SENSITIVE GATE SCR
SENSITIVE GATE SCR
SENSITIVE GATE SCR
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FS04...H<strong>SENSITIVE</strong> <strong>GATE</strong> <strong>SCR</strong>TO-220-ABOn-State Current4 AmpGate Trigger Current< 200 µAOff-State Voltage200 V ÷ 800 VK A GThese series of Silicon ControlledRectifier use a high performancePNPN technology.These parts are intended for generalpurpose applications where high gatesensitivity is required.Absolute Maximum Ratings, according to IEC publication No. 134SYMBOLPARAMETER CONDITIONS Value UnitI T(RMS)I T(AV)I TSMI TSMI 2 tI GMP GMP G(AV)T jT stgT sldOn-state CurrentAverage On-state CurrentNon-repetitive On-State CurrentNon-repetitive On-State CurrentFusing CurrentPeak Gate CurrentPeak Gate DissipationGate DissipationOperating TemperatureStorage TemperatureSoldering Temperature180º Conduction Angle, T C = 110 ºCHalf Cycle, Q = 180 º, T C = 110 ºCHalf Cycle, 60 HzHalf Cycle, 50 Hzt p = 10ms, Half Cycle20 µs max.20 µs max.20ms max.10s max.42.533304.5450.5(-40 to +150)(-40 to +150)260AAAAA 2 sAWWºCºCºCR GK = 1 kW VSYMBOLPARAMETER CONDITIONS VOLTAGE UnitV DRM Repetitive Peak Off StateB200D400M600S700N800V RRM VoltageJun - 11
FS04...H<strong>SENSITIVE</strong> <strong>GATE</strong> <strong>SCR</strong>Electrical CharacteristicsSYMBOLPARAMETER CONDITIONS SENSITIVITY UnitV D = 12 V DC , R L = 140W. T j = 25 °CI GT Gate Trigger CurrentMIN 1 0 15I DRM / I RRM Off-State Leakage Current V D = V DRM , R GK = 1kW T j = 125 °C MAX1mAMAX 20 200 50 µ AV GT Gate Trigger Voltage V D = 12 V DC , R L = 140W, T j = 25 °C MAX0.8VV GD Gate Non Trigger Voltage V D = V DRM , R L = 3.3kW, R GK = 220W MIN0.1VT j = 125 °CV RGM Reverse Gate Voltage I RG = 10µA,MIN8VI H Holding CurrentI T = 500 mA,MAX 5mAI L Latching Current I G = 1.2 I GT MAX6mAdV / dt Critical Rate of Voltage Rise V D = 0.67 x V DRM , R GK =1 kW, MIN 10 5 15 V/µsT j = 125 °CdI / dt Critical Rate of Current Rise I G = 2 x I GT tr £ 100 ns, f = 60 Hz, MIN50A/µsT j = 125 °CV TM On-state Voltageat I T = 8 Amp, tp = 380 µs, T j = 25 °C MAX1.6 VV t (0) Threshold Voltage T j = 125 °CMAX 0.85 Vr d Dynamic resistance T j = 125 °CMAX 46 mWV R = V RRM ,T j = 25 °C MAX5µAR th(j-c)Thermal ResistanceJunction-Amb for DCfor AC 360° conduction angle01022.004ºC/WR th(j-a)Thermal ResistanceJunction-Amb for DCS = 1cm 260°C/WPART NUMBER INFORMATIONF S 04 02 B H 00TUFAGOR<strong>SCR</strong>CURRENTPACKAGINGFORMINGCASEVOLTAGESENSITIVITYJun - 11
FS04...H<strong>SENSITIVE</strong> <strong>GATE</strong> <strong>SCR</strong>Fig. 1: Maximum average power dissipationversus average on-state current.Fig. 2: Average and D.C. on-state currentversus case temperature.P (W)55I T(av) (A)44D.C.3232a = 180 º1360 º100 1 2 3 4 5 6 7aI T(av) (A)00 25 50 75 100 125T case (ºC)Fig. 3: Relative variation of thermal impedancejunction to case versus pulse duration.K = [Z th(j-c) / R th (j-c) ]1.00.50.20.1tp (s)1E+0Fig. 5: Relative variation of holding currentversus gate-cathode resistance (typicalvalues).Fig. 4: Relative variation of gate triggercurrent, holding and latching currentversus junction temperature.I GT , I H (T j ) / I GT , I H (T j = 25 ºC)2.01.81.6 I GT1.41.2I H & I1.0 L0.80.60.40.20.0T j (ºC)-40 -20 0 20 40 60 80 100 120 140Fig. 6: Relative variation of dV/dt immunityversus gate-cathode resistance (typical values).5I H [R GK ] / I H [R GK = 1kW] dV/dt [R GK ] / dV/dt [R GK = 220W]10.00T j = 25 °CT j = 125 °CVD = 0.67xV DRM431.0020.101R GK = (kW)01E-2 1E-1 1E+0 1E-1R GK = (kW)0.010 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0Jun - 11
FS04...H<strong>SENSITIVE</strong> <strong>GATE</strong> <strong>SCR</strong>Fig. 7: Relative variation of dV/dt immunityversus gate-cathode resistance (typicalvalues).dV/dt [Cgk] / dV/dt [RGK = 220W]I TSM (A)1010 40VD = 0.67 x V DRMT j = 125 ºC35R GK = 220W830Fig. 8: Non repetitive surge peak on-statecurrent versus number of cycles.642Cgk(nF)00 2 4 6 8 10 12 14 16 18 20 22252015105Number of0cycles1 10 100 1000Fig. 9: Non repetitive surge peak on-statecurrent for a sinusoidal pulse with width:tp < 10 ms, and corresponding value of I 2 t.3010I TSM (A). I 2 t (A 2 s)50I TSM T j initial = 25 ºCFig. 10: On-state characteristics (maximumvalues).10I TM (A)T j maxV T(O) = 0.85 Vr d = 90mWT j =T j max5I 2 t1T j 25 ºC21tp(ms)1 2 5 100.10 0.5 1 1.5 2 2.5 3 3.5 4V TM (V)Jun - 11
FS04...H<strong>SENSITIVE</strong> <strong>GATE</strong> <strong>SCR</strong>PACKAGE MECHANICAL DATATO-220ABDøPQD1b2beEe1L1LA1A2ACH1REF.AA1A2bb2cDD1Eee1H1LL1PQDIMENSIONSMilimetersMin. Max.4.471.172.520.711.170.3114.658.5010.012.514.986.1513.403.563.7352.594.671.372.820.911.370.5315.358.9010.362.575.186.4513.963.963.9352.89Mounting Torque1 N.m(*) Limiting values and life support applications, see Web page.Jun - 11
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