english - Department of Chemistry-Colorado State University

Personal Details
Curriculum Vitae
Name: Dr. Ing. Bengt C. Jaeckel
Date of birth: July, 24 th 1976
Place of birth: Darmstadt, Germany
Citizenship: German
marital status: Not married
Address: 500 W Prospect Rd. Apt #5E
Fort Collins
Colorado - 80526 USA
Telephone: 001-970-492-9024
001-970-491-3886
E-Mail: bjaeckel@gmail.com
Skype: bjaeckel
Scientific Career
Since 08/05 Post doctoral fellow in the Chemistry Department at Colorado
State University, Fort Collins, Colorado/USA
Research topic: Preparation and characterization of
metal/orgainc interfaces with surface sensitive techniques.
Advisor: Dr. B. A. Parkinson
01/02-07/05 Ph.D student in the surface science department at the Darmstadt
University of Technology
Thesis Title:”Herstellung, Charakterisierung und Strukturierung
epitaktischer Schichtgitterverbindungen”
Advisor: Prof. Dr. Jaegermann
05/01-10/01 Diploma student in the surface science department at the
Darmstadt University of Technology
Thesis Title:”Photo-elektronen-emissions-mikroskopie
(PEEM) an Halbleitergrenzflächen”
Advisor: Prof. Dr. Jaegermann
Dr. Ing. Bengt Jaeckel
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Professional Career and Teaching Experience
Since 08/05 Research and teaching assistant in the Chemistry department,
Colorado State University (Fort Collins/Colorado/USA)
01/02-07/05 Research and teaching assistant at the Surface Science Division
in the department of Materials Science, Darmstadt University
of Technology
Co-Advisor of tree diploma theses
11/96 - 12/03 night watch and technical assistant in a sleep laboratory
Education
11/05 PhD. in Materials-Science (grade: very good*)
10/01 Diploma in Materials-Science (grade: very good)
10/98 Pre-Diploma in Materials-Science (grade: very good)
10/96 - 5/01 Study of Materials-Science at the Darmstadt University of
Technology
10/95 - 10/96 alternative civilian service in the sleep laboratory at the
”Desaga-Klinik” in Lindenfels
07/95 Abitur
1986-1995 Gymnasium (high school): Martin Luther school in Rimbach
1982-1996 Elementary school: Carl Orff school in Lindenfels
Other skills, activities and intrests
Languages german, english and basic french
Computer Mac Os X, Windows 9x, 2k and XP (Workstation and Server)
Software Office-Programs: L ATEX, iLife, MS-Office, Endnote
Data-processing: Wavemetrics Igor Pro, Excel, Corel Draw,
Paint Shop Pro
Internet/Server: FTP, Dreamweaver (coding), Chat-progs.
(Skype)
Hobbies MTB-racing with several victories
2006: Two victories in the Winterpark Epic MTB-series (Expert
category)
2005: 2. Place 12 hour relay MTB race Külsheim 2005
2004: 1. Place University Champion ships road racing
2002: 2 stage victories at the ”Deutschland Tour”
Collector Vehicles: my VW-181 (The Thing)
Dr. Ing. Bengt Jaeckel
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Fort Collins February 15, 2007
Dr. Ing. Bengt Jaeckel
signature
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Publications
[9] J. B. Park, B. Jaeckel, B. A. Parkinson
”Fabrication and investigation of nanostructures on transition metal
dichalcogenide surfaces using a scanning tunneling microscope”, Langmuir
22, 5334 (2006)
[8] Y. Lu, B. Jaeckel, B. A. Parkinson
”Preparation and characterization of terraced surfaces of low-index faces
of anatase, rutile, and brookite”, Langmuir 22, 4472 (2006)
[7] R. Hunger, R. Fritsche, B. Jaeckel, W. Jaegermann, L. J. Webb, N. S.
Lewis
”Chemical and electronic characterization of methyl-terminated Si(111)
surfaces by high-resolution synchrotron photoelectron spectroscopy”,
Physical Review B 72, 045317 (2005)
[6] R. Rudolph, C. Pettenkofer, J. A. Adams, F. Ohuchi, M. Olmstead, B.
Jaeckel, A. Klein and W. Jaegermann
”Electronic structure of the Si(111):GaSe van der Waals-like surface termination”,
New Journal of Physics, 7, 108 (2005)
[5] B.Jaeckel, Y.Gassenbauer, Y.Tomm and W. Jaegermann
”AFM tip induced formation of nanometer scale structures on WSe2 under
defined conditions”, Surface Science 597, 65 (2005)
[4] T. Schulmeyer, R. Hunger, R. Fritsche, B. Jackel, W. Jaegermann, A.
Klein, R. Kniese, M. Powalla
”Interfaces of chalcogenide solar cells: a study of the composition at the
Cu(In,Ga) Se2/CdS contact”, Thin Solid Films 480 110 (2005)
[3] B.Jaeckel, R. Fritsche, A. Klein and W. Jaegermann
”II-VI-Semiconductors onto Si(111)-surfaces - ZnS onto bare and GaSe
terminated surfaces”, AIP Conference Proceedings ICPS-2004 722, 153
(2005)
[2] R. Fritsche, B.Jaeckel, A. Klein and W. Jaegermann
”High-resolution photoemission study of the Si(111)/Au interface and
its modification by a GaSe van der Waals termination layer”, Applied
Surface science, 234, 321 (2004)
[1] O.A. Balitskii, V.P. Savchyn, B. Jaeckel and W. Jaegermann
”Surface characterization of In4Se3 single crystal”, Physica E: Lowdimensional
Systems and Nanostructures 22, 921 (2004)
Dr. Ing. Bengt Jaeckel
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Talks and Conference Contributions
03/07 DPG-Frühjahrstagung des Arbeitskreises Festkörperphysik, Regensburg
”Surface and Interface Properties of Chrysene on inert Substrates”
”BINAP’s on Au(111) - Electronic interface properties”
09/06 ACS-meeting, San Francisco/California/USA
”Investigation of 2D and 3D Chirality at (organic-) Molecule/metal interfaces”
05/06 209th ECS Meeting, Denver/Colorado/USA
” Influence of Interface Dipole Potentials on the Growth-morphologhy at
organic/ metal and organic/semiconducting interface”
03/05 DPG-Frühjahrstagung des Arbeitskreises Festkörperphysik, Berlin
”Facet and layer formation of II-VI-semiconductors on GaSe van der
Waals terminated Si(111)”
”A simple model system for silicon/organic interfaces: Si(111)-CH3”
07/04 27th International Conference on the Physics of Semiconductors,
Flagstaff/Arizona/USA
”II-VI-Semiconductors onto Si(111)-surfaces - ZnS onto bare and GaSe
terminated surfaces”
03/04 DPG-Frühjahrstagung des Arbeitskreises Festkörperphysik, Regensburg
”Growth of a GaSe half-sheet on Si(111)”
”Influence of selenium and steps on the Si(111)-(1x1)”
09/03 ICFSI-9: The 9th International Conference on the Formation of Semiconductor
Interfaces, Madrid/Spain
”Investigations of GaSe half-sheet terminated Si(111) surfaces with scanning
probe techniques”
03/03 DPG-Frühjahrstagung des Arbeitskreises Festkörperphysik, Dresden
Oberflächen- und Grenzflächeneigenschaften von GaSe terminiertem
Si(111)”
02/03 DFG Schwerpunktprogramm: Grundlagen der elektrochemischen Nanotechnologie
Workshop: ”Halbleiter-Elektrochemie”, Jugendheim
”Preparation and nanostructuring of semiconductors van der Waals epitaxy
layers”
Dr. Ing. Bengt Jaeckel
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