B. Murienne - Master Project Thesis - Infoscience - EPFL
B. Murienne - Master Project Thesis - Infoscience - EPFL
B. Murienne - Master Project Thesis - Infoscience - EPFL
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Figure 4. Photolithography process [51].<br />
The substrate, for example a silicon wafer, is coated with a photoresist and exposed to a light<br />
source through a mask. The mask defines the micropatterns by only allowing only some parts of<br />
the photoresist to be exposed to the light source. The photoresist is a light-sensitive material<br />
which can be positive or negative and changes its properties depending on its exposure to light.<br />
During the development, either the exposed or unexposed parts of the resist are removed. For a<br />
positive resist, the developer removes the parts of the resist exposed to light, whereas for a<br />
negative resist, only the exposed parts stay. Other processes such as etching and lift-off can also<br />
be used after photolithography to create different structures. Etching is the process of transferring<br />
a pattern from the photoresist to the layer below it, whereas lift-off transfers the photoresist<br />
pattern to the layer above it [51]. Using different masks and techniques, several patterns can be<br />
combined on a single object to create a more complex structure.<br />
2.3 Stretch devices<br />
Stretch devices are designed to stretch cells that have been previously cultured on elastic<br />
membranes as monolayers. Each device consists of three concentric cylinders: an indenter ring, a<br />
membrane holder with an O-ring and a screw-top as shown on Figure 5 (a,c). There exists two<br />
different types of stretch devices, circular stretchers which induce isotropic stretch and elliptical<br />
stretchers which induce anisotropic stretch as represented on Figure 5 (b,d). The elastic<br />
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