = 0) Cardona SSC 133 (2005) 3.Boeri et al. PRL 93,237002(2004): T c= 0.2K (for μ* = 0.1) for 3% BLee and Pickett PRL 92, 237003(2004): T c= 7K (for μ* = 0.15) for 2.5% BXiang et al., cond:mat/0406446 v3 T c= 4.4 K (for μ* = 0.15) for 2.8% B20
Recent calculations:Giustino, Yates, Souza,Cohen, Louie U.C. BerkeleyPRL 98, 047005 (2007)Use millions of points in k-space and either C-B virtual crystalor a supercell with boron in the center. Include boron vibrationsFind for N h ~ 2x10 21 cm -3 T c = 4K21
Page 1 and 2: Manuel Cardona, Max-Planck- Institu
Page 3 and 4: Benedict, Shirley, Bohn, PRB 57, R9
Page 5 and 6: Albrecht et al. PRL 80.4510(1998)Ca
Page 7 and 8: Comparison of calculated with measu
Page 9 and 10: Three electron-phonon interaction t
Page 11: A single crystal of 29 Si (5% natur
Page 14 and 15: 2.9meVParks et al. PRB49,14244(1994
Page 16 and 17: 7.37.27.4ΔE = 0.7 eVClassical mole
Page 18 and 19: Although no isotope effect measurem
Page 22 and 23: Why is the electron-phonon interact
Page 24 and 25: 2.9meVParks et al. PRB49,14244(1994
Page 26 and 27: Superconductivity in boron-doped si
Page 28 and 29: Specific heat of diamond vs.T: Eins
Page 30 and 31: Luis Viňa (Stuttgart, 1981)Patrici
Page 32 and 33: Contribution of zinc and oxygen to
Page 34 and 35: Periodic Table ( Section)Mg Al Si P
Page 36 and 37: Sharp indirect edge luminescence in
Page 38 and 39: DIAMONDT. Sato et al. PRB 65, 09210
Page 40 and 41: 90 meV, confirmed by isotope measur

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