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B. Murienne - Master Project Thesis - Infoscience - EPFL

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Figure 4. Photolithography process [51].<br />

The substrate, for example a silicon wafer, is coated with a photoresist and exposed to a light<br />

source through a mask. The mask defines the micropatterns by only allowing only some parts of<br />

the photoresist to be exposed to the light source. The photoresist is a light-sensitive material<br />

which can be positive or negative and changes its properties depending on its exposure to light.<br />

During the development, either the exposed or unexposed parts of the resist are removed. For a<br />

positive resist, the developer removes the parts of the resist exposed to light, whereas for a<br />

negative resist, only the exposed parts stay. Other processes such as etching and lift-off can also<br />

be used after photolithography to create different structures. Etching is the process of transferring<br />

a pattern from the photoresist to the layer below it, whereas lift-off transfers the photoresist<br />

pattern to the layer above it [51]. Using different masks and techniques, several patterns can be<br />

combined on a single object to create a more complex structure.<br />

2.3 Stretch devices<br />

Stretch devices are designed to stretch cells that have been previously cultured on elastic<br />

membranes as monolayers. Each device consists of three concentric cylinders: an indenter ring, a<br />

membrane holder with an O-ring and a screw-top as shown on Figure 5 (a,c). There exists two<br />

different types of stretch devices, circular stretchers which induce isotropic stretch and elliptical<br />

stretchers which induce anisotropic stretch as represented on Figure 5 (b,d). The elastic<br />

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