Bibliography for Modelbooks - NXP Semiconductors

March 2006 Bibliography
B Bibliography
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[1] R. S. Muller and T. I. Kamins, Device electronics for integrated circuits. Wiley,
New York, 2nd ed., 1986.
[2] S.M. Sze, Physics of Semiconductor Devices. Wiley, New York, 2 ed., 1981.
[3] P. A. H. Hart, Bipolar and bipolar-mos integration. Elsevier, Amsterdam, 1994.
[4] H. C. de Graaff and F.M. Klaassen, Compact transistor modelling for circuit
design. Springer-Verlag, Wien, 1990.
[5] J. Lindmayer and C. Y. Wrigley, Fundamentals of semiconductor devices. Van
Nostrand, Princeton, 1965.
[6] I. E. Getreu, Modeling the bipolar transistor. Elsevier Sc. Publ. Comp., Amsterdam,
1978.
[7] A. van der Ziel, Noise. Sources, characterization, measurement. Prentice- Hall,
Englewood Cliffs, 1970.
[8] J. Berkner, Kompaktmodelle f¨ur Bipolartransistoren. Praxis der Modellierung,
Messung und Parameterbestimmung — SGP, VBIC, HICUM und MEXTRAM
(Compact models for bipolar transistors. Practice of modelling, measurement and
parameter extraction — SGP, VBIC, HICUM und MEXTRAM). Expert Verlag, Renningen,
2002. (In German).
[9] M. Reisch, High-Frequency Bipolar Transistors. Springer, Berlin, 2003.
[10] G. A. M. Hurkx, H. C. de Graaff, W. J. Kloosterman, and M. P. G. Knuvers, A
new analytical diode model including tunneling and avalanche breakdown, IEEE
Trans. Elec. Dev., vol. 39, pp. 2090–2098, 1992.
[11] J. J. Ebers and J. L. Moll, Large signal behaviour of junction transistors, Proc.
IRE, vol. 42, p. 1761, 1954.
[12] H. K. Gummel and H. C. Poon, An integral charge control model of bipolar
transistors,” Bell Sys. Techn. J., vol. May-June, pp. 827–852, 1970.
[13] J. L. Moll and I. M. Ross, The dependence of transistor parameters on the distribution
of base layer resistivity, Proc. IRE, vol. 44, pp. 72–78, Jan. 1956.
[14] H. K. Gummel, A charge control relation for bipolar transistors, Bell Sys.
Techn. J., vol. January, pp. 115–120, 1970.
[15] F. G. O’Hara, J. J. H. van den Biesen, H. C. de Graaff, and J. B. Foley, A new
physical compact model for lateral PNP transistors, in Proc. of the Bipolar Circuits
and Technology Meeting, pp. 102–105, 1990.
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March 2006 Bibliography
[16] F. G. O’Hara, J. J. H. van den Biesen, H. C. de Graaff, W. J. Kloosterman, and
J. B. Foley, MODELLA—A new physics-based compact model for lateral p-n-p transistors,
IEEE Trans. Elec. Dev., vol. 39, pp. 2553–2561, 1992.
[17] A. van der Ziel and D. Agouridis, The cutoff frequency falloff in uhf transistors
at high currents, Proc. IEEE, vol. 54, pp. 411–412, 1966.
[18] C. T. Kirk, A theory of transistor cutoff frequency ( fT ) falloff at high current
densities, IRE trans. electr. dev., vol. ED-9, pp. 164–174, 1962.
[19] G. M. Kull, L. W. Nagel, S. Lee, P. Lloyd, E. J. Prendergast, and H. Dirks, A
unified circuit model for bipolar transistors including quasi-saturation effects, IEEE
Trans. Elec. Dev., vol. ED-32, no. 6, pp. 1103–1113, 1985.
[20] R. Beaufoy and J. J. Sparkes, The junction transistor as a charge-controlled
device, ATE Journal, vol. 13, pp. 310–324, 1957.
[21] H. Kroemer, Two integral relations pertaining to the electron transport
through a bipolar transistor with a non-uniform energy gap in the base region,
Solid-State Elec., vol. 28, pp. 1101–1103, 1985.
[22] J. R. A. Beale and J. A. G. Slatter, Equivalent circuit of a transistor with a
lightly doped collector operating in saturation, Solid-State Elec., vol. 11, pp. 241–
252, 1968.
[23] M. Schr¨oter and T.-Y. Lee, Physics-based minority charge and transit time
modeling for bipolar transistors, IEEE Trans. Elec. Dev., vol. ED-46, pp. 288–300,
1999.
[24] J. R. Hauser, The effects of distributed base potential on emitter-current injection
density and effective base resistance for stripe transistor geometries, IEEE
Trans. Elec. Dev., vol. May, pp. 238–242, 1964.
[25] H. Groendijk, Modeling base crowding in a bipolar transistor, IEEE Trans.
Elec. Dev., vol. ED-20, pp. 329–330, 1973.
[26] J. A. Pals, On the noise of a transistor with d.c. current crowding, Philips. Res.
Repts, vol. 26, pp. 91–102, 1971.
[27] J. C. J. Paasschens, Compact modeling of the noise of a bipolar transistor
under DC and AC current crowding conditions, IEEE Trans. Elec. Dev., vol. 51, pp.
1483–1495, 2004.
[28] A. G. Chynoweth, Ionization rates for electrons and holes in silicon, Physical
Review, vol. 109, pp. 1537–1540, 1958.
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362
[29] H. C. de Graaff and W. J. Kloosterman, New formulation of the current and
charge relations in bipolar transistor modeling for CACD purposes, IEEE Trans.
Elec. Dev., vol. ED-32, p. 2415, 1985.
[30] H. C. de Graaff, W. J. Kloosterman, J. A. M. Geelen, and M. C. A. M. Koolen,
Experience with the new compact Mextram model for bipolar transistors, in Proc. of
the Bipolar Circuits and Technology Meeting, pp. 246– 249, 1989.
[31] M. P. J. G. Versleijen, Distributed high frequency effects in bipolar transistors,
in Proc. of the Bipolar Circuits and Technology Meeting, pp. 85–88, 1991.
[32] H. C. de Graaff and W. J. Kloosterman, Modeling of the collector epilayer of a
bipolar transistor in the Mextram model, IEEE Trans. Elec. Dev., vol. ED-42, pp.
274–282, Feb. 1995.
[33] L. C. N. de Vreede, H. C. de Graaff, K. Mouthaan, M. de Kok, J. L. Tauritz,
and R. G. F. Baets, Advanced modeling of distortion effects in bipolar transistors
using the Mextram model, IEEE J. of Solid-State Circuits, vol. 31, pp. 114–121, Jan.
1996.
[34] L. C. N. de Vreede, H. C. de Graaff, J. L. Tauritz, and R. G. F. Baets, Extension
of the collector charge description for compact bipolar epilayermodels, IEEE Trans.
Elec. Dev., vol. ED-42, pp. 277–285, 1998.
[35] J. C. J. Paasschens, W. J. Kloosterman, R. J. Havens, and H. C. de Graaff,
Improved modeling of ouput conductance and cut-off frequency of bipolar transistors,
in Proc. of the Bipolar Circuits and Technology Meeting, pp. 62– 65, 2000.
[36] J. C. J. Paasschens, W. J. Kloosterman, R. J. Havens, and H. C. de Graaff,
Improved compact modeling of ouput conductance and cutoff frequency of bipolar
transistors, IEEE J. of Solid-State Circuits, vol. 36, pp. 1390–1398, 2001.
[37] J. C. J. Paasschens, W. J. Kloosterman, and R. J. Havens, Modelling two SiGe
HBT specific features for circuit simulation, in Proc. of the Bipolar Circuits and
Technology Meeting, pp. 38–41, 2001.
[38] W. J. Kloosterman and H. C. de Graaff, Avalanche multiplication in a compact
bipolar transistor model for circuit simulation, IEEE Trans. Elec. Dev., vol. ED-36,
pp. 1376–1380, 1989.
[39] W. J. Kloosterman, J. C. J. Paasschens, and R. J. Havens, A comprehensive
bipolar avalanche multiplication compact model for circuit simulation, in Proc. of
the Bipolar Circuits and Technology Meeting, pp. 172–175, 2000.
[40] J. C. J. Paasschens, R. J. Havens, and L. F. Tiemeijer, Modelling the correla-
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March 2006 Bibliography
tion in the high-frequency noise of (heterojunction) bipolar transistors using chargepartitioning,”
in Proc. of the Bipolar Circuits and Technology Meeting, pp. 221–224,
2003.
[41] J. C. J. Paasschens and R. de Kort, Modelling the excess noise due to avalanche
multiplication in (heterojunction) bipolar transistors, in Proc. of the Bipolar
Circuits and Technology Meeting, pp. 108–111, 2004.
[42] J. C. J. Paasschens, S. Harmsma, and R. van der Toorn, Dependence of thermal
resistance on ambient and actual temperature, in Proc. of the Bipolar Circuits and
Technology Meeting, pp. 96–99, 2004.
[43] F. O’Hara, Physically based compact modelling of lateral pnp transistors,
Unclassified Report 2001/804, Philips Nat.Lab., 2001. Original report is from 1990.
[44] H. C. de Graaff and W. J. Kloosterman, The Mextram bipolar transistor model,
level 503.2, Unclassified Report 006/94, Philips Nat.Lab., June 1995. See Ref. [54].
[45] W. J. Kloosterman and J. A. M. Geelen, Parameter extraction methodology for
the Mextram bipolar transistor model, Unclassified Report 003/96, Philips Nat.Lab.,
1996. See Ref. [54].
[46] W. J. Kloosterman, High frequency validation of the Mextram bipolar transistor
model at small collector-emitter voltages, Report 6966, Philips Nat.Lab., 1996.
[47] W. J. Kloosterman, The base resistance in the QUBiC2, OBIC100 and
BIMOS3 process, Report 6997, Philips Nat.Lab., 1997.
[48] W. J. Kloosterman, The geometric scaling of the Mextram parameters in the
QUBiC3 process, Report 7021, Philips Nat.Lab., 1998.
[49] W. J. Kloosterman, Comparison of Mextram and the Vbic95 bipolar transistor
model, Unclassified Report 034/96, Philips Nat.Lab., 1996. See Ref. [54].
[50] J. C. J. Paasschens and W. J. Kloosterman, Derivation of the model equations
of Mextram, level 503, Unclassified Report NL-UR 2002/808, Philips Nat.Lab.,
2002. See Ref. [54].
[51] J. C. J. Paasschens and W. J. Kloosterman, The Mextram bipolar transistor
model, level 504, Unclassified Report NL-UR 2000/811, Philips Nat.Lab., 2000. See
Ref. [54].
[52] J. C. J. Paasschens, W. J. Kloosterman, and R. J. Havens, Parameter extraction
for the bipolar transistor model Mextram, level 504, Unclassified Report NL-UR
2001/801, Philips Nat.Lab., 2001. See Ref. [54].
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[53] J. C. J. Paasschens,W. J. Kloosterman, and R. van der Toorn, Model derivation
of Mextram 504. The physics behind the model, Unclassified Report NL-UR
2002/806, Philips Nat.Lab., 2002. See Ref. [54].
[54] For the most recent model descriptions, source code, and documentation, see
the web-site http://www.semiconductors.philips.com/Philips Models.
[55] V. Palankovski, R. Schultheis, and S. Selberherr, Simulation of power heterojunction
bipolar transistor on gallium arsenide, IEEE Trans. Elec. Dev., vol 48,
pp.1264-1269, 2001. Note: the paper uses α = 1.65 for Si, but α = 1.3 gives a better
fit; also κ300 for GaAs is closer to 40 than to the published value of 46 (Palankovski,
personal communication).
[56] Pstar User Manual.
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March 2006 Bibliography
Bibliography for Modelbooks
Books [1, 2, 3, 4, 5, 6, 7, 8, 9]
Diode [10]
Basic articles [11, 12, 13, 14]
LPNP [15, 16]
Epilayer model [17, 18, 19]
Charge modelling [20, 21, 22, 23]
Current crowding [24, 25, 26, 27]
Avalanche [28]
Mextram articles [29, 30, 31, 32] [33, 34] [35, 36, 37] [38, 39] [40, 41, 42]
LPNP reports [43]
Mextram reports [44, 45, 46, 47] [48, 49, 50] [51, 52, 53]
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